CN118315416A - Photoelectric co-regulation and control mixed tunnel junction bipolar transistor and preparation method thereof - Google Patents
Photoelectric co-regulation and control mixed tunnel junction bipolar transistor and preparation method thereof Download PDFInfo
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- CN118315416A CN118315416A CN202410517402.2A CN202410517402A CN118315416A CN 118315416 A CN118315416 A CN 118315416A CN 202410517402 A CN202410517402 A CN 202410517402A CN 118315416 A CN118315416 A CN 118315416A
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- 238000002360 preparation method Methods 0.000 title claims description 8
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 150
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 145
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 30
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 22
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 19
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- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 15
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
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- 229910052719 titanium Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
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Abstract
The invention discloses a photoelectric common-control hybrid tunnel junction bipolar transistor, which relates to the field of semiconductors, and comprises: the device comprises a substrate, a third N-type gallium nitride layer arranged on the substrate, a second P-type gallium nitride layer and an emitter metal contact layer arranged on the substrate, a base metal contact layer and a first P-type heavily doped gallium nitride layer arranged on the second P-type gallium nitride layer, an unintended doped gallium indium nitride polarization layer, a second N-type heavily doped gallium nitride layer, a first N-type gallium nitride layer and a collector metal contact layer arranged on the first N-type gallium nitride layer which are sequentially arranged on the first P-type heavily doped gallium nitride layer. By arranging the tunnel junction, the hole injection can be enhanced, the resistance of the device can be reduced, and the response speed of the device can be improved. The invention overcomes the technological difficulty of preparing by metal organic chemical vapor deposition, reduces the technological difficulty of manufacturing tunnel junction devices and improves the device performance by introducing hydrogen in the molecular beam epitaxial growth process.
Description
Technical Field
The invention relates to the field of photoelectric display, in particular to a photoelectric co-regulation hybrid tunnel junction bipolar transistor and a preparation method thereof.
Background
Gallium nitride (GaN) materials have been attracting attention due to their unique physical properties and have been widely used for the production of high-performance photovoltaic devices. Its advantages include wide band gap, high electron mobility and excellent physicochemical stability, so playing an important role in photoelectron field. Recently, because the gallium nitride-based electronic driving device and the gallium nitride-based blue light LED have the same material and process preparation system, such as a single-chip integrated device of a MOSFET, a HEMT and the gallium nitride-based blue light LED, important support is provided for the reliability and the performance of the integrated device. In particular, the ability to integrate the transmitter and receiver on a single chip provides a completely new possibility for the design of wireless communication modules, with gallium nitride based light emitting and detecting devices covering the entire wavelength range from ultraviolet to visible light.
Tunnel Junctions (TJ) are considered to be effective means of improving current spreading and current injection in nitride-based optoelectronic devices. TJ structures typically require highly doped p/n-GaN as an interface for the p-n junction. At a particular reverse bias, electrons may tunnel from the valence band of p-GaN to the conduction band of n-GaN, ultimately resulting in efficient injection of holes into the active region. The TJ-BJT can be used as either a receiver or an emitter to adjust the output current and intensity by varying the optical input power or base voltage. The TJ tunnel junction is combined with the BJT of the traditional control device, so that the BJT device can realize lower starting voltage and higher switching speed, thereby reducing power consumption, improving the efficiency of the device, and improving the switching speed and frequency response of the device, so that the BJT device is more suitable for high-frequency application. However, since GaN is a wide bandgap semiconductor, the bandgap width is 3.4eV at room temperature, so the probability of direct inter-band tunneling is low, and thus it is still challenging to realize n/p homojunction tunneling, and since hydrogen passivation and hydrogen atom diffusion are relatively difficult, buried p-GaN under highly doped n-GaN is not easily activated, and thus highly doped p-GaN is difficult to be prepared by Metal Organic Chemical Vapor Deposition (MOCVD).
Disclosure of Invention
In view of the disadvantages of the prior art, the technical problem to be solved by the invention is to provide a photoelectric co-regulation and control hybrid tunnel junction bipolar transistor, which aims to grow a tunnel junction through Molecular Beam Epitaxy (MBE), enhance hole injection, reduce the resistance of a device and improve the response speed of the device; the sensitivity of ultraviolet light detection is enhanced; the photoelectric conversion efficiency of ultraviolet light in the current collecting area part is improved; improving current gain and output current density; and the power consumption is reduced. Meanwhile, the invention overcomes the technical difficulty of preparing the tunnel junction by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) method, reduces the technical difficulty of manufacturing the tunnel junction device and improves the device performance by introducing hydrogen in the growth process of Molecular Beam Epitaxy (MBE).
To achieve the above object, in a first aspect of the present invention, there is provided a hybrid tunnel junction bipolar transistor controlled by photoelectricity, the bipolar transistor comprising:
A substrate;
a third N-type gallium nitride layer arranged on the substrate;
A second P-type gallium nitride layer and an emitter metal contact layer 9 disposed on the substrate;
The base metal contact layer and the first P-type heavily doped gallium nitride layer are arranged on the second P-type gallium nitride layer;
The first P-type heavily doped gallium nitride layer is arranged on the first N-type heavily doped gallium nitride layer;
And a collector metal contact layer disposed on the first N-type gallium nitride layer;
the first P-type heavily doped gallium nitride layer, the unintended doped gallium indium nitride polarization layer, the second N-type heavily doped gallium nitride layer 2 and the first N-type gallium nitride layer are sequentially grown by a molecular beam epitaxy MBE.
In a specific embodiment, a buffer layer is further disposed between the substrate and the third N-type gallium nitride layer.
In a specific embodiment, the materials of the base metal contact layer and the collector metal contact layer are semi-transparent nickel/gold metal stacks; the material of the emitter metal contact layer comprises molybdenum, tungsten, titanium, nickel, gold, silver, cadmium and platinum.
In one embodiment, the second N-type gallium nitride layer and the first P-type gallium nitride layer are doped with a high concentration of 1×1018/cm3 to 1×1021/cm3.
In a specific embodiment, the second N-type gallium nitride layer and the first P-type gallium nitride layer are ultrathin gallium nitride layers, wherein the thickness of the second N-type gallium nitride layer is 20nm-40nm, and the thickness of the first P-type gallium nitride layer is 10nm-20nm, so that the TJ tunnel junction structure is formed.
In a specific embodiment, the thickness of the unintentionally doped gallium indium nitride polarization layer 3 is 1nm-2nm ultrathin layer.
In a second aspect of the present invention, a method for preparing a hybrid tunnel junction bipolar transistor is provided, which comprises the following steps:
s1: depositing a third N-type gallium nitride layer on the substrate by adopting a vapor deposition method, and depositing a second P-type gallium nitride layer on the third N-type gallium nitride layer by adopting a vapor deposition method;
S2: sequentially growing a first P-type heavily doped gallium nitride layer, an unintended doped gallium indium nitride polarization layer, a second N-type heavily doped gallium nitride layer and a first N-type gallium nitride layer on the second P-type gallium nitride layer by adopting a molecular beam epitaxy MBE method;
S3: based on a mask, reserving a collector region, sequentially etching and removing part of the first N-type gallium nitride layer, the second N-type heavily doped gallium nitride layer, the unintended doped gallium indium nitride polarization layer and the first P-type heavily doped gallium nitride layer in a base region, and sequentially etching and removing part of the first N-type gallium nitride layer, the second N-type heavily doped gallium nitride layer, the unintended doped gallium indium nitride polarization layer, the first P-type heavily doped gallium nitride layer and the second P-type gallium nitride layer in an emitter region;
S4: a collector metal contact layer is formed in the collector region, a base metal contact layer is formed in the base region, and an emitter metal contact layer is formed in the emitter region.
In one embodiment, the second N-type gallium nitride layer and the first P-type gallium nitride layer are doped with a high concentration of 1×1018/cm3 to 1×1021/cm3.
In a specific embodiment, the second N-type gallium nitride layer and the first P-type gallium nitride layer are ultrathin gallium nitride layers, wherein the thickness of the second N-type gallium nitride layer is 20nm-40nm, and the thickness of the first P-type gallium nitride layer is 10nm-20nm, so that the TJ tunnel junction structure is formed.
In a specific embodiment, the thickness of the unintentionally doped gallium indium nitride polarization layer 3 is 1nm-2nm ultrathin layer.
The invention has the beneficial effects that: 1) The TJ tunnel junction structure is added in the original BJT device, so that the TJ-BJT device can be used as a receiver or a transmitter and can be regulated by changing the light input power or the base voltage. The device can be independently driven by base voltage and ultraviolet light, and is a multifunctional integrated device integrating light emission, detection, sensing, driving and adjustment. 2) The preparation method provided by the invention realizes the integration of the gallium nitride-based BJT device and the gallium nitride-based TJ tunnel junction, can realize the regulation and control of the collector current by using lower base current, realizes the regulation and control function of the device by using lower-power ultraviolet light, and improves the current gain of the device. 3) Compared with the MOCVD method, the method is easier to activate the high-doped P-type GaN below the high-doped N-type GaN, so that the tunneling effect of the electron homojunction is realized, and the difficulty that the high-doped P-type GaN layer cannot be manufactured by the traditional method is solved. 4) The tunnel junction is designed, so that hole injection can be enhanced; the resistance of the device is reduced; the response speed of the device is improved; the sensitivity of ultraviolet light detection is enhanced; the photoelectric conversion efficiency of ultraviolet light in the current collecting area part is improved; improving current gain and output current density; and the power consumption is reduced. 5) The invention overcomes the technical difficulty of preparing the tunnel junction by adopting the Metal Organic Chemical Vapor Deposition (MOCVD), reduces the technical difficulty of manufacturing the tunnel junction device and improves the device performance by introducing hydrogen in the growth process of Molecular Beam Epitaxy (MBE).
Drawings
FIG. 1 is a schematic diagram of a photoelectric co-regulation hybrid tunnel junction bipolar transistor according to an embodiment of the present invention;
fig. 2-a, fig. 2-b, fig. 2-c, fig. 2-d are schematic process flow diagrams of a method for manufacturing a hybrid tunnel junction bipolar transistor with common photoelectric control according to an embodiment of the invention.
Detailed Description
Embodiments of the present patent are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary only for explaining the present patent and are not to be construed as limiting the present patent.
In the description of this patent, it should be understood that the terms "center," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, merely to facilitate describing the patent and simplify the description, and do not indicate or imply that the devices or elements being referred to must have a particular orientation, be configured and operated in a particular orientation, and are therefore not to be construed as limiting the patent.
In the description of this patent, it should be noted that, unless explicitly stated and limited otherwise, the terms "mounted," "connected," and "disposed" are to be construed broadly, and may be fixedly connected, disposed, detachably connected, disposed, or integrally connected, disposed, for example. The specific meaning of the terms in this patent will be understood by those of ordinary skill in the art as the case may be.
The embodiment of the invention provides a photoelectric common-control hybrid tunnel junction bipolar transistor, which is shown in fig. 1, 2-a, 2-b, 2-c and 2-d, and comprises the following components:
a substrate 8;
A third N-type gallium nitride layer 6 disposed on the substrate 8;
A second P-type gallium nitride layer 5 and an emitter metal contact layer 99 disposed on the substrate 8;
A base metal contact layer 10 and a first P-type heavily doped gallium nitride layer disposed on the second P-type gallium nitride layer 5;
The first P-type heavily doped gallium nitride layer is sequentially arranged on the first P-type heavily doped gallium nitride layer, and comprises an unintended doped gallium indium nitride polarization layer 3, a second N-type heavily doped gallium nitride layer and a first N-type gallium nitride layer 1;
And a collector metal contact layer 11 disposed on the first N-type gallium nitride layer 1;
The first P-type heavily doped gallium nitride layer, the unintended doped gallium indium nitride polarization layer 3, the second N-type heavily doped gallium nitride layer 2 and the first N-type gallium nitride layer 1 are sequentially grown by a molecular beam epitaxy MBE.
It should be noted that, in fig. 1, the emitter region corresponding to the emitter metal contact layer 9 is located on the right side, and in fact, the emitter region may be located on the left side of the base region, which functions essentially the same as fig. 1.
In this embodiment, a buffer layer 7 is further disposed between the substrate 8 and the third N-type gallium nitride layer 6.
Typically, undoped gallium nitride may be used for buffer layer 7, and other nitrides or silicides may be used.
It should be noted that the materials of the base metal contact layer 10 and the collector metal contact layer 11 are semi-transparent nickel/gold metal stacks; typically, the translucent material may itself be a translucent material, or may be translucent through a hollowed-out or window design.
It is worth mentioning that the material of the emitter metal contact layer 9 includes, but is not limited to, molybdenum, tungsten, titanium, nickel, gold, silver, cadmium and platinum.
Optionally, the second N-type gallium nitride layer 2 and the first P-type gallium nitride layer 4 are doped with high concentration, and the doping concentration is 1×10 18/cm 3 to 1×10 21/cm 3. Preferably, in this embodiment, the doping concentration is 1X 10 20/cm 3. It should be noted that, in the case of practical process application, the actual doping concentration should deviate slightly from factors such as process, and the practical application effect is similar and falls within the protection scope of the present application.
Optionally, the second N-type gallium nitride layer 2 and the first P-type gallium nitride layer 4 are ultrathin gallium nitride layers, wherein the thickness of the second N-type gallium nitride layer 2 is 20nm-40nm, and the thickness of the first P-type gallium nitride layer 4 is 10nm-20nm, so as to form the TJ tunnel junction structure.
In the present embodiment, the thickness of the second N-type gallium nitride layer 2 is 30nm, and the thickness of the first P-type gallium nitride layer 4 is 15nm.
Optionally, the thickness of the unintentionally doped gallium indium nitride polarizing layer 33 is an ultra-thin layer of 1nm-2 nm.
Typically, in this embodiment, the thickness of the unintentionally doped gallium indium nitride polarizing layer 33 is 1.5nm.
Typically, the etching method in step S4 may employ ICP dry etching, exposure and development wet etching, or the like. In the ICP dry etching, a glass-based mask plate can be used for masking a relevant area.
As shown in fig. 1, fig. 2-a, fig. 2-b, fig. 2-c, and fig. 2-d, the process preparation method is further described below, and a second embodiment of the present invention provides a preparation method of a hybrid tunnel junction bipolar transistor with common photoelectric regulation, and the method includes the following steps:
S1: depositing a third N-type gallium nitride layer 6 on the substrate 8 by adopting a vapor deposition method, and depositing a second P-type gallium nitride layer 5 on the third N-type gallium nitride layer 6 by adopting a vapor deposition method;
It is worth mentioning that the wafer obtained in step S1 can be annealed, and meanwhile, the wafer obtained in step S1 can be subjected to hydrofluoric acid to remove residual O and Mg on the surface of the epitaxial wafer;
in addition, a buffer layer 7 may be further provided between the substrate 8 and the third N-type gallium nitride layer 6. Typically, undoped gallium nitride may be used for buffer layer 7, and other nitrides or silicides may be used.
S2: sequentially growing a first P-type heavily doped gallium nitride layer, an unintentionally doped gallium indium nitride polarization layer 3, a second N-type heavily doped gallium nitride layer and a first N-type gallium nitride layer 1 on the second P-type gallium nitride layer 5 by adopting a molecular beam epitaxy MBE method; the result of step S2 is shown in FIG. 2-a.
S3: based on a mask, reserving a collector region, as shown in fig. 2-b, and sequentially etching and removing part of the first N-type gallium nitride layer 1, the second N-type heavily doped gallium nitride layer, the unintended doped gallium indium nitride polarization layer 3 and the first P-type heavily doped gallium nitride layer in a base region, as shown in fig. 2-c, and sequentially etching and removing part of the first N-type gallium nitride layer 1, the second N-type heavily doped gallium nitride layer, the unintended doped gallium indium nitride polarization layer 3, the first P-type heavily doped gallium nitride layer and the second P-type gallium nitride layer 5 in an emitter region;
S4: as shown in fig. 2-d, a collector metal contact layer 11 is formed in the collector region, a base metal contact layer 10 is formed in the base region, and an emitter metal contact layer 9 is formed in the emitter region.
It should be noted that the materials of the base metal contact layer 10 and the collector metal contact layer 11 may be semi-transparent nickel/gold metal stacks; typically, the translucent material may itself be a translucent material, or may be translucent through a hollowed-out or window design.
It is worth mentioning that the material of the emitter metal contact layer 9 includes, but is not limited to, molybdenum, tungsten, titanium, nickel, gold, silver, cadmium and platinum.
Typically, in step S4, the metal contact layer may be fabricated by using electron beam evaporation, sputtering, screen printing, and other techniques; meanwhile, from the aspect of addition and subtraction film generation, the whole layer of film can be coated, etching is performed, and the film can be directly coated on a local mask.
Further, optionally, the second N-type gallium nitride layer 2 and the first P-type gallium nitride layer 4 are doped with a high concentration, and the doping concentration is 1×10 18/cm 3 to 1×10 21/cm 3.
Preferably, in this embodiment, the doping concentration is 1X 10 20/cm 3.
Optionally, the second N-type gallium nitride layer 2 and the first P-type gallium nitride layer 4 are ultrathin gallium nitride layers, wherein the thickness of the second N-type gallium nitride layer 2 is 20nm-40nm, and the thickness of the first P-type gallium nitride layer 4 is 10nm-20nm, so as to form the TJ tunnel junction structure.
Preferably, in the present embodiment, the thickness of the second N-type gallium nitride layer 2 is 30nm, and the thickness of the first P-type gallium nitride layer 4 is 15nm.
Optionally, the thickness of the unintentionally doped gallium indium nitride polarizing layer 33 is an ultra-thin layer of 1nm-2 nm.
Preferably, in this embodiment, the thickness of the unintentionally doped gallium indium nitride polarizing layer 33 is 1.5nm.
Typically, the etching method in step S4 may employ ICP dry etching, exposure and development wet etching, or the like. In the ICP dry etching, a glass-based mask plate can be used for masking a relevant area.
The foregoing describes in detail preferred embodiments of the present invention. It should be understood that numerous modifications and variations can be made in accordance with the concepts of the invention by one of ordinary skill in the art without undue burden. Therefore, all technical solutions which can be obtained by logic analysis, reasoning or limited experiments based on the prior art by the person skilled in the art according to the inventive concept shall be within the scope of protection defined by the claims.
Claims (10)
1. A optoelectronically co-regulated hybrid tunnel junction bipolar transistor, the bipolar transistor comprising:
A substrate;
a third N-type gallium nitride layer arranged on the substrate;
A second P-type gallium nitride layer and an emitter metal contact layer 9 disposed on the substrate;
The base metal contact layer and the first P-type heavily doped gallium nitride layer are arranged on the second P-type gallium nitride layer;
The first P-type heavily doped gallium nitride layer is arranged on the first N-type heavily doped gallium nitride layer;
And a collector metal contact layer disposed on the first N-type gallium nitride layer;
the first P-type heavily doped gallium nitride layer, the unintended doped gallium indium nitride polarization layer, the second N-type heavily doped gallium nitride layer 2 and the first N-type gallium nitride layer are sequentially grown by a molecular beam epitaxy MBE.
2. A hybrid tunnel junction bipolar transistor according to claim 1 wherein a buffer layer is further disposed between said substrate and said third N-type gallium nitride layer.
3. A hybrid tunnel junction bipolar transistor according to claim 1 wherein said base metal contact layer and said collector metal contact layer are formed from a semi-transparent nickel/gold metal stack; the material of the emitter metal contact layer comprises molybdenum, tungsten, titanium, nickel, gold, silver, cadmium and platinum.
4. The optoelectric co-controlled hybrid tunnel junction bipolar transistor of claim 1 wherein said second N-type gallium nitride layer and said first P-type gallium nitride layer are doped at a high concentration of 1 x 1018/cm3 to 1 x 1021/cm3.
5. The hybrid tunnel junction bipolar transistor of claim 1 wherein said second N-type gallium nitride layer and said first P-type gallium nitride layer are ultra-thin gallium nitride layers, wherein said second N-type gallium nitride layer has a thickness of 20nm-40nm and said first P-type gallium nitride layer has a thickness of 10nm-20nm, thereby forming a TJ tunnel junction structure.
6. A photovoltaically co-controlled hybrid tunnel junction bipolar transistor according to claim 1 wherein said unintentionally doped gallium indium nitride polarization layer 3 is an ultra thin layer having a thickness of 1nm-2 nm.
7. The preparation method of the photoelectric co-regulation hybrid tunnel junction bipolar transistor is characterized by comprising the following steps of:
s1: depositing a third N-type gallium nitride layer on the substrate by adopting a vapor deposition method, and depositing a second P-type gallium nitride layer on the third N-type gallium nitride layer by adopting a vapor deposition method;
S2: sequentially growing a first P-type heavily doped gallium nitride layer, an unintended doped gallium indium nitride polarization layer, a second N-type heavily doped gallium nitride layer and a first N-type gallium nitride layer on the second P-type gallium nitride layer by adopting a molecular beam epitaxy MBE method;
S3: based on a mask, reserving a collector region, sequentially etching and removing part of the first N-type gallium nitride layer, the second N-type heavily doped gallium nitride layer, the unintended doped gallium indium nitride polarization layer and the first P-type heavily doped gallium nitride layer in a base region, and sequentially etching and removing part of the first N-type gallium nitride layer, the second N-type heavily doped gallium nitride layer, the unintended doped gallium indium nitride polarization layer, the first P-type heavily doped gallium nitride layer and the second P-type gallium nitride layer in an emitter region;
S4: a collector metal contact layer is formed in the collector region, a base metal contact layer is formed in the base region, and an emitter metal contact layer is formed in the emitter region.
8. The method of claim 7, wherein the second N-type gallium nitride layer and the first P-type gallium nitride layer are doped with a high concentration of 1 x 1018/cm3 to 1 x 1021/cm3.
9. The method for manufacturing a hybrid tunnel junction bipolar transistor according to claim 7, wherein the second N-type gallium nitride layer and the first P-type gallium nitride layer are ultra-thin gallium nitride layers, wherein the thickness of the second N-type gallium nitride layer is 20nm-40nm, and the thickness of the first P-type gallium nitride layer is 10nm-20nm, so that a TJ tunnel junction structure is formed.
10. The method for manufacturing the photoelectric co-regulation and control hybrid tunnel junction bipolar transistor according to claim 7, wherein the thickness of the unintentionally doped gallium indium nitride polarization layer 3 is 1nm-2nm ultrathin layer.
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