US20240014016A1 - Semiconductor processing apparatus for generating plasma - Google Patents
Semiconductor processing apparatus for generating plasma Download PDFInfo
- Publication number
- US20240014016A1 US20240014016A1 US18/472,267 US202318472267A US2024014016A1 US 20240014016 A1 US20240014016 A1 US 20240014016A1 US 202318472267 A US202318472267 A US 202318472267A US 2024014016 A1 US2024014016 A1 US 2024014016A1
- Authority
- US
- United States
- Prior art keywords
- conductive
- shield
- slices
- conductive slices
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 64
- 125000006850 spacer group Chemical group 0.000 claims abstract description 68
- 238000005530 etching Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 9
- 238000004804 winding Methods 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 210000002381 plasma Anatomy 0.000 description 19
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 12
- 239000007789 gas Substances 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910000976 Electrical steel Inorganic materials 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 229910052742 iron Inorganic materials 0.000 description 6
- 229910001092 metal group alloy Inorganic materials 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 239000012212 insulator Substances 0.000 description 5
- 239000012777 electrically insulating material Substances 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000001746 injection moulding Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000005060 rubber Substances 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0007—Casings
- H05K9/0049—Casings being metallic containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Definitions
- Plasma technology is widely used in semiconductor manufacturing processes.
- plasma etching is one etching technique that is commonly used for selective processing, forming fine-pitched pattern, photoresist stripping, or the like.
- a radio frequency (RF) coil may be utilized in the plasma etching system for supplying plasma-creating power, and plasma generated in the plasma etching system may react with a surface of a target (e.g., a wafer, any layer overlying the wafer, etc.) to create a byproduct that is removed, thereby yielding an etched surface of the target.
- a target e.g., a wafer, any layer overlying the wafer, etc.
- the complexity of integrated circuit manufacturing is increased.
- FIG. 1 is a schematic cross-sectional view illustrating a semiconductor processing apparatus according to some embodiments of the present disclosure.
- FIG. 2 is a schematic perspective view illustrating a state that a shield is installed according to some embodiments of the present disclosure.
- FIG. 3 A is a schematic perspective view illustrating a shield of a semiconductor processing apparatus according to some embodiments of the present disclosure.
- FIG. 3 B is a schematic enlarged view illustrating conductive slices of a shield according to some embodiments of the present disclosure.
- FIG. 4 is a schematic enlarged view illustrating a dashed box outlined in FIG. 3 A according to some embodiments of the present disclosure.
- FIG. 5 is a schematic top view illustrating a shield and a coil of a semiconductor processing apparatus according to some embodiments of the present disclosure.
- FIG. 6 is a schematic perspective view illustrating a shield of a semiconductor processing apparatus according to some embodiments of the present disclosure.
- FIG. 7 is a schematic view illustrating a shield including a casing and a block before assembled according to some embodiments of the present disclosure.
- FIG. 8 is a schematic perspective view illustrating a shield of a semiconductor processing apparatus according to some embodiments of the present disclosure.
- FIG. 9 is a schematic perspective view illustrating a shield of a semiconductor processing apparatus according to some embodiments of the present disclosure.
- FIG. 10 is a schematic perspective view illustrating a shield of a semiconductor processing apparatus according to some embodiments of the present disclosure.
- first and second features are formed in direct contact
- additional features may be formed between the first and second features, such that the first and second features may not be in direct contact
- present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
- spatially relative terms such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures.
- the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures.
- the apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.
- FIG. 1 is a schematic cross-sectional view illustrating a semiconductor processing apparatus according to some embodiments of the present disclosure.
- a semiconductor processing apparatus 100 includes an assembly utilized for generating plasma.
- the semiconductor processing apparatus 100 is configured to perform plasma etching on a semiconductor workpiece.
- the semiconductor processing apparatus 100 is used to performed plasma processes including plasma enhanced chemical vapor deposition, sputtering, ashing, cleaning, etc.
- the semiconductor processing apparatus 100 includes a shield 110 surrounding a plasma-generating chamber 10 , a coil 120 disposed around the shield 110 and connected to a power source 20 , and a gas inlet 130 disposed at the upstream side 10 a of the plasma-generating chamber 10 .
- the coil 120 is coupled to the power source 20 and may have other end coupled to a ground 25 .
- the ground 25 is a grounding tab attached to a portion of the chamber lid, or some other conductor to ground.
- the power source 20 provides radio frequency (RF) power to the coil 120 at a desired frequency to generate the RF current flowing through the coil 120 .
- the plasma density may be controlled by the applied RF current or power delivered to the coil 120 .
- An electric field may be generated in the plasma-generating chamber 10 based on time variation of the magnetic fields.
- the RF current generates the axial magnetic field B and the resultant azimuthal electric field E as indicated in FIG. 1 .
- the high voltage applied to the coil 120 may yield the electrostatic field along the coil 120 .
- the electric field generated by the coil 120 ionizes the gas flowing from the gas inlet 130 to produce the plasma 30 in the plasma-generating chamber 10 .
- the gas inlet 130 including pipelines and gas supply system is simplified in FIG. 1 for ease of illustration, and the gas (e.g., the inert gas, the processing gas, or the like) may be supplied from the gas inlet 130 for plasma generation.
- the term “plasma” used herein may refer to plasma products including ions, electrons, and neutral species, or the like. In some embodiments, generation of the plasma 30 is confined to the plasma-generating chamber 10 surrounded by the coil 120 .
- the shield 110 is disposed on an exterior wall 10 w of the plasma-generating chamber 10 and located between the plasma-generating chamber 10 and the coil 120 .
- the shield 110 may be referred to as a Faraday shield which plays an important role in optimizing the RF power efficiency.
- the improved RF power efficiency may facilitate producing high density plasmas in the plasma-generating chamber 10 for semiconductor processing, thereby increasing the productivity and the yield of the semiconductor manufacturing process.
- the shield 110 has the shape of a circular cylindrical shell. In other embodiments, the shield 110 is formed in shape of hollow square column.
- the shield 110 may take various forms, and may be built in a variety of ways as will be described later in other embodiments.
- the coil 120 is wound into a ring shape, or wound in a helical manner to surround the shield 110 .
- other types of the coil may be used in other embodiments, including without limitation, spiral coils in a flat plane or above the plasma-generating chamber 10 , or other coils for inductively coupling power into the plasma-generating chamber 10 .
- the semiconductor processing apparatus 100 includes a screen 140 disposed at the downstream side 10 b (e.g., opposing to the upstream side 110 a ) of the plasma-generating chamber 10 for preventing the workpiece W directly exposed to the plasma 30 .
- the screen 140 may be an ion screen and/or an ultraviolet (UV) light screen.
- the plasma 30 flows through the screen 140 , so that electrons in the plasma 30 may be repelled and positive ions may be collected.
- the screen 140 serves as a baffle so that no energetic photons (e.g., UV light) can pass through the screen 140 .
- the screen 140 is separated the plasma-generating chamber 10 from a processing chamber 15 .
- the processing chamber 15 in which is contained the workpiece W for processing.
- the plasma 30 passes through the screen 140 to the processing chamber 15 and reacts with a surface of the workpiece W to create a byproduct that is removed, thereby yielding an etched surface of the workpiece W.
- the workpiece W is a semiconductor wafer or includes a semiconductor substrate on which a layer (e.g., a dielectric layer, a conductive layer, a semiconductor material layer, etc.) is formed.
- a chuck 40 e.g., an electrostatic chuck or the like
- a gas exhaust 150 is coupled to the processing chamber 15 , and at least a portion of the reaction products are exhausted along with used reactant gas form the processing chamber 15 through the gas exhaust 150 .
- the gas exhaust 150 including pipelines and pump or other exhaust system is simplified in FIG. 1 for ease of illustration.
- FIG. 2 is a schematic perspective view illustrating a state that a shield is installed according to some embodiments of the present disclosure, where some elements of the semiconductor processing apparatus are omitted for ease of illustration
- FIG. 3 A is a schematic perspective view illustrating a shield of a semiconductor processing apparatus according to some embodiments of the present disclosure
- FIG. 3 B is a schematic enlarged view illustrating conductive slices of a shield according to some embodiments of the present disclosure
- FIG. 4 is a schematic enlarged view illustrating a dashed box outlined in FIG. 3 A according to some embodiments of the present disclosure
- FIG. 5 is a schematic top view illustrating a shield and a coil of a semiconductor processing apparatus according to some embodiments of the present disclosure, where the number of conductive slices of the shield is shown for illustrative purposes.
- the shield 110 includes a plurality of conductive slices 112 oriented along the circumference of the plasma-generating chamber 10 and substantially parallel to one another in a winding direction WD of the coil 120 .
- the winding direction WD is illustrated as a counter-clockwise direction, the coil may be wound around the shield in a clockwise direction in other embodiments.
- the conductive slices 112 are spaced and axially extending segments surrounded by the coil 120 . For example, as shown in FIG.
- the respective conductive slices 112 have a length along a first axis A 1 which is perpendicular to a second axis A 2 that the coil 120 is disposed.
- the first axis A 1 is the Z axis.
- the conductive slices 112 may be any material or combination of materials provided they are conductive.
- the material of the conductive slices 112 includes aluminum, iron, copper, silicon steel sheet, silver, gold, platinum, metallic alloys, combination of these, or the like.
- each of the conductive slices 112 has facets 112 s substantially parallel to the exterior wall 10 w of the plasma-generating chamber 10 (labelled in FIG. 1 ).
- Each facet 112 s of the respective conductive slice 112 may have a facet width defined by two side edges ( 1121 and 1122 ) extending along the first axis A 1 , where the first axis A 1 is substantially perpendicular to the second axis A 2 in which the coil 120 is wound.
- the facet width may be viewed as the thickness T of the respective conductive slice 112 .
- two opposing facets 112 s which are respectively proximal to and distal to the exterior wall 10 w of the plasma-generating chamber 10 , have approximately the same facet width.
- the top surface or the bottom surface of the respective conductive slice 112 is formed in the shape of a rectangular (or square).
- the opposing facets 112 s have different facet widths.
- the facet width of the facet 112 s proximal to the exterior wall 10 w of the plasma-generating chamber 10 is greater than the facet width of the facet 112 s distal to the exterior wall 10 w of the plasma-generating chamber 10 .
- the top surface or the bottom surface of the first type of conductive slice 112 is formed in the shape of a trapezoid which is tapered in a direction away from the exterior wall 10 w of the plasma-generating chamber 10 .
- the facet width of the facet 112 s distal to the exterior wall 10 w of the plasma-generating chamber 10 is greater than the facet width of the facet 112 s proximal to the exterior wall 10 w of the plasma-generating chamber 10 .
- the top surface or the bottom surface of the respective conductive slice 112 is formed in the shape of a trapezoid which is tapered toward the exterior wall 10 w of the plasma-generating chamber 10 .
- each of the conductive slices 112 including the side edges 1121 and 1122 forms therebetween an eddy current as indicated by arrow ED.
- the eddy current losses of the shield 110 are proportional to the square of the thickness T of the shield 110 . It follows from the eddy current loss formula that the reduction of the eddy current losses is effective if the thickness T of the respective conductive slice 112 is small. For example, losses due to eddy currents may be minimized by a discontinuous or sliced shield, thereby efficiently generating the magnetic fields.
- the thickness T of the respective conductive slice 112 ranges from about 0.01 mm to about 10 mm. It should be noted that the thickness T of the respective conductive slice 112 may be selected depending on the technique(s) that is employed to fabricate the shield 110 and/or the process requirements of the semiconductor processing apparatus 100 .
- the shield 110 includes different types of conductive slices (e.g., 112 a , 112 b , 112 c , and 112 d ) which are separately arranged and extend out radially from the center of the plasma-generating chamber 10 .
- one type of conductive slices e.g., 112 a , 112 b , and 112 c
- the first type of conductive slices is of different lengths.
- the facet 112 s of the respective conductive slice 112 has a facet length defined by a top edge 1123 and a bottom edge 1124 extending along the second axis A 2 and connected to the side edges 1121 and 1122 .
- the facet length may be viewed as the length L of the first type of conductive slices (e.g., 112 a , 112 b , and 112 c ).
- the first type of conductive slices e.g., 112 a , 112 b , and 112 c
- the conductive slice 112 a located at the top of the shield 110 is shorter than the conductive slice 112 b located at the middle of the shield 110 and/or shorter than the conductive slice 112 c located at the bottom of the shield 110 .
- the lengths of the first type of conductive slices e.g., 112 a , 112 b , and 112 c ) are substantially the same or similar depending on the product requirements. It should be noted that the lengths L of the conductive slices 112 depend on the product requirement and construe no limitation in the disclosure.
- the shield 110 includes another type of conductive slices (e.g., 112 d ).
- the respective conductive slice 112 d is of a cuboid shape having a recess.
- the respective conductive slice 112 d includes the elongated facet 112 s proximal to the exterior wall 10 w of the plasma-generating chamber 10 and more than one discrete facet 112 s distal to the exterior wall 10 w of the plasma-generating chamber 10 .
- the elongated facet 112 s and the discrete facets 112 s of the respective conductive slice 112 d are opposite to one another and the facet width of the elongated facet 112 s may be substantially equal to the facet widths of the discrete facets 112 s .
- the facet width of the elongated facet 112 s is different from the facet widths of the discrete facets 112 s .
- the facet width of the elongated facet 112 s proximal to the exterior wall 10 w of the plasma-generating chamber 10 is greater than the facet widths of the respective discrete facets 112 s distal to the exterior wall 10 w of the plasma-generating chamber 10 .
- the top surface or the bottom surface of the second type of conductive slice 112 d is formed in the shape of a trapezoid which is tapered in a direction away from the exterior wall 10 w of the plasma-generating chamber 10 .
- the facet width of the respective discrete facet 112 s distal to the exterior wall 10 w of the plasma-generating chamber 10 is greater than the facet width of the elongated facet 112 s proximal to the exterior wall 10 w of the plasma-generating chamber 10 .
- the top surface or the bottom surface of the respective conductive slice 112 d is formed in the shape of a trapezoid which is tapered toward the exterior wall 10 w of the plasma-generating chamber 10 .
- the top surface or the bottom surface of the respective conductive slice 112 d may be tapered toward the same direction to the top surface or the bottom surface of the first type of the conductive slices (e.g., 112 a , 112 b , and 112 c ). In other embodiments, the top surface or the bottom surface of the respective conductive slice 112 d may be tapered toward the opposing direction to the top surface or the bottom surface of the first type of the conductive slices (e.g., 112 a , 112 b , and 112 c ).
- the first type of the conductive slices ( 112 a , 112 b , and 112 c ) and the second type of the conductive slice 112 d are of the same or similar thickness to facilitate producing a uniform magnetic field.
- the respective conductive slice 112 d may include an upper portion, a lower portion, and a middle portion connected to the upper portion and the lower portion.
- the upper portion of the respective conductive slice 112 d may have the same or similar shape(s) to the conductive slice 112 a located at the top of the shield 110
- the lower portion of the respective conductive slice 112 d may have the same or similar shape to the conductive slice 112 c located at the bottom of the shield 110 .
- the middle portion of the respective conductive slice 112 d may be longer than the conductive slice 112 b located at the middle of the shield 110 .
- the conductive slices ( 112 a , 112 b , and 112 c ) are separately arranged along the first axis A 1 , and the total length of the respective conductive slice 112 d is greater than the total length of the conductive slices ( 112 a , 112 b , and 112 c ).
- the total length of the conductive slice 112 d may be considered as the height of the shield 110 .
- the conductive slice 112 d may be configured to adjoin with the conductive slices ( 112 a , 112 b , and 112 c ).
- the conductive slice 112 d is substantially parallel to the conductive slices ( 112 a , 112 b , and 112 c ) which are discontinuously and vertically arranged.
- the first type and the second type of the conductive slices 112 are alternately arranged along the circumference of the plasma-generating chamber 10 .
- a group of the first types of the conductive slices 112 and a group of the second types of the conductive slices are configured in a repetitive arrangement, where the group of first types of the conductive slices includes the conductive slices (e.g., 112 a located at the top of the shield, 112 b located at the middle of the shield, and 112 c located at the bottom of the shield) separately arranged along the circumference of the plasma-generating chamber 10 , and the group of the second type of the conductive slices includes the conductive slices 112 d separately arranged along the circumference of the plasma-generating chamber 10 .
- the first type and the second type of the conductive slices 112 are arranged in non-repetitive patterns such as random patterns.
- a width (e.g., W and W′) of the first type of the conductive slices is a distance of the side edge 1125 extending along a third axis A 3 , where the third axis A 3 is perpendicular to the first axis A 1 and the second axis A 2 .
- the conductive slices e.g., 112 a and 112 c respectively located at the top and the bottom of the shield 110 ) are of the same or similar widths W.
- the widths W of the conductive slices ( 112 a and 112 c ) are greater than the width W′ of the conductive slice 112 b located at the middle of the shield 110 .
- the widths W of the conductive slices ( 112 a and 112 c ) correspond to the widths of the upper portion and the lower portion of the conductive slice 112 d
- the width W′ of the conductive slice 112 b corresponds to the width of the middle portion of the conductive slice 112 d .
- the shape of the shield illustrated herein is an example.
- the shield 110 may include more than two types of conductive slices or may include a single type (e.g., the first type, the second type, or other type) of the conductive slice.
- other shapes, sizes, and configurations of the conductive slices are possible as long as the eddy current loss is efficiently diminished in the shield 110 .
- adjacent conductive slices 112 may be electrically isolated from one another.
- two adjacent conductive slices 112 are spatially separated from one another.
- every adjacent two conductive slices 112 may define therebetween the respective gap G which is defined by the first edge 1121 of one conductive slice 112 and the second edge 1122 of another conductive slice 112 .
- each of the conductive slices 112 separated from any other of the conductive slices 112 may avoid the generation of a large amount of eddy current on the conductive slices 112 so as to diminish the eddy current loss generated by the shield 110 .
- the figures provided herein are not drawn to scale and are for illustrative purposes.
- the gap G is less than the thickness T of the respective conductive slice 112 .
- the gap G is greater than or substantially equal to the thickness T of the conductive slice 112 .
- the gaps G are low conductivity areas which may restrict the flow of eddy currents in the shield 110 .
- the shield 110 includes a spacer 114 formed in the gaps G to space apart every adjacent two conductive slices 112 .
- the conductive slices 112 may be embedded in the spacer 114 , and at least the facets 112 s of the conductive slices 112 that face the coil 120 may be exposed by the spacer 114 .
- the spacer 114 includes a plurality of spacer slices, and the conductive slices 112 and the spacer slices may be alternately arranged.
- the material of the spacer 114 may be either much less conductive than the conductive slice 112 or may be an insulator.
- the union of the plurality of conductive slices 112 and the spacer 114 forms the shield 110 .
- the material of the spacer 114 includes plastic polymer, rubber, epoxy, ceramic, combination of these, any electrically insulating material, or the like.
- the adjacent conductive slices 112 are joined by the spacer 114 .
- the spacer 114 includes adhesive material(s) which may be formed of a glue layer, a coated layer, a thin adhering film, or the like.
- a number of techniques may be employed alone or in conjunction to fabricate the shield 110 .
- the shield 110 may be fabricated by injection molding, three-dimensional (3D) printing, or any suitable techniques.
- the conductive slices 112 are pre-formed and inserted in a mold cavity (not shown) with an intended arrangement as mentioned above, and then the material of spacer 114 is injected into the mold cavity to create the final integrated assembly of the shield 110 .
- the cavity C 1 is formed between the row of the conductive slices 112 a at the top of the shield 110 and the row of the conductive slices 112 b at the middle of the shield 110 .
- the cavity C 2 may be or may not be also formed between the row of the conductive slices 112 c at the bottom of the shield 110 and the row of the conductive slices 112 b at the middle of the shield 110 .
- the cavity (e.g., C 1 and/or C 2 ) may be air cavity or may be filled by an insulator.
- the gap G and the cavities (C 1 and C 2 ) between any adjacent conductive slices are filled by the spacer 114 to create the shield 110 with integral outer surface.
- the shield 110 may have an inner diameter Di that is large enough to process a semiconductor workpiece (e.g., a semiconductor wafer having about 300 mm diameters or having other dimension).
- the shield including conductive slices discontinuously arranged may be applied to an induced coupled plasma (ICP) tool or a transformer coupled plasma (TCP) reactor which is not limited thereto.
- ICP induced coupled plasma
- TCP transformer coupled plasma
- the number, the shape, and the size of conductive slices 112 and the spacer 114 may be varied to accommodate different process requirements.
- the shield shown herein is provided as an example and variations thereof may be carried out while still remaining within the scope of the disclosure.
- FIG. 6 is a schematic perspective view illustrating a shield of a semiconductor processing apparatus according to some embodiments of the present disclosure
- FIG. 7 is a schematic view illustrating a shield including a casing and a block before assembled according to some embodiments of the present disclosure.
- a shield 210 adapted to be surrounded by the coil of the semiconductor processing apparatus is provided.
- the configuration of the shield 210 in the semiconductor processing apparatus may be similar to the shield 110 of the semiconductor processing apparatus 100 as described above, so the detailed description is omitted for brevity.
- the shield 210 may be referred to as a Faraday shield which plays an important role in improving the RF power efficiency for the semiconductor processing apparatus.
- the shield 210 is designed to suppress or diminish eddy currents so as to avoid the shield 210 from generating eddy current losses.
- the shield 210 includes a casing 212 and a plurality of blocks 214 embedded in the casing 212 .
- the casing 212 includes an upper portion 212 a , a lower portion 212 c , and a plurality of middle portions 212 b respectively connected to the upper portion 212 a and the lower portion 212 c .
- the upper portion 212 a and the lower portion 212 c are circular in shape, and the middle portions 212 b are separately oriented along the circumferences of the upper portion 212 a and the lower portion 212 c .
- the upper portion 212 a and the lower portion 212 c may be any shape such as circular, square, rectangular, oval, etc.
- the upper portion 212 a and the lower portion 212 c includes the same or similar conductive material including aluminum, iron, copper, silicon steel sheet, silver, gold, platinum, metallic alloys, combination of these, etc.
- the middle portions 212 b are separately distributed around the middle of the shield 210 .
- adjacent two of the middle portions 212 b are spatially apart from one another by a gap C 3 .
- the gaps C 3 may be air gaps or filled by an insulator (not shown).
- the respective gap C 3 is formed as an approximately I-shaped gap between adjacent two of the middle portions 212 b .
- the shape of the respective gap C 3 may depend on the shape of the adjacent middle portions 212 b , which is not limited thereto.
- the coil 120 is wound around the middle portions 212 b of the shield 210 .
- each of the middle portions 212 b includes a middle frame b 1 and at least two posts b 2 respectively extending to be connected to the upper portion 212 a and the lower portion 212 c .
- the middle frames b 1 of the middle portions 212 b may be surrounded by the coil 120 .
- the middle frame b 1 and the posts b 2 may be integratedly formed and may include the same or similar conductive material including aluminum, iron, copper, silicon steel sheet, silver, gold, platinum, metallic alloys, combination of these, etc.
- one of the post b 2 of the respective middle portion 212 b is connected to the upper middle edge of the middle frame b 1 and the upper portion 212 a
- the other one of the post b 2 of the respective middle portion 212 b is connected to the lower middle edge of the middle frame b 1 and the lower portion 212 c .
- more than two posts b 2 are distributed at the upper edge (and/or the lower edge) of the middle frame b 1 .
- the width b 1 w of the middle frame b 1 is substantially the same or similar to the width b 2 w of the respective posts b 2 .
- the width b 1 w of the middle frame b 1 is greater than or less than the width b 2 w of the respective posts b 2 .
- the width b 1 w of the middle frame b 1 and the width b 2 w of the respective posts b 2 are designed to suppress or minimize eddy currents within the shield 210 .
- the number and the shape of the respective post b 2 construe no limitation in the disclosure as long as the posts b 2 can provide support to the middle frame b 1 for connecting the upper portion 212 a and the lower portion 212 c.
- the middle frame b 1 may be provided with a window opening b 1 a .
- the middle frame b 1 is a substantially rectangular middle frame with a hollow central section.
- the shape of each middle frame b 1 of the respective middle portion 212 b is not necessarily limited to rectangular, circular, elliptical, triangular, polygonal, or the like.
- each of the plurality of blocks 214 is held in place within one of the window openings b 1 a of the respective middle frame b 1 of the middle portions 212 b .
- the respective block 214 is complimentary in shape to the corresponding window opening b 1 a of the middle frame b 1 .
- each of the blocks 214 includes a plurality of conductive slices 214 a discontinuously arranged aside one another.
- the conductive slices 214 a may be separately arranged along a winding direction of the coil 120 and overlap with the coil 120 .
- the conductive slices 214 a are spaced and longitudinally extending segments surrounded by the coil 120 .
- the respective slice may be formed in the shape of a rectangular (or square).
- the conductive slices 214 a are arranged side by side with a gap, and the respective conductive slice 214 a extends along the first axis A 1 perpendicular to the second axis A 2 in which the coil 120 is wound.
- the conductive slices 214 a may be any material or combination of materials provided which are conductive, such as aluminum, iron, copper, silicon steel sheet, silver, gold, platinum, metallic alloys, combination of these, or the like.
- each of the conductive slices 214 a has a facet 214 s facing the coil 120 , and a facet width 214 sw of the facet 214 s may be defined by two side edges ( 2141 and 2142 ) extending along the first axis A 1 .
- the facet width 214 sw of the respective conductive slice 214 a is substantially the same or similar to the width b 1 w of the middle frame b 1 .
- the width b 1 w of the middle frame b 1 is greater than or less than the facet width 214 sw of the conductive slices 214 a .
- the facet widths 214 sw of the conductive slices 214 a are substantially uniform.
- the facet width 214 sw of the respective conductive slice 214 a ranges from about 0.01 mm to about 10 mm.
- the facet widths 214 sw of the conductive slices 214 a may be adjusted depending on the technique(s) that is employed to fabricate the shield 210 and the process requirements of the semiconductor processing apparatus.
- the number of conductive slices, slice shapes, and slice sizes of the blocks may be varied as necessary to accommodate different semiconductor processing requirements.
- each of the conductive slices 214 a including the side edges ( 2141 and 2142 ) forms therebetween an eddy current as indicated by arrow ED in FIG. 7 .
- the eddy current losses of the shield 210 are proportional to the square of the facet width 214 sw of the conductive slices 214 a .
- the respective block 214 includes a spacer 214 b disposed between adjacent conductive slices 214 a .
- the spacers 214 b of the blocks 214 are made of material(s) which is much less conductive than the conductive slices 214 a to restrict the flow of eddy currents in the middle portions 212 b of the shield 110 .
- the spacer 214 b includes plastic polymer, rubber, epoxy, ceramic, and combination of these or any electrically insulating material that may electrically isolate the conductive slices 214 a from one another.
- the respective conductive slice 214 a is surrounded by the spacer 214 b .
- the conductive slices 214 a are embedded in the spacer 214 b , and at least the facets 214 s of the conductive slices 214 a that face the coil 120 may be exposed by the spacer 214 b .
- the width of a portion of the spacer 214 b between adjacent two of the conductive slices 214 a may be less than the facet width 214 sw of the respective conductive slice 214 a .
- the width of a portion of the spacer 214 b between adjacent conductive slices 214 a is substantially equal to or greater than the facet width 214 sw of the respective conductive slice 214 a.
- the spacer 214 b at least covers the side edges ( 2141 and 2142 ) of the respective conductive slice 214 a .
- the top and bottom edges ( 2143 and 2144 ) connected to the side edges ( 2141 and 2142 ) are also covered by the spacer 214 b so that the conductive slices 214 a inserted into the window openings b 1 a is spaced apart from the corresponding middle frame b 1 .
- the spacer 214 b is made of an electrically insulating material
- the conductive slices 214 a of the respective block 214 is electrically isolated from the corresponding middle frame b 1 .
- the spacer 214 b is formed with a uniform width.
- a portion of the spacer 214 b between the side edges of adjacent conductive slices 214 a is narrower than a portion of the spacer between the top edge (or the bottom edge) of the respective conductive slice 214 a and the middle frame b 1 .
- a portion of the spacer 214 b between the side edges of adjacent conductive slices 214 a is wider than a portion of the spacer between the top edge (or the bottom edge) of the respective conductive slice 214 a and the middle frame b 1 .
- the adjacent conductive slices 214 a are joined by the spacer 214 b .
- the spacer 214 b includes adhesive material(s) which may be formed of a glue layer, a coated layer, a thin adhering film, or the like. The material, the shape, and the size of the spacer may be varied as necessary to accommodate different semiconductor processing requirements.
- the casing 212 and the blocks 214 are separately formed.
- the window openings b 1 a of the middle frames b 1 may be formed of a shape substantially complementary to the shape of the block 214 . It should be noted that only one block 214 is shown in FIG. 7 for illustrative purposes.
- the respective block 214 is fit into the corresponding window opening b 1 a of the middle frame b 1 , and the facets 214 s of the conductive slices 214 a exposed by the spacer 214 b may face an inner peripheral surface of the coil 120 .
- the spacer 214 b of the respective block 214 includes adhesive material(s) and wrapping around at least the edges of the conductive slices 214 a , so that the respective block 214 may be adhered to the middle frame b 1 through the spacer 214 b .
- the block 214 and the casing 212 of the shield 210 shown in FIG. 7 is an illustrative examples and should not be considered as limiting to the disclosure.
- FIG. 8 is a schematic perspective view illustrating a shield of a semiconductor processing apparatus according to some embodiments of the present disclosure.
- a shield 310 adapted to be surrounded by the coil of the semiconductor processing apparatus is provided.
- the shield 310 may be referred to as a Faraday shield which plays an important role in improving the RF power efficiency for the semiconductor processing apparatus.
- the shield 310 is designed to suppress or diminish eddy currents so as to avoid the shield 310 from generating eddy current losses.
- the shield 310 in the semiconductor processing apparatus may be similar to the shield 210 described in FIG. 6 , so the detailed description is omitted for brevity.
- the difference between the shields 210 and 310 includes the configuration of the middle portion 312 b.
- a plurality of middle portions 312 b is respectively connected to the upper portion 212 a and the lower portion 212 c .
- the middle portions 312 b are separately distributed around the middle of the shield 310 .
- adjacent two of the middle portions 312 b are spatially apart from one another by the gap C 3 .
- the gaps C 3 may be air gaps or filled by an insulator (not shown).
- the respective gap C 3 is formed as an approximately I-shaped gap between adjacent two of the middle portions 312 b .
- the shape of the respective gap C 3 may depend on the shape of the adjacent middle portions 312 b , which is not limited thereto.
- the coil 120 is wound around the middle portions 312 b of the shield 310 .
- each of the middle portions 312 b includes a middle frame b 1 ′ and at least two posts b 2 respectively extending to be connected to the upper portion 212 a and the lower portion 212 c .
- the middle frames b 1 ′ of the middle portions 312 b may be surrounded by the coil 120 .
- the middle frame b 1 ′ and the posts b 2 may be integratedly formed and may include the same or similar conductive material including aluminum, iron, copper, silicon steel sheet, silver, gold, platinum, metallic alloys, combination of these, etc.
- the respective middle frame b 1 ′ is provided with a plurality of conductive slices 3122 separately arranged along the widthwise direction (i.e. the second axis A 2 ).
- the respective conductive slice 3122 extends along in the lengthwise direction (i.e. the first axis A 1 ).
- the conductive slices 3122 may be made of the same or similar conductive material as the middle frame b 1 ′.
- the conductive slices 3122 are integratedly formed with or secured to the middle frame b 1 ′.
- the conductive slices 3122 have the uniform dimension. In other embodiments, the conductive slices are of different dimensions as will be described later.
- middle frame and the conductive slices are not necessarily limited to rectangular, circular, elliptical, triangular, polygonal, or the like.
- a single conductive slice 3122 is disposed on the middle frame b 1 ′. It is also noted that the numbers of the conductive slices 3122 illustrated in FIG. 8 is merely an example and construe no limitation in the disclosure.
- the middle frame b 1 ′ and the conductive slice 3122 adjacent to the middle frame b 1 ′ may be spaced apart from each other by a gap G 1 .
- the neighboring conductive slices 3122 may be spaced apart from one another by a gap G 2 .
- the conductive slices 3122 are evenly distributed by the uniform gaps G 1 and G 2 .
- the dimension of the gap G 1 is greater than or less than that of the gap G 2 .
- the spacer 3126 fills the gaps G 1 and G 2 to laterally separate the neighboring conductive slices 3122 from one another and also separate the conductive slices 3122 from the middle frame b 1 ′.
- the spacer 3126 includes plastic polymer, rubber, epoxy, ceramic, combination of these, or other suitable electrically insulating material.
- the configuration of the middle portion 312 b illustrated in FIG. 8 is merely an example and may be adjusted depending on the product and process requirements.
- FIG. 9 is a schematic perspective view illustrating a shield of a semiconductor processing apparatus according to some embodiments of the present disclosure.
- a shield 410 adapted to be surrounded by the coil of the semiconductor processing apparatus is provided.
- the shield 410 may be referred to as a Faraday shield which plays an important role in improving the RF power efficiency for the semiconductor processing apparatus.
- the shield 410 is designed to suppress or diminish eddy currents so as to avoid the shield 310 from generating eddy current losses.
- the shield 410 in the semiconductor processing apparatus may be similar to the shield 310 described in FIG. 8 , so the detailed description is omitted for brevity.
- the difference between the shields 310 and 410 includes the configuration of the middle portion 412 b.
- the middle frames b 1 ′′ of the middle portions 412 b may be surrounded by the coil 120 .
- the middle frame b 1 ′′ and the posts b 2 may be integratedly formed and may include the same or similar conductive material including aluminum, iron, copper, silicon steel sheet, silver, gold, platinum, metallic alloys, combination of these, etc.
- the respective middle frame b 1 ′′ is provided with a plurality of first conductive slices 4122 and a plurality of second conductive slices 4124 alternately and separately arranged along the widthwise direction (i.e. the second axis A 2 ).
- the respective first conductive slice 4122 and the respective second conductive slice 4124 extend along in the lengthwise direction (i.e. the first axis A 1 ).
- the first conductive slices 4122 and the second conductive slices 4124 may be made of the same or similar conductive material as the middle frame b 1 ′.
- the first conductive slices 4122 and the second conductive slices 4124 are integratedly formed with or secured to the middle frame b 1 ′′.
- the first conductive slices 4122 and the second conductive slices 4124 have the same or similar lengths, while the widths 4122 w of the first conductive slices 4122 are greater than the widths 4124 w of the second conductive slices 4124 . In other embodiments, the widths 4122 w of the first conductive slices 4122 are substantially equal to or less than the widths 4124 w of the second conductive slices 4124 . It should be noted that the shapes of middle frame and the conductive slices are not necessarily limited to rectangular, circular, elliptical, triangular, polygonal, or the like. In some other embodiments, a single first conductive slice 4122 and a single second conductive slice 4124 may be separately disposed on the middle frame b 1 ′. It is also noted that the numbers of the first conductive slices 4122 and the second conductive slices 4124 illustrated in FIG. 9 is merely an example and construe no limitation in the disclosure.
- the middle frame b 1 ′′ and the second conductive slice 4124 adjacent to the middle frame b 1 ′′ may be spaced apart from each other by a gap G 1 ′, and the first conductive slice 4122 and the second conductive slice 4124 adjacent to the first conductive slice 4122 may be spaced apart from each other by a gap G 2 ′.
- the dimension of the gap G 1 ′ is greater than or substantially equal to that of the gap G 2 ′.
- the dimension of the gap G 1 ′ is less than that of the gap G 2 ′.
- the gaps G 1 ′ between the middle frames b 1 ′′ and the second conductive slices 4124 may vary from one area to another.
- the gaps G 2 ′ between the first conductive slices 4122 and the second conductive slices 4124 may also vary from one area to another.
- the spacer 4126 fills the gaps G 2 ′ to laterally separate the first conductive slice 4122 from the adjacent second conductive slice 4124 .
- the spacer 4126 may also fill the gaps G 1 ′ between the middle frames b 1 ′ and the second conductive slices 4124 .
- the material of the spacer 4126 may be similar to the spacer 3126 described in FIG. 8 .
- the first conductive slices 4122 are disposed aside the middle frame b 1 ′′, and the middle frame b 1 ′′ and the first conductive slice 4122 adjacent to the middle frame b 1 ′′ may be spaced apart from each other by a gap. Under such scenario, the spacer 4126 may fill the gaps between the middle frames b 1 ′ and the first conductive slices 4122 .
- the configuration of the middle portion 412 b illustrated in FIG. 9 is merely an example and may be adjusted depending on the product and process requirements.
- FIG. 10 is a schematic perspective view illustrating a shield of a semiconductor processing apparatus according to some embodiments of the present disclosure.
- a shield 510 including a plurality of first conductive slices 5112 and a plurality of second conductive slices 5114 separately and alternately arranged is provided.
- the shield 510 may be similar to the shield 110 described in FIG. 3 A , so the detailed descriptions are not repeated for the sake of brevity.
- the difference between the shields 510 and 110 includes that the thickness of the respective first conductive slice 5112 is different from that of the thickness of the respective second conductive slice 5114 .
- the thickness T 1 of the respective first conductive slice 5112 is greater than the thickness T 2 of the respective second conductive slice 5114 .
- the thickness T 1 of the first conductive slice 5112 is a few times or a hundred times greater than the thickness T 2 of the second conductive slice 5114 .
- the thickness T 1 of the first conductive slice 5112 may be a thousand times greater than the thickness T 2 of the second conductive slice 5114 .
- the dimensions of the first conductive slice 5112 and the second conductive slice 5114 may vary depending on the product and process requirements.
- a gap G′ is formed between the neighboring first conductive slice 5112 and second conductive slice 5114 .
- the first conductive slices 5112 and the second conductive slices 5114 are spaced apart from one another by the uniform gaps G′.
- the gaps G′ vary from one area to another along the circumference of the plasma-generating chamber 10 .
- the spacer 5116 is formed in the gaps G′ to physically separate the neighboring first conductive slice 5112 and second conductive slice 5114 .
- the first conductive slices 5112 and the second conductive slices 5114 are embedded in the spacer 5116 , and at least the facets of the respective first conductive slice 5112 and the respective second conductive slice 5114 that face the coil may be exposed by the spacer 5116 .
- the spacer 5116 includes a plurality of spacer slices, and the conductive slices (e.g., 5112 and 5114 ) and the spacer slices are alternately arranged.
- the material of the spacer 5116 may be either much less conductive than the conductive slice or may be an insulator.
- the material of the spacer 5116 is similar to the spacer 114 described in FIG. 3 A .
- a number of techniques may be employed alone or in conjunction to fabricate the shield 510 .
- the shield 510 may be fabricated by injection molding, three-dimensional (3D) printing, or any suitable techniques. The union of the first conductive slices 5112 , the second conductive slices 5114 , and the spacer 5116 forms the shield 510 .
- a Faraday shield includes a plurality of conductive slices and a spacer interposed between adjacent two of the conductive slices to electrically isolate the adjacent two of the conductive slices from one another.
- the conductive slices are separately arranged aside one another and oriented along a circumference of the Faraday shield.
- a coil is wound around the circumference of the Faraday shield.
- a semiconductor processing apparatus includes a plasma-generating chamber adapted to generate plasma therein, a coil surrounding the plasma-generating chamber and coupled to a power source, and a shield interposed between the coil and the plasma-generating chamber.
- the shield includes a plurality of conductive slices discontinuously arranged along an exterior wall of the plasma-generating chamber.
- an etching apparatus includes a plasma-generating chamber adapted to generate plasma therein, a processing chamber disposed below the plasma-generating chamber and adapted to process a semiconductor workpiece, a shield disposed on an exterior wall of the plasma-generating chamber, and a coil coupled to a power source to supply a plasma-creating power.
- the shield includes a plurality of conductive slices arranged parallel to one another along the exterior wall of the plasma-generating chamber. The coil is wound around the conductive slices of the shield.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
A Faraday shield, a semiconductor processing apparatus, and an etching apparatus are provided. The Faraday shield includes a plurality of conductive slices and a spacer interposed between adjacent two of the conductive slices to electrically isolate the adjacent two of conductive slices from one another. The conductive slices are separately arranged aside one another and oriented along a circumference of the Faraday shield. A coil is wound around the circumference of the Faraday shield.
Description
- This application is a divisional application of and claims the priority benefit of a prior application Ser. No. 16/928,008, filed on Jul. 14, 2020. The prior application Ser. No. 16/928,008 claims the priority benefit of U.S. provisional application Ser. No. 62/893,131, filed on Aug. 28, 2019. The entirety of each of the above-mentioned patent applications is hereby incorporated by reference herein and made a part of this specification.
- Plasma technology is widely used in semiconductor manufacturing processes. For example, plasma etching is one etching technique that is commonly used for selective processing, forming fine-pitched pattern, photoresist stripping, or the like. A radio frequency (RF) coil may be utilized in the plasma etching system for supplying plasma-creating power, and plasma generated in the plasma etching system may react with a surface of a target (e.g., a wafer, any layer overlying the wafer, etc.) to create a byproduct that is removed, thereby yielding an etched surface of the target. As semiconductor devices are being scaled down, the complexity of integrated circuit manufacturing is increased. Although the existing technologies have been adequate for their intended purposes, they have not been satisfactory in all respects.
- Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It is noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
-
FIG. 1 is a schematic cross-sectional view illustrating a semiconductor processing apparatus according to some embodiments of the present disclosure. -
FIG. 2 is a schematic perspective view illustrating a state that a shield is installed according to some embodiments of the present disclosure. -
FIG. 3A is a schematic perspective view illustrating a shield of a semiconductor processing apparatus according to some embodiments of the present disclosure. -
FIG. 3B is a schematic enlarged view illustrating conductive slices of a shield according to some embodiments of the present disclosure. -
FIG. 4 is a schematic enlarged view illustrating a dashed box outlined inFIG. 3A according to some embodiments of the present disclosure. -
FIG. 5 is a schematic top view illustrating a shield and a coil of a semiconductor processing apparatus according to some embodiments of the present disclosure. -
FIG. 6 is a schematic perspective view illustrating a shield of a semiconductor processing apparatus according to some embodiments of the present disclosure. -
FIG. 7 is a schematic view illustrating a shield including a casing and a block before assembled according to some embodiments of the present disclosure. -
FIG. 8 is a schematic perspective view illustrating a shield of a semiconductor processing apparatus according to some embodiments of the present disclosure. -
FIG. 9 is a schematic perspective view illustrating a shield of a semiconductor processing apparatus according to some embodiments of the present disclosure. -
FIG. 10 is a schematic perspective view illustrating a shield of a semiconductor processing apparatus according to some embodiments of the present disclosure. - The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
- Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.
-
FIG. 1 is a schematic cross-sectional view illustrating a semiconductor processing apparatus according to some embodiments of the present disclosure. Referring toFIG. 1 , asemiconductor processing apparatus 100 includes an assembly utilized for generating plasma. In some embodiments, thesemiconductor processing apparatus 100 is configured to perform plasma etching on a semiconductor workpiece. Alternatively, thesemiconductor processing apparatus 100 is used to performed plasma processes including plasma enhanced chemical vapor deposition, sputtering, ashing, cleaning, etc. - For example, the
semiconductor processing apparatus 100 includes ashield 110 surrounding a plasma-generating chamber 10, acoil 120 disposed around theshield 110 and connected to apower source 20, and agas inlet 130 disposed at theupstream side 10 a of the plasma-generatingchamber 10. In some embodiments, thecoil 120 is coupled to thepower source 20 and may have other end coupled to aground 25. For example, theground 25 is a grounding tab attached to a portion of the chamber lid, or some other conductor to ground. In some embodiments, thepower source 20 provides radio frequency (RF) power to thecoil 120 at a desired frequency to generate the RF current flowing through thecoil 120. The plasma density may be controlled by the applied RF current or power delivered to thecoil 120. An electric field may be generated in the plasma-generatingchamber 10 based on time variation of the magnetic fields. The RF current generates the axial magnetic field B and the resultant azimuthal electric field E as indicated inFIG. 1 . - The high voltage applied to the
coil 120 may yield the electrostatic field along thecoil 120. For example, the electric field generated by thecoil 120 ionizes the gas flowing from thegas inlet 130 to produce theplasma 30 in the plasma-generatingchamber 10. It should be noted that thegas inlet 130 including pipelines and gas supply system is simplified inFIG. 1 for ease of illustration, and the gas (e.g., the inert gas, the processing gas, or the like) may be supplied from thegas inlet 130 for plasma generation. The term “plasma” used herein may refer to plasma products including ions, electrons, and neutral species, or the like. In some embodiments, generation of theplasma 30 is confined to the plasma-generatingchamber 10 surrounded by thecoil 120. - In some embodiments, the
shield 110 is disposed on anexterior wall 10 w of the plasma-generatingchamber 10 and located between the plasma-generatingchamber 10 and thecoil 120. Theshield 110 may be referred to as a Faraday shield which plays an important role in optimizing the RF power efficiency. The improved RF power efficiency may facilitate producing high density plasmas in the plasma-generatingchamber 10 for semiconductor processing, thereby increasing the productivity and the yield of the semiconductor manufacturing process. In some embodiments, theshield 110 has the shape of a circular cylindrical shell. In other embodiments, theshield 110 is formed in shape of hollow square column. Theshield 110 may take various forms, and may be built in a variety of ways as will be described later in other embodiments. In the case of theshield 110 having a cylindrical shape, thecoil 120 is wound into a ring shape, or wound in a helical manner to surround theshield 110. It should be noted that other types of the coil may be used in other embodiments, including without limitation, spiral coils in a flat plane or above the plasma-generatingchamber 10, or other coils for inductively coupling power into the plasma-generatingchamber 10. - In some embodiments, the
semiconductor processing apparatus 100 includes ascreen 140 disposed at thedownstream side 10 b (e.g., opposing to the upstream side 110 a) of the plasma-generatingchamber 10 for preventing the workpiece W directly exposed to theplasma 30. Thescreen 140 may be an ion screen and/or an ultraviolet (UV) light screen. For example, theplasma 30 flows through thescreen 140, so that electrons in theplasma 30 may be repelled and positive ions may be collected. In some embodiments, thescreen 140 serves as a baffle so that no energetic photons (e.g., UV light) can pass through thescreen 140. In some embodiments, thescreen 140 is separated the plasma-generatingchamber 10 from aprocessing chamber 15. For example, below the plasma-generatingchamber 10 is theprocessing chamber 15 in which is contained the workpiece W for processing. - In some embodiments, the
plasma 30 passes through thescreen 140 to theprocessing chamber 15 and reacts with a surface of the workpiece W to create a byproduct that is removed, thereby yielding an etched surface of the workpiece W. Any variety of other processes may be performed according to other embodiments. For example, the workpiece W is a semiconductor wafer or includes a semiconductor substrate on which a layer (e.g., a dielectric layer, a conductive layer, a semiconductor material layer, etc.) is formed. In some embodiments, a chuck 40 (e.g., an electrostatic chuck or the like) is provided in theprocessing chamber 15 for supporting the workpiece W when present. In some embodiments, agas exhaust 150 is coupled to theprocessing chamber 15, and at least a portion of the reaction products are exhausted along with used reactant gas form theprocessing chamber 15 through thegas exhaust 150. It should be noted that thegas exhaust 150 including pipelines and pump or other exhaust system is simplified inFIG. 1 for ease of illustration. -
FIG. 2 is a schematic perspective view illustrating a state that a shield is installed according to some embodiments of the present disclosure, where some elements of the semiconductor processing apparatus are omitted for ease of illustration,FIG. 3A is a schematic perspective view illustrating a shield of a semiconductor processing apparatus according to some embodiments of the present disclosure,FIG. 3B is a schematic enlarged view illustrating conductive slices of a shield according to some embodiments of the present disclosure,FIG. 4 is a schematic enlarged view illustrating a dashed box outlined inFIG. 3A according to some embodiments of the present disclosure, andFIG. 5 is a schematic top view illustrating a shield and a coil of a semiconductor processing apparatus according to some embodiments of the present disclosure, where the number of conductive slices of the shield is shown for illustrative purposes. - With reference to
FIG. 2 ,FIG. 3A ,FIG. 3B , andFIG. 4 , theshield 110 includes a plurality ofconductive slices 112 oriented along the circumference of the plasma-generatingchamber 10 and substantially parallel to one another in a winding direction WD of thecoil 120. It is understood that although the winding direction WD is illustrated as a counter-clockwise direction, the coil may be wound around the shield in a clockwise direction in other embodiments. In some embodiments, theconductive slices 112 are spaced and axially extending segments surrounded by thecoil 120. For example, as shown inFIG. 3B , the respectiveconductive slices 112 have a length along a first axis A1 which is perpendicular to a second axis A2 that thecoil 120 is disposed. For example, the first axis A1 is the Z axis. Theconductive slices 112 may be any material or combination of materials provided they are conductive. For example, the material of theconductive slices 112 includes aluminum, iron, copper, silicon steel sheet, silver, gold, platinum, metallic alloys, combination of these, or the like. - In some embodiments, each of the
conductive slices 112 hasfacets 112 s substantially parallel to theexterior wall 10 w of the plasma-generating chamber 10 (labelled inFIG. 1 ). Eachfacet 112 s of the respectiveconductive slice 112 may have a facet width defined by two side edges (1121 and 1122) extending along the first axis A1, where the first axis A1 is substantially perpendicular to the second axis A2 in which thecoil 120 is wound. The facet width may be viewed as the thickness T of the respectiveconductive slice 112. In some embodiments, two opposingfacets 112 s, which are respectively proximal to and distal to theexterior wall 10 w of the plasma-generatingchamber 10, have approximately the same facet width. For example, the top surface or the bottom surface of the respectiveconductive slice 112 is formed in the shape of a rectangular (or square). In other embodiments, the opposingfacets 112 s have different facet widths. For example, the facet width of thefacet 112 s proximal to theexterior wall 10 w of the plasma-generatingchamber 10 is greater than the facet width of thefacet 112 s distal to theexterior wall 10 w of the plasma-generatingchamber 10. For example, the top surface or the bottom surface of the first type ofconductive slice 112 is formed in the shape of a trapezoid which is tapered in a direction away from theexterior wall 10 w of the plasma-generatingchamber 10. Alternatively, the facet width of thefacet 112 s distal to theexterior wall 10 w of the plasma-generatingchamber 10 is greater than the facet width of thefacet 112 s proximal to theexterior wall 10 w of the plasma-generatingchamber 10. For example, the top surface or the bottom surface of the respectiveconductive slice 112 is formed in the shape of a trapezoid which is tapered toward theexterior wall 10 w of the plasma-generatingchamber 10. - It is understood that the magnetic field intersecting the
shield 110 produces eddy currents, and the eddy currents may consume power which produces losses due to a resistance of theshield 110. For example, during operation, each of theconductive slices 112 including the side edges 1121 and 1122 forms therebetween an eddy current as indicated by arrow ED. It is appreciated that the eddy current losses of theshield 110 are proportional to the square of the thickness T of theshield 110. It follows from the eddy current loss formula that the reduction of the eddy current losses is effective if the thickness T of the respectiveconductive slice 112 is small. For example, losses due to eddy currents may be minimized by a discontinuous or sliced shield, thereby efficiently generating the magnetic fields. In some embodiments, the thickness T of the respectiveconductive slice 112 ranges from about 0.01 mm to about 10 mm. It should be noted that the thickness T of the respectiveconductive slice 112 may be selected depending on the technique(s) that is employed to fabricate theshield 110 and/or the process requirements of thesemiconductor processing apparatus 100. - In some embodiments, as shown in
FIG. 3B , theshield 110 includes different types of conductive slices (e.g., 112 a, 112 b, 112 c, and 112 d) which are separately arranged and extend out radially from the center of the plasma-generatingchamber 10. For example, one type of conductive slices (e.g., 112 a, 112 b, and 112 c) is of an approximately cuboid shape. In some embodiments, the first type of conductive slices (e.g., 112 a, 112 b, and 112 c) is of different lengths. For example, thefacet 112 s of the respectiveconductive slice 112 has a facet length defined by atop edge 1123 and abottom edge 1124 extending along the second axis A2 and connected to the side edges 1121 and 1122. The facet length may be viewed as the length L of the first type of conductive slices (e.g., 112 a, 112 b, and 112 c). In some embodiments, the first type of conductive slices (e.g., 112 a, 112 b, and 112 c) is of varying lengths. For example, theconductive slice 112 a located at the top of theshield 110 is shorter than theconductive slice 112 b located at the middle of theshield 110 and/or shorter than theconductive slice 112 c located at the bottom of theshield 110. In other embodiments, the lengths of the first type of conductive slices (e.g., 112 a, 112 b, and 112 c) are substantially the same or similar depending on the product requirements. It should be noted that the lengths L of theconductive slices 112 depend on the product requirement and construe no limitation in the disclosure. - In some embodiments, the
shield 110 includes another type of conductive slices (e.g., 112 d). For example, the respectiveconductive slice 112 d is of a cuboid shape having a recess. For example, the respectiveconductive slice 112 d includes theelongated facet 112 s proximal to theexterior wall 10 w of the plasma-generatingchamber 10 and more than onediscrete facet 112 s distal to theexterior wall 10 w of the plasma-generatingchamber 10. In some embodiments, theelongated facet 112 s and thediscrete facets 112 s of the respectiveconductive slice 112 d are opposite to one another and the facet width of theelongated facet 112 s may be substantially equal to the facet widths of thediscrete facets 112 s. Alternatively, the facet width of theelongated facet 112 s is different from the facet widths of thediscrete facets 112 s. For example, the facet width of theelongated facet 112 s proximal to theexterior wall 10 w of the plasma-generatingchamber 10 is greater than the facet widths of the respectivediscrete facets 112 s distal to theexterior wall 10 w of the plasma-generatingchamber 10. For example, the top surface or the bottom surface of the second type ofconductive slice 112 d is formed in the shape of a trapezoid which is tapered in a direction away from theexterior wall 10 w of the plasma-generatingchamber 10. Alternatively, the facet width of the respectivediscrete facet 112 s distal to theexterior wall 10 w of the plasma-generatingchamber 10 is greater than the facet width of theelongated facet 112 s proximal to theexterior wall 10 w of the plasma-generatingchamber 10. For example, the top surface or the bottom surface of the respectiveconductive slice 112 d is formed in the shape of a trapezoid which is tapered toward theexterior wall 10 w of the plasma-generatingchamber 10. The top surface or the bottom surface of the respectiveconductive slice 112 d may be tapered toward the same direction to the top surface or the bottom surface of the first type of the conductive slices (e.g., 112 a, 112 b, and 112 c). In other embodiments, the top surface or the bottom surface of the respectiveconductive slice 112 d may be tapered toward the opposing direction to the top surface or the bottom surface of the first type of the conductive slices (e.g., 112 a, 112 b, and 112 c). - In some embodiments, the first type of the conductive slices (112 a, 112 b, and 112 c) and the second type of the
conductive slice 112 d are of the same or similar thickness to facilitate producing a uniform magnetic field. The respectiveconductive slice 112 d may include an upper portion, a lower portion, and a middle portion connected to the upper portion and the lower portion. The upper portion of the respectiveconductive slice 112 d may have the same or similar shape(s) to theconductive slice 112 a located at the top of theshield 110, and the lower portion of the respectiveconductive slice 112 d may have the same or similar shape to theconductive slice 112 c located at the bottom of theshield 110. The middle portion of the respectiveconductive slice 112 d may be longer than theconductive slice 112 b located at the middle of theshield 110. In some embodiments, the conductive slices (112 a, 112 b, and 112 c) are separately arranged along the first axis A1, and the total length of the respectiveconductive slice 112 d is greater than the total length of the conductive slices (112 a, 112 b, and 112 c). The total length of theconductive slice 112 d may be considered as the height of theshield 110. - In some embodiments, the
conductive slice 112 d may be configured to adjoin with the conductive slices (112 a, 112 b, and 112 c). For example, theconductive slice 112 d is substantially parallel to the conductive slices (112 a, 112 b, and 112 c) which are discontinuously and vertically arranged. In an embodiment, the first type and the second type of theconductive slices 112 are alternately arranged along the circumference of the plasma-generatingchamber 10. In some embodiments, a group of the first types of theconductive slices 112 and a group of the second types of the conductive slices are configured in a repetitive arrangement, where the group of first types of the conductive slices includes the conductive slices (e.g., 112 a located at the top of the shield, 112 b located at the middle of the shield, and 112 c located at the bottom of the shield) separately arranged along the circumference of the plasma-generatingchamber 10, and the group of the second type of the conductive slices includes theconductive slices 112 d separately arranged along the circumference of the plasma-generatingchamber 10. Alternatively, the first type and the second type of theconductive slices 112 are arranged in non-repetitive patterns such as random patterns. - In some embodiments, a width (e.g., W and W′) of the first type of the conductive slices (e.g., 112 a, 112 b, and 112 c) is a distance of the
side edge 1125 extending along a third axis A3, where the third axis A3 is perpendicular to the first axis A1 and the second axis A2. In some embodiments, the conductive slices (e.g., 112 a and 112 c respectively located at the top and the bottom of the shield 110) are of the same or similar widths W. In some embodiments, the widths W of the conductive slices (112 a and 112 c) are greater than the width W′ of theconductive slice 112 b located at the middle of theshield 110. In some embodiments, the widths W of the conductive slices (112 a and 112 c) correspond to the widths of the upper portion and the lower portion of theconductive slice 112 d, and the width W′ of theconductive slice 112 b corresponds to the width of the middle portion of theconductive slice 112 d. It should be noted that the shape of the shield illustrated herein is an example. Theshield 110 may include more than two types of conductive slices or may include a single type (e.g., the first type, the second type, or other type) of the conductive slice. In addition, other shapes, sizes, and configurations of the conductive slices are possible as long as the eddy current loss is efficiently diminished in theshield 110. - Continue to
FIG. 3A ,FIG. 4 , andFIG. 5 , adjacentconductive slices 112 may be electrically isolated from one another. For example, two adjacentconductive slices 112 are spatially separated from one another. In some embodiment, every adjacent twoconductive slices 112 may define therebetween the respective gap G which is defined by thefirst edge 1121 of oneconductive slice 112 and thesecond edge 1122 of anotherconductive slice 112. For example, each of theconductive slices 112 separated from any other of theconductive slices 112 may avoid the generation of a large amount of eddy current on theconductive slices 112 so as to diminish the eddy current loss generated by theshield 110. It should be noted that the figures provided herein are not drawn to scale and are for illustrative purposes. In some embodiments, the gap G is less than the thickness T of the respectiveconductive slice 112. Alternatively, the gap G is greater than or substantially equal to the thickness T of theconductive slice 112. - In some embodiments, the gaps G are low conductivity areas which may restrict the flow of eddy currents in the
shield 110. For example, theshield 110 includes aspacer 114 formed in the gaps G to space apart every adjacent twoconductive slices 112. Theconductive slices 112 may be embedded in thespacer 114, and at least thefacets 112 s of theconductive slices 112 that face thecoil 120 may be exposed by thespacer 114. In some embodiments, thespacer 114 includes a plurality of spacer slices, and theconductive slices 112 and the spacer slices may be alternately arranged. The material of thespacer 114 may be either much less conductive than theconductive slice 112 or may be an insulator. The union of the plurality ofconductive slices 112 and thespacer 114 forms theshield 110. - For example, the material of the
spacer 114 includes plastic polymer, rubber, epoxy, ceramic, combination of these, any electrically insulating material, or the like. In some embodiments, the adjacentconductive slices 112 are joined by thespacer 114. For example, thespacer 114 includes adhesive material(s) which may be formed of a glue layer, a coated layer, a thin adhering film, or the like. A number of techniques may be employed alone or in conjunction to fabricate theshield 110. For example, theshield 110 may be fabricated by injection molding, three-dimensional (3D) printing, or any suitable techniques. In some embodiments in which injection molding is employed, theconductive slices 112 are pre-formed and inserted in a mold cavity (not shown) with an intended arrangement as mentioned above, and then the material ofspacer 114 is injected into the mold cavity to create the final integrated assembly of theshield 110. - In some embodiments, the cavity C1 is formed between the row of the
conductive slices 112 a at the top of theshield 110 and the row of theconductive slices 112 b at the middle of theshield 110. The cavity C2 may be or may not be also formed between the row of theconductive slices 112 c at the bottom of theshield 110 and the row of theconductive slices 112 b at the middle of theshield 110. The cavity (e.g., C1 and/or C2) may be air cavity or may be filled by an insulator. In other embodiments, the gap G and the cavities (C1 and C2) between any adjacent conductive slices (e.g., 112 a, 112 b, 112 c, and 112 d) are filled by thespacer 114 to create theshield 110 with integral outer surface. - In certain embodiments in which the
shield 110 having the cylindrical shape is surrounded by thecoil 120, theshield 110 may have an inner diameter Di that is large enough to process a semiconductor workpiece (e.g., a semiconductor wafer having about 300 mm diameters or having other dimension). The shield including conductive slices discontinuously arranged may be applied to an induced coupled plasma (ICP) tool or a transformer coupled plasma (TCP) reactor which is not limited thereto. It should be noted that the number, the shape, and the size ofconductive slices 112 and thespacer 114 may be varied to accommodate different process requirements. The shield shown herein is provided as an example and variations thereof may be carried out while still remaining within the scope of the disclosure. -
FIG. 6 is a schematic perspective view illustrating a shield of a semiconductor processing apparatus according to some embodiments of the present disclosure andFIG. 7 is a schematic view illustrating a shield including a casing and a block before assembled according to some embodiments of the present disclosure. - Referring to
FIG. 6 andFIG. 7 , ashield 210 adapted to be surrounded by the coil of the semiconductor processing apparatus is provided. The configuration of theshield 210 in the semiconductor processing apparatus may be similar to theshield 110 of thesemiconductor processing apparatus 100 as described above, so the detailed description is omitted for brevity. Theshield 210 may be referred to as a Faraday shield which plays an important role in improving the RF power efficiency for the semiconductor processing apparatus. For example, theshield 210 is designed to suppress or diminish eddy currents so as to avoid theshield 210 from generating eddy current losses. - In some embodiments, the
shield 210 includes acasing 212 and a plurality ofblocks 214 embedded in thecasing 212. For example, thecasing 212 includes anupper portion 212 a, alower portion 212 c, and a plurality ofmiddle portions 212 b respectively connected to theupper portion 212 a and thelower portion 212 c. In some embodiments, theupper portion 212 a and thelower portion 212 c are circular in shape, and themiddle portions 212 b are separately oriented along the circumferences of theupper portion 212 a and thelower portion 212 c. Alternatively, theupper portion 212 a and thelower portion 212 c may be any shape such as circular, square, rectangular, oval, etc. Theupper portion 212 a and thelower portion 212 c includes the same or similar conductive material including aluminum, iron, copper, silicon steel sheet, silver, gold, platinum, metallic alloys, combination of these, etc. - In some embodiments, the
middle portions 212 b are separately distributed around the middle of theshield 210. For example, adjacent two of themiddle portions 212 b are spatially apart from one another by a gap C3. The gaps C3 may be air gaps or filled by an insulator (not shown). In an embodiment, the respective gap C3 is formed as an approximately I-shaped gap between adjacent two of themiddle portions 212 b. The shape of the respective gap C3 may depend on the shape of the adjacentmiddle portions 212 b, which is not limited thereto. In some embodiments, thecoil 120 is wound around themiddle portions 212 b of theshield 210. For example, each of themiddle portions 212 b includes a middle frame b1 and at least two posts b2 respectively extending to be connected to theupper portion 212 a and thelower portion 212 c. The middle frames b1 of themiddle portions 212 b may be surrounded by thecoil 120. The middle frame b1 and the posts b2 may be integratedly formed and may include the same or similar conductive material including aluminum, iron, copper, silicon steel sheet, silver, gold, platinum, metallic alloys, combination of these, etc. - In some embodiments, one of the post b2 of the respective
middle portion 212 b is connected to the upper middle edge of the middle frame b1 and theupper portion 212 a, and the other one of the post b2 of the respectivemiddle portion 212 b is connected to the lower middle edge of the middle frame b1 and thelower portion 212 c. In other embodiments, more than two posts b2 are distributed at the upper edge (and/or the lower edge) of the middle frame b1. In some embodiments, the width b1 w of the middle frame b1 is substantially the same or similar to the width b2 w of the respective posts b2. Alternatively, the width b1 w of the middle frame b1 is greater than or less than the width b2 w of the respective posts b2. The width b1 w of the middle frame b1 and the width b2 w of the respective posts b2 are designed to suppress or minimize eddy currents within theshield 210. It should be noted that the number and the shape of the respective post b2 construe no limitation in the disclosure as long as the posts b2 can provide support to the middle frame b1 for connecting theupper portion 212 a and thelower portion 212 c. - The middle frame b1 may be provided with a window opening b1 a. In some embodiments, the middle frame b1 is a substantially rectangular middle frame with a hollow central section. It should be noted that the shape of each middle frame b1 of the respective
middle portion 212 b is not necessarily limited to rectangular, circular, elliptical, triangular, polygonal, or the like. In some embodiments, each of the plurality ofblocks 214 is held in place within one of the window openings b1 a of the respective middle frame b1 of themiddle portions 212 b. For example, therespective block 214 is complimentary in shape to the corresponding window opening b1 a of the middle frame b1. - In some embodiments, each of the
blocks 214 includes a plurality ofconductive slices 214 a discontinuously arranged aside one another. Theconductive slices 214 a may be separately arranged along a winding direction of thecoil 120 and overlap with thecoil 120. For example, theconductive slices 214 a are spaced and longitudinally extending segments surrounded by thecoil 120. The respective slice may be formed in the shape of a rectangular (or square). For example, theconductive slices 214 a are arranged side by side with a gap, and the respectiveconductive slice 214 a extends along the first axis A1 perpendicular to the second axis A2 in which thecoil 120 is wound. Theconductive slices 214 a may be any material or combination of materials provided which are conductive, such as aluminum, iron, copper, silicon steel sheet, silver, gold, platinum, metallic alloys, combination of these, or the like. In some embodiments, each of theconductive slices 214 a has afacet 214 s facing thecoil 120, and afacet width 214 sw of thefacet 214 s may be defined by two side edges (2141 and 2142) extending along the first axis A1. - In some embodiments, the
facet width 214 sw of the respectiveconductive slice 214 a is substantially the same or similar to the width b1 w of the middle frame b1. Alternatively, the width b1 w of the middle frame b1 is greater than or less than thefacet width 214 sw of theconductive slices 214 a. In some embodiments, thefacet widths 214 sw of theconductive slices 214 a are substantially uniform. For example, thefacet width 214 sw of the respectiveconductive slice 214 a ranges from about 0.01 mm to about 10 mm. It should be noted that thefacet widths 214 sw of theconductive slices 214 a may be adjusted depending on the technique(s) that is employed to fabricate theshield 210 and the process requirements of the semiconductor processing apparatus. The number of conductive slices, slice shapes, and slice sizes of the blocks may be varied as necessary to accommodate different semiconductor processing requirements. - In some embodiments, during operation, each of the
conductive slices 214 a including the side edges (2141 and 2142) forms therebetween an eddy current as indicated by arrow ED inFIG. 7 . It is understood that the eddy current losses of theshield 210 are proportional to the square of thefacet width 214 sw of theconductive slices 214 a. By dividing themiddle portions 212 b of theshield 210 intomultiple blocks 214 having sliced conductive material in the window openings b1 a of the middle frame b1, eddy current losses generated in theshield 210 by the RF power emitted by thecoil 120 may be minimized, thereby efficiently generating the magnetic fields and enhancing the RF power efficiency. The improved RF power efficiency may generate the plasma with higher density, thereby increasing the productivity and the yield of the semiconductor manufacturing process. - In some embodiments, the
respective block 214 includes aspacer 214 b disposed between adjacentconductive slices 214 a. In some embodiments, thespacers 214 b of theblocks 214 are made of material(s) which is much less conductive than theconductive slices 214 a to restrict the flow of eddy currents in themiddle portions 212 b of theshield 110. In some embodiments, thespacer 214 b includes plastic polymer, rubber, epoxy, ceramic, and combination of these or any electrically insulating material that may electrically isolate theconductive slices 214 a from one another. In some embodiments, the respectiveconductive slice 214 a is surrounded by thespacer 214 b. For example, theconductive slices 214 a are embedded in thespacer 214 b, and at least thefacets 214 s of theconductive slices 214 a that face thecoil 120 may be exposed by thespacer 214 b. The width of a portion of thespacer 214 b between adjacent two of theconductive slices 214 a may be less than thefacet width 214 sw of the respectiveconductive slice 214 a. In other embodiments, the width of a portion of thespacer 214 b between adjacentconductive slices 214 a is substantially equal to or greater than thefacet width 214 sw of the respectiveconductive slice 214 a. - For example, the
spacer 214 b at least covers the side edges (2141 and 2142) of the respectiveconductive slice 214 a. In some embodiments, the top and bottom edges (2143 and 2144) connected to the side edges (2141 and 2142) are also covered by thespacer 214 b so that theconductive slices 214 a inserted into the window openings b1 a is spaced apart from the corresponding middle frame b1. In an embodiment in which thespacer 214 b is made of an electrically insulating material, theconductive slices 214 a of therespective block 214 is electrically isolated from the corresponding middle frame b1. In some embodiments, thespacer 214 b is formed with a uniform width. In an embodiments, a portion of thespacer 214 b between the side edges of adjacentconductive slices 214 a is narrower than a portion of the spacer between the top edge (or the bottom edge) of the respectiveconductive slice 214 a and the middle frame b1. Alternatively, a portion of thespacer 214 b between the side edges of adjacentconductive slices 214 a is wider than a portion of the spacer between the top edge (or the bottom edge) of the respectiveconductive slice 214 a and the middle frame b1. - In some embodiments, the adjacent
conductive slices 214 a are joined by thespacer 214 b. For example, thespacer 214 b includes adhesive material(s) which may be formed of a glue layer, a coated layer, a thin adhering film, or the like. The material, the shape, and the size of the spacer may be varied as necessary to accommodate different semiconductor processing requirements. In some embodiments, thecasing 212 and theblocks 214 are separately formed. The window openings b1 a of the middle frames b1 may be formed of a shape substantially complementary to the shape of theblock 214. It should be noted that only oneblock 214 is shown inFIG. 7 for illustrative purposes. Once assembled, therespective block 214 is fit into the corresponding window opening b1 a of the middle frame b1, and thefacets 214 s of theconductive slices 214 a exposed by thespacer 214 b may face an inner peripheral surface of thecoil 120. In certain embodiments in which thespacer 214 b of therespective block 214 includes adhesive material(s) and wrapping around at least the edges of theconductive slices 214 a, so that therespective block 214 may be adhered to the middle frame b1 through thespacer 214 b. It should be noted that theblock 214 and thecasing 212 of theshield 210 shown inFIG. 7 is an illustrative examples and should not be considered as limiting to the disclosure. -
FIG. 8 is a schematic perspective view illustrating a shield of a semiconductor processing apparatus according to some embodiments of the present disclosure. Referring toFIG. 8 and also with reference toFIG. 6 , ashield 310 adapted to be surrounded by the coil of the semiconductor processing apparatus is provided. Theshield 310 may be referred to as a Faraday shield which plays an important role in improving the RF power efficiency for the semiconductor processing apparatus. For example, theshield 310 is designed to suppress or diminish eddy currents so as to avoid theshield 310 from generating eddy current losses. Theshield 310 in the semiconductor processing apparatus may be similar to theshield 210 described inFIG. 6 , so the detailed description is omitted for brevity. The difference between theshields middle portion 312 b. - For example, a plurality of
middle portions 312 b is respectively connected to theupper portion 212 a and thelower portion 212 c. In some embodiments, themiddle portions 312 b are separately distributed around the middle of theshield 310. For example, adjacent two of themiddle portions 312 b are spatially apart from one another by the gap C3. The gaps C3 may be air gaps or filled by an insulator (not shown). In an embodiment, the respective gap C3 is formed as an approximately I-shaped gap between adjacent two of themiddle portions 312 b. The shape of the respective gap C3 may depend on the shape of the adjacentmiddle portions 312 b, which is not limited thereto. In some embodiments, thecoil 120 is wound around themiddle portions 312 b of theshield 310. For example, each of themiddle portions 312 b includes a middle frame b1′ and at least two posts b2 respectively extending to be connected to theupper portion 212 a and thelower portion 212 c. The middle frames b1′ of themiddle portions 312 b may be surrounded by thecoil 120. The middle frame b1′ and the posts b2 may be integratedly formed and may include the same or similar conductive material including aluminum, iron, copper, silicon steel sheet, silver, gold, platinum, metallic alloys, combination of these, etc. - In some embodiments, the respective middle frame b1′ is provided with a plurality of conductive slices 3122 separately arranged along the widthwise direction (i.e. the second axis A2). For example, the respective conductive slice 3122 extends along in the lengthwise direction (i.e. the first axis A1). The conductive slices 3122 may be made of the same or similar conductive material as the middle frame b1′. For example, the conductive slices 3122 are integratedly formed with or secured to the middle frame b1′. In some embodiments, the conductive slices 3122 have the uniform dimension. In other embodiments, the conductive slices are of different dimensions as will be described later. It should be noted that the shapes of middle frame and the conductive slices are not necessarily limited to rectangular, circular, elliptical, triangular, polygonal, or the like. In some other embodiments, a single conductive slice 3122 is disposed on the middle frame b1′. It is also noted that the numbers of the conductive slices 3122 illustrated in
FIG. 8 is merely an example and construe no limitation in the disclosure. - In some embodiments, the middle frame b1′ and the conductive slice 3122 adjacent to the middle frame b1′ may be spaced apart from each other by a gap G1. The neighboring conductive slices 3122 may be spaced apart from one another by a gap G2. In some embodiments, the conductive slices 3122 are evenly distributed by the uniform gaps G1 and G2. In some other embodiments, the dimension of the gap G1 is greater than or less than that of the gap G2. In some embodiments, the
spacer 3126 fills the gaps G1 and G2 to laterally separate the neighboring conductive slices 3122 from one another and also separate the conductive slices 3122 from the middle frame b1′. For example, thespacer 3126 includes plastic polymer, rubber, epoxy, ceramic, combination of these, or other suitable electrically insulating material. Again, the configuration of themiddle portion 312 b illustrated inFIG. 8 is merely an example and may be adjusted depending on the product and process requirements. -
FIG. 9 is a schematic perspective view illustrating a shield of a semiconductor processing apparatus according to some embodiments of the present disclosure. Referring toFIG. 9 and also with reference toFIG. 8 , ashield 410 adapted to be surrounded by the coil of the semiconductor processing apparatus is provided. Theshield 410 may be referred to as a Faraday shield which plays an important role in improving the RF power efficiency for the semiconductor processing apparatus. For example, theshield 410 is designed to suppress or diminish eddy currents so as to avoid theshield 310 from generating eddy current losses. Theshield 410 in the semiconductor processing apparatus may be similar to theshield 310 described inFIG. 8 , so the detailed description is omitted for brevity. The difference between theshields middle portion 412 b. - The middle frames b1″ of the
middle portions 412 b may be surrounded by thecoil 120. The middle frame b1″ and the posts b2 may be integratedly formed and may include the same or similar conductive material including aluminum, iron, copper, silicon steel sheet, silver, gold, platinum, metallic alloys, combination of these, etc. In some embodiments, the respective middle frame b1″ is provided with a plurality of firstconductive slices 4122 and a plurality of secondconductive slices 4124 alternately and separately arranged along the widthwise direction (i.e. the second axis A2). For example, the respective firstconductive slice 4122 and the respective secondconductive slice 4124 extend along in the lengthwise direction (i.e. the first axis A1). The firstconductive slices 4122 and the secondconductive slices 4124 may be made of the same or similar conductive material as the middle frame b1′. For example, the firstconductive slices 4122 and the secondconductive slices 4124 are integratedly formed with or secured to the middle frame b1″. - In some embodiments, the first
conductive slices 4122 and the secondconductive slices 4124 have the same or similar lengths, while the widths 4122 w of the firstconductive slices 4122 are greater than the widths 4124 w of the secondconductive slices 4124. In other embodiments, the widths 4122 w of the firstconductive slices 4122 are substantially equal to or less than the widths 4124 w of the secondconductive slices 4124. It should be noted that the shapes of middle frame and the conductive slices are not necessarily limited to rectangular, circular, elliptical, triangular, polygonal, or the like. In some other embodiments, a single firstconductive slice 4122 and a single secondconductive slice 4124 may be separately disposed on the middle frame b1′. It is also noted that the numbers of the firstconductive slices 4122 and the secondconductive slices 4124 illustrated inFIG. 9 is merely an example and construe no limitation in the disclosure. - The middle frame b1″ and the second
conductive slice 4124 adjacent to the middle frame b1″ may be spaced apart from each other by a gap G1′, and the firstconductive slice 4122 and the secondconductive slice 4124 adjacent to the firstconductive slice 4122 may be spaced apart from each other by a gap G2′. In some embodiments, the dimension of the gap G1′ is greater than or substantially equal to that of the gap G2′. Alternatively, the dimension of the gap G1′ is less than that of the gap G2′. The gaps G1′ between the middle frames b1″ and the secondconductive slices 4124 may vary from one area to another. The gaps G2′ between the firstconductive slices 4122 and the secondconductive slices 4124 may also vary from one area to another. In some embodiments, thespacer 4126 fills the gaps G2′ to laterally separate the firstconductive slice 4122 from the adjacent secondconductive slice 4124. Thespacer 4126 may also fill the gaps G1′ between the middle frames b1′ and the secondconductive slices 4124. The material of thespacer 4126 may be similar to thespacer 3126 described inFIG. 8 . In some embodiments, the firstconductive slices 4122 are disposed aside the middle frame b1″, and the middle frame b1″ and the firstconductive slice 4122 adjacent to the middle frame b1″ may be spaced apart from each other by a gap. Under such scenario, thespacer 4126 may fill the gaps between the middle frames b1′ and the firstconductive slices 4122. Again, the configuration of themiddle portion 412 b illustrated inFIG. 9 is merely an example and may be adjusted depending on the product and process requirements. -
FIG. 10 is a schematic perspective view illustrating a shield of a semiconductor processing apparatus according to some embodiments of the present disclosure. Referring toFIG. 10 and also with reference toFIG. 3A , ashield 510 including a plurality of firstconductive slices 5112 and a plurality of secondconductive slices 5114 separately and alternately arranged is provided. Theshield 510 may be similar to theshield 110 described inFIG. 3A , so the detailed descriptions are not repeated for the sake of brevity. The difference between theshields conductive slice 5112 is different from that of the thickness of the respective secondconductive slice 5114. - For example, the thickness T1 of the respective first
conductive slice 5112 is greater than the thickness T2 of the respective secondconductive slice 5114. In some embodiments, the thickness T1 of the firstconductive slice 5112 is a few times or a hundred times greater than the thickness T2 of the secondconductive slice 5114. Alternatively, the thickness T1 of the firstconductive slice 5112 may be a thousand times greater than the thickness T2 of the secondconductive slice 5114. It is noted that the dimensions of the firstconductive slice 5112 and the secondconductive slice 5114 may vary depending on the product and process requirements. In some embodiments, a gap G′ is formed between the neighboring firstconductive slice 5112 and secondconductive slice 5114. For example, the firstconductive slices 5112 and the secondconductive slices 5114 are spaced apart from one another by the uniform gaps G′. In some embodiments, the gaps G′ vary from one area to another along the circumference of the plasma-generatingchamber 10. - In some embodiments, the
spacer 5116 is formed in the gaps G′ to physically separate the neighboring firstconductive slice 5112 and secondconductive slice 5114. In some embodiments, the firstconductive slices 5112 and the secondconductive slices 5114 are embedded in thespacer 5116, and at least the facets of the respective firstconductive slice 5112 and the respective secondconductive slice 5114 that face the coil may be exposed by thespacer 5116. In some embodiments, thespacer 5116 includes a plurality of spacer slices, and the conductive slices (e.g., 5112 and 5114) and the spacer slices are alternately arranged. The material of thespacer 5116 may be either much less conductive than the conductive slice or may be an insulator. In some embodiments, the material of thespacer 5116 is similar to thespacer 114 described inFIG. 3A . A number of techniques may be employed alone or in conjunction to fabricate theshield 510. For example, theshield 510 may be fabricated by injection molding, three-dimensional (3D) printing, or any suitable techniques. The union of the firstconductive slices 5112, the secondconductive slices 5114, and thespacer 5116 forms theshield 510. - According to some embodiments, a Faraday shield is provided. The Faraday shield includes a plurality of conductive slices and a spacer interposed between adjacent two of the conductive slices to electrically isolate the adjacent two of the conductive slices from one another. The conductive slices are separately arranged aside one another and oriented along a circumference of the Faraday shield. A coil is wound around the circumference of the Faraday shield.
- According to some alternative embodiments, a semiconductor processing apparatus is provided. The semiconductor processing apparatus includes a plasma-generating chamber adapted to generate plasma therein, a coil surrounding the plasma-generating chamber and coupled to a power source, and a shield interposed between the coil and the plasma-generating chamber. The shield includes a plurality of conductive slices discontinuously arranged along an exterior wall of the plasma-generating chamber.
- According to some alternative embodiments, an etching apparatus is provided. The etching apparatus includes a plasma-generating chamber adapted to generate plasma therein, a processing chamber disposed below the plasma-generating chamber and adapted to process a semiconductor workpiece, a shield disposed on an exterior wall of the plasma-generating chamber, and a coil coupled to a power source to supply a plasma-creating power. The shield includes a plurality of conductive slices arranged parallel to one another along the exterior wall of the plasma-generating chamber. The coil is wound around the conductive slices of the shield.
- The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.
Claims (20)
1. A semiconductor processing apparatus, comprising:
a plasma-generating chamber adapted to generate plasma therein;
a shield disposed on an exterior wall of the plasma-generating chamber and comprising:
a plurality of conductive slices separately arranged aside one another and oriented along a circumference of the shield; and
a spacer interposed between adjacent two of the plurality of conductive slices; and
a coil wound around the circumference of the shield.
2. The semiconductor processing apparatus of claim 1 , wherein the adjacent two of the plurality of conductive slices are electrically isolated from one another through the spacer.
3. The semiconductor processing apparatus of claim 1 , wherein the adjacent two of the plurality of conductive slices are adhered to one another through the spacer.
4. The semiconductor processing apparatus of claim 1 , wherein each of the plurality of conductive slices comprises a facet facing the coil, and a facet width of the facet is defined by two side edges of each of the plurality of conductive slices extending along a height direction of the shield.
5. The semiconductor processing apparatus of claim 1 , wherein the shield further comprises:
a casing provided with a window opening, the plurality of conductive slices and the spacer being disposed within the window opening of the casing.
6. The semiconductor processing apparatus of claim 5 , wherein the window of the casing is at a middle portion of the casing, and the coil overlaps the window.
7. A semiconductor processing apparatus, comprising:
a plasma-generating chamber adapted to generate plasma therein;
a coil wound around an exterior wall of the plasma-generating chamber and coupled to a power source; and
a shield interposed between the coil and the plasma-generating chamber and comprising:
a casing provided with a window opening; and
a plurality of conductive slices discontinuously arranged along a winding direction of the coil in the window opening.
8. The semiconductor processing apparatus of claim 7 , wherein the shield further comprises:
a spacer disposed between any adjacent two of the plurality of conductive slices to spaced apart any adjacent two of the plurality of conductive slices from one another along the winding direction of the coil.
9. The semiconductor processing apparatus of claim 8 , wherein the spacer comprises an adhesive material to adhere the any adjacent two of the plurality of conductive slices.
10. The semiconductor processing apparatus of claim 8 , wherein the plurality of conductive slices is electrically isolated from the casing by the spacer.
11. The semiconductor processing apparatus of claim 8 , wherein the spacer fills a first gap spacing apart the casing and one of the plurality of conductive slices adjacent to the casing, and a second gap spacing apart adjacent two of the plurality of conductive slices.
12. The semiconductor processing apparatus of claim 11 , wherein a dimension of the first gap is different from a dimension of the second gap.
13. The semiconductor processing apparatus of claim 7 , wherein each of the plurality of conductive slices of the shield comprises a facet facing the coil, and a length of the facet extends along a height direction of the shield.
14. An etching apparatus, comprising:
a plasma-generating chamber adapted to generate plasma therein;
a processing chamber disposed below the plasma-generating chamber and adapted to process a semiconductor workpiece;
a shield disposed on an exterior wall of the plasma-generating chamber and comprising:
a plurality of conductive slices arranged parallel to one another along the exterior wall of the plasma-generating chamber;
a casing provided with a window opening, the plurality of conductive slices separately disposed within the window opening; and
an insulating spacer provided with the window opening, wherein the plurality of conductive slices are separated from one another through the insulating spacer; and
a coil surrounding the plurality of conductive slices of the shield and coupled to a power source to supply a plasma-creating power.
15. The etching apparatus of claim 14 , wherein any adjacent two of the plurality of conductive slices are electrically isolated from one another through the insulating spacer.
16. The etching apparatus of claim 14 , wherein each of the plurality of conductive slices is surrounded by the insulating spacer.
17. The etching apparatus of claim 14 , wherein each of the plurality of conductive slices of the shield comprises a length extending along the exterior wall of the plasma-generating chamber and a width extending along a circumference of the plasma-generating chamber.
18. The etching apparatus of claim 14 , wherein each of the plurality of conductive slices of the shield comprises a facet exposed by the insulating spacer and facing an inner peripheral surface of the coil.
19. The etching apparatus of claim 14 , wherein the plurality of conductive slices comprises a plurality of first conductive slices and a plurality of second conductive slices alternately arranged within the window opening, and a width of the plurality of first conductive slices is different from a width of the plurality of second conductive slices.
20. The etching apparatus of claim 14 , wherein the plurality of conductive slices is made of the same conductive material as the casing.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US18/472,267 US20240014016A1 (en) | 2019-08-28 | 2023-09-22 | Semiconductor processing apparatus for generating plasma |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201962893131P | 2019-08-28 | 2019-08-28 | |
US16/928,008 US20210066054A1 (en) | 2019-08-28 | 2020-07-14 | Semiconductor processing apparatus for generating plasma |
US18/472,267 US20240014016A1 (en) | 2019-08-28 | 2023-09-22 | Semiconductor processing apparatus for generating plasma |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/928,008 Division US20210066054A1 (en) | 2019-08-28 | 2020-07-14 | Semiconductor processing apparatus for generating plasma |
Publications (1)
Publication Number | Publication Date |
---|---|
US20240014016A1 true US20240014016A1 (en) | 2024-01-11 |
Family
ID=74681739
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/928,008 Pending US20210066054A1 (en) | 2019-08-28 | 2020-07-14 | Semiconductor processing apparatus for generating plasma |
US18/472,267 Pending US20240014016A1 (en) | 2019-08-28 | 2023-09-22 | Semiconductor processing apparatus for generating plasma |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/928,008 Pending US20210066054A1 (en) | 2019-08-28 | 2020-07-14 | Semiconductor processing apparatus for generating plasma |
Country Status (3)
Country | Link |
---|---|
US (2) | US20210066054A1 (en) |
CN (1) | CN112447482A (en) |
TW (1) | TW202109593A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20220208527A1 (en) * | 2020-12-28 | 2022-06-30 | Mattson Technology, Inc. | Cooled Shield for ICP Source |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5449433A (en) * | 1994-02-14 | 1995-09-12 | Micron Semiconductor, Inc. | Use of a high density plasma source having an electrostatic shield for anisotropic polysilicon etching over topography |
JP4505145B2 (en) * | 1998-12-30 | 2010-07-21 | 東京エレクトロン株式会社 | Large area plasma source and chamber housing that encloses the plasma region within the large area plasma source |
US6685799B2 (en) * | 2001-03-14 | 2004-02-03 | Applied Materials Inc. | Variable efficiency faraday shield |
WO2003029513A1 (en) * | 2001-09-28 | 2003-04-10 | Tokyo Electron Limited | Hybrid plasma processing apparatus |
JP5642181B2 (en) * | 2009-08-21 | 2014-12-17 | マットソン テクノロジー インコーポレイテッドMattson Technology, Inc. | Substrate processing apparatus and substrate processing method |
JP5656458B2 (en) * | 2010-06-02 | 2015-01-21 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
JP5913829B2 (en) * | 2011-04-21 | 2016-04-27 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
WO2013099372A1 (en) * | 2011-12-27 | 2013-07-04 | キヤノンアネルバ株式会社 | Discharge vessel and plasma treatment device |
US11521828B2 (en) * | 2017-10-09 | 2022-12-06 | Applied Materials, Inc. | Inductively coupled plasma source |
-
2020
- 2020-07-14 US US16/928,008 patent/US20210066054A1/en active Pending
- 2020-08-26 CN CN202010869992.7A patent/CN112447482A/en active Pending
- 2020-08-26 TW TW109129023A patent/TW202109593A/en unknown
-
2023
- 2023-09-22 US US18/472,267 patent/US20240014016A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
CN112447482A (en) | 2021-03-05 |
TW202109593A (en) | 2021-03-01 |
US20210066054A1 (en) | 2021-03-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9305749B2 (en) | Methods of directing magnetic fields in a plasma source, and associated systems | |
US6028285A (en) | High density plasma source for semiconductor processing | |
JP5747231B2 (en) | Plasma generating apparatus and plasma processing apparatus | |
US7854213B2 (en) | Modulated gap segmented antenna for inductively-coupled plasma processing system | |
CN1197131C (en) | Plasma etching device using plasma confining device | |
JP3438696B2 (en) | Plasma processing method and apparatus | |
KR100752622B1 (en) | Apparatus for generating remote plasma | |
US5767628A (en) | Helicon plasma processing tool utilizing a ferromagnetic induction coil with an internal cooling channel | |
JP4904202B2 (en) | Plasma reactor | |
US8590485B2 (en) | Small form factor plasma source for high density wide ribbon ion beam generation | |
US20240014016A1 (en) | Semiconductor processing apparatus for generating plasma | |
JP2004214197A (en) | Induction coupled antenna, and plasma processing device using the same | |
EP1412963B1 (en) | Antenna arrangement and plasma processing apparatus with such an arrangement | |
JP2007110135A (en) | Plasma containment device and method for containing plasma | |
JP2007043148A (en) | Plasma etching system | |
KR19990037411A (en) | Semiconductor plasma processing apparatus | |
JP2005019412A (en) | Plasma source coil for generating plasma, and plasma chamber utilizing the same | |
KR20030090305A (en) | Exhaust baffle plate for plasma discharge device | |
CN111613513A (en) | Plasma etching device and method | |
TW201911977A (en) | Upper electrode element, reaction chamber and semiconductor processing device | |
KR100862685B1 (en) | Plasma reactor with multi-arrayed discharging chamber and plasma processing system using the same | |
KR100845917B1 (en) | Inductively coupled plasma reactor for wide area plasma processing | |
KR20080028848A (en) | Inductively coupled plasma reactor for wide area plasma processing | |
JPH11283926A (en) | Plasma processor | |
TW202133688A (en) | Plasma processing apparatuses including multiple electron sources |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |