CN118330413A - Method and system for detecting short circuit of semiconductor device - Google Patents

Abstract

The invention discloses a method and a system for detecting short circuit of semiconductor equipment, which trigger periodic detection of a working section based on the sub-state of the working section; collecting working currents of components in the working section and forming a working current set; traversing the working current set, and screening currents exceeding a preset current value matched with the sub-state to define abnormal currents; collecting abnormal currents, and determining the quantity of the abnormal currents and corresponding components; correlating according to the quantity of abnormal currents and components, and defining an abnormal area; and carrying out regional detection on the abnormal region to define whether the equipment has short circuit or not, dividing sub-states of each working section based on the overall state of the semiconductor equipment at the moment so as to realize abnormal detection on each working section, thereby carrying out control on the working current set of the component in each working section, further controlling the abnormal range of each working section so as to carry out short circuit test on each working section, and further controlling the short circuit risk of the semiconductor equipment as a whole.

Description

Method and system for detecting short circuit of semiconductor device

Technical Field

The invention relates to the technical field of detection of short circuits of semiconductor equipment, in particular to a method and a system for detecting the short circuits of the semiconductor equipment.

Background

Along with development of technology, semiconductor equipment is used as industrial equipment and is used for producing semiconductors, a plurality of working sections are adopted in the semiconductor equipment, corresponding processes are responsible for through different working sections, in the prior art, the working sections are mutually butted and assisted, each working section has a corresponding working state, the working sections have corresponding working current and regulation measures in the working process, however, partial abnormality exists in the working sections and trigger integral short circuits, and in the prior art, false alarms exist in the integral short circuits, so that the semiconductor equipment triggers the integral short circuits and cannot carry out short circuit test on single working sections.

Disclosure of Invention

The invention aims to overcome the defects of the prior art, and provides a method and a system for detecting the short circuit of a semiconductor device.

In order to solve the technical problems, the embodiment of the invention provides a method for detecting a short circuit of a semiconductor device, which is applied to the semiconductor device;

The method for detecting the short circuit of the semiconductor device comprises the following steps:

Acquiring the overall state of the semiconductor device, and dividing the sub-states of each working section based on the overall state of the semiconductor device;

Triggering periodic detection of the working segment based on the sub-state of the working segment;

in the periodic detection of the working section, collecting working current of components in the working section and forming a working current set;

traversing the working current set, and screening currents exceeding a preset current value matched with the sub-state to define abnormal currents;

collecting abnormal currents, and determining the quantity of the abnormal currents and corresponding components;

Correlating according to the quantity of abnormal currents and components, and defining an abnormal area;

and carrying out regional detection on the abnormal region to define whether the device has a short circuit or not.

Optionally, the acquiring the overall state of the semiconductor device and dividing the sub-states of each working segment based on the overall state of the semiconductor device includes:

Acquiring the positioning of the semiconductor equipment;

triggering data acquisition of the semiconductor device according to the positioning of the semiconductor device;

sequentially acquiring working data of the semiconductor device in the data acquisition of the semiconductor device;

Determining the overall state of the semiconductor device according to the working data of the semiconductor device;

Collecting action signals of each working section in the semiconductor equipment;

Sub-states of each working section are divided according to the action signals of each working section and the overall state of the semiconductor device.

Optionally, the period detection of the working segment is triggered based on the sub-state of the working segment, including:

collecting sub-states of the working section;

Matching the sub-state of the working section with the detection periodic table to output the detection period of the working section;

collecting abnormal alarm times of the working section in a preset time;

dynamically adjusting the detection times of the working section according to the abnormal alarm times and the detection period of the working section;

and periodically detecting the working section based on the detection times and different detection speeds of the working section.

Optionally, in the periodic detection of the working section, collecting working currents of components in the working section and forming a working current set, including:

in the periodic detection of the working section, collecting working current of a component in the working section;

aiming at the parts corresponding to the working current marks and the detection times;

Classifying the working currents based on the components, and sequentially sequencing the working currents according to the detection times to form a working current set of the components;

if the components with the same model exist, classifying according to the positions of the components in the semiconductor equipment, and classifying along the collection point of the working current.

Optionally, traversing the working current set and screening currents exceeding a preset current value matched with the sub-state to define an abnormal current, including:

acquiring a working current set;

Traversing the working current set, and comparing each working current in the working current set one by one;

Collecting sub-states corresponding to the working sections, and allocating preset current values according to the sub-states corresponding to the working sections;

Comparing each working current in the working current set with a corresponding preset current value to define abnormal current.

Optionally, traversing the working current set, and screening currents exceeding a preset current value matched with the sub-state to define an abnormal current, and further including:

collecting abnormal current;

sorting the magnitudes of the abnormal currents, and recording the acquisition time of the abnormal currents;

positioning a component in abnormal current, and binding the component with an associated component;

Comparing the operating current of the component to the operating current of the associated component based on the acquisition time;

sequentially measuring and calculating a plurality of abnormal currents, and comparing according to the ratio between the working current of the component and the working current of the related component so as to review the abnormal currents;

if the ratio between the working current of the component and the working current of the associated component meets the preset range, the detection of the abnormal currents is correct.

Optionally, the collecting the abnormal current and determining the number of the abnormal current and the corresponding components includes:

collecting abnormal current;

sequentially calculating the quantity of the abnormal currents in the process of collecting the abnormal currents;

And tracing the corresponding component according to the abnormal current.

Optionally, the correlating according to the number of the abnormal currents and the components and defining the abnormal region includes:

Correlating the number of abnormal currents with corresponding components;

positioning a component containing abnormal current and forming a component area along the current direction;

Marking a component containing a normal current for a component area;

Dividing the component region based on the position of the component containing the normal current to form a plurality of abnormal regions;

Collecting the number of abnormal currents contained in the component;

determining an expansion range according to the mapping between the number of abnormal currents contained in the component and the number mapping table;

the size of the abnormal region is adjusted based on the extended range.

Optionally, the detecting the abnormal area to define whether the device has a short circuit includes:

a freeze abnormal area;

Traversing the abnormal region and outputting a current path;

Performing point-by-point investigation based on the current path to perform regional detection;

in regional detection of an abnormal region, performing limit test on components in the abnormal region;

inputting corresponding limiting current when the component in the abnormal area is in a standby state, and collecting the test state and test time of the component;

Judging the abnormality degree of the component according to the test state and the test time;

And collecting the abnormal degrees of different parts, and defining whether the equipment has short circuit or not according to the abnormal degrees of the different parts.

In addition, the embodiment of the invention also provides a system for detecting the short circuit of the semiconductor device, which comprises the following components:

the acquisition module is used for acquiring the overall state of the semiconductor device and dividing the sub-states of each working section based on the overall state of the semiconductor device;

the detection module is used for triggering the periodic detection of the working section based on the sub-state of the working section;

The collecting module is used for collecting working currents of components in the working section in the periodic detection of the working section and forming a working current set;

The screening module is used for traversing the working current set and screening currents exceeding a preset current value matched with the sub-state to define abnormal currents;

The abnormal module is used for collecting abnormal currents and determining the quantity of the abnormal currents and corresponding components;

the area module is used for carrying out association according to the quantity of abnormal currents and the components and defining an abnormal area;

And the detection module is used for carrying out regional detection on the abnormal region so as to define whether the equipment has a short circuit or not.

In the embodiment of the invention, the method in the embodiment of the invention obtains the overall state of the semiconductor device and divides the sub-states of each working section based on the overall state of the semiconductor device; triggering periodic detection of the working segment based on the sub-state of the working segment; in the periodic detection of the working section, collecting working current of components in the working section and forming a working current set; traversing the working current set, and screening currents exceeding a preset current value matched with the sub-state to define abnormal currents; collecting abnormal currents, and determining the quantity of the abnormal currents and corresponding components; correlating according to the quantity of abnormal currents and components, and defining an abnormal area; the method comprises the steps of carrying out regional detection on abnormal areas to define whether short circuits exist in equipment, carrying out sectional control on the semiconductor equipment, dividing sub-states of each working section based on the overall state of the semiconductor equipment so as to facilitate abnormal detection on each working section, carrying out control on working current sets of components in each working section so as to facilitate stop-motion abnormal currents, defining the abnormal areas, further carrying out control on abnormal ranges of each working section so as to facilitate short circuit test on each working section, thereby integrally controlling short circuit risks of the semiconductor equipment, and carrying out stable operation on the controlled semiconductor equipment under an overall angle.

Drawings

In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings which are required in the description of the embodiments or the prior art will be briefly described, it being obvious that the drawings in the description below are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

Fig. 1 is a flow chart of a method for detecting a short circuit of a semiconductor device according to an embodiment of the present invention;

fig. 2 is a flowchart of S11 in a method for detecting a short circuit of a semiconductor device according to an embodiment of the present invention;

fig. 3 is a flowchart of S12 in the method for detecting a short circuit of a semiconductor device according to an embodiment of the present invention;

fig. 4 is a flowchart of S13 in the method for detecting a short circuit of a semiconductor device according to an embodiment of the present invention;

fig. 5 is a flowchart of S14 in the method for detecting a short circuit of a semiconductor device according to an embodiment of the present invention;

fig. 6 is a flowchart of S15 in the method for detecting a short circuit of a semiconductor device in the embodiment of the present invention;

Fig. 7 is a flowchart of S16 in the method for detecting a short circuit of a semiconductor device in the embodiment of the present invention;

Fig. 8 is a flowchart of S17 in the method for detecting a short circuit of a semiconductor device in the embodiment of the present invention;

fig. 9 is a schematic structural diagram of a detection system for a short circuit of a semiconductor device in an embodiment of the present invention;

fig. 10 is a hardware diagram of an electronic device, according to an example embodiment.

Detailed Description

The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.

Examples

Referring to fig. 1 to 10, a method for detecting a short circuit of a semiconductor device is applied to the semiconductor device; the method for detecting the short circuit of the semiconductor device comprises the following steps:

step S11: acquiring the overall state of the semiconductor device, and dividing the sub-states of each working section based on the overall state of the semiconductor device;

step S12: triggering periodic detection of the working segment based on the sub-state of the working segment;

Step S13: in the periodic detection of the working section, collecting working current of components in the working section and forming a working current set;

Step S14: traversing the working current set, and screening currents exceeding a preset current value matched with the sub-state to define abnormal currents;

step S15: collecting abnormal currents, and determining the quantity of the abnormal currents and corresponding components;

step S16: correlating according to the quantity of abnormal currents and components, and defining an abnormal area;

step S17: and carrying out regional detection on the abnormal region to define whether the device has a short circuit or not.

In the embodiment of the invention, the method in the embodiment of the invention obtains the overall state of the semiconductor device and divides the sub-states of each working section based on the overall state of the semiconductor device; triggering periodic detection of the working segment based on the sub-state of the working segment; in the periodic detection of the working section, collecting working current of components in the working section and forming a working current set; traversing the working current set, and screening currents exceeding a preset current value matched with the sub-state to define abnormal currents; collecting abnormal currents, and determining the quantity of the abnormal currents and corresponding components; correlating according to the quantity of abnormal currents and components, and defining an abnormal area; the method comprises the steps of carrying out regional detection on abnormal areas to define whether short circuits exist in equipment, carrying out sectional control on the semiconductor equipment, dividing sub-states of each working section based on the overall state of the semiconductor equipment so as to facilitate abnormal detection on each working section, carrying out control on working current sets of components in each working section so as to facilitate stop-motion abnormal currents, defining the abnormal areas, further carrying out control on abnormal ranges of each working section so as to facilitate short circuit test on each working section, thereby integrally controlling short circuit risks of the semiconductor equipment, and carrying out stable operation on the controlled semiconductor equipment under an overall angle.

In step S11, the overall state of the semiconductor device is acquired, and sub-states of each working section are divided based on the overall state of the semiconductor device;

In the embodiment of the application, the semiconductor equipment is subjected to overall control, and the overall state of the semiconductor equipment is obtained so as to trace back to the sub-state of each working section from the overall state of the semiconductor equipment, so that the sub-state of each working section is divided based on the overall state of the semiconductor equipment, and the mutual control is carried out on each working section.

In the implementation process of the invention, the specific steps can be as follows:

s111: acquiring the positioning of the semiconductor equipment;

s112: triggering data acquisition of the semiconductor device according to the positioning of the semiconductor device;

in the embodiment of the application, the positioning of the semiconductor equipment is acquired so as to be convenient for triggering the data acquisition of the semiconductor equipment according to the positioning of the semiconductor equipment as the triggering information, so as to be convenient for controlling and tracking the data of the semiconductor equipment, ensure the full processing of the data of the semiconductor equipment, and simultaneously determine the state by utilizing the data of the semiconductor equipment.

S113: sequentially acquiring working data of the semiconductor device in the data acquisition of the semiconductor device;

S114: determining the overall state of the semiconductor device according to the working data of the semiconductor device;

s115: collecting action signals of each working section in the semiconductor equipment;

S116: sub-states of each working section are divided according to the action signals of each working section and the overall state of the semiconductor device.

In the embodiment of the application, in the data acquisition of the semiconductor device, the working data of the semiconductor device are sequentially acquired, and the working data of the semiconductor device are continuously tracked, so that the overall state of the semiconductor device is determined according to the working data of the semiconductor device.

Further, the action signals of the working sections in the semiconductor equipment are collected so as to divide the sub-states of the working sections according to the action signals of the working sections and the overall state of the semiconductor equipment, so that the sub-states of the working sections are divided from the overall state of the semiconductor equipment, the sub-states of the working sections are used for controlling the working sections, and the independent test and control of the working sections are particularly guaranteed, and the test accuracy of the working sections is guaranteed.

In step S12, triggering periodic detection of the working segment based on the sub-state of the working segment;

In the embodiment of the application, the sub-states of the working segments are introduced, and the sub-states of the working segments are controlled, so that the independent test of each working segment is triggered, and the periodical detection of the working segments is triggered conveniently.

In the implementation process of the invention, the specific steps can be as follows:

s121: collecting sub-states of the working section;

s122: matching the sub-state of the working section with the detection periodic table to output the detection period of the working section;

s123: collecting abnormal alarm times of the working section in a preset time;

s124: dynamically adjusting the detection times of the working section according to the abnormal alarm times and the detection period of the working section;

S125: and periodically detecting the working section based on the detection times and different detection speeds of the working section.

In the embodiment of the application, the sub-state of the working section is collected, and the concept of the sub-state of the working section is introduced so as to facilitate a plurality of independent tests on the overall state of the semiconductor device, and at the moment, the sub-state of the working section is matched with the detection periodic table to output the detection period of the working section, thereby defining the detection period of the working section.

In addition, the abnormal alarming times of the working section in the preset time are collected, the abnormal alarming times are introduced so as to correlate the abnormal alarming times with the detection periods of the working section, the detection times of the working section are dynamically adjusted according to the abnormal alarming times and the detection periods of the working section, the suitability of the detection times of the working section is guaranteed, the abnormal alarming times and the detection periods of the working section are fully considered, the corresponding working section is guaranteed to be controlled, in addition, the working section is periodically detected based on the detection times of the working section and different detection speeds, multiple and effective tests of the working section are guaranteed, the high-voltage test is conducted on the working section at different detection speeds, the bearing capacity of the working section is controlled, and multiple and effective tests of the working section are further guaranteed.

In step S13, during the periodic detection of the working segment, collecting the working current of the components in the working segment, and forming a working current set;

in the embodiment of the application, in the periodical detection of the working section, the working section carries out reciprocating test according to the detection times of the working section, meanwhile, in each test process of the working section, the working current of the component in the working section is collected, and a working current set is formed so as to form working current sets under different times, so that the current condition of the working section is recorded based on the working current sets.

In the implementation process of the invention, the specific steps can be as follows:

S131: in the periodic detection of the working section, collecting working current of a component in the working section;

S132: aiming at the parts corresponding to the working current marks and the detection times;

s133: classifying the working currents based on the components, and sequentially sequencing the working currents according to the detection times to form a working current set of the components;

in the embodiment of the application, the periodic detection of the working section is tracked, in the periodic detection of the working section, the working current of the components in the working section is collected, and the detection of the components in the working section is realized so as to collect the current of the components in the working section, and at the moment, the corresponding components and detection times are marked according to the working current; the working currents are classified based on the components, and are sequentially ordered according to the detection times, so that a working current set of the components is formed.

S134: if the components with the same model exist, classifying according to the positions of the components in the semiconductor equipment, and classifying along the collection points of the working current;

In the embodiment of the application, for each component in the working section, in order to avoid the influence of the same type of component, the components with the same model are screened, and if the components with the same model exist, the components are classified according to the positions of the components in the semiconductor equipment, and the components are classified along the collection points of working currents; therefore, the positions of the components in the semiconductor equipment are fully utilized, so that the components at different positions can be conveniently controlled based on the positions of the components in the semiconductor equipment, and meanwhile, the components are classified along the collection points of the working current, so that the classification accuracy of the working current is ensured.

S14: traversing the working current set, and screening currents exceeding a preset current value matched with the sub-state to define abnormal currents;

In the implementation process of the invention, the specific steps can be as follows:

S141: acquiring a working current set;

S142: traversing the working current set, and comparing each working current in the working current set one by one;

S143: collecting sub-states corresponding to the working sections, and allocating preset current values according to the sub-states corresponding to the working sections;

S144: comparing each working current in the working current set with a corresponding preset current value to define abnormal current;

In the embodiment of the application, the working current set is acquired so as to control the working current set, and each part of a single working section is processed in a targeted manner, at the moment, the working current set is traversed, and each working current in the working current set is compared one by one so as to fully process each working current in the working current set and avoid missing processing.

Meanwhile, the sub-state corresponding to the working section is collected so as to facilitate the introduction of the sub-state corresponding to the working section, so that the preset current value is allocated according to the sub-state corresponding to the working section, and the comparison of the follow-up preset current value and each working current in the working current set is ensured by considering the sub-state corresponding to the working section, therefore, each working current in the working current set is compared with the corresponding preset current value to define the abnormal current, the abnormal current is defined, and the management and control of the abnormal current of the component are ensured.

The traversing the working current set, and screening the current exceeding the preset current value matched with the sub-state to define the abnormal current, and the method further comprises the following steps: collecting abnormal current; sorting the magnitudes of the abnormal currents, and recording the acquisition time of the abnormal currents; positioning a component in abnormal current, and binding the component with an associated component; comparing the operating current of the component to the operating current of the associated component based on the acquisition time; sequentially measuring and calculating a plurality of abnormal currents, and comparing according to the ratio between the working current of the component and the working current of the related component so as to review the abnormal currents; if the ratio between the working current of the component and the working current of the related component accords with the preset range, the detection of a plurality of abnormal currents is correct, the screening of the abnormal currents is realized, and the review of the abnormal currents is ensured.

S15: collecting abnormal currents, and determining the quantity of the abnormal currents and corresponding components;

In an embodiment of the application, the abnormal current is collected and controlled so as to introduce the quantity of the abnormal current and corresponding components, and the quantity of the abnormal current and the corresponding components are correlated so as to facilitate further processing.

In the implementation process of the invention, the specific steps can be as follows:

s151: collecting abnormal current;

s152: sequentially calculating the quantity of the abnormal currents in the process of collecting the abnormal currents;

s153: and tracing the corresponding component according to the abnormal current.

In the embodiment of the application, the abnormal currents are collected and controlled, and at the moment, the number of the abnormal currents is sequentially calculated in the process of collecting the abnormal currents, so that the number of the abnormal currents is introduced, and the corresponding components are traced according to the abnormal currents, so that the number of the abnormal currents is marked in the components.

S16: correlating according to the quantity of abnormal currents and components, and defining an abnormal area;

In the embodiment of the application, the number of abnormal currents and the components are associated, so that the number of abnormal currents is marked in the components, and the abnormal region is defined according to the number of abnormal currents and the components, so that the abnormal region is focused and examined.

In the implementation process of the invention, the specific steps can be as follows:

s161: correlating the number of abnormal currents with corresponding components;

s162: positioning a component containing abnormal current and forming a component area along the current direction;

In an embodiment of the application, the number of abnormal currents and the corresponding components are correlated so as to mark the number of abnormal currents in the components, and at the same time, the component containing the abnormal currents is positioned, and position marking is performed on the component so as to utilize the current direction and further form a component area along the current direction.

S163: marking a component containing a normal current for a component area;

S164: dividing the component region based on the position of the component containing the normal current to form a plurality of abnormal regions;

In the embodiment of the application, the component area is controlled so as to mark the component containing the normal current in the component area, and the influence of the component containing the normal current is eliminated, so that the component containing the abnormal current is fully focused, the control efficiency is improved, and meanwhile, the component area is divided based on the position of the component containing the normal current, so that a plurality of abnormal areas are formed.

S165: collecting the number of abnormal currents contained in the component;

s166: determining an expansion range according to the mapping between the number of abnormal currents contained in the component and the number mapping table;

s167: adjusting the size of the abnormal region based on the extended range;

In an embodiment of the present application, the number of abnormal currents contained in the component is collected; determining an expansion range according to the mapping between the number of abnormal currents contained in the component and the number mapping table; the size of the abnormal region is adjusted based on the expansion range, so that the number of abnormal currents contained in the component is utilized, the number of abnormal currents contained in the component is controlled, the expansion range is determined conveniently, the size of the abnormal region is adjusted based on the expansion range, the proper expansion of the abnormal region is realized, the control of the limit position is fully considered, and the key control of the subsequent abnormal region is ensured.

S17: performing regional detection on the abnormal region to define whether the equipment has a short circuit or not;

in the embodiment of the application, the semiconductor equipment is controlled in a segmented mode, the sub-states of each working section are divided based on the overall state of the semiconductor equipment so as to facilitate the abnormal detection of each working section, thereby controlling the working current set of the components in each working section so as to facilitate the stop motion of abnormal current, defining an abnormal area, further controlling the abnormal range of each working section so as to facilitate the short circuit test of each working section, thereby controlling the short circuit risk of the semiconductor equipment as a whole and controlling the stable operation of the semiconductor equipment under the overall angle.

In the implementation process of the invention, the specific steps can be as follows:

S171: a freeze abnormal area;

S172: traversing the abnormal region and outputting a current path;

s173: performing point-by-point investigation based on the current path to perform regional detection;

in the embodiment of the application, the abnormal region is fixed to facilitate the control of the abnormal region, at the moment, the abnormal region is traversed, the current path is output, and the current path is defined as an investigation path to facilitate the point-by-point investigation based on the current path so as to perform regional detection and ensure the whole coverage of the path.

S174: in regional detection of an abnormal region, performing limit test on components in the abnormal region;

s175: inputting corresponding limiting current when the component in the abnormal area is in a standby state, and collecting the test state and test time of the component;

S176: judging the abnormality degree of the component according to the test state and the test time;

s177: and collecting the abnormal degrees of different parts, and defining whether the equipment has short circuit or not according to the abnormal degrees of the different parts.

In the embodiment of the application, the limit test is introduced for the abnormal region so as to facilitate the limit control of the component, and at the moment, the limit test is performed on the component in the abnormal region in the regional detection of the abnormal region, so that the compression resistance effect of the component in the existing state is reflected, and the subsequent replacement or adjustment of the component is performed.

Further, inputting a corresponding limiting current when the component in the abnormal area is in a standby state, and collecting a test state and test time of the component; judging the abnormality degree of the component according to the test state and the test time; the abnormal degree of different parts is collected, and whether the equipment has short circuit is defined according to the abnormal degree of different parts, so that the abnormal range of each working section is further controlled based on the risk management and control of different parts, so that the short circuit test is conducted on each working section, the short circuit risk of the semiconductor equipment is managed and controlled as a whole, and the semiconductor equipment is controlled to work stably under the whole angle.

In the embodiment of the application, the overall state of the semiconductor equipment is obtained, and the sub-states of each working section are divided based on the overall state of the semiconductor equipment; triggering periodic detection of the working segment based on the sub-state of the working segment; in the periodic detection of the working section, collecting working current of components in the working section and forming a working current set; traversing the working current set, and screening currents exceeding a preset current value matched with the sub-state to define abnormal currents; collecting abnormal currents, and determining the quantity of the abnormal currents and corresponding components; correlating according to the quantity of abnormal currents and components, and defining an abnormal area; the method comprises the steps of carrying out regional detection on abnormal areas to define whether short circuits exist in equipment, carrying out sectional control on the semiconductor equipment, dividing sub-states of each working section based on the overall state of the semiconductor equipment so as to facilitate abnormal detection on each working section, carrying out control on working current sets of components in each working section so as to facilitate stop-motion abnormal currents, defining the abnormal areas, further carrying out control on abnormal ranges of each working section so as to facilitate short circuit test on each working section, thereby integrally controlling short circuit risks of the semiconductor equipment, and carrying out stable operation on the controlled semiconductor equipment under an overall angle.

Examples

Referring to fig. 9, fig. 9 is a schematic structural diagram of a system for detecting a short circuit of a semiconductor device according to an embodiment of the invention.

As shown in fig. 9, a system for detecting a short circuit of a semiconductor device includes:

an acquisition module 21, configured to acquire an overall state of the semiconductor device, and divide sub-states of each working segment based on the overall state of the semiconductor device;

a detection module 22, configured to trigger periodic detection of the working segment based on the sub-state of the working segment;

The collecting module 23 is used for collecting working currents of components in the working section in the periodical detection of the working section and forming a working current set;

A screening module 24, configured to traverse the working current set and screen currents exceeding a preset current value matched with the sub-state to define an abnormal current;

an anomaly module 25 for collecting the anomaly current and determining the number of anomaly currents and the corresponding components;

a region module 26 for associating according to the number of abnormal currents, the components, and defining an abnormal region;

The detection module 27 is configured to perform regional detection on the abnormal area to define whether the device has a short circuit.

Examples

Referring to fig. 10, an electronic device 40 according to this embodiment of the present invention is described below with reference to fig. 10. The electronic device 40 shown in fig. 10 is merely an example and should not be construed as limiting the functionality and scope of use of embodiments of the present invention.

As shown in fig. 10, the electronic device 40 is in the form of a general purpose computing device. Components of electronic device 40 may include, but are not limited to: the at least one processing unit 41, the at least one memory unit 42, a bus 43 connecting the different system components, including the memory unit 42 and the processing unit 41.

Wherein the storage unit stores program code that is executable by the processing unit 41 such that the processing unit 41 performs the steps according to various exemplary embodiments of the present invention described in the above-described "example methods" section of the present specification.

The memory unit 42 may include readable media in the form of volatile memory units, such as Random Access Memory (RAM) 421 and/or cache memory 422, and may further include Read Only Memory (ROM) 423.

The storage unit 42 may also include a program/utility 424 having a set (at least one) of program modules 425, such program modules 425 including, but not limited to: an operating system, one or more application programs, other program modules, and program data, each or some combination of which may include an implementation of a network environment.

The bus 43 may be one or more of several types of bus structures including a memory unit bus or memory unit controller, a peripheral bus, an accelerated graphics port, a processing unit, or a local bus using any of a variety of bus architectures.

Electronic device 40 may also communicate with one or more external devices (e.g., keyboard, pointing device, bluetooth device, etc.), one or more devices that enable a user to interact with electronic device 40, and/or any device (e.g., router, modem, etc.) that enables electronic device 40 to communicate with one or more other computing devices. Such communication may occur through an input/output (I/O) interface 44. Also, electronic device 40 may communicate with one or more networks such as a Local Area Network (LAN), a Wide Area Network (WAN) and/or a public network, such as the Internet, via network adapter 45. As shown in fig. 10, the network adapter 45 communicates with other modules of the electronic device 40 via the bus 43. It should be appreciated that although not shown in fig. 10, other hardware and/or software modules may be used in connection with electronic device 40, including, but not limited to: microcode, device drivers, redundant processing units, external disk drive arrays, RAID systems, tape drives, data backup planning systems, and the like.

From the above description of embodiments, those skilled in the art will readily appreciate that the example embodiments described herein may be implemented in software, or may be implemented in software in combination with the necessary hardware. Thus, the technical solution according to the embodiments of the present disclosure may be embodied in the form of a software product, which may be stored in a non-volatile storage medium (may be a CD-ROM, a U-disk, a mobile hard disk, etc.) or on a network, including several instructions to cause a computing device (may be a personal computer, a server, a terminal device, or a network device, etc.) to perform the method according to the embodiments of the present disclosure.

Those of ordinary skill in the art will appreciate that all or part of the steps in the various methods of the above embodiments may be implemented by a program to instruct related hardware, the program may be stored in a computer readable storage medium, and the storage medium may include: read Only Memory (ROM), random access Memory (RAM, randomAccess Memory), magnetic disk or optical disk, and the like. And which stores computer program instructions which, when executed by a computer, cause the computer to perform a method according to the above.

In addition, the method and system for detecting a short circuit of a semiconductor device provided by the embodiments of the present invention are described in detail, and specific examples should be adopted to illustrate the principles and embodiments of the present invention, where the descriptions of the above examples are only used to help understand the method and core ideas of the present invention; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present invention, the present description should not be construed as limiting the present invention in view of the above.

Claims (10)

1. A detection method of a short circuit of a semiconductor device is characterized by being applied to the semiconductor device;

The method for detecting the short circuit of the semiconductor device comprises the following steps:

Acquiring the overall state of the semiconductor device, and dividing the sub-states of each working section based on the overall state of the semiconductor device;

Triggering periodic detection of the working segment based on the sub-state of the working segment;

in the periodic detection of the working section, collecting working current of components in the working section and forming a working current set;

traversing the working current set, and screening currents exceeding a preset current value matched with the sub-state to define abnormal currents;

collecting abnormal currents, and determining the quantity of the abnormal currents and corresponding components;

Correlating according to the quantity of abnormal currents and components, and defining an abnormal area;

and carrying out regional detection on the abnormal region to define whether the device has a short circuit or not.

2. The method for detecting a short circuit of a semiconductor device according to claim 1, wherein the acquiring the overall state of the semiconductor device and dividing the sub-states of the respective operation segments based on the overall state of the semiconductor device includes:

Acquiring the positioning of the semiconductor equipment;

triggering data acquisition of the semiconductor device according to the positioning of the semiconductor device;

sequentially acquiring working data of the semiconductor device in the data acquisition of the semiconductor device;

Determining the overall state of the semiconductor device according to the working data of the semiconductor device;

Collecting action signals of each working section in the semiconductor equipment;

Sub-states of each working section are divided according to the action signals of each working section and the overall state of the semiconductor device.

3. The method for detecting a short circuit of a semiconductor device according to claim 2, wherein the triggering of the periodic detection of the active segment based on the sub-state of the active segment comprises:

collecting sub-states of the working section;

Matching the sub-state of the working section with the detection periodic table to output the detection period of the working section;

collecting abnormal alarm times of the working section in a preset time;

dynamically adjusting the detection times of the working section according to the abnormal alarm times and the detection period of the working section;

and periodically detecting the working section based on the detection times and different detection speeds of the working section.

4. The method for detecting a short circuit of a semiconductor device according to claim 1, wherein in the periodic detection of the operation section, an operation current of a component in the operation section is collected and an operation current set is formed, comprising:

in the periodic detection of the working section, collecting working current of a component in the working section;

aiming at the parts corresponding to the working current marks and the detection times;

Classifying the working currents based on the components, and sequentially sequencing the working currents according to the detection times to form a working current set of the components;

if the components with the same model exist, classifying according to the positions of the components in the semiconductor equipment, and classifying along the collection point of the working current.

5. The method of claim 4, wherein traversing the set of operating currents and screening currents exceeding a preset current value matched to the sub-state to define an abnormal current comprises:

acquiring a working current set;

Traversing the working current set, and comparing each working current in the working current set one by one;

Collecting sub-states corresponding to the working sections, and allocating preset current values according to the sub-states corresponding to the working sections;

Comparing each working current in the working current set with a corresponding preset current value to define abnormal current.

6. The method for detecting a short circuit of a semiconductor device according to claim 5, wherein traversing the set of operating currents and screening currents exceeding a preset current value matched to the sub-state to define an abnormal current, further comprises:

collecting abnormal current;

sorting the magnitudes of the abnormal currents, and recording the acquisition time of the abnormal currents;

positioning a component in abnormal current, and binding the component with an associated component;

Comparing the operating current of the component to the operating current of the associated component based on the acquisition time;

sequentially measuring and calculating a plurality of abnormal currents, and comparing according to the ratio between the working current of the component and the working current of the related component so as to review the abnormal currents;

if the ratio between the working current of the component and the working current of the associated component meets the preset range, the detection of the abnormal currents is correct.

7. The method for detecting a short circuit of a semiconductor device according to claim 6, wherein the collecting the abnormal current and determining the number of abnormal currents and corresponding components includes:

collecting abnormal current;

sequentially calculating the quantity of the abnormal currents in the process of collecting the abnormal currents;

And tracing the corresponding component according to the abnormal current.

8. The method for detecting a short circuit of a semiconductor device according to claim 7, wherein the correlating according to the number of abnormal currents, the components, and defining the abnormal region includes:

Correlating the number of abnormal currents with corresponding components;

positioning a component containing abnormal current and forming a component area along the current direction;

Marking a component containing a normal current for a component area;

Dividing the component region based on the position of the component containing the normal current to form a plurality of abnormal regions;

Collecting the number of abnormal currents contained in the component;

determining an expansion range according to the mapping between the number of abnormal currents contained in the component and the number mapping table;

the size of the abnormal region is adjusted based on the extended range.

9. The method for detecting a short circuit of a semiconductor device according to claim 8, wherein the performing regional detection on the abnormal region to define whether the device has a short circuit comprises:

a freeze abnormal area;

Traversing the abnormal region and outputting a current path;

Performing point-by-point investigation based on the current path to perform regional detection;

in regional detection of an abnormal region, performing limit test on components in the abnormal region;

inputting corresponding limiting current when the component in the abnormal area is in a standby state, and collecting the test state and test time of the component;

Judging the abnormality degree of the component according to the test state and the test time;

And collecting the abnormal degrees of different parts, and defining whether the equipment has short circuit or not according to the abnormal degrees of the different parts.

10. A detection system of a short circuit of a semiconductor device, characterized in that the detection system of a short circuit of a semiconductor device is applied to the detection method of a short circuit of a semiconductor device according to any one of claims 1 to 9, the detection system of a short circuit of a semiconductor device comprising:

the acquisition module is used for acquiring the overall state of the semiconductor device and dividing the sub-states of each working section based on the overall state of the semiconductor device;

the detection module is used for triggering the periodic detection of the working section based on the sub-state of the working section;

The collecting module is used for collecting working currents of components in the working section in the periodic detection of the working section and forming a working current set;

The screening module is used for traversing the working current set and screening currents exceeding a preset current value matched with the sub-state to define abnormal currents;

The abnormal module is used for collecting abnormal currents and determining the quantity of the abnormal currents and corresponding components;

the area module is used for carrying out association according to the quantity of abnormal currents and the components and defining an abnormal area;

And the detection module is used for carrying out regional detection on the abnormal region so as to define whether the equipment has a short circuit or not.