CN118209570A - Pollution test cleaning device and method - Google Patents
Pollution test cleaning device and method Download PDFInfo
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- CN118209570A CN118209570A CN202311774633.3A CN202311774633A CN118209570A CN 118209570 A CN118209570 A CN 118209570A CN 202311774633 A CN202311774633 A CN 202311774633A CN 118209570 A CN118209570 A CN 118209570A
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- 238000012360 testing method Methods 0.000 title claims abstract description 64
- 238000004140 cleaning Methods 0.000 title claims abstract description 62
- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000011109 contamination Methods 0.000 claims abstract description 45
- 238000001514 detection method Methods 0.000 claims abstract description 9
- 238000009792 diffusion process Methods 0.000 claims abstract description 9
- 239000000523 sample Substances 0.000 claims description 83
- 238000010894 electron beam technology Methods 0.000 claims description 56
- 238000005086 pumping Methods 0.000 claims description 40
- 239000003344 environmental pollutant Substances 0.000 claims description 15
- 231100000719 pollutant Toxicity 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 12
- 238000000605 extraction Methods 0.000 claims description 11
- 238000005259 measurement Methods 0.000 claims description 11
- 238000007872 degassing Methods 0.000 claims description 3
- 230000000087 stabilizing effect Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 114
- 230000000694 effects Effects 0.000 abstract description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052799 carbon Inorganic materials 0.000 abstract description 10
- 230000008021 deposition Effects 0.000 abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 4
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 abstract description 4
- 239000001301 oxygen Substances 0.000 abstract description 4
- 210000002381 plasma Anatomy 0.000 description 45
- 239000000203 mixture Substances 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010835 comparative analysis Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The invention relates to the technical field of detection and discloses a pollution test cleaning device and a pollution test cleaning method. The invention can test the carbon deposition effect of the carbon-containing polluted gas and the oxidation effect of the oxygen-containing polluted gas of the sample wafer, and analyze the diffusion behavior of the polluted gas; the sample wafer can be cleaned from contamination by injecting a gas plasma into the first vacuum chamber.
Description
Technical Field
The invention relates to the technical field of detection, in particular to a pollution test cleaning device and method.
Background
This section provides merely background information related to the present disclosure and is not necessarily prior art.
Due to the requirements of the lithography machine, spacecraft and other systems on long service life, high reliability, high performance and the like, some environmental factors can influence the performance of the system and even cause the failure of the system. Molecular contamination of gases is a major source of contamination for some lithographic machines and space vehicles, and can cause degradation of the performance of important parts, such as contamination deposited on thermally controlled surfaces, which can affect the emissivity and absorptivity of the surfaces; contamination is deposited on sensitive optical elements, which can reduce the reflectivity of the mirror or the transmissivity of the lens. Some researches indicate that the pollution effect is generated, the influence degree is indistinguishable from the composition of pollutants and the characteristics of the environment where the pollutants are positioned, and the effect of high-energy photons in the photoetching machine can even aggravate the gas pollution effect; meanwhile, sensitive optical elements of the photoetching machine have the characteristics of large quantity and high price, and on-line cleaning of the polluted optical elements is also a means for pollution control. How to control pollution and establish a corresponding experimental device for pollution test and cleaning is a problem to be solved urgently at present.
Disclosure of Invention
The invention aims to at least solve the problems of pollution test and cleaning of sensitive components of a photoetching machine, a spacecraft and the like. The aim is achieved by the following technical scheme:
a first aspect of the present invention proposes a pollution test cleaning apparatus comprising:
The vacuum chamber system comprises a first vacuum chamber, a second vacuum chamber, a control valve and an electron beam generating device, wherein the control valve is arranged between the first vacuum chamber and the second vacuum chamber and is used for controlling the first vacuum chamber to be communicated with or disconnected from the second vacuum chamber, the electron beam generating unit is arranged on the first vacuum chamber, a sample placing piece is arranged in the first vacuum chamber, and the sample placing piece is used for placing a sample wafer;
The vacuum air extraction system is respectively connected with the first vacuum chamber and the second vacuum chamber and is used for independently vacuumizing the first vacuum chamber and the second vacuum chamber;
the air inlet system comprises a first air inlet unit and a second air inlet unit which are connected with the first vacuum chamber, and a third air inlet unit which is connected with the first vacuum chamber and the second vacuum chamber, wherein the first air inlet unit is used for introducing pollution gas into the first vacuum chamber, the second air inlet unit is used for injecting gas plasma into the first vacuum chamber, and the third air inlet unit is used for introducing common gas or calibration gas into the first vacuum chamber or the second vacuum chamber;
The detection system comprises a measurement unit which is respectively connected with the first vacuum chamber and the second vacuum chamber, and the measurement unit is used for detecting and analyzing the sample wafer, the first vacuum chamber and the second vacuum chamber.
When the pollution test cleaning device is used for carrying out pollution test on the sample, the first air inlet unit is used for injecting pollution gas into the first vacuum chamber, and the electron beam generating unit is arranged to enable electron beams which generate certain energy and certain electron beam flow to bombard the sample, so that the high-energy photon effect of the photoetching machine can be simulated to carry out carbon deposition effect test of carbon-containing pollution gas of the sample and oxidation effect test of oxygen-containing pollution gas; after the control valve is opened to enable the first vacuum chamber to be communicated with the second vacuum chamber, the first air inlet unit is used for injecting the polluted air into the first vacuum chamber, the air flows from the first vacuum chamber to the second vacuum chamber and reaches dynamic balance, and then the measuring unit is used for comparing and analyzing the diffusion behavior of the polluted air. When cleaning the sample wafer or the vacuum chamber after the test is finished, injecting gas plasma into the first vacuum chamber through the second air inlet unit, reacting the gas plasma with pollutants on the surface of the sample wafer, forming new pollution products, and then extracting through the vacuum air extraction system, so that the sample wafer can be cleaned, and the vacuum chamber can be cleaned, thereby ensuring the repeated use of the device and the accuracy of the test.
In addition, the pollution test cleaning device according to the invention can also have the following additional technical features:
In some embodiments of the present invention, the electron beam generating unit is disposed obliquely above the first vacuum chamber, and is configured to generate an electron beam, and the electron beam bombards the sample wafer;
And/or a Faraday cup detector is arranged at the outlet of the electron beam.
In some embodiments of the invention, the vacuum chamber system further comprises an adjustable structure disposed between the first vacuum chamber and the second vacuum chamber, the control valve being disposed between the adjustable structure and the second vacuum chamber.
In some embodiments of the present invention, the measurement unit includes a vacuum gauge, a residual gas analyzer, and a plasma probe, the vacuum gauge and the residual gas analyzer are disposed on the first vacuum chamber and the second vacuum chamber, and the plasma probe is disposed on the first vacuum chamber.
In some embodiments of the present invention, the second air inlet unit includes a second air inlet pipe and a plasma emitter, and an outlet of the plasma emitter is provided with a pirani gauge for measuring a pressure of plasma exiting from the plasma emitter.
In some embodiments of the present invention, the air intake system further includes a gas cylinder assembly, the other ends of the first air intake unit, the second air intake unit and the third air intake unit are connected with the gas cylinder assembly, and the first air intake unit, the second air intake unit and the third air intake unit are provided with a gas flowmeter and a shutoff valve.
In some embodiments of the present invention, the vacuum pumping system includes a vacuum pumping assembly, the first vacuum chamber and the second vacuum chamber are respectively connected with the vacuum pumping assembly, the vacuum pumping assembly includes a backing pump and a main pumping pump, and a block valve is arranged between the main pumping pump and the first vacuum chamber and the second vacuum chamber.
In some embodiments of the present invention, heating units are respectively arranged at the outer sides of the first vacuum chamber and the second vacuum chamber, and the heating units are used for baking and degassing the first vacuum chamber and the second vacuum chamber.
In some embodiments of the invention, the contamination test cleaning apparatus further comprises a control system electrically connected to the electron beam generating unit, the vacuum pumping system, the air intake system and the detection system.
Another aspect of the present invention provides a contamination test cleaning method for a sample wafer, the contamination test cleaning method being applied to the contamination test cleaning apparatus as described in any one of the above for testing and cleaning, the contamination test cleaning method comprising
A contamination test step, the contamination test step comprising:
selecting a sample wafer and a polluted gas, and placing the sample wafer into the first vacuum chamber;
independently pumping extreme vacuum to the first vacuum chamber and the second vacuum chamber respectively to obtain clean extreme background vacuum respectively; recording the total pressure of the first vacuum chamber and the second vacuum chamber in real time, and the gas components and single gas partial pressure of the first vacuum chamber and the second vacuum chamber;
Maintaining online real-time records of gas components, single gas partial pressure and total pressure data of a measuring unit, opening the control valve to enable the first vacuum chamber to be communicated with the second vacuum chamber, injecting pollution gas into the first vacuum chamber through the first air inlet unit, and enabling the gas to flow from the first vacuum chamber to the second vacuum chamber and achieve dynamic balance;
after stabilizing for a period of time, respectively acquiring the gas components, the single gas partial pressure and the total pressure data of the first vacuum chamber and the second vacuum chamber after balancing on line through the measuring unit, comparing the gas components, the single gas partial pressure and the total pressure data with the gas components, the single gas partial pressure and the total pressure data before diffusing the polluted gas, and analyzing the diffusion behavior of the polluted gas;
The first air inlet unit is used for injecting pollution gas into the first vacuum chamber, the electron beam generating unit is turned on to bombard the sample wafer with electron beams, and after a period of time, the sample wafer is subjected to surface pollution analysis;
A contamination cleaning step, the contamination cleaning step comprising:
placing the polluted sample into the first vacuum chamber, and vacuumizing the first vacuum chamber to the limit;
And selecting a cleaning air source, injecting gas plasma into the first vacuum chamber through the second air inlet unit, reacting the gas plasma with pollutants on the surface of the sample wafer, forming new pollution products, and then pumping the new pollution products through the vacuum pumping system.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to designate like parts throughout the figures. In the drawings:
fig. 1 schematically shows a structural schematic view of a contamination test cleaning apparatus according to an embodiment of the present invention;
FIG. 2 schematically shows a flow diagram of test steps of a contamination test cleaning method according to an embodiment of the invention;
fig. 3 schematically shows a flow diagram of a cleaning step of a contamination test cleaning method according to an embodiment of the invention.
The reference numerals are as follows:
11. a first vacuum chamber; 12. a second vacuum chamber; 13. an electron beam generating unit; 14. a sample holder; 15. sample pieces; 16. an adjustable structural member; 17. a first block valve;
21. a first air extraction assembly; 22. a second air extraction assembly;
31. A first vacuum gauge; 32. a first residual gas analyzer; 33. a plasma probe; 34. a second residual gas analyzer; 35. a second vacuum gauge;
41. a gas cylinder assembly; 42. a first trim valve; 43. a first gas flow meter; 44. a second airflow meter; 45. a plasma emitter; 46. a second block valve; 47. a second trim valve; 48. a third block valve; 49. and a fourth block valve.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
It is to be understood that the terminology used herein is for the purpose of describing particular example embodiments only, and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. The terms "comprises," "comprising," "includes," "including," and "having" are inclusive and therefore specify the presence of stated features, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and/or groups thereof. The method steps, processes, and operations described herein are not to be construed as necessarily requiring their performance in the particular order described or illustrated, unless an order of performance is explicitly stated. It should also be appreciated that additional or alternative steps may be used.
Although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms may be only used to distinguish one element, component, region, layer or section from another region, layer or section. Terms such as "first," "second," and other numerical terms when used herein do not imply a sequence or order unless clearly indicated by the context. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the example embodiments.
For ease of description, spatially relative terms, such as "inner," "outer," "lower," "below," "upper," "above," and the like, may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. Such spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" or "over" the other elements or features. Accordingly, the example term "below … …" may include both upper and lower orientations.
The common gas molecular contamination in the lithography machine or spacecraft in the related art is C xHy and H 2 O. Although measures are taken to shield pollutants, some gas molecular pollutants are diffused into a chamber with a plurality of optical sensitive elements, and under the action of high-energy photons, the gas pollutants can have photodissociation or secondary electron desorption and the like, so that the pollution of the surface of an expensive optical lens which is difficult to repair is aggravated.
For the above reasons, the embodiment of the invention provides a pollution test cleaning device capable of carrying out pollution test and cleaning on a sample wafer.
As shown in fig. 1, according to an embodiment of the present invention, there is provided a pollution test cleaning apparatus, including a vacuum chamber system, a vacuum pumping system, an air intake system, a detection system and a control system, wherein the vacuum chamber system includes a first vacuum chamber 11, a second vacuum chamber 12, a control valve and an electron beam generating device, the control valve is disposed between the first vacuum chamber 11 and the second vacuum chamber 12, and is used for controlling the first vacuum chamber 11 to be connected to or disconnected from the second vacuum chamber 12, the electron beam generating unit 13 is disposed on the first vacuum chamber 11, a sample placement member is disposed in the first vacuum chamber 11, the sample placement member includes a sample holder 14, and the sample holder 14 is used for placing a sample 15. The vacuum pumping system is connected with the first vacuum chamber 11 and the second vacuum chamber 12 respectively, and is used for independently pumping vacuum to the first vacuum chamber 11 and the second vacuum chamber 12 respectively. The air inlet system comprises a first air inlet unit and a second air inlet unit which are communicated with the first vacuum chamber 11, and a third air inlet unit which is connected with the first vacuum chamber 11 and the second vacuum chamber 12, wherein the first air inlet unit is used for introducing pollution gas into the first vacuum chamber 11, the second air inlet unit is used for injecting gas plasma into the first vacuum chamber 11, and the third air inlet unit is used for introducing common high-purity gas or calibration gas into the first vacuum chamber 11 or the second vacuum chamber 12 and is used for vacuum protection or calibration of a vacuum measurement assembly when the first vacuum chamber 11 or the second vacuum chamber 12 is opened. The detection system comprises a measurement unit respectively connected with the first vacuum chamber 11 and the second vacuum chamber 12, and the measurement unit is used for detecting and analyzing the sample 15 and the vacuum chambers. The control system is electrically connected with the electron beam generating unit 13, the vacuum pumping system, the air inlet system and the detection system.
When the pollution test cleaning device is used for carrying out pollution test on the sample 15, the first air inlet unit is used for injecting pollution gas into the first vacuum chamber 11, and the electron beam generating unit 13 is arranged to enable electron beams which generate certain energy and certain electron beam flow to bombard the sample 15, so that the high-energy photon effect of a photoetching machine can be simulated to carry out carbon deposition effect test of carbon-containing pollution gas of the sample 15 and oxidation effect test of oxygen-containing pollution gas. After the control valve is opened to enable the first vacuum chamber 11 to be communicated with the second vacuum chamber 12, the first air inlet unit is used for injecting the polluted air into the first vacuum chamber 11, the air flows from the first vacuum chamber 11 to the second vacuum chamber 12 and reaches dynamic balance, and then the measuring unit is used for carrying out comparative analysis on the diffusion behavior of the polluted air. When cleaning sample 15 and vacuum chamber after the test is accomplished, inject gas plasma into first vacuum chamber 11 through the second unit that admits air, gas plasma reacts with the pollutant on sample 15 surface, takes out through vacuum pumping system after forming new pollution product, can realize sample 15's cleanness, also can realize vacuum chamber's cleanness to guarantee the used repeatedly of device, and guarantee the precision of test.
In some embodiments of the present invention, the vacuum chamber system further comprises an adjustable structure 16, the adjustable structure 16 being disposed between the first vacuum chamber 11 and the second vacuum chamber 12, and a control valve being further disposed between the adjustable structure 16 and the second vacuum chamber 12. Specifically, the first vacuum chamber 11 and the second vacuum chamber 12 are both in spherical structural design, the material is 316L stainless steel, an adjustable structural member 16 is arranged between the first vacuum chamber 11 and the second vacuum chamber 12, the adjustable structural member 16 can be a small hole flange structural member, a fixed conductance element or a dynamic gas lock and other structures, a control valve is arranged between the adjustable structural member 16 and the second vacuum chamber 12, the control valve comprises a first isolation valve 17, and the first isolation valve 17 can isolate and communicate the first vacuum chamber 11 and the second vacuum chamber 12.
In some embodiments of the present invention, the electron beam generating unit 13 is disposed obliquely above the first vacuum chamber 11, and the electron beam generating unit 13 is configured to generate an electron beam with a certain energy and a certain beam current, and the electron beam bombards the sample 15; and/or a Faraday cup detector is arranged at the outlet of the electron beam. Specifically, the sample 15 is provided on the sample holder 14, and the sample 15 may be a sample 15 of various materials, and preferably the sample 15 is an optical lens having a Mo/Si multilayer film or the like. The electron beam generating unit 13 bombards the sample wafer 15 with an electron beam at an oblique incidence, with an angle ranging from 35 ° to 55 ° (e.g., 35 ° or 40 ° or 55 ° or any value ranging from 35 ° to 55 °). The electron beam generating unit 13 emits a divergent electron beam, the beam spot size and the electron beam current of the electron beam are adjustable, the electron energy is adjustable, the range is 50eV-5KeV (for example, 50eV or 100eV or 5KeV or any value in the range of 50eV-5 KeV), the experimental preferred energy range is 200eV-300eV (for example, 200eV or 220eV or 300eV or any value in the range of 200eV-300 eV), and a faraday cup detector is arranged at the exit of the electron beam, and the faraday cup detector can measure the size of the emitted electron beam current and can cut off or open the electron beam as required. The electron beam generating unit 13 is electrically connected with a control system, the control system controls the opening and closing of the electron beam generating unit 13 and the electronic parameter selection, the data reading and recording of the devices are controlled, and the electron beam generating unit 13 can control the emergent electron beam current, electron energy and electron beam spot size through the control system.
In some embodiments of the present invention, the outside of the first vacuum chamber 11 and the second vacuum chamber 12 are provided with heating units, respectively, for performing bake-out deaeration of the first vacuum chamber 11 and the second vacuum chamber 12. Specifically, the heating unit includes a heating belt, the heating belt wraps the first vacuum chamber 11 and the second vacuum chamber 12, the heating belt can bake and degas the first vacuum chamber 11 and the second vacuum chamber 12, the heating unit is electrically connected with the control system, and the control system controls the baking and heating temperature of the heating unit to the first vacuum chamber 11 and the second vacuum chamber 12.
In some embodiments of the present invention, the vacuum pumping system comprises a vacuum pumping assembly, the first vacuum chamber 11 and the second vacuum chamber 12 are respectively connected with the respective vacuum pumping assemblies, the vacuum pumping assembly comprises a backing pump and a main pumping pump, and a block valve is arranged between the main pumping pump and the first vacuum chamber 11 and the second vacuum chamber 12. Specifically, the first vacuum chamber 11 is connected with a first air extraction component 21, the second vacuum chamber 12 is connected with a second air extraction component 22, the first air extraction component 21 and the second air extraction component 22 comprise a backing pump and a main pump, the backing pump and the main pump are electrically connected with a control system, and the control system controls the backing pump, the main pump and the isolation valve to be opened and closed. The forepump is an oil-free vortex vacuum pump, the main pump is an oil-free molecular pump, and the main pump is disconnected with the corresponding vacuum chamber through a block valve (not shown in the figure). The ultimate vacuum of the first vacuum chamber 11 and the second vacuum chamber 12 can reach 10 - 7 Pa through the first air pumping assembly 21 and the second air pumping assembly 22 respectively, and the background vacuum is clean vacuum. It should be noted that the second pumping assembly 22 may also include a cryopump or a getter pump to further maintain the limited cleaning vacuum, as desired for vacuum acquisition.
In some embodiments of the invention, the measurement unit comprises a vacuum gauge, a residual gas analyzer and a plasma probe, both the first vacuum chamber 11 and the second vacuum chamber 12 are provided with the vacuum gauge and the residual gas analyzer, and the first vacuum chamber 11 is also provided with the plasma probe 33. Specifically, a first vacuum gauge 31, a first residual gas analyzer 32 and a plasma probe 33 are arranged on the first vacuum chamber 11, the plasma probe 33 is used for detecting plasma parameters, one end of the plasma probe 33 is in contact with plasma in the first vacuum chamber 11, the other end of the plasma probe is connected with a control system outside the container through a vacuum electric interface, and the control system controls the opening and closing of the plasma probe 33 and the data reading and recording of the devices. The second vacuum chamber 12 is provided with a second vacuum gauge 35 and a second residual gas analyzer 34, the first vacuum gauge 31, the second vacuum gauge 35, the first residual gas analyzer 32 and the second residual gas analyzer 34 are electrically connected with a control system, the control system controls the opening and closing of the first vacuum gauge 31, the second vacuum gauge 35, the first residual gas analyzer 32 and the second residual gas analyzer 34, the first vacuum gauge 31 and the second vacuum gauge 35 are used for real-time monitoring or measuring of the pressure in the vacuum chamber, the composite gauge is a composite gauge of pirani and a cold cathode ionization gauge, the measuring range covers 10 -8Pa-105 Pa (for example, any value in the range of 10 -8 Pa or 10 2 Pa or 10 5 Pa or 10 -8Pa-105 Pa), and the mass number ranges of the first residual gas analyzer 32 and the second residual gas analyzer 34 are 1amu to 200amu (for example, any value in the range of 1amu to 100amu or 200amu or 1amu to 200 amu).
In some embodiments of the present invention, the second air intake unit includes a second air intake pipe and a plasma emitter 45, and an outlet of the plasma emitter 45 is provided with a pirani gauge for measuring a pressure of plasma emitted from the plasma emitter 45. Specifically, the plasma emitter 45 is disposed on the second air inlet pipe, the second air inlet unit and the electron beam generating unit 13 are symmetrically distributed about the first vacuum chamber 11, so that the gas plasma emitted from the plasma emitter 45 can act on the sample 15 or the whole inner wall surface of the first vacuum chamber 11, the plasma emitter 45 is electrically connected with a control system, the control system controls the opening and closing of the plasma emitter 45, the control system can control the power and flow of the emitted plasma, the plasma emitter 45 is an inductively coupled rf plasma generator, and the outlet of the rf plasma generator is provided with a pirani gauge for measuring the pressure of the emitted plasma. The second air inlet pipeline is further provided with a second airflow meter 44 and a second isolating valve 46 which are electrically connected with the control system, the second airflow meter 44 can not only finely adjust the air inflow but also accurately test the air inflow, and the second air inlet pipeline is used for injecting gas plasmas with known flow into the first vacuum chamber 11, wherein the gas can be Ar, N 2、H2、O2, air and the like.
In some embodiments of the present invention, the air intake system further includes a gas cylinder assembly 41, and the other ends of the first air intake unit, the second air intake unit, and the third air intake unit are connected to the gas cylinder assembly 41, and the second air intake unit and the third air intake unit are provided with a gas flow meter and a shutoff valve. Specifically, the first air intake unit includes a first air intake channel, a first air flow meter 43 and a third block valve 48, the first air flow meter 43 and the third block valve 48 are electrically connected with the control system, and the first air intake channel introduces a known flow of a pollutant gas including a carbon-containing pollutant gas and an oxygen-containing pollutant gas into the first vacuum chamber 11. The third air inlet unit comprises a third air inlet channel, a first fine tuning valve 42, a second fine tuning valve 47 and a fourth isolating valve 49 which are electrically connected with the control system are arranged on the third air inlet channel, the third air inlet channel is used for introducing dry high-purity N 2, ar or standard gas, and the third air inlet unit is used for vacuum protection or calibration of a vacuum measurement assembly when the first vacuum chamber 11 is opened. The gas cylinder assembly 41 comprises a plurality of high-pressure gas cylinders, and the gas cylinder assembly 41 can provide common N 2、Ar、H2、O2、CO2、CxHy、H2 O, standard gas, air and the like, can be used for preparing different high-pressure gas sources according to requirements and is depressurized to 1 atmosphere through a pressure reducing valve.
As shown in fig. 2 and 3, a second aspect of the present invention proposes a contamination test cleaning method applied to the contamination test cleaning apparatus as described above for performing a contamination test and cleaning of a sample 15, the contamination test cleaning method comprising:
A contamination test step, the contamination test step comprising:
s101: the sample 15 and the contaminated gas are selected and the sample 15 is placed in the first vacuum chamber 11. Specifically, a C xHy polluted gas or a H 2 O polluted gas was selected according to the test purpose, a mirror sample 15 having a Mo/Si multilayer film of an appropriate size was selected, and the sample 15 was placed in the first vacuum chamber 11.
S102: the first vacuum chamber 11 and the second vacuum chamber 12 are independently evacuated, and the gas composition, the single gas partial pressure, and the total pressure of the first vacuum chamber 11 and the second vacuum chamber 12 are measured on line in real time. The step is to obtain clean background vacuum, specifically, the first vacuum chamber 11 and the second vacuum chamber 12 are respectively and independently vacuumized, so that clean extreme background vacuum is respectively obtained; the total pressure of the first vacuum chamber 11 is acquired and recorded in real time by the first vacuum gauge 31, the total pressure of the second vacuum chamber 12 is acquired and recorded in real time by the second vacuum gauge 35, the gas composition and the single gas partial pressure of the first vacuum chamber 11 are acquired and recorded in real time by the first residual gas analyzer 32, and the gas composition and the single gas partial pressure of the second vacuum chamber 12 are acquired and recorded in real time by the second residual gas analyzer 34. The gas composition and partial pressure of the two vacuum chambers are analyzed, and if the cleaning vacuum is not satisfied, the heating unit is started as needed to bake and degas the first vacuum chamber 11 and the second vacuum chamber 12 until the cleaning vacuum is satisfied.
S103: and (3) online real-time recording of the gas components, the single gas partial pressure and the total pressure data of the measuring unit is kept, after the control valve is opened to enable the first vacuum chamber 11 to be communicated with the second vacuum chamber 12, the first air inlet unit is used for injecting polluted air into the first vacuum chamber 11, and the air flows from the first vacuum chamber 11 to the second vacuum chamber 12 through the adjustable structural member 16 and the control valve in sequence, so that dynamic balance is achieved. Specifically, the first vacuum chamber 11 is isolated from the first air pumping assembly 21, and the first vacuum chamber 11 and the second vacuum chamber 12 are communicated; the first air inlet channel is opened, so that the polluted air enters the first vacuum chamber 11 and enters the second vacuum chamber 12 through the adjustable structural member 16, and the polluted air is pumped away by the second air pumping assembly 22, so that the vacuum system achieves dynamic balance.
S104: and respectively acquiring the gas composition, the single gas partial pressure and the total pressure data after the balance of the first vacuum chamber 11 and the second vacuum chamber 12 on line through a measuring unit, and comparing the gas composition, the single gas partial pressure and the total pressure data before the diffusion of the polluted gas with each other to analyze the diffusion behavior of the polluted gas. This step is a contaminant gas diffusion behavior analysis.
S105: while the first air inlet unit is used for injecting the polluted air into the first vacuum chamber 11, the electron beam generating unit 13 is turned on to bombard the sample 15, and after a period of time, the surface pollution analysis can be performed on the sample 15. Specifically, after the contaminated gas is injected, the electron beam generating unit 13 is turned on to emit an electron beam of 250eV and high electron beam current, and irradiates the entire upper surface of the sample wafer 15. The carbon deposition or oxidation of the polluted gas and the surface of the sample 15 is carried out under the action of the electron beam, and after a period of time, the sample 15 can be taken out for surface pollution analysis, such as measuring the carbon deposition pollution thickness by using an ellipsometer, measuring the surface oxide layer thickness by using an electron microscope, and the like.
It should be noted that, when step 103 is modified as follows: maintaining the first vacuum chamber 11 in communication with the first pumping assembly 21, isolating the second vacuum chamber 12 from the second pumping assembly 22, which is subjected to the extreme vacuum, and opening the first air inlet channel to enable the polluted gas to enter the first vacuum chamber 11 and be pumped away by the first pumping assembly 21; after the dynamic balance is achieved, the first vacuum chamber 11 and the second vacuum chamber 12 are communicated, part of the polluted gas can be diffused into the second vacuum chamber 12, the system is balanced, and the diffusion behavior analysis of the polluted gas can be carried out after the step 104 is repeated. Then the electron beam generating unit 13 is turned on to emit electron beams with 250eV and high electron beam current to irradiate the upper surface of the whole sample 15, and the surface pollution analysis of the sample 15 can be carried out by repeating the step 105.
The cleaning method comprises the following steps:
S201: the contaminated coupon 15 is placed into the first vacuum chamber 11 and a final vacuum is drawn on the first vacuum chamber 11. Specifically, the sample 15 subjected to the pollution test or the sample 15 subjected to the pollution test is placed in the first vacuum chamber 11, the first vacuum chamber 11 and the second vacuum chamber 12 are blocked by the first blocking valve 17, the first air extraction assembly 21 is opened to vacuumize the first vacuum chamber 11, so that the ultimate background vacuum is obtained, and the pressure in the first vacuum chamber 11 is measured by the first vacuum gauge 31.
S202: a cleaning gas source is selected, gas plasma is injected into the first vacuum chamber 11 through the second gas inlet unit, the gas plasma reacts with pollutants on the surface of the sample 15, and new pollution products are formed and then pumped out through the vacuum pumping system. Specifically, a proper cleaning gas source is selected, a second gas inlet channel is opened, and gas plasma is injected into the first vacuum chamber 11, wherein the plasma performs physical or chemical action with pollutants on the surface of the sample 15, and part of generated new pollutants are carried away by the first air extraction assembly 21.
In this embodiment, the step of the cleaning method further includes a contamination cleaning test. Specifically, the sample 15 after the cleaning treatment is taken out, the thickness of carbon deposition pollution is measured by adopting an ellipsometer, and the microscopic structure and the element composition analysis of the surface of the sample 15 are carried out by combining an electron microscope, so that the pollution cleaning degree of the sample 15 can be represented. The contamination of the sample 15 is generally classified into cleanable contamination and non-cleanable contamination, and contamination that remains unremoved after cleaning of the contamination is non-cleanable contamination.
It should be noted that, after a long-time pollution test, the vacuum chamber may be polluted, and there are two methods for cleaning the vacuum chamber, namely, baking and degassing the vacuum chamber, and cleaning the vacuum chamber through the second air inlet channel, namely, injecting gas plasma into the vacuum chamber, or the combination of the two, thereby ensuring that the two vacuum chambers can obtain clean background vacuum again, further ensuring long-term use of the device, and simultaneously ensuring the accuracy of the test.
The present invention is not limited to the above-mentioned embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present invention are intended to be included in the scope of the present invention. Therefore, the protection scope of the invention is subject to the protection scope of the claims.
Claims (10)
1. A contamination test cleaning apparatus, comprising:
The vacuum chamber system comprises a first vacuum chamber, a second vacuum chamber, a control valve and an electron beam generating device, wherein the control valve is arranged between the first vacuum chamber and the second vacuum chamber and is used for controlling the first vacuum chamber to be communicated with or disconnected from the second vacuum chamber, the electron beam generating unit is arranged on the first vacuum chamber, a sample placing piece is arranged in the first vacuum chamber, and the sample placing piece is used for placing a sample wafer;
The vacuum air extraction system is respectively connected with the first vacuum chamber and the second vacuum chamber and is used for independently vacuumizing the first vacuum chamber and the second vacuum chamber;
The air inlet system comprises a first air inlet unit and a second air inlet unit which are communicated with the first vacuum chamber, and a third air inlet unit which is connected with the first vacuum chamber and the second vacuum chamber, wherein the first air inlet unit is used for introducing pollution gas into the first vacuum chamber, the second air inlet unit is used for injecting gas plasma into the first vacuum chamber, and the third air inlet unit is used for introducing common gas or calibration gas into the first vacuum chamber or the second vacuum chamber;
The detection system comprises a measurement unit which is respectively connected with the first vacuum chamber and the second vacuum chamber, and the measurement unit is used for detecting and analyzing the sample wafer, the first vacuum chamber and the second vacuum chamber.
2. The contamination test cleaning apparatus according to claim 1, wherein the electron beam generating unit is disposed obliquely above the first vacuum chamber, the electron beam generating unit being configured to generate an electron beam that bombards the specimen;
And/or a Faraday cup detector is arranged at the outlet of the electron beam.
3. The contamination test cleaning apparatus according to claim 1, wherein the vacuum chamber system further comprises an adjustable structure disposed between the first vacuum chamber and the second vacuum chamber, the control valve being disposed between the adjustable structure and the second vacuum chamber.
4. The contamination test cleaning apparatus of claim 1, wherein the measurement unit comprises a vacuum gauge, a residual gas analyzer, and a plasma probe, the vacuum gauge and the residual gas analyzer are both disposed on the first vacuum chamber and the second vacuum chamber, and the plasma probe is further disposed on the first vacuum chamber.
5. The pollution test cleaning device of claim 1, wherein the second air inlet unit comprises a second air inlet pipe and a plasma emitter, an outlet of the plasma emitter being provided with a pirani gauge for measuring a pressure of plasma emitted from the plasma emitter.
6. The pollution test cleaning device of claim 1, wherein the air intake system further comprises a gas cylinder assembly, the other ends of the first air intake unit, the second air intake unit and the third air intake unit are connected with the gas cylinder assembly, and the first air intake unit, the second air intake unit and the third air intake unit are provided with a gas flow meter and a shutoff valve.
7. The contamination test cleaning apparatus according to claim 1, wherein the vacuum pumping system comprises a vacuum pumping assembly, the first vacuum chamber and the second vacuum chamber are respectively connected with the vacuum pumping assembly, the vacuum pumping assembly comprises a backing pump and a main pumping pump, and a block valve is arranged between the main pumping pump and the first vacuum chamber and the second vacuum chamber.
8. The contamination test cleaning apparatus according to claim 1, wherein the outside of the first vacuum chamber and the second vacuum chamber are provided with heating units for bake-out and degasification of the first vacuum chamber and the second vacuum chamber, respectively.
9. The contamination test cleaning apparatus according to any one of claims 1 to 8, further comprising a control system electrically connected to the electron beam generating unit, the vacuum pumping system, the air intake system and the detection system.
10. A contamination test cleaning method applied to the contamination test cleaning apparatus according to any one of claims 1 to 9, the contamination test cleaning method comprising:
A contamination test step, the contamination test step comprising:
selecting a sample wafer and a polluted gas, and placing the sample wafer into the first vacuum chamber;
independently pumping extreme vacuum to the first vacuum chamber and the second vacuum chamber respectively to obtain clean extreme background vacuum respectively; recording the total pressure of the first vacuum chamber and the second vacuum chamber in real time, and the gas components and single gas partial pressure of the first vacuum chamber and the second vacuum chamber;
Maintaining online real-time records of gas components, single gas partial pressure and total pressure data of a measuring unit, opening the control valve to enable the first vacuum chamber to be communicated with the second vacuum chamber, injecting pollution gas into the first vacuum chamber through the first air inlet unit, and enabling the gas to flow from the first vacuum chamber to the second vacuum chamber and achieve dynamic balance;
after stabilizing for a period of time, respectively acquiring the gas components, the single gas partial pressure and the total pressure data of the first vacuum chamber and the second vacuum chamber after balancing on line through the measuring unit, comparing the gas components, the single gas partial pressure and the total pressure data with the gas components, the single gas partial pressure and the total pressure data before diffusing the polluted gas, and analyzing the diffusion behavior of the polluted gas;
The first air inlet unit is used for injecting pollution gas into the first vacuum chamber, the electron beam generating unit is turned on to bombard the sample wafer with electron beams, and after a period of time, the sample wafer is subjected to surface pollution analysis;
A contamination cleaning step, the contamination cleaning step comprising:
placing the polluted sample into the first vacuum chamber, and vacuumizing the first vacuum chamber to the limit;
And selecting a cleaning air source, injecting gas plasma into the first vacuum chamber through the second air inlet unit, reacting the gas plasma with pollutants on the surface of the sample wafer, forming new pollution products, and then pumping the new pollution products through the vacuum pumping system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202311774633.3A CN118209570A (en) | 2023-12-21 | 2023-12-21 | Pollution test cleaning device and method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311774633.3A CN118209570A (en) | 2023-12-21 | 2023-12-21 | Pollution test cleaning device and method |
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| CN118209570A true CN118209570A (en) | 2024-06-18 |
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| CN202311774633.3A Pending CN118209570A (en) | 2023-12-21 | 2023-12-21 | Pollution test cleaning device and method |
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| CN (1) | CN118209570A (en) |
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- 2023-12-21 CN CN202311774633.3A patent/CN118209570A/en active Pending
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