CN1195315C - Multiple-layer type dielectric antireflection layer and its forming method - Google Patents
Multiple-layer type dielectric antireflection layer and its forming method Download PDFInfo
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- CN1195315C CN1195315C CNB021074232A CN02107423A CN1195315C CN 1195315 C CN1195315 C CN 1195315C CN B021074232 A CNB021074232 A CN B021074232A CN 02107423 A CN02107423 A CN 02107423A CN 1195315 C CN1195315 C CN 1195315C
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Abstract
The present invention relates to a multilayer type dielectric anti-reflecting layer which is suitable for being arranged between a base material and a photoresist layer. A first dielectric anti-reflecting layer is orderly formed on the base material; subsequently, the first dielectric anti-reflecting layer is processed through special electric slurry step, such as N2O electric slurry strengthening, and a first electric slurry strengthening anti-reflecting layer is formed, wherein the first dielectric anti-reflecting layer and the first electric slurry strengthening anti-reflecting layer can form an anti-reflecting layer combination; subsequently, N layers of the anti-reflecting layer combinations are orderly formed on the first electric slurry strengthening anti-reflecting layer to form the multilayer type dielectric anti-reflecting layer, wherein the N is a natural number and is between 1 and 4.
Description
Technical field
The invention relates to the optical semiconductor carving technology, be particularly to the anti-reflecting layer in the photoetching process, clearer and more definite, relate to a kind of multiple-layer type dielectric antireflection layer and its formation method.
Background technology
Along with the semiconductor element integrated level improves, the linewidth requirements of semiconductor element is more and more littler, and (critical dimension, control CD) is also more and more important for critical dimension.In photoetching process,, therefore when photoresist is covered in wafer surface, can cause the photoresist layer variable thickness along with the planarization characteristics (planarization) of photoresist because there has been the high low head of external form in wafer surface.And when photoetching light is advanced in photoresist, then can form gain/loss interference at the reverberation and the incident light of wafer surface, thereby produce so-called hunt effect (swing effect).Above-mentioned photoresist uneven thickness and hunt effect all can cause the ill effect of cd variations.
Because more and more high reflection substrates, as being extensive use of of silicon substrate or metal substrate, reflection problems at the deep UV (ultraviolet light) wave band all is bigger than visible light wave range, therefore cause photoresist layer generation standing wave effect and notch (notching) effect will be more serious, make the design transfer reliability of lithographic procedures significantly reduce.
For fear of hunt effect, the following two kinds of methods of general normal employing.First kind of mode is that (Bottom Anti-Reflection Coating BARC) realizes by the rotary coating bottom layer anti-reflection layer.Figure 1 shows that the photolithographic structures 1 of existing a kind of bottom layer anti-reflection layer, the existing design that improves hunt effect with the BARC layer is described.Before the general coating photoresist layer 16, be coated with one deck bottom layer anti-reflection layer (BARC) 14 on substrate 10 in spin coating (spin-on) mode earlier, thickness is about 1000-2000 , then is coated with photoresist layer 16 thereon.General bottom layer anti-reflection layer (BARC) the 14 normal organic films that adopt, when projection one photoetching irradiates light 11 was on substrate, the light that the organic principle in the organic film (Organic Dye) can absorptive substrate reflects was to reduce the variation of live width.Yet this kind coating still can as element 12, rise and fall and produce along with the flatness of wafer surface, can't realize the phase deviation (phase shift) of stability.
The second way then is to utilize chemical vapour deposition (CVD) mode (CVD) growth dielectric anti-reflective layer (Dielectric Anti-Reflection Coating DARC) realizes.Figure 2 shows that the photolithographic structures of existing a kind of dielectric anti, the existing design that improves hunt effect with darc layer is described.Mainly be to form the dielectric anti-reflective layer of a thickness about about 300 in chemical vapour deposition (CVD) mode (CVD) earlier on the substrate 20, then forming photoresist layer 26 thereon.This mode is specially adapted in the deep UV (ultraviolet light) photoetching technique.The layout that darc layer is subjected to wafer surface rises and falls, as element 22, influence less, and the main feature of this method is can be by material (Si, O, N or the C) ratio of adjusting darc layer or the technological parameter that changes CVD.As gas flow, pressure etc., then can adjust refractive index (refractive index) n and absorption coefficient (extinction coefficient) the k value of darc layer, realizing good phase deviation, and form the loss interference, eliminate the reverberation of substrate 20.
Yet the n that adjusts above-mentioned darc layer thickness and k value be often along with different technological requirements, and different technical difficulty is arranged.Want along with different technological requirements, the n and the k value of darc layer are adjusted under the optimum condition, the light that substrate is reflected can form good loss interference and be eliminated, and then needs constantly to adjust the various conditions that form darc layer.
Summary of the invention
For the n and the bigger elasticity of k value that adjusts darc layer is provided, dielectric anti-reflective layer that provides a kind of multiple field and forming method thereof is provided one object of the present invention, with the refractive index n of realizing the best and the value of absorption coefficient k.
For achieving the above object, the invention provides a kind of multiple-layer type dielectric antireflection layer, be applicable to that it comprises between a substrate and the photoresist layer: one first dielectric anti-reflective layer is positioned on this substrate; One first plasma foil is positioned on this first dielectric anti-reflective layer; And the anti-reflecting layer of N layer combination, be positioned on this first plasma book film, wherein N is a natural number, between 1-4, and wherein each anti-reflecting layer combination comprises a dielectric anti-reflective layer and and is positioned at plasma foil on this dielectric anti-reflective layer.
Described multiple-layer type dielectric antireflection layer also comprises a top layer dielectric anti-reflective layer, is positioned on the described N layer anti-reflecting layer combination.
Described N layer is 3 layers.
Described dielectric anti-reflective layer is for passing through the formed silicon oxynitride of plasma enhanced chemical vapor deposition.
Described plasma foil is with N
2O plasma treatment and forming.
Described plasma foil is to be formed by one of following plasma or its combined treatment: He, Ar, O
2, and N
2
The gross thickness of described multiple-layer type dielectric antireflection layer is between between 1000 to 2000 .
The present invention also provides a kind of method that forms multiple-layer type dielectric antireflection layer, is applicable between a substrate and the photoresist layer, and be to comprise the following step: on this substrate, form one first dielectric anti-reflective layer; This first dielectric anti-reflective is placed in the gaseous plasma, on the described first dielectric anti-reflective layer, to form one first plasma foil; And on this first plasma foil, repeat to form N layer anti-reflecting layer combination, and wherein N is a natural number, between 1-4, and wherein each anti-reflecting layer combination comprises a dielectric anti-reflective layer and and is positioned at plasma foil on this dielectric anti-reflective layer.
The method of described formation multiple-layer type dielectric antireflection layer also comprises a step: form a top layer dielectric anti-reflective layer in described N layer anti-reflecting layer combination.
Described N layer is 3 layers.
Described dielectric anti-reflective layer is by the formed silicon oxynitride of plasma enhanced chemical vapor deposition.
Described gaseous plasma is N
2The O plasma.
Described gaseous plasma is to be selected from one of following plasma or its combination: He, Ar, O
2With N
2
The gross thickness of described multiple-layer type dielectric antireflection layer is between between 1000 to 2000 .
Described dielectric anti-reflective was placed in the gaseous plasma 5 to 20 seconds.
The present invention also provides a kind of formation method of multiple-layer type dielectric antireflection layer, and it comprises the following step: a. deposits a dielectric anti-reflective layer; B. this dielectric anti-reflective is placed in the plasma gas, to form a plasma film on above-mentioned dielectric anti-reflective layer, wherein this dielectric anti-reflective layer constitutes the combination of one first anti-reflecting layer with this plasma film that is positioned on this dielectric anti-reflective layer; C. measure the absorption coefficient and the refractive index of this first anti-reflecting layer combination; And repeating step a, b and c, to form a multiple-layer type dielectric antireflection layer, wherein also be included in before the repeating step a, simulate composition, thickness and the plasma-treating technology condition of tentative calculation according to measured absorption coefficient and refractive index earlier to determine each anti-reflecting layer in the described multiple-layer type dielectric antireflection layer.
Described dielectric anti-reflective layer is by the formed silicon oxynitride of plasma enhanced chemical vapor deposition.
Described plasma gas is N
2The O plasma.
Described gaseous plasma is to be selected from one of following plasma or its combination: He, Ar, O
2With N
2
Described step a and b are repetition 2 to 5 times.
The gross thickness of described multiple-layer type dielectric antireflection layer is between 1000 to 2000 .
Described step b was placed on described dielectric anti-reflective in the gaseous plasma 5 to 20 seconds.
According to a kind of multiple-layer type dielectric antireflection layer of the present invention and its formation method, be to be applicable between a substrate and the photoresist layer, be on this substrate, to form one first dielectric anti-reflective layer earlier, then will place a gaseous plasma forming one first plasma foil on this first dielectric anti-reflective layer, and wherein this first dielectric anti-reflective layer and this first plasma foil form anti-reflecting layer combination.Then form this anti-reflecting layer combination of N layer on this first plasma foil in regular turn, wherein N is a natural number, between 1～4.By said method, form the dielectric anti-reflective layer structure of a multiple field.
In said structure, more can further comprise a top layer dielectric anti-reflective layer, be formed on this anti-reflecting layer combination of this N layer.
And in a preferred embodiment, the N value is 3, and four layers anti-reflecting layer makes up as a multiple-layer type dielectric antireflection layer to form altogether.Wherein said dielectric anti-reflective layer can pass through plasma enhanced chemical vapor deposition (plasma enhanced chemical vapor deposition, PECVD), to form silicon oxynitride film (SiOxNyHz).And the above-mentioned gas plasma can be N
2O, He, Ar, N
2, O
2And in said structure, and this dielectric layer can place this gaseous plasma 5 to 20 seconds to finish the plasma treatment reaction.And the gross thickness of this multiple-layer type dielectric antireflection layer can be between between 1000 to 2000 .
For allow above-mentioned purpose of the present invention, feature, and advantage can become apparent, following conjunction with figs. is described in detail below.
Description of drawings
Figure 1 shows that the photolithographic structures of existing a kind of bottom layer anti-reflection layer;
Figure 2 shows that the photolithographic structures of existing a kind of dielectric anti;
Figure 3 shows that in one embodiment of this invention the structure one of antireflecting coating;
Figure 4 shows that in one embodiment of this invention the structure two of antireflecting coating;
Figure 5 shows that in one embodiment of this invention the structure three of antireflecting coating.
Embodiment
Fig. 3 to Fig. 5 has represented the structure of three kinds of antireflecting coating in one embodiment of the invention, below describes in detail according to the multiple-layer type dielectric antireflection layer of this embodiment and the comparative result of two kinds of dielectric anti-reflective layer structures.Wherein the equipment that is adopted is the Producer board of company of Applied Materials Inc, and measured value is all measured with Thermal Wave OP 5340.
Structure one
Shown in Fig. 3 structure one, general common anti-reflecting layer structure.On substrate 30, utilize chemical vapour deposition (CVD), the SiON dielectric layer 32 of deposition one deck 1200 .Then be divided into three kinds of processing modes after having deposited, on dielectric layer 32, form a plasma film 34 respectively, as utilize N
2 O plasma treatment 20 seconds (I), or utilize He plasma treatment 20 seconds (II), perhaps do not carry out plasma treatment (III).
Structure two
Shown in Fig. 4 structure two, a kind of repeatedly dielectric anti-reflective layer structure of deposition.On substrate 40, utilizing chemical vapour deposition (CVD) to divide four deposition four layer thicknesses respectively is the SiON dielectric layer of 300 , also is that the dielectric layer of 1200 is as anti-reflecting layer 42 and form gross thickness.Yet all do not do plasma treatment therebetween between any interface.
Structure three
Shown in Fig. 5 structure three, according to a kind of multiple-layer type dielectric antireflection layer structure in one embodiment of the invention.On substrate 50, earlier in the plasma enhanced chemical vapor deposition mode, deposition one deck 300 silicon oxynitride films (SiOxNyHz) are as SiON dielectric layer 52.Then utilized the N2O plasma treatment thereon 20 seconds, to form a plasma film 54.SiON dielectric layer 52 forms antireflection combination X with 54 of plasma foils.Then 3 layers of antireflection of repetitiousness formation in regular turn make up X again, and it is alternate with plasma foil to form dielectric layer, altogether total dielectric anti-reflective layer of four layers antireflection combination.The comparative result of above-mentioned three kinds of structures then is described with table 1.
Table 1
| T */NU #％ | RI **/NU #％ | k ***/NU #％ | ||
| 300 | Structure two | 307/1.09 | 1.853/2.04 | 0.6757/3.12 |
| Structure three | 302/1.10 | 1.772/1.86 | 0.6487/3.21 | |
| 900 | Structure two | 867/0.86 | 1.990/0.18 | 0.410/1.30 |
| Structure three | 872/0.76 | 1.924/0.22 | 0.372/2.30 |
| 1200 | Structure one (I) | 1170/0.91 | 1.971/0.505 | 0.446/5.07 |
| Structure one (II) | 1171/0.89 | 1.987/0.245 | 0.443/3.86 | |
| Structure one (III) | 1177/0.90 | 1.989/0.226 | 0.443/2.205 | |
| Structure two | 1146/0.87 | 1.983/0.30 | 0.43 14/3.235 | |
| Structure three | 1152/0.78 | 1.936/1.85 | 0.3713/4.638 |
*: thickness (Thickness, T)
*: refractive index (Refractive Index, RI) n
* *: absorption coefficient (Extinction Coefficient) k
#: unevenness (Non-Uniformity, NU)
In table 1, at first more once deposit I, II and the III of the structure one of 1200 anti-reflecting layers.The darc layer one-tenth-value thickness 1/10 that deposited for actual measurement of T value wherein.And relatively three RI (n) and k value, the III of plasma treatment is not passed through and through 20 seconds N in the surface as can be seen
2The II that 1 and 20 second He that O handles handles does not have difference greatly, shows behind the darc layer of primary depositing adequate thickness, whether passes through plasma treatment again, and is little for the change of its thickness and n and k value.
Then comparative structure two and structure three are in the change of properties of thickness 300 layers.By the data in the table as can be seen, do not pass through the structure two of plasma treatment with through 20 seconds N
2The structure three that O handles has evident difference between its RI (n) and k value.Show that the deposition segment thickness can make the n of anti-reflecting layer and the generation of k value significantly change through after the plasma treatment earlier.
Then comparative structure two and structure three are in the change of properties of thickness 900 layers.The variation of data demonstrates identical trend in table, do not pass through the structure two of plasma treatment with through 20 seconds N
2The structure three that O handles also has evident difference at 900 layers between its n and k value.
Comparative structure one (I), structure two and structure three are in the change of properties that is all 1200 layers.Compare in twos, show the structure one (I) of primary depositing 1200 with through 20 seconds N2O plasma treatment structures two, perhaps and the n between the structure three and k value evident difference is all arranged.And the n and the k value difference of three on structure two and structure are different also quite obvious.
Generally speaking, designed according to this invention through 20 seconds N
2The multiple-layer type dielectric antireflection layer structure III of O plasma treatment, its n and k value all have a declining tendency.And compare with the structure I I of no plasma treatment, tangible difference is all arranged.
Therefore,, the anti-reflecting layer that utilizes multiple field can be clearly learnt, the n and the k value that change each antireflection combination x can be adjusted by the comparison of above-mentioned three kinds of structures.Referring to Fig. 5,, replace the antireflection of simple layer with the DARC structure of multiple field.When photoetching light 51 enters photoresist layer, the reflection ray of each bed boundary 54 and substrate 50, can strengthen the n of anti-reflecting layer and the adjustment of k value because of each dielectric anti-reflective layer and plasma, and realize effective loss interference, eliminate of the interference of bottom substrate reverberation photoetching process.
Therefore, propose a kind of method that forms multiple-layer type dielectric antireflection layer in according to the present invention,, can realize that per stage forms the some of integral thickness by the chemical vapour deposition technique of multistage plasma heavier-duty to realize the adjustment of RI and K value.By suitable plasma surface treatment, changing the concentration of anti-reflecting layer interlayer, and the optical property of anti-reflecting layer can be by the adjustment of forming part, or the condition of plasma treatment and suitable adjustment.
Below referring to Fig. 5, illustrate according to a kind of method that forms multiple-layer type dielectric antireflection layer of the present invention.At first, on substrate 50, deposit a dielectric layer 52.Wherein, substrate 50 can be the semiconductor silicon base, comprise the multiple semiconductor element on it, and dielectric layer 52 can utilize plasma enhanced chemical vapor deposition (PECVD) 300 silicon oxynitride films (SiOxNyHz) as SiON dielectric layer 52, and so the material of this dielectric layer and formation method are not as limit.
Then on dielectric layer 52, utilize plasma treatment one appropriate time, as with N
2O plasma treatment 5 to 20 seconds is to form a plasma film 54.So, dielectric layer 52 forms antireflection combination X with 54 of plasma foils.Then, as required, repetitiousness forms several layers of anti-reflecting layer in regular turn, and the preferably forms 2-5 antireflection combination X, and better person forms four layers of antireflection combination X in substrate 50.At last, then one form the dielectric layer multiple-layer type dielectric antireflection layer alternate with plasma foil, its gross thickness can be between 500-2000 , and the preferably is about 1000 .At last, form a photoresist layer 56 thereon.
In said method, preferable plasma process conditions is to import about 85%N
2O gas, with 15% oxygen mix, and with the energy excitation plasma of RF between 500 to 1500 watts.Other adoptable plasma gass can comprise O
2, N
2, Ar, He or the like.
In the present invention, above-mentioned multiple-layer type dielectric antireflection layer structure can be simulated composition, thickness and plasma process conditions to determine each layer earlier according to different technology and regularization condition.By selecting the antireflection combination of the different numbers of plies.Can between substrate and photoresist layer, form the antireflection combination stacked structure of 2-5 layer,, obtain best N and K value, the catoptrical purpose of elimination photoetching process of realizing ideal so as to according to polytechnic situation.
And above-mentioned multiple-layer type dielectric antireflection layer structure, its each layer thickness scope also can be according to arts demand and effect adjustment, and the thickness of every layer of antireflection combination X can be identical, also can be difference, can be adjusted according to its anti-reflection effect.And the deposit thickness of each dielectric layer among each antireflection combination X can be to decide according to its antireflection performance for identical or different.
Though the present invention discloses as above by preferred embodiment; yet it is not in order to limit the present invention; the those of ordinary skill of the industry may carry out some changes and retouching, so protection scope of the present invention should be with being as the criterion that claims were defined without departing from the spirit and scope of the present invention.
Claims (22)
1. a multiple-layer type dielectric antireflection layer is applicable between a substrate and the photoresist layer, it is characterized in that it comprises:
One first dielectric anti-reflective layer is positioned on this substrate;
One first plasma foil is positioned on this first dielectric anti-reflective layer; And
The combination of the anti-reflecting layer of N layer is positioned on this first plasma book film, and wherein N is a natural number, and between 1-4, and wherein each anti-reflecting layer combination comprises a dielectric anti-reflective layer and and is positioned at plasma foil on this dielectric anti-reflective layer.
2. multiple-layer type dielectric antireflection layer as claimed in claim 1 is characterized in that also comprising a top layer dielectric anti-reflective layer, is positioned on the described N layer anti-reflecting layer combination.
3. multiple-layer type dielectric antireflection layer as claimed in claim 1 is characterized in that described N layer is 3 layers.
4. multiple-layer type dielectric antireflection layer as claimed in claim 1 is characterized in that described dielectric anti-reflective layer is for passing through the formed silicon oxynitride of plasma enhanced chemical vapor deposition.
5. multiple-layer type dielectric antireflection layer as claimed in claim 1 is characterized in that described plasma foil is with N
2O plasma treatment and forming.
6. multiple-layer type dielectric antireflection layer as claimed in claim 1 is characterized in that described plasma foil is to be formed by one of following plasma or its combined treatment: He, Ar, O
2, and N
2
7. multiple-layer type dielectric antireflection layer as claimed in claim 1, the gross thickness that it is characterized in that described multiple-layer type dielectric antireflection layer is between between 1000 to 2000 .
8. a method that forms multiple-layer type dielectric antireflection layer is applicable between a substrate and the photoresist layer, is to comprise the following step:
On this substrate, form one first dielectric anti-reflective layer;
This first dielectric anti-reflective is placed in the gaseous plasma, on the described first dielectric anti-reflective layer, to form one first plasma foil; And
Repeat to form N layer anti-reflecting layer combination on this first plasma foil, wherein N is a natural number, and between 1-4, and wherein each anti-reflecting layer combination comprises a dielectric anti-reflective layer and and is positioned at plasma foil on this dielectric anti-reflective layer.
9. the method for formation multiple-layer type dielectric antireflection layer as claimed in claim 8 is characterized in that, also comprises a step: form a top layer dielectric anti-reflective layer in described N layer anti-reflecting layer combination.
10. the method for formation multiple-layer type dielectric antireflection layer as claimed in claim 8 is characterized in that described N layer is 3 layers.
11. the method for formation multiple-layer type dielectric antireflection layer as claimed in claim 8 is characterized in that described dielectric anti-reflective layer is by the formed silicon oxynitride of plasma enhanced chemical vapor deposition.
12. the method for formation multiple-layer type dielectric antireflection layer as claimed in claim 8 is characterized in that described gaseous plasma is N
2The O plasma.
13. the method for formation multiple-layer type dielectric antireflection layer as claimed in claim 8 is characterized in that described gaseous plasma is to be selected from one of following plasma or its combination: He, Ar, O
2With N
2
14. the method for formation multiple-layer type dielectric antireflection layer as claimed in claim 8, the gross thickness that it is characterized in that described multiple-layer type dielectric antireflection layer is between between 1000 to 2000 .
15. the method for formation multiple-layer type dielectric antireflection layer as claimed in claim 8 is characterized in that described dielectric anti-reflective was placed in the gaseous plasma 5 to 20 seconds.
16. the formation method of a multiple-layer type dielectric antireflection layer is characterized in that it comprises the following step:
A. deposit a dielectric anti-reflective layer;
B. this dielectric anti-reflective is placed in the plasma gas, to form a plasma film on above-mentioned dielectric anti-reflective layer, wherein this dielectric anti-reflective layer constitutes the combination of one first anti-reflecting layer with this plasma film that is positioned on this dielectric anti-reflective layer;
C. measure the absorption coefficient and the refractive index of this first anti-reflecting layer combination; And
Repeating step a, b and c, to form a multiple-layer type dielectric antireflection layer, wherein also be included in before the repeating step a, simulate composition, thickness and the plasma-treating technology condition of tentative calculation according to measured absorption coefficient and refractive index earlier to determine each anti-reflecting layer in the described multiple-layer type dielectric antireflection layer.
17. the formation method of multiple-layer type dielectric antireflection layer as claimed in claim 16 is characterized in that described dielectric anti-reflective layer is by the formed silicon oxynitride of plasma enhanced chemical vapor deposition.
18. the formation method of multiple-layer type dielectric antireflection layer as claimed in claim 16 is characterized in that described plasma gas is N
2The O plasma.
19. the formation method of multiple-layer type dielectric antireflection layer as claimed in claim 16 is characterized in that described gaseous plasma is to be selected from one of following plasma or its combination: He, Ar, O
2With N
2
20. the formation method of multiple-layer type dielectric antireflection layer as claimed in claim 16 is characterized in that described step a and b are repetition 2 to 5 times.
21. the formation method of multiple-layer type dielectric antireflection layer as claimed in claim 16, the gross thickness that it is characterized in that described multiple-layer type dielectric antireflection layer are between 1000 to 2000 .
22. the formation method of multiple-layer type dielectric antireflection layer as claimed in claim 16 is characterized in that described step b was placed on described dielectric anti-reflective in the gaseous plasma 5 to 20 seconds.
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| FR2980394B1 (en) * | 2011-09-26 | 2013-10-18 | Commissariat Energie Atomique | MULTILAYER STRUCTURE PROVIDING IMPROVED GAS SEALING |
| CN103094072B (en) * | 2011-11-01 | 2016-03-30 | 无锡华润上华科技有限公司 | Improve the method for gate lithography critical dimension uniformity on wafer |
| CN103981508A (en) * | 2014-04-25 | 2014-08-13 | 武汉新芯集成电路制造有限公司 | Silicon oxynitride gradient anti-reflection thin film and preparation process thereof |
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