CN118661260A - 光检测装置 - Google Patents

光检测装置 Download PDF

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Publication number
CN118661260A
CN118661260A CN202380020520.6A CN202380020520A CN118661260A CN 118661260 A CN118661260 A CN 118661260A CN 202380020520 A CN202380020520 A CN 202380020520A CN 118661260 A CN118661260 A CN 118661260A
Authority
CN
China
Prior art keywords
region
semiconductor layer
gate electrode
photoelectric conversion
vertical gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380020520.6A
Other languages
English (en)
Chinese (zh)
Inventor
福井僚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN118661260A publication Critical patent/CN118661260A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
CN202380020520.6A 2022-03-15 2023-03-01 光检测装置 Pending CN118661260A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022-040717 2022-03-15
JP2022040717 2022-03-15
PCT/JP2023/007529 WO2023176449A1 (ja) 2022-03-15 2023-03-01 光検出装置

Publications (1)

Publication Number Publication Date
CN118661260A true CN118661260A (zh) 2024-09-17

Family

ID=88023568

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380020520.6A Pending CN118661260A (zh) 2022-03-15 2023-03-01 光检测装置

Country Status (7)

Country Link
US (1) US20250194274A1 (https=)
EP (1) EP4496004A4 (https=)
JP (1) JPWO2023176449A1 (https=)
KR (1) KR20240163662A (https=)
CN (1) CN118661260A (https=)
TW (1) TW202345371A (https=)
WO (1) WO2023176449A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026038469A1 (ja) * 2024-08-16 2026-02-19 ソニーセミコンダクタソリューションズ株式会社 半導体装置、光検出装置および電子機器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4341421B2 (ja) 2004-02-04 2009-10-07 ソニー株式会社 固体撮像装置
JP5401928B2 (ja) * 2008-11-06 2014-01-29 ソニー株式会社 固体撮像装置、及び電子機器
US11322533B2 (en) * 2013-03-14 2022-05-03 Sony Semiconductor Solutions Corporation Solid state image sensor tolerant to misalignment and having a high photoelectric conversion efficiency
JP6417197B2 (ja) * 2014-11-27 2018-10-31 キヤノン株式会社 固体撮像装置
JP2017055050A (ja) * 2015-09-11 2017-03-16 株式会社東芝 固体撮像装置および固体撮像装置の製造方法
JP6873905B2 (ja) * 2015-09-11 2021-05-19 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
US11069728B2 (en) * 2019-02-15 2021-07-20 Taiwan Semiconductor Manufacturing Company, Ltd. Low noise vertical gate device structure
DE112020003145T5 (de) * 2019-06-26 2022-03-17 Sony Semiconductor Solutions Corporation Festkörperbildgebungsvorrichtung
DE112020003133T5 (de) * 2019-06-26 2022-03-10 Sony Semiconductor Solutions Corporation Bildgebungsvorrichtung
KR102823598B1 (ko) * 2019-06-26 2025-06-23 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 장치
JP2021097241A (ja) * 2021-03-04 2021-06-24 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器

Also Published As

Publication number Publication date
WO2023176449A1 (ja) 2023-09-21
US20250194274A1 (en) 2025-06-12
JPWO2023176449A1 (https=) 2023-09-21
EP4496004A1 (en) 2025-01-22
KR20240163662A (ko) 2024-11-19
EP4496004A4 (en) 2025-10-15
TW202345371A (zh) 2023-11-16

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