CN118248588A

CN118248588A - Substrate processing apparatus and substrate processing method

Info

Publication number: CN118248588A
Application number: CN202311791285.0A
Authority: CN
Inventors: 冈田吉文; 冲田展彬; 中村一树
Original assignee: Screen Holdings Co Ltd
Current assignee: Screen Holdings Co Ltd
Priority date: 2022-12-23
Filing date: 2023-12-22
Publication date: 2024-06-25
Also published as: CN118248585A; CN118248589A; CN118248586A

Abstract

The present invention relates to a substrate processing apparatus and a substrate processing method. The present invention is to hold the peripheral end of a substrate by an upper holding device and clean the central area of the lower surface of the substrate by a lower surface brush. After the central area of the lower surface of the substrate is cleaned, the substrate is lowered from the upper holding device and is transferred to the suction holding portion of the lower holding device. The substrate held by the suction holding portion is cleaned with a treatment liquid. The shield surrounding the substrate in a plan view is provided so as to be capable of moving up and down between an upper shield position where the processing liquid can be received and a lower shield position below the upper shield position. The shield is in the lower shield position when in standby. Each operation is started so that a substrate lowering operation period in which the substrate is moved from the height position of the upper holding device to the height position of the lower holding device overlaps at least a part of a shield raising operation period in which the substrate is raised from the lower shield position to the upper shield position.

Description

Substrate processing apparatus and substrate processing method

Technical Field

The present invention relates to a substrate processing apparatus and a substrate processing method for cleaning a substrate.

Background

A substrate processing apparatus is used for performing various processes on various substrates such as a substrate for FPD (FLAT PANEL DISPLAY ), a semiconductor substrate, a substrate for optical disk, a substrate for magnetic disk, a substrate for magneto-optical disk, a substrate for photomask, a ceramic substrate, and a substrate for solar cell, which are used for a liquid crystal display device, an organic EL (Electro Luminescence ) display device, and the like. In order to clean the substrate, a substrate cleaning apparatus is used.

For example, the substrate cleaning apparatus described in japanese patent No. 5904169 includes: 2 adsorption pads for holding the periphery of the back surface of the wafer; a spin chuck for holding a rear center portion of the wafer; and brushing the back surface of the wafer. The 2 suction pads hold the wafer in motion in the lateral direction. In this state, the center portion of the back surface of the wafer is cleaned. Then, the spin chuck receives the wafer from the suction pad, and rotates while holding the center portion of the back surface of the wafer. In this state, the peripheral edge of the back surface of the wafer is cleaned.

Disclosure of Invention

In the above-described substrate cleaning apparatus, a plurality of substrates are sequentially carried in and out, and each substrate is subjected to cleaning treatment. Therefore, if the time required for processing one substrate can be shortened, the processing efficiency of a plurality of substrates can be greatly improved. Therefore, in the substrate cleaning apparatus, further improvement in the throughput of the substrate processing is demanded.

The invention provides a substrate processing apparatus and a substrate processing method capable of improving the processing amount of substrate processing.

The substrate processing apparatus according to an aspect of the present invention includes: a1 st substrate holding portion configured to be capable of holding a substrate at a1 st height position; a2 nd substrate holding unit configured to hold a substrate at a2 nd height position lower than the 1 st height position; a processing unit configured to perform a1 st process on the substrate held by the 1 st substrate holding unit and a2 nd process on the substrate held by the 2 nd substrate holding unit; a substrate moving unit configured to perform a substrate lowering operation for lowering a substrate from the 1 st height position to the 2 nd height position in order to transfer the substrate from the 1 st substrate holding unit to the 2 nd substrate holding unit; a control unit; and the 2 nd treatment includes a treatment using a treatment liquid; the processing unit includes: a process shield formed so as to surround the 2 nd substrate holding portion in a plan view, and provided so as to be capable of being lifted and lowered between an upper shield position corresponding to the 2 nd height position and a lower shield position lower than the upper shield position; and a shield driving unit for lifting and lowering the process shield; the control unit controls the substrate moving unit and the shield driving unit to perform the substrate lowering operation of the substrate moving unit and the shield raising operation of raising the process shield from the lower shield position to the upper shield position so that at least a part of the shield raising operation overlaps with the substrate lowering operation.

Another aspect of the present invention provides a substrate processing apparatus comprising: a1 st substrate holding portion configured to be capable of holding a substrate at a1 st height position; a2 nd substrate holding unit configured to hold a substrate at a2 nd height position lower than the 1 st height position; a processing unit configured to perform a1 st process on the substrate held by the 1 st substrate holding unit and a2 nd process on the substrate held by the 2 nd substrate holding unit; a substrate moving unit configured to perform a substrate lowering operation for lowering a substrate from the 1 st height position to the 2 nd height position in order to transfer the substrate from the 1 st substrate holding unit to the 2 nd substrate holding unit; a control unit; and the processing section includes: a lower surface brush for cleaning the lower surface of the substrate by contacting the lower surface; and a lower surface brush moving unit configured to move the lower surface brush between a lower surface brush processing position in contact with the lower surface of the substrate held by the 2 nd substrate holding unit and a lower surface brush standby position spaced apart from the lower surface brush processing position; the 2 nd process includes a cleaning process of the lower surface of the substrate by the lower surface brush, and the control unit controls the substrate moving unit and the lower surface brush moving unit to perform the substrate lowering operation of the substrate moving unit and a lower surface brush preparation operation of moving the lower surface brush from the lower surface brush standby position to the lower surface brush processing position so that at least a part of the substrate lowering operation overlaps with at least a part of the lower surface brush preparation operation.

A substrate processing apparatus according to still another aspect of the present invention includes: a1 st substrate holding portion configured to be capable of holding a substrate at a1 st height position; a2 nd substrate holding unit configured to hold a substrate at a2 nd height position lower than the 1 st height position; a processing unit configured to perform a1 st process on the substrate held by the 1 st substrate holding unit and a2 nd process on the substrate held by the 2 nd substrate holding unit; a substrate moving unit configured to perform a substrate lowering operation for lowering a substrate from the 1 st height position to the 2 nd height position in order to transfer the substrate from the 1 st substrate holding unit to the 2 nd substrate holding unit; a control unit; and the processing section includes: a fluid nozzle for ejecting a fluid containing a processing liquid toward the upper surface of the substrate; and a nozzle moving unit configured to move the fluid nozzle between a nozzle processing position above the substrate held by the 2 nd substrate holding unit and a nozzle standby position spaced apart from and laterally to the substrate held by the 2 nd substrate holding unit; the 2 nd process includes a cleaning process of the upper surface of the substrate by the fluid nozzle, and the control unit controls the substrate moving unit and the nozzle moving unit to perform the substrate lowering operation of the substrate moving unit and the nozzle preparation operation of moving the fluid nozzle from the nozzle standby position to the nozzle processing position so that at least a part of the substrate lowering operation overlaps with at least a part of the nozzle preparation operation.

A substrate processing apparatus according to still another aspect of the present invention includes: a1 st substrate holding portion configured to be capable of holding a substrate at a1 st height position; a2 nd substrate holding unit configured to hold a substrate at a2 nd height position lower than the 1 st height position; a processing unit configured to perform a1 st process on the substrate held by the 1 st substrate holding unit and a2 nd process on the substrate held by the 2 nd substrate holding unit; a substrate moving unit configured to perform a substrate lowering operation for lowering a substrate from the 1 st height position to the 2 nd height position in order to transfer the substrate from the 1 st substrate holding unit to the 2 nd substrate holding unit; a control unit; and the processing section includes: an end brush that cleans an outer peripheral end of a substrate by contacting the outer peripheral end; and an end brush moving unit configured to move the end brush between an end brush processing position in contact with an outer peripheral end of the substrate held by the 2 nd substrate holding unit and an end brush standby position spaced apart from and laterally from the substrate held by the 2 nd substrate holding unit; the 2 nd process includes a cleaning process of the outer peripheral end portion of the substrate by the end brush, and the control unit controls the substrate moving unit and the end brush moving unit to perform the substrate lowering operation of the substrate moving unit and the end brush preparation operation of moving the end brush from the end brush standby position to the end brush processing position so that at least a part of the substrate lowering operation overlaps with at least a part of the end brush preparation operation.

A substrate processing method according to still another aspect of the present invention includes the steps of: processing 1 st the substrate held by the 1 st substrate holding section at the 1 st height position; performing the 2 nd process on the substrate held by the 2 nd substrate holding portion using the processing liquid at the 2 nd height position lower than the 1 st height position; a substrate lowering operation for lowering a substrate from the 1 st height position to the 2 nd height position in order to transfer the substrate from the 1 st substrate holding portion to the 2 nd substrate holding portion after the 1 st process and before the 2 nd process; a process shield which is formed so as to surround the 2 nd substrate holding portion in a plan view and is provided so as to be capable of being lifted and lowered, and which is disposed at an upper shield position corresponding to the 2 nd height position so as to receive the process liquid used in the 2 nd process; and elevating the process shield between the upper shield position and a lower shield position below the upper shield position; and after the 1 st process and before the 2 nd process, starting the step of performing the substrate lowering operation and the step of raising and lowering the process shield so as to overlap at least a part of a shield raising operation period in which the process shield is raised from the lower shield position to the upper shield position during the substrate lowering operation.

A substrate processing method according to still another aspect of the present invention includes the steps of: processing 1 st the substrate held by the 1 st substrate holding section at the 1 st height position; performing a2 nd process including cleaning a lower surface of the substrate by bringing a lower surface brush into contact with the lower surface of the substrate held by the 2 nd substrate holding portion at a2 nd height position lower than the 1 st height position; a substrate lowering operation for lowering a substrate from the 1 st height position to the 2 nd height position in order to transfer the substrate from the 1 st substrate holding portion to the 2 nd substrate holding portion after the 1 st process and before the 2 nd process; and moving the lower surface brush between a lower surface brush processing position in contact with the lower surface of the substrate held by the 2 nd substrate holding section and a lower surface brush standby position spaced from the lower surface brush processing position; and starting the step of performing the substrate lowering operation and the step of moving the lower surface brush so as to overlap at least a part of a lower surface brush preparation operation period in which the lower surface brush is moved from the lower surface brush standby position to the lower surface brush processing position during the substrate lowering operation after the 1 st process and before the 2 nd process.

A substrate processing method according to still another aspect of the present invention includes the steps of: processing 1 st the substrate held by the 1 st substrate holding section at the 1 st height position; performing a2 nd process including discharging a fluid containing a processing liquid from a fluid nozzle onto an upper surface of a substrate held by a2 nd substrate holding portion at a2 nd height position lower than the 1 st height position, and cleaning the upper surface of the substrate; a substrate lowering operation for lowering a substrate from the 1 st height position to the 2 nd height position in order to transfer the substrate from the 1 st substrate holding portion to the 2 nd substrate holding portion after the 1 st process and before the 2 nd process; and moving the fluid nozzle between a nozzle processing position above the substrate held by the 2 nd substrate holding portion and a nozzle standby position spaced apart from and laterally of the substrate held by the 2 nd substrate holding portion; and after the 1 st process and before the 2 nd process, starting the step of performing the substrate lowering operation and the step of moving the fluid nozzle so as to overlap at least a part of a nozzle preparation operation period in which the fluid nozzle is moved from the nozzle standby position to the nozzle processing position during the substrate lowering operation.

A substrate processing method according to still another aspect of the present invention includes the steps of: processing 1 st the substrate held by the 1 st substrate holding section at the 1 st height position; performing a 2 nd process including cleaning an outer peripheral end portion of the substrate held by the 2 nd substrate holding portion by bringing the end brush into contact with the outer peripheral end portion of the substrate at a 2 nd height position lower than the 1 st height position; a substrate lowering operation for lowering a substrate from the 1 st height position to the 2 nd height position in order to transfer the substrate from the 1 st substrate holding portion to the 2 nd substrate holding portion after the 1 st process and before the 2 nd process; and moving the end brush between an end brush processing position in contact with the outer peripheral end of the substrate held by the 2 nd substrate holding portion and an end brush standby position spaced apart from and laterally of the substrate held by the 2 nd substrate holding portion; and after the 1 st process and before the 2 nd process, starting the step of performing the substrate lowering operation and the step of moving the end brush so as to overlap at least a part of an end brush preparation operation period in which the end brush is moved from the end brush standby position to the end brush processing position during the substrate lowering operation.

According to the present invention, the throughput of substrate processing can be improved.

Drawings

Fig. 1 is a schematic plan view of a substrate cleaning apparatus according to an embodiment of the present invention.

Fig. 2 is an external perspective view showing an internal configuration of the substrate cleaning apparatus of fig. 1.

Fig. 3 is an external perspective view of the lower jaw of fig. 1 and 2.

Fig. 4 is an external perspective view of the upper chuck of fig. 1 and 2.

Fig. 5 is a block diagram showing a configuration of a control system of the substrate cleaning apparatus of fig. 1.

Fig. 6 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of fig. 1.

Fig. 7 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of fig. 1.

Fig. 8 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of fig. 1.

Fig. 9 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of fig. 1.

Fig. 10 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of fig. 1.

Fig. 11 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of fig. 1.

Fig. 12 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of fig. 1.

Fig. 13 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of fig. 1.

Fig. 14 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of fig. 1.

Fig. 15 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of fig. 1.

Fig. 16 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of fig. 1.

Fig. 17 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of fig. 1.

Fig. 18 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of fig. 1.

Fig. 19 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of fig. 1.

Fig. 20 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of fig. 1.

Fig. 21 is a schematic plan view of a substrate cleaning apparatus according to another embodiment.

Fig. 22 is a block diagram showing a configuration of a control system of the substrate cleaning apparatus of fig. 21.

Fig. 23 is a side view for explaining a control example of the rinse drive unit and the rinse liquid supply unit by the rinse control unit in fig. 22.

Detailed Description

A substrate processing apparatus and a substrate processing method according to an embodiment of the present invention will be described below with reference to the drawings. The substrate processing apparatus and the substrate processing method according to the present embodiment are a substrate cleaning apparatus and a substrate cleaning method. In the following description, the substrate refers to a substrate for FPD (Flat Panel Display) such as a semiconductor substrate (wafer), a liquid crystal display device, or an organic EL (Electro Luminescence) display device, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, a ceramic substrate, or a substrate for a solar cell, or the like. In this embodiment, the upper surface of the substrate is a circuit formation surface (front surface), and the lower surface of the substrate is a surface opposite to the circuit formation surface (back surface). Further, the substrate used in this embodiment mode has an outer peripheral portion at least a part of which is circular. For example, the substrate used in the present embodiment has a circular outer peripheral end portion outside the recess.

1. Structure of substrate cleaning device

Fig. 1 is a schematic plan view of a substrate cleaning apparatus according to an embodiment of the present invention. Fig. 2 is an external perspective view showing an internal configuration of the substrate cleaning apparatus 1 of fig. 1. In the substrate cleaning apparatus 1 of the present embodiment, the X direction, the Y direction, and the Z direction orthogonal to each other are defined for the purpose of specifying the positional relationship. In the predetermined diagrams shown in fig. 1 and 2, the X direction, the Y direction, and the Z direction are appropriately indicated by arrows. The X direction and the Y direction are orthogonal to each other in a horizontal plane, and the Z direction corresponds to a vertical direction (up-down direction).

As shown in fig. 1, the substrate cleaning apparatus 1 includes upper holding devices 10A and 10B, a lower holding device 20, a base device 30, a delivery device 40, a lower surface cleaning device 50, a cover device 60, an upper surface cleaning device 70, an end cleaning device 80, and an opening/closing device 90. These constituent elements are provided in the unit case 2. In fig. 2, the unit housing 2 is shown in broken lines.

The unit case 2 has a rectangular bottom surface portion 2a, and 4 side wall portions 2b, 2c, 2d, 2e extending upward from 4 sides of the bottom surface portion 2 a. The side wall portions 2b, 2c are opposed to each other, and the side wall portions 2d, 2e are opposed to each other. A rectangular opening is formed in the center of the side wall 2 b. The opening is a carry-in/out port 2x for the substrate W, and is used when the substrate W is carried in and carried out of the unit case 2. In fig. 2, the carry-in/carry-out port 2x is shown by a thick dotted line. In the following description, a direction from the inside of the unit case 2 toward the outside of the unit case 2 through the carry-in/out port 2x (a direction from the side wall portion 2c toward the side wall portion 2 b) in the Y direction is referred to as a front direction, and a direction opposite thereto (a direction from the side wall portion 2b toward the side wall portion 2 c) is referred to as a rear direction.

An opening/closing device 90 is provided in a region of the sidewall portion 2b in which the carry-in/out port 2x is formed and the vicinity thereof. The opening/closing device 90 includes a shutter 91 that is openable and closable to form the carry-in/out port 2x, and a shutter driving section 92 that drives the shutter 91. In fig. 2, the shutter 91 is shown in thick two-dot chain lines. The shutter driving section 92 drives the shutter 91 so as to open the carry-in/out port 2x when the substrate W is carried in and out of the substrate cleaning apparatus 1. Thereby, the shutter 91 is opened. The shutter driving section 92 drives the shutter 91 so as to close the carry-in/carry-out port 2x at the time of cleaning the substrate W in the substrate cleaning apparatus 1. Thereby, the shutter 91 is closed.

A base device 30 is provided in the center of the bottom surface portion 2 a. The base device 30 includes a linear guide 31, a movable base 32, and a base driving unit 33. The linear guide 31 includes 2 rails and is provided so as to extend from the vicinity of the side wall portion 2b to the vicinity of the side wall portion 2c in the Y direction in a plan view. The movable base 32 is provided so as to be movable in the Y direction on 2 tracks of the linear guide 31. The base driving unit 33 includes, for example, a pulse motor, and moves the movable base 32 in the Y direction on the linear guide 31.

The movable base 32 is provided with the lower holding device 20 and the lower surface cleaning device 50 so as to be aligned in the Y direction. The lower holding device 20 includes a suction holding portion 21 and a suction holding driving portion 22. The suction holding portion 21 is a so-called spin chuck, and has a circular suction surface capable of sucking and holding the lower surface of the substrate W, and is configured to be rotatable about an axis extending in the up-down direction (axis in the Z direction). In the following description, when the substrate W is suctioned and held by the suction holding portion 21, a region of the lower surface of the substrate W to be suctioned by the suction surface of the suction holding portion 21 is referred to as a lower surface center region. On the other hand, a region of the lower surface of the substrate W surrounding the lower surface center region is referred to as a lower surface outer region.

The suction holding driving section 22 includes a motor. The motor of the suction holding driving unit 22 is provided on the movable base 32 such that the rotation shaft protrudes upward. The suction holding portion 21 is attached to an upper end portion of the rotation shaft of the suction holding driving portion 22. In addition, a suction path for suction-holding the substrate W in the suction-holding portion 21 is formed on the rotation shaft of the suction-holding driving portion 22. The suction path is connected to an intake device, not shown. The suction holding driving unit 22 rotates the suction holding unit 21 about the rotation axis.

The movable base 32 is further provided with a delivery device 40 near the lower holding device 20. The delivery device 40 includes a plurality (3 in this example) of support pins 41, pin coupling members 42, and pin lift driving units 43. The pin connecting member 42 is formed so as to surround the suction holding portion 21 in a plan view, and connects the plurality of support pins 41. The plurality of support pins 41 extend upward from the pin coupling member 42 by a predetermined length in a state of being coupled to each other by the pin coupling member 42. The pin lifting drive unit 43 lifts and lowers the pin connecting member 42 on the movable base 32. Thereby, the plurality of support pins 41 are lifted and lowered relative to the suction holding portion 21.

The lower surface cleaning apparatus 50 includes a lower surface brush 51, 2 substrate nozzles 52, 2 brush nozzles 52a, 52b, a gas ejection section 53, a lifting support section 54, a lower surface brush rotation driving section 55a, and a lower surface brush lifting driving section 55b. As shown in fig. 2, the elevation support 54 is provided on the movable base 32 so as to be able to elevate. The lifting support portion 54 has an upper surface 54u inclined obliquely downward in a direction away from the suction holding portion 21 (rearward in this example).

As shown in fig. 1, the lower surface brush 51 has a circular outer shape in a plan view, and is formed relatively large in the present embodiment. Specifically, the diameter of the lower surface brush 51 is larger than the diameter of the suction surface of the suction holding portion 21, for example, 1.3 times the diameter of the suction surface of the suction holding portion 21. In addition, the diameter of the lower surface brush 51 is larger than 1/3 of the diameter of the substrate W and smaller than 1/2 of the diameter of the substrate W. The diameter of the substrate W is 300mm, for example.

The lower surface brush 51 is a sponge brush, and is preferably made of a material having relatively low wettability such as a fluororesin. In this case, the adhesion of contaminants to the lower surface brush 51 is reduced. Thus, the lower surface brush 51 is less likely to be contaminated. In this example, the lower surface brush 51 is formed of PTFE (polytetrafluoroethylene), but the embodiment is not limited thereto. The lower surface brush 51 may be formed of a relatively soft resin material such as PVA (polyvinyl alcohol).

The lower surface brush 51 has a cleaning surface capable of contacting the lower surface of the substrate W. The lower surface brush 51 is attached to the upper surface 54u of the lifting support 54 so that the cleaning surface faces upward and so that the cleaning surface can rotate about an axis extending in the up-down direction through the center of the cleaning surface.

Each of the 2 substrate nozzles 52 is mounted on the upper surface 54u of the elevation support 54 so as to be positioned near the lower surface brush 51 with the liquid ejection port facing upward. The substrate nozzle 52 is connected to a lower surface cleaning liquid supply unit 56 (fig. 5). The lower surface cleaning liquid supply unit 56 supplies a cleaning liquid for cleaning a substrate to the substrate nozzle 52. When the substrate W is cleaned by the lower surface brush 51, the substrate nozzle 52 ejects the cleaning liquid supplied from the lower surface cleaning liquid supply unit 56 onto the lower surface of the substrate W. In the present embodiment, pure water is used as the cleaning liquid supplied to the substrate nozzle 52.

The 2 brush nozzles 52a and 52b are used to wash the lower surface brush 51. Each of the 2 brush nozzles 52a, 52b is mounted on the upper surface 54u of the elevating support 54 so as to be located in the vicinity of the lower surface brush 51. The brush nozzles 52a and 52b are connected to a brush cleaning liquid supply portion 57 (fig. 5). The brush cleaning liquid supply unit 57 supplies the brush cleaning liquid to the brush nozzles 52a and 52 b. Thus, the cleaning liquid supplied from the cleaning liquid supply unit 57 is discharged from the brush nozzles 52a and 52b toward the lower surface brush 51. The cleaning liquid supplied to the 2 substrate nozzles 52 is the same as the cleaning liquid supplied to the 2 brush nozzles 52a, 52 b. Therefore, in the present embodiment, pure water is used as the cleaning liquid supplied to the brush nozzles 52a and 52 b.

A brush nozzle 52a is provided at a position laterally to the lower surface brush 51 in such a manner that a front end portion (liquid ejection port) thereof faces the position above the lower surface brush 51. Therefore, the cleaning liquid discharged from the brush nozzle 52a is guided to the center portion of the cleaning surface of the lower surface brush 51 so as to draw a parabola from a position laterally of the lower surface brush 51. The other brush nozzle 52b is provided at a position laterally to the lower surface brush 51 such that a front end portion (liquid ejection port) thereof faces a side portion (outer peripheral end portion) of the lower surface brush 51. Therefore, the cleaning liquid discharged from the brush nozzle 52b is guided from a position laterally to the lower surface brush 51 to a side portion (outer peripheral end portion) of the lower surface brush 51.

As described below, the lower surface brush 51 basically rotates during the power-on of the substrate cleaning apparatus 1. Therefore, when the cleaning liquid is ejected from the brush nozzles 52a, 52b toward the lower surface brush 51, the entire lower surface brush 51 is smoothly rinsed by the cleaning liquid. In addition, the cleaning surface of the lower surface brush 51 is uniformly wetted. Thereby, the lower surface brush 51 is prevented from being locally hardened.

The gas ejection portion 53 is a slit-shaped gas ejection nozzle having a gas ejection port extending in one direction. The gas ejection section 53 is provided on the movable base 32 so as to be capable of being lifted and lowered independently of other components of the lower surface cleaning apparatus 50. A description of a driving unit for elevating and lowering the gas discharge unit 53 is omitted. The gas injection port of the gas injection part 53 is located between the lower surface brush 51 and the adsorption holding part 21 in a plan view and faces upward. The gas discharge unit 53 is connected to a discharge gas supply unit 58 (fig. 5).

The ejected gas supply unit 58 supplies gas to the gas ejection unit 53. In the present embodiment, an inert gas such as nitrogen is used as the gas supplied to the gas ejection section 53. The gas ejection unit 53 ejects the gas supplied from the ejected gas supply unit 58 onto the lower surface of the substrate W when the substrate W is cleaned by the lower surface brush 51 and when the lower surface of the substrate W is dried, which will be described later. In this case, a belt-like air curtain extending in the X direction is formed between the lower surface brush 51 and the suction holding portion 21.

The lower surface brush rotation driving section 55a of fig. 1 includes a motor, and basically rotates the lower surface brush 51 during the power-on period of the substrate cleaning apparatus 1. The lower brush lifting/lowering driving unit 55b includes a stepping motor or a cylinder, and lifts and lowers the lifting/lowering support unit 54 on the movable base 32.

A shield device 60 is further provided in the central portion of the bottom surface portion 2 a. The shroud device 60 includes a shroud 61 and a shroud driving portion 62. The cover 61 is provided so as to surround the lower holder 20 and the base device 30 in a plan view and is capable of being lifted and lowered. In fig. 2, the shield 61 is shown in broken lines. The shield driving unit 62 moves the shield 61 between the lower shield position and the upper shield position according to which portion of the lower surface of the substrate W is washed by the lower surface brush 51. The lower shield position is a height position where the upper end of the shield 61 is located below the substrate W suctioned and held by the suction holding portion 21. The upper shroud position is a height position above the suction holding portion 21 of the upper end portion of the shroud 61. In a state where the cover 61 is positioned at the upper cover position, the cover 61 and the suction holding portion 21 overlap each other in a side view. Therefore, the upper shield position can be said to be a height position of the shield 61 corresponding to the height position of the substrate W suctioned and held by the suction holding portion 21.

A pair of upper holding devices 10A and 10B are provided above the cover 61 so as to face each other across the base device 30 in a plan view. The upper holding device 10A includes a lower chuck 11A, an upper chuck 12A, a lower chuck driving section 13A, and an upper chuck driving section 14A. The upper holding device 10B includes a lower chuck 11B, an upper chuck 12B, a lower chuck driving section 13B, and an upper chuck driving section 14B.

Fig. 3 is an external perspective view of the lower chucks 11A, 11B of fig. 1 and 2. In fig. 3, the lower chucks 11A, 11B are shown in bold solid lines. The upper chucks 12A, 12B are shown in phantom. In the perspective view of the external view of fig. 3, in order to easily understand the shape of the lower chucks 11A, 11B, the expansion/contraction ratio of each portion is changed with respect to the perspective view of the external view of fig. 2.

As shown in fig. 3, the lower chucks 11A and 11B are symmetrically arranged with respect to a vertical plane extending in the Y direction (front-rear direction) through the center of the suction holding portion 21 in a plan view, and are provided so as to be movable in the X direction in a common horizontal plane. The lower chucks 11A, 11B each have 2 support tabs 200. Each support piece 200 is provided with an inclined support surface 201 and a movement limiting surface 202.

In the lower chuck 11A, the inclined support surface 201 of each support piece 200 can support the outer peripheral end portion of the substrate W from below and is formed so as to extend obliquely downward toward the lower chuck 11B. The movement restricting surface 202 extends upward from the upper end of the inclined support surface 201 by a predetermined distance, and forms a step at the upper end of the lower chuck 11A. On the other hand, in the lower chuck 11B, the inclined support surface 201 of each support piece 200 can support the outer peripheral end portion of the substrate W from below and is formed so as to extend obliquely downward toward the lower chuck 11A. The movement restricting surface 202 extends upward from the upper end of the inclined support surface 201 by a predetermined distance, and forms a step at the upper end of the lower chuck 11B.

The lower chuck driving sections 13A, 13B of fig. 1 include an air cylinder or a motor as an actuator. The lower chuck driving sections 13A and 13B move the lower chucks 11A and 11B so that the lower chucks 11A and 11B are close to each other or so that the lower chucks 11A and 11B are distant from each other. Here, when the target positions of the lower chucks 11A, 11B in the X direction are set in advance, the lower chuck driving sections 13A, 13B can individually adjust the positions of the lower chucks 11A, 1iB in the X direction based on the information of the target positions. For example, the distance between the lower chucks 11A, 11B can be made smaller than the outer diameter of the substrate W. In this case, the substrate W can be placed on the plurality of inclined support surfaces 201 of the lower chucks 11A and 11B.

Fig. 4 is an external perspective view of the upper chucks 12A, 12B of fig. 1 and 2. In fig. 4, the upper chucks 12A, 12B are shown in bold solid lines. The lower chucks 11A, 11B are shown in broken lines. In the perspective view of the external view of fig. 4, in order to easily understand the shape of the upper chucks 12A, 12B, the expansion/contraction ratio of each portion is changed with respect to the perspective view of the external view of fig. 2.

As shown in fig. 4, the upper chucks 12A and 12B are disposed symmetrically with respect to a vertical plane extending in the Y direction (front-rear direction) through the center of the suction holding portion 21 in a plan view, and are provided so as to be movable in the X direction in a common horizontal plane, as are the lower chucks 11A and 11B. The upper collets 12A, 12B each have 2 retention tabs 300. Each holding piece 300 has an abutment surface 301 and a protruding portion 302.

In the upper chuck 12A, the contact surface 301 of each holding piece 300 is formed at the lower portion of the front end of the holding piece 300 so as to face the upper chuck 12B, and is orthogonal to the X direction. The protruding portion 302 is formed so as to protrude from the upper end of the abutment surface 301 toward the upper chuck 12B by a predetermined distance. On the other hand, in the upper chuck 12B, the contact surface 301 of each holding piece 300 is formed at the lower portion of the tip end of the holding piece 300 so as to face the upper chuck 12A, and is orthogonal to the X direction. The protruding portion 302 is formed so as to protrude from the upper end of the abutment surface 301 toward the upper chuck 12A by a predetermined distance.

The upper chuck driving sections 14A, 14B of fig. 1 include an air cylinder or a motor as an actuator. The upper chuck driving units 14A and 14B move the upper chucks 12A and 12B so that the upper chucks 12A and 12B are close to each other or so that the upper chucks 12A and 12B are distant from each other. Here, when the target positions of the upper chucks 12A, 12B in the X direction are set in advance, the upper chuck driving sections 14A, 14B can individually adjust the positions of the upper chucks 12A, 12B in the X direction based on the information of the target positions.

In the upper holding devices 10A and 10B, for example, the upper chucks 12A and 12B move toward the outer peripheral end portions of the substrates W placed on the lower chucks 11A and 11B. The 2 abutment surfaces 301 of the upper chuck 12A and the 2 abutment surfaces 301 of the upper chuck 12B are brought into contact with portions of the outer peripheral end portion of the substrate W, whereby the outer peripheral end portion of the substrate W is held, and the substrate W is firmly fixed.

The upper holding devices 10A and 10B are switched to three states, i.e., a retracted state, a mountable state, and a holding state, by adjusting the distance between the lower chucks 11A and 11B and the distance between the upper chucks 12A and 12B in a predetermined combination.

The retracted state of the upper holding devices 10A, 10B is a state in which the distance between the lower chucks 11A, 11B is larger than the outer diameter of the substrate W and the distance between the upper chucks 12A, 12B is larger than the outer diameter of the substrate W. In this case, the substrate W in the horizontal posture can be moved in the up-down direction (Z direction) between the lower chucks 11A and 11B and between the upper chucks 12A and 12B.

The upper holding devices 10A and 10B are placed in a state in which the distance between the lower chucks 11A and 11B is smaller than the outer diameter of the substrate W and the distance between the upper chucks 12A and 12B is larger than the outer diameter of the substrate W. In this case, the substrate W can be placed on the plurality of inclined support surfaces 201 of the lower chucks 11A and 11B in a horizontal posture while preventing interference between the substrate W and the upper chucks 12A and 12B. The substrate W placed on the lower chucks 11A and 11B can be lifted.

The holding state of the upper holding devices 10A and 10B is switchable only when the upper holding devices 10A and 10B are in a state where they can be placed and the substrates W are placed on the lower chucks 11A and 11B. Specifically, the upper holding devices 10A and 10B are held by the lower chucks 11A and 11B at a distance smaller than the outer diameter of the substrate W, and the upper chucks 12A and 12B are brought into contact with the outer peripheral ends of the substrate W on the lower chucks 11A and 11B to fix the substrate W.

Here, in the upper holding devices 10A and 10B, when switching from the mountable state to the holding state, the upper chucks 12A and 12B move in the X direction so as to approach each other with the substrate W interposed therebetween. At this time, the upper chucks 12A, 12B are moved specifically as follows.

First, one upper chuck moves toward the other upper chuck, stopping at a predetermined target position. Thereafter, the other upper chuck is moved toward one upper chuck to be in contact with a portion of the peripheral end of the substrate W. Further, the other upper chuck is moved toward an upper chuck until another portion of the peripheral end portion of the substrate W is in contact with the upper chuck. When the state is switched from the mountable state to the holding state in this way, the substrate W is positioned on the lower chucks 11A, 11B with the target position as a reference. Therefore, in the case where the size of the substrate W is known, by determining the target position based on the size, the center of the substrate W can be easily positioned at a planar reference position rp (fig. 6) described later.

In the upper holding devices 10A and 10B, when switching from the holding state to the mountable state, the upper chucks 12A and 12B move away from each other with the substrate W interposed therebetween in the X direction. At this time, the upper chucks 12A, 12B are moved specifically as follows.

First, in a state where one upper chuck is located at a predetermined target position, the other upper chuck is moved away from the one upper chuck. After the other upper chuck is spaced apart from the substrate W, one upper chuck moves away from the other upper chuck. When the state is switched from the holding state to the mountable state in this way, the substrate W is positioned on the lower chucks 11A, 11B with the target position as a reference. Therefore, in the case where the size of the substrate W is known, by determining the target position based on the size, the center of the substrate W can be easily positioned at a planar reference position rp (fig. 6) described later.

As shown in fig. 1, 2 side wall portions 2c and 2b facing each other in the Y direction are provided with a light projecting portion 19a and a light receiving portion 19b, respectively. The light projecting section 19a includes a light projecting element. The light receiving unit 19b includes a light receiving element. The light projecting section 19a and the light receiving section 19b constitute a transmission-type photoelectric sensor 19 (fig. 5).

The light projecting section 19a and the light receiving section 19b are arranged such that the light projecting section 19a is positioned below the light receiving section 19 b. The light projecting section 19a and the light receiving section 19b are arranged as follows: when the substrate W is held by the upper holding devices 10A and 10B, a straight line connecting the light projecting portion 19a and the light receiving portion 19B traverses the substrate W.

In the substrate cleaning apparatus 1, when the substrate W is placed on the upper holding devices 10A and 10B in the placeable state, light is emitted from the light emitting portion 19a toward the light receiving portion 19B (see the arrow of the one-dot chain line in fig. 2). When the substrates W are normally placed on the upper holding devices 10A and 10B, the light emitted from the light projecting portion 19a is blocked by the substrates W. Therefore, the light receiving unit 19b does not receive the light emitted from the light projecting unit 19 a. On the other hand, when the substrate W is not normally placed on the upper holding devices 10A and 10B, the light emitted from the light emitting section 19a is incident on the light receiving section 19B without being blocked by the substrate W. Therefore, it can be determined whether or not the substrate W is normally placed on the upper holding devices 10A and 10B based on the light receiving signal output from the light receiving element of the light receiving portion 19B. In the following description, this determination is referred to as a substrate placement state determination.

In the substrate cleaning apparatus 1, light is emitted from the light emitting section 19a toward the light receiving section 19B also when the upper holding devices 10A, 10B are switched from the mountable state to the holding state. Accordingly, for the same reason as described above, it can be determined whether or not the substrate W is normally held by the upper holding devices 10A and 10B based on the light receiving signal output from the light receiving element of the light receiving unit 19B. In the following description, this determination is referred to as a substrate holding state determination.

As shown in fig. 1, the upper surface cleaning device 70 is provided on one side of the cover 61 so as to be located near the upper holding device 10B in a plan view. The upper surface cleaning apparatus 70 includes a rotation support shaft 71, an arm 72, a spray nozzle 73, and an upper surface cleaning drive section 74.

The rotation support shaft 71 is supported by the upper surface cleaning drive section 74 so as to be vertically movable and rotatable on the bottom surface section 2a so as to extend in the vertical direction. As shown in fig. 2, the arm 72 is provided above the upper holding device 10B so as to extend in the horizontal direction from the upper end portion of the rotation support shaft 71. A spray nozzle 73 is attached to the distal end portion of the arm 72.

The spray nozzle 73 is connected to an upper surface cleaning fluid supply unit 75 (fig. 5). The upper surface cleaning fluid supply unit 75 supplies cleaning liquid and gas to the spray nozzle 73. In the present embodiment, pure water is used as the cleaning liquid supplied to the spray nozzle 73, and an inert gas such as nitrogen is used as the gas supplied to the spray nozzle 73. When cleaning the upper surface of the substrate W, the spray nozzle 73 mixes the cleaning liquid supplied from the upper surface cleaning fluid supply unit 75 with the gas to generate a mixed fluid, and sprays the generated mixed fluid downward.

The upper surface cleaning driving unit 74 includes one or more pulse motors, air cylinders, and the like, and lifts and lowers the rotation support shaft 71 and rotates the rotation support shaft 71. According to the above configuration, the spray nozzle 73 is moved in an arc shape on the upper surface of the substrate W sucked and held and rotated by the suction holding portion 21, whereby the entire upper surface of the substrate W can be cleaned.

As shown in fig. 1, an end washing device 80 is provided on the other side of the cover 61 so as to be located near the upper holding device 10A in a plan view. The end washing apparatus 80 includes a rotation support shaft 81, an arm 82, a bevel brush (bevel brush) 83, and a bevel brush driving unit 84.

The rotation support shaft 81 is supported by the inclined brush driving unit 84 so as to be vertically movable and rotatable on the bottom surface 2a so as to extend in the vertical direction. As shown in fig. 2, the arm 82 is provided above the upper holding device 10A so as to extend in the horizontal direction from the upper end portion of the rotation support shaft 81. A bevel brush 83 is provided at the tip of the arm 82 so as to protrude downward and be rotatable about an axis in the up-down direction.

The upper half of the bevel brush 83 has an inverted truncated cone shape and the lower half has a truncated cone shape. According to the bevel brush 83, the peripheral end portion of the substrate W can be cleaned by the central portion of the peripheral surface in the up-down direction.

The bevel brush driving unit 84 includes one or more pulse motors, air cylinders, and the like, and lifts and lowers the rotation support shaft 81 and rotates the rotation support shaft 81. According to the above configuration, the central portion of the outer peripheral surface of the bevel brush 83 is brought into contact with the outer peripheral end portion of the substrate W sucked and held and rotated by the suction holding portion 21, whereby the entire outer peripheral end portion of the substrate W can be cleaned.

Here, the bevel brush driving part 84 further includes a motor built in the arm 82. The motor rotates the bevel brush 83 provided at the front end portion of the arm 82 about an axis in the up-down direction. Therefore, when the peripheral end portion of the substrate W is cleaned, the cleaning force of the bevel brush 83 against the peripheral end portion of the substrate W is improved by rotating the bevel brush 83.

2. Control system of substrate cleaning apparatus 1

Fig. 5 is a block diagram showing a configuration of a control system of the substrate cleaning apparatus 1 of fig. 1. The substrate cleaning apparatus 1 includes a control device 170. The control device 170 includes a CPU (central processing unit), a RAM (random access memory), a ROM (read only memory), and a storage device. The RAM is used as a work area of the CPU. R0M stores the system program. The storage device stores a substrate cleaning program.

As shown in fig. 5, the control device 170 includes a chuck control unit 9A, a suction control unit 9B, a base control unit 9C, a delivery control unit 9D, a lower surface cleaning control unit 9E, a shield control unit 9F, an upper surface cleaning control unit 9G, a bevel cleaning control unit 9H, and a carry-in/out control unit 9I as functional units for controlling the operations of the respective plurality of substrate cleaning apparatuses 1. The functional unit of the control device 170 is realized by the CPU executing the substrate cleaning program stored in the storage device on the RAM. Part or all of the functional units of the control device 170 may be realized by hardware such as an electronic circuit.

The chuck control section 9A controls the lower chuck driving sections 13A and 13B and the upper chuck driving sections 14A and 14B to receive the substrate W carried into the substrate cleaning apparatus 1 and hold it at a position above the suction holding section 21. The chuck control unit 9A controls the photosensor 19 to determine the substrate placement state and the substrate holding state. The suction control section 9B controls the suction holding driving section 22 to suction-hold the substrate W by the suction holding section 21 and rotate the suction-held substrate W.

The susceptor control unit 9C controls the susceptor driving unit 33 so that the movable susceptor 32 moves with respect to the substrates W held by the upper holding devices 10A and 10B. The transfer control unit 9D controls the pin lift driving unit 43 to move the substrate W between the height position of the substrate W held by the upper holding devices 10A and 10B and the height position of the substrate W held by the suction holding unit 21.

The lower surface cleaning control unit 9E controls the lower surface brush rotation driving unit 55a, the lower surface brush lifting driving unit 55b, the lower surface cleaning liquid supply unit 56, and the ejection gas supply unit 58 to clean the lower surface of the substrate W. In addition, the lower surface cleaning control section 9E controls the brush cleaning liquid supply section 57 to clean the lower surface brush 51. The shield control unit 9F controls the shield driving unit 62 so that the cleaning liquid scattered from the substrate W is caught by the shield 61 when cleaning the substrate W suctioned and held by the suction holding unit 21.

The upper surface cleaning control unit 9G controls the upper surface cleaning driving unit 74 and the upper surface cleaning fluid supply unit 75 to clean the upper surface of the substrate W suctioned and held by the suction holding unit 21. The bevel cleaning control section 9H controls the bevel brush driving section 84 to clean the peripheral end portion of the substrate W suctioned and held by the suction holding section 21. The carry-in/carry-out control section 9I controls the barrier driving section 92 to open and close the carry-in/carry-out port 2x of the unit case 2 when the substrate W is carried in and carried out of the substrate cleaning apparatus 1.

3. Operation of the substrate cleaning apparatus 1

Fig. 6 to 20 are schematic diagrams for explaining an example of the operation of the substrate cleaning apparatus 1 of fig. 1. In each of fig. 6 to 20, the upper stage shows a plan view of the substrate cleaning apparatus 1. The middle section shows a side view of the lower holding device 20 and its peripheral portion as viewed along the Y direction, and the lower section shows a side view of the lower holding device 20 and its peripheral portion as viewed along the X direction. The side view of the middle section corresponds to the side view of line A-A of fig. 1, and the side view of the lower section corresponds to the side view of line B-B of fig. 1. In order to easily understand the shape and the operation state of each constituent element of the substrate cleaning apparatus 1, the expansion/contraction ratio of a part of the constituent elements is different between the top view of the upper stage and the side views of the middle and lower stages. In fig. 6 to 21, the shield 61 is shown by a two-dot chain line, and the outline of the substrate W is shown by a thick one-dot chain line.

Further, in the top view of the upper stage of fig. 6 to 20, the state of the shutter 91 or the change in the state thereof is shown in a character string, and the state of the upper holding devices 10A, 10B or the change in the state thereof is shown in a character string. In the side view of the middle section in fig. 6 to 21, the state of the lower holding device 20 or the change in the state thereof is shown in a character string. The state of the lower holding device 20 indicates whether or not the suction holding portion 21 rotates.

First, as shown in fig. 6, a state in which the substrate W is not present in the unit case 2 is assumed as an initial state (standby state). In an initial state before the substrate W is carried into the substrate cleaning apparatus 1, the shutter 91 of the opening/closing device 90 is in a closed state. Therefore, the carry-in/carry-out port 2x is closed by the shutter 91. The upper holding devices 10A and 10B are in a retracted state. Accordingly, the lower chucks 11A, 11B are maintained in a state where the distance from each other is sufficiently larger than the diameter of the substrate W. The upper chucks 12A and 12B are also maintained at a distance from each other sufficiently greater than the diameter of the substrate W. The lower holding device 20 is in a stopped state in which rotation of the suction holding portion 21 is stopped.

In the initial state, the movable base 32 of the base device 30 is disposed such that the center of the suction holding portion 21 is located at the center of the shield 61 in a plan view. At this time, the lower surface cleaning apparatus 50 is located on the movable base 32 at a position spaced apart from the suction holding portion 21 in the Y direction by a predetermined distance. Further, the cleaning surface (upper end portion) of the lower surface brush 51 of the lower surface cleaning apparatus 50 is located below the suction holding portion 21. The position of the lower surface brush 51 in the up-down direction (Z direction) in the initial state is referred to as a lower surface brush standby position. In the case where the substrate W is held by the suction holding portion 21, the lower surface brush standby position is located below the substrate W. In particular, in the present embodiment, the lower surface brush standby position corresponds to the lowest position in the vertical range in which the lower surface brush 51 can be lifted by the lifting support portion 54.

In the initial state, the delivery device 40 is positioned with the plurality of support pins 41 positioned below the suction holding portion 21. Further, the shield 61 of the shield arrangement 60 is in the lower shield position. In the following description, the center position of the shroud 61 in a plan view is referred to as a planar reference position rp. The position of the movable base 32 on the bottom surface 2a when the center of the suction holding portion 21 is at the planar reference position rp in plan view is referred to as a reference horizontal position.

In the initial state, the spray nozzle 73 of the upper surface cleaning apparatus 70 is spaced apart from the shroud 61 by a predetermined distance in the X direction, and is held at a standby position above the upper holding devices 10A and 10B and the shroud 61. Hereinafter, the standby position of the nozzle 73 in this initial state is referred to as a nozzle standby position.

The bevel brush 83 of the end washing device 80 is spaced apart from the shroud 61 in the X direction by a predetermined distance on the other side, and is held at a standby position above the upper holding devices 10A and 10B and the shroud 61. Hereinafter, the standby position of the inclined brush 83 in the initial state is referred to as an inclined brush standby position.

As shown in fig. 7, when the substrate W is carried into the substrate cleaning apparatus 1, the shutter 91 is switched from the closed state to the open state at a point immediately before the substrate W enters the unit case 2. As indicated by a thick solid arrow a1 in fig. 7, the upper holding devices 10A and 10B are switched from the retracted state to the mountable state by bringing the lower chucks 11A and 11B closer to each other.

As described above, the operation of switching the shutter 91 from the closed state to the open state is referred to as a shutter opening operation. The operation of switching the upper holding devices 10A and 10B from the retracted state to the mountable state is referred to as a mounting preparation operation. In this case, the chuck control unit 9A and the carry-in/out control unit 9I in fig. 5 start respective operations so that at least a part of the shutter opening operation period overlaps with at least a part of the mounting preparation operation period.

Next, as shown by a thick solid arrow a2 in fig. 8, a hand (substrate holding portion) Ma of a substrate transfer robot, not shown, enters the inside of the unit case 2 through the carry-in/carry-out port 2x, and moves the substrate W to a substantially central position in the unit case 2. At this time, the substrate W held by the hand Ma is positioned between the lower chuck 11A and the upper chuck 12A and between the lower chuck 11B and the upper chuck 12B.

Next, the hand Ma descends. At this time, the upper holding devices 10A and 10B are in a mountable state. Therefore, the hand Ma is moved to a position lower than the upper holding devices 10A and 10B, and the substrate W held by the hand Ma is placed on the pair of lower chucks 11A and 11B. Thus, the plurality of portions of the peripheral edge portion of the lower surface of the substrate W are supported by the plurality of support pieces 200 (fig. 3) of the lower chucks 11A, 11B, respectively. Then, the empty hand Ma is withdrawn from the carry-in/out port 2 x.

Next, after the hand Ma is withdrawn, as shown in fig. 9, the shutter 91 is switched from the open state to the closed state. Further, the substrate placement state determination is performed by the photoelectric sensor 19 (fig. 5). Specifically, light is emitted from the light projecting section 19a toward the light receiving section 19B, and it is determined whether or not the substrate W is normally mounted on the upper holding devices 10A, 10B based on the light receiving signal of the light receiving section 19B. Here, when it is determined that the substrate W is not normally placed, the processing of the substrate W is stopped.

After the hand Ma is withdrawn, the upper chucks 12A and 12B are brought close to each other as indicated by a thick solid arrow a3 in fig. 9, whereby the plurality of holding pieces 300 of the upper chucks 12A and 12B are brought into contact with the outer peripheral end portion of the substrate W. Thereby, the upper holding devices 10A and 10B are switched from the mountable state to the holding state, and the substrates W are held by the upper holding devices 10A and 10B. At the time of this switching, after one of the upper chucks 12A, 12B is moved to the target position as described above, the other upper chuck is moved toward the one upper chuck, thereby accurately positioning the substrate W in the X direction.

At this time, further, a substrate holding state determination is performed by the photosensor 19 (fig. 5). Specifically, light is emitted from the light projecting section 19a toward the light receiving section 19B, and it is determined whether or not the substrate W is normally held by the upper holding devices 10A, 10B based on the light receiving signal of the light receiving section 19B. Here, in the case where it is determined that the substrate W is not normally held, the processing of the substrate W is stopped.

In the substrate cleaning apparatus 1 of the present embodiment, the central area of the lower surface of the substrate W is cleaned by the lower surface brush 51 in a state where the substrate W is held by the upper holding devices 10A, 10B. Therefore, after the hand Ma is withdrawn, the lower surface brush 51 is moved to a position facing a predetermined area (initial contact area) to be initially contacted on the lower surface of the substrate W in order to prepare for cleaning the central area of the lower surface of the substrate W. In this example, the initial contact area is a central area of the lower surface of the substrate W.

In this case, specifically, the movable base 32 moves in the Y direction so that the lower surface brush 51 overlaps the initial contact area of the substrate W in a plan view. The elevation support 54 is elevated so that the lower surface brush 51 approaches a height position close to the lower surface of the substrate W. More specifically, in the example of fig. 9, as indicated by a thick solid arrow a4, the movable base 32 is moved forward from the reference horizontal position until the center of the lower surface brush 51 overlaps the planar reference position rp in a plan view. As indicated by a thick solid arrow a5 in fig. 9, the elevation support 54 is elevated so that the lower surface brush 51 approaches from the lower surface brush standby position to a position near the substrate W (a position spaced apart from the substrate W by about 5 mm). The elevation support 54 may be elevated to a position where the lower surface brush 51 contacts the lower surface of the substrate W.

As described above, the operation of switching the shutter 91 from the open state to the closed state is referred to as a shutter closing operation. The operation of switching the upper holding devices 10A and 10B from the mountable state to the holding state is referred to as a holding switching operation. Further, the operation of moving the lower surface brush 51 so as to overlap the initial contact area of the substrate W in a plan view and the operation of moving the lower surface brush 51 from the lower surface brush standby position toward the lower surface of the substrate W held by the upper holding devices 10A and 10B in the vertical direction are referred to as a1 st brush preparation operation. In this case, the chuck control unit 9A, the base control unit 9C, the lower surface cleaning control unit 9E, and the carry-in/out control unit 9I in fig. 5 start respective operations so that at least a part of the barrier closing operation period and the switching operation period overlaps with at least a part of the 1 st brush preparation operation period.

After the hand Ma is withdrawn, the suction holding portion 21 starts to rotate as indicated by a thick solid arrow a6 in fig. 9. That is, the lower holding device 20 is switched from the stopped state to the rotated state. The switching of the lower holding device 20 is performed, for example, after the substrate W enters the unit case 2 and until the substrate W is held by the upper holding devices 10A and 10B.

Next, the lower surface brush 51 is pressed against an initial contact area (lower surface center area in this example) of the substrate W. As shown by a thick solid arrow a7 in fig. 10, the lower surface brush 51 rotates (rotates) about an axis in the up-down direction. Thereby, the contaminant adhering to the central area of the lower surface of the substrate W is physically peeled off by the lower surface brush 51.

In the lower stage of fig. 10, an enlarged side view of a portion of the lower surface brush 51 in contact with the lower surface of the substrate W is shown in the bubble frame. As shown in the bubble frame, the substrate nozzle 52 and the gas discharge portion 53 are held at positions close to the lower surface of the substrate W in a state where the lower surface brush 51 is in contact with the substrate W. At this time, as indicated by the outline arrow a51, the substrate nozzle 52 ejects the cleaning liquid toward the lower surface of the substrate W at a position near the lower surface brush 51. Thereby, the cleaning liquid supplied from the substrate nozzle 52 to the lower surface of the substrate W is guided to the contact portion of the lower surface brush 51 and the substrate W, and the contaminant removed from the back surface of the substrate W by the lower surface brush 51 is rinsed away by the cleaning liquid.

Here, the upper surface 54u of the elevation support portion 54 is inclined obliquely downward in a direction away from the suction holding portion 21. In this case, when the cleaning liquid containing the contaminant is dropped from the lower surface of the substrate W onto the lifting support portion 54, the cleaning liquid caught by the upper surface 54u is guided in a direction away from the suction holding portion 21.

When the lower surface of the substrate W is cleaned by the lower surface brush 51, the gas ejection portion 53 ejects the gas toward the lower surface of the substrate W at a position between the lower surface brush 51 and the suction holding portion 21 as indicated by a hollow arrow a52 in the bubble frame in fig. 10. In the present embodiment, the gas ejection portion 53 is attached to the movable base 32 so that the gas ejection port extends in the X direction. In this case, when the gas is injected from the gas injection part 53 toward the lower surface of the substrate W, a band-like gas curtain extending in the X direction is formed between the lower surface brush 51 and the suction holding part 21. This prevents the cleaning liquid containing the contaminant from scattering toward the adsorption holding portion 21 when the lower surface of the substrate W is cleaned by the lower surface brush 51. Therefore, the cleaning liquid containing the contaminant is prevented from adhering to the suction holding portion 21 when the lower surface of the substrate W is cleaned by the lower surface brush 51, and the suction surface of the suction holding portion 21 is kept clean.

In the example of fig. 10, the gas discharge portion 53 discharges the gas obliquely upward from the gas discharge portion 53 toward the lower surface brush 51 as indicated by the hollow arrow a52, but the present invention is not limited thereto. The gas ejection portion 53 may eject the gas from the gas ejection portion 53 toward the lower surface of the substrate W along the Z direction.

As described above, the lower holding device 20 is continuously in a rotated state during cleaning of the central region of the lower surface of the substrate W. Thus, even when droplets of the cleaning liquid or the like used for cleaning the substrate W drop onto the suction holding portion 21, the droplets or the like are thrown off from the rotating suction holding portion 21. This prevents droplets of the cleaning liquid from remaining on the adsorption holding portion 21.

Next, in the state of fig. 10, after the cleaning of the central area of the lower surface of the substrate W is completed, the elevating support 54 is lowered so that the cleaning surface of the lower surface brush 51 is spaced apart from the substrate W by a predetermined distance. In addition, the ejection of the cleaning liquid from the substrate nozzle 52 to the substrate W is stopped. At this time, the gas ejection portion 53 continues to eject the gas onto the substrate W.

Then, as shown by a thick solid arrow a8 in fig. 11, the movable base 32 is moved to a position shifted rearward by a predetermined distance from the reference horizontal position in plan view. At this time, by continuing to spray the gas from the gas spraying portion 53 toward the substrate W, the central region of the lower surface of the substrate W is sequentially dried by the gas curtain. Further, when the central region of the lower surface of the substrate W is dried by the gas discharge portion 53, the rotation of the lower surface brush 51 may be temporarily stopped.

Next, as shown by a thick solid arrow a9 in fig. 12, the lifting support portion 54 is lowered so that the cleaning surface of the lower surface brush 51 is positioned below the suction surface (upper end portion) of the suction holding portion 21. Thereby, the lower surface brush 51 is moved to the lower surface brush standby position (height position). The lower brush 51 may be moved from a position contacting the lower surface of the substrate W to a lower brush standby position after cleaning the central region of the lower surface of the substrate W and before drying by the gas ejection section 53.

As shown by a thick solid arrow a10 in fig. 12, the upper chucks 12A and 12B are spaced apart from the outer peripheral end of the substrate W so that the upper chucks 12A and 12B are spaced apart from each other. Thereby, the upper holding devices 10A and 10B are switched from the holding state to the mountable state, and the substrate W is supported by the lower chucks 11A and 11B so as to be lifted. At the time of this switching, in a state where one of the upper chucks 12A, 12B is at the target position as described above, the other upper chuck is moved away from the one upper chuck. Thereby, the substrate W on the lower chucks 11A, 11B is accurately positioned in the X direction.

Thereafter, as shown in the middle and lower stages of fig. 13, the lower holding device 20 is switched from the rotated state to the stopped state. That is, the rotation of the suction holding portion 21 of the lower holding device 20 is stopped. This rotation is stopped for about 2sec, for example. Further, as shown by a thick solid arrow a11 in fig. 13, the movable base 32 moves forward toward the reference horizontal position. Further, as shown by a thick solid arrow a12 in fig. 13, the pin coupling member 42 is raised so that the upper end portions of the plurality of support pins 41 are located slightly above the lower chucks 11A, 11B. Thereby, the substrate W supported by the lower chucks 11A, 11B is received by the plurality of support pins 41.

Here, the delivery control unit 9D of fig. 5 causes the plurality of support pins 41 to rise at a high speed while the upper ends of the plurality of support pins 41 move from a position below the suction holding unit 21 to a height position slightly below the plurality of support pieces 200 (fig. 3) of the lower chucks 11A, 11B. On the other hand, the delivery control unit 9D moves the plurality of support pins 41 from a height position slightly lower than the plurality of support pieces 200 to a height position slightly upper than the plurality of support pieces 200 while the upper ends of the plurality of support pins 41 are being raised at a low speed. Thereby, breakage of the substrate W is prevented when the plurality of support pins 41 are in contact with the substrate W, and the time for the plurality of support pins 41 in an initial state to receive the substrate W is shortened.

As described above, the operation of switching the lower holding device 20 from the rotation state to the stop state is referred to as a rotation stop operation. The movement of the movable base 32 in the horizontal direction (forward in this example) toward the reference horizontal position is referred to as a horizontal movement. Further, the operation of raising the plurality of support pins 41 is referred to as an up-and-down movement operation. The horizontal movement of the movable base 32 and the vertical movement of the support pins 41 are performed to transfer the substrate W from the upper holding devices 10A and 10B to the lower holding device 20. In this case, the chuck control unit 9A, the base control unit 9C, and the delivery control unit 9D in fig. 5 start respective operations such that at least a part of the rotation stop operation period, at least a part of the horizontal movement operation period, and at least a part of the vertical movement operation period overlap with each other.

Next, as shown by a thick solid arrow a13 in fig. 14, the lower chucks 11A, 11B are moved away from each other. Thereby, the upper holding devices 10A and 10B are switched from the mountable state to the retracted state. At this time, the lower chucks 11A and 11B are positioned so as not to overlap the substrate W supported by the plurality of support pins 41 in a plan view. Thereby, the substrate W supported by the plurality of support pins 41 in the horizontal posture can be moved in the up-down direction (Z direction) between the upper holding devices 10A, 10B. Further, in the present embodiment, when the upper holding devices 10A and 10B are in the retracted state, the lower chucks 11A and 11B and the upper chucks 12A and 12B are positioned so as not to overlap the shroud 61 in a plan view.

Next, as shown by a thick solid arrow a14 in fig. 15, the pin coupling member 42 is lowered so that the upper end portions of the plurality of support pins 41 are positioned below the suction holding portion 21. Thereby, the substrate W supported on the plurality of support pins 41 is received by the suction holding portion 21. In this state, the suction holding portion 21 suctions and holds the lower surface central region of the substrate W.

The transfer control unit 9D in fig. 5 lowers the plurality of support pins 41 at a high speed so that the substrate W does not float while the upper ends of the plurality of support pins 41 move from a position above the suction holding unit 21 to a height position slightly above the suction holding unit 21. On the other hand, the delivery control unit 9D lowers the plurality of support pins 41 at a low speed while the upper ends of the plurality of support pins 41 move from a height position slightly above the suction holding unit 21 to a height position below the suction holding unit 21. Thereby, breakage of the substrate W is prevented when the suction holding portion 21 is brought into contact with the substrate W, and the time for the substrate W on the upper holding devices 10A, 10B to be transferred to the lower holding device 20 is shortened.

Here, as described above, the operation of the transfer device 40 in which the substrate W held by the upper holding devices 10A and 10B is lowered and transferred to the lower holding device 20 is referred to as a substrate lowering operation. In the present embodiment, the following shield raising operation, the 2 nd brush preparation operation, the 1 st nozzle preparation operation, and the 3 rd brush preparation operation are performed so as to overlap at least a part of the substrate lowering operation period of the transfer device 40.

The shield raising operation is an operation of raising the shield 61 from the lower shield position to the upper shield position as indicated by a thick solid arrow a15 in fig. 15. As described above, the lower clips 11A, 11B and the upper clips 12A, 12B do not overlap the cover 61 in plan view when the upper holding devices 10A, 10B are in the retracted state. Therefore, the shield raising operation is preferably started at a point when at least the upper holding devices 10A, 10B are in the retracted state. In this case, the shield 61 is prevented from interfering with the upper holding devices 10A and 10B when the shield 61 is lifted.

The 2 nd brush preparation operation is an operation of raising the lower surface brush 51 from the lower surface brush standby position toward the lower surface of the substrate W held by the lower holding device 20 as indicated by a thick solid arrow a16 in fig. 15. In this 2 nd brush preparation operation, as shown by a thick solid arrow a23 in fig. 17, the rotation of the lower surface brush 51 (rotation based on the axis extending in the up-down direction) is continued.

In the brush 2 preparation operation, the lower surface cleaning control unit 9E of fig. 5 temporarily stops the raising of the lower surface brush 51 or reduces the raising speed when the lower surface brush 51 reaches a height position slightly below the lower surface of the substrate W. Thereby, breakage of the substrate W when the lower surface brush 51 contacts the substrate W is prevented.

The 1 st nozzle preparation operation is an operation of moving the nozzle 73 from the nozzle standby position toward the nozzle processing position above the substrate W. At the start of the 1 st nozzle preparation operation, the spray nozzle 73 is positioned at a height above the substrate W, the upper holding devices 10A and 10B, and the shield 61. After the start of the 1 st nozzle preparation operation, the rotation support shaft 71 of the upper surface cleaning apparatus 70 rotates. Thereby, as shown by a thick solid arrow a17 in fig. 15, the spray nozzle 73 is moved from the spray nozzle standby position to a position above the substrate W. Then, the rotation support shaft 71 descends by a prescribed distance. As a result, as shown by a thick solid arrow a18 in fig. 16, the tip end of the spray nozzle 73 is lowered to a height position above the upper surface of the substrate W by about several cm, and the spray nozzle 73 reaches the spray nozzle processing position.

The 3 rd brush preparation operation is an operation of moving the bevel brush 83 from the bevel brush standby position to the bevel brush processing position in contact with the peripheral end portion of the substrate W. At the start of the 3 rd brush preparation operation, the bevel brush 83 is located at a height above the substrate W, the upper holding devices 10A and 10B, and the shield 61. After the 3 rd brush preparation operation is started, the rotation support shaft 81 of the end washing device 80 rotates. Thereby, as shown by a thick solid arrow a19 in fig. 15, the bevel brush 83 moves from the bevel brush standby position to a position above a part of the outer peripheral end portion of the substrate W. In addition, the rotation support shaft 81 descends by a predetermined distance. Thereby, as shown by a thick solid arrow a20 in fig. 16, the bevel brush 83 is lowered to a position where it contacts a part of the peripheral end of the substrate W, and reaches the bevel brush processing position.

In the 3 rd brush preparation operation, the bevel cleaning control unit 9H of fig. 5 temporarily stops the lowering of the bevel brush 83 or reduces the lowering speed at a point when the bevel brush 83 reaches a position slightly spaced from the peripheral end of the substrate W. Thereby, breakage of the substrate W when the bevel brush 83 contacts the substrate W is prevented.

Next, as shown by a thick solid arrow a21 in fig. 17, the suction holding portion 21 rotates about an axis in the up-down direction (the axial center of the rotation shaft of the suction holding driving portion 22). Thereby, the substrate W sucked and held by the suction holding portion 21 rotates in a horizontal posture. The rotation start timing of the suction holding portion 21 may be after the substrate W transferred from the transfer device 40 to the lower holding device 20 is sucked and held by the suction holding portion 21.

Thereafter, a mixed fluid of the cleaning liquid and the gas is sprayed from the spray nozzle 73 onto the upper surface of the substrate W. In addition, the rotation support shaft 71 rotates. Thereby, as shown by a thick solid arrow a22 in fig. 17, the spray nozzle 73 moves in an arc shape at a position above the substrate W to be rotated. The entire upper surface of the substrate W is cleaned by spraying the mixed fluid to the entire upper surface of the substrate W.

At this time, the bevel brush 83 rotates (rotates) about an axis in the up-down direction in a state where the central portion of the outer peripheral surface of the bevel brush 83 is in contact with the outer peripheral end portion of the substrate W. Thereby, the contaminant adhering to the outer peripheral end portion of the substrate W is physically peeled off by the bevel brush 83. The contaminant peeled off from the peripheral end portion of the substrate W is rinsed out by the cleaning liquid of the mixed fluid sprayed from the spray nozzle 73 to the substrate W.

Further, as shown by a thick solid arrow a23 in fig. 17, the lower surface brush 51 continues to rotate (spin) about the vertical axis. Further, the substrate nozzle 52 ejects the cleaning liquid toward the lower surface of the substrate W, and the gas ejection portion 53 ejects the gas toward the lower surface of the substrate W. Accordingly, the entire outer region of the lower surface of the substrate W sucked and held by the suction holding portion 21 and rotated can be cleaned by the lower surface brush 51. The rotation direction of the lower surface brush 51 may be opposite to the rotation direction of the suction holding portion 21. In this case, the outer region of the lower surface of the substrate W can be efficiently cleaned.

The lifting support 54 may be configured to be movable relative to the lower holding device 20 in the Y direction on the movable base 32. In this case, as shown by a thick solid arrow a24 in fig. 17, the elevation support 54 is moved in the Y direction on the movable base 32. Thus, the range in which cleaning can be performed by the lower surface brush 51 is widened in a state where the movable base 32 is fixed to the predetermined position.

After the cleaning of the upper surface, the peripheral end portion, and the outer region of the lower surface of the substrate W is completed, the spraying of the mixed fluid from the spray nozzle 73 onto the substrate W is stopped. As indicated by a thick solid arrow a25 in fig. 18, the spray nozzle 73 is moved to the spray nozzle standby position (initial position). As indicated by a thick solid arrow a26 in fig. 18, the bevel brush 83 is moved to the bevel brush standby position (initial position). Further, the elevation support 54 descends. Thereby, the lower surface brush 51 moves from a position in contact with the lower surface of the substrate W to a lower surface brush standby position. Further, the ejection of the cleaning liquid from the substrate nozzle 52 to the substrate W and the ejection of the gas from the gas ejection portion 53 to the substrate W are stopped. In this state, the suction holding portion 21 rotates at a high speed, so that the cleaning solution adhering to the substrate W is thrown off, and the entire substrate W is dried (spin-drying). In addition, at the time of the spin drying, the rotation of the lower surface brush 51 may be temporarily stopped.

Next, as shown by a thick solid arrow a27 in fig. 19, the shroud 61 is lowered from the upper shroud position to the lower shroud position. Thereafter, the substrate W is carried out from the unit case 2 of the substrate cleaning apparatus 1. When the substrate W is carried out from the unit case 2, the shutter 91 is switched from the closed state to the open state (shutter opening operation) at a point immediately before a hand (substrate holding portion) Ma of a substrate carrying robot (not shown) enters the unit case 2.

Then, as shown by a thick solid arrow a28 in fig. 20, a hand (substrate holding portion) Ma of the substrate transfer robot enters the unit case 2 through the carry-in/out port 2 x. Then, the hand Ma receives the substrate W on the suction holding portion 21 and withdraws from the carry-in/out port 2 x. After the hand Ma is withdrawn, the shutter 91 is switched from the open state to the closed state (shutter closing operation).

After the substrate W is carried out, a new substrate W that has not been processed may be carried into the unit case 2 (the substrate W may be replaced). In this case, the chuck control unit 9A and the carry-in/out control unit 9I in fig. 5 start respective operations so that at least a part of the shutter-open operation period for carrying out the processed substrate W overlaps with at least a part of the mounting preparation operation period for receiving the unprocessed substrate W by the upper holding devices 10A and 10B.

As described above, the lower surface brush 51 rotates substantially continuously during the power-on of the substrate cleaning apparatus 1. The lower surface cleaning control unit 9E in fig. 5 controls the brush cleaning liquid supply unit 57 so that the brush cleaning liquid is supplied from the brush cleaning liquid supply unit 57 to the brush nozzles 52a and 52b in fig. 1 during a predetermined brushing period. In this case, the cleaning period may include a period in which the substrate W is not present in the unit case 2. The brushing period may include a period in which the lower surface brush 51 is located at the lower surface brush standby position in the up-down direction.

4. Effects of

(A) In the substrate cleaning apparatus 1, the substrate W is held by the upper holding devices 10A and 10B, and a central region of the lower surface of the substrate W is cleaned. Next, the substrate W is transferred from the upper holding devices 10A and 10B to the lower holding device 20 by the substrate lowering operation of the transfer device 40. At this time, the substrate W held by the upper holding devices 10A, 10B is lowered from the height position of the upper holding devices 10A, 10B to the height position of the suction holding portion 21 of the lower holding device 20 by the substrate lowering operation of the transfer device 40. Thereafter, the substrate W is held by suction by the suction holding portion 21, and rotated. In this state, the lower surface outside region of the substrate W is cleaned by the lower surface cleaning apparatus 50. The upper surface of the substrate W is cleaned by the upper surface cleaning apparatus 70, and the peripheral end of the substrate W is cleaned by the end cleaning apparatus 80. The cleaning solution scattered from the substrate W is caught by the cover 61 and is recovered or discarded.

(B) The shield 61 is in a standby state at the lower shield position while the substrate W held by the lower holding device 20 is not being cleaned. Thereby, interference between the shield 61 and other constituent elements of the substrate cleaning apparatus 1 is prevented. Therefore, immediately before cleaning the substrate W held by the lower holding device 20, a shield raising operation is performed to raise the shield 61 from the lower shield position to the upper shield position.

The transfer control unit 9D and the shield control unit 9F in fig. 5 start respective operations so that at least a part of the substrate lowering operation period and the shield raising operation period overlap each other. Thus, compared with the case where the operations are performed so that the substrate lowering operation period and the cover raising operation period do not overlap, the period required for processing one substrate W is shortened by the amount of overlapping period of the period. Thereby, the throughput of the substrate processing is improved.

The substrate lowering operation and the shield raising operation are preferably performed so as to start or end at the same time. In this case, the overlapping period of the amounts of at least one of the two operation periods can be ensured.

(C) The transfer control unit 9D and the lower surface cleaning control unit 9E in fig. 5 start respective operations so that at least a part of the substrate lowering operation period and the 2 nd brush preparation operation period overlap each other. Thus, compared with the case where the respective operations are performed so that the substrate lowering operation period and the 2 nd brush preparation operation period do not overlap, the period required for processing one substrate W is shortened by the amount of overlapping period of the periods. Thereby, the throughput of the substrate processing is improved.

The substrate lowering operation and the 2 nd brush preparation operation are preferably performed so as to start or end simultaneously. In this case, the overlapping period of the amounts of at least one of the two operation periods can be ensured.

(D) The transfer control unit 9D and the upper surface cleaning control unit 9G in fig. 5 start respective operations so that at least a part of the substrate lowering operation period and the 1 st nozzle preparation operation period overlap each other. Thus, compared with the case where the operations are performed so that the substrate lowering operation period and the 1 st nozzle preparation operation period do not overlap, the period required for processing one substrate W is shortened by the amount of overlapping period of the periods. Thereby, the throughput of the substrate processing is improved.

The substrate lowering operation and the 1 st nozzle preparation operation are preferably performed so as to start or end simultaneously. In this case, the overlapping period of the amounts of at least one of the two operation periods can be ensured.

(E) Further, the transfer control unit 9D and the bevel cleaning control unit 9H in fig. 5 start respective operations so that at least a part of the substrate lowering operation period and the 3 rd brush preparation operation period overlap each other. Thus, compared with the case where the respective operations are performed so that the substrate lowering operation period and the 3 rd brush preparation operation period do not overlap, the period required for processing one substrate W is shortened by the amount of overlapping period of the periods. Thereby, the throughput of the substrate processing is improved.

The substrate lowering operation and the 3 rd brush preparation operation are preferably performed so as to start or end at the same time. In this case, the overlapping period of the amounts of at least one of the two operation periods can be ensured.

(F) In this embodiment, at least a part of the substrate lowering operation period, at least a part of the shield raising operation period, at least a part of the brush 2 preparation operation period, at least a part of the nozzle 1 preparation operation period, and at least a part of the brush 3 preparation operation period are superimposed on each other. In this way, when a plurality of operations are performed in parallel, the throughput of the substrate processing is further improved.

The substrate lowering operation, the shield raising operation, the 2 nd brush preparation operation, the 1 st nozzle preparation operation, and the 3 rd brush preparation operation are preferably performed so as to start or end at the same time. In this case, the throughput of the substrate processing can be further improved.

5. Other embodiments

(A) In the embodiment, at least a part of the substrate lowering operation period, at least a part of the shield raising operation period, at least a part of the brush 2 preparation operation period, at least a part of the nozzle 1 preparation operation period, and at least a part of the brush 3 preparation operation period are overlapped with each other. However, the present invention is not limited thereto.

In the case where the substrate lowering operation period overlaps at least a part of the mask raising operation period, the 2 nd brush preparation operation period, the 1 st nozzle preparation operation period, and the 3 rd brush preparation operation period may not overlap the substrate lowering operation period. In this case, since the substrate lowering operation period overlaps at least a part of the mask raising operation period, the throughput of the substrate processing is also improved as described above.

In the case where the substrate lowering operation period overlaps at least a part of the 2 nd brush preparation operation period, the shield raising operation period, the 1 st nozzle preparation operation period, and the 3 rd brush preparation operation period may not overlap the substrate lowering operation period. In this case, since the substrate lowering operation period overlaps at least a part of the brush 2 preparation operation period, the throughput of the substrate processing is also improved as described above.

In the case where the substrate lowering operation period overlaps at least a part of the 1 st nozzle preparation operation period, the shield raising operation period, the 2 nd brush preparation operation period, and the 3 rd brush preparation operation period may not overlap the substrate lowering operation period. In this case, since the substrate lowering operation period overlaps at least a part of the 1 st nozzle preparation operation period, the throughput of the substrate processing is also improved as described above.

In the case where the substrate lowering operation period overlaps at least a part of the 3 rd brush preparation operation period, the shield raising operation period, the 2 nd brush preparation operation period, and the 1 st nozzle preparation operation period may not overlap the substrate lowering operation period. In this case, since the substrate lowering operation period overlaps at least a part of the 3 rd brush preparation operation period, the throughput of the substrate processing is also improved as described above.

(B) The substrate cleaning apparatus 1 according to the above embodiment may further include a backwash nozzle for supplying a rinse liquid to an outer region of the lower surface of the substrate W suctioned and held by the lower holding device 20. Further, the substrate cleaning apparatus 1 may have a rinse nozzle for supplying a rinse solution to the upper surface of the substrate W suctioned and held by the lower holding device 20.

Fig. 21 is a schematic plan view of a substrate cleaning apparatus 1 according to another embodiment. Fig. 22 is a block diagram showing a configuration of a control system of the substrate cleaning apparatus 1 of fig. 21. The schematic top view of fig. 21 corresponds to the schematic top view of fig. 1. The block diagram of fig. 22 corresponds to the block diagram of fig. 5. Regarding the substrate cleaning apparatus 1 of fig. 21, different aspects from those of the substrate cleaning apparatus 1 of the embodiment will be described.

As shown in fig. 21, the substrate cleaning apparatus 1 of the present example includes an upper surface cleaning apparatus 210 in addition to upper holding apparatuses 10A and 10B, a lower holding apparatus 20, a base apparatus 30, a delivery apparatus 40, a lower surface cleaning apparatus 50, a shroud apparatus 60, an upper surface cleaning apparatus 70, an end cleaning apparatus 80, and an opening/closing apparatus 90.

The upper surface washing device 210 is provided adjacent to the end washing device 80 at a position lateral to the shroud 61 in the X direction. The upper surface rinsing device 210 includes a rotation support shaft 211, an arm 212, a rinsing nozzle 213, and a rinsing drive section 214.

The rotation support shaft 211 is supported by the flushing drive unit 214 so as to be vertically movable and rotatable on the bottom surface 2a so as to extend in the vertical direction. The arm 212 is provided above the upper holding device 10A so as to extend in the horizontal direction from the upper end portion of the rotation support shaft 211. A rinse nozzle 213 is attached to the distal end of the arm 212.

The rinse liquid supply unit 215 (fig. 22) is connected to the rinse nozzle 213. The rinse liquid supply unit 215 supplies rinse liquid to the rinse nozzle 213. In this example, pure water is used as the cleaning liquid supplied to the rinse nozzle 213. The rinse nozzle 213 ejects the rinse liquid supplied from the rinse liquid supply unit 215 onto the upper surface of the substrate W during or after the cleaning of the upper surface of the substrate W by the spray nozzle 73 and before the drying of the substrate W.

The flushing drive unit 214 includes one or a plurality of pulse motors, air cylinders, and the like, and lifts and lowers the rotation support shaft 211 and rotates the rotation support shaft 211. According to the above configuration, as shown by the thick dotted arrow in fig. 21, the rinse liquid can be supplied to the entire upper surface of the substrate W by moving the rinse nozzle 213 in an arc shape over the upper surface of the substrate W sucked and held and rotated by the suction holding portion 21.

In addition, as described above, even when the substrate cleaning apparatus 1 further includes a backwash nozzle, the rinse liquid can be supplied to the lower surface of the substrate W suctioned and held and rotated by the suction holding portion 21. As described above, according to the substrate cleaning apparatus 1 of fig. 21, the upper and lower surfaces of the substrate W after or during cleaning can be rinsed.

As shown in fig. 22, the control device 170 of the present example includes a flushing control unit 9J in addition to the various control units described in fig. 5 as functional units. The function of the rinse control unit 9J is realized by the CPU executing the substrate cleaning program stored in the storage device on the RAM, as in the other control units. Part or all of the flushing control unit 9J may be realized by hardware such as an electronic circuit. The rinse control unit 9J controls the rinse drive unit 214 and the rinse liquid supply unit 215 to perform a rinse process on the upper surface of the substrate W suctioned and held by the suction holding unit 21.

In the substrate cleaning apparatus 1 of fig. 21, a series of processes shown in fig. 6 to 20 is performed on one substrate W, substantially similar to the substrate cleaning apparatus 1 of the above-described embodiment. Here, in the series of processes, the rinse control unit 9J in fig. 22 may control the rinse drive unit 214 and the rinse liquid supply unit 215 as follows.

Fig. 23 is a side view for explaining a control example of the rinse driving unit 214 and the rinse liquid supply unit 215 by the rinse control unit 9J in fig. 22. Fig. 23 is a side view of the lower holding device 20 and the peripheral portion thereof, which is a side view of the substrate cleaning apparatus 1 of fig. 21 viewed along the Y direction, and corresponds to a C-C line side view of fig. 21. Further, the timing of the operation state of the substrate cleaning apparatus 1 shown in the side view of fig. 23 corresponds to the timing of the operation state of fig. 15 of the substrate cleaning apparatus 1 of the embodiment.

As shown in fig. 23, in this example, the 2 nd nozzle preparation operation is performed so as to overlap at least a part of the substrate lowering operation period of the transfer device 40. The 2 nd nozzle preparation operation is an operation of moving the rinse nozzle 213 from the rinse nozzle standby position on the side of the shroud 61 toward the rinse nozzle processing position above the substrate W.

At the start of the 2 nd nozzle preparation operation, the rinse nozzle 213 is held at a height position above the substrate W, the upper holding devices 10A and 10B, and the shield 61. After the start of the 2 nd nozzle preparation operation, the rotation support shaft 211 of the upper surface flushing device 210 rotates. Thereby, as shown by a thick solid arrow a29 in fig. 23, the rinse nozzle 213 is moved from the rinse nozzle standby position to a position above the substrate W. Then, the rotation support shaft 211 descends by a prescribed distance. Thereby, the tip of the rinse nozzle 213 is lowered to a height position above the upper surface of the substrate W by about several cm, and the rinse nozzle 213 reaches the rinse nozzle processing position. Thereafter, a rinse solution is supplied from the rinse nozzle 213 at the rinse nozzle processing position to the upper surface of the substrate W.

In this example, the transfer control unit 9D and the rinse control unit 9J in fig. 22 start respective operations so that at least a part of the substrate lowering operation period and the 2 nd nozzle preparation operation period overlap each other. Thus, compared with the case where the respective operations are performed so that the substrate lowering operation period and the 2 nd nozzle preparation operation period do not overlap, the period required for processing one substrate W is shortened by the amount of overlapping period of the periods. Thereby, the throughput of the substrate processing is improved. In the substrate cleaning apparatus 1 of fig. 21, the lower surface cleaning apparatus 50 may not be provided, the upper surface cleaning apparatus 70 may not be provided, and the end cleaning apparatus 80 may not be provided.

In this example, the shield raising operation (arrow a15 in fig. 23), the 2 nd brush preparation operation, the 1 st nozzle preparation operation (arrow a17 in fig. 23), and the 3 rd brush preparation operation (arrow a19 in fig. 23) are performed so as to overlap at least a part of the substrate lowering operation period of the transfer device 40. However, these operations (the shield raising operation, the 2 nd brush preparation operation, the 1 st nozzle preparation operation, and the 3 rd brush preparation operation) may be performed so as not to overlap with the substrate lowering operation period of the transfer device 40.

(C) In the above embodiment, the predetermined area (initial contact area) where the lower surface brush 51 should first contact the lower surface of the substrate W is set in the central area of the lower surface of the substrate W with respect to the substrate W held by the upper holding devices 10A and 10B, but the present invention is not limited thereto. The initial contact area may also be set at a position offset from the lower surface center area by a prescribed distance in the Y direction. In this case, when cleaning the central region of the lower surface of the substrate W, after the lower surface brush 51 comes into contact with the initial contact region, the movable base 32 moves so that the lower surface brush 51 moves from the initial contact region to the central region of the lower surface on the lower surface.

(D) In the substrate cleaning apparatus 1 of the above embodiment, the upper holding devices 10A and 10B are configured to hold the peripheral end portions of the substrate W, but the present invention is not limited thereto. For example, the upper holding devices 10A and 10B may each include a plurality of suction pads instead of the lower chucks 11A and 11B and the upper chucks 12A and 12B, and may be configured to be capable of sucking and holding a part of the lower surface of the substrate W. In this case, the upper holding devices 10A and 10B suction-hold the outer region of the lower surface of the substrate W, which is the peripheral edge portion of the substrate W. Thus, the central region of the lower surface of the substrate W can be cleaned while the substrate W is held by the upper holding devices 10A and 10B.

(E) In the substrate cleaning apparatus 1 of the above embodiment, the up-and-down movement operation of the plurality of support pins 41 is performed by the transfer device 40 in order to transfer the substrate W from the upper holding devices 10A, 10B to the lower holding device 20, but the present invention is not limited thereto.

The substrate cleaning apparatus 1 may be provided with a lift drive unit for lifting and lowering the lower holding device 20 relative to the upper holding devices 10A and 10B. Alternatively, a lifting drive unit may be provided to lift the upper holding devices 10A and 10B relative to the lower holding device 20. In these cases, at least one of the lower holding device 20 and the upper holding devices 10A and 10B is lifted and lowered relative to the other, so that the substrates W can be transferred between the 2 holding devices without using the plurality of support pins 41. In this case, the transfer device 40 is not required, and the lifting drive portion of the lower holding device 20 or the lifting drive portions of the upper holding devices 10A and 10B function as constituent elements for performing the substrate lowering operation.

(F) In the substrate cleaning apparatus 1 of the above embodiment, the horizontal movement operation of the movable base 32 is performed by the base apparatus 30 in order to transfer the substrate W from the upper holding apparatuses 10A, 10B to the lower holding apparatus 20, but the present invention is not limited thereto.

The substrate cleaning apparatus 1 may be provided with a movement driving unit for moving the upper holding devices 10A and 10B relative to the lower holding device 20 in the Y direction. In this case, by moving the upper holding devices 10A and 10B relative to the lower holding device 20 in the Y direction, the substrates W can be transferred between the 2 holding devices without moving the lower holding device 20 in the horizontal direction.

(G) As in the above embodiment, in the case where the substrate cleaning liquid is the same as the cleaning liquid, 2 substrate nozzles 52 may not be provided. In this case, the cleaning liquid discharged from the brush nozzles 52a and 52b to the lower surface brush 51 can be used as the cleaning liquid for cleaning the substrate when cleaning the central region of the lower surface of the substrate W and when cleaning the outer region of the lower surface of the substrate W.

(H) In the substrate cleaning apparatus 1 of the above embodiment, the cleaning liquid is supplied from the 2 substrate nozzles 52 to the substrate W in the process of cleaning the lower surface central region of the substrate W by the lower surface brush 51, but the present invention is not limited to this.

In the substrate cleaning apparatus 1, the lower surface brush 51 may be cleaned in advance before the lower surface of the substrate W is cleaned by the lower surface brush 51, so that the cleaning liquid may be immersed in the lower surface brush 51. In this case, by bringing the lower surface brush 51 immersed in the cleaning liquid into contact with the lower surface of the substrate W, the lower surface of the substrate W can be cleaned in a state where the lower surface brush 51 is in contact with the substrate W, without supplying a new cleaning liquid.

(I) The substrate cleaning apparatus 1 of the above embodiment may be provided with at least 1 apparatus out of the lower surface cleaning apparatus 50, the upper surface cleaning apparatus 70, and the end cleaning apparatus 80, and may not be provided with an apparatus other than at least 1 apparatus. Further, the substrate cleaning apparatus 1 of the embodiment may have constituent elements for performing a process other than the cleaning process on the substrates W held by the upper holding devices 10A and 10B.

6. Correspondence between each constituent element of the embodiment and each part of the embodiment

Hereinafter, examples of the correspondence between each constituent element of the present invention and each element of the embodiment will be described, but the present invention is not limited to the following examples. As each constituent element of the present invention, other various elements having the constitution or function described in the present invention may be used.

In the above embodiment, the substrate cleaning apparatus 1 is an example of a substrate processing apparatus, the height position of the substrate W held by the upper holding devices 10A and 10B is an example of the 1 st height position, the upper holding devices 10A and 10B are examples of the 1 st substrate holding portion, the height position of the substrate W held by the lower holding device 20 is an example of the 2 nd height position, and the lower holding device 20 is an example of the 2 nd substrate holding portion.

The cleaning process of the lower surface center region of the substrate W by the lower surface brush 51 is an example of the 1 st process, the cleaning process of the upper surface of the substrate W, the cleaning process of the outer peripheral end portion of the substrate W, the cleaning process of the lower surface outer region of the substrate W, and the rinsing process of the substrate W are examples of the 2 nd process, and the lower surface cleaning apparatus 50, the upper surface cleaning apparatus 70, the end cleaning apparatus 80, and the upper surface rinsing apparatus 210 are examples of the processing section.

The transfer device 40 is an example of a substrate moving section, the control device 170 is an example of a control section, the shield 61 is an example of a process shield, the shield driving section 62 is an example of a shield driving section, the lower surface brush 51 is an example of a lower surface brush, and the lifting support section 54 and the lower surface brush lifting driving section 55b are examples of lower surface brush moving sections.

The cleaning liquid and the rinse liquid are examples of the treatment liquid, the spray nozzle 73 and the rinse nozzle 213 are examples of the fluid nozzle, the rotation support shaft 71, the arm 72, the upper surface cleaning driving section 74, the rotation support shaft 211, the arm 212, and the rinse driving section 214 are examples of the nozzle moving section, the bevel brush 83 is an example of the end brush, and the rotation support shaft 81, the arm 82, and the bevel brush driving section 84 are examples of the end brush moving section.

7. Summary of the embodiments

The substrate processing apparatus according to item 1 (1) includes:

a 1 st substrate holding portion configured to be capable of holding a substrate at a 1 st height position;

A2 nd substrate holding unit configured to hold a substrate at a2 nd height position lower than the 1 st height position;

A processing unit configured to perform a1 st process on the substrate held by the 1 st substrate holding unit and a2 nd process on the substrate held by the 2 nd substrate holding unit;

A substrate moving unit configured to perform a substrate lowering operation for lowering a substrate from the 1 st height position to the 2 nd height position in order to transfer the substrate from the 1 st substrate holding unit to the 2 nd substrate holding unit; and

A control unit; and is also provided with

The 2 nd treatment includes a treatment using a treatment liquid;

The processing unit includes: a process shield formed so as to surround the 2 nd substrate holding portion in a plan view, and provided so as to be capable of being lifted and lowered between an upper shield position corresponding to the 2 nd height position and a lower shield position lower than the upper shield position; and

A shield driving unit for lifting and lowering the process shield;

The control unit controls the substrate moving unit and the shield driving unit to perform the substrate lowering operation of the substrate moving unit and the shield raising operation of raising the process shield from the lower shield position to the upper shield position so that at least a part of the shield raising operation overlaps with the substrate lowering operation.

In the substrate processing apparatus, the 1 st substrate is held at the 1 st height position by the 1 st substrate holding portion, and the 1 st process is performed. Next, the substrate is handed over from the 1 st substrate holding portion to the 2 nd substrate holding portion. At this time, the substrate is lowered from the 1 st height position to the 2 nd height position by the substrate lowering operation. The 2 nd substrate is held at the 2 nd height position by the 2 nd substrate holding portion, and the 2 nd process is performed.

In the 2 nd treatment, a treatment liquid was used. Thus, the process shield is disposed in the upper shield position. The treatment liquid used in the 2 nd treatment is caught by the treatment hood at the upper hood position. The processing shield is retracted to the lower shield position without receiving the processing liquid, so as to prevent interference with other components. Therefore, at the start of the 2 nd process, the process shield must be raised from the lower shield position to the upper shield position. According to the substrate processing apparatus, the substrate lowering operation period overlaps at least a part of the cover raising operation period. The period in which these periods overlap is referred to as an overlapping period.

Thus, compared with the case where the shield raising operation is started after the substrate is lowered to the 2 nd height position by the substrate lowering operation, the period required for processing one substrate is shortened by the amount of the overlapping period. In addition, the period required for processing one substrate is shortened by the amount of the overlapping period, compared with the case where the substrate lowering operation is started after the shield raising operation. Therefore, the throughput of the substrate processing increases.

The substrate processing apparatus according to item (2) 2 includes:

A control unit; and is also provided with

The processing unit includes:

A lower surface brush for cleaning the lower surface of the substrate by contacting the lower surface; and

A lower surface brush moving unit configured to move the lower surface brush between a lower surface brush processing position in contact with the lower surface of the substrate held by the 2 nd substrate holding unit and a lower surface brush standby position spaced apart from the lower surface brush processing position;

The 2 nd process includes a cleaning process of the lower surface of the substrate with the lower surface brush,

The control unit controls the substrate moving unit and the lower surface brush moving unit to perform the substrate lowering operation of the substrate moving unit and the lower surface brush preparation operation of moving the lower surface brush from the lower surface brush standby position to the lower surface brush processing position so that at least a part of the lower surface brush preparation operation overlaps with the substrate lowering operation.

The 2 nd process includes a cleaning process of the lower surface of the substrate with a lower surface brush. The lower surface brush is held at a lower surface brush standby position while the lower surface of the substrate is not cleaned. Therefore, at the start of the 2 nd process, the lower surface brush must be moved from the lower surface brush standby position to the lower surface brush process position. According to the substrate processing apparatus, at least a part of the substrate lowering operation period and the lower surface brush preparation operation period overlap. The period in which these periods overlap is referred to as an overlapping period.

Thus, the period required for processing one substrate is shortened by the amount of overlap period, compared with the case where the lower surface brush preparation operation is started after the substrate is lowered to the 2 nd height position by the substrate lowering operation. Therefore, the throughput of the substrate processing increases.

The substrate processing apparatus according to item (3) above includes:

A control unit; and is also provided with

The processing unit includes:

A fluid nozzle for ejecting a fluid containing a processing liquid toward the upper surface of the substrate; and

A nozzle moving unit configured to move the fluid nozzle between a nozzle processing position above the substrate held by the 2 nd substrate holding unit and a nozzle standby position laterally spaced apart from the substrate held by the 2 nd substrate holding unit;

the 2 nd process includes a cleaning process of the upper surface of the substrate with the fluid nozzle,

The control unit controls the substrate moving unit and the nozzle moving unit to perform the substrate lowering operation of the substrate moving unit and the nozzle preparation operation of moving the fluid nozzle from the nozzle standby position to the nozzle processing position so that at least a part of the nozzle preparation operation overlaps with the substrate lowering operation.

The 2 nd process includes a cleaning process of the upper surface of the substrate by a fluid nozzle. The fluid nozzle is held at the nozzle standby position while the upper surface of the substrate is not cleaned. Therefore, at the start of the 2 nd process, the fluid nozzle must be moved from the nozzle standby position to the nozzle process position. According to the substrate processing apparatus, at least a part of the substrate lowering operation period overlaps with at least a part of the nozzle preparation operation period. The period in which these periods overlap is referred to as an overlapping period.

Thus, compared with the case where the nozzle preparation operation is started after the substrate is lowered to the 2 nd height position by the substrate lowering operation, the period required for processing one substrate is shortened by the amount of the overlapping period. Therefore, the throughput of the substrate processing increases.

The substrate processing apparatus according to item 4 (4) includes:

A control unit; and is also provided with

The processing unit includes:

An end brush that cleans an outer peripheral end of a substrate by contacting the outer peripheral end; and

An end brush moving unit configured to move the end brush between an end brush processing position in contact with an outer peripheral end of the substrate held by the 2 nd substrate holding unit and an end brush standby position spaced apart from and laterally from the substrate held by the 2 nd substrate holding unit;

the 2 nd process includes a cleaning process of the outer peripheral end portion of the substrate with the end brush,

The control unit controls the substrate moving unit and the end brush moving unit to perform the substrate lowering operation of the substrate moving unit and the end brush preparation operation for moving the end brush from the end brush standby position to the end brush processing position so that at least a part of the substrate lowering operation overlaps with at least a part of the end brush preparation operation.

The 2 nd process includes a cleaning process performed on the outer peripheral end portion of the substrate by the end brush. The end brush is held at the end brush standby position while the peripheral end of the substrate is cleaned. Therefore, when the process 2 is started, the end brush must be moved from the end brush standby position to the end brush processing position. According to the substrate processing apparatus, the substrate lowering operation period overlaps at least a part of the end brush preparation operation period. The period in which these periods overlap is referred to as an overlapping period.

Thus, the period required for processing one substrate is shortened by the amount of overlap period, as compared with the case where the end brush preparation operation is started after the substrate is lowered to the 2 nd height position by the substrate lowering operation. Therefore, the throughput of the substrate processing increases.

(Item 5) in the substrate processing apparatus of item 1, it may be that

The processing unit includes:

a lower surface brush for cleaning the lower surface of the substrate by contacting the lower surface;

a fluid nozzle for ejecting a fluid containing a processing liquid toward the upper surface of the substrate;

A nozzle moving unit configured to move the fluid nozzle between a nozzle processing position above the substrate held by the 2 nd substrate holding unit and a nozzle standby position spaced apart from the substrate held by the 2 nd substrate holding unit;

An end brush moving unit configured to move the end brush between an end brush processing position in contact with an outer peripheral end of the substrate held by the 2 nd substrate holding unit and an end brush standby position spaced apart from the substrate held by the 2 nd substrate holding unit; and is also provided with

The 2 nd process includes a cleaning process of the lower surface of the substrate by the lower surface brush, a cleaning process of the upper surface of the substrate by the fluid nozzle, and a cleaning process of the outer peripheral end portion of the substrate by the end brush, as processes using the processing liquid,

The control unit controls the substrate moving unit, the shield driving unit, and the lower surface brush moving unit, the nozzle moving unit, and the end brush moving unit so that at least a part of the substrate lowering operation period, at least a part of the shield raising operation period, at least a part of the nozzle preparing operation period, and at least a part of the end brush preparing operation period overlap with each other for 3 or more periods, and performs the substrate lowering operation, the shield raising operation, the lower surface brush preparing operation for moving the lower surface brush from the lower surface brush standby position to the lower surface brush processing position, the nozzle preparing operation for moving the fluid nozzle from the nozzle standby position to the nozzle processing position, and the end brush preparing operation for moving the end brush from the end brush standby position to the end brush processing position.

In this case, the 2 nd process includes a cleaning process performed on the lower surface of the substrate by the lower surface brush, a cleaning process performed on the upper surface of the substrate by the fluid nozzle, and a cleaning process performed on the outer peripheral end portion of the substrate by the end brush.

The lower surface brush is held at a lower surface brush standby position while the lower surface of the substrate is not cleaned. Therefore, at the start of the 2 nd process, the lower surface brush must be moved from the lower surface brush standby position to the lower surface brush process position.

The fluid nozzle is held at the nozzle standby position while the upper surface of the substrate is not cleaned. Therefore, at the start of the 2 nd process, the fluid nozzle must be moved from the nozzle standby position to the nozzle process position.

The end brush is held at the end brush standby position while the peripheral end of the substrate is cleaned. Therefore, when the process 2 is started, the end brush must be moved from the end brush standby position to the end brush processing position.

According to the substrate processing apparatus, at least a part of the substrate lowering operation period, at least a part of the shield raising operation period, at least a part of the lower surface brush preparation operation period, at least a part of the nozzle preparation operation period, and at least 3 or more periods of the end brush preparation operation period overlap each other. The period in which these 3 or more periods overlap is referred to as an overlapping period.

Thus, compared with the case where the substrate lowering operation, the shield raising operation, the lower surface brush preparation operation, the nozzle preparation operation, and the end brush preparation operation are performed so that 3 or more of the periods do not overlap with each other, the period required for processing one substrate is shortened by the amount of overlapping period. Therefore, the throughput of the substrate processing increases.

The substrate processing method of item (6) 6 comprises the steps of:

processing 1 st the substrate held by the 1 st substrate holding section at the 1 st height position;

performing the 2 nd process on the substrate held by the 2 nd substrate holding portion using the processing liquid at the 2 nd height position lower than the 1 st height position;

A substrate lowering operation for lowering a substrate from the 1 st height position to the 2 nd height position in order to transfer the substrate from the 1 st substrate holding portion to the 2 nd substrate holding portion after the 1 st process and before the 2 nd process;

A process shield which is formed so as to surround the 2 nd substrate holding portion in a plan view and is provided so as to be capable of being lifted and lowered, and which is disposed at an upper shield position corresponding to the 2 nd height position so as to receive the process liquid used in the 2 nd process; and

Elevating the process shield between the upper shield position and a lower shield position below the upper shield position; and is also provided with

After the 1 st process and before the 2 nd process, the step of performing the substrate lowering operation and the step of raising and lowering the process shield are started so that the substrate lowering operation period overlaps at least a part of a shield raising operation period for raising the process shield from the lower shield position to the upper shield position.

In the substrate processing method, the 1 st substrate is held at the 1 st height position by the 1 st substrate holding portion, and the 1 st process is performed. Next, the substrate is handed over from the 1 st substrate holding portion to the 2 nd substrate holding portion. At this time, the substrate is lowered from the 1 st height position to the 2 nd height position by the substrate lowering operation. The 2 nd substrate is held at the 2 nd height position by the 2 nd substrate holding portion, and the 2 nd process is performed.

In the 2 nd treatment, a treatment liquid was used. Thus, the process shield is disposed in the upper shield position. The treatment liquid used in the 2 nd treatment is caught by the treatment hood at the upper hood position. The processing shield is retracted to the lower shield position without receiving the processing liquid, so as to prevent interference with other components. Therefore, at the start of the 2 nd process, the process shield must be raised from the lower shield position to the upper shield position. According to the substrate processing method, the substrate lowering operation period overlaps at least a part of the mask raising operation period. The period in which these periods overlap is referred to as an overlapping period.

The substrate processing method of item (7) 7 comprises the steps of:

Performing a2 nd process including cleaning a lower surface of the substrate by bringing a lower surface brush into contact with the lower surface of the substrate held by the 2 nd substrate holding portion at a2 nd height position lower than the 1 st height position;

A substrate lowering operation for lowering a substrate from the 1 st height position to the 2 nd height position in order to transfer the substrate from the 1 st substrate holding portion to the 2 nd substrate holding portion after the 1 st process and before the 2 nd process; and

Moving the lower surface brush between a lower surface brush processing position in contact with the lower surface of the substrate held by the 2 nd substrate holding section and a lower surface brush standby position spaced from the lower surface brush processing position; and is also provided with

After the 1 st process and before the 2 nd process, the step of performing the substrate lowering operation and the step of moving the lower surface brush are started so as to overlap at least a part of a lower surface brush preparation operation period in which the lower surface brush is moved from the lower surface brush standby position to the lower surface brush processing position during the substrate lowering operation.

The 2 nd process includes a cleaning process of the lower surface of the substrate with a lower surface brush. The lower surface brush is held at a lower surface brush standby position while the lower surface of the substrate is not cleaned. Therefore, at the start of the 2 nd process, the lower surface brush must be moved from the lower surface brush standby position to the lower surface brush process position. According to the substrate processing method, the substrate lowering operation period overlaps at least a part of the lower surface brush preparation operation period. The period in which these periods overlap is referred to as an overlapping period.

The substrate processing method of item (8) 8, comprising the steps of:

Performing a2 nd process including discharging a fluid containing a processing liquid from a fluid nozzle onto an upper surface of a substrate held by a2 nd substrate holding portion at a2 nd height position lower than the 1 st height position, and cleaning the upper surface of the substrate;

Moving the fluid nozzle between a nozzle processing position above the substrate held by the 2 nd substrate holding portion and a nozzle standby position spaced apart from and laterally of the substrate held by the 2 nd substrate holding portion; and is also provided with

After the 1 st process and before the 2 nd process, the step of performing the substrate lowering operation and the step of moving the fluid nozzle are started so as to overlap at least a part of a nozzle preparation operation period in which the fluid nozzle is moved from the nozzle standby position to the nozzle processing position during the substrate lowering operation.

The 2 nd process includes a cleaning process of the upper surface of the substrate by a fluid nozzle. The fluid nozzle is held at the nozzle standby position while the upper surface of the substrate is not cleaned. Therefore, at the start of the 2 nd process, the fluid nozzle must be moved from the nozzle standby position to the nozzle process position. According to the substrate processing method, at least a part of the substrate lowering operation period and the nozzle preparation operation period overlap. The period in which these periods overlap is referred to as an overlapping period.

The substrate processing method of item (9) 9, comprising the steps of:

performing a 2 nd process including cleaning an outer peripheral end portion of the substrate held by the 2 nd substrate holding portion by bringing the end brush into contact with the outer peripheral end portion of the substrate at a 2 nd height position lower than the 1 st height position;

Moving the end brush between an end brush processing position in contact with the outer peripheral end of the substrate held by the 2 nd substrate holding portion and an end brush standby position spaced apart from and laterally from the substrate held by the 2 nd substrate holding portion; and is also provided with

After the 1 st process and before the 2 nd process, the step of performing the substrate lowering operation and the step of moving the end brush are started so as to overlap at least a part of an end brush preparation operation period in which the end brush is moved from the end brush standby position to the end brush processing position during the substrate lowering operation.

The 2 nd process includes a cleaning process performed on the outer peripheral end portion of the substrate by the end brush. The end brush is held at the end brush standby position while the peripheral end of the substrate is cleaned. Therefore, when the process 2 is started, the end brush must be moved from the end brush standby position to the end brush processing position. According to the substrate processing method, the substrate lowering operation period overlaps at least a part of the end brush preparation operation period. The period in which these periods overlap is referred to as an overlapping period.

(Item 10) in the substrate processing method of item 6,

The 2 nd treatment using the treatment liquid may comprise:

A step of cleaning the lower surface of the substrate by bringing a lower surface brush into contact with the lower surface of the substrate held by the 2 nd substrate holding section at the 2 nd height position lower than the 1 st height position;

Ejecting a fluid containing a processing liquid from a fluid nozzle onto an upper surface of a substrate held at a2 nd height position below the 1 st height position by the 2 nd substrate holding portion, and cleaning the upper surface of the substrate; and

At the 2 nd height position lower than the 1 st height position, the end brush is brought into contact with an outer peripheral end of the substrate held by the 2 nd substrate holding portion to clean the outer peripheral end of the substrate; and is also provided with

The substrate processing method further comprises the steps of:

Moving the lower surface brush between a lower surface brush processing position in contact with the lower surface of the substrate held by the 2 nd substrate holding section and a lower surface brush standby position spaced from the lower surface brush processing position;

Moving the fluid nozzle between a nozzle processing position above the substrate held by the 2 nd substrate holding portion and a nozzle standby position spaced apart from and laterally of the substrate held by the 2 nd substrate holding portion; and

After the 1 st process and before the 2 nd process, the step of starting the substrate lowering operation, the step of catching the processing liquid, the step of moving the lower surface brush, the step of moving the fluid nozzle, and the step of moving the end brush are performed so that at least 3 or more periods of the period of the end brush preparation operation, in which at least part of the period of the substrate lowering operation, at least part of the period of the shield raising operation, at least part of the period of the lower surface brush preparation operation, at least part of the period of the nozzle preparation operation, and at least part of the period of the end brush preparation operation overlap each other.

According to the substrate processing method, at least a part of the substrate lowering operation period, at least a part of the shield raising operation period, at least a part of the lower surface brush preparation operation period, at least a part of the nozzle preparation operation period, and at least 3 or more periods of the end brush preparation operation period overlap each other. The period in which these 3 or more periods overlap is referred to as an overlapping period.

According to the substrate processing apparatus and the substrate processing method of the embodiment, the throughput of substrate processing is improved, and the processing efficiency of the substrate is improved, so that the energy saving of substrate processing can be realized. In addition, when a chemical solution is used for processing the substrate, the use of an excessive chemical solution can be reduced with an increase in yield, and thus the global environmental pollution can be reduced.

Claims

1. A substrate processing apparatus includes:

A 2 nd substrate holding unit configured to hold a substrate at a 2 nd height position lower than the first height position;

a processing unit configured to perform a1 st process on the substrate held by the first substrate holding unit and a2 nd process on the substrate held by the 2 nd substrate holding unit;

A control unit; and is also provided with

The 2 nd treatment includes a treatment using a treatment liquid;

A shield driving unit for lifting and lowering the process shield;

2. The substrate processing apparatus according to claim 1, wherein the processing section comprises:

3. A substrate processing apparatus includes:

a processing unit configured to perform a first process on the substrate held by the 1 st substrate holding unit and a2 nd process on the substrate held by the 2 nd substrate holding unit;

A control unit; and is also provided with

The processing unit includes:

4. A substrate processing apparatus includes:

A control unit; and is also provided with

The processing unit includes:

5. A substrate processing apparatus includes:

A control unit; and is also provided with

The processing unit includes:

6. A method of processing a substrate, comprising the steps of:

performing the 1 st process on the substrate held at the first height position by the 1 st substrate holding section;

Performing the 2 nd process on the substrate held by the 2 nd substrate holding portion at the 2 nd height position lower than the 1 st height position by using the processing liquid;

A substrate lowering operation for lowering a substrate from the first height position to the 2 nd height position in order to transfer the substrate from the 1 st substrate holding portion to the 2 nd substrate holding portion after the first process and before the 2 nd process;

7. The substrate processing method according to claim 6, wherein the 2 nd process using a process liquid comprises:

A step of bringing a lower surface brush into contact with a lower surface of a substrate held at the 2 nd height position below the first height position by the 2 nd substrate holding section to clean the lower surface of the substrate;

The end brush is brought into contact with an outer peripheral end portion of the substrate held at the 2 nd height position below the first height position by the 2 nd substrate holding portion, and the outer peripheral end portion of the substrate is cleaned;

The substrate processing method further comprises the steps of:

8. A method of processing a substrate, comprising the steps of:

Performing a first process on the substrate held at the first height position by the 1 st substrate holding section;

Performing a 2 nd process including bringing a lower surface brush into contact with a lower surface of a substrate held by a 2 nd substrate holding portion at a 2 nd height position lower than a1 st height position to clean the lower surface of the substrate;

a substrate lowering operation for lowering the substrate from the first height position to the 2 nd height position in order to transfer the substrate from the first substrate holding portion to the 2 nd substrate holding portion after the first process and before the 2 nd process; and

9. A method of processing a substrate, comprising the steps of:

1 st processing is performed on the substrate held at the 1 st height position by the 1 st substrate holding section;

Moving the fluid nozzle between a nozzle processing position above the substrate held by the 2 nd substrate holding portion and a nozzle standby position spaced apart from and laterally of the substrate held by the 2 nd substrate holding portion; order of (A)

10. A method of processing a substrate, comprising the steps of:

Performing a2 nd process including bringing an end brush into contact with an outer peripheral end of the substrate held by a2 nd substrate holding portion at a2 nd height position lower than the 1 st height position to clean the outer peripheral end of the substrate;

A substrate lowering operation for lowering a substrate from the 1 st height position to the 2 nd height position in order to transfer the substrate from the first substrate holding section to the 2 nd substrate holding section after the 1 st process and before the 2 nd process; and

After the first process and before the second process, the step of performing the substrate lowering operation and the step of moving the end brush are started so as to overlap at least a part of an end brush preparation operation period in which the end brush is moved from the end brush standby position to the end brush processing position during the substrate lowering operation.