CN118248516A - Plasma generating mechanism of semiconductor etching equipment - Google Patents
Plasma generating mechanism of semiconductor etching equipment Download PDFInfo
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- CN118248516A CN118248516A CN202410260639.7A CN202410260639A CN118248516A CN 118248516 A CN118248516 A CN 118248516A CN 202410260639 A CN202410260639 A CN 202410260639A CN 118248516 A CN118248516 A CN 118248516A
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- reaction
- radio frequency
- shielding
- mounting plate
- respectively arranged
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- 238000005530 etching Methods 0.000 title claims abstract description 29
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 230000007246 mechanism Effects 0.000 title claims abstract description 16
- 238000006243 chemical reaction Methods 0.000 claims abstract description 75
- 239000012495 reaction gas Substances 0.000 claims abstract description 33
- 239000007789 gas Substances 0.000 claims abstract description 19
- 230000005611 electricity Effects 0.000 claims abstract description 12
- 230000003068 static effect Effects 0.000 claims abstract description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 34
- 229910052782 aluminium Inorganic materials 0.000 claims description 34
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 23
- 239000010949 copper Substances 0.000 claims description 23
- 229910052802 copper Inorganic materials 0.000 claims description 23
- 239000007921 spray Substances 0.000 claims description 18
- 230000000712 assembly Effects 0.000 claims description 12
- 238000000429 assembly Methods 0.000 claims description 12
- 239000000919 ceramic Substances 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 3
- 238000009423 ventilation Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 3
- 230000000149 penetrating effect Effects 0.000 abstract description 2
- 229910010293 ceramic material Inorganic materials 0.000 abstract 1
- 230000005684 electric field Effects 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- Drying Of Semiconductors (AREA)
Abstract
The invention relates to a plasma generating mechanism of semiconductor etching equipment, which comprises a mounting plate, two through holes which are arranged on the mounting plate and are communicated with external vacuum etching equipment, two reaction cavities which are respectively arranged on the top surface of the mounting plate and are used for covering the two through holes and are in a tower shape, shielding components which are respectively arranged at the outer walls of the two reaction cavities and are used for shielding external electromagnetism and taking away static electricity, two groups of radio frequency components which are respectively arranged at the outer walls of the two groups of shielding components in a spiral manner and are used for generating radio frequency magnetic fields, and reaction gas feeding components which are respectively arranged at the middle parts of the top surfaces of the two reaction cavities and are used for penetrating through the air outlet ends into the reaction cavities and driving working gas into the reaction cavities to react with the radio frequency magnetic fields; the two reaction chambers are made of 95 alumina ceramic materials; according to the invention, by changing the material and the shape of the reaction cavity, the strength of the reaction cavity is enhanced, the volume of the reaction cavity is reduced, and the volume of the equipment is effectively reduced.
Description
Technical Field
The invention relates to the field of semiconductor etching, in particular to a plasma generating mechanism of semiconductor etching equipment.
Background
Etching is a very important one-step process in the fields of semiconductor processing, microelectronic fabrication, LED production, etc., and the rapid development of microelectronics has driven its continued development. Common etching means mainly include dry etching and wet etching. Plasma etching is a form of dry etching that is currently common, when a gas is exposed to an electron region, ionized gas and gas with high energy electrons are generated, forming a plasma, and the ionized gas will release a large amount of energy to etch a surface through an accelerating electric field. Compared with other etching technologies, the plasma etching technology has the advantages of simple structure, convenient operation and high cost performance.
The existing equipment reaction mechanism mostly adopts quartz materials to manufacture reaction chambers, the shape is mostly cylindrical, the overall dimension is large, the equipment volume is not advantageous, as in the prior art 201110287142.7, a plasma etching treatment device and a method thereof and a semiconductor element manufacturing method are disclosed.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a plasma generating mechanism of semiconductor etching equipment.
In order to achieve the above purpose, the invention adopts the following technical scheme: the utility model provides a semiconductor etching equipment plasma generating mechanism, which comprises a mounting plate, two through holes which are arranged on the mounting plate and are communicated with external vacuum etching equipment, two reaction chambers which are respectively arranged on the top surface of the mounting plate and are used for covering the two through holes and are in a tower shape, shielding components which are respectively arranged at the outer walls of the two reaction chambers and are used for shielding external electromagnetism and taking away static electricity, two groups of radio frequency components which are respectively arranged at the outer walls of the two groups of shielding components in a spiral way and are used for generating radio frequency magnetic fields, and reaction gas feeding components which are respectively arranged at the middle parts of the top surfaces of the two reaction chambers and are respectively arranged at the air outlet ends to penetrate into the reaction chambers and are used for driving working gas into the reaction chambers to react with the radio frequency magnetic fields; the two reaction chambers are made of 95 alumina ceramic.
Preferably, the two groups of radio frequency assemblies each comprise a plurality of radio frequency coil frames which are arranged at intervals along the circumferential direction of the reaction cavity, a plurality of coil clamping grooves which are respectively arranged on the outer wall of one side of the plurality of radio frequency coil frames from top to bottom, radio frequency coils which are spirally wound on the outer wall of the shielding assembly and are clamped in the corresponding coil clamping grooves in each circle, and a clamping groove cover plate which is arranged on the plurality of radio frequency coil frames and used for covering the plurality of coil clamping grooves; the radio frequency coil is connected with an external radio frequency regulator in a terminating mode, and the lower end of the radio frequency coil is grounded.
Preferably, the two groups of reaction gas feeding assemblies comprise an air outlet spray header which is arranged in the middle of the top surface of the reaction cavity and the outlet end of which penetrates into the reaction cavity, and a reaction gas feeding pipeline, one end of which is connected with external air supply equipment and the other end of which is connected with the air outlet spray header; the reaction gas feeding pipeline and the gas outlet spray header are connected with each other through a flange plate; grooves convenient for ventilation are formed in the middle parts of the two flange plates; a plurality of air inlets communicated with the air outlet end of the air outlet spray header are arranged in the flange groove of the air outlet spray header.
Preferably, sealing rubber rings are arranged between the two reaction chambers and the mounting plate and between the flange plate of the air shower head and the flange plate of the reaction gas feeding pipeline.
Preferably, the shielding component comprises an aluminum Faraday shielding shell arranged on the mounting plate and sleeved on the outer wall of the reaction cavity, and a grounding copper sheet connected to one side of the top of the aluminum Faraday shielding shell and used for guiding static electricity away; the fixing blocks are tightly attached to the outer walls of the aluminum Faraday shielding shells; and one ends of the radio frequency coil frames are connected to one side of the top of the aluminum Faraday shielding case, and the other ends of the radio frequency coil frames are fixed on the mounting plate to epitaxially compress the aluminum Faraday shielding case and the bottom of the reaction cavity.
Preferably, the shielding component comprises a plurality of shielding copper sheets which are sintered and fixed with the reaction cavity through a ceramic copper coating process to form a whole and are arranged at intervals along the circumferential direction of the reaction cavity, a round grounding aluminum plate which is arranged on the reaction gas feeding component and is positioned at the middle part of the top surface of the reaction cavity, a plurality of contact rods which are arranged at the outer ring of the surface of the grounding aluminum plate, which is opposite to the reaction cavity, and are used for contacting with the shielding copper sheets, and a grounding copper sheet which is connected at one side of the top surface of the grounding aluminum plate and is used for leading static electricity away; the grounding aluminum plate is connected to the flange plate of the reaction gas feeding pipeline; and one ends of the radio frequency coil frames are connected between the grounding aluminum plate and the flange plate of the reaction gas feeding pipeline, and the other ends of the radio frequency coil frames are fixed on the mounting plate to epitaxially compress the bottom of the reaction cavity.
Due to the application of the technical scheme, compared with the prior art, the invention has the following advantages:
According to the invention, by changing the material and shape of the reaction cavity, the strength of the reaction cavity is enhanced, the volume of the reaction cavity is reduced, the volume of the equipment is effectively reduced, the reaction cavity of the ceramic copper-clad process is reduced, the ineffective distance between the coil and the ceramic cavity is reduced, the conditions required by the reaction are reduced, and the running cost of the equipment is reduced.
Drawings
The technical scheme of the invention is further described below with reference to the accompanying drawings:
FIG. 1 is a schematic view showing the overall structure of a plasma generating mechanism of a semiconductor etching apparatus according to the present invention;
Fig. 2 is a schematic cross-sectional view of a plasma generating mechanism of a semiconductor etching apparatus according to the present invention.
Wherein: 1. a mounting plate; 2. a through hole; 3. a reaction chamber; 4. a shielding assembly; 41a, aluminium faraday shield casing; 42a, a grounding copper sheet; 41b, shielding copper sheets; 42b, a grounding aluminum plate; 43b, grounding copper sheet; 44b, contact lever; 5. a radio frequency assembly; 51. a radio frequency coil former; 52. a coil clamping groove; 53. a clamping groove cover plate; 54. a radio frequency coil; 6. a reactant gas feed assembly; 61. an air outlet spray header; 62. a reactant gas feed line; 63. flange, 64, groove; 65. an air inlet hole; 7. sealing the rubber ring.
Detailed Description
The invention will be described in further detail with reference to the accompanying drawings and specific examples.
Fig. 1-2 are diagrams showing a plasma generating mechanism of a semiconductor etching device according to the present invention, comprising a mounting plate 1, two through holes 2 arranged on the mounting plate 1 and communicated with an external vacuum etching device, two reaction chambers 3 respectively arranged on the top surface of the mounting plate 1 and used for covering the two through holes 2 and having a tower shape, shielding components 4 respectively arranged at the outer walls of the two reaction chambers 3 and used for shielding external electromagnetic and taking away static electricity, two groups of radio frequency components 5 respectively spirally arranged at the outer walls of the two groups of shielding components 4 and used for generating radio frequency magnetic fields, and reaction gas feeding components 6 respectively arranged in the middle parts of the top surfaces of the two reaction chambers 3 and penetrating the air outlet ends into the reaction chambers 3 and used for driving working gas into the reaction chambers 3 and reacting with the radio frequency magnetic fields; the two reaction chambers 3 are made of 95 alumina ceramic; the two sets of radio frequency assemblies 5 each comprise a plurality of radio frequency coil frames 51 which are arranged at intervals along the circumferential direction of the reaction cavity 3, a plurality of coil clamping grooves 52 which are respectively arranged on the outer wall of one side of the plurality of radio frequency coil frames 51 from top to bottom, radio frequency coils 54 which are spirally wound at the outer wall of the shielding assembly 4 and are clamped in the corresponding coil clamping grooves 52 in each circle, and a clamping groove cover plate 53 which is arranged on the plurality of radio frequency coil frames 51 and used for covering the plurality of coil clamping grooves 52; the upper end of the radio frequency coil 54 is connected with an external radio frequency regulator, and the lower end of the radio frequency coil is grounded; the two groups of reaction gas feeding assemblies 6 comprise an air outlet spray header 61 which is arranged in the middle of the top surface of the reaction cavity 3 and the outlet end of which penetrates into the reaction cavity, and a reaction gas feeding pipeline 62, one end of which is connected with external gas supply equipment and the other end of which is connected with the air outlet spray header 61; the reaction gas feeding pipeline 62 and the gas outlet spray header 61 are connected with each other through a flange 63; grooves 64 which are convenient to ventilate are formed in the middle of the two flange plates 63; a plurality of air inlet holes 65 communicated with the air outlet end of the air outlet spray header 61 are arranged in the grooves 64 of the flange 63 of the air outlet spray header 61.
Further, sealing rubber rings 7 are respectively arranged between the two reaction chambers 3 and the mounting plate 1 and between the flange 63 of the air shower head and the flange 63 of the reaction gas feeding pipeline 62, so that the tightness is enhanced.
In the first embodiment, the shielding assembly 4 includes an aluminum faraday shielding shell 41a disposed on the mounting plate 1 and sleeved on the outer wall of the reaction chamber 3, and a grounding copper sheet 42a connected to one side of the top of the aluminum faraday shielding shell 41a for guiding static electricity away; the plurality of fixing blocks are closely attached to the outer wall of the aluminum Faraday shielding case 41 a; one end of each of the plurality of radio frequency coil frames 51 is connected to one side of the top of the aluminum faraday shield shell 41a, the other end of each of the plurality of radio frequency coil frames is fixed on the mounting plate 1 to compress the aluminum faraday shield shell 41a and the bottom of the reaction chamber 3 in an epitaxial manner, when etching is needed, an external radio frequency regulator is started to generate a radio frequency electric field, a radio frequency magnetic field is generated by the radio frequency coil 54 under the action of the radio frequency electric field, then an external air supply device is started to drive reaction gas into the reaction chamber 3 through the reaction gas feeding pipeline 62 and the air outlet spray header 61, then the reaction gas is ionized and has activity under the action of the radio frequency magnetic field, then plasma is led into the surface of a silicon wafer to be processed in the external vacuum etching device to react, residual gas after reaction is pumped away by a vacuum pump of the vacuum etching device, at this time, the aluminum faraday shield shell 41a shields external electromagnetic shielding to avoid ionization reaction of the reaction gas, and static electricity on the aluminum faraday shield shell 41a is led away through the grounding copper sheet 42 a.
In the second embodiment, the shielding component 4 includes a plurality of shielding copper sheets 41b integrally disposed at intervals along the circumferential direction of the reaction chamber 3 and sintered and fixed with the reaction chamber 3 by a ceramic copper coating process, a circular grounding aluminum plate 42b disposed on the reaction gas feeding component 6 and located at the middle of the top surface of the reaction chamber 3, a plurality of contact rods 44b disposed at an outer ring of a surface of the grounding aluminum plate 42b opposite to the reaction chamber 3 and used for contacting with the plurality of shielding copper sheets 41b, and a grounding copper sheet 43b connected to one side of the top surface of the grounding aluminum plate 42b and used for guiding static electricity away; the grounding aluminum plate 42b is connected to the flange 63 of the reaction gas feed line 62; one end of each of the plurality of radio frequency coil frames 51 is connected between the grounding aluminum plate 42b and the flange 63 of the reaction gas feeding pipeline 62, the other end of each of the plurality of radio frequency coil frames is fixed on the mounting plate 1 to compress the bottom of the reaction chamber 3 in an epitaxial manner, when etching is needed, an external radio frequency regulator is started to generate a radio frequency electric field, the radio frequency coil 54 generates a radio frequency magnetic field under the action of the radio frequency electric field, then an external gas supply device is started to drive reaction gas into the reaction chamber 3 through the reaction gas feeding pipeline 62 and the gas outlet spray header 61, then the reaction gas is subjected to ionization reaction under the action of the radio frequency magnetic field to have activity, then plasma is led into the external vacuum etching device to react with the surface of a silicon wafer to be processed, the residual gas after reaction is pumped by the vacuum etching device, at the moment, the 24 shielding copper sheets 41b embedded on the outer surface of the reaction chamber 3 prevent the ionization reaction of the reaction gas from being interfered by the external electromagnetic shielding copper sheets 43b, and static electricity on the shielding copper sheets 41b is led away through the grounding copper sheets 42 b.
The foregoing is merely a specific application example of the present invention, and the protection scope of the present invention is not limited in any way. All technical schemes formed by equivalent transformation or equivalent substitution fall within the protection scope of the invention.
Claims (6)
1. A plasma generating mechanism of a semiconductor etching apparatus, characterized in that: the device comprises a mounting plate, two through holes which are arranged on the mounting plate and are communicated with external vacuum etching equipment, two tower-shaped reaction chambers which are respectively arranged on the top surface of the mounting plate and are used for covering the two through holes, shielding assemblies which are respectively arranged at the outer walls of the two reaction chambers and are used for shielding external electromagnetism and taking static electricity away, two groups of radio frequency assemblies which are respectively arranged at the outer walls of the two groups of shielding assemblies in a spiral manner and are used for generating radio frequency magnetic fields, and reaction gas feeding assemblies which are respectively arranged in the middle parts of the top surfaces of the two reaction chambers and are used for driving working gas into the reaction chambers and reacting with the radio frequency magnetic fields through gas outlet ends; the two reaction chambers are made of 95 alumina ceramic.
2. The semiconductor etching apparatus plasma generating mechanism according to claim 1, wherein: the two groups of radio frequency assemblies comprise a plurality of radio frequency coil frames which are arranged at intervals along the circumferential direction of the reaction cavity, a plurality of coil clamping grooves which are respectively arranged on the outer wall of one outwards side of the plurality of radio frequency coil frames from top to bottom, radio frequency coils which are spirally wound on the outer wall of the shielding assembly and are clamped in the corresponding coil clamping grooves in each circle, and a clamping groove cover plate which is arranged on the plurality of radio frequency coil frames and used for covering the plurality of coil clamping grooves; the radio frequency coil is connected with an external radio frequency regulator in a terminating mode, and the lower end of the radio frequency coil is grounded.
3. The semiconductor etching apparatus plasma generating mechanism according to claim 1, wherein: the two groups of reaction gas feeding assemblies comprise an air outlet spray header which is arranged in the middle of the top surface of the reaction cavity and the outlet end of which penetrates into the reaction cavity, and a reaction gas feeding pipeline, one end of which is connected with external air supply equipment and the other end of which is connected with the air outlet spray header; the reaction gas feeding pipeline and the gas outlet spray header are connected with each other through a flange plate; grooves convenient for ventilation are formed in the middle parts of the two flange plates; a plurality of air inlets communicated with the air outlet end of the air outlet spray header are arranged in the flange groove of the air outlet spray header.
4. A semiconductor etching apparatus plasma generating mechanism according to claim 3, wherein: sealing rubber rings are arranged between the two reaction chambers and the mounting plate and between the flange plate of the air shower head and the flange plate of the reaction gas feeding pipeline.
5. The plasma generating mechanism for a semiconductor etching apparatus according to any one of claims 1 to 4, wherein: the two groups of shielding assemblies comprise aluminum Faraday shielding cases which are arranged on the mounting plate and sleeved on the outer wall of the reaction cavity, and grounding copper sheets which are connected to one side of the top of the aluminum Faraday shielding cases and used for guiding static electricity away; the fixing blocks are tightly attached to the outer walls of the aluminum Faraday shielding shells; and one ends of the radio frequency coil frames are connected to one side of the top of the aluminum Faraday shielding case, and the other ends of the radio frequency coil frames are fixed on the mounting plate to epitaxially compress the aluminum Faraday shielding case and the bottom of the reaction cavity.
6. The plasma generating mechanism for a semiconductor etching apparatus according to any one of claims 1 to 4, wherein: the two groups of shielding assemblies comprise a plurality of shielding copper sheets which are integrally arranged at intervals along the circumferential direction of the reaction chamber and are sintered and fixed with the reaction chamber through a ceramic copper coating process, a round grounding aluminum plate which is arranged on the reaction gas feeding assembly and is positioned in the middle of the top surface of the reaction chamber, a plurality of contact rods which are arranged on the outer ring of one surface of the grounding aluminum plate, which is opposite to the reaction chamber, and are used for contacting with the shielding copper sheets, and a grounding copper sheet which is connected to one side of the top surface of the grounding aluminum plate and is used for leading static electricity away; the grounding aluminum plate is connected to the flange plate of the reaction gas feeding pipeline; and one ends of the radio frequency coil frames are connected between the grounding aluminum plate and the flange plate of the reaction gas feeding pipeline, and the other ends of the radio frequency coil frames are fixed on the mounting plate to epitaxially compress the bottom of the reaction cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410260639.7A CN118248516A (en) | 2024-03-07 | 2024-03-07 | Plasma generating mechanism of semiconductor etching equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410260639.7A CN118248516A (en) | 2024-03-07 | 2024-03-07 | Plasma generating mechanism of semiconductor etching equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118248516A true CN118248516A (en) | 2024-06-25 |
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ID=91550223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410260639.7A Pending CN118248516A (en) | 2024-03-07 | 2024-03-07 | Plasma generating mechanism of semiconductor etching equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN118248516A (en) |
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2024
- 2024-03-07 CN CN202410260639.7A patent/CN118248516A/en active Pending
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