CN118231471A - ZrO based on preliminary heat treatment2Hafnium oxide-based ferroelectric device with intermediate layer and method for manufacturing the same - Google Patents
ZrO based on preliminary heat treatment2Hafnium oxide-based ferroelectric device with intermediate layer and method for manufacturing the same Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 229910000449 hafnium oxide Inorganic materials 0.000 claims abstract description 92
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims abstract description 92
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 29
- 239000010410 layer Substances 0.000 claims description 20
- 239000011229 interlayer Substances 0.000 claims description 19
- 238000000137 annealing Methods 0.000 claims description 18
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 229910052726 zirconium Inorganic materials 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 15
- 238000001259 photo etching Methods 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 238000000231 atomic layer deposition Methods 0.000 claims description 13
- 230000004913 activation Effects 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 10
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 238000001312 dry etching Methods 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052706 scandium Inorganic materials 0.000 claims description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- 230000010287 polarization Effects 0.000 abstract description 9
- 238000002360 preparation method Methods 0.000 abstract description 6
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 230000001965 increasing effect Effects 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005621 ferroelectricity Effects 0.000 description 3
- 238000000427 thin-film deposition Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Abstract
The invention relates to the field of hafnium oxide-based ferroelectric devices, in particular to a hafnium oxide-based ferroelectric device based on a ZrO 2 intermediate layer subjected to heat treatment in advance and a preparation method thereof. The hafnium oxide-based ferroelectric device based on the pre-heat-treated ZrO 2 intermediate layer comprises the following gate structure in sequence from bottom to top: the semiconductor device comprises a back electrode, a substrate, a pre-annealed ZrO 2 intermediate layer, a gate dielectric and a top electrode, wherein the gate dielectric is a hafnium oxide-based ferroelectric material. The pre-annealed ZrO 2 intermediate layer is a pre-heat treated ZrO 2 crystallized to form an o-phase. According to the invention, the pre-annealed ZrO 2 intermediate layer is introduced in the hafnium oxide based ferroelectric device process, so that the hafnium oxide based ferroelectric material can grow along o-phase ZrO 2 more easily, more ferroelectric phases are formed, and the hafnium oxide based gate dielectric is induced to generate larger remnant polarization intensity, so that the ferroelectric performance of the hafnium oxide based ferroelectric device is improved.
Description
Technical Field
The application relates to a hafnium oxide-based ferroelectric device, in particular to a hafnium oxide-based ferroelectric device based on a pre-heat-treated ZrO 2 intermediate layer and a preparation method thereof.
Background
One way to stabilize and improve the performance of hafnium oxide (HfO 2) based ferroelectric devices is to introduce various doping elements, including Si, al, zr, Y, sr, la and Gd, etc. By doping these elements, the ratio of the ferroelectric phase, i.e., the non-centrosymmetric orthogonal phase (o-phase, space group: pca 21), of the HfO 2 -based film is increased, thereby causing the HfO 2 -based film to exhibit a ferroelectric effect. The ferroelectricity of the hafnium oxide based ferroelectric device film can be improved by introducing a zirconium dioxide (ZrO 2) interface layer on the TiN or Si substrate. However, the use of a pre-annealing treatment to enhance the crystallinity of ZrO 2, and thus to promote the ferroelectricity of hafnium oxide-based ferroelectric devices, has never been systematically studied. The important role of the pre-annealing treatment of the ZrO 2 interlayer is recognized after the effect of the pre-annealed ZrO 2 interlayer (deposition only) and the pre-annealed ZrO 2 interlayer (pre-annealing) on the ferroelectricity of the hafnium-based ferroelectric device film is based on the comparison, namely that the pre-annealed ZrO 2 layer inhibits the monoclinic phase (m phase) and enhances the rhombohedral phase (o phase) of the hafnium-based ferroelectric device film. This finding provides a reliable explanation of the effect of the pre-annealed ZrO 2 layer on the ferroelectric properties of hafnium oxide based ferroelectric devices, and is of great importance for the optimisation of ferroelectric devices.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a hafnium oxide-based ferroelectric device based on a pre-heat-treated ZrO 2 intermediate layer and a preparation method thereof, and the invention uses the pre-annealed ZrO 2 intermediate layer as the core of the o-phase growth of a hafnium oxide-based ferroelectric film material, and aims to maximally improve the residual polarization intensity of the hafnium oxide-based ferroelectric film by changing process parameters under the condition of not increasing the total film thickness as much as possible, namely without increasing power consumption, thereby improving the memory window of the hafnium oxide-based ferroelectric device and further optimizing the performance of the hafnium oxide-based ferroelectric device.
The invention provides a hafnium oxide-based ferroelectric device based on a ZrO 2 intermediate layer subjected to heat treatment in advance, which comprises the following gate structures in sequence from bottom to top: the semiconductor device comprises a back electrode, a substrate, a pre-annealed ZrO 2 intermediate layer, a gate dielectric and a top electrode, wherein the gate dielectric is a hafnium oxide-based ferroelectric material.
Further, the pre-annealed ZrO 2 intermediate layer is a pre-heat treated ZrO 2 crystal to form an o-phase.
Further, the thickness of the pre-annealed ZrO 2 intermediate layer is 1 nm-4 nm.
Further, the gate dielectric is undoped hafnium oxide or hafnium oxide doped with at least one element of zirconium, silicon, germanium, aluminum, nitrogen, lanthanum, yttrium and scandium, and the thickness of the gate dielectric is 5 nm-20 nm.
Further, the grid medium is zirconium-doped hafnium oxide, and the doping concentration of zirconium element of the zirconium-doped hafnium oxide is 10% -80%.
Further, the grid medium is zirconium-doped hafnium oxide, and the doping concentration of zirconium element of the zirconium-doped hafnium oxide is 10% -80%.
The invention also provides a preparation method of the hafnium oxide based ferroelectric device based on the ZrO 2 intermediate layer subjected to the prior heat treatment, and a gate preparation process comprises the following steps:
(1) Performing pretreatment cleaning on the substrate by using a standard cleaning process, and performing thermal oxidation on the silicon wafer;
(2) Photoetching and etching to define an active region;
(3) Ion implantation and ion activation are carried out on the active region;
(4) Etching naturally formed and generated SiO 2 during ion activation;
(5) Performing ZrO 2 film deposition by using an atomic layer deposition device and annealing in an N 2 atmosphere;
(6) Depositing a hafnium oxide based thin film by using an atomic layer deposition device;
(7) Removing the hafnium oxide base film on the source and drain ends by using photoetching and dry etching modes;
(8) Growing W as a top electrode;
(9) Etching the top graph by photoetching, developing and plasma, and reserving a top electrode and a source-drain contact electrode to obtain a grid structure of a substrate-grid dielectric-top electrode;
(10) Annealing the deposited sample at 400-600 deg.c for 1-2 min;
(11) And depositing a back electrode of the substrate to obtain the hafnium oxide-based ferroelectric device with improved ferroelectric property.
Further, the atomic layer deposition equipment is used for depositing the ZrO 2 film, the thickness of the ZrO 2 film is 1 nm-4 nm, and the annealing temperature in the N 2 atmosphere is 300-500 ℃.
Further, the deposition of a ZrO 2 film was performed using an atomic layer deposition apparatus, the thickness of the ZrO 2 film was 2nm, and the annealing temperature was 400℃in an N 2 atmosphere.
Further, an atomic layer deposition device is used for depositing a hafnium oxide-based film, wherein the hafnium oxide-based film is zirconium-doped hafnium oxide, and the doping concentration of zirconium element of the zirconium-doped hafnium oxide is 10% -80%.
Compared with the prior art, the invention has the advantages that:
(1) The invention uses a pre-annealed ZrO 2 intermediate layer as the core of the o-phase growth of the hafnium oxide base ferroelectric film material, and aims to furthest improve the residual polarization intensity of the hafnium oxide base ferroelectric film by changing the technological parameters under the condition of not increasing the total film thickness as much as possible, namely not increasing the power consumption, thereby improving the memory window of the hafnium oxide base ferroelectric device and further optimizing the performance of the hafnium oxide base ferroelectric device.
(2) According to the invention, by introducing the pre-annealing ZrO 2 interlayer technology in the hafnium oxide based ferroelectric device process, the hafnium oxide based ferroelectric material is easier to grow along o-phase ZrO 2, so that more ferroelectric phases are formed, and the hafnium oxide based gate dielectric is induced to generate larger remnant polarization intensity, so that the ferroelectric performance of the hafnium oxide based ferroelectric device is improved.
Drawings
FIG. 1 is a schematic diagram of a hafnium oxide based ferroelectric device based on a pre-annealed ZrO 2 interlayer according to an embodiment of the present invention;
FIG. 2 is a flow chart of a back gate fabrication process for a hafnium oxide based ferroelectric device based on a pre-annealed ZrO 2 interlayer according to an embodiment of the present invention;
fig. 3 is a graph showing the remnant polarization intensity of a hafnium oxide based ferroelectric device based on a pre-annealed ZrO 2 intermediate layer according to example 2 of the present invention.
Fig. 4 is an output transfer characteristic of a hafnium oxide based ferroelectric device based on a pre-annealed ZrO 2 interlayer according to example 2 of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made more apparent and fully hereinafter with reference to the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art without making any inventive effort, are intended to be within the scope of the present patent.
Example 1
As shown in fig. 1, an embodiment of the present invention proposes a hafnium oxide based ferroelectric device based on a pre-heat treated ZrO 2 interlayer, the gate structure of which sequentially comprises, from bottom to top: the semiconductor device comprises a back electrode, a substrate, a pre-annealed ZrO 2 intermediate layer, a gate dielectric and a top electrode, wherein the gate dielectric is a hafnium oxide-based ferroelectric material.
The pre-annealed ZrO 2 intermediate layer of this embodiment is pre-heat treated ZrO 2 crystallized to form an o-phase, inducing the subsequently grown gate dielectric hafnium oxide based ferroelectric material to grow along the o-phase of ZrO 2, thereby creating more ferroelectric phase in the hafnium oxide based ferroelectric material resulting in enhanced ferroelectric properties.
Illustratively, the thickness of the pre-annealed ZrO 2 intermediate layer is 1 to 4nm, preferably 2nm.
Illustratively, the substrate comprises P-type or N-type silicon, germanium, silicon germanium.
Illustratively, the gate dielectric is undoped hafnium oxide or hafnium oxide doped with at least one element of zirconium, silicon, germanium, aluminum, nitrogen, lanthanum, yttrium, and scandium. Preferably, the grid dielectric adopts zirconium-doped hafnium oxide, the crystallization temperature of the zirconium-doped hafnium oxide is low, the doping concentration is moderate, the integration is facilitated, the doping concentration of zirconium element of the zirconium-doped hafnium oxide is 10% -80%, and the doping concentration range can enable the grid dielectric to have larger remnant polarization intensity and smaller leakage current.
Illustratively, the thickness of the gate dielectric is 5 nm-20 nm, and a larger remnant polarization strength can be achieved within the thickness range, so that the thinner size of the gate dielectric can be ensured, and the gate dielectric has better ferroelectric performance.
Illustratively, the top electrode is at least one of materials TiN, taN, W, cu, au, ni, pt, al.
Example 2
In another embodiment, as shown in fig. 2, a post gate fabrication process for improving a hafnium oxide based ferroelectric device based on a pre-annealed ZrO 2 interlayer is provided, wherein the substrate is P-type silicon, comprising the steps of:
(1) Performing pretreatment cleaning on the P-type silicon by using a standard cleaning process, and performing thermal oxidation (1100 ℃ for 4 hours) on the silicon wafer;
(2) Photoetching and etching to define an active region;
(3) Performing boron ion implantation and ion activation on the active region;
(4) Etching naturally formed and generated SiO 2 during ion activation;
(5) Depositing a 1nm ZrO 2 film by using an atomic layer deposition device and annealing at 300-500 ℃ in an N 2 atmosphere;
(6) Performing hafnium oxide-based thin film deposition with a zirconium element doping concentration of 50% at 10nm by using an atomic layer deposition device;
(7) Removing the hafnium oxide base film on the source and drain ends by using photoetching and dry etching modes;
(8) Growing 30nm W as a top electrode;
(9) Etching the top graph by photoetching, developing and plasma, and reserving a top electrode and a source-drain contact electrode to obtain a grid structure of a substrate-grid dielectric-top electrode;
(10) Annealing the deposited sample at 400-600 deg.c for 1-2 min;
(11) And depositing a back electrode of the substrate to obtain the hafnium oxide-based ferroelectric device with improved ferroelectric property.
Example 3
In another embodiment, as shown in fig. 2, a post gate fabrication process for improving a hafnium oxide based ferroelectric device based on a pre-annealed ZrO 2 interlayer is provided, wherein the substrate is P-type silicon, comprising the steps of:
(1) Performing pretreatment cleaning on the P-type silicon by using a standard cleaning process, and performing thermal oxidation (1100 ℃ for 4 hours) on the silicon wafer;
(2) Photoetching and etching to define an active region;
(3) Performing boron ion implantation and ion activation on the active region;
(4) Etching naturally formed and generated SiO 2 during ion activation;
(5) 2nm ZrO 2 film deposition is carried out by using an atomic layer deposition device, and annealing is carried out at 300-500 ℃ in the atmosphere of N 2;
(6) Performing hafnium oxide-based thin film deposition with a zirconium element doping concentration of 50% at 10nm by using an atomic layer deposition device;
(7) Removing the hafnium oxide base film on the source and drain ends by using photoetching and dry etching modes;
(8) Growing 30nm W as a top electrode;
(9) Etching the top graph by photoetching, developing and plasma, and reserving a top electrode and a source-drain contact electrode to obtain a grid structure of a substrate-grid dielectric-top electrode;
(10) Annealing the deposited sample at 400-600 deg.c for 0.5-1 min;
(11) And depositing a back electrode of the substrate to obtain the hafnium oxide-based ferroelectric device with improved ferroelectric property.
Example 4
In another embodiment, as shown in fig. 2, a post gate fabrication process for improving a hafnium oxide based ferroelectric device based on a pre-annealed ZrO 2 interlayer is provided, wherein the substrate is P-type silicon, comprising the steps of:
(1) Performing pretreatment cleaning on the P-type silicon by using a standard cleaning process, and performing thermal oxidation (1100 ℃ for 4 hours) on the silicon wafer;
(2) Photoetching and etching to define an active region;
(3) Performing boron ion implantation and ion activation on the active region;
(4) Etching naturally formed and generated SiO 2 during ion activation;
(5) Depositing a 4nm ZrO 2 film by using an atomic layer deposition device, and annealing at 400-500 ℃ in an N 2 atmosphere;
(6) Performing hafnium oxide-based thin film deposition with a zirconium element doping concentration of 50% at 10nm by using an atomic layer deposition device;
(7) Removing the hafnium oxide base film on the source and drain ends by using photoetching and dry etching modes;
(8) Growing 30nm W as a top electrode;
(9) Etching the top graph by photoetching, developing and plasma, and reserving a top electrode and a source-drain contact electrode to obtain a grid structure of a substrate-grid dielectric-top electrode;
(10) Annealing the deposited sample at 450-600 deg.c for 0.5-1 min;
(11) And depositing a back electrode of the substrate to obtain the hafnium oxide-based ferroelectric device with improved ferroelectric property.
Example 5
Fig. 3 is a graph showing the remnant polarization of a hafnium oxide based ferroelectric device based on a pre-annealed ZrO 2 interlayer according to example 2 of the present invention, wherein the remnant polarization is improved after the pre-annealed ZrO 2 interlayer is treated, which proves that the pre-annealed ZrO 2 interlayer improves the ferroelectric properties of the hafnium oxide based thin film.
Fig. 4 is a graph showing the output transfer characteristic of the hafnium oxide based ferroelectric device based on the pre-annealed ZrO 2 interlayer according to example 2 of the present invention, and it can be seen from the graph that the memory window is improved after the pre-annealed ZrO 2 interlayer technology treatment, which proves that the pre-annealed ZrO 2 interlayer improves the ferroelectric properties of the hafnium oxide based thin film.
Finally, it should be noted that the above embodiments are only for illustrating the technical solution of the present invention and not for limiting the scope of the present invention, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that the technical solution of the present invention may be modified or substituted without departing from the spirit and scope of the technical solution of the present invention.
Claims (10)
1. A hafnium oxide based ferroelectric device based on a pre-heat treated ZrO 2 interlayer, characterized in that its gate structure comprises, in order from bottom to top: the semiconductor device comprises a back electrode, a substrate, a pre-annealed ZrO 2 intermediate layer, a gate dielectric and a top electrode, wherein the gate dielectric is a hafnium oxide-based ferroelectric material.
2. The hafnium oxide based ferroelectric device according to claim 1, wherein said pre-annealed ZrO 2 intermediate layer is pre-heat treated ZrO 2 crystallized to form an o-phase.
3. The hafnium oxide based ferroelectric device according to claim 2, wherein said pre-annealed ZrO 2 intermediate layer has a thickness of 1nm to 4nm.
4. The hafnium oxide based ferroelectric device according to claim 1, wherein said gate dielectric is undoped hafnium oxide or hafnium oxide doped with at least one element of zirconium, silicon, germanium, aluminum, nitrogen, lanthanum, yttrium and scandium, and has a thickness of 5nm to 20nm.
5. The hafnium oxide based ferroelectric device according to claim 4, wherein said gate dielectric is zirconium doped hafnium oxide having a zirconium element doping concentration of 10% to 80%.
6. The hafnium oxide based ferroelectric device according to claim 1, wherein said gate dielectric is zirconium doped hafnium oxide having a zirconium element doping concentration of 10% to 80%.
7. A method for manufacturing a hafnium oxide based ferroelectric device based on a pre-heat treated ZrO 2 interlayer, characterized in that the gate manufacturing process thereafter comprises the steps of:
(1) Performing pretreatment cleaning on the substrate by using a standard cleaning process, and performing thermal oxidation on the silicon wafer;
(2) Photoetching and etching to define an active region;
(3) Ion implantation and ion activation are carried out on the active region;
(4) Etching naturally formed and generated SiO 2 during ion activation;
(5) Performing ZrO 2 film deposition by using an atomic layer deposition device and annealing in an N 2 atmosphere;
(6) Depositing a hafnium oxide based thin film by using an atomic layer deposition device;
(7) Removing the hafnium oxide base film on the source and drain ends by using photoetching and dry etching modes;
(8) Growing W as a top electrode;
(9) Etching the top graph by photoetching, developing and plasma, and reserving a top electrode and a source-drain contact electrode to obtain a grid structure of a substrate-grid dielectric-top electrode;
(10) Annealing the deposited sample at 400-600 deg.c for 1-2 min;
(11) And depositing a back electrode of the substrate to obtain the hafnium oxide-based ferroelectric device with improved ferroelectric property.
8. The method for producing a hafnium oxide based ferroelectric device according to claim 7, wherein the thickness of the ZrO 2 film is 1nm to 4nm, and the annealing temperature in the n 2 atmosphere is 300 to 500 ℃.
9. The method for producing a hafnium oxide based ferroelectric device according to claim 8, wherein the thickness of the ZrO 2 film is 2nm and the annealing temperature in the n 2 atmosphere is 400 ℃.
10. The method of manufacturing a hafnium oxide based ferroelectric device according to claim 7, wherein said hafnium oxide based thin film is zirconium doped hafnium oxide having a zirconium element doping concentration of 10% to 80%.
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