CN118398588A - Gold-silver alloy structure for semiconductor device and preparation method thereof - Google Patents
Gold-silver alloy structure for semiconductor device and preparation method thereof Download PDFInfo
- Publication number
- CN118398588A CN118398588A CN202410852249.9A CN202410852249A CN118398588A CN 118398588 A CN118398588 A CN 118398588A CN 202410852249 A CN202410852249 A CN 202410852249A CN 118398588 A CN118398588 A CN 118398588A
- Authority
- CN
- China
- Prior art keywords
- gold
- silver
- silver alloy
- electroplating
- bump
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910001316 Ag alloy Inorganic materials 0.000 title claims abstract description 109
- PQTCMBYFWMFIGM-UHFFFAOYSA-N gold silver Chemical compound [Ag].[Au] PQTCMBYFWMFIGM-UHFFFAOYSA-N 0.000 title claims abstract description 104
- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 238000002360 preparation method Methods 0.000 title abstract description 20
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 113
- 239000010931 gold Substances 0.000 claims abstract description 111
- 229910052737 gold Inorganic materials 0.000 claims abstract description 101
- 238000009713 electroplating Methods 0.000 claims abstract description 87
- 229910052709 silver Inorganic materials 0.000 claims abstract description 68
- 239000004332 silver Substances 0.000 claims abstract description 68
- 238000005530 etching Methods 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 34
- 238000007747 plating Methods 0.000 claims abstract description 28
- 239000010410 layer Substances 0.000 claims description 68
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 65
- 229920002120 photoresistant polymer Polymers 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 13
- 229910001020 Au alloy Inorganic materials 0.000 claims description 11
- 238000000137 annealing Methods 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 8
- YIROYDNZEPTFOL-UHFFFAOYSA-N 5,5-Dimethylhydantoin Chemical compound CC1(C)NC(=O)NC1=O YIROYDNZEPTFOL-UHFFFAOYSA-N 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000872 buffer Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- VMAQYKGITHDWKL-UHFFFAOYSA-N 5-methylimidazolidine-2,4-dione Chemical compound CC1NC(=O)NC1=O VMAQYKGITHDWKL-UHFFFAOYSA-N 0.000 claims description 6
- 239000012790 adhesive layer Substances 0.000 claims description 6
- WJRBRSLFGCUECM-UHFFFAOYSA-N hydantoin Chemical compound O=C1CNC(=O)N1 WJRBRSLFGCUECM-UHFFFAOYSA-N 0.000 claims description 6
- 229940091173 hydantoin Drugs 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- NBSJJUUNMKEGCH-UHFFFAOYSA-N 3,5-diethylimidazolidine-2,4-dione Chemical compound CCC1NC(=O)N(CC)C1=O NBSJJUUNMKEGCH-UHFFFAOYSA-N 0.000 claims description 5
- SIQZJFKTROUNPI-UHFFFAOYSA-N 1-(hydroxymethyl)-5,5-dimethylhydantoin Chemical compound CC1(C)N(CO)C(=O)NC1=O SIQZJFKTROUNPI-UHFFFAOYSA-N 0.000 claims description 4
- PBNUQCWZHRMSMS-UHFFFAOYSA-N 5-propan-2-ylimidazolidine-2,4-dione Chemical compound CC(C)C1NC(=O)NC1=O PBNUQCWZHRMSMS-UHFFFAOYSA-N 0.000 claims description 4
- BIFASJFFCIDWDC-UHFFFAOYSA-N 5-propylimidazolidine-2,4-dione Chemical compound CCCC1NC(=O)NC1=O BIFASJFFCIDWDC-UHFFFAOYSA-N 0.000 claims description 4
- 229910021538 borax Inorganic materials 0.000 claims description 4
- 239000004327 boric acid Substances 0.000 claims description 4
- 235000010338 boric acid Nutrition 0.000 claims description 4
- UQGFMSUEHSUPRD-UHFFFAOYSA-N disodium;3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane Chemical compound [Na+].[Na+].O1B([O-])OB2OB([O-])OB1O2 UQGFMSUEHSUPRD-UHFFFAOYSA-N 0.000 claims description 4
- 150000001469 hydantoins Chemical class 0.000 claims description 4
- HKSGQTYSSZOJOA-UHFFFAOYSA-N potassium argentocyanide Chemical compound [K+].[Ag+].N#[C-].N#[C-] HKSGQTYSSZOJOA-UHFFFAOYSA-N 0.000 claims description 4
- XTFKWYDMKGAZKK-UHFFFAOYSA-N potassium;gold(1+);dicyanide Chemical compound [K+].[Au+].N#[C-].N#[C-] XTFKWYDMKGAZKK-UHFFFAOYSA-N 0.000 claims description 4
- 239000004328 sodium tetraborate Substances 0.000 claims description 4
- 235000010339 sodium tetraborate Nutrition 0.000 claims description 4
- PFMQQZWCUJLKPU-UHFFFAOYSA-N 3,5,5-trimethylimidazolidine-2,4-dione Chemical compound CN1C(=O)NC(C)(C)C1=O PFMQQZWCUJLKPU-UHFFFAOYSA-N 0.000 claims description 3
- ZAWHTJSDBGTWTD-UHFFFAOYSA-N 5,5-diethyl-3-methylimidazolidine-2,4-dione Chemical compound CCC1(CC)NC(=O)N(C)C1=O ZAWHTJSDBGTWTD-UHFFFAOYSA-N 0.000 claims description 3
- XHPQMYVMTQWHGY-UHFFFAOYSA-N 5-ethyl-3-methylimidazolidine-2,4-dione Chemical compound CCC1NC(=O)N(C)C1=O XHPQMYVMTQWHGY-UHFFFAOYSA-N 0.000 claims description 3
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 3
- 229910019142 PO4 Inorganic materials 0.000 claims description 3
- 229940053195 antiepileptics hydantoin derivative Drugs 0.000 claims description 3
- 125000005619 boric acid group Chemical group 0.000 claims description 3
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 claims description 3
- 235000011180 diphosphates Nutrition 0.000 claims description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 3
- 239000010452 phosphate Substances 0.000 claims description 3
- 235000021317 phosphate Nutrition 0.000 claims description 3
- 229940095064 tartrate Drugs 0.000 claims description 3
- ILJSQTXMGCGYMG-UHFFFAOYSA-N triacetic acid Chemical compound CC(=O)CC(=O)CC(O)=O ILJSQTXMGCGYMG-UHFFFAOYSA-N 0.000 claims description 3
- BAERPNBPLZWCES-UHFFFAOYSA-N (2-hydroxy-1-phosphonoethyl)phosphonic acid Chemical compound OCC(P(O)(O)=O)P(O)(O)=O BAERPNBPLZWCES-UHFFFAOYSA-N 0.000 claims description 2
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 claims description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 2
- JTPLPDIKCDKODU-UHFFFAOYSA-N acetic acid;2-(2-aminoethylamino)ethanol Chemical compound CC(O)=O.CC(O)=O.CC(O)=O.NCCNCCO JTPLPDIKCDKODU-UHFFFAOYSA-N 0.000 claims description 2
- 229940001468 citrate Drugs 0.000 claims description 2
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 claims description 2
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 claims description 2
- FDGBQHCDMSYZRC-UHFFFAOYSA-N 2-hydroxy-2-oxo-1,3,2$l^{5}-dioxaphosphinan-4-amine Chemical compound NC1CCOP(O)(=O)O1 FDGBQHCDMSYZRC-UHFFFAOYSA-N 0.000 claims 2
- 239000003795 chemical substances by application Substances 0.000 claims 2
- VPTUPAVOBUEXMZ-UHFFFAOYSA-N (1-hydroxy-2-phosphonoethyl)phosphonic acid Chemical compound OP(=O)(O)C(O)CP(O)(O)=O VPTUPAVOBUEXMZ-UHFFFAOYSA-N 0.000 claims 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims 1
- 229940071106 ethylenediaminetetraacetate Drugs 0.000 claims 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 3
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 229910000679 solder Inorganic materials 0.000 description 10
- 239000011241 protective layer Substances 0.000 description 6
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000005987 sulfurization reaction Methods 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical compound [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000006172 buffering agent Substances 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011859 microparticle Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- SDKPSXWGRWWLKR-UHFFFAOYSA-M sodium;9,10-dioxoanthracene-1-sulfonate Chemical compound [Na+].O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2S(=O)(=O)[O-] SDKPSXWGRWWLKR-UHFFFAOYSA-M 0.000 description 2
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical group [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- IAANMKMHMYZVOC-UHFFFAOYSA-N aminomethyl dihydrogen phosphate Chemical compound NCOP(O)(O)=O IAANMKMHMYZVOC-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940009662 edetate Drugs 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000005325 percolation Methods 0.000 description 1
- RYIOLWQRQXDECZ-UHFFFAOYSA-N phosphinous acid Chemical compound PO RYIOLWQRQXDECZ-UHFFFAOYSA-N 0.000 description 1
- 229940048084 pyrophosphate Drugs 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- -1 silver ions Chemical class 0.000 description 1
- FQENQNTWSFEDLI-UHFFFAOYSA-J sodium diphosphate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]P([O-])(=O)OP([O-])([O-])=O FQENQNTWSFEDLI-UHFFFAOYSA-J 0.000 description 1
- 229940048086 sodium pyrophosphate Drugs 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005486 sulfidation Methods 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 235000019818 tetrasodium diphosphate Nutrition 0.000 description 1
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
Landscapes
- Electroplating Methods And Accessories (AREA)
Abstract
The invention discloses a gold-silver alloy structure for a semiconductor device and a preparation method thereof, and belongs to the technical field of semiconductor device preparation. The gold-silver alloy structure is characterized in that a gold-silver alloy bump is arranged as a main body of the gold-silver alloy structure, and a porous gold layer is arranged on the surface of the gold-silver alloy bump. After the gold-silver alloy bump is prepared by electroplating, the same electroplating solution or etching solution is used for reverse electroplating, silver on the surface of the gold-silver alloy bump is etched, and a porous gold layer is formed on the surface of the gold-silver alloy bump, so that the technical problem that silver in the gold-silver alloy bump is easy to oxidize or sulfide is solved, and the gold-silver alloy is used for replacing pure gold in a semiconductor device. The invention does not need to add new electroplating equipment or chemical plating equipment, and has simple process and easy realization.
Description
Technical Field
The invention belongs to the field of semiconductor device preparation, and particularly relates to a gold-silver alloy structure for a semiconductor device and a preparation method thereof.
Background
As the price of gold continues to rise, manufacturing costs are facing great pressure for scenes in which the amount of gold used in semiconductor devices is large, such as liquid crystal driving chips, memory chips, or compound semiconductor chips. The gold-silver alloy is used for replacing pure gold for the bumps of the packaged chip, but when the gold content in the gold-silver bump is low, the oxidation resistance or the sulfuration resistance of the gold-silver alloy surface is insufficient, and in the subsequent flip-chip process, when the gold-silver bump is required to be bonded with a copper circuit of a flexible circuit board (FPC) through tin or gold micro particles in anisotropic conductive Adhesive (ACF), poor bonding is caused by oxidation or sulfuration of silver. Therefore, the gold-silver alloy is used for replacing pure gold, and the problem of insufficient oxidation resistance or sulfuration resistance of silver in the gold-silver alloy is urgently needed to be solved. Particularly at the top surface of the bump, i.e. at the location of the bonding interface, it is particularly desirable to avoid oxidation or sulfidation of silver.
In order to solve the problem of cost rise faced by the semiconductor device with continuously rising gold price, the prior art adopts various technical schemes to realize that gold-silver alloy is used for replacing pure gold so as to reduce the cost. TWI469288B mentions that the plating of gold and silver bumps, in order to prevent the problem of oxidation of silver, oxidation of silver is prevented by plating or electroless plating of one of gold, palladium, copper or nickel on the top or side of the gold and silver bump, but copper or nickel is more easily oxidized than silver. TW201044527A mentions that the plated gold-silver bump contains not less than 80% of silver content, and then a protective layer is formed on the gold-silver surface by substituting gold or reducing gold to prevent oxidation of silver. TW201019440A mentions that the material of the silver bump can be selected from pure silver or silver alloy, the silver alloy system of the silver bump can contain not less than 80% of silver content, and then a layer of pure gold or gold alloy is plated on the surface of the silver alloy to solve the problem of oxidation resistance. In the above operation, since the protective layer uses components different from gold-silver alloy electroplating, another plating tank needs to be added to contain different liquid medicines to realize the preparation of the protective layer in practical operation, which clearly increases the complexity of the process and the investment cost of the production line.
In order to solve the problem of complex process, through a great deal of researches, CN117542818B discovers that the oxidation resistance or sulfuration resistance of silver in the gold-silver bump can be obviously improved by enabling the gold content in the gold-silver bump to be more than 60%. Specifically, the same gold-silver alloy plating solution is used in the same plating bath, gold-silver alloy bodies with gold content of 20% -50% are prepared through low-current density plating to serve as connecting layers, the plating layer height is 7-20 mu m, then a protective layer with gold content of more than 60% is prepared through high-current density plating, and the protective layer height is 10-500 nm. The gold and silver bump structure can be prepared by using the same electroplating solution in the same plating tank only through current density, so that the process is greatly simplified and the equipment investment is reduced.
US5773897a discloses a flip chip structure comprising a monolithic microwave integrated circuit formed on a module substrate and mounted on a component substrate, the module substrate further comprising a plurality of solder bumps for securing the module substrate to the component substrate, the solder bumps comprising electroplated silver pillars having a first diameter and being covered with electroplated solder (tin-lead solder) having a second diameter, wherein the second diameter is greater than the first diameter (about 25-50 μm), wherein the solder is also for preventing oxidation of silver. However, if the solder diameter is large, short circuits between adjacent bumps are likely to occur during the thermocompression process.
As can be seen from the above analysis of the prior art, in order to solve the technical problem that silver in the gold-silver alloy is easily oxidized or sulfidized, three solutions are adopted in the prior art: firstly, a layer of gold or alloy is electroplated on the surface of gold and silver as a protective layer, and a new pure gold electroplating bath or chemical plating is required to be added besides a gold and silver alloy electroplating bath, so that the complexity of the process and the equipment investment are increased. Second, CN117542818B uses the same electroplating solution, and gold and silver bumps with different gold contents are prepared by controlling the current density, and the top surface of the bump contains gold and silver alloy with gold content of 60% or more, but silver may be oxidized after the gold and silver alloy is placed for a long time. Thirdly, the solder is used for protecting the top surface of the gold-silver bump, but the solder is easy to flow at high temperature, so that the solder is not suitable for preparing fine lines, the spacing between the bumps of the liquid crystal driving chip which is advanced at present is reduced to be less than 10 mu m, and the technical scheme of solder protection is not suitable; secondly, considering that silver tin forms an alloy or intermetallic compound, a plate may be formed to cause short circuits between bumps.
A gold-silver alloy structure for a semiconductor device and a preparation method thereof are urgently needed, the technical problem that silver in gold-silver alloy bumps is easy to oxidize or sulfide is solved, the gold-silver alloy is used for replacing pure gold for the semiconductor device, and meanwhile, the process is simple and easy to realize.
Disclosure of Invention
The invention aims to provide a gold-silver alloy structure for a semiconductor device and a preparation method thereof, and the inventor, through intensive research, invents a simple and practical process method according to the material property of gold-silver alloy, and after the gold-silver alloy bump is prepared by electroplating, the silver on the surface of the gold-silver alloy bump is etched by using the same electroplating solution or using etching solution (the main difference between the etching solution and the electroplating solution is that no gold salt and no silver salt are contained) in reverse electroplating, and a porous gold layer is formed on the surface of the gold-silver alloy bump, so that the technical problem that the silver in the gold-silver alloy bump is easy to oxidize or sulfide is solved, and the purpose that gold-silver alloy is used for replacing pure gold in the semiconductor device is realized.
The primary aspect of the invention is to provide a gold-silver alloy structure for a semiconductor device, wherein the gold-silver alloy structure is composed of gold-silver alloy bumps, and a porous gold layer is arranged on the surface of each gold-silver alloy bump. By forming the porous gold layer on the surface of the gold-silver alloy bump, the porous gold layer and the gold-silver alloy bump form a laminated structure (the porous gold layer is positioned on the top surface of the gold-silver alloy bump) or a surrounding structure (the porous gold layer is positioned on the top surface and the side surface of the gold-silver alloy bump), and the porous gold layer does not contain silver, so that the problem that silver is easy to oxidize or sulfide is avoided. Because only porous gold is formed on the surface, the bump body is made of gold-silver alloy material, on one hand, the gold-silver alloy is realized to replace pure gold, and on the other hand, the hardness of the whole bump (the hardness is equivalent to that of the pure gold bump) is not changed. In the bonding process, the porous gold on the top surface of the bump can deform to cover the material below, so that even if silver in the gold-silver alloy bump body below the porous gold is oxidized or vulcanized, the bonding quality of the porous gold and tin or gold microparticles in the ACF can not be influenced.
Further, the gold-silver alloy bump is obtained by adopting an electroplating method; the porous gold layer is obtained after silver is removed on the surface of the gold-silver alloy bump by reverse electroplating. The reverse electroplating of the invention refers to electroplating in the opposite current direction to that of preparing gold-silver alloy bumps. The method for removing silver by reverse electroplating and etching provided by the invention has the advantages of simple process and easiness in realization, and is specifically embodied in: the electroplating equipment is not required to be replaced, and only the electroplating current direction is required to be changed; the same electroplating solution can be used for reverse electroplating, and etching solution can be used for reverse electroplating, wherein the etching solution is mainly different from the electroplating solution in that the etching solution does not contain gold salt and silver salt, and the preparation process of the etching solution is similar to that of the electroplating solution.
It should be noted that although there are various methods for etching silver, there are chemical etching methods in addition to reverse plating provided by the present invention, for example Lothar et al (Proceedings-Electronic Components and Technology Conference, 2022, 873-882) have reported etching silver in gold-silver alloys using nitric acid to form porous gold structures. However, the chemical etching method has the following defects that gold-silver alloy bumps are not suitable for semiconductors because semiconductor devices contain many materials, such as TiW adhesion layers, aluminum electrodes, silicon substrates, silicon dioxide or silicon nitride passivation layers, which are easily corroded by nitric acid. The invention only forms a very thin porous gold layer on the surface of the gold-silver bump by reverse electroplating and etching, thereby not only meeting the hardness requirement of gold-silver bump package, but also ensuring the reliability of subsequent bonding through the porous gold layer; meanwhile, the reverse electroplating method is the same as the method for preparing the gold-silver alloy bump main body, but the current direction is opposite, so that other materials on the semiconductor device are not damaged.
Further, the height of the gold-silver alloy bump is 7-20 μm, and the thickness of the porous gold layer is 0.02-2.0 μm. It should be noted that the thickness of the porous gold layer is the thickness of the porous gold layer on the top surface or side of the final semiconductor device product. In the process of preparing the semiconductor device product, when the seed layer is etched, particularly when the seed layer is gold, the porous gold is etched by the etching seed layer, so that the thickness of the porous gold is properly thicker when the porous gold is obtained by reverse electroplating, and the etching loss amount is reserved when the seed layer is etched.
A further aspect of the present invention provides a method of preparing a gold-silver alloy structure for a semiconductor device including a substrate, an electrode, a seed layer, an adhesion layer, and a photoresist, the method comprising the steps of:
S1, preparing gold and silver electroplating solution, and placing a semiconductor device in the electroplating solution for electroplating to obtain gold and silver alloy bumps;
s2, using the same electroplating equipment, using the gold and silver electroplating solution or the etching solution in the step S1, changing the current direction to perform reverse electroplating on the semiconductor device, and removing silver components in the alloy on the top surface of the bump, so as to form a porous gold layer on the top surface of the bump;
S3, photoresist is removed by using a photoresist removing solution;
S4, removing the seed layer;
s5, removing the adhesive layer;
S6, annealing the gold-silver alloy bump.
The preparation method finally obtains the gold-silver alloy bump with the laminated structure, firstly, the gold-silver alloy bump is electroplated, photoresist is not removed, then silver on the top surface of the bump is removed through reverse electroplating to form porous gold, the side wall is unchanged due to the protection of the photoresist, and then the photoresist, the seed layer and the adhesive layer are removed, so that the gold-silver alloy bump with the laminated structure on the top surface of the porous gold is formed. By adjusting the annealing time and the annealing temperature, the hardness of the gold-silver alloy bump can meet the packaging requirement.
Further, the electroplating temperature in the step S1 is 20-60 ℃, the current density is 0.3-1.0A/dm 2 (ASD), and the electroplating time is 10-60 min; the electroplating temperature in the step S2 is 20-60 ℃, the current density is 0.01-10A/dm 2, and the electroplating time is 0.5-5 min.
A further aspect of the present invention is to provide another method for manufacturing a gold-silver alloy structure for a semiconductor device including a substrate, an electrode, a seed layer, an adhesion layer, and a photoresist, the method comprising the steps of:
S1, preparing gold and silver electroplating solution, and placing a semiconductor device in the electroplating solution for electroplating to obtain gold and silver alloy bumps;
s2, photoresist is removed by using a photoresist removing solution;
S3, using the same electroplating equipment, using the gold and silver electroplating solution or the etching solution in the step S1, changing the current direction to perform reverse electroplating on the semiconductor device, and removing silver components in the alloy on the top surface and the side surface of the bump, so as to form a porous gold layer on the top surface and the side surface of the bump;
S4, removing the seed layer;
s5, removing the adhesive layer;
S6, annealing the gold-silver alloy bump.
The preparation method finally obtains the gold-silver alloy bump with the surrounding structure, firstly electroplating gold-silver alloy, removing photoresist, then removing silver on the top surface and the side surface of the bump by reverse electroplating, thereby forming a porous gold layer on the top surface and the side surface of the bump, and then removing the seed layer and the adhesive layer, thereby forming the gold-silver alloy main body-porous gold top surface and the side surface of the surrounding structure bump. By adjusting the annealing time and the annealing temperature, the hardness of the gold-silver alloy bump can meet the packaging requirement.
Further, the electroplating temperature in the step S1 is 20-60 ℃, the current density is 0.3-1.0A/dm 2, and the electroplating time is 10-60 min; the electroplating temperature in the step S3 is 20-60 ℃, the current density is 0.01-10A/dm 2, and the electroplating time is 0.5-5 min.
Further, in the two preparation methods, the gold and silver electroplating solution comprises 8-15 g/L of potassium gold cyanide (formula KAu (CN) 2), 2-6 g/L of silver potassium cyanide (formula KAg (CN) 2), 1-100 g/L of hydantoin or derivatives thereof, and 10-100 g/L of buffer, wherein the pH of the gold and silver electroplating solution is 8-11, the hydantoin derivatives comprise 5, 5-dimethylhydantoin, 5-methylhydantoin, 3, 5-trimethylhydantoin, 3-methyl-5-ethylhydantoin, 3-methyl-5, 5-diethylhydantoin, 3, 5-triethylhydantoin, 3, 5-diethylhydantoin, 5-propylhydantoin, 5-isopropylhydantoin, 1- (hydroxymethyl) -5, 5-dimethylhydantoin, and the buffer is selected from boric acid, sodium tetraborate, sodium pyrophosphate, hydroxyphosphine, triethylenediamine, triacetate, triethylenediamine, or triethylenediamine acetate.
Further, in the two preparation methods, the etching solution comprises 1-100 g/L of hydantoin or derivatives thereof and 10-100 g/L of buffer, the pH of the etching solution is 8-11, the hydantoin derivatives comprise one or more of 5, 5-dimethylhydantoin, 5-methylhydantoin, 3, 5-trimethylhydantoin, 3-methyl-5-ethylhydantoin, 3-methyl-5, 5-diethylhydantoin, 3, 5-triethylhydantoin, 3, 5-diethylhydantoin, 5-propylhydantoin, 5-isopropylhydantoin, 1- (hydroxymethyl) -5, 5-dimethylhydantoin, and the buffer is selected from boric acid, sodium tetraborate, phosphate, pyrophosphate, hydroxyethylidene diphosphonic acid, aminomethylphosphoric acid, tartrate, citrate, edetate, N-hydroxyethylethylenediamine triacetate, nitrilotriacetate or iminodiacetic acid.
Hydantoin and its derivatives are contained in an amount of 1 to 100 g/L, and if it is less than 1g/L, the plating solution or etching solution needs to be replaced frequently, and if it is more than 100 g/L, the solution viscosity may be too high to affect plating or etching uniformity. The content of the buffering agent is 10-100 g/L, and the buffering agent not only keeps the pH value stable, but also plays a role of conductive salt. The pH of the electroplating solution or the etching solution is 8-11, which considers that the pKa of the 5, 5-dimethylhydantoin is 8.1, so that the 5, 5-dimethylhydantoin can only form ionic complex electrolytic silver ions above pH8, and the swelling or the percolation plating of the photoresist can be caused by too high pH.
Another aspect of the present invention is to provide a gold-silver alloy structure obtained according to the above-described production method.
The invention has the following beneficial technical effects: the invention solves the problem that the surface of the gold-silver alloy bump is easy to oxidize or vulcanize, thereby ensuring the electrical interconnection reliability of the flip chip; the method provided by the invention does not need to add new electroplating equipment or chemical plating equipment, and has simple process and easy realization.
Drawings
FIG. 1 is a flow chart of a preparation method of a gold-silver alloy bump with a laminated structure.
Fig. 2 is a process flow of a preparation method of a gold-silver alloy bump with a surrounding structure.
Fig. 3a and 3b are SEM photographs of the top surface of the gold-silver alloy bump obtained in example 1, and fig. 3c is a SEM photograph of a tangential plane of the gold-silver alloy bump obtained in example 1.
Fig. 4a and 4b are SEM photographs of the top surface of the gold-silver alloy bump obtained in example 2, and fig. 4c is a SEM photograph of a tangential plane of the gold-silver alloy bump obtained in example 2.
FIG. 5 is an electrochemical graph of etching of gold or silver electrodes, respectively, by the etching solution of example 2.
Reference numerals: 101-substrate, 102-electrode, 103-passivation layer, 104-adhesion layer, 105-seed layer, 106-photoresist, 107-gold-silver alloy bump, 108-porous gold layer.
Detailed Description
The technical scheme of the invention is clearly and completely described below with reference to the attached drawings. It will be apparent that the described embodiments are only some, but not all, of the embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, are intended to fall within the scope of the present invention.
Example 1
The embodiment provides a gold-silver alloy bump with a laminated structure and a preparation method thereof, wherein the flow of the preparation method is shown in figure 1, and the specific steps are as follows.
S1, preparing gold and silver electroplating solution, and placing a semiconductor device in the electroplating solution for electroplating, wherein the semiconductor device comprises a substrate 101, an electrode 102, a passivation layer 103, an adhesion layer 104, a seed layer 105 and a photoresist 106, so as to obtain a gold and silver alloy bump 107. The plating solution contained 12 g/L of potassium gold cyanide, 4 g/L of potassium silver cyanide, 60 g/L of potassium pyrophosphate, 20 g/L of hydantoin, and a pH of 9. The electroplating temperature was 45 ℃, the current density was 0.8 ASD, and the electroplating time was 20min. The gold-silver alloy bump 107 had a height of 10 μm, a gold content of 40 wt%, and a roughness Ra of 71 nm.
S2, using the same electroplating equipment, electroplating by using the gold and silver electroplating solution in the step S1, changing the current direction, and forming a porous gold layer 108 on the top surface of the gold and silver alloy bump 107. The plating temperature was 30 ℃, the current density was 0.2 ASD, and the plating time was 1 min.
S3 photoresist 106 is removed using NMP (N-methylpyrrolidone) as a photoresist removal solution.
S4 removes the copper seed layer 105 using H 2O2 at a mass concentration of 30%.
S5 removes TiW adhesion layer 104 using H 2O2 at a mass concentration of 30%.
S6, annealing the gold-silver alloy bump 107.
By observing the morphology of the porous gold layer using a scanning electron microscope, fig. 3a and 3b are SEM photographs of the top surface of the gold and silver bump at 1 thousand times and 1 ten thousand times, respectively, and fig. 3c is a slice photograph of the gold and silver bump, it is apparent that a nano-pore structure (porous gold layer) is formed on the surface of the bump, because the thickness of the porous gold layer is about 1.45 μm as a result of removing silver from the surface.
Example 2
The embodiment provides a gold-silver alloy bump with a surrounding structure and a preparation method thereof, wherein the flow of the preparation method is shown in figure 2, and the specific steps are as follows.
S1, preparing gold and silver electroplating solution, and placing a semiconductor device in the electroplating solution for electroplating, wherein the semiconductor device comprises a substrate 101, an electrode 102, a passivation layer 103, an adhesion layer 104, a seed layer 105 and a photoresist 106, so as to obtain a gold and silver alloy bump 107. The plating solution contained 12 g/L of potassium gold cyanide, 4 g/L of potassium silver cyanide, 60 g/L of potassium pyrophosphate, 40 g/L of 5, 5-dimethylhydantoin, and a pH of 9. The electroplating temperature is 45 ℃, the current density is 0.4 ASD, and the electroplating time is 45min. The gold-silver alloy bump 107 had a height of 10 μm, a gold content of 25 wt%, and a roughness Ra of 61 nm.
S2 removes the photoresist 106 using NMP as a photoresist removal solution.
S3, reverse electroplating is carried out on the semiconductor device by using etching liquid, and silver components in the alloy on the top surface and the side surface of the gold-silver alloy bump 107 are removed, so that a porous gold layer 108 is formed on the top surface and the side surface of the gold-silver alloy bump 107. The etching solution comprises 60 g/L of 5, 5-dimethylhydantoin and 30 g/L of potassium pyrophosphate, and the pH value is 10. The plating temperature was 30 ℃, the current density was 0.2 ASD, and the plating time was 1 min.
S4, removing the gold seed layer 105 by using an etching solution of thiourea system.
S5 removes TiW adhesion layer 104 using H 2O2 at a mass concentration of 30%.
S6, annealing the gold-silver alloy bump 107.
By observing the morphology of the porous gold layer using a scanning electron microscope, fig. 4a and 4b are SEM photographs of the top surface of the gold and silver bump at 1 thousand times and 1 ten thousand times, respectively, and fig. 4c is a slice photograph of the gold and silver bump, it is apparent that a nano-pore structure (porous gold layer) is formed on the bump surface, because the thickness of the porous gold layer is about 1.62 μm as a result of silver removal. In comparison with example 1, the nano-pore structure formed in example 2 is more apparent because the gold content of the gold-silver alloy of example 1 is 40wt% and the gold content of example 2 is only 25 wt%. Further, it should be noted that the hole-like structure of the side wall etching in example 2 is less pronounced, probably because the surface is closer to the cathode than the side wall, resulting in a stronger electric field at the surface than the side wall. The etching of the side wall can be made more obvious by changing the distribution of the electric field or enhancing the flow of the etching liquid.
Fig. 5 compares the etching effect of the etching liquid on the gold electrode and the silver electrode, and it can be seen that there is substantially no dissolution of the gold electrode, the silver electrode dissolves out from 0.15V, and the current density increases with the increase of the voltage. This means that the silver on the surface of the gold-silver alloy can be selectively etched by controlling the current density or voltage, thereby forming a porous gold structure.
Although embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that variations, modifications, alternatives, and variations may be made in the above embodiments by those skilled in the art without departing from the spirit and principles of the invention. The protection scope of the present invention is defined by the claims and the equivalents thereof.
Claims (11)
1. A gold-silver alloy structure for semiconductor device is composed of gold-silver alloy bump with porous gold layer on its surface.
2. The gold-silver alloy structure of claim 1, wherein the porous gold layer is located on a top surface of the gold-silver alloy bump or on a top surface and a side surface of the gold-silver alloy bump.
3. The gold-silver alloy structure according to claim 1, wherein the gold-silver alloy bumps are obtained by an electroplating method; the porous gold layer is obtained after silver is removed on the surface of the gold-silver alloy bump by reverse electroplating.
4. The gold-silver alloy structure according to claim 1, wherein the height of the gold-silver alloy bump is 7-20 μm, and the thickness of the porous gold layer is 0.02-2.0 μm.
5. A method of fabricating a gold-silver alloy structure for a semiconductor device comprising a substrate, an electrode, a seed layer, an adhesion layer, and a photoresist, the method comprising the steps of:
S1, preparing gold and silver electroplating solution, and placing a semiconductor device in the electroplating solution for electroplating to obtain gold and silver alloy bumps;
s2, using the same electroplating equipment, using the gold and silver electroplating solution or the etching solution in the step S1, changing the current direction to perform reverse electroplating on the semiconductor device, and removing silver components in the alloy on the top surface of the bump, so as to form a porous gold layer on the top surface of the bump;
S3, photoresist is removed by using a photoresist removing solution;
S4, removing the seed layer;
s5, removing the adhesive layer;
S6, annealing the gold-silver alloy bump.
6. The method according to claim 5, wherein the plating temperature in step S1 is 20-60 ℃, the current density is 0.3-1.0A/dm 2, and the plating time is 10-60 min; the electroplating temperature in the step S2 is 20-60 ℃, the current density is 0.01-10A/dm 2, and the electroplating time is 0.5-5 min.
7. A method of fabricating a gold-silver alloy structure for a semiconductor device comprising a substrate, an electrode, a seed layer, an adhesion layer, and a photoresist, the method comprising the steps of:
S1, preparing gold and silver electroplating solution, and placing a semiconductor device in the electroplating solution for electroplating to obtain gold and silver alloy bumps;
s2, photoresist is removed by using a photoresist removing solution;
S3, using the same electroplating equipment, using the gold and silver electroplating solution or the etching solution in the step S1, changing the current direction to perform reverse electroplating on the semiconductor device, and removing silver components in the alloy on the top surface and the side surface of the bump, so as to form a porous gold layer on the top surface and the side surface of the bump;
S4, removing the seed layer;
s5, removing the adhesive layer;
S6, annealing the gold-silver alloy bump.
8. The method according to claim 7, wherein the plating temperature in step S1 is 20-60 ℃, the current density is 0.3-1.0A/dm 2, and the plating time is 10-60 min; the electroplating temperature in the step S3 is 20-60 ℃, the current density is 0.01-10A/dm 2, and the electroplating time is 0.5-5 min.
9. The method according to claim 5 or 7, wherein the gold and silver plating solution comprises 8-15 g/L of potassium gold cyanide, 2-6 g/L of potassium silver cyanide, 1-100 g/L of hydantoin or derivatives thereof, and 10-100 g/L of buffer agent, the gold and silver plating solution has a pH of 8-11, and the hydantoin derivatives comprise 5, 5-dimethylhydantoin, 5-methylhydantoin, 3, 5-trimethylhydantoin, 3-methyl-5-ethylhydantoin, 3-methyl-5, 5-diethylhydantoin, 3, 5-triethylhydantoin, 3, 5-diethylhydantoin, 5-propylhydantoin, 5-isopropylhydantoin, 1- (hydroxymethyl) -5, 5-dimethylhydantoin, and the buffer agent is selected from boric acid, sodium tetraborate, phosphate, pyrophosphate, hydroxyethylidene diphosphonic acid, aminotrimethylene phosphate, tartrate, ethylenediamine, N-diethylenetriamine, triacetate, or a triacetic acid salt.
10. The method according to claim 5 or 7, wherein the etching liquid comprises 1-100 g/L of hydantoin or its derivative, 10-100 g/L of buffer, the pH of the etching liquid is 8-11, the hydantoin derivative comprises one or more selected from boric acid, sodium tetraborate, phosphate, pyrophosphate, hydroxylethylenediphosphonic acid, aminotrimethylene phosphate, tartrate, citrate, ethylenediamine tetraacetate, N-hydroxyethylethylenediamine triacetate, nitrilotriacetate or iminodiacetic acid, and 3, 5-diethylhydantoin, 3, 5-triethylhydantoin, 3, 5-diethylhydantoin, 5-propylhydantoin, 5-isopropylhydantoin, 1- (hydroxymethyl) -5, 5-dimethylhydantoin.
11. A gold-silver alloy structure obtained by the production method according to any one of claims 5 to 10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410852249.9A CN118398588A (en) | 2024-06-28 | 2024-06-28 | Gold-silver alloy structure for semiconductor device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410852249.9A CN118398588A (en) | 2024-06-28 | 2024-06-28 | Gold-silver alloy structure for semiconductor device and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118398588A true CN118398588A (en) | 2024-07-26 |
Family
ID=92001669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410852249.9A Pending CN118398588A (en) | 2024-06-28 | 2024-06-28 | Gold-silver alloy structure for semiconductor device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN118398588A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100323518A1 (en) * | 2007-11-14 | 2010-12-23 | Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. | Method for producing a nanoporous layer |
| US20130245416A1 (en) * | 2010-09-14 | 2013-09-19 | Martin L. Yarmush | Nanoporous Metal Multiple Electrode Array and Method of Making Same |
| CN117542818A (en) * | 2024-01-10 | 2024-02-09 | 深圳市联合蓝海应用材料科技股份有限公司 | Gold-silver alloy bump and preparation method and application thereof |
-
2024
- 2024-06-28 CN CN202410852249.9A patent/CN118398588A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100323518A1 (en) * | 2007-11-14 | 2010-12-23 | Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. | Method for producing a nanoporous layer |
| US20130245416A1 (en) * | 2010-09-14 | 2013-09-19 | Martin L. Yarmush | Nanoporous Metal Multiple Electrode Array and Method of Making Same |
| CN117542818A (en) * | 2024-01-10 | 2024-02-09 | 深圳市联合蓝海应用材料科技股份有限公司 | Gold-silver alloy bump and preparation method and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7122894B2 (en) | Wiring substrate and process for manufacturing the same | |
| US9721913B2 (en) | Semiconductor package and method of manufacturing thereof | |
| KR101545402B1 (en) | Semiconductor structure and manufacturing method thereof | |
| US20150171039A1 (en) | Redistribution layer alloy structure and manufacturing method thereof | |
| JP4245754B2 (en) | Semiconductor device | |
| JP5636122B1 (en) | Semiconductor structure and manufacturing method thereof | |
| CN101595248B (en) | Sn-B plating solution and plating method using it | |
| KR102423021B1 (en) | Forming Method of Cu to Cu Flip Chip Interconnection and Cu to Cu Flip Chip Interconnection Thereby | |
| CN111607811A (en) | Preparation method and application of copper-copper bonding material | |
| CN117542818B (en) | Gold-silver alloy bump and preparation method and application thereof | |
| TWI482231B (en) | Electrical connecting element, method of fabricating the same, and electrical structure comprising the same | |
| CN115101507A (en) | Ultra-narrow pitch nt-Cu/nano composite Ag-based micro-bump interconnection structure and preparation method thereof | |
| US20060231927A1 (en) | Semiconductor chip mounting body and manufacturing method thereof | |
| TWI292599B (en) | A method for constructing contact formations | |
| US20090014897A1 (en) | Semiconductor chip package and method of manufacturing the same | |
| CN118398588A (en) | Gold-silver alloy structure for semiconductor device and preparation method thereof | |
| JP3813497B2 (en) | Bump forming method and semiconductor device mounting structure | |
| JP2000349111A (en) | Electrode for solder bonding | |
| CN111696956B (en) | Porous Cu on Cu surface for semiconductor packages | |
| JP4520665B2 (en) | Printed wiring board, manufacturing method thereof, and component mounting structure | |
| US20230317650A1 (en) | Connection structural body and semiconductor device | |
| US20240063159A1 (en) | Package structures and methods of manufacturing the same | |
| TW201033404A (en) | Method for forming projection electrode and substituted gold plating solution | |
| JP4597183B2 (en) | Manufacturing method of semiconductor device | |
| Yang et al. | The impact of zincation on the electroless nickel UBM for low cost flip chip technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |