CN1191044A - 制作具有耦合波导的dfb激光二极管和dfb激光二极管层结构的方法 - Google Patents

制作具有耦合波导的dfb激光二极管和dfb激光二极管层结构的方法 Download PDF

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Publication number
CN1191044A
CN1191044A CN96195612A CN96195612A CN1191044A CN 1191044 A CN1191044 A CN 1191044A CN 96195612 A CN96195612 A CN 96195612A CN 96195612 A CN96195612 A CN 96195612A CN 1191044 A CN1191044 A CN 1191044A
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CN
China
Prior art keywords
layer
layers
substrate
stack
conductivity type
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Pending
Application number
CN96195612A
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English (en)
Chinese (zh)
Inventor
B·斯特米勒
R·马茨
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Siemens Corp
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Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of CN1191044A publication Critical patent/CN1191044A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1231—Grating growth or overgrowth details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
CN96195612A 1995-05-18 1996-05-03 制作具有耦合波导的dfb激光二极管和dfb激光二极管层结构的方法 Pending CN1191044A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19518350.9 1995-05-18
DE19518350 1995-05-18

Publications (1)

Publication Number Publication Date
CN1191044A true CN1191044A (zh) 1998-08-19

Family

ID=7762304

Family Applications (1)

Application Number Title Priority Date Filing Date
CN96195612A Pending CN1191044A (zh) 1995-05-18 1996-05-03 制作具有耦合波导的dfb激光二极管和dfb激光二极管层结构的方法

Country Status (10)

Country Link
US (1) US6067312A (enExample)
EP (1) EP0826256B1 (enExample)
JP (1) JP3347738B2 (enExample)
KR (1) KR19990014890A (enExample)
CN (1) CN1191044A (enExample)
DE (1) DE59601459D1 (enExample)
ES (1) ES2131939T3 (enExample)
IN (1) IN188435B (enExample)
TW (1) TW315527B (enExample)
WO (1) WO1996037020A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102299483A (zh) * 2011-06-02 2011-12-28 中国科学院半导体研究所 集成光子晶体相位调制器的耦合波导激光器的制备方法
CN109510062A (zh) * 2018-12-28 2019-03-22 全磊光电股份有限公司 掩埋dfb激光器及其制备方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2481017A1 (en) * 2002-04-02 2003-10-09 Koninklijke Philips Electronics N.V. Dual stack optical data storage medium
KR100794653B1 (ko) * 2005-12-06 2008-01-14 한국전자통신연구원 분포궤환형 양자점 반도체 레이저 구조물

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6084892A (ja) * 1983-10-15 1985-05-14 Sumitomo Electric Ind Ltd 光集積回路
JP2619057B2 (ja) * 1989-05-22 1997-06-11 三菱電機株式会社 半導体レーザの製造方法
US5358898A (en) * 1989-07-15 1994-10-25 Fujitsu Limited Method of making a tunable laser diode having a distributed feedback structure
EP0454902A3 (en) * 1990-05-03 1992-03-18 Siemens Aktiengesellschaft Monolithically integrated circuit with dfb laser diode, optical switch and waveguide connections
US5539766A (en) * 1993-08-19 1996-07-23 Matsushita Electric Industrial Co., Ltd. Distributed feedback semiconductor laser
DE4404756A1 (de) * 1994-02-15 1995-08-17 Siemens Ag Integriert optische Anordnung zur uni- und/oder bidirektionalen optischen Signalübertragung und Verfahren zur Herstellung einer Schichtstruktur eines DFB-Lasers und eines optisch an diese Schichtstruktur gekoppelten optischen Wellenleiters

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102299483A (zh) * 2011-06-02 2011-12-28 中国科学院半导体研究所 集成光子晶体相位调制器的耦合波导激光器的制备方法
CN102299483B (zh) * 2011-06-02 2012-08-15 中国科学院半导体研究所 集成光子晶体相位调制器的耦合波导激光器的制备方法
CN109510062A (zh) * 2018-12-28 2019-03-22 全磊光电股份有限公司 掩埋dfb激光器及其制备方法

Also Published As

Publication number Publication date
WO1996037020A1 (de) 1996-11-21
TW315527B (enExample) 1997-09-11
EP0826256A1 (de) 1998-03-04
DE59601459D1 (de) 1999-04-22
US6067312A (en) 2000-05-23
ES2131939T3 (es) 1999-08-01
JPH11505371A (ja) 1999-05-18
EP0826256B1 (de) 1999-03-17
IN188435B (enExample) 2002-09-21
KR19990014890A (ko) 1999-02-25
JP3347738B2 (ja) 2002-11-20

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