CN1195962A - Assembly and method of assembly - Google Patents
Assembly and method of assembly Download PDFInfo
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- CN1195962A CN1195962A CN97108720A CN97108720A CN1195962A CN 1195962 A CN1195962 A CN 1195962A CN 97108720 A CN97108720 A CN 97108720A CN 97108720 A CN97108720 A CN 97108720A CN 1195962 A CN1195962 A CN 1195962A
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- substrate
- pore
- assembling
- attachment seat
- epoxy resin
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- 238000000034 method Methods 0.000 title claims description 25
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 239000004593 Epoxy Substances 0.000 claims abstract description 10
- 239000011148 porous material Substances 0.000 claims description 79
- 239000003822 epoxy resin Substances 0.000 claims description 57
- 229920000647 polyepoxide Polymers 0.000 claims description 57
- 238000005538 encapsulation Methods 0.000 claims description 26
- 239000007788 liquid Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000009434 installation Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 238000009826 distribution Methods 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83102—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus using surface energy, e.g. capillary forces
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- H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Structure Of Printed Boards (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
A substrate having vent holes is used to encapsulate an electrical component package. The vent holes extend through the substrate and are centrally positioned below the package. The substrate includes a plurality of pads that mate with corresponding contacts carried on the component package. Once mated, an application of epoxy completely around the component package is made. Upon heating, the epoxy flows into a gap between the component package and the substrate. The vent holes exhaust air from the gap and allow the epoxy to quickly and completely fill the gap, thereby encapsulating the component package.
Description
The present invention relates generally to substrate, and more specifically, relate to the substrate that is suitable for encapsulating the electric element of installing thereon.
The electricity element as direct chip attach (DCA) assembly, is widely accepted in whole electronics industry.The DCA assembly comprises the electronic contact group that is stated from the surface thereof.The contact is arranged to array or other pattern, and mainly comprises solder bump.Assembly directly is assembled into substrate, as printed circuit board (PCB).Substrate comprises the dish group that is loaded with.The dish group is arranged on the substrate and matches with the contact.Assembling is realized to the dish of substrate in contact by weld assembly.Seam between projection and dish generation component and the substrate.
For strengthening intensity and reliability, the assembling of assembly and substrate is finished by encapsulation.Encapsulation comprises the seam between fill assembly and the substrate.Encapsulation is twice process.In the first time, distribute the epoxy resin pearl along two adjacent edges of assembly, assembling is heated with fusing epoxy resin, and causes capillary flow, and assembling needs through latent period, and during this cycle, the epoxy resin of fusing flows into the seam under capillarity.At the terminal point of latent period, assembling must be through the second time along other two adjacent edges distribution epoxy resin.Unfortunately, twice process need increases cycle time, duplex equipment, is used for the control of online manufacturing and high-caliber procedure quality.For example, if the stand-by period deficiency between twice, bubble can be sealed under the assembly, causes the too early serious mechanical failure of incomplete encapsulation and assembling.
The purpose of this invention is to provide the method for assembling and assembling, be used for assembling by process package parts assembly and substrate.
The invention provides a kind of assembling, comprising:
Substrate has first and second;
Attachment seat is stated from described first;
Element has interface, to cooperate with described attachment seat;
The epoxy resin of scheduled volume encapsulates described element; With
The pore group is applied between first and second of described substrate, and described pore group is located near the center of the described attachment seat under the described element, arranges described pore group to allow fast and fully by the described element of epoxy encapsulation.
The invention provides a kind of method of assembling, comprise step:
Provide the substrate of attachment seat and pore group, described pore group is arranged near the center of described attachment seat, and runs through described substrate;
By the interface and the described attachment seat of component assembly, attached described element is to described substrate, and described element and described substrate are separated by described interface and described attachment seat, to produce seam therebetween;
Encase described element fully with the epoxy resin that is put in contiguous described element on the described substrate; With
Heat described epoxy resin, to form free flowing liquid, wherein, described liquid is pulled into described seam, and described pore group is from described seam exhaust, to guarantee fast, intactly to encapsulate described element.
Substrate with the pore group is used to encapsulate electric element in a process.Pore stretched substrate and was centered close to the attachment seat of substrate.Attachment seat comprise be stated from electric element on the dish group that matches of corresponding contact.The electricity element is surrounded by epoxy resin fully.Based on heating, epoxy resin injects by the contact and coils definite electric element and the seam between substrate.Pore drains the air from seam, and allows epoxy resin to be full of seam quick and completely, therefore package parts assembly in process.
Advantage of the present invention is to finish assembling with a process, and rapidly, reliably.
Accompanying drawing is briefly described
Fig. 1 describes communication system, comprises portable electronic equipment, and its is with the assembling of the encapsulation that includes substrate that pore arranges and electric element;
Fig. 2 is depicted in before the encapsulation of assembling, the perspective view of the assembling of Fig. 1 amplification, that decompose;
The bottom view of the electric element of Fig. 3 depiction 1;
The top view of the amplification that the pore of Fig. 4 depiction 1 is arranged;
Fig. 5 be depicted in before the encapsulation of assembling be connected substrate and electric element before, along the sectional view of the assembling of the Fig. 1 of the line 5-5 among Fig. 2;
The sectional view of Fig. 6 depiction 5, wherein electric element attaches to substrate;
Fig. 7 describes to be applied to the top view of assembling of Fig. 1 of the encapsulating material of electric element;
The sectional view of Fig. 8 depiction 5, wherein assembling is just packed;
The sectional view of Fig. 9 depiction 5, wherein assembling is packed;
The sectional view of Figure 10 depiction 5, wherein another assembling is just packed; With
Figure 11 describes the top view of the substrate of Fig. 1 that another pore arranges.
Fig. 1 describes communication system 100, comprises electronic installation 101 and base station 102.Electronic installation 101 is communicated by letter with base station 102 by radio frequency (RF) signal 103.The electronic installation 101 that is shown portable cellular phone comprises antenna 104 (visual by tangent line 105) and substrate assembling 106 (visual by tangent line 107).When electronic installation 101 was in operation, the signal of taking from the RF signal 103 that receives at antenna 104 was handled in substrate assembling 106, and produced the signal that will deliver to antenna 104 and launch as RF signal 103.Substrate assembling 106 comprises electric element 108 and substrate 110.Assembly 108 is attached to the bottom surface 111 of substrate 110 (visual by tangent line 109), and by epoxy resin 112 encapsulation.The footprint 114 of assembly 108 is drawn in dotted line on the end face 113 of substrate 110.Substrate 110 comprises the pore arrangement 116 that is centered close in the footprint 114.During making substrate assembling 106, pore is arranged the encapsulation of 116 help assemblies 108.
With reference to Fig. 2, substrate 110 preferred printed circuit board (PCB)s (PCB), it is by polyimides, epoxy resin-matrix fire prevention industrial fiber glass (G10-FR4), or other suitable material constitutes.The surface 111 of substrate 110 comprises attachment seat 201, is used for installation component 108.Attachment seat 201 comprises 202 groups on dish, is stated from the surface 111 of substrate 110.Fashionable when 201 pairs of the attachment seat of Fig. 2 of the interface 302 of assembly 108 and substrate 110, coil 202 groups and be arranged with under the 304 groups of corresponding contacts, contact that are positioned at Fig. 3.The outer disk that coils 202 groups is arranged to determine periphery, and it is a rectangle in the embodiment that illustrates, about 7.5mm * 5mm.The remaining dish that coils 202 groups is positioned at periphery.Each dish that coils 202 groups is electrically connected to the metal line that is arranged in the substrate 110, as copper cash 204.The metal line conducting electrical signals to and from coiling 202 groups, so that handle.
In the embodiment of describing, attachment seat 201 is compatible mutually with DCA assembly such as assembly 108.As shown in Figure 5, coil each dish of 202 groups and comprise flat meltable protruding 500 and contact 502.Contact 502 is stated from the recess 504 of substrate 110, as scolder screen opening.Preferably electroplate with corronil, aluminium or other material that is suitable for being welded to connect contact 502.Flat projection 500 is connected to contact 502, and is arranged in the recess 504 around contact 502 by reflux heating and graduation (flattening) process.Flat projection 500 preferably is made of plumber's solder, as comprises the scolder of 60% tin and 40% lead, or molten point is lower than other suitable scolder (seeing Fig. 3) of fusing point of projection 308 of 304 groups of the contacts of assembly 108.
With reference to Fig. 2, pore is arranged 116 centers 206 near attachment seat 201.Center 206 is positioned at the transverse axis of attachment seat 201 and the intersection point of the longitudinal axis 208 and 210.In the embodiment in being shown in Fig. 2,4,5,6,8 and 9, pore is arranged 116 and is comprised three cylinder pores 212,213 and 214, and they are applied between the surface 111 and 113 of substrate 110.Pore 212,213 and 214 size must allow air to pass through, but prevent that epoxy resin from running away.In the embodiment of describing, pore 212,213 and 214 can have similar size, and has diameter D to arrive about 0.4mm for about 0.3mm, as shown in Figure 4.Arrange pore 212,213 and 214, so that their separately central shafts 415,416 and 417 equidistant, and define the summit of equilateral triangle 418, shown in Fig. 4 dotted line with center 206.Pore 212,213 and 214 each must be enough near center 206, to guarantee epoxy encapsulation completely and to prevent space in the epoxy resin.In the embodiment of describing, the 206 distance D co to axle 415,416 and 417 are 0.6mm approximately from the center, and the distance D oo between the axle 415,416 and 417 is 0.9mm approximately.
At first, join by placing modules 108 and substrate 110, so that each contact of 304 groups of contacts is seated on the respective disc of 202 groups on dish, assembly 108 is installed to substrate 110, as shown in Figure 5.Assembly 108 and substrate 110 are then by about 60 to 90 seconds of the heating that refluxes, about 220 degrees centigrade of peak temperature.Each dish that this heat fused dish is 202 groups flat protruding 500, and the projection 308 of each contact of 304 groups of the contacts of insoluble assembly 108.The scolder of the fusing of flat projection 500 is dragged under surface tension on the projection 308 of each contact of 304 groups of contacts.Based on cooling, the flat projection 500 of coiling each dish of 202 groups is converted into the solder bump 600 of concave, as shown in Figure 6.The solder bump 600 of concave that coils each dish of 202 groups is fused into the projection 308 of each contact of 304 groups of contacts, forms to connect its machinery and electrical connection module 108 and substrate 110 in metallurgical.Final assembling 602 comprises the assembly 108 that is installed on the substrate 110, have in the face of and be parallel to attachment seat 201 interface 302 but by 304 groups of contacts and 202 groups of spaces of dish separately, to be created in the seam 604 of about 0.07mm to the scope of 0.13mm.At the embodiment centre joint of describing 604 is 0.08mm approximately.
The different materials of forming assembly 108 and substrate 110 respectively, when temperature rose, they were tending towards expanding but expand with different ratios.The difference of thermal expansion causes the stress of 202 groups of scolders with 304 groups of contacts of dish in being connected, the inefficacy of connection in it finally can cause.For strengthening interior connection, people know that being full of seam 604 encapsulation with epoxy resin assembles 602.Encapsulate reliably and the inefficacy that connects in minimizing for making, epoxy resin must be full of seam 604 void-free and fully.
As in background technology, discussing, as the encapsulation of the assembly of DCA assembly, finished by twice process in the past, wherein, comprise step: distribute, heating and waiting at every turn.Twice process increased the manufacturing cycle time of using the device of assembly.For example, in the manufacturing cycle time of the device of using assembly, increase about 90 seconds by twice process encapsulation 7.5mm * 5mm DCA assembly.
The encapsulation of assembling 602 is by only comprising that single step distributes, a process of heating is carried out.The same epoxy resin pearl 112 of dispensing tool 700 continuous dispensing of Fig. 7 prevents to overflow zone 702 to substrate 110.The dispensing tool 700 that can be automatic distributor is calibrated so that distribute the amount of epoxy resin 112 to be enough to package assembling 108.The amount of epoxy resin 112 depends on the size of seam 604.In the embodiment of describing, dispensing tool 700 distributes about 15mg epoxy resin 112, and it is single part epoxy, as by the Dexter-Hysol manufacturing and betray, part number is the epoxy resin of FP 4510, or other suitable heat cured polymer.Prevent to overflow no electric parts in the zone 702, and be adjacent to and surround fully attachment seat 201.The size that prevents to overflow zone 702 is suitable for accepting the amount of the required epoxy resin 112 of package assembling 108.In the embodiment of describing, prevent to overflow zone 702, the width W of the 1.3mm that has an appointment.
After epoxy resin 112 was assigned with, assembling 602 was heated to about 80 ° of C.During heating, the viscosity of epoxy resin 112 reduces, and epoxy resin 112 becomes free fluid, and it pulls seam 604 from all limits of assembly 108 into by capillarity, describes as the arrow 800 of Fig. 8.Along with epoxy resin 112 flows into, the air in the seam 604 and other gas are arranged 116 by pore and are discharged simultaneously, describe as arrow 802.The scavenging action of pore arrangement 116 reduces the resistance of the capillary flow of epoxy resin 112, and prevents that folder is for air and other gas in epoxy resin 112.As previously mentioned, pore 212,213 and 214 forms and prevents the size that epoxy resin 112 passes through.When epoxy resin 112 is full of seam 604 the time fully, encapsulation is done, as shown in Figure 9.In the embodiment of describing, primary distribution and heating process only increase the about 30 seconds manufacturing cycle times to the device 101 of Fig. 1.Like this, finish in 1/3 of the required time of twice process that is encapsulated in by a process.
As described, reliable for making encapsulation, seam 604 must be full of by epoxy resin 112 fully, as shown in Figure 9.For guaranteeing to be full of fully, pore arrangement 116 is necessary with an above pore.It is bad that pore is arranged pore of 116 usefulness.During the encapsulation, when epoxy resin inwardly flows, appear at the scolder screen of the outside in the seam or the front end that epoxy resin 112 was picked up and be stated to other exotic physical efficiency.If this material arrived pore and arranges 116 before epoxy resin 112 is full of seam, can block one or more pores, and stop ventilation.In arranging with the pore of single pore, this obstruction can cause incomplete filling.
Further, in single pore was arranged, epoxy resin 112 itself can cause the incomplete filling of seam 604.During the encapsulation, epoxy resin 112 flows into different rates from every limit of attachment seat, and can not cover the center 206 in attachment seat 201 simultaneously.In the arrangement that just in time is arranged in the center of attachment seat with single pore, single pore can epoxy resin 112 cover with complete filling seam before blocked by epoxy resin.In case epoxy resin 112 is filled pore, air or other gas can not be run out of.When its adjacent side of encapsulation had the rectangular assembly of different apothems, as the assembly in the embodiment of describing 108, it was bad that single pore is arranged, and this is that this reason is blocked by epoxy resin because it is easy to.
After the encapsulation, epoxy resin 112 arrives about 1800 seconds period treatment of about 150 ° of C by heating assembling 602.Handling cured epoxy resin 112 is epoxy resin projection 900, is shown among Fig. 9.Epoxy resin projection 900 only extends under the top margin of assembly 108, and from assembly 108 outreach D
fIn the embodiment of describing, distance D
fBe 1.3mm approximately.Final structure is the substrate assembling 106 that is applicable to Fig. 1 of device 101.
In another embodiment, as shown in figure 10, can encapsulate " back-to-back " (back to back) assembly with a process.Assembly process, substrate 110 is inverted, and second assembly 1000 is installed to direct surface 113 with respect to assembly 108.The same quadrat method that second assembly 1000 is described with aforementioned reference group part 108 is installed to substrate 110, to form assembling 1002.Second seam 1004 occupy between 113 and second assembly 1000 of surface.Epoxy resin 112 ring assemblies 108 distribute on the surface 111 of substrate 110, and the amount of distribution is enough to package assembling 108 and 1000.In the embodiment of describing, distribute the epoxy resin 112 of about 30mg, with encapsulation assembling 1002 to about 40mg.Based on heating, capillarity shackle epoxy resins 112 is gone into seam 604, arranges 116 by the pore in the substrate 110 downwards, and enters second seam 1004, shown in arrow 1006.Capillarity driving ring epoxy resins 112 is outside along surface 113 from pore arrangement 116, to fill second seam 1004.Surface tension is upwards dragged the epoxy resin on the limit of second assembly 1000, forms the epoxy resin projection of wishing when handling.For guaranteeing passing through of epoxy resin 112, pore is arranged 116 usefulness pores 1012,1013 and 1014 (wherein, pore 1013 and 1014 only being shown), and their diameter is greater than the pore 213~215 of Fig. 4.In the embodiment that Figure 10 describes, each of pore 1012~1014 diameter of 0.6mm of having an appointment to 0.8mm.
As previously mentioned, pore arrangement 116 is necessary with an above pore.Another embodiment of pore arrangement 1100 is shown among Figure 11.Another pore is arranged 1100 centers 206 near attachment seat 201.Another pore is arranged five pores of 1100 usefulness 1101,1102,1103,1104 and 1105, and they run through substrate 110.Pore 1101~1105 must be allow air by but prevent the size that epoxy resin passes through.In the embodiment of describing, each of pore 1101~1105 diameter D ' of 0.3mm that have an appointment to 0.4mm.Arrange pore 1101~1105, so that the central shaft of pore 1101 is positioned at the center 206 of attachment seat 201, and pore 1102,1103,1104 and 1105 central shaft 1107,1108,1109 separately and the angle of 1110 formation rectangles 1112, show as in the dotted line.Each of pore 1102~1105 must close enough center 206, to guarantee completely epoxy encapsulation and to prevent the space.In the embodiment of describing, from the center 206 distance D co ' to axle 1107~1110 be approximately 0.7mm to about 0.9mm, and the distance D oo ' of axle between 1102~1105 is that 1.0mm arrives about 1.3mm approximately.
Therefore can know, can be as the assembly of DCA assembly by a process epoxy encapsulation.The two or more pores that run through the substrate under the assembly center allow the seam between quick complete fill assembly of epoxy resin and the substrate.Be used for cellular manufacturing though be depicted as, person of skill in the art will appreciate that, encapsulation process can be used to reduce the manufacturing cycle time of the device of the one or more package assemblings of any usefulness.This device includes, but not limited to pocket computer, camcorders, cordless telephone, two-way radio, individual digit aid, and similar device.
Claims (10)
1. assembling comprises:
Substrate has first and second;
Attachment seat is stated from described first;
Element has interface, to cooperate with described attachment seat;
The epoxy resin of scheduled volume encapsulates described element; With
The pore group is applied between first and second of described substrate, and described pore group is located near the center of the described attachment seat under the described element, arranges described pore group to allow fast and fully by the described element of epoxy encapsulation.
2. assembling as claimed in claim 1, wherein said interface comprises contact sets, and wherein there is predetermined length the contact, and described attachment seat comprises the dish group, described contact sets and dish group are created in the seam between described element and the described substrate, and described seam is not more than about 1.3mm.
3. assembling as claimed in claim 1, wherein, each of described pore group and the center of described attachment seat are equidistant.
4. assembling as claimed in claim 1, wherein, described pore group is arranged to equilateral triangle, and each of described pore group is positioned at a summit of described equilateral triangle.
5. assembling as claimed in claim 4, wherein, the distance between the central shaft between each of described pore group is not more than about 0.9mm.
6. assembling as claimed in claim 1, wherein, each of described pore group has the diameter that is not less than about 0.3mm and is not more than about 0.4mm.
7. assembling as claimed in claim 1, wherein, described pore group comprises five pores, one of described five pores are positioned at the center of described attachment seat, other pore of described five pores is arranged to rectangle, each of other pore of described five pores is positioned at described rectangular one jiao, and equidistant substantially with one of described five pores.
8. assembling as claimed in claim 1, wherein, the distance from the center of described attachment seat to the central shaft of other pore of described five pores is not more than about 0.9mm.
9. assembling as claimed in claim 1 also comprises:
Second element is attached to directly the second surface with respect to the described substrate of described element;
The epoxy resin of second scheduled volume encapsulates described second element; With
Wherein, the size of described pore group allows epoxy resin to pass through.
10. Zu Zhuan method comprises step:
Provide the substrate of attachment seat and pore group, described pore group is arranged near the center of described attachment seat, and runs through described substrate;
By the interface and the described attachment seat of component assembly, attached described element is to described substrate, and described element and described substrate are separated by described interface and described attachment seat, to produce seam therebetween;
Encase described element fully with the epoxy resin that is put in contiguous described element on the described substrate; With
Heat described epoxy resin, to form free flowing liquid, wherein, described liquid is pulled into described seam, and described pore group is from described seam exhaust, to guarantee fast, intactly to encapsulate described element.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US77128696A | 1996-12-20 | 1996-12-20 | |
US771,286 | 1996-12-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1195962A true CN1195962A (en) | 1998-10-14 |
Family
ID=25091330
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN97108720A Pending CN1195962A (en) | 1996-12-20 | 1997-12-18 | Assembly and method of assembly |
Country Status (7)
Country | Link |
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JP (1) | JPH10190200A (en) |
KR (1) | KR19980064449A (en) |
CN (1) | CN1195962A (en) |
BR (1) | BR9706047A (en) |
FI (1) | FI974564A (en) |
GB (1) | GB2320612A (en) |
SE (1) | SE9704751L (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115377021A (en) * | 2022-08-29 | 2022-11-22 | 北京超材信息科技有限公司 | Electronic device module packaging structure and manufacturing method |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5021349B2 (en) * | 2007-03-27 | 2012-09-05 | 小島プレス工業株式会社 | Circuit board for vehicle-mounted antenna |
GB2504343A (en) * | 2012-07-27 | 2014-01-29 | Ibm | Manufacturing an semiconductor chip underfill using air vent |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4942452A (en) * | 1987-02-25 | 1990-07-17 | Hitachi, Ltd. | Lead frame and semiconductor device |
IT1217802B (en) * | 1988-06-08 | 1990-03-30 | Sgs Thomson Microelectronics | SEMICONDUCTOR DEVICE IN PLASTIC CONTAINER WITH HALF DU ABCIORAGGIO BETWEEN "CHIP" DOOR PLATE AND PLASTIC BODY |
-
1997
- 1997-11-06 GB GB9723413A patent/GB2320612A/en not_active Withdrawn
- 1997-11-28 BR BR9706047A patent/BR9706047A/en not_active IP Right Cessation
- 1997-12-10 JP JP9361917A patent/JPH10190200A/en active Pending
- 1997-12-18 CN CN97108720A patent/CN1195962A/en active Pending
- 1997-12-18 FI FI974564A patent/FI974564A/en unknown
- 1997-12-19 SE SE9704751A patent/SE9704751L/en not_active Application Discontinuation
- 1997-12-20 KR KR1019970071342A patent/KR19980064449A/en active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115377021A (en) * | 2022-08-29 | 2022-11-22 | 北京超材信息科技有限公司 | Electronic device module packaging structure and manufacturing method |
Also Published As
Publication number | Publication date |
---|---|
FI974564A0 (en) | 1997-12-18 |
MX9709039A (en) | 1998-06-28 |
GB2320612A (en) | 1998-06-24 |
BR9706047A (en) | 1999-08-03 |
GB9723413D0 (en) | 1998-01-07 |
JPH10190200A (en) | 1998-07-21 |
SE9704751L (en) | 1998-06-21 |
KR19980064449A (en) | 1998-10-07 |
FI974564A (en) | 1998-06-21 |
SE9704751D0 (en) | 1997-12-19 |
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