CN118244584A - Method for improving photoresist residue in edge washing process - Google Patents
Method for improving photoresist residue in edge washing process Download PDFInfo
- Publication number
- CN118244584A CN118244584A CN202410466943.7A CN202410466943A CN118244584A CN 118244584 A CN118244584 A CN 118244584A CN 202410466943 A CN202410466943 A CN 202410466943A CN 118244584 A CN118244584 A CN 118244584A
- Authority
- CN
- China
- Prior art keywords
- edge
- wafer
- photoresist layer
- photoresist
- washing process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 76
- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000005406 washing Methods 0.000 title claims abstract description 27
- 238000004140 cleaning Methods 0.000 claims abstract description 29
- 239000000126 substance Substances 0.000 claims abstract description 15
- 238000007688 edging Methods 0.000 claims abstract description 13
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000009736 wetting Methods 0.000 claims description 3
- 239000002904 solvent Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a method for improving photoresist residue in an edge washing process, which comprises the steps of providing a wafer, forming a photoresist layer covering the surface of the wafer, and removing the photoresist layer at a position with a target width of n from the edge of the wafer; cleaning the photoresist layer at the position with the width of n1 from the edge of the wafer by using a chemical edging cleaning method, wherein n1 is less than n; cleaning the photoresist layer at the position with the width of n2 from the edge of the wafer by using a chemical edging cleaning method, so that the photosensitive agent component in the photoresist layer at the position is larger than the target dosage, wherein n1< n2< n; and removing the photoresist layer at the position with the width n from the edge of the wafer by using an edge exposure cleaning method. The invention can clean the photoresist at the edge of the wafer and avoid the photoresist residue.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for improving photoresist residues in an edge washing process.
Background
Photolithography is a critical process in semiconductor manufacturing. Photolithography uses photochemical reactions to transfer a pattern on a reticle to a wafer in preparation for selective etching and ion implantation.
During the photoresist coating process, excess photoresist is centrifugally pushed to the wafer edge, most of which is thrown off the wafer and a small amount remains at the wafer edge. Because the relative velocity of the wafer edge air flow is high, the residual glue can be quickly solidified to form a raised thick edge, and the subsequent cavity of the machine can be polluted if the machine is not cleaned. The current common approach is to clean the edge photoresist by chemical edge removal cleaning (EBR) and then more precisely control the edge cleaning range by edge exposure cleaning (WEE).
In order to ensure that the photoresist at the edge of the wafer can be cleaned by chemical edging, a chemical edging cleaning solvent is generally applied to the target edging width position for a long time, so that photosensitive components in the photoresist at the position are easily washed away by the edging solvent, the photoresist at the target edging position cannot be exposed (cannot be changed into a soluble state) during edge exposure, the photoresist at the target edging position remains, and a Block etch step is easily formed after etching.
In order to solve the above problems, a new method for improving photoresist residue in the edge washing process is needed.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a method for improving photoresist residue in an edge-washing process, which is used for solving the problems that in the prior art, a chemical edge-washing solvent acts on a target edge-washing width position for a long time, so that photosensitive components in photoresist at the position are easily washed out by the edge-washing solvent, cannot be exposed (cannot be changed into a soluble state) during edge exposure, photoresist residue at the target edge-washing position is caused, and Block etch steps are easily formed after etching.
To achieve the above and other related objects, the present invention provides a method for improving photoresist residue in an edge washing process, comprising:
Step one, providing a wafer, forming a photoresist layer covering the surface of the wafer, wherein the photoresist layer at the position with the target width n from the edge of the wafer needs to be removed;
Step two, cleaning the photoresist layer at the position with the width of n1 from the edge of the wafer by using a chemical edging cleaning method, wherein n1 is less than n;
Step three, cleaning the photoresist layer at the position with the width of n2 from the edge of the wafer by using a chemical edging cleaning method, so that the photosensitive agent component in the photoresist layer at the position is larger than the target dosage, wherein n1< n2< n;
and step four, removing the photoresist layer at the position with the width n from the edge of the wafer by using an edge exposure cleaning method.
Preferably, before forming the photoresist layer in the first step, the method further comprises pre-wetting the surface of the wafer.
Preferably, the photoresist layer in the first step is formed on a first surface of the wafer, where the first surface is a front surface of the wafer, and the front surface is opposite to a back surface of the wafer, and the front surface of the wafer is used for forming a device.
Preferably, in the first step, the photoresist layer is formed on the wafer by using a spin coating method.
Preferably, the target dose in step three is the minimum required amount of removal of the photoresist layer in an edge exposure rinse.
Preferably, the method for cleaning the edge by exposure in the fourth step includes: and fixing the wafer on a rotary platform, fixing a set of UV exposure lens and a grating above the edge of the wafer, enabling a UV light source to pass through the grating to generate uniform light spots, and then utilizing the rotation of the rotary platform to realize the edge exposure of the wafer.
Preferably, the method further comprises a step five of exposing and developing the photoresist layer after the edge washing is completed.
As described above, the method for improving photoresist residue in the edge washing process has the following beneficial effects:
the invention can clean the photoresist at the edge of the wafer and avoid the photoresist residue.
Drawings
FIG. 1 is a schematic illustration of the process flow of the present invention;
FIG. 2 is a schematic diagram of a photoresist layer formed on a wafer according to the present invention;
FIG. 3 is a schematic view of a first chemical edge-removal cleaning according to the present invention;
FIG. 4 is a schematic view of a second chemical edge-removal cleaning according to the present invention;
FIG. 5 is a schematic view of an edge exposure cleaning process according to the present invention.
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
Referring to fig. 1, the present invention provides a method for improving photoresist residue in an edge washing process, comprising:
step one, referring to fig. 2, a wafer 100 is provided, a photoresist layer 101 covering the surface of the wafer 100 is formed, and the photoresist layer 101 having a target width n from the edge of the wafer 100 needs to be removed;
In some embodiments, the first step further comprises pre-wetting the surface of the wafer 100 before forming the photoresist layer 101.
In some embodiments, the photoresist layer 101 in the first step is formed on a first surface of the wafer 100, where the first surface is a front surface of the wafer 100, and the front surface is opposite to a back surface of the wafer 100, and the front surface of the wafer 100 is used to form devices.
In some embodiments, a photoresist layer 101 is formed on the wafer 100 using spin coating in step one.
Step two, referring to fig. 3, a chemical edge-removing cleaning method is used to clean the photoresist layer 101 with a width n1 from the edge of the wafer 100, where n1< n;
that is, the photoresist is washed at a position smaller than the target edge washing width for a period of time, so that the problem that photosensitive components in the photoresist are easily washed away by the edge washing solvent at the position because the chemical edge washing solvent acts on the target edge washing width position for a long time is avoided.
Step three, cleaning the photoresist layer 101 with the width n2 from the edge of the wafer 100 by using a chemical edging cleaning method, so that the photosensitive agent component in the photoresist layer 101 is larger than the target dosage, wherein n1< n2< n; the photoresist at this point can be exposed (become soluble) at the later edge exposure, thereby avoiding photoresist residues at the target edge wash position.
In some embodiments, the target dose in step three is the minimum required amount of photoresist layer 101 to be removed in the edge exposure rinse.
In step four, referring to fig. 5, the photoresist layer 101 with a width n from the edge of the wafer 100 is removed by using an edge exposure cleaning method.
In some embodiments, the method of edge exposure cleaning in step four comprises: the wafer 100 is fixed (for example, vacuum adsorption or the like) on a rotating platform, a set of UV exposure lens and a grating are fixed above the edge of the wafer 100, a UV light source generates uniform light spots with a certain size through the grating, and then the edge exposure of the wafer 100 is realized by utilizing the rotation of the rotating platform.
In some embodiments, the method further includes a step five of exposing and developing the photoresist layer 101 after the edge washing is completed, and since there is no photoresist residue at the edge, a Block etch step is not formed after etching.
It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
In summary, the invention can clean the photoresist at the edge of the wafer and avoid the photoresist residue. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (7)
1. A method for improving photoresist residue in an edge washing process, comprising:
Step one, providing a wafer, forming a photoresist layer covering the surface of the wafer, wherein the photoresist layer at the position with the target width n from the edge of the wafer needs to be removed;
Step two, cleaning the photoresist layer at the position with the width of n1 from the edge of the wafer by using a chemical edging cleaning method, wherein n1 is less than n;
Step three, cleaning the photoresist layer at the position with the width of n2 from the edge of the wafer by using a chemical edging cleaning method, so that the photosensitive agent component in the photoresist layer at the position is larger than the target dosage, wherein n1< n2< n;
and step four, removing the photoresist layer at the position with the width n from the edge of the wafer by using an edge exposure cleaning method.
2. The method for improving photoresist residue in an edge washing process according to claim 1, wherein: the first step further comprises pre-wetting the surface of the wafer before forming the photoresist layer.
3. The method for improving photoresist residue in an edge washing process according to claim 1, wherein: the photoresist layer in the first step is formed on a first surface of the wafer, wherein the first surface is a front surface of the wafer, the front surface is opposite to a back surface of the wafer, and the front surface of the wafer is used for forming devices.
4. The method for improving photoresist residue in an edge washing process according to claim 1, wherein: and in the first step, the photoresist layer is formed on the wafer by using a spin coating method.
5. The method for improving photoresist residue in an edge washing process according to claim 1, wherein: the target dose in step three is the minimum required amount of photoresist layer removal in an edge exposure rinse.
6. The method for improving photoresist residue in an edge washing process according to claim 1, wherein: the method for cleaning the edge by exposure in the fourth step comprises the following steps: and fixing the wafer on a rotary platform, fixing a set of UV exposure lens and a grating above the edge of the wafer, enabling a UV light source to pass through the grating to generate uniform light spots, and then utilizing the rotation of the rotary platform to realize the edge exposure of the wafer.
7. The method for improving photoresist residue in an edge washing process according to claim 1, wherein: the method further comprises a fifth step of exposing and developing the photoresist layer after the edge washing is completed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410466943.7A CN118244584A (en) | 2024-04-18 | 2024-04-18 | Method for improving photoresist residue in edge washing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410466943.7A CN118244584A (en) | 2024-04-18 | 2024-04-18 | Method for improving photoresist residue in edge washing process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118244584A true CN118244584A (en) | 2024-06-25 |
Family
ID=91558322
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410466943.7A Pending CN118244584A (en) | 2024-04-18 | 2024-04-18 | Method for improving photoresist residue in edge washing process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN118244584A (en) |
-
2024
- 2024-04-18 CN CN202410466943.7A patent/CN118244584A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100801159B1 (en) | Immersion lithography edge bead removal | |
| US20210103220A1 (en) | Metal-Compound-Removing Solvent and Method in Lithography | |
| US20180040474A1 (en) | Metal-compound-removing solvent and method in lithography | |
| US20170205712A1 (en) | Development apparatus and method for developing photoresist layer on wafer using the same | |
| JP3475314B2 (en) | Method of forming resist pattern | |
| CN106876252B (en) | The lithographic method of semiconductor devices | |
| KR0171943B1 (en) | Micro-pattern forming method of semiconductor device | |
| CN118244584A (en) | Method for improving photoresist residue in edge washing process | |
| CN107918250B (en) | Photoresist trimming method and photoresist trimming machine in NTD (non-volatile memory) process | |
| KR100883808B1 (en) | Selective imaging through dual photoresist layers | |
| JPH03215867A (en) | Developing processing method for positive resist | |
| JP2010278204A (en) | Method for forming resist pattern | |
| JP3861851B2 (en) | Resist pattern forming method and semiconductor device manufacturing method | |
| US11769662B2 (en) | Method for reducing charging of semiconductor wafers | |
| JPS61188934A (en) | Method for preventing change of focusing point of projection aligner in photo etching | |
| JP2008517476A (en) | Dynamic development process using a pool of deionized water. | |
| KR20070013462A (en) | Apparatus for rinse liquid removing and method for forming of photo resist pattern using the same | |
| KR20050053244A (en) | Rinsing chuck for contamination removal | |
| KR20070071434A (en) | Manufacturing method of semiconductor device | |
| KR100641538B1 (en) | Developing method for fabricating semiconductor device | |
| CN116344330A (en) | Method for forming semiconductor device | |
| JPS61241745A (en) | Negative type photoresist composition and formation of resist pattern | |
| KR20230147295A (en) | Method for cleaning photo-resist particle on wafer | |
| KR100649014B1 (en) | Apparatus for rinsing resist residue | |
| KR19990035265A (en) | Development Method of Semiconductor Photosensitive Film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination |