CN118543517A - Piezoelectric micromechanical ultrasonic transducer, and adjusting method, device, equipment and medium thereof - Google Patents
Piezoelectric micromechanical ultrasonic transducer, and adjusting method, device, equipment and medium thereof Download PDFInfo
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Abstract
The application relates to the technical field of ultrasonic transducers, in particular to a piezoelectric micromachined ultrasonic transducer, and an adjusting method, device, equipment and medium thereof, and aims to solve the problem that the actual working frequency and the design frequency of the ultrasonic transducer deviate to cause the signal amplitude to be reduced sharply so as to influence the use. To this end, the method of the application comprises: acquiring a target resonant frequency when direct-current voltage bias is not applied to the piezoelectric micro-mechanical ultrasonic transducer and an actual resonant frequency when direct-current voltage bias is applied to the piezoelectric micro-mechanical ultrasonic transducer, judging whether a preset matching condition is met, and if so, finishing performance adjustment of the piezoelectric micro-mechanical ultrasonic transducer; otherwise, dynamically adjusting the direct-current voltage bias and the thickness of the top electrode of the piezoelectric micromechanical ultrasonic transducer, acquiring the current resonant frequency of the piezoelectric micromechanical ultrasonic transducer as the actual resonant frequency, and continuously executing the step of judging whether the preset matching condition is met, so that the working performance of the piezoelectric micromechanical ultrasonic transducer can be effectively improved, and the frequency deviation is reduced.
Description
Technical Field
The application relates to the technical field of ultrasonic transducers, in particular to a piezoelectric micromechanical ultrasonic transducer, and an adjusting method, device, equipment and medium thereof.
Background
Ultrasonic transducers have wide application in the fields of nondestructive testing, distance detection, medical imaging, flow rate detection, and the like. The ultrasonic transducer based on the bulk piezoelectric ceramic material, which is commonly adopted by the traditional bulk pressure ultrasonic transducer, works in a thickness mode, but the acoustic coupling performance of the ultrasonic transducer is poor, and the processing cost is high. Compared with the traditional bulk piezoelectric ultrasonic transducer, the micro-Mechanical Ultrasonic Transducer (MUTs) based on the micro-electromechanical system (MEMS) technology works in a bending mode and has better acoustic coupling performance and lower processing cost, and becomes the development trend of the advanced ultrasonic transducer. In addition, the Micromechanical Ultrasonic Transducer (MUTs) has a series of advantages such as small volume, low power consumption, large bandwidth, easy array, easy integration with an electronic system and the like, and has wide application prospect.
However, frequency mismatch is one of the key issues limiting the performance of piezoelectric micromechanical ultrasound transducers. The actual operating frequency of the piezoelectric micromachined ultrasonic transducer may deviate from the design frequency by a certain range due to uncertainty factors such as processing errors. For applications requiring ultrasonic transducers to be used in pairs and in turn as transmitters and receivers, such as jet lag flow meters, a deviation in the operating frequency between the two can lead to problems such as a dramatic decrease in signal amplitude.
Disclosure of Invention
In order to solve the problems, the application provides a piezoelectric micro-mechanical ultrasonic transducer adjusting method, which comprises a top electrode, wherein the piezoelectric micro-mechanical ultrasonic transducer comprises a target resonant frequency when direct-current voltage bias is not applied to the piezoelectric micro-mechanical ultrasonic transducer and an actual resonant frequency when direct-current voltage bias is applied to the piezoelectric micro-mechanical ultrasonic transducer are obtained to judge whether the matching degree of the actual resonant frequency and the target resonant frequency meets a preset matching condition, if not, the direct-current voltage bias and the thickness of the top electrode are dynamically adjusted, the current resonant frequency of the piezoelectric micro-mechanical ultrasonic transducer is obtained as the actual resonant frequency, whether the matching degree of the actual resonant frequency and the target resonant frequency meets the preset matching condition is continuously judged until the matching degree of the actual resonant frequency and the target resonant frequency meets the preset matching condition, the performance adjustment of the piezoelectric micro-mechanical ultrasonic transducer is completed, the deviation between the actual resonant frequency of the piezoelectric micro-mechanical ultrasonic transducer and the target resonant frequency in an ideal state can reach the ideal state, and the working performance of the piezoelectric micro-mechanical ultrasonic transducer can be remarkably improved.
In a first aspect, an embodiment of the present application provides a method for adjusting a piezoelectric micromachined ultrasonic transducer, where the piezoelectric micromachined ultrasonic transducer includes a top electrode, including: acquiring a target resonant frequency when direct-current voltage bias is not applied to the piezoelectric micromachined ultrasonic transducer; acquiring an actual resonant frequency when direct-current voltage bias is applied to the piezoelectric micromachined ultrasonic transducer; judging whether the matching degree of the actual resonant frequency and the target resonant frequency meets a preset matching condition or not; if yes, finishing the performance adjustment of the piezoelectric micro-mechanical ultrasonic transducer; otherwise, dynamically adjusting the direct-current voltage bias and the thickness of the top electrode, obtaining the current resonant frequency of the piezoelectric micromechanical ultrasonic transducer as an actual resonant frequency, and continuously executing the step of judging whether the matching degree of the actual resonant frequency and the target resonant frequency meets the preset matching condition.
In a second aspect, an embodiment of the present application provides a piezoelectric micromachined ultrasonic transducer tuning device, the piezoelectric micromachined ultrasonic transducer including a top electrode, including: the first acquisition module is used for acquiring a target resonant frequency when direct-current voltage bias is not applied to the piezoelectric micromachined ultrasonic transducer; the second acquisition module is used for acquiring the actual resonant frequency when the direct-current voltage bias is applied to the piezoelectric micromechanical ultrasonic transducer; the judging module is used for judging whether the matching degree of the actual resonant frequency and the target resonant frequency meets a preset matching condition or not; the adjusting module is used for completing the performance adjustment of the piezoelectric micro-mechanical ultrasonic transducer if the matching degree of the actual resonant frequency and the target resonant frequency meets the preset matching condition; otherwise, dynamically adjusting the direct-current voltage bias and the thickness of the top electrode, obtaining the current resonant frequency of the piezoelectric micromechanical ultrasonic transducer as the actual resonant frequency, and continuing to execute the operation of the judging module.
In a third aspect, an embodiment of the present application provides a piezoelectric micromachined ultrasonic transducer, including the above second conveniently provided adjusting device for a piezoelectric micromachined ultrasonic transducer, further including: and the thickness of the piezoelectric layer is less than or equal to 2 micrometers.
In a fourth aspect, an embodiment of the present application provides an electronic device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, where the processor executes the computer program to implement the method described in the first aspect.
In a fifth aspect, an embodiment of the present application provides a computer readable storage medium storing a computer program, which when executed by a processor, implements the method according to the first aspect.
The technical scheme provided by the embodiment of the application has at least the following technical effects or advantages:
The piezoelectric micro-mechanical ultrasonic transducer comprises a top electrode, whether the matching degree of the actual resonant frequency and the target resonant frequency meets the preset matching condition is judged by acquiring the target resonant frequency when direct-current voltage bias is not applied to the piezoelectric micro-mechanical ultrasonic transducer and acquiring the actual resonant frequency when direct-current voltage bias is applied to the piezoelectric micro-mechanical ultrasonic transducer, if the matching degree of the actual resonant frequency and the target resonant frequency does not meet the preset matching condition, the direct-current voltage bias and the thickness of the top electrode are dynamically adjusted, the current resonant frequency of the piezoelectric micro-mechanical ultrasonic transducer is obtained as the actual resonant frequency, whether the matching degree of the actual resonant frequency and the target resonant frequency meets the preset matching condition is continuously judged, and the performance adjustment of the piezoelectric micro-mechanical ultrasonic transducer is completed until the matching degree of the actual resonant frequency and the target resonant frequency meets the preset matching condition, so that the deviation between the actual resonant frequency of the piezoelectric micro-mechanical ultrasonic transducer and the target resonant frequency in an ideal state can reach the ideal state, and the working performance of the piezoelectric micro-mechanical ultrasonic transducer can be remarkably improved.
Additional aspects and advantages of the application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the application.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the application. Also, like reference numerals are used to designate like parts throughout the figures. In the drawings:
FIG. 1 shows a schematic structural diagram of a piezoelectric micromachined ultrasonic transducer without DC voltage bias provided by an embodiment of the present application;
FIG. 2 is a schematic diagram of a piezoelectric micromachined ultrasonic transducer for applying DC voltage bias according to an embodiment of the present application;
FIG. 3 is a flow chart of a method for adjusting a piezoelectric micromachined ultrasonic transducer according to an embodiment of the present application;
FIG. 4 is a graph showing the current resonant frequency versus applied DC voltage bias for a piezoelectric micromachined ultrasonic transducer according to an embodiment of the present application at a first operating frequency;
FIG. 5 is a graph showing the current resonant frequency versus applied DC voltage bias for a piezoelectric micromachined ultrasonic transducer according to an embodiment of the present application at a second operating frequency;
FIG. 6 is a graph showing the magnitude of impedance detected by an impedance analyzer for a piezoelectric micromachined ultrasonic transducer according to an embodiment of the present application;
Fig. 7 is a schematic diagram showing frequency domain observation of a piezoelectric micromachined ultrasonic transducer under dc voltage bias by a laser doppler vibrometer according to an embodiment of the present application;
fig. 8 is a schematic diagram showing time domain observation of a piezoelectric micromachined ultrasonic transducer under dc voltage bias by a laser doppler vibrometer according to an embodiment of the present application;
FIG. 9 is a schematic diagram showing the actual resonant frequency change loop of the piezoelectric micromachined ultrasonic transducer obtained by adjusting the thickness of the top electrode according to an embodiment of the present application;
fig. 10 is a schematic structural diagram of a piezoelectric micromachined ultrasonic transducer adjustment device according to an embodiment of the present application;
fig. 11 shows a schematic structural diagram of an electronic device according to an embodiment of the present application.
Detailed Description
Exemplary embodiments of the present application will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present application are shown in the drawings, it should be understood that the present application may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the application to those skilled in the art.
Ultrasonic transducers have wide application in the fields of nondestructive testing, distance detection, medical imaging, flow rate detection, and the like. The ultrasonic transducer based on the bulk piezoelectric ceramic material, which is commonly adopted by the traditional bulk pressure ultrasonic transducer, works in a thickness mode, but the acoustic coupling performance of the ultrasonic transducer is poor, and the processing cost is high. Compared with the traditional bulk piezoelectric ultrasonic transducer, the micro-Mechanical Ultrasonic Transducer (MUTs) based on the micro-electromechanical system (MEMS) technology works in a bending mode and has better acoustic coupling performance and lower processing cost, and becomes the development trend of the advanced ultrasonic transducer. In addition, the Micromechanical Ultrasonic Transducer (MUTs) has a series of advantages such as small volume, low power consumption, large bandwidth, easy array, easy integration with an electronic system and the like, and has wide application prospect.
Referring to fig. 1, the structure of the piezoelectric micromachined ultrasonic transducer includes a top electrode layer, a piezoelectric layer, a bottom electrode layer and a supporting layer with a cavity at the bottom, wherein the top electrode layer may be made of a thin film of conductive material such as Au (gold), pt (platinum), mo (molybdenum), al (aluminum), ITO (indium tin oxide); the piezoelectric layer may be formed of a thin film of a piezoelectric material such as PZT (lead zirconium titanium titanate), alN (aluminum nitride), scAlN (scandium aluminum nitride), znO (zinc oxide), KNN (potassium sodium lead niobate); the support layer may be made of a thin film such as Si (silicon), glass (Glass), PI (polyimide), or the like. Among them, PZT and AlN are two of the most commonly used piezoelectric materials in piezoelectric micromachined ultrasonic transducers. AlN does not contain lead element, the processing technology does not need to be subjected to a high-temperature process, and is frequently used for a receiving device, and correspondingly, PZT has a better piezoelectric coefficient, so that the PZT is often used for a transmitting device, and each single piezoelectric micromachined ultrasonic transducer can realize the functions of receiving and transmitting.
When the piezoelectric micro-mechanical ultrasonic transducer works as a transmitter, an electric signal is added between the top electrode and the bottom electrode, and an external electric field between the top electrode and the bottom electrode can generate transverse stress in the piezoelectric material film due to the inverse piezoelectric effect, so that the film at the top of the cavity is bent, sound pressure is generated and propagates to the surrounding environment, when the piezoelectric micro-mechanical ultrasonic transducer receives the sound pressure, the external acoustic signal causes the transducer to deform, and the deformation of the piezoelectric micro-mechanical ultrasonic transducer is converted into a corresponding electric signal under the piezoelectric effect and is output to an external circuit.
However, frequency mismatch is one of the key issues limiting the performance of piezoelectric micromechanical ultrasound transducers. The actual operating frequency of the piezoelectric micromachined ultrasonic transducer may deviate from the design frequency by a certain range due to uncertainty factors such as processing errors. For applications requiring ultrasonic transducers to be used in pairs and in turn as transmitters and receivers, such as jet lag flow meters, a deviation in the operating frequency between the two can lead to problems such as a dramatic decrease in signal amplitude.
Based on this, referring to fig. 2, a direct-current voltage bias can be applied to the piezoelectric micro-mechanical ultrasonic transducer, and the actual generated resonance frequency is changed by controllably adjusting the internal stress of the piezoelectric layer of the piezoelectric micro-mechanical ultrasonic transducer and optimizing the thickness of the top electrode of the piezoelectric micro-mechanical ultrasonic transducer, so that the deviation between the actual resonance frequency and the target resonance frequency in an ideal state is reduced, and the working performance of the piezoelectric micro-mechanical ultrasonic transducer is improved.
Further, the piezoelectric layer of the piezoelectric micro-mechanical ultrasonic transducer can be manufactured by using a high-quality construction manufacturing process, so that the thickness of the piezoelectric layer of the piezoelectric micro-mechanical ultrasonic transducer is less than or equal to 2 microns, the piezoelectric micro-mechanical ultrasonic transducer can realize large-range resonance frequency regulation and control, and further flexible switching of the piezoelectric micro-mechanical ultrasonic transducer between a relatively low-frequency working mode and a relatively high-frequency mode is realized.
Specifically, the embodiment of the application provides a piezoelectric micromachined ultrasonic transducer adjusting method. The following describes embodiments of the present application in detail with reference to the drawings.
Referring to a flowchart of a method for adjusting a piezoelectric micromachined ultrasonic transducer shown in fig. 3, the method specifically includes the steps of:
Step 101: and acquiring a target resonant frequency when no direct-current voltage bias is applied to the piezoelectric micromechanical ultrasonic transducer.
In this embodiment, the target resonant frequency refers to a resonant frequency generated by the piezoelectric micromachined ultrasonic transducer in an ideal case when no dc voltage bias is applied to the piezoelectric micromachined ultrasonic transducer.
In one embodiment, the mass density, bending stiffness and shape of the piezoelectric micromechanical ultrasonic transducer can be obtained, then the length attribute of the piezoelectric micromechanical ultrasonic transducer is obtained based on the shape of the piezoelectric micromechanical ultrasonic transducer, and finally the target resonant frequency is obtained based on the mass density, bending stiffness and length attribute.
The shape of the piezoelectric micromachined ultrasonic transducer may be a circle, a rectangle, or an ellipse. The embodiment of the present application is not particularly limited.
In an embodiment, in the case that the shape of the piezoelectric micro-mechanical ultrasonic transducer is a circle, a radius of the circle may be obtained as a length attribute of the piezoelectric micro-mechanical ultrasonic transducer, and then the target resonant frequency is obtained by the following formula 1 based on the mass density, the bending stiffness, and the radius, wherein the formula 1 may include:
wherein, Indicating the target resonant frequency of the antenna,The radius is indicated as such,The bending stiffness is indicated as such,Representing mass density.
In another embodiment, in the case where the shape of the piezoelectric micro-mechanical ultrasonic transducer is rectangular, the length and width of the rectangle may be obtained as the length attribute of the piezoelectric micro-mechanical ultrasonic transducer, and then the target resonance frequency is obtained by the following equation 2 based on the mass density, the flexural rigidity, and the length and width of the piezoelectric micro-mechanical ultrasonic transducer:
wherein, Indicating the target resonant frequency of the antenna,Indicating the length of the tube,The width is indicated to be large and,The bending stiffness is indicated as such,Representing mass density.
Step 102: the actual resonant frequency when a direct voltage bias is applied to the piezoelectric micromechanical ultrasonic transducer is obtained.
In one embodiment, the internal stress generated by the piezoelectric micromechanical ultrasonic transducer may be obtained, and then the actual resonant frequency when the dc voltage bias is applied to the piezoelectric micromechanical ultrasonic transducer is obtained based on the mass density, the length attribute and the internal stress of the piezoelectric micromechanical ultrasonic transducer.
In some modified embodiments, the internal stress generated by the piezoelectric micro-mechanical ultrasonic transducer is obtained, specifically, the piezoelectric coefficient of the thin film in the top electrode may be obtained, and the elastic compliance coefficient and the thickness of the piezoelectric material in the piezoelectric layer may be obtained, where the elastic compliance coefficient includes a first elastic compliance coefficient in the x direction and a second elastic compliance coefficient in the y direction in a unit area, then, based on the piezoelectric coefficient, the first elastic compliance coefficient, the second elastic compliance coefficient, the thickness and the dc voltage bias, the in-plane stress of each unit area of the piezoelectric micro-mechanical ultrasonic transducer is calculated by the following formula 3, and finally, an average value of the in-plane stress is taken as the internal stress generated by the piezoelectric micro-mechanical ultrasonic transducer, where the formula 3 may include:
wherein, Representing the in-plane stress,Representing the piezoelectric coefficient of the material,Representing a first coefficient of elastic compliance,Representing a second elastic compliance coefficient, V representing a dc voltage bias,The thickness is indicated.
As can be seen from the above embodiment in step 101, the shape of the piezoelectric micromachined ultrasonic transducer may be circular, rectangular, or elliptical. Then, in the case that the shape of the piezoelectric micro-mechanical ultrasonic transducer is a circle, based on the mass density, the length attribute, and the internal stress of the piezoelectric micro-mechanical ultrasonic transducer, the actual resonant frequency when the dc voltage bias is applied to the piezoelectric micro-mechanical ultrasonic transducer may be specifically obtained: the radius of the piezoelectric micromachined ultrasonic transducer may be obtained as a length attribute, and then the actual resonant frequency may be calculated based on the mass density, the internal stress, and the radius by the following equation 4, wherein equation 4 includes:
wherein, Indicating the actual resonant frequency of the wave,The mass density is indicated as being the value of the mass density,Representing the internal stress of the steel sheet,Representing the radius.
If the piezoelectric micromechanical ultrasonic transducer is rectangular, the length and width of the rectangle may be used as the length attribute of the piezoelectric micromechanical ultrasonic transducer; if the piezoelectric micromechanical ultrasonic transducer is elliptical, the major axis and the minor axis of the ellipse can be used as the length attribute of the piezoelectric micromechanical ultrasonic transducer, and the actual resonant frequency can be calculated based on the mass density, the internal stress and the length attribute by the principle that the actual resonant frequency is proportional to the opening root of the internal stress.
Step 103: judging whether the matching degree of the actual resonant frequency and the target resonant frequency meets a preset matching condition, if not, jumping to the step 104; otherwise, go to step 105.
In one embodiment, if the difference between the actual resonant frequency and the target resonant frequency is less than or equal to a preset threshold, it is determined that the matching degree between the actual resonant frequency and the target resonant frequency meets the preset matching condition, otherwise, it is determined that the matching degree between the actual resonant frequency and the target resonant frequency does not meet the preset matching condition.
The preset threshold value refers to a threshold value for determining whether or not the degree of matching between the actual resonance frequency and the target resonance frequency is satisfied. The preset threshold may be a threshold obtained by a person skilled in the art according to experiments, or may be a threshold obtained by a person in the art after adjusting the set threshold according to actual needs, which is not particularly limited in the embodiment of the present application.
Based on the above embodiment, in some modified embodiments, the actual anti-resonant frequency of the piezoelectric micromechanical ultrasonic transducer may be further obtained, based on the actual resonant frequency and the actual anti-resonant frequency, an electromechanical coupling coefficient of the piezoelectric micromechanical ultrasonic transducer is calculated, if the electromechanical coupling coefficient is greater than or equal to a preset coefficient threshold, it is determined that the matching degree of the actual resonant frequency and the target resonant frequency meets the preset matching condition, otherwise, it is determined that the matching degree of the actual resonant frequency and the target resonant frequency does not meet the preset matching condition.
Further, the electromechanical coupling coefficient of the piezoelectric micro-mechanical ultrasonic transducer is calculated based on the actual resonance frequency and the actual antiresonance frequency, specifically, the electromechanical coupling coefficient is calculated based on the actual resonance frequency and the actual antiresonance frequency by the following formula 5:
wherein, Representing the coefficient of electromechanical coupling,Indicating the actual anti-resonant frequency of the wave,Representing the actual resonant frequency.
Further, the piezoelectric micro-mechanical ultrasonic transducer can be tested through an impedance analyzer, so that an impedance amplitude curve chart shown in fig. 6 can be obtained, and the actual anti-resonance frequency and the actual resonance frequency of the piezoelectric micro-mechanical ultrasonic transducer can be obtained.
The actual antiresonant frequency refers to the secondary resonant frequency generated when the mechanical structure and the piezoelectric material interact in the piezoelectric micromechanical ultrasonic transducer. This frequency is typically closely related to the operating characteristics and performance of the transducer.
The actual resonant frequency refers to a resonant frequency at which the transducer produces maximum amplitude and maximum efficiency when a specific electrical signal is applied in a piezoelectric micromechanical ultrasonic transducer. This frequency is typically determined by the structure and material of the transducer.
The electromechanical coupling coefficient refers to a value that characterizes the performance of the piezoelectric micromechanical ultrasonic transducer. The larger the electromechanical coupling coefficient is, the better the performance of the piezoelectric micro-mechanical ultrasonic transducer is, and the smaller the electromechanical coupling coefficient is, the worse the performance of the piezoelectric micro-mechanical ultrasonic transducer is.
Step 104: and dynamically adjusting the direct-current voltage bias and the thickness of the top electrode to obtain the current resonant frequency of the piezoelectric micro-mechanical ultrasonic transducer as the actual resonant frequency.
In the embodiment of the application, the current resonance frequency refers to the real-time resonance frequency generated by the piezoelectric micro-mechanical ultrasonic transducer under the condition that the piezoelectric micro-mechanical ultrasonic transducer is applied with direct-current voltage bias and the thicknesses of the top electrodes are different.
In one embodiment, the direct-current voltage bias and the thickness of the top electrode can be dynamically adjusted, and then the current resonant frequency of the piezoelectric micromechanical ultrasonic transducer is obtained by testing the piezoelectric micromechanical ultrasonic transducer through an impedance analyzer and is used as the actual resonant frequency; the piezoelectric micro-mechanical ultrasonic transducer can be observed in the frequency domain through a laser Doppler vibration meter to obtain the current resonant frequency corresponding to the position with the largest center displacement as the actual resonant frequency. See in particular fig. 7.
Furthermore, the piezoelectric micro-mechanical ultrasonic transducer can be observed in the time domain through a laser Doppler vibration meter, and the complete vibration condition of the whole film under direct current bias can be observed through the time domain observation, so that the change of displacement of the film along with time, namely the real vibration condition, can be determined. In particular, if the piezoelectric micromechanical ultrasonic transducer is only displaced in the center greatly and the displacement around the transducer is small, the capacity of outputting sound pressure is not very good; if the piezoelectric micro-mechanical ultrasonic transducer has uniform whole displacement and is similar to a straight up and down piston in vibration, the output sound pressure is strong and the performance is good. See in particular fig. 8.
Referring to fig. 9, the working performance of the piezoelectric micromachined ultrasonic transducer under dc voltage bias can be changed by dynamically adjusting the dc voltage bias and the thickness of the top electrode. Specifically, when different top electrode thicknesses are adopted, the distribution condition of electric fields generated in the piezoelectric layer of the piezoelectric micromechanical ultrasonic transducer by applying direct current bias is different, so that different actual vibration effects are presented, and different resonance frequencies are generated. By searching for the proper thickness of the top electrode, the electric field generated by the electrode on the piezoelectric layer can be more uniform, so that the piezoelectric micro-mechanical ultrasonic transducer under the bias of direct-current voltage shows better vibration performance, and the working performance of the piezoelectric micro-mechanical ultrasonic transducer is further improved.
Step 105: and finishing the performance adjustment of the piezoelectric micromachined ultrasonic transducer.
Referring to fig. 4, by the adjustment method of the piezoelectric micro-mechanical ultrasonic transducer according to the embodiment of the present application, the resonant frequency can be operated with the piezoelectric micro-mechanical ultrasonic transducer about 200kHz, and a frequency change greater than 200kHz is generated under the dc voltage bias, so that it can be known that by the adjustment method of the piezoelectric micro-mechanical ultrasonic transducer according to the embodiment of the present application, the piezoelectric micro-mechanical ultrasonic transducer can be operated in two modes with a larger frequency difference (such as two modes of 200kHz and 400kHz that allow the same piezoelectric micro-mechanical ultrasonic transducer to operate under different dc biases), thereby realizing flexible switching between a relatively lower frequency operation mode and a relatively higher frequency mode of the piezoelectric micro-mechanical ultrasonic transducer, meeting the requirement of some occasions for a relatively higher frequency matching degree of the piezoelectric micro-mechanical ultrasonic transducer, and meeting the application requirement of complex occasions; in the schematic diagram shown in fig. 5, through the adjustment method of the piezoelectric micromechanical ultrasonic transducer according to the embodiment of the present application, the piezoelectric micromechanical ultrasonic transducer with a resonant frequency higher than the self-designed resonant frequency can be operated at about 4.2MHz, and a frequency change of about 0.07MHz is generated under the bias of the direct current voltage, which proves that the adjustment method has an adjustment effect on the resonant frequency of the piezoelectric micromechanical ultrasonic transducer designed to operate in a low frequency band (e.g., hundreds kHz) and designed to operate in a higher frequency band (e.g., several MHz).
On the basis of the above-mentioned embodiments, in some modified embodiments, the method for adjusting a piezoelectric micromachined ultrasonic transducer according to the embodiment of the present application may also adjust an array composed of a plurality of piezoelectric micromachined ultrasonic transducers, and the embodiment of the present application is not particularly limited.
The piezoelectric micro-mechanical ultrasonic transducer comprises a top electrode, the thickness of the top electrode is adjusted, direct-current voltage bias is dynamically applied to the piezoelectric micro-mechanical ultrasonic transducer, the actual resonant frequency of the piezoelectric micro-mechanical ultrasonic transducer is obtained, then the target resonant frequency when the direct-current voltage bias is not applied to the piezoelectric micro-mechanical ultrasonic transducer is obtained, if the matching degree of the actual resonant frequency and the target resonant frequency meets the preset matching condition, the performance adjustment of the piezoelectric micro-mechanical ultrasonic transducer is completed, the thickness of the top electrode is optimized for the piezoelectric micro-mechanical ultrasonic transducer, and the direct-current voltage bias is applied to the piezoelectric micro-mechanical ultrasonic transducer, so that the deviation between the actual resonant frequency of the piezoelectric micro-mechanical ultrasonic transducer and the target resonant frequency under ideal adjustment is smaller, and the working performance of the piezoelectric micro-mechanical ultrasonic transducer is improved.
Referring to fig. 10, an embodiment of the present application further provides a piezoelectric micromachined ultrasonic transducer adjustment apparatus for performing the piezoelectric micromachined ultrasonic transducer adjustment method according to the above embodiment, where the apparatus includes:
A first acquisition module 201, configured to acquire a target resonant frequency when no dc voltage bias is applied to the piezoelectric micromachined ultrasonic transducer;
A second acquisition module 202, configured to acquire an actual resonant frequency when a dc voltage bias is applied to the piezoelectric micromachined ultrasonic transducer;
A judging module 203, configured to judge whether a matching degree between the actual resonant frequency and the target resonant frequency meets a preset matching condition;
The adjusting module 204 is configured to complete performance adjustment of the piezoelectric micro-mechanical ultrasonic transducer if the matching degree between the actual resonant frequency and the target resonant frequency meets a preset matching condition; otherwise, dynamically adjusting the direct-current voltage bias and the thickness of the top electrode, obtaining the current resonant frequency of the piezoelectric micromechanical ultrasonic transducer as the actual resonant frequency, and continuing to execute the operation of the judging module.
The piezoelectric micromachined ultrasonic transducer adjusting device provided by the embodiment of the application and the piezoelectric micromachined ultrasonic transducer adjusting method provided by the embodiment of the application have the same beneficial effects as the method adopted, operated or realized by the device because of the same inventive concept.
The embodiment of the application also provides electronic equipment corresponding to the piezoelectric micromachined ultrasonic transducer adjusting method provided by the embodiment. Referring to fig. 11, a schematic diagram of an electronic device according to some embodiments of the present application is shown. As shown in fig. 11, the electronic device 30 may include: a processor 300, a memory 301, a bus 302 and a communication interface 303, the processor 300, the communication interface 303 and the memory 301 being connected by the bus 302; the memory 301 stores a computer program that can be executed on the processor 300, where the processor 300 executes the method for adjusting the piezoelectric micromachined ultrasonic transducer according to any of the foregoing embodiments of the present application.
The memory 301 may include a high-speed random access memory (RAM: random Access Memory), and may further include a non-volatile memory (non-volatile memory), such as at least one disk memory. The communication connection between the system network element and at least one other network element is implemented through at least one physical port 303 (which may be wired or wireless), the internet, a wide area network, a local network, a metropolitan area network, etc. may be used.
Bus 302 may be an ISA bus, a PCI bus, an EISA bus, or the like. The buses may be classified as address buses, data buses, control buses, etc. The memory 301 is configured to store a program, and the processor 300 executes the program after receiving an execution instruction, and the method for adjusting a piezoelectric micromachined ultrasonic transducer according to any of the foregoing embodiments of the present application may be applied to the processor 300 or implemented by the processor 300.
The processor 300 may be an integrated circuit having signal processing capabilities. In implementation, the steps of the above method may be performed by integrated logic circuits of hardware in the processor 300 or by instructions in the form of software. The processor 300 may be a general-purpose processor, including a central processing unit (Central Processing Unit, CPU for short), a network processor (Network Processor, NP for short), etc.; but may also be a Digital Signal Processor (DSP), application Specific Integrated Circuit (ASIC), an off-the-shelf programmable gate array (FPGA) or other programmable logic device, discrete gate or transistor logic device, discrete hardware components. The disclosed methods, steps, and logic blocks in the embodiments of the present application may be implemented or performed. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like. The steps of the method disclosed in connection with the embodiments of the present application may be embodied directly in the execution of a hardware decoding processor, or in the execution of a combination of hardware and software modules in a decoding processor. The software modules may be located in a random access memory, flash memory, read only memory, programmable read only memory, or electrically erasable programmable memory, registers, etc. as well known in the art. The storage medium is located in the memory 301, and the processor 300 reads the information in the memory 301, and in combination with its hardware, performs the steps of the above method.
The electronic equipment provided by the embodiment of the application and the piezoelectric micromachined ultrasonic transducer adjusting method provided by the embodiment of the application are the same in conception and have the same beneficial effects as the method adopted, operated or realized by the electronic equipment.
The present application also provides a computer readable storage medium corresponding to the piezoelectric micromachined ultrasonic transducer adjustment method provided in the foregoing embodiment, on which a computer program (i.e., a program product) is stored, which when executed by a processor, performs the piezoelectric micromachined ultrasonic transducer adjustment method provided in any of the foregoing embodiments.
It should be noted that examples of the computer readable storage medium may also include, but are not limited to, a phase change memory (PRAM), a Static Random Access Memory (SRAM), a Dynamic Random Access Memory (DRAM), other types of Random Access Memory (RAM), a Read Only Memory (ROM), an Electrically Erasable Programmable Read Only Memory (EEPROM), a flash memory, or other optical or magnetic storage medium, which will not be described in detail herein.
The present application further provides a computer program product corresponding to the piezoelectric micro-mechanical ultrasonic transducer adjusting method provided in the foregoing embodiment, including a computer program executed by a processor to implement the piezoelectric micro-mechanical ultrasonic transducer adjusting method provided in each of the foregoing embodiments.
The computer readable storage medium and the computer program product provided by the above embodiments of the present application are the same as the method for adjusting the piezoelectric micromachined ultrasonic transducer provided by the embodiments of the present application, and have the same advantages as the method adopted, operated or implemented by the application program stored therein.
It should be noted that:
The algorithms and displays presented herein are not inherently related to any particular computer, virtual machine, or other apparatus. Various general purpose devices may also be used with the teachings herein. The required structure for the construction of such devices is apparent from the description above. In addition, the present application is not directed to any particular programming language. It will be appreciated that the teachings of the present application described herein may be implemented in a variety of programming languages, and the above description of specific languages is provided for disclosure of enablement and best mode of the present application.
In the description provided herein, numerous specific details are set forth. However, it is understood that embodiments of the application may be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description.
Similarly, it should be appreciated that in the above description of exemplary embodiments of the application, various features of the application are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various inventive aspects. However, the disclosed method should not be construed as reflecting the intention that: i.e., the claimed application requires more features than are expressly recited in each claim. Rather, as the following claims reflect, inventive aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this application.
Those skilled in the art will appreciate that the modules in the apparatus of the embodiments may be adaptively changed and disposed in one or more apparatuses different from the embodiments. The modules or units or components of the embodiments may be combined into one module or unit or component and, furthermore, they may be divided into a plurality of sub-modules or sub-units or sub-components. Any combination of all features disclosed in this specification (including any accompanying claims, abstract and drawings), and all of the processes or units of any method or apparatus so disclosed, may be used in combination, except insofar as at least some of such features and/or processes or units are mutually exclusive. Each feature disclosed in this specification (including any accompanying claims, abstract and drawings), may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise.
Furthermore, those skilled in the art will appreciate that while some embodiments described herein include some features but not others included in other embodiments, combinations of features of different embodiments are meant to be within the scope of the application and form different embodiments. For example, in the following claims, any of the claimed embodiments can be used in any combination.
Various component embodiments of the application may be implemented in hardware, or in software modules running on one or more processors, or in a combination thereof. Those skilled in the art will appreciate that some or all of the functions of some or all of the components in the creation means of a virtual machine according to an embodiment of the present application may be implemented in practice using a microprocessor or Digital Signal Processor (DSP). The present application can also be implemented as an apparatus or device program (e.g., a computer program and a computer program product) for performing a portion or all of the methods described herein. Such a program embodying the present application may be stored on a computer readable medium, or may have the form of one or more signals. Such signals may be downloaded from an internet website, provided on a carrier signal, or provided in any other form.
It should be noted that the above-mentioned embodiments illustrate rather than limit the application, and that those skilled in the art will be able to design alternative embodiments without departing from the scope of the appended claims. In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The application may be implemented by means of hardware comprising several distinct elements, and by means of a suitably programmed computer. In the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware. The use of the words first, second, third, etc. do not denote any order. These words may be interpreted as names.
The present application is not limited to the above-mentioned embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present application are intended to be included in the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. A method of tuning a piezoelectric micromachined ultrasonic transducer, the piezoelectric micromachined ultrasonic transducer including a top electrode, comprising:
acquiring a target resonant frequency when direct-current voltage bias is not applied to the piezoelectric micromachined ultrasonic transducer;
acquiring an actual resonant frequency when direct-current voltage bias is applied to the piezoelectric micromachined ultrasonic transducer;
Judging whether the matching degree of the actual resonant frequency and the target resonant frequency meets a preset matching condition or not;
if yes, finishing the performance adjustment of the piezoelectric micro-mechanical ultrasonic transducer;
Otherwise, dynamically adjusting the direct-current voltage bias and the thickness of the top electrode, obtaining the current resonant frequency of the piezoelectric micromechanical ultrasonic transducer as an actual resonant frequency, and continuously executing the step of judging whether the matching degree of the actual resonant frequency and the target resonant frequency meets the preset matching condition.
2. The method of claim 1, wherein the acquiring a target resonant frequency without applying a dc voltage bias to the piezoelectric micromachined ultrasonic transducer comprises:
acquiring the mass density, bending rigidity and shape of the piezoelectric micromechanical ultrasonic transducer;
acquiring the length attribute of the piezoelectric micromachined ultrasonic transducer based on the shape;
the target resonant frequency is obtained based on the mass density, the bending stiffness, and the length attribute.
3. The method of claim 1, wherein the acquiring an actual resonant frequency of the piezoelectric micromachined ultrasonic transducer when a dc voltage bias is applied thereto comprises:
acquiring internal stress generated by the piezoelectric micro-mechanical ultrasonic transducer;
Based on the mass density, the length attribute and the internal stress of the piezoelectric micro-mechanical ultrasonic transducer, the actual resonant frequency when the piezoelectric micro-mechanical ultrasonic transducer is applied with direct-current voltage bias is obtained.
4. The method of claim 3, wherein the piezoelectric micromachined ultrasonic transducer further comprises a piezoelectric layer, and the acquiring internal stress generated by the piezoelectric micromachined ultrasonic transducer comprises:
acquiring a piezoelectric coefficient of a film in the top electrode;
Obtaining an elastic compliance coefficient and thickness of a piezoelectric material in the piezoelectric layer, wherein the elastic compliance coefficient comprises a first elastic compliance coefficient in an x direction and a second elastic compliance coefficient in a y direction in a unit area;
Based on the piezoelectric coefficient, the first elastic compliance coefficient, the second elastic compliance coefficient, the thickness and the direct-current voltage bias, calculating in-plane stress of each unit area of the piezoelectric micromechanical ultrasonic transducer through the following formula;
Taking the average value of the in-plane stresses as the internal stress generated by the piezoelectric micro-mechanical ultrasonic transducer;
The formula includes:
wherein, Representing the in-plane stress of the said surface,Representing the coefficient of the piezoelectric force of the transducer,Representing the first coefficient of elastic compliance,Representing the second elastic compliance coefficient, V representing the dc voltage bias,Representing the thickness.
5. The method for adjusting a piezoelectric micromachined ultrasonic transducer according to any one of claims 1 to 4, wherein if a degree of matching between the actual resonant frequency and the target resonant frequency satisfies a preset matching condition, performing performance adjustment of the piezoelectric micromachined ultrasonic transducer, comprising:
And if the difference value between the actual resonant frequency and the target resonant frequency is smaller than or equal to a preset threshold value, finishing the performance adjustment of the piezoelectric micro-mechanical ultrasonic transducer.
6. The method of tuning a piezoelectric micromachined ultrasonic transducer of claim 5, further comprising:
acquiring the actual anti-resonance frequency of the piezoelectric micromechanical ultrasonic transducer;
calculating an electromechanical coupling coefficient of the piezoelectric micromachined ultrasonic transducer based on the actual resonant frequency and the actual antiresonant frequency;
And if the electromechanical coupling coefficient is greater than or equal to a preset coefficient threshold value, finishing the performance adjustment of the piezoelectric micro-mechanical ultrasonic transducer.
7. A piezoelectric micromachined ultrasonic transducer adjustment device, the piezoelectric micromachined ultrasonic transducer including a top electrode, comprising:
the first acquisition module is used for acquiring a target resonant frequency when direct-current voltage bias is not applied to the piezoelectric micromachined ultrasonic transducer;
The second acquisition module is used for acquiring the actual resonant frequency when the direct-current voltage bias is applied to the piezoelectric micromechanical ultrasonic transducer;
The judging module is used for judging whether the matching degree of the actual resonant frequency and the target resonant frequency meets a preset matching condition or not;
The adjusting module is used for completing the performance adjustment of the piezoelectric micro-mechanical ultrasonic transducer if the matching degree of the actual resonant frequency and the target resonant frequency meets the preset matching condition; otherwise, dynamically adjusting the direct-current voltage bias and the thickness of the top electrode, obtaining the current resonant frequency of the piezoelectric micromechanical ultrasonic transducer as the actual resonant frequency, and continuing to execute the operation of the judging module.
8. A piezoelectric micromachined ultrasonic transducer comprising the piezoelectric micromachined ultrasonic transducer adjustment device of claim 6, further comprising:
And the thickness of the piezoelectric layer is less than or equal to 2 micrometers.
9. An electronic device comprising a memory, a processor and a computer program stored in the memory and executable on the processor, characterized in that the processor implements the method of any of claims 1-6 when executing the computer program.
10. A computer readable storage medium storing a computer program, characterized in that the computer program, when executed by a processor, implements the method of any of claims 1-6.
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| CN202410769196.4A CN118543517A (en) | 2024-06-14 | 2024-06-14 | Piezoelectric micromechanical ultrasonic transducer, and adjusting method, device, equipment and medium thereof |
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