CN118315290A - Process for removing glue overflow in flip chip packaging - Google Patents
Process for removing glue overflow in flip chip packagingInfo
- Publication number
- CN118315290A CN118315290A CN202410725212.XA CN202410725212A CN118315290A CN 118315290 A CN118315290 A CN 118315290A CN 202410725212 A CN202410725212 A CN 202410725212A CN 118315290 A CN118315290 A CN 118315290A
- Authority
- CN
- China
- Prior art keywords
- filling glue
- flowing
- glue
- wafer
- mixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003292 glue Substances 0.000 title claims abstract description 196
- 238000000034 method Methods 0.000 title claims abstract description 58
- 230000008569 process Effects 0.000 title claims abstract description 32
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 16
- 238000011049 filling Methods 0.000 claims abstract description 179
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 51
- 239000000463 material Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 24
- 239000003822 epoxy resin Substances 0.000 claims abstract description 23
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 23
- 239000000945 filler Substances 0.000 claims abstract description 20
- -1 amine compounds Chemical class 0.000 claims abstract description 19
- 238000000576 coating method Methods 0.000 claims abstract description 18
- 239000011248 coating agent Substances 0.000 claims abstract description 17
- 230000009969 flowable effect Effects 0.000 claims abstract description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 14
- 238000003466 welding Methods 0.000 claims abstract description 14
- 239000000126 substance Substances 0.000 claims abstract description 13
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 13
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 12
- 239000012752 auxiliary agent Substances 0.000 claims abstract description 8
- 238000002360 preparation method Methods 0.000 claims abstract description 7
- 229920005989 resin Polymers 0.000 claims abstract description 7
- 239000011347 resin Substances 0.000 claims abstract description 7
- 238000005520 cutting process Methods 0.000 claims abstract description 6
- GGHPAKFFUZUEKL-UHFFFAOYSA-M sodium;hexadecyl sulfate Chemical compound [Na+].CCCCCCCCCCCCCCCCOS([O-])(=O)=O GGHPAKFFUZUEKL-UHFFFAOYSA-M 0.000 claims abstract description 6
- 229940080236 sodium cetyl sulfate Drugs 0.000 claims abstract description 4
- 150000001642 boronic acid derivatives Chemical class 0.000 claims abstract description 3
- 239000004952 Polyamide Substances 0.000 claims description 19
- 229920002647 polyamide Polymers 0.000 claims description 19
- 239000002313 adhesive film Substances 0.000 claims description 14
- 230000001681 protective effect Effects 0.000 claims description 13
- 239000002994 raw material Substances 0.000 claims description 13
- 238000003756 stirring Methods 0.000 claims description 13
- 239000000853 adhesive Substances 0.000 claims description 11
- 230000001070 adhesive effect Effects 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 11
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 8
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 8
- 239000005011 phenolic resin Substances 0.000 claims description 8
- 229920001568 phenolic resin Polymers 0.000 claims description 8
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 claims description 7
- 229910021538 borax Inorganic materials 0.000 claims description 5
- 235000010339 sodium tetraborate Nutrition 0.000 claims description 5
- BSVBQGMMJUBVOD-UHFFFAOYSA-N trisodium borate Chemical compound [Na+].[Na+].[Na+].[O-]B([O-])[O-] BSVBQGMMJUBVOD-UHFFFAOYSA-N 0.000 claims description 5
- HBGPNLPABVUVKZ-POTXQNELSA-N (1r,3as,4s,5ar,5br,7r,7ar,11ar,11br,13as,13br)-4,7-dihydroxy-3a,5a,5b,8,8,11a-hexamethyl-1-prop-1-en-2-yl-2,3,4,5,6,7,7a,10,11,11b,12,13,13a,13b-tetradecahydro-1h-cyclopenta[a]chrysen-9-one Chemical compound C([C@@]12C)CC(=O)C(C)(C)[C@@H]1[C@H](O)C[C@]([C@]1(C)C[C@@H]3O)(C)[C@@H]2CC[C@H]1[C@@H]1[C@]3(C)CC[C@H]1C(=C)C HBGPNLPABVUVKZ-POTXQNELSA-N 0.000 claims description 3
- PFRGGOIBYLYVKM-UHFFFAOYSA-N 15alpha-hydroxylup-20(29)-en-3-one Natural products CC(=C)C1CCC2(C)CC(O)C3(C)C(CCC4C5(C)CCC(=O)C(C)(C)C5CCC34C)C12 PFRGGOIBYLYVKM-UHFFFAOYSA-N 0.000 claims description 3
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 claims description 3
- SOKRNBGSNZXYIO-UHFFFAOYSA-N Resinone Natural products CC(=C)C1CCC2(C)C(O)CC3(C)C(CCC4C5(C)CCC(=O)C(C)(C)C5CCC34C)C12 SOKRNBGSNZXYIO-UHFFFAOYSA-N 0.000 claims description 3
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 claims description 3
- WYXIGTJNYDDFFH-UHFFFAOYSA-Q triazanium;borate Chemical compound [NH4+].[NH4+].[NH4+].[O-]B([O-])[O-] WYXIGTJNYDDFFH-UHFFFAOYSA-Q 0.000 claims description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 2
- 229910021487 silica fume Inorganic materials 0.000 claims 1
- 238000002156 mixing Methods 0.000 abstract description 3
- 230000000181 anti-adherent effect Effects 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000002035 prolonged effect Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000005543 nano-size silicon particle Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- MKUXAQIIEYXACX-UHFFFAOYSA-N aciclovir Chemical compound N1C(N)=NC(=O)C2=C1N(COCCO)C=N2 MKUXAQIIEYXACX-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003916 ethylene diamine group Chemical group 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Abstract
The invention belongs to the technical field of flip chips, and particularly relates to a process method for removing glue overflow in flip chip packaging. The process method comprises the following steps: carrying out bump process preparation on the front surface of the wafer, and adhering a film material on the back surface of the wafer with bumps; cutting the wafer into single chips; coating filling glue on the substrate, wherein the filling glue comprises non-flowing filling glue, mixed filling glue and flowing filling glue, and the coating positions of the filling glue on the substrate are sequentially from outside to inside; placing the chip on a substrate and welding; removing the film material on the chip; non-flowing filler gum: thermosetting resin and auxiliary agent; the auxiliary agent comprises borate compounds, organic amine compounds and sodium cetyl sulfate; and (3) flowing filling glue: epoxy resin II, a curing agent and a silicon dioxide-containing substance; mixing filling glue: a non-flowable filler gum, a flowable filler gum, and a compatibilizer. The invention can reduce the occurrence of glue overflow in flip chip packaging and reduce the difficulty of removing the glue overflow.
Description
Technical Field
The invention belongs to the technical field of flip chips, and particularly relates to a process method for removing glue overflow in flip chip packaging.
Background
Flip chip packaging is to electrically interconnect the die and the substrate by way of an area array pad connection. The process flow mainly comprises chip bump preparation, surface mounting, UF filling and the like, wherein the glue filling process is a very critical core process, plays roles of fixing bumps and buffering stress, and increases the reliability of the device. However, during the process of filling the glue, the glue may climb to the top of the chip along the edge of the chip due to the phenomenon of glue overflow caused by various factors, thereby affecting the flatness of the chip surface and the stacking of multiple chips.
Aiming at the glue overflow condition of the filling glue, the prior art mainly solves the problem from two directions. The method comprises the steps of adjusting UF filling technology, such as reasonably designing the size and the spacing of the convex points, optimizing filling speed, replacing UF materials with better fluidity, and the like. In the prior art, the flowable filling glue is replaced by the non-flowable filling glue, and the non-flowable filling glue has the defects that a higher curing temperature is required, larger thermal stress is generated, the chip is easy to break, and the non-flowable filling glue is not suitable for being applied to the excessively large and excessively thin chip. And secondly, removing external force aiming at glue overflow. The difficulty of removing glue adhered to the top and the side of the chip by means of external force is high, and the problems of uncleanness in removal and the like can occur.
Disclosure of Invention
The invention aims to provide a process method for removing glue overflow in flip chip packaging, which has the advantages of reducing the occurrence of glue overflow and reducing the difficulty of removing the glue overflow.
To achieve the above and other related objects, the present invention provides the following technical solutions:
the invention provides a process method for removing glue overflow in flip chip packaging, which comprises the following steps:
Performing bump process preparation on the front surface of the wafer to obtain a wafer with bumps;
Adhering a film material on the back of the wafer with the bumps;
cutting the wafer into single chips;
coating filling glue on the substrate, wherein the filling glue comprises non-flowing filling glue, mixed filling glue and flowing filling glue, and the coating positions of the filling glue on the substrate are sequentially from outside to inside, and the non-flowing filling glue, the mixed filling glue and the flowing filling glue are sequentially formed; then placing the chip on a substrate and welding;
removing the film material on the chip;
The non-flowing filling glue comprises the following raw materials:
thermosetting resin and auxiliary agent; the auxiliary agent comprises at least one of borate compounds, organic amine compounds and sodium cetyl sulfate;
the flowing filling glue comprises the following raw materials: epoxy resin II, a curing agent and a silicon dioxide-containing substance;
the mixed filling glue comprises at least one of the non-flowing filling glue, the flowing filling glue and a compatilizer.
In one embodiment of the present invention, the method comprises the following steps:
Preparing non-flowing filling glue, mixed filling glue and flowing filling glue respectively;
Performing bump process preparation on the front surface of the wafer to obtain a wafer with bumps;
Adhering a film material on the back of the wafer with the bumps;
cutting the wafer into single chips;
Coating the non-flowing filling glue on a non-flowing filling glue area 1 at the outermost periphery of the substrate according to the shape of a Chinese character 'Hui', coating the mixed filling glue on a mixed filling glue area 2 adjacent to the non-flowing filling glue area 1, and coating the flowing filling glue on a remaining non-coated flowing filling glue area 3, wherein the coating height of the flowing filling glue is 3-10 mu m higher than that of the mixed filling glue, and the coverage rate of the filling glue on the substrate is more than or equal to 80%;
Then placing the chip on a substrate, welding, and curing the filling glue for less than or equal to 10 minutes;
And reducing the viscosity of the film material from the edge of the film material, and removing the film material on the chip and the glue overflow on the film material.
In one embodiment of the invention, the film material comprises a peelable film comprising at least one of a UV anti-adhesive film, a thermal adhesion protective film.
In an embodiment of the present invention, in the no-flow underfill, the thermosetting resin comprises epoxy resin one, thermosetting phenolic resin; the borate compound comprises at least one of sodium borate and ammonium borate; the organic amine compound comprises at least one of propylene diamine, ethylene diamine and isopropylamine.
It should be noted that the borate compound provides good welding performance for the non-flowing filler, the organic amine compound enhances the stability of the non-flowing filler, and the sodium cetyl sulfate enhances the wettability and oxidation resistance of the non-flowing filler. In the invention, the epoxy resin with high viscosity is selected as the epoxy resin, the thermosetting phenolic resin is selected as the phenolic resin, the fluidity of the high-viscosity epoxy resin is poor, the edge sealing capability can be improved, the thermosetting phenolic resin can properly balance the wettability of the non-flowing filling glue, and the filling glue is prevented from being broken after being cured.
In an embodiment of the present invention, in the flowable filling compound, the curing agent includes at least one of a polyamide compound and an imidazole compound; the polyamide compound comprises at least one of polyamide 650, polyamide 651 and polyamide 300; the imidazole compound comprises 2-ethyl 4-methylimidazole.
In an embodiment of the invention, the silica-containing material includes at least one of silica, nano silica and silica micropowder.
In an embodiment of the invention, the compatibilizer comprises at least one of EVA and MAH.
In an embodiment of the present invention, the non-flowing filling glue includes the following raw materials in parts by weight:
90-120 parts of thermosetting resin and 10-20 parts of auxiliary agent;
the flowing filling glue comprises the following raw materials in parts by weight:
80-100 parts of epoxy resin II, 50-70 parts of curing agent and 20-50 parts of silicon dioxide-containing substance;
In the mixed filling glue, the mass ratio of the non-flowing filling glue to the compatilizer is 1:0.5-0.9:0.1-0.3.
In an embodiment of the present invention, the preparation method of the non-flowing filling glue includes the following steps: stirring the raw materials at 30-80 ℃ for 3-10 min to obtain a non-flowing filling adhesive;
Preparing a flowing filling adhesive: stirring the epoxy resin II and the curing agent at 30-80 ℃ for 3-10 min, then adding the silicon dioxide-containing substance, and uniformly stirring to obtain the flowing filling glue;
preparing mixed filling glue: and taking the non-flowing filling glue and the flowing filling glue, and uniformly stirring at 5-20 ℃ to obtain the mixed filling glue.
The beneficial effects of the invention are as follows:
(1) The invention prepares the non-flowing filling glue, the mixed filling glue and the flowing filling glue, 1) the epoxy resin with high viscosity is selected as the epoxy resin, the phenolic resin is selected as the thermosetting phenolic resin, and the borate compound, the organic amine compound and the hexadecyl sodium sulfate are also added. 2) In the flowing filling glue, the raw materials comprise epoxy resin II, a curing agent and a silicon dioxide-containing substance, the epoxy resin II is low-viscosity epoxy resin, the leveling property and the fluidity are good, the curing time of the flowing filling glue is shortened by doping the curing agent, the bonding strength between the epoxy resin II and the curing agent is enhanced by adding the silicon dioxide-containing substance, gaps of a cross-linking structure can be complemented during curing, and the strength of the flowing filling glue is improved. 3) In the mixed filling glue, the raw materials are non-flowing filling glue, flowing filling glue and compatilizer, and in the invention, the mixed filling glue has good compatibility and is also equivalent to a buffer area, and because the raw materials are self-made filling glue, the compatibility with single non-flowing filling glue and single flowing filling glue is good, and the situations of glue overflow, filling glue residue and cracking caused by compatibility problems can be avoided. 4) The invention selects to add no silicon dioxide-containing substance into the non-flowing filling glue, thereby avoiding influencing the wettability during welding, but the non-adding of the silicon dioxide-containing substance can improve the expansion coefficient and reduce the adjusting capability of the non-flowing filling glue.
(2) In the process, the main technical points are that 1) the non-flowing filling glue is coated on a non-flowing filling glue area 1 at the outermost periphery of a substrate according to a shape of a Chinese character 'Hui', then the mixed filling glue is coated on a mixed filling glue area 2 adjacent to the non-flowing filling glue area 1, then the flowing filling glue is coated on a residual non-coated flowing filling glue area 3, the coating height of the flowing filling glue is higher than that of the mixed filling glue, and the coverage rate of the filling glue on the substrate is more than or equal to 80%; and then placing the chip on the substrate, wherein the chip is firstly contacted with the flowing filling glue in the central area, the chip can form an outward extrusion effect on the chip, the flowing filling glue flows outwards to the mixed filling glue area 2 in cooperation with the capillary action of the chip, the mixed filling glue area 2 is leveled, the height difference between the mixed filling glue area 2 and the flowing filling glue area 3 is filled, the non-flowing filling glue which is coated in advance plays a role of fixing the periphery of the substrate and is similar to an edge sealing, the filling glue in the substrate is prevented from overflowing, and meanwhile, the filling glue in the substrate is homogenized and the height is uniform. In addition, when the filler is cured, the non-flowing filler at the outermost periphery may first cure the part, and first play a role of fixing, similar to a skeleton, and even if the flowing filler flows in the range of the filler, the post-cured flowing filler cannot overflow because of the height difference between the flowing filler and the mixed filler, and can also generate 'reflux' to fill various gaps, and because the compatibility in the filler is good, the filler is ensured not to crack after curing. Furthermore, in the process, different curing temperatures do not need to be additionally set, so that the complexity of the process is reduced, and the convenience is improved. 2) The invention has the advantages that the strippable film is stuck on the back of the wafer, the wafer is protected, the overflowing glue is further completely removed, the invention selects the types of the strippable film, and the invention discovers that the UV anti-adhesive film and/or the thermal adhesion protective film can be selected, the area size of the strippable film is properly increased, the overflowing glue is also beneficial to removing, in addition, the strippable film can also improve the flatness of the back of the wafer, and the UV anti-adhesive film and the thermal adhesion protective film can be overlapped according to the actual follow-up process, or the stripping time of the strippable film is changed, so that the protection time of the wafer is prolonged.
(3) In the process of the invention, the curing time can be shortened by properly increasing the epoxy resin content, the compatilizer is preferably EVA, the borate compound is preferably sodium borate, the organic amine compound is preferably propylene diamine, the polyamide compound is preferably polyamide 300, and the silicon dioxide-containing substance is preferably nano silicon dioxide.
(4) In the process, no soldering flux is needed to be added first for welding, then the soldering flux is removed, then the bottom filling glue is added, and then the solidification is carried out.
In conclusion, the process of the invention can reduce the occurrence of glue overflow in flip chip packaging and reduce the difficulty of removing the glue overflow.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a coating process of example 1 of the present invention;
marked in the figure as: 1. a non-flowable underfill region; 2. mixing the glue filling areas; 3. and flowing the filling glue area.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Unless otherwise specified, the materials used in the examples are readily available from commercial companies.
Example 1
The technological method for removing the glue overflow in the flip chip packaging comprises the following steps:
(1) Referring to table 1, a non-flowable filler, a mixed filler, and a flowable filler were prepared, respectively.
TABLE 1
Preparing a non-flowing filling adhesive: and (3) adding epoxy resin I, thermosetting phenolic resin, sodium borate, propylene diamine and sodium hexadecyl sulfate into a reaction kettle, and stirring for 5min at 50 ℃ to obtain the non-flowing filling glue.
Preparing a flowing filling adhesive: and (3) putting epoxy resin II, polyamide 300 and 2-ethyl 4 methylimidazole into a reaction kettle, stirring for 5min at 40 ℃, putting nano silicon dioxide into the reaction kettle, and stirring for 3min to obtain the flowing filling glue.
Preparing mixed filling glue: and (3) placing the non-flowing filling glue, the flowing filling glue and EVA into a reaction kettle according to a ratio of 1:0.75:0.2, and uniformly stirring at 10 ℃ to obtain the mixed filling glue.
(2) The front surface of the wafer is prepared by a bump process to obtain a wafer with bumps, wherein the bump process is well known and is not a key step/does not affect the glue overflow process in the invention, so the process is not described in detail;
(3) Adhering a layer of film material on the back of the wafer with the salient points, wherein the film material is a UV anti-adhesive film (Suzhou ring-dimension film technology Co., ltd.), and the size of the film material is completely attached to the size of the back of the wafer;
(4) Then cutting the wafer into single chips;
(5) Referring to fig. 1, a non-flowing filling glue, a mixed filling glue and a flowing filling glue are respectively coated on a substrate, the positions of the non-flowing filling glue, the mixed filling glue and the flowing filling glue on the substrate are sequentially from outside to inside, the non-flowing filling glue is coated on a non-flowing filling glue area 1 at the outermost periphery of the substrate according to a shape like a Chinese character 'Hui', then the mixed filling glue is coated on a mixed filling glue area 2 adjacent to the non-flowing filling glue area 1, and then the flowing filling glue is coated on a remaining non-coated flowing filling glue area 3, wherein the coating height of the flowing filling glue is higher than 5 mu m of the mixed filling glue, the area of fig. 1 is defined for more visual display and limiting of a coating area, and in actual operation, the flowing of the filling glue is needed to be considered, the coverage rate of the filling glue is needed to be considered, and is generally satisfied with a coverage rate of more than or equal to 80%, in addition, the area ratio is controlled, and the non-flowing filling glue area 1 is not required to be: mixing and filling glue area 2: the area ratio of the flowing filling glue area 3 is 1:0.2-0.5:0.8-1.2, preferably 1:0.2-0.5:1-1.2;
(6) Then placing the chip on the substrate, wherein the chip is firstly contacted with the flowing filling glue in the central area, the chip can form an outward extrusion effect on the chip, the flowing filling glue flows outwards to the mixed filling glue area 2 in cooperation with the capillary action of the chip, the mixed filling glue area 2 is leveled, the height difference between the mixed filling glue area 2 and the flowing filling glue area 3 is filled, the non-flowing filling glue which is coated in advance plays a role of fixing the periphery of the substrate and is similar to an edge sealing, the filling glue in the substrate is prevented from overflowing, and meanwhile, the filling glue in the substrate is homogenized and the height is uniform;
(7) Then, welding is completed, welding parameters are adjusted according to actual requirements, and the welding step is not a key step/does not affect the glue overflow process, so that the method is not described in detail, and the fact that the filling glue on the substrate is completely solidified in the welding process is required, and the solidifying time is less than or equal to 10min;
(8) After the welding is finished, removing the film material (UV anti-adhesive film) on the chip, specifically, observing the UV anti-adhesive film, irradiating UV on the edge of the UV anti-adhesive film which is not stained with the overflow adhesive, slightly lifting the UV anti-adhesive film, peeling at the moment, and peeling if the overflow adhesive is stained on the UV anti-adhesive film.
Example 2
In this embodiment, unlike embodiment 1, the steps of:
(3) A layer of film material is adhered to the back of the wafer with the bumps, the film material is a UV anti-adhesive film (Suzhou ring-dimension film technology Co., ltd.), the area size of the film material is larger than that of the back of the wafer, and the excess area is controlled to be 1-50 mu m 2.
The remaining steps were the same as in example 1.
Analysis of results: when the area of the film material is larger than that of the back surface of the wafer, the UV illumination time in the step (8) can be shortened, and the film material and the glue overflow are easier to peel off.
Example 3
In this embodiment, unlike embodiment 1, the steps of:
(3) And (3) adhering a layer of film material on the back of the wafer with the bumps, wherein the film material is a thermal adhesion protective film (Suzhou Cyclovir film technology Co., ltd.), and the size of the film material is completely attached to the size of the back of the wafer.
(8) After the welding is finished, removing the film material (thermal adhesion protective film) on the chip, specifically, observing the thermal adhesion protective film, heating the edge of the thermal adhesion protective film without being stained with the overflow glue for 30s at 90 ℃, reducing the viscosity of the thermal adhesion protective film, slightly lifting, peeling at the moment, and peeling together if the thermal adhesion protective film is stained with the overflow glue.
The remaining steps were the same as in example 1.
It should be noted that the invention discovers that the peelable film can also improve the flatness of the back surface of the wafer, and can use the UV anti-adhesive film and the thermal adhesive protective film in a superimposed manner (such as attaching a layer of thermal adhesive protective film after attaching the UV anti-adhesive film), wherein the thermal adhesive protective film is used for avoiding the influence of glue overflow, the UV anti-adhesive film is used for avoiding the influence of the subsequent process, and the mode of reducing the viscosity of different peelable films is different to the greatest extent), or the peeling time of the peelable film is prolonged, and the protection time of the wafer is prolonged.
Example 4
In this example, when preparing a no-flow underfill, the weight of epoxy resin one was increased to 55 parts, and the rest of the procedure was the same as in example 1.
Example 5
In this example, when preparing the hybrid filler: and (3) placing the non-flowing filling glue and the flowing filling glue into a reaction kettle according to the ratio of 1:0.75:0.2, and uniformly stirring at 10 ℃ to obtain the mixed filling glue. The remaining steps were the same as in example 1.
Example 6
In this example, polyamide 300 was replaced with polyamide 650, and the rest of the procedure was the same as in example 1.
Example 7
In this example, polyamide 300 was replaced with polyamide 651, and the remaining steps were the same as in example 1.
Example 8
In this example, the nanosilica was replaced with silica, and the rest of the procedure was the same as in example 1.
Example 9
In this example, the nano silica was replaced with the fine silica powder, and the rest of the procedure was the same as in example 1.
Example 10
In this example, sodium nanoborate was replaced with ammonium borate, and the rest of the procedure was the same as in example 1.
Example 11
In this example, propylenediamine was replaced with ethylenediamine, and the rest of the procedure was the same as in example 1.
Example 12
In this example, propylenediamine was replaced with isopropylamine, and the rest of the procedure was the same as in example 1.
And (3) detection: the curing time of step (7) was recorded, and the curing time was based on example 1, and the results were shown in table 2 below.
TABLE 2
Analysis of results: referring to table 2, in the process of the present invention, the curing time can be shortened by properly increasing the epoxy resin content, the compatibilizer is preferably EVA, the borate compound is preferably sodium borate, the organic amine compound is preferably propylene diamine, the polyamide compound is preferably polyamide 300, and the silica-containing substance is preferably nano silica.
The foregoing description is only a preferred embodiment of the present invention, and the present invention is not limited thereto, but it is to be understood that modifications and equivalents of some of the technical features described in the foregoing embodiments may be made by those skilled in the art, although the present invention has been described in detail with reference to the foregoing embodiments. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. The process method for removing the glue overflow in the flip chip packaging is characterized by comprising the following steps of:
Performing bump process preparation on the front surface of the wafer to obtain a wafer with bumps;
Adhering a film material on the back of the wafer with the bumps;
cutting the wafer into single chips;
coating filling glue on the substrate, wherein the filling glue comprises non-flowing filling glue, mixed filling glue and flowing filling glue, and the coating positions of the filling glue on the substrate are sequentially from outside to inside, and the non-flowing filling glue, the mixed filling glue and the flowing filling glue are sequentially formed; then placing the chip on a substrate and welding;
removing the film material on the chip;
The non-flowing filling glue comprises the following raw materials:
thermosetting resin and auxiliary agent; the auxiliary agent comprises at least one of borate compounds, organic amine compounds and sodium cetyl sulfate;
the flowing filling glue comprises the following raw materials: epoxy resin II, a curing agent and a silicon dioxide-containing substance;
the mixed filling glue comprises at least one of the non-flowing filling glue, the flowing filling glue and a compatilizer.
2. The method for removing flash in a flip chip package of claim 1, comprising the steps of:
Preparing non-flowing filling glue, mixed filling glue and flowing filling glue respectively;
Performing bump process preparation on the front surface of the wafer to obtain a wafer with bumps;
Adhering a film material on the back of the wafer with the bumps;
cutting the wafer into single chips;
Coating the non-flowing filling glue on a non-flowing filling glue area (1) at the outermost periphery of the substrate, coating the mixed filling glue on a mixed filling glue area (2) adjacent to the non-flowing filling glue area (1), and coating the flowing filling glue on the remaining non-coated flowing filling glue area (3), wherein the coating height of the flowing filling glue is 3-10 mu m higher than that of the mixed filling glue, and the coverage rate of the filling glue on the substrate is more than or equal to 80%;
Then placing the chip on a substrate, welding, and curing the filling glue for less than or equal to 10 minutes;
And reducing the viscosity of the film material from the edge of the film material, and removing the film material on the chip and the glue overflow on the film material.
3. The method of claim 1, wherein the film material comprises a peelable film comprising at least one of a UV-anti-adhesive film and a thermal-adhesion protective film.
4. The method of claim 1, wherein the thermosetting resin comprises epoxy resin one, thermosetting phenolic resin; the borate compound comprises at least one of sodium borate and ammonium borate; the organic amine compound comprises at least one of propylene diamine, ethylene diamine and isopropylamine.
5. The method for removing flash in flip chip packaging according to claim 1, wherein the curing agent comprises at least one of a polyamide compound and an imidazole compound in the flowable filling compound; the polyamide compound comprises at least one of polyamide 650, polyamide 651 and polyamide 300; the imidazole compound comprises 2-ethyl 4-methylimidazole.
6. The method for removing flash in flip chip packaging of claim 1, wherein the silica-containing material comprises at least one of silica, nano-silica, and micro-silica.
7. The method of claim 1, wherein the compatibilizer comprises at least one of EVA and MAH.
8. The process for removing flash in flip chip packaging of claim 1, wherein the non-flowable filler comprises the following raw materials in parts by weight:
90-120 parts of thermosetting resin and 10-20 parts of auxiliary agent;
the flowing filling glue comprises the following raw materials in parts by weight:
80-100 parts of epoxy resin II, 50-70 parts of curing agent and 20-50 parts of silicon dioxide-containing substance.
9. The method for removing flash in flip chip packaging according to claim 1, wherein the mass ratio of the non-flowable filling compound to the compatilizer in the mixed filling compound is 1:0.5-0.9:0.1-0.3.
10. The method for removing flash in flip chip packaging according to claim 1, wherein the method for preparing the non-flowable filling compound comprises the following steps: stirring the raw materials at 30-80 ℃ for 3-10 min to obtain a non-flowing filling adhesive;
Preparing a flowing filling adhesive: stirring the epoxy resin II and the curing agent at 30-80 ℃ for 3-10 min, then adding the silicon dioxide-containing substance, and uniformly stirring to obtain the flowing filling glue;
preparing mixed filling glue: and taking the non-flowing filling glue and the flowing filling glue, and uniformly stirring at 5-20 ℃ to obtain the mixed filling glue.
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CN118315290A true CN118315290A (en) | 2024-07-09 |
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