CN118248545A - Method for forming STI structure - Google Patents

Method for forming STI structure Download PDF

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Publication number
CN118248545A
CN118248545A CN202410252606.8A CN202410252606A CN118248545A CN 118248545 A CN118248545 A CN 118248545A CN 202410252606 A CN202410252606 A CN 202410252606A CN 118248545 A CN118248545 A CN 118248545A
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CN
China
Prior art keywords
layer
etching
groove
hard mask
substrate
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Pending
Application number
CN202410252606.8A
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Chinese (zh)
Inventor
李勇
管玉东
杜闫
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Hua Hong Semiconductor Wuxi Co Ltd
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Hua Hong Semiconductor Wuxi Co Ltd
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Priority to CN202410252606.8A priority Critical patent/CN118248545A/en
Publication of CN118248545A publication Critical patent/CN118248545A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The application discloses a method for forming an STI structure, which comprises the following steps: providing a substrate, wherein a liner oxide layer is formed on the substrate, a hard mask layer is formed on the liner oxide layer, and a BARC layer is formed on the hard mask layer; etching through a photoetching process to form a first groove in the BARC layer, the hard mask layer and the liner oxide layer; removing the BARC layer; etching the first groove to a preset depth in the substrate to form a second groove; etching by using a reaction gas containing carbon tetrafluoride and oxygen, and removing reaction byproducts in the second groove; and filling an insulating layer in the second trench. According to the application, in the process of forming the STI structure, after the corresponding groove of the STI structure is formed, the reaction gas containing carbon tetrafluoride and oxygen is used for etching, and the reaction byproducts in the groove are removed, so that the problem of poor morphology of the STI structure due to the existence of the reaction byproducts is solved, and the reliability and yield of products are improved to a certain extent.

Description

Method for forming STI structure
Technical Field
The application relates to the technical field of semiconductor devices and integrated circuits, in particular to a method for forming an STI structure.
Background
In the semiconductor device and integrated circuit fabrication industry, it is often desirable to form shallow trench isolation (shallow trench isolation, STI) structures in the substrate to define the active areas (ACTIVE AREA, AA) of the device.
In the related art, the process of forming the STI structure includes: a Hard Mask (HM) layer is formed on the substrate, a bottom anti-REFLECTIVE COATING (BARC) coating is formed on the hard mask layer, etching is performed through a photolithography process, trenches are formed in the substrate, the hard mask layer and the BARC layer, and then an insulating layer is filled in the trenches to form the STI structure.
However, since the hard mask layer generally has a relatively large thickness and a relatively small line width, when forming the trench through the photolithography process, heavy reaction byproducts (polymers) are difficult to be immediately pumped away, resulting in uneven distribution of the reaction byproducts in the trench, thereby making the morphology of the device structure poor and affecting the reliability and yield of the product.
Disclosure of Invention
The application provides a method for forming an STI structure, which can solve the problem that the appearance of a device structure is poor due to reaction byproducts in the manufacturing method of the STI structure provided in the related technology, and comprises the following steps:
providing a substrate, wherein a liner oxide layer is formed on the substrate, a hard mask layer is formed on the liner oxide layer, and a BARC layer is formed on the hard mask layer;
etching through a photoetching process to form a first groove in the BARC layer, the hard mask layer and the liner oxide layer;
Removing the BARC layer;
Etching the first groove to a preset depth in the substrate to form a second groove;
Etching through a reaction gas containing carbon tetrafluoride and oxygen, and removing reaction byproducts in the second groove;
And filling an insulating layer in the second groove.
In some embodiments, the etching is performed by a reaction gas comprising carbon tetrafluoride and oxygen for a time of 5 seconds to 8 seconds.
In some embodiments, the flow rate of the reaction gas is 40SCCM to 50SCCM during the etching by the reaction gas comprising carbon tetrafluoride and oxygen.
In some embodiments, the etching by a photolithography process forms a first trench in the BARC layer, the hard mask layer, and the pad oxide layer, comprising:
Covering a photoresist on the BARC layer, and exposing a region corresponding to the first groove through exposure and development;
Etching to form a through hole in the BARC layer, wherein the hard mask layer at the bottom of the through hole is exposed;
and etching the through hole until the substrate is exposed, so as to form the first groove.
In some embodiments, the hard mask layer comprises a silicon nitride layer.
In some embodiments, the insulating layer comprises a silicon dioxide layer.
The technical scheme of the application at least comprises the following advantages:
In the process of forming the STI structure, after forming the trench corresponding to the STI structure, etching is performed through the reaction gas containing carbon tetrafluoride and oxygen, and the reaction byproducts in the trench are removed, so that the problem that the morphology of the STI structure is poor due to the existence of the reaction byproducts is solved, and the reliability and yield of products are improved to a certain extent.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present application, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
Fig. 1 is a flow chart of a method of forming an STI structure according to an exemplary embodiment of the present application;
Fig. 2 to 7 are schematic views illustrating the formation of STI structures according to an exemplary embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made more apparent and fully hereinafter with reference to the accompanying drawings, in which some, but not all embodiments of the application are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
In the description of the present application, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; the two components can be directly connected or indirectly connected through an intermediate medium, or can be communicated inside the two components, or can be connected wirelessly or in a wired way. The specific meaning of the above terms in the present application will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present application described below may be combined with each other as long as they do not collide with each other.
Referring to fig. 1, a flowchart of a method for forming an STI structure according to an exemplary embodiment of the present application is shown, and as shown in fig. 1, the method includes:
step S1, a substrate is provided, a liner oxide layer is formed on the substrate, a hard mask layer is formed on the liner oxide layer, and a BARC layer is formed on the hard mask layer.
And S2, etching through a photoetching process to form a first groove in the BARC layer, the hard mask layer and the liner oxide layer.
Wherein step S2 includes, but is not limited to: covering a photoresist on the BARC layer, exposing the region corresponding to the first trench through exposure and development; etching to form a through hole in the BARC layer, wherein the hard mask layer at the bottom of the through hole is exposed; and etching the through hole until the substrate is exposed, and forming a first groove.
Referring to fig. 2, a schematic cross-sectional view of a BRAC layer after being coated with photoresist and exposed to light for development is shown; referring to fig. 3, a schematic cross-sectional view is shown after forming a via; referring to fig. 4, a schematic cross-sectional view after forming the first trench is shown.
As illustrated in fig. 2 to 4, the BARC layer 140 may be covered with a photoresist 200, an area corresponding to the via 300 is exposed by exposure and shadow, the via 300 is formed in the BARC layer 140, the hard mask layer 130 at the bottom of the via 300 is exposed, and the via 300 is etched until the substrate 110 is exposed, thereby forming the first trench 301. A pad oxide layer (pad oxide layer) 120 is formed on the substrate 110, and a hard mask layer 130 is formed on the pad oxide layer 120, wherein the hard mask layer 130 includes a silicon nitride (Si 3N4) layer.
And S3, removing the BARC layer.
Referring to FIG. 5, a schematic cross-sectional view after formation of a BARC layer is shown. Illustratively, as shown in FIG. 5, the photoresist 200 and the BARC layer 140 may be removed by a plasma or a solvent.
And S4, etching the first groove to a preset depth in the substrate to form a second groove.
Referring to fig. 6, a schematic cross-sectional view after forming the second trench is shown. Illustratively, as shown in fig. 6, an etch may be performed to a predetermined depth in the substrate 110 below the first trench 301, forming a second trench 302.
And S5, etching by using a reaction gas containing carbon tetrafluoride and oxygen, and removing reaction byproducts in the second groove.
In step S5, the etching time by the reaction gas containing carbon tetrafluoride (CF 4) and oxygen (O 2) is 5 seconds (S) to 8 seconds, and the flow rate of the reaction gas is 40 standard cubic centimeters per minute (SCCM) to 50SCCM during the etching by the reaction gas containing carbon tetrafluoride and oxygen.
And S6, filling an insulating layer in the second groove.
Referring to fig. 7, a schematic cross-sectional view is shown after filling the second trench with an insulating layer. Illustratively, as shown in fig. 7, the insulating layer 150 may be formed by depositing a silicon dioxide (SiO 2) layer by chemical vapor deposition (chemical vapor deposition, CVD) to fill the second trench 302.
In summary, in the embodiment of the application, after the trench corresponding to the STI structure is formed in the process of forming the STI structure, the reaction gas containing carbon tetrafluoride and oxygen is used for etching, and the reaction byproducts in the trench are removed, so that the problem that the morphology of the STI structure is poor due to the existence of the reaction byproducts is solved, and the reliability and yield of the product are improved to a certain extent.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the application.

Claims (6)

1. A method for forming an STI structure, comprising:
providing a substrate, wherein a liner oxide layer is formed on the substrate, a hard mask layer is formed on the liner oxide layer, and a BARC layer is formed on the hard mask layer;
etching through a photoetching process to form a first groove in the BARC layer, the hard mask layer and the liner oxide layer;
Removing the BARC layer;
Etching the first groove to a preset depth in the substrate to form a second groove;
Etching through a reaction gas containing carbon tetrafluoride and oxygen, and removing reaction byproducts in the second groove;
And filling an insulating layer in the second groove.
2. The method of claim 1, wherein the etching is performed by a reaction gas comprising carbon tetrafluoride and oxygen for a time of 5 seconds to 8 seconds.
3. The method according to claim 2, wherein the flow rate of the reaction gas is 40SCCM to 50SCCM during the etching by the reaction gas containing carbon tetrafluoride and oxygen.
4. The method of any of claims 1 to 3, wherein the etching by a photolithography process forms a first trench in the BARC layer, the hard mask layer, and the liner oxide layer, comprising:
Covering a photoresist on the BARC layer, and exposing a region corresponding to the first groove through exposure and development;
Etching to form a through hole in the BARC layer, wherein the hard mask layer at the bottom of the through hole is exposed;
and etching the through hole until the substrate is exposed, so as to form the first groove.
5. The method of claim 4, wherein the hard mask layer comprises a silicon nitride layer.
6. The method of claim 5, wherein the insulating layer comprises a silicon dioxide layer.
CN202410252606.8A 2024-03-05 2024-03-05 Method for forming STI structure Pending CN118248545A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202410252606.8A CN118248545A (en) 2024-03-05 2024-03-05 Method for forming STI structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202410252606.8A CN118248545A (en) 2024-03-05 2024-03-05 Method for forming STI structure

Publications (1)

Publication Number Publication Date
CN118248545A true CN118248545A (en) 2024-06-25

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Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
CN (1) CN118248545A (en)

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