CN118300585A - IPM (intelligent platform management module) based on power-on reset control, recovery control method and IPM control system - Google Patents

Abstract

The application provides an IPM, a recovery control method and an IPM control system based on power-on reset control, wherein the IPM is provided with a circuit protection and power-on reset circuit in a high-side driving chip, so that the high-side IGBT can realize automatic recovery of power supply when the high-side IGBT is electrified while the abnormal state of the high-side IGBT can be rapidly protected, and the problems that a high-side power switch element cannot be timely recovered to operate and the performance and stability of the whole IPM circuit are affected can be effectively solved. In addition, the detection circuit, the circuit protection and the power-on reset circuit in the embodiment are integrated in the high-side driving chip, an additional terminal is not required to be added to receive an external detection signal or a recovery signal, and meanwhile, the small-size packaging requirement of the IPM is met.

Description

IPM (intelligent platform management module) based on power-on reset control, recovery control method and IPM control system

Technical Field

Embodiments of the application relate to integrated circuit technology. And more particularly, to an IPM based on power-on reset control, a recovery control method, and an IPM control system.

Background

Intelligent power modules (INTELLIGENT POWER MODULE, IPM for short) are commonly used in three-phase inverter circuits for household appliances, industrial machines, and on-board products. Since IPM is often used at high voltage and high current, excessive energy (current) may turn on the damage of the power switching element when an abnormal state (e.g., a load short-circuit or the like) occurs. Therefore, it is necessary to protect the power switching element from current in a timely manner in the abnormal state of the power switching element.

In view of the problem that when the driving chips (INTEGRATED CIRCUIT CHIP, IC) in the IPM are separated on the high side and the low side, the detection of the abnormal state on the high side generally depends on the external microcomputer control to output the corresponding control signal, and the delay time from the detection of the power-on stop of the actual power switching element is long, which easily leads to damage due to exceeding the damage tolerance range of the power switching element, it is proposed in the related art to provide a detection circuit on the high side, and to realize the protection control of the high side power switching element by detecting the potential change of the output terminal of the high side power switching element and shutting off the high side power switching element by using the potential change.

However, the above related art may cause the high-side power switch element to be in a protection state for too long, and the normal operation of the high-side power element of the IPM cannot be recovered in time, which will cause the IPM to fail to work normally, thereby affecting the performance and stability of the whole system. Therefore, it is needed to provide a technical solution capable of timely recovering the operation of the high-side power device.

Disclosure of Invention

The embodiment of the application provides an IPM (intelligent power module) based on power-on reset control, a recovery control method and an IPM control system, wherein a circuit protection and power-on reset circuit is added in a high-side driving chip, so that the operation of a high-side power element of the IPM can be recovered in time after the abnormality of the high-side power element is detected and the high-side power element enters a protection state.

In a first aspect, an embodiment of the present application provides an intelligent power module IPM, including a first IGBT tube, a high side driving chip for driving the first IGBT tube to turn on or off, a second IGBT tube, and a low side driving chip for driving the first IGBT tube to turn on or off; the high-side driving chip comprises a signal input end, a detection circuit, a circuit protection and power-on reset circuit and a high-side driving module electrically connected with the grid electrode of the first IGBT tube;

One end of the detection circuit is connected to a wire connected between the first IGBT tube and the second IGBT tube, and the other end of the detection circuit is connected to a circuit protection and power-on reset circuit, and is used for detecting emitter potential change of the first IGBT tube and outputting a first protection signal to the circuit protection and power-on reset circuit according to the emitter potential change;

The circuit protection and power-on reset circuit is characterized in that one end of the circuit protection and power-on reset circuit is respectively connected to the detection circuit and the signal input end, the other end of the circuit protection and power-on reset circuit is connected to the high-side driving module, and the circuit protection and power-on reset circuit is used for outputting a first cutting-off signal to the high-side driving module when receiving a first protection signal transmitted by the detection circuit so as to cut off the power on of the first IGBT tube, so that the first IGBT tube is in a current protection state; and the power-on reset signal is used for resetting the initial state of the circuit protection and power-on reset circuit, so that the first protection signal is invalid, and a first driving signal received from the signal input end is transmitted to the high-side driving module, so that the high-side driving module drives the first IGBT tube to be turned on or turned off according to the first driving signal.

In one embodiment, the circuit protection and power-on reset circuit includes an analog switch, a latch, and an and gate;

The analog switch is connected to the detection circuit and the signal input end at one end, is connected to one end of the latch at the other end, and is used for receiving the first driving signal transmitted by the signal input end, and conducting connection with the detection circuit when the first driving signal is a signal for conducting the first IGBT tube, and receiving and transmitting the first protection signal and the first driving signal to the latch;

The latch is connected to the high-side driving module and the AND gate at the other end, and is used for latching the first protection signal when receiving the first protection signal, and is used for receiving a power-on reset signal sent by the high-side driving module so that the latched first protection signal is invalid;

And one end of the AND gate is connected with the latch and the signal input end, the other end of the AND gate is connected with the high-side driving module, when the first protection signal in the latch is effective, the AND gate transmits the first cutting-off signal to the high-side driving module so as to cut off the electrifying of the first IGBT tube, so that the first IGBT tube is in a protection state, and when the first protection signal in the latch fails, the first driving signal of the signal input end is output to the high-side driving module, so that the high-side driving module drives the first IGBT tube to be turned on or off according to the first driving chip.

In one embodiment, the signal input end is further configured to transmit a second driving signal for turning off the first IGBT tube to the circuit protection and power-on reset circuit when the first IGBT tube is powered on again, so that the circuit protection and power-on reset circuit resumes driving control of the first IGBT tube based on the second driving signal when the power supply is restarted.

In one embodiment, a filter circuit is further included;

And one end of the filter circuit is connected to the signal input end, and the other end of the filter circuit is connected to the circuit protection and power-on reset circuit, so that the circuit protection and power-on reset circuit filters the first driving signal through the filter circuit and receives the filtered first driving signal.

In one embodiment, the high-side driving chip further includes a level conversion circuit, one end of the level conversion circuit is connected to the circuit protection and power-on reset circuit, and the other end of the level conversion circuit is connected to the high-side driving module, so that after the high-side driving module performs level conversion on the first driving signal transmitted by the circuit protection and power-on reset circuit through the level conversion circuit, the first IGBT tube is driven to be turned on or off based on the first driving signal after the level conversion.

In one embodiment, the high-side driving chip further includes a second power supply terminal and a pull-up resistor, one end of the pull-up resistor is connected to the second power supply terminal, and the other end of the pull-up resistor is connected to the circuit protection and power-on reset circuit, so that the circuit protection and power-on reset circuit maintains a signal state corresponding to the pull-up resistor when the circuit protection and power-on reset circuit is not connected.

In one embodiment, the device further comprises a third IGBT tube and a fourth IGBT tube, wherein the collector of the third IGBT tube is connected to the first power supply terminal, the emitter of the fourth IGBT tube is grounded, and the emitter of the third IGBT tube is electrically connected to the collector of the fourth IGBT tube, so that the third IGBT tube and the fourth IGBT tube are connected in series; the high-side driving chip is also connected with the grid electrode of the third IGBT tube;

One end of the detection circuit is also connected to a wire connected between the third IGBT tube and the fourth IGBT tube, and is used for detecting emitter potential change of the third IGBT tube and outputting a second protection signal to the circuit protection and power-on reset circuit according to the emitter potential change;

The other end of the circuit protection and power-on reset circuit is also connected to the high-side driving module and is used for outputting a second cut-off signal to the high-side driving module when receiving a second protection signal transmitted by the detection circuit so as to cut off the power on of the third IGBT tube, so that the third IGBT tube is in a current protection state; the power-on reset signal is used for resetting the initial state of the circuit protection and power-on reset circuit, so that the second protection signal is invalid, and a second driving signal received from the signal input end is transmitted to the high-side driving module, so that the high-side driving module drives the third IGBT to be turned on or turned off according to the second driving signal;

The low-side driving chip is also electrically connected with the fourth IGBT tube and used for driving the fourth IGBT tube to be turned on or turned off.

In a second aspect, an embodiment of the present application provides a recovery control method for an IPM, including a first IGBT tube, a high side driving chip for driving the first IGBT tube to turn on or off, a second IGBT tube, and a low side driving chip for driving the first IGBT tube to turn on or off; the high-side driving chip comprises a signal input end, a detection circuit, a circuit protection and power-on reset circuit and a high-side driving module electrically connected with the grid electrode of the first IGBT tube; the method comprises the following steps:

The detection circuit detects emitter potential change of the first IGBT tube and outputs a first protection signal to the circuit protection and power-on reset circuit according to the emitter potential change;

When the circuit protection and power-on reset circuit receives a first protection signal transmitted by the detection circuit, a first cut-off signal is output to the high-side driving module so as to cut off the power on of the first IGBT tube, and the first IGBT tube is in a current protection state;

the circuit protection and power-on reset circuit receives a power-on reset signal when the first IGBT tube is powered on again, and the power-on reset signal is used for resetting the initial state of the circuit protection and power-on reset circuit, so that the first protection signal is invalid, and a first driving signal received from the signal input end is transmitted to the high-side driving module, so that the high-side driving module drives the first IGBT tube to be turned on or turned off according to the first driving signal.

In a third aspect, an embodiment of the present application provides a computer readable storage medium, where computer executable instructions are stored on the computer readable storage medium, and when the computer executable instructions are executed by a processor, the method for controlling recovery of an IPM is implemented.

In a fourth aspect, an embodiment of the present application provides an IPM control system, including the IPM and a load device, where the load device is electrically connected to the first IGBT tube.

The IPM comprises a first IGBT tube, a high-side driving chip for driving the first IGBT tube to be turned on or turned off, a second IGBT tube and a low-side driving chip for driving the first IGBT tube to be turned on or turned off; the high-side driving chip comprises a signal input end, a detection circuit, a circuit protection and power-on reset circuit and a high-side driving module electrically connected with the grid electrode of the first IGBT tube. And one end of the detection circuit is connected to a wire connected between the first IGBT tube and the second IGBT tube, and the other end of the detection circuit is connected to the circuit protection and power-on reset circuit and is used for detecting the emitter potential change of the first IGBT tube and outputting a first protection signal to the circuit protection and power-on reset circuit according to the emitter potential change. And one end of the circuit protection and power-on reset circuit is respectively connected to the detection circuit and the signal input end, the other end of the circuit protection and power-on reset circuit is connected to the high-side driving module, and the circuit protection and power-on reset circuit is used for outputting a first cutting-off signal to the high-side driving module when receiving a first protection signal transmitted by the detection circuit so as to cut off the power on of the first IGBT tube, enabling the first IGBT tube to be in a current protection state and receiving a power-on reset signal when the first IGBT tube is powered on again, enabling the first protection signal to be invalid, and transmitting a first driving signal received from the signal input end to the high-side driving module so as to enable the high-side driving module to drive the first IGBT tube to be turned on or off according to the first driving signal. In the process, the circuit protection and power-on reset circuit is arranged in the high-side driving chip, so that the problem that the performance and stability of the whole IPM circuit are affected because the high-side power switch element cannot be timely restored can be effectively solved when the high-side IGBT tube is electrified and the high-side IGBT tube can be automatically restored when the high-side IGBT tube is electrified. In addition, the detection circuit, the circuit protection and the power-on reset circuit in the embodiment are integrated in the high-side driving chip, an additional terminal is not required to be added to receive an external detection signal or a recovery signal, and meanwhile, the small-size packaging requirement of the IPM is met.

Drawings

In order to more clearly illustrate the embodiments of the present application or the implementation of the related art, the drawings that are required for the embodiments or the related art description will be briefly described, and it is apparent that the drawings in the following description are some embodiments of the present application and that other drawings may be obtained according to these drawings for a person having ordinary skill in the art.

FIG. 1 is a schematic diagram of an IPM based on power-on reset control according to an embodiment of the present application;

FIG. 2a is a schematic diagram of the circuit protection and power-on reset circuit 124 of FIG. 1;

FIG. 2b is a timing diagram of an IPM based power-on-reset control in accordance with an embodiment of the present application;

FIG. 3 is a schematic diagram of the detection circuit 123 in FIG. 1;

FIG. 4 is a second schematic diagram of the detection circuit 123 in FIG. 1;

fig. 5 is a schematic structural diagram of the driving chip 120 in fig. 1;

FIG. 6 is a second schematic diagram of an IPM based on power-on-reset control according to an embodiment of the present application;

FIG. 7 is a flowchart illustrating a method for controlling recovery of an IPM according to an embodiment of the present application;

fig. 8 is a schematic structural diagram of an IPM control system according to an embodiment of the present application.

Detailed Description

For the purposes of making the objects, embodiments and advantages of the present application more apparent, an exemplary embodiment of the present application will be described more fully hereinafter with reference to the accompanying drawings in which exemplary embodiments of the application are shown, it being understood that the exemplary embodiments described are merely some, but not all, of the examples of the application.

It should be noted that the brief description of the terminology in the present application is for the purpose of facilitating understanding of the embodiments described below only and is not intended to limit the embodiments of the present application. Unless otherwise indicated, these terms should be construed in their ordinary and customary meaning.

Furthermore, the terms "comprise" and "have," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a product or apparatus that comprises a list of elements is not necessarily limited to those elements expressly listed, but may include other elements not expressly listed or inherent to such product or apparatus.

The power switching elements used in IPM, such as insulated gate bipolar transistors (Insulated Gate Bipolar Transistor, IGBT transistors), have the advantages of high current density, low saturation voltage and high voltage resistance of high power transistors (Giant transistors, GTR), and the advantages of high input impedance, high switching frequency and low driving power of field effect transistors (FIELD EFFECT transistors, MOSFETs). The existing IPM is internally integrated with logic, control, detection and protection circuits (arranged in a low-side driving chip), is convenient to use, not only reduces the volume and development time of the system, but also greatly enhances the reliability of the system, and is suitable for the development direction of the current power devices, namely a modularized, compound and power integrated circuit (PowerIntegrated Circuit, PIC), so that the IPM is commonly applied to circuit structures with high current and high voltage. When an abnormality occurs in the load, such as a load short circuit, the IGBT may flow an excessive current exceeding the rated value, which may cause damage to the IGBT.

In the related art, considering that when a driving chip (INTEGRATED CIRCUIT CHIP, IC) in an IPM is separated on a high side and a low side, detection of an abnormal state on the high side generally depends on an external microcomputer control to output a corresponding control signal, a delay time from detection of an actual IGBT tube power-on stop is long from a (low side protection circuit), and damage due to exceeding a damage tolerance range of the IGBT tube is liable to occur, it is proposed in the related art to provide a detection circuit on the high side, and to cut off the high side IGBT tube by using the potential change of the high side IGBT tube output end to realize rapid protection control of the high side IGBT tube. Although the above related art solves the problem that the high-side IGBT tube can quickly enter the current protection state to avoid the damage of the IGBT tube, the high-side IGBT tube may be in the current protection state for a long time, if the abnormal situation disappears (for example, the load short circuit fault is eliminated), the power-on operation of the high-side power element of the IPM cannot be recovered in time, which causes the IPM to fail to work normally, thereby affecting the performance and stability of the whole circuit.

In view of the above, an embodiment of the present application provides an IPM based on power-on reset control, a recovery control method, and an IPM control system, where the IPM includes a first IGBT and a high-side driving chip for driving the first IGBT to turn on or off, a second IGBT and a low-side driving chip for driving the first IGBT to turn on or off; the high-side driving chip comprises a signal input end, a detection circuit, a circuit protection and power-on reset circuit and a high-side driving module electrically connected with the grid electrode of the first IGBT tube. And one end of the detection circuit is connected to a wire connected between the first IGBT tube and the second IGBT tube, and the other end of the detection circuit is connected to the circuit protection and power-on reset circuit and is used for detecting the emitter potential change of the first IGBT tube and outputting a first protection signal to the circuit protection and power-on reset circuit according to the emitter potential change. And one end of the circuit protection and power-on reset circuit is respectively connected to the detection circuit and the signal input end, the other end of the circuit protection and power-on reset circuit is connected to the high-side driving module, and the circuit protection and power-on reset circuit is used for outputting a first cutting-off signal to the high-side driving module when receiving a first protection signal transmitted by the detection circuit so as to cut off the power on of the first IGBT tube, enabling the first IGBT tube to be in a current protection state and receiving a power-on reset signal when the first IGBT tube is powered on again, enabling the first protection signal to be invalid, and transmitting a first driving signal received from the signal input end to the high-side driving module so as to enable the high-side driving module to drive the first IGBT tube to be turned on or off according to the first driving signal. In the process, the circuit protection and power-on reset circuit is arranged in the high-side driving chip, so that the problem that the performance and stability of the whole IPM circuit are affected because the high-side power switch element cannot be timely restored can be effectively solved when the high-side IGBT tube is electrified and the high-side IGBT tube can be automatically restored when the high-side IGBT tube is electrified. In addition, the detection circuit, the circuit protection and the power-on reset circuit in the embodiment are integrated in the high-side driving chip, an additional terminal is not required to be added to receive an external detection signal or a recovery signal, and meanwhile, the small-size packaging requirement of the IPM is met.

The technical scheme of the present application will be described in detail with reference to specific examples. The following embodiments may be combined with each other, and some embodiments may not be repeated for the same or similar concepts or processes.

Referring to fig. 1 to fig. 6, fig. 1 shows a schematic structural diagram of an IPM based on power-on reset control according to an embodiment of the present application, as shown in fig. 1, the IPM100 includes a first IGBT tube 110, a high-side driving chip 120 for driving the first IGBT tube 110 to turn on or off, a second IGBT tube 130, and a low-side driving chip 140 for driving the second IGBT tube 130 to turn on or off; wherein the collector of the first IGBT tube 110 is connected to the first power supply terminal (VDC), the emitter of the second IGBT tube 130 is Grounded (GND), the emitter of the first IGBT tube 110 is electrically connected to the collector of the second IGBT tube 130, such that the first IGBT tube 110 and the second IGBT tube 130 are connected in series, the high side driving chip 120 includes a signal input terminal 121, a detection circuit 123, a circuit protection and power-on reset circuit 124, and a high side driving module 125 electrically connected to the gate of the first IGBT tube 110; the detection circuit 123, one end of which is connected to a wire connected between the first IGBT tube 110 and the second IGBT tube 130, and the other end of which is connected to the circuit protection and power-on reset circuit 124, is configured to detect an emitter potential change of the first IGBT tube 110, and output a first protection signal to the circuit protection and power-on reset circuit 124 according to the emitter potential change; a circuit protection and power-on reset circuit 124, one end of which is connected to the detection circuit 123 and the signal input terminal 121, and the other end of which is connected to the high-side driving module 125, for outputting a first cut-off signal to the high-side driving module 120 to cut off the power of the high-side driving chip 120 when receiving a first protection signal transmitted from the detection circuit 123, so that the first IGBT tube 110 is placed in a current protection state; and a power-on reset signal for transmitting from the high-side driving module 120 when the first IGBT tube is powered on again, the power-on reset signal being used for resetting an initial state of the circuit protection and power-on reset circuit 124, disabling the first protection signal, and transmitting a first driving signal received from the signal input terminal 121 to the high-side driving module 125, so that the high-side driving module 125 drives the first IGBT tube 110 to be turned on or off according to the first driving signal.

In this embodiment, the high-side driving chip, the first IGBT tube, the low-side driving chip, and the second IGBT tube form a half-bridge circuit, and are connected to a load, and the first IGBT tube and the second IGBT tube are turned on or off under the driving action of their respective driving chips in a normal operating state, so as to drive the load. In order to solve the problem that the high-side IGBT tube can be quickly protected in an abnormal state, the high-efficiency protection control of the high-side IGBT tube is realized by setting the emitter potential (Vs potential, which corresponds to the output of the high-side power switch element and is relatively stable in a certain range) of the high-side IGBT tube, so that the problem of damage to the high-side IGBT tube caused by protection delay is solved, but after the high-side IGBT tube is placed in a protection state, a quick recovery mechanism for the high-side IGBT tube is not provided, the stability of the whole IPM circuit can be possibly influenced.

The circuit protection and power-on reset circuit can realize two parts of circuit protection and recovery control through connection among the detection circuit, the signal input end and the high-side driving module. Alternatively, the high-side driving module may be provided with a power cut-off circuit that cuts off the power supply of the high-side driving chip or the power supply of the first IGBT tube when the first cut-off signal (i.e., the first cut-off signal trigger) is received, for example, the power supply of the first IGBT tube is cut off, and the power cut-off circuit may control the power supply line of the first IGBT tube by using a switching device (e.g., a transistor) or a relay or the like (e.g., the switching device may be provided between the collector of the first IGBT tube and the power supply). In this embodiment, the first protection signal may be a voltage signal corresponding to Vs potential, and the first cut-off signal may be a cut-off signal that converts (may be converted by a logic gate, a comparator, or the like) the first protection signal into a signal suitable for controlling the high-side driving module to cut off the power supply. When the first IGBT tube is powered on again (a logic circuit may be provided in the high side driving module, and control logic may control the first IGBT tube to be reconnected to the power supply when the abnormality is recovered), optionally, a power-on reset signal may be transmitted to the circuit protection and power-on reset circuit by using the high side driving module or other modules, so as to achieve (protection signal) reset of the circuit protection and power-on reset circuit, so that it is effectively avoided that after the power is on again, the circuit protection and power-on reset circuit still makes the first IGBT tube continue to be placed in a current protection state based on the previous protection signal, and fast recovery operation of the IGBT tube is achieved.

The principle of the detection circuit is that when the load connected with the first IGBT tube is abnormal, the Vs potential of the high side power switching element changes, for example, in a normal working state, the Vs potential is high (for example, 20V, which can be determined according to practical application adaptability), when the load is short-circuited, the current increases sharply, and the Vs potential decreases sharply. Alternatively, the detection circuit may employ a constant current source structure for detection. Alternatively, the detection circuit in the present embodiment may be connected to the wire to which the first IGBT tube and the second IGBT tube are connected through the high-side floating power return terminal of the high-side driving chip, without adding a new terminal in the high-side driving chip to detect the Vs potential of the first IGBT.

The operating principle of the IGBT tube is that the on and off states of the device are controlled by controlling the voltage of the grid electrode. The signal input end is used for receiving a first driving signal (HIN), and the first driving signal in the embodiment can be a high level signal or a low level signal, wherein the high level signal is used for forming a conducting channel when a forward voltage is applied to the grid electrode, and current can flow through the device; the low level signal is used for applying negative voltage to the grid electrode, the conducting channel is closed, and the device is in a cut-off state. Under the current protection state, the IGBT tube stops running no matter the first driving signal is a high-level signal for guiding the first IGBT tube or a low-level signal for turning off the first IGBT tube.

In an alternative embodiment, as shown in FIG. 2a, the circuit protection and power-on reset circuit 124 may include an analog switch 1241, a latch 1242, and an AND gate 1243; the analog switch 1241 has one end connected to the detection circuit 123 and the signal input terminal (receiving HIN), and the other end connected to one end of the latch 1242, for receiving the first driving signal transmitted from the signal input terminal 121, and for turning on the connection with the detection circuit 123 when the first driving signal is a signal for turning on the first IGBT tube, receiving and transmitting the first protection signal (Vsen) and the first driving signal (HIN) to the latch 1242; the latch 1242 has the other ends connected to the POWER terminal 122 and the and gate 1243, respectively, for latching the first protection signal when receiving the first protection signal, and for receiving a POWER-On Reset signal (POWER On Reset) of the POWER terminal 122, such that the latched first protection signal is disabled; the and gate 1243 has one end connected to the latch 1242 and the signal input terminal 121, and the other end connected to the high-side driving module 125, when the first protection signal in the latch 1242 is valid, the and gate 1243 outputs the first protection signal to the high-side driving module to cut off the power of the first IGBT tube, so that the first IGBT tube is placed in a protection state, and when the first protection signal in the latch 1242 fails, outputs the first driving signal of the signal input terminal 121 to the high-side driving module 125, so that the high-side driving module 125 drives the first IGBT tube 110 to be turned on or off according to the first driving chip 120.

In this embodiment, by providing an analog switch, when the driving signal (HIN is a signal for turning ON the IGBT tube, the first protection signal (Vsen) is enabled by the connection between the analog switch and the detection circuit, and is input to the latch of the protection circuit and the power-ON reset circuit for latching, and when the first protection signal is enabled, the cut-off signal output by the and gate combines the first protection signal and the driving signal, and after the cut-off signal is output, the power supply of the first IGBT tube is cut off, and the first IGBT tube stops running, regardless of whether the driving signal is a signal for turning ON the first IGBT tube or a signal for turning off the first IGBT tube.

When the first IGBT tube is powered up again (for example, the power supply of the high side driving chip is cut off by using the cut-off signal output by the high side driving module, the first IGBT tube is powered up again, or the current path of the first IGBT tube is cut off, the first IGBT tube is powered up again, etc.), the high side driving module sends a power-on reset signal to the latch of the current protection and power-on reset circuit, so that the latch resets the protection signal, that is, the first protection signal fails, after the first IGBT tube is powered up, the circuit protection and power-on reset circuit does not send the cut-off signal to the high side driving module any more, so that the first IGBT tube resumes operation, and if the detection circuit does not detect a new Vs potential change at this time, the signal output by the and the gate is the HIN signal, which is used for turning on or off the first IGBT tube, thereby realizing the fast resuming operation of the first IGBT tube. The timing diagram of the circuit protection and power-on reset circuit is shown in fig. 2b.

In an alternative embodiment, the signal input terminal 121 is further configured to transmit, to the circuit protection and power-on reset circuit 124, a second driving signal for turning off the first IGBT tube 110 when the first IGBT tube 110 is powered up again, so that the circuit protection and power-on reset circuit 124 resumes driving control of the first IGBT tube 110 based on the second driving signal when the power source is restarted.

Considering that when the power is turned ON again, if the HIN signal is in the IGBT ON signal state that turns ON the HIN of the first IGBT, the Vsen signal may be in an over-current state due to the power restart, and the circuit will start to operate in a false alarm state. In order to avoid that the circuit starts to act in a false alarm state, so that the first IGBT tube continues to enter a protection state, when the power is on again, a signal input by the signal input end is controlled to be in an IGBT tube OFF signal state (namely, a second driving signal of the first IGBT tube is turned OFF), so that the first IGBT tube can be effectively restored to operate.

Illustratively, as shown in fig. 3, the detection circuit 123 includes a constant voltage source circuit 311, a current control circuit 312, and a potential detection circuit 313; wherein the current control circuit 312 includes a current control element 3121 and an operational amplifier 3122 electrically connected to the current control element 3121; the current control circuit 312, one end of which is connected to a wire between the first IGBT tube 110 and the second IGBT tube 130 (i.e., connected to an emitter of the first IGBT tube 110 in the drawing) through the current control element 3121, for detecting the Vs potential of the first IGBT tube 110, and the other end of which is connected to the constant voltage source circuit 311 through the operational amplifier 3122; the potential detecting circuit 313, one end of which is connected to the current control element 3121, and the other end of which is connected to the circuit protection and power-on reset circuit 124;

When the Vs potential of the first IGBT tube changes, the operational amplifier 3122 outputs a corresponding level signal to the current control element 3121 based on the constant voltage source circuit 311 to adjust the resistance value of the current control element 3121 and provide a constant current for a current path; the potential detection circuit 313 detects a change in the gate potential of the current control element 3121 after the resistance is adjusted, and detects a change in the Vs potential of the first IGBT tube 110 from the change in the gate potential.

Specifically, as shown in fig. 4, the current control circuit 312 adopts a voltage dividing circuit to control the current. Specifically, the current control circuit 312 further includes a first resistor R1 and a second resistor R2, and the current control element 3121 is a second MOS transistor M1; the constant voltage source circuit 311 includes a first constant voltage source V2; wherein, one end of the first resistor R1 is connected to the wire between the first power switch element 320 and the second power switch element 350, and the other end is connected to the drain of the second MOS transistor, so that the second MOS transistor M1 is connected to the wire between the first power element 330 and the second power element 350 through the resistor R1; one end of the second resistor R2 is connected to the source electrode of the second MOS tube M1, and the other end of the second resistor R2 is connected to the grounding end; the first input end of the operational amplifier U2 (i.e., operational amplifier 3122) is connected to the lead between the source of the second MOS transistor M1 and the second resistor R2; a second input end of the first constant voltage source V2 is connected to the first constant voltage source; the output end of the second MOS transistor M1 is connected to a lead between the grid electrode of the second MOS transistor M1 and the potential detection circuit 313; when the grid electrode of the second MOS tube M1 receives the level signal output by the operational amplifier U2, the potential rising control of the grid electrode of the second MOS tube M1 is conducted or the potential falling control of the grid electrode of the second MOS tube M1 is turned off so as to adjust the resistance value.

In this embodiment, a voltage dividing circuit is formed between R1 (e.g. 5kΩ), M1 and R2 (e.g. 22 Ω), and the currents of the R1 and M1 loops and R2 are always the same by controlling the on/off of the MOS transistors. When Vs is sufficiently high (normal state), the operational amplifier U2 decreases the gate potential of M1 to make the constant current determined by R2 and V2 constantFlow in the path. Obviously, the current flowing here is also limited by R1. Therefore, when the Vs potential drops (abnormal condition such as load short circuit) and the current limited by R1 is smaller than the constant current determined by R2 and V2, the operational amplifier U2 controls the rising potential (i.e., the gate potential of M1) to make M1 to a state of sufficiently ON (i.e., turn ON M1) to decrease the resistance value of M1, thereby ensuring the current constant in the entire current path.

Further, the potential detecting circuit 313 includes a third resistor R3, a fourth resistor R4; the third resistor R3 has one end connected to the gate of the MOS switch M1 and the other end connected to the fourth resistor R4; the output end of the operational amplifier U2 is specifically connected to a wire between the gate of the second MOS tube M1 and the third resistor R3; the circuit protection and power-on reset circuit is specifically connected to a wire between the third resistor and the fourth resistor, so that the detection circuit is connected with the circuit protection and power-on reset circuit; the potential change (VR 4) of the connection point of the wire between the third resistor and the fourth resistor corresponds to the potential change Vg of the gate, and the potential change Vg of the gate is used to determine the potential change Vs of the second end.

In this embodiment, the potential detection circuit 313 may employ a voltage division circuit with M1 (gate), realizing detection of the M1 potential. Specifically, the potential detecting circuit 313 includes R3 (e.g. 300Ω) and R4 (e.g. 200Ω) connected in series with M1 (gate), and the potential point Vg of M1 (gate) and the potential point VR4 of R4 are divided, and the voltage change of Vg point can be obtained by detecting the voltage change of VR4 point according to the principle of the voltage dividing circuit and by using the potential of R4, the current of Vg point is equal to the current of VR4 point, that is, vg/(r3+r4) =vr 4/R4.

In other embodiments, the potential detecting circuit may employ other potential detecting structures besides the above circuit structure, and will not be described herein.

In an alternative implementation of an embodiment, the potential detection circuit 313 further includes an inverter A1; the input end of the inverter A1 is connected to a wire between the third resistor R3 and the fourth resistor R4, the output end of the inverter A1 is connected to the circuit protection and power-on reset circuit, so that the circuit protection and power-on reset circuit is connected to the wire between the third resistor R3 and the fourth resistor R4 through the inverter, and the inverter A1 is used for obtaining the first cut-off signal after inverting the potential change Vg of the grid, and outputting the first cut-off signal to the high-side driving chip. Specifically, the inverted potential change (the output signal of the potential detection circuit 313, SEN) is output to the circuit protection and power-on reset circuit 124 in response to the Vs potential change, thereby realizing current protection of the high-side power element.

It will be understood that, in the above embodiment, when the Vs potential drops sharply, it is necessary to output the gate potential (i.e., vg) of the high level rise M1 through the operational amplifier, in other words, when the Vs potential is low, the Vg potential is high, the Vg potential and the VR4 voltage are in a negative correlation, and the Vg potential and the VR4 voltage are in a positive correlation, so that the VR4 or the Vg potential corresponding thereto detected in the above embodiment is opposite to the Vs potential which needs to be detected finally, and in order to further improve the output efficiency of the cut signal, the inverter A1 is added, and the VSEN is obtained by inverting the VR4 potential and then output, and the output can be directly outputted as the Vs potential corresponding cut signal.

In other embodiments, an inverter may not be required, and the VR4 potential may be output as a cut-off signal after other processing.

Further, the detection circuit may further include: and one end of the capacitor C1 is connected to a wire, connected with the third resistor and the second resistor, of the circuit protection and power-on reset circuit, and the other end of the capacitor C1 is connected to the ground end and is used for filtering the detected potential change of the fourth resistor. In this embodiment, the capacitance of the capacitor C1 may be 100p or other values, and C1 may be used as a filter capacitor, and filtering may be used to remove or amplify the signal, so that the output signal is more accurate.

Further, the constant voltage source circuit 311 further includes a second constant voltage source V1; the third input end of the operational amplifier U2 is connected to the second constant voltage source V1, and the fourth input end thereof is connected to the ground end, so that the output end thereof outputs the level signal corresponding to the second constant voltage source or the ground end to the current control element.

As shown in fig. 4, the operational amplifier U2 includes four input terminals, two signal input terminals (a positive input terminal and a negative input terminal), two power input terminals (a positive input terminal and a negative input terminal), a branch circuit in which the positive input terminal (i.e., the second input terminal) and the negative input terminal (i.e., the first input terminal) are respectively connected to M1 and R2, and a first constant voltage source V2, and by comparing the voltage between R2 and the first constant voltage source, when the voltage at the point R2 drops to be less than V2 (e.g., V2 is a constant voltage source of 0.5V, and the voltage of R2 is less than 0.5V), a second constant voltage source V1 (e.g., 12V) connected to the positive input terminal outputs a high level of 12V at the output terminal, so that the gate of M1 is raised, and the current in the current path is constant. In the example as in fig. 4, a third constant voltage source V3 is also provided, which third constant voltage source V3 is connected to Vs at one end and grounded at the other end.

Further, in order to improve the operation stability of the high-side driving chip 120, in this embodiment, a circuit structure such as a signal input circuit, a filter circuit, a level conversion circuit, etc. may be provided in addition to the above-described components of the high-side driving chip 120. Specifically, as shown in fig. 5, the high-side drive signal 120 may also include a filter circuit 126; wherein one end of the filter circuit 126 is connected to the signal input terminal 121, and the other end thereof is connected to the circuit protection and power-on reset circuit 124, so that the circuit protection and power-on reset circuit 124 filters the first driving signal through the filter circuit 126 and receives the filtered first driving signal.

Optionally, the apparatus may further include a signal input circuit 122, where the signal input circuit 122, the signal input terminal 121 and the filter circuit 126 convert the first driving signal input by the signal input terminal into a suitable voltage, current or frequency, and output the suitable voltage, current or frequency to the filter circuit for filtering.

In this embodiment, the filter circuit may include a Dead Time and a Low-pass filter (Dead Time & Low PASS FILTER, DT & LPF), where the Dead Time is a Time when switching the upper and lower bridge power switching elements (i.e., the first IGBT tube and the second IGBT tube), in order to avoid a short circuit caused by the two IGBT tubes being turned on simultaneously, by setting a short delay Time, i.e., the Dead Time. The dead time can effectively prevent two switching devices in the circuit from being conducted simultaneously, so that transient overcurrent and damage to the circuit are avoided; the low-pass filter can filter high-frequency noise or interference signals to ensure the stability and accuracy of output signals, and allows low-frequency signals to pass through and prevents high-frequency signals from passing through to achieve a filtering effect. When the first IGBT is driven, the low-pass filter can help smooth output signals, reduce electromagnetic interference and improve the performance and stability of the system.

Optionally, the high-side driving chip 120 may further include a level conversion circuit 127, where one end of the level conversion circuit 127 is connected to the circuit protection and power-on reset circuit, and the other end of the level conversion circuit 127 is connected to the high-side driving module 125, so that after the high-side driving module 125 performs level conversion on the first driving signal transmitted by the circuit protection and power-on reset circuit 124 through the level conversion circuit 127, the first IGBT tube 110 is driven to be turned on or off based on the first driving signal after the level conversion.

The level conversion circuit may include a high level conversion logic module and a high level conversion module connected in sequence. The high level conversion logic module may be a logic gate circuit, and is configured to control a level of an output signal according to a logic state (such as logic high or logic low) of an input signal, so that an input driving signal can meet a control logic requirement of the first IGBT; the high level conversion module can comprise a level converter or an amplifier circuit, and converts a logic level signal subjected to high level conversion logic into a high level signal which is enough to drive the first IGBT, so that the on and off processes of the first IGBT are stable and reliable, and misoperation or damage is avoided.

In a preferred embodiment, the high-side driver chip 120 further includes a second power supply terminal (VCC) and a pull-up resistor 129, wherein one end of the pull-up resistor (Reg) 129 is connected to the second power supply terminal (VCC), and the other end is connected to the circuit protection and power-on reset circuit 124, so that the circuit protection and power-on reset circuit maintains a signal state corresponding to the pull-up resistor 129 when not connected.

It will be appreciated that the second power source VCC in this embodiment is typically an input power source that is a low voltage power source for receiving an external signal. In the high-side driving chip, a first power end is high-voltage VDC and provides input power for the high-side IGBT tube. The second power supply terminal VCC may be a high-side driver chip that outputs a high-voltage power supply VB to the gate of the IGBT by amplifying a power supply voltage by a diode circuit (BSD & R).

In the present embodiment, by connecting the pull-up resistor to the second power supply terminal of the high-side driving chip, a stable logic high level can be provided by the first power supply when no external signal is input. The circuit protection and power-on reset circuit is connected to the pull-up resistor, so that the input end of the chip can be ensured to be kept in a high-level state when the input end is not actively pulled down, and the input end can be effectively prevented from floating or being in an undefined state, thereby improving the stability and reliability of the circuit. That is, when no external signal is input, the input terminal is pulled up to a logic high level, so that the chip can be ensured to operate normally.

In addition, the pull-up resistor 129 may be further connected to the signal input circuit 122, the filter circuit 126, the detection circuit 123, and other circuit structures, and the principle thereof is similar, and will not be described herein again.

In one implementation, the pull-up resistor Reg may be connected between the analog switch 1241 and the latch 1242 in a manner as shown in fig. 6, where the pull-up resistor Reg may be connected to transmit the first protection signal when the HIN signal turns on the analog switch 1241, but when it turns off, the output of the analog switch is in an open state, and the resistance of the pull-up resistor Reg may be used to determine the state of the switch when it is turned off by connecting the resistor to the pull-up resistor between the analog switch 1241 and the latch 1242, i.e., in other words, when the switch is turned off, the state of the portion becomes Reg voltage, and the connected circuit is maintained in a high level (may be in a potential state of about 0V (low level) or about 5V (high level)) which may provide a basis for the latch logic operation, which may effectively improve the stability of the circuit.

In the above embodiment, the IPM structure corresponding to the half-bridge circuit is shown, so as to implement the overcurrent protection and the fast recovery control of the first IGBT, and the following description of the embodiment of the present application is given with reference to the full-bridge circuit:

Fig. 6 is a schematic structural diagram of another IPM provided in an embodiment of the present application, as shown in fig. 6, IPM100 may further include a third IGBT tube 150 and a fourth IGBT tube 160 in addition to the circuit structure shown in fig. 1, a collector of third IGBT tube 150 is connected to the first power supply terminal, an emitter of fourth IGBT tube 160 is grounded, and an emitter of third IGBT tube 150 is electrically connected to a collector of fourth IGBT tube 160, so that third IGBT tube 150 and fourth IGBT tube 160 are connected in series; the high-side driving chip 120 further includes a second high-side driving module 125 connected to the third IGBT tube 150; the detection circuit 123, one end of which is further connected to a wire connected between the third IGBT tube 150 and the fourth IGBT160 tube, is configured to detect an emitter potential change of the third IGBT tube 150, and output a second protection signal to the circuit protection and power-on reset circuit 124 according to the emitter potential change; a circuit protection and power-on reset circuit 124, the other end of which is further connected to the high-side driving module 125, for outputting a second cut-off signal to the high-side driving module 125 to cut off the power on of the third IGBT tube when receiving the second protection signal transmitted by the detection circuit 123, so that the third IGBT tube 150 is placed in a current protection state; and, a power-on reset signal for receiving the power-on reset signal transmitted by the high-side driving module 125 when the third IGBT tube 150 is powered on again, wherein the power-on reset signal is used for resetting the initial state of the circuit protection and power-on reset circuit 124, so that the second protection signal is disabled, and transmitting the second driving signal received from the signal input terminal 121 to the high-side driving module 125, so that the high-side driving module 125 drives the third IGBT tube to be turned on 150 or turned off according to the second driving signal; the low-side driving chip 140 is further electrically connected to the fourth IGBT tube 160, and is configured to drive on or off of the fourth IGBT tube.

In this embodiment, the low-side driving chip may receive the third driving signal and the fourth driving signal, and drive on or off of the second IGBT tube and the fourth IGBT tube, respectively.

It should be noted that the principle of the full-bridge circuit structure provided in this embodiment is similar to that of the foregoing embodiment, and the related content may be the foregoing embodiment. The high-side IGBT circuit protection circuit can realize current protection and quick recovery control for the first IGBT tube and the third IGBT tube at the high side, effectively reduce the time delay of high-side IGBT circuit protection based on the low-side driving chip, and realize quick recovery operation of the high-side IGBT tube.

In some embodiments, the technical solution provided in this embodiment may also be applied to other circuit structures, such as a three-phase bridge circuit structure, which is not particularly limited in this embodiment.

Fig. 7 is a schematic diagram of a recovery control method of an IPM according to an embodiment of the present application, where the IPM may include a first IGBT and a high side driver chip for driving the first IGBT to turn on or off, a second IGBT and a low side driver chip for driving the first IGBT to turn on or off; the high-side driving chip comprises a signal input end, a detection circuit, a circuit protection and power-on reset circuit and a high-side driving module electrically connected with the grid electrode of the first IGBT tube; the method comprises the following steps:

step 701, a detection circuit detects emitter potential change of the first IGBT tube, and outputs a first protection signal to the circuit protection and power-on reset circuit according to the emitter potential change;

Step S702, when the circuit protection and power-on reset circuit receives the first protection signal transmitted by the detection circuit, outputting a first cut-off signal to the high-side driving module to cut off the power on of the first IGBT tube, so that the first IGBT tube is in a current protection state;

In step S703, the circuit protection and power-on reset circuit receives a power-on reset signal when the first IGBT tube is powered on again, where the power-on reset signal is used to reset an initial state of the circuit protection and power-on reset circuit, so that the first protection signal fails, and transmits a first driving signal received from the signal input end to the high side driving module, so that the high side driving module drives the first IGBT tube to turn on or off according to the first driving signal.

In one embodiment, the circuit protection and power-on reset circuit includes an analog switch, a latch, and an and gate; the steps of executing the circuit protection and power-on reset circuit in this embodiment may include the following steps:

The analog switch receives the first driving signal transmitted by the signal input end, and when the first driving signal is a signal for conducting the first IGBT, the analog switch conducts the connection with the detection circuit, receives and transmits the first protection signal and the first driving signal to the latch;

the latch latches the first protection signal when receiving the first protection signal, and disables the latched first protection signal when receiving a power-on reset signal sent by the high-side driving module;

When the first protection signal in the latch is valid, the AND gate transmits the first cut-off signal to the high-side driving module so as to cut off the power on of the first IGBT tube, so that the first IGBT tube is in a protection state;

And when the first protection signal in the latch fails, the AND gate outputs the first driving signal of the signal input end to the high-side driving module, so that the high-side driving module drives the first IGBT tube to be turned on or turned off according to the first driving chip.

The method provided by the embodiment of the present application can realize similar principles and technical effects to those of the IPM embodiment, and the description thereof may correspond to the descriptions of the tragic figures 1 to 6, which are not repeated here.

Fig. 8 illustrates an IPM control system provided in an embodiment of the present application, where, as shown in fig. 8, an IPM control system 800 includes the IPM100 and a load device 200, where the load device 200 is electrically connected to the first IGBT tube.

The IPM control system provided by the embodiment of the present application may achieve similar principles and technical effects to those of the IPM embodiment, and the description thereof may correspond to the descriptions of the tragic fig. 1 to 6, which are not repeated herein.

Embodiments of the present application also provide a computer-readable storage medium, which may include: various media capable of storing program codes, such as a usb disc, a removable hard disk, a Read-Only Memory (ROM), a random access Memory (RAM, random Access Memory), a magnetic disk or an optical disc, etc., specifically, the computer-readable storage medium stores computer-executable instructions, where the program instructions are used in the IPM restoration control method in the foregoing embodiment, and the relevant descriptions may be correspondingly understood with reference to the relevant descriptions and effects in the device embodiments corresponding to fig. 1 to 6, which are not repeated herein.

Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present application, and not for limiting the same; although the application has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the application.

The foregoing description, for purposes of explanation, has been presented in conjunction with specific embodiments. The illustrative discussions above are not intended to be exhaustive or to limit the embodiments to the precise forms disclosed above. Many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles and the practical application, to thereby enable others skilled in the art to best utilize the embodiments and various embodiments with various modifications as are suited to the particular use contemplated.

Claims (10)

1. The intelligent power module IPM based on power-on reset control is characterized by comprising a first IGBT tube, a high-side driving chip for driving the first IGBT tube to be turned on or turned off, a second IGBT tube and a low-side driving chip for driving the first IGBT tube to be turned on or turned off; the high-side driving chip comprises a signal input end, a detection circuit, a circuit protection and power-on reset circuit and a high-side driving module electrically connected with the grid electrode of the first IGBT tube;

One end of the detection circuit is connected to a wire connected between the first IGBT tube and the second IGBT tube, and the other end of the detection circuit is connected to a circuit protection and power-on reset circuit, and is used for detecting emitter potential change of the first IGBT tube and outputting a first protection signal to the circuit protection and power-on reset circuit according to the emitter potential change;

The circuit protection and power-on reset circuit is characterized in that one end of the circuit protection and power-on reset circuit is respectively connected to the detection circuit and the signal input end, the other end of the circuit protection and power-on reset circuit is connected to the high-side driving module, and the circuit protection and power-on reset circuit is used for outputting a first cutting-off signal to the high-side driving module when receiving a first protection signal transmitted by the detection circuit so as to cut off the power on of the first IGBT tube, so that the first IGBT tube is in a current protection state; and the power-on reset signal is used for resetting the initial state of the circuit protection and power-on reset circuit, so that the first protection signal is invalid, and a first driving signal received from the signal input end is transmitted to the high-side driving module, so that the high-side driving module drives the first IGBT tube to be turned on or turned off according to the first driving signal.

2. The IPM of claim 1, wherein the circuit protection and power-on reset circuit includes an analog switch, a latch, and an and gate;

The analog switch is connected to the detection circuit and the signal input end at one end, is connected to one end of the latch at the other end, and is used for receiving the first driving signal transmitted by the signal input end, and conducting connection with the detection circuit when the first driving signal is a signal for conducting the first IGBT tube, and receiving and transmitting the first protection signal and the first driving signal to the latch;

The latch is connected to the high-side driving module and the AND gate at the other end, and is used for latching the first protection signal when receiving the first protection signal, and is used for receiving a power-on reset signal sent by the high-side driving module so that the latched first protection signal is invalid;

And one end of the AND gate is connected with the latch and the signal input end, the other end of the AND gate is connected with the high-side driving module, when the first protection signal in the latch is effective, the AND gate transmits the first cutting-off signal to the high-side driving module so as to cut off the electrifying of the first IGBT tube, so that the first IGBT tube is in a protection state, and when the first protection signal in the latch fails, the first driving signal of the signal input end is output to the high-side driving module, so that the high-side driving module drives the first IGBT tube to be turned on or off according to the first driving chip.

3. The IPM of claim 1 or 2, wherein the signal input terminal is further configured to transmit a second driving signal for turning off the first IGBT tube to the circuit protection and power-on reset circuit when the first IGBT tube is powered up again, so that the circuit protection and power-on reset circuit resumes driving control of the first IGBT tube based on the second driving signal when the power supply is restarted.

4. The IPM of claim 1 or 2, wherein the high-side driver chip further comprises a filter circuit;

And one end of the filter circuit is connected to the signal input end, and the other end of the filter circuit is connected to the circuit protection and power-on reset circuit, so that the circuit protection and power-on reset circuit filters the first driving signal through the filter circuit and receives the filtered first driving signal.

5. The IPM of claim 4, wherein the high-side driver chip further comprises a level shifter circuit, one end of the level shifter circuit is connected to the circuit protection and power-on reset circuit, and the other end of the level shifter circuit is connected to the high-side driver module, so that the high-side driver module performs level shifting on the first driving signal transmitted by the circuit protection and power-on reset circuit through the level shifter circuit, and drives the first IGBT tube to be turned on or off based on the first driving signal after level shifting.

6. The IPM of claim 5, wherein the high-side driver chip further comprises a second power terminal and a pull-up resistor, one end of the pull-up resistor being connected to the second power terminal and the other end being connected to the circuit protection and power-on reset circuit, such that the circuit protection and power-on reset circuit remains in a signal state corresponding to the pull-up resistor when not connected.

7. The IPM of claim 1 or 2, further comprising a third IGBT tube and a fourth IGBT tube, the collector of the third IGBT tube connected to the first power supply terminal, the emitter of the fourth IGBT tube grounded, the emitter of the third IGBT tube electrically connected to the collector of the fourth IGBT tube such that the third IGBT tube and the fourth IGBT tube are connected in series; the high-side driving chip is also connected with the grid electrode of the third IGBT tube;

One end of the detection circuit is also connected to a wire connected between the third IGBT tube and the fourth IGBT tube, and is used for detecting emitter potential change of the third IGBT tube and outputting a second protection signal to the circuit protection and power-on reset circuit according to the emitter potential change;

The other end of the circuit protection and power-on reset circuit is also connected to the high-side driving module and is used for outputting a second cut-off signal to the high-side driving module when receiving a second protection signal transmitted by the detection circuit so as to cut off the power on of the third IGBT tube, so that the third IGBT tube is in a current protection state; the power-on reset signal is used for resetting the initial state of the circuit protection and power-on reset circuit, so that the second protection signal is invalid, and a second driving signal received from the signal input end is transmitted to the high-side driving module, so that the high-side driving module drives the third IGBT to be turned on or turned off according to the second driving signal;

The low-side driving chip is also electrically connected with the fourth IGBT tube and used for driving the fourth IGBT tube to be turned on or turned off.

8. The IPM recovery control method is characterized by comprising a first IGBT tube, a high-side driving chip for driving the first IGBT tube to be turned on or turned off, a second IGBT tube and a low-side driving chip for driving the first IGBT tube to be turned on or turned off; the high-side driving chip comprises a signal input end, a detection circuit, a circuit protection and power-on reset circuit and a high-side driving module electrically connected with the grid electrode of the first IGBT tube; the method comprises the following steps:

The detection circuit detects emitter potential change of the first IGBT tube and outputs a first protection signal to the circuit protection and power-on reset circuit according to the emitter potential change;

When the circuit protection and power-on reset circuit receives a first protection signal transmitted by the detection circuit, a first cut-off signal is output to the high-side driving module so as to cut off the power on of the first IGBT tube, and the first IGBT tube is in a current protection state;

the circuit protection and power-on reset circuit receives a power-on reset signal when the first IGBT tube is powered on again, and the power-on reset signal is used for resetting the initial state of the circuit protection and power-on reset circuit, so that the first protection signal is invalid, and a first driving signal received from the signal input end is transmitted to the high-side driving module, so that the high-side driving module drives the first IGBT tube to be turned on or turned off according to the first driving signal.

9. A computer-readable storage medium having stored thereon computer-executable instructions that, when executed by a processor, implement the restoration control method of an IPM according to claim 8.

10. An IPM control system, comprising the IPM of any one of claims 1-7 and a load device electrically connected to the first IGBT tube.