CN1188160A - Making of optical anti-reflection film by diamond-like and diamond compound film - Google Patents
Making of optical anti-reflection film by diamond-like and diamond compound film Download PDFInfo
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- CN1188160A CN1188160A CN97106741A CN97106741A CN1188160A CN 1188160 A CN1188160 A CN 1188160A CN 97106741 A CN97106741 A CN 97106741A CN 97106741 A CN97106741 A CN 97106741A CN 1188160 A CN1188160 A CN 1188160A
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Abstract
The diamond complex film is formed from chemical vapor deposition by using microwave plasma method on the diamond-like film made up by using high-frequency plasma method. After having been applied on the silicon solar cell and infrared detector said diamond complex film possesses optical reflection reducing effect. Said invention solves the problem of poor photoelectric conversion effect and light transmission of this type of photoelectric device, and possesses better passivation function, in particular, it can widen spectral response wavelength range of the silicon solar cell, and its reflection reducing rate is 40% approaching to theoretical value. Said invented product can be used in infrared detector, in particular in Hgde device so as to solve light transmission material, and raise its average transmisson rate.
Description
The present invention is that quasi-diamond and diamond compound film are coated on the photoelectric device, particularly makes optical anti-reflective film at silicon solar cell and infrared eye, is to belong to one of thin film technique field.
As everyone knows, diamond has the inaccessible performance of general material, advantage such as chemical stability is good, hardness is high such as having, corrosion-resistant, insulativity and optical transmission are excellent.For this reason, to the research of diamond film.Just paid attention to from late nineteen seventies, and in membrane prepare, succeedd by the various countries scientific worker. so far, have certain application, particularly utilize the characteristic of the saturating wide ranges of light, be used on the material such as germanium and made anti-reflection film.
The anti-reflection film of silicon solar cell, existing in the past SiO, TiOx, Al
2O
3Deng, but all exist anti-reflection and problem photoelectric transformation efficiency.The inventor once adopted diamond-film-like to be coated on class solar cell and the HgCdTe infrared eye first, obtained the rather good effect (patent No.: 92108354.8), but diamond-film-like is after all in corrosion stability, chemical stability, hardness, aspect such as wear resistance and even translucidus is all not as good as diamond film, especially in some special occasions, as space flight, use under oceanographic engineering and the severe environment, more demonstrate some deficiencies of diamond-film-like, for photodetector, for improving in the photodetection rate of infrared band or improving its different antireflection, HgCdTe infrared eye as 8～14 mu m wavebands, suitable material can be selected the wide ranges of anti-reflection wavelength, wear-resisting, against corrosion, the film material that insulativity is splendid, purpose of the present invention is intended to overcome above-mentioned deficiency, make the anti-reflection film of photoelectric device with the composite membrane of diamond film and diamond-film-like, particularly be coated in the solar cell that is used for envrionment conditions poor (as space), replace SiO, TiOx and unitary class diamond film etc. are for some photoelectric devices, has volatile material in the composition, as III-V, IV-VI and II-VI compound semiconductor, diamond compound film is particularly crucial, can solve the good antireflection problem of all kinds of wavelength, can guarantee that again component is not volatile, keep certain stoichiometric ratio, the erosion of extraneous severe environment, improve its stability, life-span and reliability.
According to the present invention, diamond-film-like is stated with in the patent No. 92108354.8: the sputtering instrument of mainly using high frequency 13.56MHz, by plasma activated chemical vapour deposition, raw material is that methane (or hydrogen carry organic solvent ethanol) hydrogen and argon gas are raw material, and be substrate with the photoelectric device of required deposited film material, keep pressure 10
-3～10
-2Between the torr, and between two plate electrodes, add certain dc offset voltage-100～-400V, after treating glow discharge, regulate the direct current reversed bias, the deposited film material is in substrate, and some parameters that technology relates to roughly comprise: adjusting of each component ratio etc. in high frequency power, underlayer temperature, reversed bias voltage, the mixed gas.
Should be pointed out that especially that during above-mentioned preparation diamond-film-like, the substrate that lower electrode is placed can water cooling, so prevent the overflowing or form decomposition of volatile component of substrate material.Be adapted to the performance of some labile components of the photoelectric device that III-V, IV-VI, II-VI family material constitutes such as P, As, Hg, S, In, Sb, Se, Te or the like.
If on diamond-film-like, again during the depositing diamond film, above-mentioned photoelectric device should be placed microwave plasma device, with atmosphere CH
4: H
2=1.5～3% mixed gas is introduced in the growing system, gas flow 50～100sccm (sccm-per minute standard milliliter), and the absorption power of microwave plasma method is 300～600V, underlayer temperature must be controlled at 200～500 ℃.The thickness of diamond of continued growth is 100-1000nm on quasi-diamond.Especially can be grown in solar cell and II-VI, III-V, IV-VI family contains on the photoelectric device of volatile constituent, especially to the anti-reflection film as the infrared electro device, it can protecting materials, passive surface, and the light antireflection is arranged again.The microwave source power that also relates in the production technique of diamond thin is 2.45GHz, output rating is adjustable continuously, from tens watts to 1000 watts, silica tube can be adjusted diameter range according to the size that guided transmission enters quartz chamber, except the also available alcohol of hydrogen growing diamond, methane or other alkane replace, note the control of growth conditions, generally can grow the composite membrane of uniform diamond and quasi-diamond, and photoelectric device is had the anti-reflection effect of tangible optics.
For the ease of to understanding of the present invention, 1,2 the technological process of diamond compound films is described in conjunction with the accompanying drawings, and is coated on the implementation result behind the photoelectric device.
Quasi-diamond and diamond compound film making of optical anti-reflection film Experimental equipment are seen Figure of description.Wherein figure (1) always schemes for experimental installation; Figure (2) is an A-A ' axle longitudinal sectional drawing.The smooth opticglass 13-of 1-magnetron (2.45GHz) 2-anodic current table 3-circulator 4-incident power table 5-reflective power table 6-air load 7-four screw tuner 8-rectangular waveguide 9-cut-off waveguide 10-crystal reaction tube 11-reaction gas inlet 12-optical temperature meter 14-plasma slab 15-substrate 16-plasma slab 17-sealing connection 18-short-circuit plunger 19-water coolant among the figure (expression microwave source in the dashed rectangle).
Embodiment, utilize among Fig. 1 shown in microwave source (as dotted line part branch mark), it is the magnetron 1 of 2.45GHz by frequency, anodic current table 2, incident power table 4, reflective power table 5, air load 6 and four screw tuners 7 are formed, and the microwave source output rating is adjustable, and be successive, peak power can reach 1000W, and the microwave that is produced by the microwave source formed in the square frame is of a size of 110 * 55mm by brassinolide
2 Rectangular waveguide 8, cut-off waveguide 9 short-circuit plungers 18 so that make microwave with 10 (or claiming reaction chamber, sediment chamber) in the crystal reaction tube of TE10 mode transfer Φ 39mm (or as required adjust), crystal reaction tube 10 horizontal positioned, adopting alcohol and hydrogen is reactant.Control hydrogen flowing quantity with gas meter, the bubbling bottle that alcohol is housed places the mixed liquid of frozen water to form air inlet unit 20, hydrogen flowing quantity by the bubbling bottle is 2sccm (a standard ml/min), through reaction gas inlet 11, enter the sediment chamber, the total flux of controlling hydrogen simultaneously is 102sccm (a standard ml/min), connect the depressurized system unit 21 of bleeding at the rear portion of reaction chamber and keep the air pressure of reaction chamber at 2.0kPa～7.0kPa, and deposition power is generally 300～450W, for understanding the temperature in the reaction chamber, with photoelectric thermometer 13, see through smooth opticglass 12 and detect.Get 200～500 ℃ of substrate base temperature, the former diamond-film-like that deposits one deck 100nm by high frequency plasma chemical vapour deposition (patent No. 92108354.8) in its surface.Substrate 15 (silicon chip of crystal orientation [111], can as required with silicon solar cell, II-VI, III-V, IV-VI compound semiconductor photoelectric material) is positioned on the quartz boat 14, makes it all to immerse microwave-excitation and introduces in the plasma slab 16 that the back produced.Film thickness can make 0.1mm～1mm.
On the quasi-diamond and the diamond compound film that make, learn that after tested film makes the anti-reflection rate of the short-circuit current of silicon solar cell 〉=38%.And approach theoretical value 40%, the present invention also is applied to make anti-reflection film on the HgCdTe of II-VI family, wavelength 4～14 μ m, and transmitance on average improves more than 16%, improve more than 22% in 8 μ m place transmitances, diamond compound film has better passivation condition than simple diamond-film-like.
Diamond compound film has good anti-reflection effectiveness again as the existing passivation of optical anti-reflective film, is wide application, practical film.
Claims (4)
1, a kind of diamond film that makes with high frequency plasma body method vapour deposition diamond-film-like and microwave plasma, be deposited on photoelectric device surfaces such as germanium, make the diamond compound film with antireflection, feature of the present invention is to make the diamond compound film with the anti-reflection and passivation effect of light on silicon solar cell and infrared eye surface.
2,, it is characterized in that the effect of the anti-reflection and passivation of on the infrared eye that II-VI, IV-VI, III-V compound material are made tool optics according to the diamond compound film of claim 1.
3,, it is characterized in that having the anti-reflection effect of optics on the infrared eye that the HgCdTe material constituted according to the diamond compound film of right 1,2.
4,, it is characterized in that having the effect of the volatilization that prevents P, As, Hg, In, S, Te, Se component and nonstoichiometry ratio according to the diamond compound film of right 1,2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN97106741A CN1188160A (en) | 1997-11-24 | 1997-11-24 | Making of optical anti-reflection film by diamond-like and diamond compound film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN97106741A CN1188160A (en) | 1997-11-24 | 1997-11-24 | Making of optical anti-reflection film by diamond-like and diamond compound film |
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|---|---|
| CN1188160A true CN1188160A (en) | 1998-07-22 |
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| CN97106741A Pending CN1188160A (en) | 1997-11-24 | 1997-11-24 | Making of optical anti-reflection film by diamond-like and diamond compound film |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1304857C (en) * | 2005-04-22 | 2007-03-14 | 吉林大学 | ZnS infrared window transparent increasing protective film and its preparing method |
| US7459188B2 (en) | 2004-12-02 | 2008-12-02 | Alliance For Sustainable Energy, Llc | Method and apparatus for making diamond-like carbon films |
| CN100523288C (en) * | 2002-09-30 | 2009-08-05 | 范应用物理研究院 | High velocity method for deposing diamond films from a gaseous phase in shf discharge plasma and device for carrying out said method |
| CN103887167A (en) * | 2014-04-16 | 2014-06-25 | 株洲南车时代电气股份有限公司 | Method for passivating mesa of semiconductor chip |
| CN106521414A (en) * | 2016-12-13 | 2017-03-22 | 中国建筑材料科学研究总院 | Ultra-hard diamond-like antireflection film, infrared material comprising antireflection film as well as preparation method and application of antireflection film |
| CN109234673A (en) * | 2018-11-06 | 2019-01-18 | 长春理工大学 | A kind of high damage threshold anti-reflection film method prepared containing passivation layer |
| CN109923239A (en) * | 2016-09-30 | 2019-06-21 | 沙特基础工业全球技术公司 | Method for the coating of thermoplastic material plasma |
-
1997
- 1997-11-24 CN CN97106741A patent/CN1188160A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100523288C (en) * | 2002-09-30 | 2009-08-05 | 范应用物理研究院 | High velocity method for deposing diamond films from a gaseous phase in shf discharge plasma and device for carrying out said method |
| US7459188B2 (en) | 2004-12-02 | 2008-12-02 | Alliance For Sustainable Energy, Llc | Method and apparatus for making diamond-like carbon films |
| CN1304857C (en) * | 2005-04-22 | 2007-03-14 | 吉林大学 | ZnS infrared window transparent increasing protective film and its preparing method |
| CN103887167A (en) * | 2014-04-16 | 2014-06-25 | 株洲南车时代电气股份有限公司 | Method for passivating mesa of semiconductor chip |
| CN109923239A (en) * | 2016-09-30 | 2019-06-21 | 沙特基础工业全球技术公司 | Method for the coating of thermoplastic material plasma |
| CN106521414A (en) * | 2016-12-13 | 2017-03-22 | 中国建筑材料科学研究总院 | Ultra-hard diamond-like antireflection film, infrared material comprising antireflection film as well as preparation method and application of antireflection film |
| CN106521414B (en) * | 2016-12-13 | 2019-07-16 | 中国建筑材料科学研究总院 | Superhard diamond-like anti-reflection film, infra-red material with anti-reflection film and its preparation method and application |
| CN109234673A (en) * | 2018-11-06 | 2019-01-18 | 长春理工大学 | A kind of high damage threshold anti-reflection film method prepared containing passivation layer |
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