CN118235248A - 用于辐射的位置分辨检测的辐射检测器 - Google Patents

用于辐射的位置分辨检测的辐射检测器 Download PDF

Info

Publication number
CN118235248A
CN118235248A CN202180103724.7A CN202180103724A CN118235248A CN 118235248 A CN118235248 A CN 118235248A CN 202180103724 A CN202180103724 A CN 202180103724A CN 118235248 A CN118235248 A CN 118235248A
Authority
CN
China
Prior art keywords
axis
along
extension
sensor
readout
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180103724.7A
Other languages
English (en)
Chinese (zh)
Inventor
M·里西
T·多纳特
C·迪施
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dexteris Ag
Original Assignee
Dexteris Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dexteris Ag filed Critical Dexteris Ag
Publication of CN118235248A publication Critical patent/CN118235248A/zh
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/809Constructional details of image sensors of hybrid image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/802Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027Geometry of the photosensitive area
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/811Interconnections

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
CN202180103724.7A 2021-12-23 2021-12-23 用于辐射的位置分辨检测的辐射检测器 Pending CN118235248A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2021/087538 WO2023117109A1 (en) 2021-12-23 2021-12-23 Radiation detector for position-resolved detection of radiation

Publications (1)

Publication Number Publication Date
CN118235248A true CN118235248A (zh) 2024-06-21

Family

ID=79686677

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180103724.7A Pending CN118235248A (zh) 2021-12-23 2021-12-23 用于辐射的位置分辨检测的辐射检测器

Country Status (5)

Country Link
US (1) US20240413184A1 (https=)
EP (1) EP4385067A1 (https=)
JP (1) JP2024544421A (https=)
CN (1) CN118235248A (https=)
WO (1) WO2023117109A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4394456A3 (en) * 2022-12-29 2024-07-10 FEI Company Improved detectors for microscopy

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100327173A1 (en) * 2009-06-29 2010-12-30 Charles Gerard Woychik Integrated Direct Conversion Detector Module
US20160099281A1 (en) * 2014-10-07 2016-04-07 Terapede Systems Inc. 3d high resolution x-ray sensor with integrated scintillator grid
US20160099277A1 (en) * 2014-10-07 2016-04-07 Terapede Systems Inc. 3d high resolution x-ray sensor with integrated scintillator grid
SE542767C2 (en) * 2018-05-15 2020-07-07 Xcounter Ab Sensor unit and radiation detector
EP4150380B1 (en) * 2020-05-13 2025-11-26 Dectris AG Radiation detector and method of manufacture thereof

Also Published As

Publication number Publication date
WO2023117109A1 (en) 2023-06-29
US20240413184A1 (en) 2024-12-12
EP4385067A1 (en) 2024-06-19
JP2024544421A (ja) 2024-11-29

Similar Documents

Publication Publication Date Title
US7872237B2 (en) Circuit substrate and method
KR101075626B1 (ko) 광검출 장치
US8269181B2 (en) Avalanche pixel sensors and related methods
EP1459384B1 (en) Sensor arrangement consisting of light-sensitive and/or x-ray sensitive sensors
US7579594B2 (en) Infrared radiation imager having sub-pixelization and detector interdigitation
CN112243536A (zh) 用3d-ic技术制造的基于事件的视觉传感器
KR101343733B1 (ko) 광 검출 시스템, 와이드 밴드갭 반도체 초점판 어레이 모듈및 실리콘 탄화물 픽셀 어레이 제조방법
EP4150380B1 (en) Radiation detector and method of manufacture thereof
CN118235248A (zh) 用于辐射的位置分辨检测的辐射检测器
JP7534743B2 (ja) 放射線撮像装置
KR102609264B1 (ko) 센서 유닛, 방사선 검출기 및 센서 유닛 제조 방법
US20090045502A1 (en) Chip scale package with through-vias that are selectively isolated or connected to the substrate
CN121367833A (zh) 具有减少的混合接合耦合的图像传感器
CN100483745C (zh) 电路基板、辐射检测器及其制造方法
EP4287258B1 (en) Photon counting detector
EP2665096B1 (en) A method of wafer-scale integration of semiconductor devices and semiconductor device
Lipton 3D Integration of Sensors and Electronics
EP3267484B1 (en) Sensor chip stack and method of producing a sensor chip stack
US20240418877A1 (en) Direct attach radiation detector structures having reduced cross-talk
US20240096784A1 (en) Extended via connect for pixel array
WO2019063473A1 (en) INTEGRATED RADIATION DETECTOR DEVICE
WO2025157410A1 (en) Radiation detector module
CN111033742A (zh) 用于检测电磁辐射的组件以及生产用于检测电磁辐射的组件的方法
TW202606523A (zh) 具有減少混合鍵耦合的影像感測器

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination