CN118491946A - Cleaning assembly, semiconductor manufacturing equipment and cleaning method - Google Patents
Cleaning assembly, semiconductor manufacturing equipment and cleaning method Download PDFInfo
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- CN118491946A CN118491946A CN202410955760.1A CN202410955760A CN118491946A CN 118491946 A CN118491946 A CN 118491946A CN 202410955760 A CN202410955760 A CN 202410955760A CN 118491946 A CN118491946 A CN 118491946A
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- 238000004140 cleaning Methods 0.000 title claims abstract description 219
- 238000000034 method Methods 0.000 title claims abstract description 141
- 239000004065 semiconductor Substances 0.000 title claims abstract description 115
- 238000004519 manufacturing process Methods 0.000 title description 5
- 239000007921 spray Substances 0.000 claims abstract description 32
- 239000007788 liquid Substances 0.000 claims description 29
- 238000001514 detection method Methods 0.000 claims description 20
- 239000002904 solvent Substances 0.000 claims description 17
- 238000005507 spraying Methods 0.000 claims description 10
- 238000001802 infusion Methods 0.000 claims description 4
- 230000004308 accommodation Effects 0.000 claims description 2
- 239000003292 glue Substances 0.000 abstract description 25
- 230000000694 effects Effects 0.000 abstract description 10
- 239000000243 solution Substances 0.000 description 43
- 238000000576 coating method Methods 0.000 description 21
- 239000011248 coating agent Substances 0.000 description 18
- 238000010586 diagram Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 3
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 3
- 230000013011 mating Effects 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 101000827703 Homo sapiens Polyphosphoinositide phosphatase Proteins 0.000 description 1
- 102100023591 Polyphosphoinositide phosphatase Human genes 0.000 description 1
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 1
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
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- 238000000605 extraction Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
本申请提供一种清洗组件、半导体制程设备及清洗方法。清洗组件用于清洗半导体制程设备,半导体制程设备包括承载台、第一壳体和第二壳体,第二壳体罩设在第一壳体上,且第一壳体与第二壳体间隔设置形成收容腔,承载台收容在收容腔内;清洗组件包括旋转轴;以及转盘,固定在旋转轴上,转盘上开设有引流沟槽,引流沟槽从转盘的上边缘延伸至下边缘处,转盘的下边缘处设置有与引流沟槽对应连通的喷液孔;当清洗组件用于清洗半导体制程设备时,清洗组件收容于半导体制程设备的收容腔内,转盘沿旋转轴转动,清洗溶液流经转盘上的引流沟槽,并从喷液孔喷出,以清洗收容腔。通过上述设置,能够对涂胶残留物充分地清洗,提高清洗效果。
The present application provides a cleaning component, a semiconductor process equipment and a cleaning method. The cleaning component is used to clean the semiconductor process equipment. The semiconductor process equipment includes a carrier, a first shell and a second shell. The second shell cover is arranged on the first shell, and the first shell and the second shell are arranged to form a receiving chamber. The carrier is received in the receiving chamber; the cleaning component includes a rotating shaft; and a turntable, which is fixed on the rotating shaft. A drainage groove is provided on the turntable. The drainage groove extends from the upper edge of the turntable to the lower edge. A spray hole corresponding to the drainage groove is provided at the lower edge of the turntable. When the cleaning component is used to clean the semiconductor process equipment, the cleaning component is received in the receiving chamber of the semiconductor process equipment, and the turntable rotates along the rotating shaft. The cleaning solution flows through the drainage groove on the turntable and is sprayed out from the spray hole to clean the receiving chamber. Through the above arrangement, the glue residue can be fully cleaned and the cleaning effect is improved.
Description
技术领域Technical Field
本申请涉及半导体制造技术领域,尤其涉及一种清洗组件、半导体制程设备及清洗方法。The present application relates to the field of semiconductor manufacturing technology, and in particular to a cleaning component, semiconductor process equipment and a cleaning method.
背景技术Background Art
在半导体制造工艺中,需要对待加工元件(例如晶圆、芯片等)进行清洗、氧化、涂胶、烘烤、曝光等工艺过程。在制程机台的使用过程中,甩出的光阻液等制程材料容易附着于涂胶腔室的内壁,长期不清洗会影响产品良率。In the semiconductor manufacturing process, the components to be processed (such as wafers, chips, etc.) need to be cleaned, oxidized, coated, baked, exposed, and other processes. During the use of the process machine, the thrown-out photoresist liquid and other process materials are easy to adhere to the inner wall of the coating chamber. If they are not cleaned for a long time, the product yield will be affected.
相关技术中,通常定期控制半导体制程设备处于空转状态,通过旋转用于承载待加工元件的承载台,以将清洗溶液甩至涂胶腔室的内壁来实现对涂胶腔室的自动清洗。然而,采用该种方式无法对涂胶腔室的内壁充分清洗,清洗效果较差。In the related art, semiconductor process equipment is usually controlled to be in an idle state at regular intervals, and the automatic cleaning of the glue coating chamber is achieved by rotating the carrier for carrying the components to be processed to throw the cleaning solution to the inner wall of the glue coating chamber. However, this method cannot fully clean the inner wall of the glue coating chamber, and the cleaning effect is poor.
发明内容Summary of the invention
本申请提供一种清洗组件、半导体制程设备及清洗方法,清洗组件用于清洗半导体制程设备,能够缓解相关技术中无法对半导体制程设备的涂胶腔室内壁进行充分清洗的问题,提高清洗效果,从而提高产品良率。The present application provides a cleaning component, semiconductor process equipment and a cleaning method. The cleaning component is used to clean the semiconductor process equipment, which can alleviate the problem in the related art that the inner wall of the gluing chamber of the semiconductor process equipment cannot be fully cleaned, improve the cleaning effect, and thus improve the product yield.
为解决上述技术问题,本申请一方面提供一种清洗组件,用于清洗半导体制程设备,所述半导体制程设备包括承载台、第一壳体和第二壳体,所述第二壳体罩设在所述第一壳体上,且所述第一壳体与所述第二壳体间隔设置形成收容腔,所述承载台收容在所述收容腔内;所述清洗组件包括:旋转轴;以及转盘,固定在所述旋转轴上,其中,所述转盘上开设有引流沟槽,所述引流沟槽从所述转盘的上边缘延伸至下边缘处,所述转盘的下边缘处设置有与所述引流沟槽对应连通的喷液孔;当所述清洗组件用于清洗所述半导体制程设备时,所述清洗组件收容于所述半导体制程设备的收容腔内,所述转盘沿所述旋转轴转动,清洗溶液流经所述转盘上的所述引流沟槽,并从所述喷液孔喷出,以清洗所述收容腔。To solve the above-mentioned technical problems, the present application provides, on the one hand, a cleaning component for cleaning semiconductor process equipment, wherein the semiconductor process equipment comprises a carrier, a first shell and a second shell, wherein the second shell cover is arranged on the first shell, and the first shell and the second shell are spaced apart to form a receiving chamber, wherein the carrier is received in the receiving chamber; the cleaning component comprises: a rotating shaft; and a turntable fixed on the rotating shaft, wherein a drainage groove is provided on the turntable, wherein the drainage groove extends from the upper edge of the turntable to the lower edge, and a spray hole corresponding to and connected to the drainage groove is provided at the lower edge of the turntable; when the cleaning component is used to clean the semiconductor process equipment, the cleaning component is received in the receiving chamber of the semiconductor process equipment, the turntable rotates along the rotating shaft, and the cleaning solution flows through the drainage groove on the turntable and is sprayed out from the spray hole to clean the receiving chamber.
一些实施例中,所述引流沟槽开设在所述转盘的上表面上;所述转盘的上表面为凸面,所述转盘的上边缘相对一水平面的位置高于所述转盘的下边缘相对同一水平面的位置,以使得所述上表面的径向方向相对于水平面倾斜。In some embodiments, the drainage groove is opened on the upper surface of the turntable; the upper surface of the turntable is convex, and the position of the upper edge of the turntable relative to a horizontal plane is higher than the position of the lower edge of the turntable relative to the same horizontal plane, so that the radial direction of the upper surface is inclined relative to the horizontal plane.
一些实施例中,所述转盘的下边缘设置有相对水平面向上翘曲的翘曲部,所述喷液孔位于所述翘曲部。In some embodiments, a lower edge of the turntable is provided with a warped portion that is warped upward relative to a horizontal plane, and the liquid spray hole is located at the warped portion.
一些实施例中,所述翘曲部相对于水平面的翘曲角度为1°~40°,且所述第二壳体的顶壁相对于水平面的倾斜角度为1°~40°。In some embodiments, a warping angle of the warped portion relative to a horizontal plane is 1° to 40°, and an inclination angle of a top wall of the second shell relative to a horizontal plane is 1° to 40°.
一些实施例中,从所述转盘的上边缘延伸至下边缘处的所述引流沟槽为弧形。In some embodiments, the drainage groove extending from the upper edge to the lower edge of the turntable is arc-shaped.
一些实施例中,所述清洗组件进一步包括:上盖,盖设于所述转盘上;其中,所述上盖的周向方向上设置有溶剂管道,所述上盖的上端面设置有入液口,所述上盖的下端面设置有出液口,所述出液口连通对应的所述引流沟槽,所述入液口用于连通输液管道以引入清洗溶液,所述清洗溶液通过所述溶剂管道、所述出液口分别注入至对应的所述引流沟槽。In some embodiments, the cleaning component further includes: an upper cover, which is disposed on the turntable; wherein a solvent pipeline is arranged in the circumferential direction of the upper cover, a liquid inlet is arranged on the upper end surface of the upper cover, and a liquid outlet is arranged on the lower end surface of the upper cover, the liquid outlet is connected to the corresponding drainage groove, the liquid inlet is used to connect to the infusion pipeline to introduce the cleaning solution, and the cleaning solution is respectively injected into the corresponding drainage groove through the solvent pipeline and the liquid outlet.
一些实施例中,所述上盖的径向方向相对于水平面倾斜;所述上盖的径向方向相对于水平面的倾斜角度与所述转盘的径向方向相对于水平面的倾斜角度匹配。In some embodiments, the radial direction of the upper cover is inclined relative to a horizontal plane; the inclination angle of the radial direction of the upper cover relative to the horizontal plane matches the inclination angle of the radial direction of the turntable relative to the horizontal plane.
一些实施例中,所述清洗组件进一步包括:底托,安装于所述上盖,所述底托与所述上盖之间形成容纳空间,所述转盘容置在所述容纳空间内,并在所述旋转轴的驱动下在所述容纳空间内可旋转。In some embodiments, the cleaning assembly further includes: a base support mounted on the upper cover, a receiving space being formed between the base support and the upper cover, the turntable being received in the receiving space and rotatable in the receiving space driven by the rotating shaft.
一些实施例中,所述清洗组件还包括检测组件,所述检测组件设置于所述第一壳体和/或所述第二壳体上,用于检测所述半导体制程设备的脏污程度。In some embodiments, the cleaning component further includes a detection component, which is disposed on the first shell and/or the second shell and is used to detect the degree of dirtiness of the semiconductor process equipment.
一些实施例中,所述第一壳体设置有排气通道,所述检测组件设置于所述排气通道内,用于对所述排气通道的气流进行检测,以检测所述半导体制程设备的脏污程度。In some embodiments, the first shell is provided with an exhaust channel, and the detection component is disposed in the exhaust channel for detecting the airflow in the exhaust channel to detect the degree of dirtiness of the semiconductor process equipment.
为解决上述技术问题,本申请第二方面还提供一种半导体制程设备,包括:第一壳体;第二壳体,罩设在所述第一壳体上,并与所述第一壳体间隔设置形成收容腔;承载台,收容在所述收容腔内;以及如第一方面所述的清洗组件。In order to solve the above-mentioned technical problems, the second aspect of the present application also provides a semiconductor process equipment, including: a first shell; a second shell, which is covered on the first shell and is spaced apart from the first shell to form a receiving cavity; a supporting platform, which is received in the receiving cavity; and a cleaning component as described in the first aspect.
为解决上述技术问题,本申请第三方面还提供一种清洗方法,应用于第二方面所述的半导体制程设备,所述清洗方法包括:从所述收容腔内取出待加工元件;以及将所述清洗组件放入所述收容腔内,并启动所述清洗组件对所述半导体制程设备进行清洗。In order to solve the above-mentioned technical problems, the third aspect of the present application also provides a cleaning method, which is applied to the semiconductor process equipment described in the second aspect. The cleaning method includes: taking out the component to be processed from the receiving chamber; and placing the cleaning component into the receiving chamber, and starting the cleaning component to clean the semiconductor process equipment.
一些实施例中,所述清洗方法还包括:监测所述半导体制程设备的排气通道的实时压力值,并基于所述实时压力值调整预设时间间隔,其中,所述预设时间间隔为调用所述清洗组件对所述半导体制程设备进行清洗的时间间隔。In some embodiments, the cleaning method further includes: monitoring the real-time pressure value of the exhaust channel of the semiconductor process equipment, and adjusting a preset time interval based on the real-time pressure value, wherein the preset time interval is the time interval for calling the cleaning component to clean the semiconductor process equipment.
本申请一些实施例提供的清洗组件包括旋转轴和固定在旋转轴上的转盘,旋转轴能够带动转盘转动。转盘上开设有从转盘的上边缘延伸至转盘的下边缘处的引流沟槽,转盘的下边缘处设置有与引流沟槽对应连通的喷液孔。清洗组件配置为向半导体制程设备的收容腔输送用于清洗涂胶残留物的清洗溶液。半导体制程设备的第一壳体和第二壳体间隔设置形成收容腔,当清洗组件用于清洗半导体制程设备时,清洗组件收容于收容腔内,通过旋转轴的转动,带动转盘沿旋转轴转动,使得清洗溶液能够流经引流沟槽从喷液孔喷出,以增大清洗面积,对收容腔进行更充分更全面的清洗,由此提高清洗效果,进而降低第一壳体和/或第二壳体的更换频率,延长半导体制程设备的使用寿命,尤其是第一壳体和/或第二壳体的使用寿命。The cleaning assembly provided in some embodiments of the present application includes a rotating shaft and a turntable fixed on the rotating shaft, and the rotating shaft can drive the turntable to rotate. A drainage groove extending from the upper edge of the turntable to the lower edge of the turntable is provided on the turntable, and a spray hole corresponding to the drainage groove is provided at the lower edge of the turntable. The cleaning assembly is configured to deliver a cleaning solution for cleaning glue residues to a receiving chamber of a semiconductor process device. The first shell and the second shell of the semiconductor process device are arranged at intervals to form a receiving chamber. When the cleaning assembly is used to clean the semiconductor process device, the cleaning assembly is received in the receiving chamber, and the rotating shaft is rotated to drive the turntable to rotate along the rotating shaft, so that the cleaning solution can flow through the drainage groove and spray out from the spray hole to increase the cleaning area, and the receiving chamber is cleaned more fully and comprehensively, thereby improving the cleaning effect, thereby reducing the replacement frequency of the first shell and/or the second shell, and extending the service life of the semiconductor process device, especially the service life of the first shell and/or the second shell.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
此处的附图被并入说明书中并构成本说明书的一部分,这些附图示出了符合本申请的实施例,并与说明书一起用于说明本申请的技术方案。The drawings herein are incorporated into the specification and constitute a part of the specification. These drawings illustrate embodiments consistent with the present application and are used together with the specification to illustrate the technical solution of the present application.
图1为本申请一些实施例中的安装有清洗组件的半导体制程设备的示意图;FIG. 1 is a schematic diagram of a semiconductor process equipment equipped with a cleaning component in some embodiments of the present application;
图2为图1中的安装有清洗组件的半导体制程设备的纵向截面示意图;FIG2 is a longitudinal cross-sectional schematic diagram of the semiconductor process equipment in FIG1 with a cleaning assembly installed;
图3为图1中的清洗组件的示意图;FIG3 is a schematic diagram of the cleaning assembly in FIG1 ;
图4为图1中的清洗组件的分解示意图;FIG4 is an exploded schematic diagram of the cleaning assembly in FIG1 ;
图5为本申请一些实施例中的清洗组件的示意图;FIG5 is a schematic diagram of a cleaning assembly in some embodiments of the present application;
图6为本申请一些实施例中应用图5所示的清洗组件的半导体制程设备的示意图;FIG6 is a schematic diagram of a semiconductor process equipment using the cleaning assembly shown in FIG5 in some embodiments of the present application;
图7为图6中的安装有清洗组件的半导体制程设备的纵向截面示意图;以及FIG. 7 is a schematic longitudinal cross-sectional view of the semiconductor process equipment in FIG. 6 with a cleaning assembly installed therein; and
图8为本申请一些实施例中的清洗方法的流程图。FIG. 8 is a flow chart of a cleaning method in some embodiments of the present application.
具体实施方式DETAILED DESCRIPTION
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本申请一部分实施例,而不是全部实施例。基于本申请中的实施例,本领域普通技术人员在没有做出创造性的劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.
本申请中的术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。The terms "first" and "second" in this application are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features.
本申请的描述中,“多个”的含义是至少两个,例如两个,三个等,除非另有明确具体的限定。In the description of the present application, “plurality” means at least two, such as two, three, etc., unless otherwise clearly and specifically defined.
为了便于描述,本申请一些实施例可以使用诸如“顶”、“底”、“上”、“下”等空间相对术语,以描述如实施例各附图所示的一个元件或部件与另一个(或另一些)元件或部件之间的关系。应当理解的是,除了附图中描述的方位之外,空间相对术语还旨在包括装置在使用或操作中的不同方位。例如若附图中的装置被翻转,则被描述为在其它元件或部件“下方”或“之下”的元件或部件,随后将被定位为在其它元件或部件“上方”或“之上”。For ease of description, some embodiments of the present application may use spatially relative terms such as "top", "bottom", "upper", "lower", etc. to describe the relationship between one element or component and another (or other) elements or components as shown in the various figures of the embodiments. It should be understood that in addition to the orientations described in the figures, the spatially relative terms are also intended to include different orientations of the device in use or operation. For example, if the device in the figure is turned over, the elements or components described as being "below" or "beneath" other elements or components will subsequently be positioned as being "above" or "on" the other elements or components.
此外,应当了解,除非关于特定背景、关于数值数量或其它可定量关系(例如,垂直度或平行度)另有限定,否则本文的术语“大致”的使用应被理解为指示±10%的量。因此,例如,大致平行的线可彼此成介于162°~198°之间的角度。在进一步实例中,大致为1mm~3mm之间的尺寸例如可在从0.9mm到3.3mm的范围中。In addition, it should be understood that unless otherwise limited with respect to a particular context, with respect to a numerical quantity or other quantifiable relationship (e.g., perpendicularity or parallelism), the use of the term "substantially" herein should be understood to indicate an amount of ±10%. Thus, for example, substantially parallel lines may be at an angle of between 162° and 198° to each other. In a further example, a dimension of approximately between 1 mm and 3 mm may, for example, be in the range of from 0.9 mm to 3.3 mm.
在本文中提及“实施例”意味着,结合实施例描述的特定特征、结构或特性可以包含在本申请的至少一个实施例中。在说明书中的各个位置出现该短语并不一定均是指相同的实施例,也不是与其它实施例互斥的独立的或备选的实施例。本领域技术人员显式地和隐式地理解的是,本文所描述的实施例可以与其它实施例相结合。Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.
在半导体制造工艺中,需要对待加工元件进行清洗、氧化、涂胶、烘烤、曝光等工艺过程。其中,在涂胶工艺过程中,由于半导体制程设备的涂胶腔室需持续排气,因此,对待加工元件进行旋涂时甩出的光阻液容易挥发而导致残留在涂胶腔室的内壁形成涂胶残留物。因此,需要对涂胶腔室进行清洗,以去除光阻残液。In the semiconductor manufacturing process, the components to be processed need to be cleaned, oxidized, coated, baked, exposed, and other processes. In the coating process, since the coating chamber of the semiconductor process equipment needs to be continuously exhausted, the photoresist liquid thrown out when the components to be processed are spin-coated is easy to volatilize and remain on the inner wall of the coating chamber to form coating residues. Therefore, the coating chamber needs to be cleaned to remove the residual photoresist liquid.
相关技术中,通常定期控制涂胶设备处于空转状态,通过旋转用于承载待加工元件的承载台,以将清洗溶液甩到涂胶腔室的内部来实现涂胶腔室的自动清洗。然而,采用该自动清洗过程无法对涂胶腔室的内壁充分清洗,其清洗效果较差。In the related art, the glue coating equipment is usually controlled to be in an idle state at regular intervals, and the automatic cleaning of the glue coating chamber is achieved by rotating the carrier for carrying the component to be processed to throw the cleaning solution into the interior of the glue coating chamber. However, the inner wall of the glue coating chamber cannot be fully cleaned by the automatic cleaning process, and the cleaning effect is poor.
为解决上述技术问题,本申请一些实施例提供一种清洗组件,用于清洗半导体制程设备。半导体制程设备用于对待加工元件(例如晶圆、芯片等)进行清洗、氧化、涂胶、烘烤、曝光等工艺过程,例如匀胶显影机等涂胶设备。To solve the above technical problems, some embodiments of the present application provide a cleaning component for cleaning semiconductor process equipment. Semiconductor process equipment is used to perform processes such as cleaning, oxidation, coating, baking, and exposure on components to be processed (such as wafers, chips, etc.), such as coating equipment such as a coating developer.
图1为本申请一些实施例中的安装有清洗组件20的半导体制程设备10的示意图,图2为图1中的安装有清洗组件20的半导体制程设备10的纵向截面示意图。在一些实施例中,如图1-图2所示,半导体制程设备10大体上包括承载台11、第一壳体12,和第二壳体13。其中,第二壳体13罩设在第一壳体12上。第一壳体12与第二壳体13间隔设置形成收容腔100。承载台11收容在收容腔100内。当使用半导体制程设备10进行半导体制程工艺(例如涂胶)时,待加工元件承载于承载台11上,并在收容腔100内进行相应的半导体制程(例如旋涂)。其中,第一壳体12也可以称为“内壳体”、“内腔室”等。第二壳体13也可以称为“外壳体”、“外腔室”等。承载台11可以为静电吸盘等。FIG. 1 is a schematic diagram of a semiconductor process equipment 10 with a cleaning component 20 installed in some embodiments of the present application, and FIG. 2 is a longitudinal cross-sectional schematic diagram of the semiconductor process equipment 10 with a cleaning component 20 installed in FIG. 1 . In some embodiments, as shown in FIG. 1-FIG. 2, the semiconductor process equipment 10 generally includes a carrier 11, a first shell 12, and a second shell 13. Among them, the second shell 13 is covered on the first shell 12. The first shell 12 and the second shell 13 are arranged to form a receiving chamber 100. The carrier 11 is received in the receiving chamber 100. When the semiconductor process equipment 10 is used to perform a semiconductor process (such as glue coating), the component to be processed is carried on the carrier 11, and the corresponding semiconductor process (such as spin coating) is performed in the receiving chamber 100. Among them, the first shell 12 can also be called an "inner shell", "inner chamber", etc. The second shell 13 can also be called an "outer shell", "outer chamber", etc. The carrier 11 can be an electrostatic chuck, etc.
在一些实施例中,第一壳体12和第二壳体13之间形成收容腔100。第一壳体12的顶部开设有第一开口120。第二壳体13的顶部开设有对应第一开口120的第二开口130。收容腔100分别与第一开口120和第二开口130连通。承载台11用于承载待加工元件的一侧收容于收容腔100内,承载台11的另一侧可通过第一开口120伸入第一壳体12内,并部分延伸穿出第一壳体12。当使用半导体制程设备10进行半导体制程时,待加工元件可通过第二开口130承载于承载台11上,并收容于收容腔100内。In some embodiments, a receiving chamber 100 is formed between the first shell 12 and the second shell 13. A first opening 120 is provided at the top of the first shell 12. A second opening 130 corresponding to the first opening 120 is provided at the top of the second shell 13. The receiving chamber 100 is communicated with the first opening 120 and the second opening 130, respectively. The carrier 11 is used to carry one side of the component to be processed and is received in the receiving chamber 100, and the other side of the carrier 11 can extend into the first shell 12 through the first opening 120 and partially extend out of the first shell 12. When the semiconductor process equipment 10 is used to perform a semiconductor process, the component to be processed can be carried on the carrier 11 through the second opening 130 and received in the receiving chamber 100.
在一些实施例中,第一开口120大致位于第一壳体12顶部的中心部位,第二开口130大致位于第二壳体13顶部的中心部位,且承载台11对应设置于收容腔100的中心部位,由此可使在半导体制程工艺过程中,待加工元件承载于承载台11上时,大致位于收容腔100的中心部位。在一些实施例中,当使用半导体制程设备10进行涂胶工艺时,由于承载台11的旋转作用,在收容腔100的腔壁,即第二壳体13的内壁和第一壳体12的外壁上会附着涂胶残留物。In some embodiments, the first opening 120 is approximately located at the center of the top of the first shell 12, the second opening 130 is approximately located at the center of the top of the second shell 13, and the carrier 11 is correspondingly disposed at the center of the receiving chamber 100, so that during the semiconductor process, the component to be processed is approximately located at the center of the receiving chamber 100 when it is carried on the carrier 11. In some embodiments, when the semiconductor process equipment 10 is used for the glue coating process, glue residues will be attached to the cavity wall of the receiving chamber 100, that is, the inner wall of the second shell 13 and the outer wall of the first shell 12 due to the rotation of the carrier 11.
图3为图1中的清洗组件20的示意图,图4为图2中的清洗组件20的分解示意图。如图2-图4所示,在一些实施例中,清洗组件20大体上包括旋转轴21和转盘22。转盘22固定在旋转轴21上。转盘22上开设有引流沟槽221。引流沟槽221从转盘22的上边缘延伸至转盘22的下边缘处。转盘22的下边缘处设置有与引流沟槽221对应连通的喷液孔222。FIG. 3 is a schematic diagram of the cleaning assembly 20 in FIG. 1 , and FIG. 4 is an exploded schematic diagram of the cleaning assembly 20 in FIG. 2 . As shown in FIGS. 2-4 , in some embodiments, the cleaning assembly 20 generally includes a rotating shaft 21 and a rotating disk 22. The rotating disk 22 is fixed on the rotating shaft 21. A drainage groove 221 is provided on the rotating disk 22. The drainage groove 221 extends from the upper edge of the rotating disk 22 to the lower edge of the rotating disk 22. A liquid spray hole 222 corresponding to and communicating with the drainage groove 221 is provided at the lower edge of the rotating disk 22.
在图3-图4所示的实施例中,引流沟槽221的数量为多个,且多个引流沟槽221沿转盘22的周向间隔设置,例如等间距设置;对应地,喷液孔222的数量也为多个,且喷液孔222和引流沟槽221一一对应连通。当然,在其他实施例中,引流沟槽221的数量也可以为一个,且喷液孔222的数量也对应为一个。本申请在此对引流沟槽221和喷液孔222的数量不做具体限制。In the embodiment shown in FIG. 3-FIG. 4, there are multiple drainage grooves 221, and the multiple drainage grooves 221 are arranged at intervals along the circumference of the turntable 22, for example, at equal intervals; correspondingly, there are also multiple spray holes 222, and the spray holes 222 and the drainage grooves 221 are connected one by one. Of course, in other embodiments, the number of drainage grooves 221 can also be one, and the number of spray holes 222 is also one. The present application does not specifically limit the number of drainage grooves 221 and spray holes 222.
在一些实施例中,清洗组件20被配置为向收容腔100输送用于清洗涂胶残留物的清洗溶液。其中,清洗溶液例如为光阻边角清洗剂(EBR,edge bead remover)等。In some embodiments, the cleaning component 20 is configured to deliver a cleaning solution for cleaning glue residues to the receiving chamber 100. The cleaning solution is, for example, an edge bead remover (EBR).
可以理解的是,清洗组件20并不参与半导体制程工艺(例如旋涂等)。在一些实施例中,清洗组件20可位于收容腔100外部。当需要对半导体制程设备10进行清洗时,可以在待加工元件的半导体制程工艺结束后,将待加工元件从半导体制程设备10中取出,即从第二开口130处将待加工元件从承载台11上取出,再将清洗组件20从第二开口130处伸入收容腔100,并使清洗组件20位于第一壳体12的顶部。此时,清洗组件20收容于半导体制程设备10的收容腔100内,喷液孔222与收容腔100连通。旋转轴21可转动,并带动转盘22沿旋转轴21转动,清洗溶液流经转盘22上的引流沟槽221,并从喷液孔222喷出,以将清洗溶液输送到收容腔100内,进而清洗收容腔100。当然,在其他实施例中,清洗组件20还可以设置在收容腔100内的其他位置,只要不干涉待加工元件的半导体制程工艺即可。It is understandable that the cleaning component 20 does not participate in the semiconductor process (such as spin coating, etc.). In some embodiments, the cleaning component 20 can be located outside the receiving chamber 100. When the semiconductor process equipment 10 needs to be cleaned, the component to be processed can be taken out of the semiconductor process equipment 10 after the semiconductor process of the component to be processed is completed, that is, the component to be processed is taken out from the carrier 11 from the second opening 130, and then the cleaning component 20 is extended into the receiving chamber 100 from the second opening 130, and the cleaning component 20 is located on the top of the first shell 12. At this time, the cleaning component 20 is received in the receiving chamber 100 of the semiconductor process equipment 10, and the spray hole 222 is connected to the receiving chamber 100. The rotating shaft 21 can rotate and drive the rotating disk 22 to rotate along the rotating shaft 21. The cleaning solution flows through the drainage groove 221 on the rotating disk 22 and is sprayed out from the spray hole 222 to transport the cleaning solution into the receiving chamber 100, thereby cleaning the receiving chamber 100. Of course, in other embodiments, the cleaning assembly 20 may also be disposed at other locations within the receiving chamber 100 as long as it does not interfere with the semiconductor manufacturing process of the component to be processed.
在一些实施例中,清洗组件20部分收容于收容腔100内,清洗组件20的顶部可以从第二开口130外露于半导体制程设备10。In some embodiments, the cleaning component 20 is partially received in the receiving chamber 100 , and the top of the cleaning component 20 may be exposed to the semiconductor process equipment 10 through the second opening 130 .
本申请一些实施例中,由于清洗组件20包括旋转轴21和固定在旋转轴21上的转盘22,旋转轴21能够带动转盘22转动。转盘22上开设有从转盘22的上边缘延伸至转盘22的下边缘处的引流沟槽221,转盘22的下边缘处设置有与引流沟槽221对应连通的喷液孔222。清洗组件20配置为向半导体制程设备10的收容腔100输送用于清洗涂胶残留物的清洗溶液。半导体制程设备10的第一壳体12和第二壳体13间隔设置形成收容腔100,当清洗组件20用于清洗半导体制程设备10时,清洗组件20收容于收容腔100内,通过旋转轴21的转动,带动转盘22沿旋转轴21转动,使得清洗溶液能够流经引流沟槽221从喷液孔222喷出,并喷至收容腔100内。此时,涂胶残留物可被清洗溶液溶解液化,降低涂胶残留物因排气的抽排导致的过于干燥和粘稠的概率,减少附着在收容腔100内壁的涂胶残留物,可以提高清洗效果,降低第一壳体12和/或第二壳体13的更换频率,延长第一壳体12和第二壳体13的使用寿命。此外,由于转盘22能够沿旋转轴21转动,使得清洗溶液能够沿转盘22的周向360°均匀地喷射至收容腔100内,因此可增大清洗面积,大大减少收容腔100内的涂胶残留物,对收容腔100进行更充分更全面的清洗,提高清洗效果。其中,“上边缘”可以为转盘22远离承载台11一端的边缘,也即转盘22邻近第二开口130一端的边缘;“下边缘”可以为转盘22靠近承载台11一端的边缘,也即转盘22远离第二开口130一端的边缘。In some embodiments of the present application, since the cleaning assembly 20 includes a rotating shaft 21 and a turntable 22 fixed on the rotating shaft 21, the rotating shaft 21 can drive the turntable 22 to rotate. The turntable 22 is provided with a drainage groove 221 extending from the upper edge of the turntable 22 to the lower edge of the turntable 22, and the lower edge of the turntable 22 is provided with a spray hole 222 corresponding to the drainage groove 221. The cleaning assembly 20 is configured to deliver a cleaning solution for cleaning glue residues to the receiving chamber 100 of the semiconductor process equipment 10. The first shell 12 and the second shell 13 of the semiconductor process equipment 10 are arranged at intervals to form the receiving chamber 100. When the cleaning assembly 20 is used to clean the semiconductor process equipment 10, the cleaning assembly 20 is received in the receiving chamber 100, and the rotation of the rotating shaft 21 drives the turntable 22 to rotate along the rotating shaft 21, so that the cleaning solution can flow through the drainage groove 221 and spray from the spray hole 222, and spray into the receiving chamber 100. At this time, the glue residue can be dissolved and liquefied by the cleaning solution, reducing the probability of the glue residue being too dry and sticky due to the exhaust gas extraction, reducing the glue residue attached to the inner wall of the receiving chamber 100, improving the cleaning effect, reducing the replacement frequency of the first shell 12 and/or the second shell 13, and extending the service life of the first shell 12 and the second shell 13. In addition, since the turntable 22 can rotate along the rotating shaft 21, the cleaning solution can be evenly sprayed into the receiving chamber 100 along the circumference of the turntable 22 at 360°, thereby increasing the cleaning area, greatly reducing the glue residue in the receiving chamber 100, and cleaning the receiving chamber 100 more fully and comprehensively, thereby improving the cleaning effect. Among them, the "upper edge" can be the edge of the turntable 22 away from the end of the support platform 11, that is, the edge of the turntable 22 adjacent to the second opening 130; the "lower edge" can be the edge of the turntable 22 close to the end of the support platform 11, that is, the edge of the turntable 22 away from the second opening 130.
当清洗组件20安装在收容腔100内时,转盘22具有邻近第一壳体12的下表面以及与下表面相对设置的上表面。参见图4,在一些实施例中,引流沟槽221开设在转盘22的上表面220上。转盘的上表面220为凸面,转盘22的上边缘相对一水平面的位置高于转盘22的下边缘相对同一水平面的位置,以使得上表面220的径向方向相对于水平面倾斜。其中,“水平面”可以为承载台11的承载面所定义的面。When the cleaning assembly 20 is installed in the receiving chamber 100, the turntable 22 has a lower surface adjacent to the first shell 12 and an upper surface arranged opposite to the lower surface. Referring to FIG. 4 , in some embodiments, the drainage groove 221 is provided on the upper surface 220 of the turntable 22. The upper surface 220 of the turntable is a convex surface, and the position of the upper edge of the turntable 22 relative to a horizontal plane is higher than the position of the lower edge of the turntable 22 relative to the same horizontal plane, so that the radial direction of the upper surface 220 is inclined relative to the horizontal plane. The "horizontal plane" may be a plane defined by the bearing surface of the bearing platform 11.
在一些实施例中,上表面220的径向方向相对于水平面的倾斜角度大致为1°~40°,例如1°、5°、10°、15°、20°、25°、30°、35°、40°等。在一些实施例中,上表面220的径向方向相对于水平面的倾斜角度为1°~20°、5°~30°或10°~20°。其中,上表面220的径向方向相对于水平面的倾斜角度可以根据需要进行具体选择和调整,以适应不同的半导体制程设备10和不同的清洗要求。例如,上表面220的径向方向相对于水平面的倾斜角度可根据不同半导体制程设备10的第一壳体12/第二壳体13/收容腔100的形状、尺寸等来确定。本申请在此对上表面220的径向方向相对于水平面的倾斜角度不做具体限定。In some embodiments, the radial direction of the upper surface 220 has an inclination angle relative to the horizontal plane of approximately 1° to 40°, such as 1°, 5°, 10°, 15°, 20°, 25°, 30°, 35°, 40°, etc. In some embodiments, the radial direction of the upper surface 220 has an inclination angle relative to the horizontal plane of 1° to 20°, 5° to 30°, or 10° to 20°. Among them, the inclination angle of the radial direction of the upper surface 220 relative to the horizontal plane can be specifically selected and adjusted as needed to adapt to different semiconductor process equipment 10 and different cleaning requirements. For example, the inclination angle of the radial direction of the upper surface 220 relative to the horizontal plane can be determined according to the shape, size, etc. of the first shell 12/second shell 13/accommodation cavity 100 of different semiconductor process equipment 10. The present application does not specifically limit the inclination angle of the radial direction of the upper surface 220 relative to the horizontal plane.
当清洗组件20收容于收容腔100内时,由于上表面220的径向方向相对于水平面倾斜,即转盘22的上边缘与承载台11之间的距离大于转盘22的下边缘与承载台11之间的距离,此时清洗溶液能够沿着引流沟槽221更加方便快速,且顺滑地从喷液孔222喷出。When the cleaning component 20 is accommodated in the accommodating cavity 100, since the radial direction of the upper surface 220 is inclined relative to the horizontal plane, that is, the distance between the upper edge of the turntable 22 and the supporting platform 11 is greater than the distance between the lower edge of the turntable 22 and the supporting platform 11, the cleaning solution can be more conveniently and quickly sprayed out from the spray hole 222 along the drainage groove 221 and smoothly.
在一些实施例中,从转盘22的上边缘延伸至下边缘处的引流沟槽221可以为弧形。换言之,引流沟槽221在上表面220的形状可以为弧形。在一些实施例中,引流沟槽221在上表面220的弧形的设置方向可与转盘22的转动方向相同。例如,引流沟槽221可以为沿顺时针方向设置的弧形,当需要清洗半导体制程设备10时,转盘22可以沿旋转轴21顺时针转动;又例如,引流沟槽221可以为沿逆时针方向设置的弧形,当需要清洗半导体制程设备10时,转盘22可以沿旋转轴21顺时针转动。通过引流沟槽221的弧线设置,可以调整清洗溶液的喷出角度,便于对收容腔100进行更充分地清洗。通过引流沟槽221的弧线设置与转盘22的转动方向之间的配合,能够有效降低清洗溶液在引流沟槽221中流动时产生的能量损耗,增加清洗溶液的喷出速度,提高清洗效果。In some embodiments, the drainage groove 221 extending from the upper edge to the lower edge of the turntable 22 may be arc-shaped. In other words, the shape of the drainage groove 221 on the upper surface 220 may be arc-shaped. In some embodiments, the setting direction of the arc of the drainage groove 221 on the upper surface 220 may be the same as the rotation direction of the turntable 22. For example, the drainage groove 221 may be an arc-shaped arranged in a clockwise direction, and when the semiconductor process equipment 10 needs to be cleaned, the turntable 22 may rotate clockwise along the rotation axis 21; for another example, the drainage groove 221 may be an arc-shaped arranged in a counterclockwise direction, and when the semiconductor process equipment 10 needs to be cleaned, the turntable 22 may rotate clockwise along the rotation axis 21. By setting the arc of the drainage groove 221, the spraying angle of the cleaning solution can be adjusted, so as to facilitate more thorough cleaning of the receiving chamber 100. By coordinating the arc setting of the drainage groove 221 with the rotation direction of the turntable 22, the energy loss generated when the cleaning solution flows in the drainage groove 221 can be effectively reduced, the spraying speed of the cleaning solution can be increased, and the cleaning effect can be improved.
在一些实施例中,转盘22的下边缘设置有相对水平面向上翘曲的翘曲部223。喷液孔222分别位于翘曲部223。其中,“向上翘曲”是指,翘曲部223自转盘22的下边缘沿邻近第二开口130的方向或邻近第二壳体13的顶壁的方向延伸。通过设置翘曲部223,使清洗溶液沿翘曲部223向上喷出,便于清洗第二壳体13的顶壁,增大清洗面积。In some embodiments, a warp portion 223 is provided at the lower edge of the rotating disk 22, which is warped upward relative to the horizontal plane. The liquid spray holes 222 are respectively located at the warp portions 223. Here, "warping upward" means that the warp portion 223 extends from the lower edge of the rotating disk 22 in a direction adjacent to the second opening 130 or in a direction adjacent to the top wall of the second shell 13. By providing the warp portion 223, the cleaning solution is sprayed upward along the warp portion 223, which facilitates cleaning of the top wall of the second shell 13 and increases the cleaning area.
在一些实施例中,第二壳体13具有邻近转盘22的上表面220的顶壁,且翘曲部223设置成使喷液孔222面向第二壳体13的顶壁。在一些实施例中,翘曲部223相对于水平面的翘曲角度大致为1°~40°,例如1°、3°、5°、7°、9°、10°、13°、15°、18°、20°、23°、25°、28°、30°、33°、35°、38°、40°等。在一些实施例中,翘曲部223相对于水平面的翘曲角度为1°~20°、3°~10°或5°~15°。其中,翘曲部223相对于水平面的翘曲角度可以根据需要进行具体选择和调整,以适应不同的半导体制程设备10和不同的清洗要求。In some embodiments, the second housing 13 has a top wall adjacent to the upper surface 220 of the turntable 22, and the warping portion 223 is arranged so that the spray hole 222 faces the top wall of the second housing 13. In some embodiments, the warping angle of the warping portion 223 relative to the horizontal plane is approximately 1° to 40°, such as 1°, 3°, 5°, 7°, 9°, 10°, 13°, 15°, 18°, 20°, 23°, 25°, 28°, 30°, 33°, 35°, 38°, 40°, etc. In some embodiments, the warping angle of the warping portion 223 relative to the horizontal plane is 1° to 20°, 3° to 10°, or 5° to 15°. Among them, the warping angle of the warping portion 223 relative to the horizontal plane can be specifically selected and adjusted as needed to adapt to different semiconductor process equipment 10 and different cleaning requirements.
在一些实施例中,第二壳体13的顶壁相对于水平面倾斜,转盘22的翘曲部相对于水平面的翘曲角度与第二壳体13的顶壁相对水平面的倾斜角度相适配。也即,转盘22的翘曲部相对于水平面的翘曲角度可以根据第二壳体13的顶壁相对水平面的倾斜角度进行具体选择和调整,以适应不同的半导体制程设备10。In some embodiments, the top wall of the second housing 13 is inclined relative to the horizontal plane, and the warping angle of the warped portion of the turntable 22 relative to the horizontal plane is adapted to the inclination angle of the top wall of the second housing 13 relative to the horizontal plane. That is, the warping angle of the warped portion of the turntable 22 relative to the horizontal plane can be specifically selected and adjusted according to the inclination angle of the top wall of the second housing 13 relative to the horizontal plane to adapt to different semiconductor process equipment 10.
在一些实施例中,第二壳体13的顶壁相对于水平面的倾斜角度大致为1°~40°,例如1°、5°、10°、15°、20°、25°、30°、35°、38°、40°等。在一些实施例中,第二壳体13的顶壁相对于水平面的倾斜角度为1°~20°、5°~30°或10°~20°。In some embodiments, the inclination angle of the top wall of the second shell 13 relative to the horizontal plane is approximately 1°~40°, such as 1°, 5°, 10°, 15°, 20°, 25°, 30°, 35°, 38°, 40°, etc. In some embodiments, the inclination angle of the top wall of the second shell 13 relative to the horizontal plane is 1°~20°, 5°~30° or 10°~20°.
在一些实施例中,第二壳体13的顶壁相对水平面的倾斜方向可与转盘22的上表面220相对水平面的倾斜方向相交,以增大对第二壳体13的顶壁的清洗面积。In some embodiments, the inclination direction of the top wall of the second shell 13 relative to the horizontal plane may intersect with the inclination direction of the upper surface 220 of the turntable 22 relative to the horizontal plane to increase the cleaning area of the top wall of the second shell 13 .
在相关技术中,第二壳体13的顶壁的倾斜角度和涂胶工艺中使用的光阻液的类型均会对涂胶残留物的附着位置和残留厚度产生影响。因此,在本申请一些实施例中,可以根据不同半导体制程设备10中第二壳体13顶壁的倾斜角度和使用的光阻液的类型来设置清洗溶液的喷出角度和喷出速度等,以能够对涂胶残留物进行充分清洗。In the related art, the inclination angle of the top wall of the second housing 13 and the type of photoresist used in the glue coating process will affect the attachment position and residual thickness of the glue coating residue. Therefore, in some embodiments of the present application, the spraying angle and spraying speed of the cleaning solution can be set according to the inclination angle of the top wall of the second housing 13 and the type of photoresist used in different semiconductor process equipment 10, so as to fully clean the glue coating residue.
例如,在一些实施例中,可以根据第二壳体13顶壁的倾斜角度调整翘曲部223的翘曲角度,即根据第二壳体13需要的冲洗角度调节清洗溶液的喷出角度,使得喷出的清洗溶液能够兼顾到第二壳体13的顶壁,以达到更好的清洗效果。在一些实施例中,翘曲部223相对于水平面的翘曲角度为1°~20°时,可设置第二壳体13的顶壁相对于水平面的倾斜角度为5°~30°。此种情况下,清洗组件20可以对第二壳体13的顶壁更大面积地清洗,因此,可以更充分地清洗第二壳体13。For example, in some embodiments, the warping angle of the warping portion 223 can be adjusted according to the inclination angle of the top wall of the second shell 13, that is, the spraying angle of the cleaning solution is adjusted according to the flushing angle required by the second shell 13, so that the sprayed cleaning solution can take into account the top wall of the second shell 13 to achieve a better cleaning effect. In some embodiments, when the warping angle of the warping portion 223 relative to the horizontal plane is 1°~20°, the inclination angle of the top wall of the second shell 13 relative to the horizontal plane can be set to 5°~30°. In this case, the cleaning component 20 can clean a larger area of the top wall of the second shell 13, so that the second shell 13 can be cleaned more fully.
在一些实施例中,可以通过调整喷液孔222的孔径大小来调整清洗溶液的喷出角度和/或清洗溶液的喷出速度。其中,喷液孔222的孔径可以为大致0.5mm~5mm,0.5mm、0.8mm、1mm、1.2mm、1.5mm、2mm、2.5mm、3mm、3.5mm、4mm、4.5mm、5mm等。在一些实施例中,喷液孔222的孔径可以为1mm~1.5mm,或者2mm~4mm。In some embodiments, the spray angle and/or the spray speed of the cleaning solution can be adjusted by adjusting the aperture size of the spray hole 222. The aperture of the spray hole 222 can be approximately 0.5 mm to 5 mm, 0.5 mm, 0.8 mm, 1 mm, 1.2 mm, 1.5 mm, 2 mm, 2.5 mm, 3 mm, 3.5 mm, 4 mm, 4.5 mm, 5 mm, etc. In some embodiments, the aperture of the spray hole 222 can be 1 mm to 1.5 mm, or 2 mm to 4 mm.
在一些实施例中,还可以通过调整引流沟槽221的沟槽深度、调整引流沟槽221的弧形弧度、调整清洗溶液的类型、调整旋转轴21的转速、调整清洗组件20在收容腔100内的位置(例如沿平行于旋转轴21的方向的位置)等来调整清洗溶液的喷出角度和喷出速度。In some embodiments, the spraying angle and spraying speed of the cleaning solution can also be adjusted by adjusting the groove depth of the drainage groove 221, adjusting the arc curvature of the drainage groove 221, adjusting the type of cleaning solution, adjusting the rotation speed of the rotating shaft 21, adjusting the position of the cleaning component 20 in the receiving chamber 100 (for example, the position in a direction parallel to the rotating shaft 21), etc.
参见图2-图4,在一些实施例中,清洗组件20还包括盖设于转盘22上的上盖23。上盖23的周向方向上设置有溶剂管道231。上盖23的上端面235设置有入液口232。入液口232用于连通输液管道(图未示)以引入清洗溶液。上盖23的下端面233设置有出液口234。出液口234对应连通相应的引流沟槽221。清洗溶液通过溶剂管道231、出液口234分别注入至相应的引流沟槽221。在一些实施例中,出液口234的数量与引流沟槽221的数量相同,并且出液口234与引流沟槽221一一对应连通。通过设置上盖23,可以有效防止清洗溶液从第二开口130溅射至半导体制程设备10外。Referring to FIGS. 2-4 , in some embodiments, the cleaning assembly 20 further includes an upper cover 23 that is covered on the turntable 22. A solvent pipeline 231 is provided in the circumferential direction of the upper cover 23. A liquid inlet 232 is provided on the upper end surface 235 of the upper cover 23. The liquid inlet 232 is used to connect to a liquid infusion pipeline (not shown) to introduce a cleaning solution. A liquid outlet 234 is provided on the lower end surface 233 of the upper cover 23. The liquid outlet 234 is connected to the corresponding drainage groove 221. The cleaning solution is injected into the corresponding drainage groove 221 through the solvent pipeline 231 and the liquid outlet 234. In some embodiments, the number of the liquid outlets 234 is the same as the number of the drainage grooves 221, and the liquid outlets 234 are connected to the drainage grooves 221 one by one. By providing the upper cover 23, the cleaning solution can be effectively prevented from being sputtered from the second opening 130 to the outside of the semiconductor process equipment 10.
在一些实施例中,溶剂管道231设置于上盖23朝向转盘22的一侧,入液口232、溶剂管道231以及出液口234依次连通。当清洗组件20用于清洗半导体制程设备10时,清洗溶液可从输液管道输送至溶剂管道231,并通过与溶剂管道231和收容腔100均连通的引流沟槽221输送至收容腔100内,以与收容腔100内的涂胶残留物混合,实现收容腔100的清洗。In some embodiments, the solvent pipeline 231 is disposed on a side of the upper cover 23 facing the turntable 22, and the liquid inlet 232, the solvent pipeline 231, and the liquid outlet 234 are sequentially connected. When the cleaning assembly 20 is used to clean the semiconductor process equipment 10, the cleaning solution can be transported from the liquid delivery pipeline to the solvent pipeline 231, and then transported to the receiving chamber 100 through the drainage groove 221 connected to the solvent pipeline 231 and the receiving chamber 100, so as to be mixed with the glue residue in the receiving chamber 100, thereby cleaning the receiving chamber 100.
在一些实施例中,溶剂管道231可以为通过注塑成型等工艺与上盖23一体成型的槽道结构,溶剂管道231也可以为通过焊接等工艺形成于上盖23的结构,本申请在此不做具体限定。In some embodiments, the solvent conduit 231 may be a channel structure integrally formed with the upper cover 23 by processes such as injection molding, or the solvent conduit 231 may be a structure formed on the upper cover 23 by processes such as welding, which is not specifically limited in the present application.
在一些实施例中,清洗组件20进一步包括加压元件(图未示)。加压元件与溶剂管道231连通,用于向溶剂管道231加压,使得清洗溶液以一定的速度由喷液孔222喷至收容腔100中。在一些实施例中,清洗组件20可通过加压元件向溶剂管道231施加氮气、氩气等,使得清洗溶液以大致600ml/s-800ml/s的流速输送至溶剂管道231。在一些实施例中,清洗溶液的流速可以为650ml/s、700ml/s、750ml/s等,可根据不同需求来设定。In some embodiments, the cleaning component 20 further includes a pressurizing element (not shown). The pressurizing element is connected to the solvent pipeline 231 and is used to pressurize the solvent pipeline 231 so that the cleaning solution is sprayed from the spray hole 222 into the receiving chamber 100 at a certain speed. In some embodiments, the cleaning component 20 can apply nitrogen, argon, etc. to the solvent pipeline 231 through the pressurizing element so that the cleaning solution is transported to the solvent pipeline 231 at a flow rate of approximately 600ml/s-800ml/s. In some embodiments, the flow rate of the cleaning solution can be 650ml/s, 700ml/s, 750ml/s, etc., which can be set according to different needs.
在一些实施例中,旋转轴21与旋转驱动装置(图未示)连接。旋转驱动装置用于驱动旋转轴21旋转,进而带动转盘22旋转。在一些实施例中,可以通过旋转驱动装置调整旋转轴21的转速,从而控制转盘22的转速,进而调整清洗溶液的喷出角度和喷出速度。在一些实施例中,旋转驱动装置可位于半导体制程设备10外部。上盖23的中心设置有通孔230,旋转轴21穿过通孔230以与旋转驱动装置连接。In some embodiments, the rotating shaft 21 is connected to a rotating drive device (not shown). The rotating drive device is used to drive the rotating shaft 21 to rotate, thereby driving the turntable 22 to rotate. In some embodiments, the rotating speed of the rotating shaft 21 can be adjusted by the rotating drive device, thereby controlling the rotating speed of the turntable 22, thereby adjusting the spraying angle and spraying speed of the cleaning solution. In some embodiments, the rotating drive device can be located outside the semiconductor process equipment 10. A through hole 230 is provided at the center of the upper cover 23, and the rotating shaft 21 passes through the through hole 230 to be connected to the rotating drive device.
在一些实施例中,清洗组件20可进一步与平移驱动装置(图未示)连接,用于驱动清洗组件20整体沿平行旋转轴21的方向往复运动。在一些实施例中,清洗组件20相对承载台11的运动距离可以大致为0cm~4cm,例如,0.5cm、1cm、1.5cm、2cm、2.5cm、3cm、3.5cm、4cm等。在一些实施例中,清洗组件20相对承载台11的运动距离可以为0cm~3.5cm。通过平移驱动装置带动清洗组件20整体沿平行旋转轴21的方向整体往复运动,可以有效增大清洗范围,使清洗更加全面。In some embodiments, the cleaning component 20 may be further connected to a translation drive device (not shown) to drive the cleaning component 20 to reciprocate as a whole in a direction parallel to the rotation axis 21. In some embodiments, the movement distance of the cleaning component 20 relative to the carrier 11 may be approximately 0 cm to 4 cm, for example, 0.5 cm, 1 cm, 1.5 cm, 2 cm, 2.5 cm, 3 cm, 3.5 cm, 4 cm, etc. In some embodiments, the movement distance of the cleaning component 20 relative to the carrier 11 may be 0 cm to 3.5 cm. By driving the cleaning component 20 to reciprocate as a whole in a direction parallel to the rotation axis 21 through the translation drive device, the cleaning range can be effectively increased, making the cleaning more comprehensive.
在一些实施例中,参见图2-图4,清洗组件20还包括环绕旋转轴21的外周设置的配合部25。其中,配合部25固设于上盖23上,并与旋转轴21间隔设置,用于与平移驱动装置传动连接。在一些实施例中,平移驱动装置可位于半导体制程设备10外部。配合部25部分穿出通孔230以与平移驱动装置连接。In some embodiments, referring to FIGS. 2-4 , the cleaning assembly 20 further includes a mating portion 25 disposed around the outer periphery of the rotating shaft 21. The mating portion 25 is fixedly disposed on the upper cover 23 and spaced apart from the rotating shaft 21, and is used for transmission connection with the translation drive device. In some embodiments, the translation drive device may be located outside the semiconductor process equipment 10. The mating portion 25 partially passes through the through hole 230 to be connected with the translation drive device.
在一些实施例中,上盖23的径向方向相对于水平面倾斜。上盖23的径向方向相对于水平面的倾斜角度与转盘22的径向方向相对于水平面的倾斜角度匹配,由此可以有效减小清洗溶液在转盘22转动过程中从引流沟槽221脱离的概率,减少清洗溶液在上盖23和转盘22之间的能量损耗,进而使得清洗溶液能够以更高速度且更加集中地从喷液孔222喷出。本申请中,倾斜角度“匹配”,是指两个元件的倾斜角度相同,或者大致相同。In some embodiments, the radial direction of the upper cover 23 is inclined relative to the horizontal plane. The inclination angle of the radial direction of the upper cover 23 relative to the horizontal plane matches the inclination angle of the radial direction of the turntable 22 relative to the horizontal plane, thereby effectively reducing the probability of the cleaning solution escaping from the drainage groove 221 during the rotation of the turntable 22, reducing the energy loss of the cleaning solution between the upper cover 23 and the turntable 22, and thus enabling the cleaning solution to be sprayed out from the spray hole 222 at a higher speed and in a more concentrated manner. In this application, the inclination angle "matches" means that the inclination angles of the two elements are the same, or approximately the same.
参见图3和图4,在一些实施例中,清洗组件20还包括安装于上盖23的底托24。底托24与上盖23之间形成容纳空间240,转盘22容置在容纳空间240内,并在旋转轴21的驱动下在容纳空间240内可旋转。3 and 4 , in some embodiments, the cleaning assembly 20 further includes a base 24 mounted on the upper cover 23. An accommodating space 240 is formed between the base 24 and the upper cover 23, and the turntable 22 is accommodated in the accommodating space 240 and rotatable in the accommodating space 240 under the drive of the rotating shaft 21.
在一些实施例中,上盖23和底托24彼此相对固定,且在旋转轴21驱动转盘22旋转的过程中,上盖23和底托24均固定不动。底托24与上盖23固定安装从而将转盘22收容在容纳空间240内,并且底托24与上盖23之间存在间隙,因此从喷液孔222喷出的清洗溶液能够方便地从间隙喷至收容腔100内。其中,底托24的径向方向可相对于水平面倾斜,且底托24的径向方向相对于水平面的倾斜角度与转盘22的径向方向相对于水平面的倾斜角度匹配。In some embodiments, the upper cover 23 and the bottom bracket 24 are fixed relative to each other, and in the process of the rotating shaft 21 driving the turntable 22 to rotate, the upper cover 23 and the bottom bracket 24 are both fixed. The bottom bracket 24 is fixedly installed with the upper cover 23 so that the turntable 22 is accommodated in the accommodating space 240, and there is a gap between the bottom bracket 24 and the upper cover 23, so that the cleaning solution sprayed from the spray hole 222 can be conveniently sprayed from the gap into the accommodating cavity 100. Among them, the radial direction of the bottom bracket 24 can be inclined relative to the horizontal plane, and the inclination angle of the radial direction of the bottom bracket 24 relative to the horizontal plane matches the inclination angle of the radial direction of the turntable 22 relative to the horizontal plane.
参见图4,在一些实施例中,上盖23的边缘处设置有第一固定元件236,底托24的边缘处设置有与第一固定元件236匹配的第二固定元件241。通过第一固定元件236与第二固定元件241的配合,将上盖23与底托24固定安装。其中,第一固定元件236为固定柱或固定孔中的一者,第二固定元件241为固定柱或固定孔中的另一者。其中,固定孔可以为通孔,也可以为盲孔,只要与固定柱配合将上盖23和底托24彼此固定即可。Referring to FIG. 4 , in some embodiments, a first fixing element 236 is provided at the edge of the upper cover 23, and a second fixing element 241 matching the first fixing element 236 is provided at the edge of the bottom bracket 24. The upper cover 23 and the bottom bracket 24 are fixedly installed by the cooperation of the first fixing element 236 and the second fixing element 241. The first fixing element 236 is one of a fixing column or a fixing hole, and the second fixing element 241 is the other of the fixing column or the fixing hole. The fixing hole can be a through hole or a blind hole, as long as it cooperates with the fixing column to fix the upper cover 23 and the bottom bracket 24 to each other.
例如,第一固定元件236可以为固定柱,则第二固定元件241可以为固定孔;又例如,第一固定元件236可以为固定孔,则第二固定元件241可以为固定柱。一些实施例中,固定孔可以为光孔,固定柱可以穿过固定孔,并通过螺栓等固定件固定于固定孔内。一些实施例中,固定孔可以为螺纹孔,且固定柱和固定孔之间可通过螺纹连接实现固定。本申请对固定柱和固定孔的连接配合关系不做具体限定。For example, the first fixing element 236 may be a fixing column, and the second fixing element 241 may be a fixing hole; for another example, the first fixing element 236 may be a fixing hole, and the second fixing element 241 may be a fixing column. In some embodiments, the fixing hole may be a light hole, and the fixing column may pass through the fixing hole and be fixed in the fixing hole by a fixing member such as a bolt. In some embodiments, the fixing hole may be a threaded hole, and the fixing column and the fixing hole may be fixed by a threaded connection. The present application does not specifically limit the connection and matching relationship between the fixing column and the fixing hole.
上述给出的是清洗组件20包括底托24的实施例。当然,在其他实施例中,清洗组件20自身可以不包括底托,可以借助半导体制程设备10的壳体作为清洗组件20的底托。图5为本申请一些实施例中的清洗组件20的示意图,图6为应用图5所示的清洗组件20的半导体制程设备10的示意图,图7为图6中的安装有清洗组件20的半导体制程设备10的纵向截面示意图。在一些实施例中,参见图5-图7,半导体制程设备10的第一壳体12作为清洗组件20的底托。转盘22的下边缘处设置有第三固定元件224,第一壳体12的周向方向上设置有第四固定元件121。转盘22通过第三固定元件224和第四固定元件121安装固定在第一壳体12上,且第一壳体12随着转盘22的转动而转动。其中,第三固定元件224为固定柱或固定孔中的一者,第四固定元件121为固定柱或固定孔中的另一者。其中,固定孔可以为通孔,也可以为盲孔,只要与固定柱配合将转盘22和第一壳体12彼此固定即可。The above is an embodiment in which the cleaning component 20 includes a base 24. Of course, in other embodiments, the cleaning component 20 itself may not include a base, and the housing of the semiconductor process equipment 10 may be used as the base of the cleaning component 20. FIG. 5 is a schematic diagram of the cleaning component 20 in some embodiments of the present application, FIG. 6 is a schematic diagram of the semiconductor process equipment 10 using the cleaning component 20 shown in FIG. 5, and FIG. 7 is a longitudinal cross-sectional schematic diagram of the semiconductor process equipment 10 installed with the cleaning component 20 in FIG. 6. In some embodiments, referring to FIG. 5-FIG. 7, the first housing 12 of the semiconductor process equipment 10 serves as the base of the cleaning component 20. A third fixing element 224 is provided at the lower edge of the turntable 22, and a fourth fixing element 121 is provided in the circumferential direction of the first housing 12. The turntable 22 is fixedly mounted on the first housing 12 by the third fixing element 224 and the fourth fixing element 121, and the first housing 12 rotates with the rotation of the turntable 22. The third fixing element 224 is one of a fixing column or a fixing hole, and the fourth fixing element 121 is the other of the fixing column or the fixing hole. The fixing hole can be a through hole or a blind hole, as long as it cooperates with the fixing column to fix the turntable 22 and the first housing 12 to each other.
参见图5-图7所示的实施例,当清洗组件20用于清洗半导体制程设备10时,转盘22可以与第一壳体12安装固定在一起,则转盘22可以带动第一壳体12一起转动,但上盖23保持固定不动。转盘22带动第一壳体12进行转动,使得清洗组件20对第一壳体12的外壁清洗更加充分和全面,清洗效果更好。Referring to the embodiment shown in FIGS. 5 to 7 , when the cleaning assembly 20 is used to clean the semiconductor process equipment 10, the turntable 22 can be fixedly mounted together with the first housing 12, and the turntable 22 can drive the first housing 12 to rotate together, but the upper cover 23 remains fixed. The turntable 22 drives the first housing 12 to rotate, so that the cleaning assembly 20 cleans the outer wall of the first housing 12 more fully and comprehensively, and the cleaning effect is better.
参见图2和图7,在一些实施例中,清洗组件20还包括检测组件14。检测组件14设置于第一壳体12和/或第二壳体13上,用于检测半导体制程设备10的脏污程度。通过检测组件14对半导体制程设备10的脏污程度进行检测,并根据检测到的脏污程度调用清洗组件20对收容腔100进行清洗,以实现对半导体制程设备10更及时的“主动”清洗。2 and 7 , in some embodiments, the cleaning component 20 further includes a detection component 14. The detection component 14 is disposed on the first housing 12 and/or the second housing 13, and is used to detect the degree of dirtiness of the semiconductor process equipment 10. The degree of dirtiness of the semiconductor process equipment 10 is detected by the detection component 14, and the cleaning component 20 is called to clean the receiving chamber 100 according to the detected degree of dirtiness, so as to achieve more timely "active" cleaning of the semiconductor process equipment 10.
在一些实施例中,第一壳体12远离第二壳体13的一侧设置有排气通道122,检测组件14设置于排气通道122内,用于对排气通道122的气流进行检测,以检测半导体制程设备10的脏污程度。In some embodiments, an exhaust passage 122 is disposed on a side of the first shell 12 away from the second shell 13 , and a detection component 14 is disposed in the exhaust passage 122 for detecting the airflow in the exhaust passage 122 to detect the degree of dirtiness of the semiconductor process equipment 10 .
其中,检测组件14可以是压力传感器或者气体流量传感器,且检测组件14用于对排气通道122的气体流量或者气流压力进行检测。随着收容腔100内涂胶残留物的增多,从排气通道122排出的气流(例如气体流量或者气流压力)会发生变化。通过检测组件14对通过排气通道122的气流进行检测,可以得到半导体制程设备10的脏污程度的检测结果,并根据该检测结果调用清洗组件20对收容腔100进行清洗,以实现更及时的“主动”清洗。The detection component 14 may be a pressure sensor or a gas flow sensor, and the detection component 14 is used to detect the gas flow or gas flow pressure of the exhaust channel 122. As the amount of glue residue in the receiving chamber 100 increases, the gas flow (such as gas flow or gas flow pressure) discharged from the exhaust channel 122 will change. By detecting the gas flow through the exhaust channel 122 through the detection component 14, the detection result of the dirtiness of the semiconductor process equipment 10 can be obtained, and the cleaning component 20 is called to clean the receiving chamber 100 according to the detection result, so as to achieve more timely "active" cleaning.
在一些实施例中,检测组件14还可以对第一壳体12和/或第二壳体13上附着的涂胶残留物的厚度进行检测,以检测半导体制程设备10的脏污程度。其中,检测组件14可以是例如激光传感器。In some embodiments, the detection component 14 can also detect the thickness of the glue residue attached to the first shell 12 and/or the second shell 13 to detect the degree of dirtiness of the semiconductor process equipment 10. The detection component 14 can be, for example, a laser sensor.
为解决上述技术问题,本申请一些实施例还提供一种清洗方法,应用于上述半导体制程设备10。图8为本申请一些实施例中的清洗方法的流程图。清洗方法包括如下步骤。To solve the above technical problems, some embodiments of the present application further provide a cleaning method, which is applied to the above semiconductor process equipment 10. Fig. 8 is a flow chart of the cleaning method in some embodiments of the present application. The cleaning method includes the following steps.
步骤S102,从收容腔内取出待加工元件。Step S102, taking out the component to be processed from the receiving cavity.
在一些实施例中,当使用半导体制程设备10进行半导体制程时,待加工元件可通过第二开口130承载于承载台11上,并收容于收容腔100内。当需要对半导体制程设备10进行清洗时,可以在待加工元件的半导体制程工艺结束后,将待加工元件从收容腔100内取出。In some embodiments, when the semiconductor process equipment 10 is used to perform semiconductor processes, the component to be processed can be carried on the carrier 11 through the second opening 130 and accommodated in the receiving chamber 100. When the semiconductor process equipment 10 needs to be cleaned, the component to be processed can be taken out of the receiving chamber 100 after the semiconductor process of the component to be processed is completed.
步骤S104,将清洗组件放入收容腔内,并启动清洗组件对半导体制程设备进行清洗。Step S104, placing the cleaning component into the receiving chamber, and starting the cleaning component to clean the semiconductor process equipment.
在一些实施例中,将清洗组件20从第二开口130处伸入收容腔100,并使清洗组件20位于第一壳体12的顶部。启动清洗组件20对半导体制程设备10进行清洗。可以理解的是,启动清洗组件20对半导体制程设备10进行清洗包括:通过输液管道向溶剂管道231注入清洗溶液;通过旋转驱动装置驱动旋转轴21旋转和/或通过平移驱动装置驱动清洗组件20整体沿平行旋转轴21的方向往复运动。其中,注入清洗溶液和调整清洗组件20沿平行旋转轴21的方向往复运动可以同步进行,也可以先注入清洗液后调整清洗组件20沿平行旋转轴21的方向往复运动。In some embodiments, the cleaning component 20 is extended into the receiving cavity 100 from the second opening 130, and the cleaning component 20 is located at the top of the first shell 12. The cleaning component 20 is started to clean the semiconductor process equipment 10. It can be understood that starting the cleaning component 20 to clean the semiconductor process equipment 10 includes: injecting a cleaning solution into the solvent pipeline 231 through an infusion pipeline; driving the rotating shaft 21 to rotate through a rotary drive device and/or driving the cleaning component 20 to reciprocate as a whole in a direction parallel to the rotating shaft 21 through a translation drive device. Injecting the cleaning solution and adjusting the cleaning component 20 to reciprocate in a direction parallel to the rotating shaft 21 can be performed simultaneously, or the cleaning solution can be injected first and then the cleaning component 20 can be adjusted to reciprocate in a direction parallel to the rotating shaft 21.
在一些实施例中,清洗方法还包括:在半导体制程设备的清洗完成后,取出清洗组件。In some embodiments, the cleaning method further includes: after the cleaning of the semiconductor process equipment is completed, removing the cleaning component.
清洗组件20完成对半导体制程设备10的清洗后,从半导体制程设备10中取出清洗组件20。在一些实施例中,可以设定预设时长。启动清洗组件20后,记录启动时间,并计算当前时间与启动时间之差作为清洗时长。当清洗时长达到预设时长时,表示半导体制程设备10清洗完成。其中,预设时长可以根据需要进行具体选择和调整,以适应不同的半导体制程设备10和不同的清洗要求。After the cleaning component 20 completes the cleaning of the semiconductor process equipment 10, the cleaning component 20 is removed from the semiconductor process equipment 10. In some embodiments, a preset duration can be set. After starting the cleaning component 20, the start time is recorded, and the difference between the current time and the start time is calculated as the cleaning duration. When the cleaning duration reaches the preset duration, it indicates that the semiconductor process equipment 10 is cleaned. Among them, the preset duration can be specifically selected and adjusted as needed to adapt to different semiconductor process equipment 10 and different cleaning requirements.
当然,在其他实施例中,在半导体制程设备的清洗完成后,也可以将清洗组件保留在收容腔100内不取出,例如可以移动到其他合适位置,只要不影响后续的半导体制程工艺即可。Of course, in other embodiments, after the semiconductor process equipment is cleaned, the cleaning assembly may be retained in the receiving chamber 100 and may be moved to other suitable locations, for example, as long as the subsequent semiconductor process technology is not affected.
在一些实施例中,清洗方法还包括:监测半导体制程设备的排气通道的实时压力值,并基于实时压力值调整预设时间间隔。其中,预设时间间隔为调用清洗组件对半导体制程设备进行清洗的时间间隔。In some embodiments, the cleaning method further comprises: monitoring the real-time pressure value of the exhaust channel of the semiconductor process equipment, and adjusting the preset time interval based on the real-time pressure value, wherein the preset time interval is the time interval for calling the cleaning component to clean the semiconductor process equipment.
半导体制程设备10预先设置有预设时间间隔,根据预设时间间隔调用清洗组件20对收容腔100进行清洗。其中,调用清洗组件20对半导体制程设备10进行清洗的过程可以包括上述步骤。预设时间间隔可以为12小时、24小时等,本申请在此不做具体限定。The semiconductor process equipment 10 is pre-set with a preset time interval, and the cleaning component 20 is called to clean the receiving chamber 100 according to the preset time interval. The process of calling the cleaning component 20 to clean the semiconductor process equipment 10 may include the above steps. The preset time interval may be 12 hours, 24 hours, etc., and the present application does not make specific limitations here.
随着收容腔100内涂胶残留物的增多,从排气通道122排出的气体的压力越大。因此,可以对排气通道122的气体压力进行监测。其中,半导体制程设备10的排气通道122内可以设置有检测组件14,检测组件14可以包括压力传感器,通过压力传感器对排气通道122的气体压力进行实时监测,以得到实时压力值。压力传感器可以每间隔1秒、1.5秒、2秒或者3秒检测一次压力值,得到实时压力值,间隔时长可以根据需要进行具体选择和调整,以适应不同的半导体制程设备10和不同的清洗要求,本申请在此不做限定。As the amount of glue residue in the receiving cavity 100 increases, the pressure of the gas exhausted from the exhaust channel 122 increases. Therefore, the gas pressure of the exhaust channel 122 can be monitored. Among them, a detection component 14 can be provided in the exhaust channel 122 of the semiconductor process equipment 10, and the detection component 14 can include a pressure sensor, and the gas pressure of the exhaust channel 122 is monitored in real time by the pressure sensor to obtain a real-time pressure value. The pressure sensor can detect the pressure value once every 1 second, 1.5 seconds, 2 seconds or 3 seconds to obtain a real-time pressure value. The interval time can be specifically selected and adjusted as needed to adapt to different semiconductor process equipment 10 and different cleaning requirements, and this application is not limited here.
在一些实施例中,检测组件14可以判断实时压力值是否超过预设压力值,响应于实时压力值超过预设压力值,缩短预设时间间隔。其中,预设压力值可以根据需要进行具体选择和调整,以适应不同的半导体制程设备10和不同的清洗要求,本申请在此不做具体限定。在一些实施例中,检测组件14可以计算实时压力值在预设时间段内的压力变化率,即压力增长斜率。判断压力增长斜率是否超过预设斜率,响应于压力增长斜率超过预设斜率,缩短预设时间间隔。其中,预设时间段和预设斜率均可以根据需要进行具体选择和调整,以适应不同的半导体制程设备10和不同的清洗要求,本申请在此不做具体限定。In some embodiments, the detection component 14 can determine whether the real-time pressure value exceeds the preset pressure value, and in response to the real-time pressure value exceeding the preset pressure value, shorten the preset time interval. Among them, the preset pressure value can be specifically selected and adjusted as needed to adapt to different semiconductor process equipment 10 and different cleaning requirements, and the present application does not make specific limitations here. In some embodiments, the detection component 14 can calculate the pressure change rate of the real-time pressure value within a preset time period, that is, the pressure growth slope. Determine whether the pressure growth slope exceeds the preset slope, and in response to the pressure growth slope exceeding the preset slope, shorten the preset time interval. Among them, the preset time period and the preset slope can be specifically selected and adjusted as needed to adapt to different semiconductor process equipment 10 and different cleaning requirements, and the present application does not make specific limitations here.
缩短预设时间间隔可以例如为,将原本12小时或24小时的预设时间间隔调整为8小时、6小时或者4小时,本申请在此不做具体限定。Shortening the preset time interval may be, for example, adjusting the original 12-hour or 24-hour preset time interval to 8 hours, 6 hours, or 4 hours, which is not specifically limited in the present application.
在一些实施例中,检测组件14可以每间隔预设时长判断一次实时压力值是否超过预设压力值,或者每间隔预设时长计算一次压力增长斜率并进行判断。其中,预设时长可以例如为1秒、30秒、1分钟、30分钟、1小时等,本申请在此不做具体限定。In some embodiments, the detection component 14 can determine whether the real-time pressure value exceeds the preset pressure value once every preset time interval, or calculate the pressure growth slope once every preset time interval and make a judgment. The preset time interval can be, for example, 1 second, 30 seconds, 1 minute, 30 minutes, 1 hour, etc., and this application does not make specific limitations here.
本申请一些实施例提供的清洗方法通过实时对排气通道122的压力值进行监测,能够实时监测收容腔100的脏污程度,从而根据脏污程度调整预设时间间隔,以增加清洗半导体制程设备10的频率,实现更及时的“主动”清洗,使得半导体制程设备10能够更好地维持在高效、高质的工作状态,降低第一壳体12和/或第二壳体13的更换频率,延长半导体制程设备10的使用寿命,尤其是第一壳体12和/或第二壳体13的使用寿命。The cleaning method provided in some embodiments of the present application can monitor the degree of dirtiness of the accommodating chamber 100 in real time by monitoring the pressure value of the exhaust channel 122 in real time, thereby adjusting the preset time interval according to the degree of dirtiness to increase the frequency of cleaning the semiconductor process equipment 10, and achieve more timely "active" cleaning, so that the semiconductor process equipment 10 can be better maintained in an efficient and high-quality working state, reduce the replacement frequency of the first shell 12 and/or the second shell 13, and extend the service life of the semiconductor process equipment 10, especially the service life of the first shell 12 and/or the second shell 13.
以上所述仅为本申请的实施方式,并非因此限制本申请的专利范围,凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本申请的专利保护范围内。The above description is only an implementation method of the present application, and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.
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