CN1185550C - Multiple exposing method - Google Patents
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- CN1185550C CN1185550C CNB011170298A CN01117029A CN1185550C CN 1185550 C CN1185550 C CN 1185550C CN B011170298 A CNB011170298 A CN B011170298A CN 01117029 A CN01117029 A CN 01117029A CN 1185550 C CN1185550 C CN 1185550C
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Abstract
The present invention relates to a multiple exposure method which comprises the following steps: a rectangular region provided with a first and a second opposite edge groups and corresponding to rectangular patterns is formed at a photoresist layer; a first exposure region in the photoresist layer performs first exposure making technology, and the first exposure region and the rectangular region use the extended direction of the first opposite edge group as a boundary; a second exposure region in the photoresist layer performs second exposure making technology, and the second exposure region and the rectangular region use the extended direction of the second opposite edge group as a boundary; the first exposure region and the second exposure region perform development making technology, and the rectangular patterns are showed at a substrate.
Description
Technical field
The present invention relates to a kind of exposure method, particularly relate to a kind of mode that adopts multiexposure, multiple exposure at the pattern that shifts island or shrinkage pool shape, in order to increase the exposure method of pattern resolution.
Background technology
In semiconductor fabrication process, chip carries out the needed instrument of exposure of surperficial photoresist (photoresistance) except that light source, is used to provide line pattern in addition so that carry out the photomask of figure transfer.At present, along with the quick increase of amassing the body level of SIC (semiconductor integrated circuit), the desired wire spoke width of photoetching technique is also more and more littler, same, and the distance between each semiconductor subassembly also shortens day by day, and therefore, the photic zone size in the illumination is also dwindled thereupon relatively.Yet the distance between said modules can have its restriction physically because being subjected to the influence of optical characteristics in the exposure manufacture craft, and in the structure that forms island and shrinkage pool shape, the pattern that it shifted has very poor resolution usually especially.As shown in Figure 1, if want directly when structure that photoresist layer 11 forms as shown in the reference numeral 12, the transfer result of pattern is bad usually.When its reason is to expose, obtain minute sized assembly for asking, the size of photic zone is dwindled the matable assembly size in the photomask, and in the case, the diffraction phenomenon that light produced of the transmission region by island and cavernous structure is with even more serious, therefore cause the resolution of the pattern that shifts to worsen more, the pattern on the photomask correctly can't be transferred on the chip.Moreover, if will show as shown in Figure 2 repeated patterns the time, will be more difficult, this is because of (for example being when the interval between each photic zone of photomask is contracted to specific scope
Wherein λ is the irradiation light wavelength, and NA is the refractive index of irradiates light through Lens), by the light of photomask the phenomenon of diffraction will take place, thereby influence the resolution that shifts the back pattern.
At above-mentioned problem, traditional practice typically uses the lens combination of better effects and if avoids the problems referred to above than complicated control program at present, yet, but must bear huge hardware costs, and influence the output of manufacture craft because of complicated program.In addition, can use DUV and Scanner to add Mask and remove limiting pattern with OPC and PSM, but the resolution that the result still can't obtain expecting.
Summary of the invention
The object of the present invention is to provide a kind of multiple exposing method, for the not good problem of the resolution that pattern produced at transfer shrinkage pool shape or island, the scheme of solution is proposed, promptly when forming the pattern of above-mentioned shrinkage pool shape or island, and unlike the mode of prior art, directly treating the photomask limiting pattern of limiting pattern shape, but treat the photoresist of limiting pattern periphery on the Indirect exposure photoresist layer, can reach the purpose of accurate transfer pattern thus equally.
The object of the present invention is achieved like this, a kind of multiple exposing method promptly is provided, be applicable to that a photoresist layer limits a rectangular patterns, comprise the following steps: to form and have the first opposite side group and greater than the rectangular area corresponding to above-mentioned rectangular patterns of the second opposite side group of the above-mentioned first opposite side group at above-mentioned photoresist layer; The first exposure manufacture craft is carried out in first exposure area in above-mentioned photoresist layer, and above-mentioned first exposure area and above-mentioned rectangular area are the border with the bearing of trend of the first opposite side group; The second exposure manufacture craft and the 3rd exposure manufacture craft are carried out in second exposure area in above-mentioned photoresist layer and the 3rd exposure area respectively, and above-mentioned second exposure area and the 3rd exposure area and above-mentioned rectangular area are the border with the bearing of trend of the second opposite side group; And in above-mentioned first exposure area, second exposure area and the 3rd exposure area carry out the development manufacture craft, makes above-mentioned rectangular patterns be revealed in substrate.
The present invention also provides a kind of multiple exposing method, be applicable to that a photoresist layer limits a rectangular patterns, comprise the following steps: that wherein above-mentioned rectangular area has first limit, second limit, the 3rd limit and the 4th limit in the rectangular area of above-mentioned photoresist layer formation corresponding to above-mentioned rectangular patterns; The first exposure manufacture craft is carried out in first exposure area in above-mentioned photoresist layer, and above-mentioned first exposure area and above-mentioned rectangular area are the border with the bearing of trend on above-mentioned first limit; The second exposure manufacture craft is carried out in second exposure area in above-mentioned photoresist layer, and above-mentioned second exposure area and above-mentioned rectangular area are the border with the bearing of trend on above-mentioned second limit; The 3rd exposure manufacture craft is carried out in the 3rd exposure area in above-mentioned photoresist layer, and above-mentioned the 3rd exposure area and above-mentioned rectangular area are the border with above-mentioned the 3rd limit and bearing of trend; The 4th exposure manufacture craft is carried out in the 4th exposure area in above-mentioned photoresist layer, and above-mentioned the 4th exposure area and above-mentioned rectangular area are the border with the bearing of trend on above-mentioned the 4th limit; And in above-mentioned first exposure area, second exposure area, the 3rd exposure area and the 4th exposure area carry out the development manufacture craft, makes above-mentioned rectangular patterns be revealed in substrate.
In addition, on the kind of relevant photoresist, mainly can be divided into following two kinds, a kind of is can produce link (Cross Linking) after photoresist is met light, feasible photoresist structure of meeting light is strengthened and is insoluble to developer, is referred to as negative photoresist (Negative Photoresist); Another photoresist itself is insoluble in developer, but can be dissolved in developer solution because dissociate after meeting light, is referred to as positive photoresist (Positive Photoresist).Photoresist by using above-mentioned different qualities uses method provided by the present invention, the formation island that can be corresponding or the structure of shrinkage pool shape.Because according to method provided by the present invention, bigger with respect to the structure of the island of direct exposure or shrinkage pool shape at pattern dimension that each exposure program exposed, and relative distance broad, therefore need not to consider because of the not good optical characteristics of the too small resolution that causes of exposing patterns angle the problem of having avoided prior art when shifting poroid pattern, to be met with dexterously.
Description of drawings
Below in conjunction with accompanying drawing, describe embodiments of the invention in detail, wherein:
Fig. 1 directly shifts the arrangement plan for the treatment of limiting pattern at the photoresist layer for existing;
Fig. 2 directly shifts another arrangement plan for the treatment of limiting pattern at the photoresist layer for existing;
Fig. 3 A to Fig. 3 D is the operating process synoptic diagram of the described multiple exposing method of first embodiment of the invention;
Fig. 4 A to Fig. 4 D is the operating process synoptic diagram of the described multiple exposing method of second embodiment of the invention;
Fig. 5 A to Fig. 5 F is the operating process synoptic diagram of the described multiple exposing method of third embodiment of the invention;
Fig. 6 A and Fig. 6 B are for showing the photomask synoptic diagram of line type.
Embodiment
Below will introduce the embodiment that realizes the object of the invention, in following embodiment, be example to limit the single rectangular structure only, but unavailable to limit the scope of the invention, and when practice, still can be applicable to a plurality of rectangular configuration.
Consult Fig. 3 A to Fig. 3 D, Fig. 3 A to Fig. 3 D is the operating process synoptic diagram of the described multiple exposing method of first embodiment of the invention.At first, consult Fig. 3 A, define the rectangular area 22 with first and second opposite side group (22A, 22B) at photoresist layer 21, this rectangular area 22 is identical with the planform that will limit.Yet, only define this rectangular area 22 at this for the localized area is convenient, in practical application, get and directly carry out following step.Consult Fig. 3 B, the first exposure manufacture craft is carried out in first exposure area 23 in photoresist layer 21, and first exposure area 23 and rectangular area 22 are the border with the bearing of trend of the first opposite side group 22A.Then, consult Fig. 3 C, the second exposure manufacture craft is carried out in second exposure area 24 in photoresist layer 21, and second exposure area 24 and rectangular area 22 are the border with the bearing of trend of the second opposite side group 22B.At last, in first exposure area 23 and second exposure area 24 carry out the development manufacture crafts, it is caused resist layer earlier washes off, make rectangular patterns 25 be revealed in substrate 26 (shown in Fig. 3 D).
If above-mentioned light group layer 21 is positive photoresist, then last formed rectangular patterns is a shrinkage pool shape structure.Otherwise if above-mentioned light group layer 21 is a negative photoresist, then last formed rectangular patterns is an island shape structure.
Consult Fig. 4 A to Fig. 4 D, Fig. 4 A to Fig. 4 D is the operating process synoptic diagram of the described multiple exposing method of second embodiment of the invention.At first, consult Fig. 4 A, define rectangular area 32 with first and second opposite side group (32A, 32B) at photoresist layer 31, at this second opposite side group 32B greater than the first opposite side group 32A.And rectangular area 32 is identical with the planform that will limit.Yet, identical with first embodiment, only define this rectangular area 32 at this for the localized area is convenient, in practical application, get and directly carry out following step.Consult Fig. 4 B, the first exposure manufacture craft is carried out in first exposure area 33 in photoresist layer 31, and first exposure area 33 and rectangular area 32 are the border with the bearing of trend of the first opposite side group 22A.Then, consult Fig. 4 C, the second exposure manufacture craft and the 3rd exposure manufacture craft are carried out in second exposure area 34 in photoresist layer 31 and the 3rd exposure area 35 respectively, and above-mentioned second exposure area 34 and the 3rd exposure area 35 and above-mentioned rectangular area 32 are the border with the bearing of trend of the second opposite side group 32B.This reason that second exposure manufacture craft and the 3rd exposure manufacture craft are separately carried out be take second exposure area 34 and the 3rd exposure area 35 into account the position too near and influence the resolution of design transfer.At last, in first exposure area 33, second exposure area 34 and the 3rd exposure area 35 carry out the development manufacture crafts, and its photoresist layer is washed off, makes rectangular patterns 36 be revealed in substrate 37 (shown in Fig. 4 D).
Same, if above-mentioned photoresist layer 31 is positive photoresist, then last formed rectangular patterns is a shrinkage pool shape structure.Otherwise if above-mentioned photoresist layer 31 is a negative photoresist, then last formed rectangular patterns is an island shape structure.
Consult Fig. 5 A to Fig. 5 F, Fig. 5 A to Fig. 5 F shows the operating process synoptic diagram according to the described multiple exposing method of third embodiment of the invention.At first, consult Fig. 5 A, define at photoresist layer 41 and have four limits, first limit to that (rectangular area 42 of 42A～42D), this rectangular area 42 is identical with the planform that will limit.Yet, only define this rectangular area 42 at this for the localized area is convenient, in practical application, get and directly carry out following step.Consult Fig. 5 B, the first exposure manufacture craft is carried out in first exposure area 43 in photoresist layer 41, and first exposure area 43 and rectangular area 42 are the border with the bearing of trend of the first limit 42A.Then, consult Fig. 5 C, the second exposure manufacture craft is carried out in second exposure area 44 in photoresist layer 41, and second exposure area 44 and rectangular area 42 are the border with the bearing of trend of the second limit 42B.Then, consult Fig. 5 D, the 3rd exposure manufacture craft is carried out in the 3rd exposure area 45 in photoresist layer 41, and the 3rd exposure area 45 and rectangular area 42 are the border with the bearing of trend of the 3rd limit 42C.Then, consult Fig. 5 E, the 4th exposure manufacture craft is carried out in the 4th exposure area 46 in photoresist layer 41, and the 4th exposure area 46 and rectangular area 42 are the border with the bearing of trend of the 4th limit 42D.At last, respectively at first exposure area 43, second exposure area 44, the 3rd exposure area 45, and the 4th exposure area 46 carry out the development manufacture crafts, its photoresist layer is washed off, make rectangular patterns 47 be revealed in substrate 48 (shown in Fig. 5 F).
If above-mentioned light group layer 41 is positive photoresist, then last formed rectangular patterns is a shrinkage pool shape structure.Otherwise if above-mentioned light group layer 41 is a negative photoresist, then last formed rectangular patterns is an island shape structure.
Moreover according to the method that the embodiment of the invention provided, the pattern as if shifting as shown in Figure 2 then can form with the photomask shown in Fig. 6 A and Fig. 6 B respectively.Because the light transmission capacity of this kind line type photomask is big, the resolution height with respect to poroid photomask, is difficult for causing the interference of light.Respectively with these photomasks successively in the overlapping exposure of same position, if positive photoresist then can form the pattern of shrinkage pool shape, and if negative photoresist then can form the photoresist island-shaped pattern.
By the method that the embodiment of the invention provided, can corresponding formation island or the rectangular configuration of shrinkage pool shape and the pattern of repetitive structure.Because according to the method that the embodiment of the invention provided, bigger with respect to the structure of the island of direct exposure or shrinkage pool shape at pattern dimension that each exposure program exposed, and relative distance broad, therefore need not consider because of the not good optical characteristics of the too small resolution that causes of exposing patterns angle the problem of having avoided conventional art when shifting poroid pattern, to be met with dexterously.
Though abovely disclosed the present invention in conjunction with preferred embodiment; yet it is not in order to limit scope of the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can do a little change and retouching, so protection scope of the present invention should be with being as the criterion that claim was defined.
Claims (10)
1. a multiple exposing method is applicable to that a photoresist layer limits a rectangular patterns, comprises the following steps:
Form at above-mentioned photoresist layer and to have the first opposite side group and greater than the rectangular area corresponding to above-mentioned rectangular patterns of the second opposite side group of the above-mentioned first opposite side group;
The first exposure manufacture craft is carried out in first exposure area in above-mentioned photoresist layer, and above-mentioned first exposure area and above-mentioned rectangular area are the border with the bearing of trend of the first opposite side group;
The second exposure manufacture craft and the 3rd exposure manufacture craft are carried out in second exposure area in above-mentioned photoresist layer and the 3rd exposure area respectively, and above-mentioned second exposure area and the 3rd exposure area and above-mentioned rectangular area are the border with the bearing of trend of the second opposite side group; And
In above-mentioned first exposure area, second exposure area and the 3rd exposure area carry out the development manufacture craft, makes above-mentioned rectangular patterns be revealed in substrate.
2. multiple exposing method as claimed in claim 1, wherein above-mentioned photoresist layer is positive photoresist.
3. multiple exposing method as claimed in claim 2, wherein above-mentioned rectangular patterns are shrinkage pool shape structure.
4. multiple exposing method as claimed in claim 1, wherein above-mentioned photoresist layer is a negative photoresist.
5. multiple exposing method as claimed in claim 4, wherein above-mentioned rectangular patterns are island shape structure.
6. a multiple exposing method is applicable to that a photoresist layer limits a rectangular patterns, comprises the following steps:
In the rectangular area of above-mentioned photoresist layer formation corresponding to above-mentioned rectangular patterns, wherein above-mentioned rectangular area has first limit, second limit, the 3rd limit and the 4th limit;
The first exposure manufacture craft is carried out in first exposure area in above-mentioned photoresist layer, and above-mentioned first exposure area and above-mentioned rectangular area are the border with the bearing of trend on above-mentioned first limit;
The second exposure manufacture craft is carried out in second exposure area in above-mentioned photoresist layer, and above-mentioned second exposure area and above-mentioned rectangular area are the border with the bearing of trend on above-mentioned second limit;
The 3rd exposure manufacture craft is carried out in the 3rd exposure area in above-mentioned photoresist layer, and above-mentioned the 3rd exposure area and above-mentioned rectangular area are the border with the bearing of trend on above-mentioned the 3rd limit;
The 4th exposure manufacture craft is carried out in the 4th exposure area in above-mentioned photoresist layer, and above-mentioned the 4th exposure area and above-mentioned rectangular area are the border with the bearing of trend on above-mentioned the 4th limit; And
In above-mentioned first exposure area, second exposure area, the 3rd exposure area and the 4th exposure area carry out the development manufacture craft, makes above-mentioned rectangular patterns be revealed in substrate.
7. multiple exposing method as claimed in claim 6, wherein above-mentioned photoresist layer is positive photoresist.
8. multiple exposing method as claimed in claim 7, wherein above-mentioned rectangular patterns are shrinkage pool shape structure.
9. multiple exposing method as claimed in claim 6, wherein above-mentioned photoresist layer is a negative photoresist.
10. multiple exposing method as claimed in claim 9, wherein above-mentioned rectangular patterns are island shape structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011170298A CN1185550C (en) | 2001-04-19 | 2001-04-19 | Multiple exposing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011170298A CN1185550C (en) | 2001-04-19 | 2001-04-19 | Multiple exposing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1381770A CN1381770A (en) | 2002-11-27 |
| CN1185550C true CN1185550C (en) | 2005-01-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB011170298A Expired - Lifetime CN1185550C (en) | 2001-04-19 | 2001-04-19 | Multiple exposing method |
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| Country | Link |
|---|---|
| CN (1) | CN1185550C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1318914C (en) * | 2003-09-22 | 2007-05-30 | 南亚科技股份有限公司 | Method of mfg, wafer and method of evaluating overlapping alignment between light shade patterns |
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2001
- 2001-04-19 CN CNB011170298A patent/CN1185550C/en not_active Expired - Lifetime
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| Publication number | Publication date |
|---|---|
| CN1381770A (en) | 2002-11-27 |
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Granted publication date: 20050119 |