CN118169976A - Method for improving productivity of direct-writing photoetching machine based on arc reconstruction algorithm - Google Patents

Method for improving productivity of direct-writing photoetching machine based on arc reconstruction algorithm Download PDF

Info

Publication number
CN118169976A
CN118169976A CN202410299972.9A CN202410299972A CN118169976A CN 118169976 A CN118169976 A CN 118169976A CN 202410299972 A CN202410299972 A CN 202410299972A CN 118169976 A CN118169976 A CN 118169976A
Authority
CN
China
Prior art keywords
vertexes
polygon
vertex coordinates
coordinates
direct
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202410299972.9A
Other languages
Chinese (zh)
Inventor
王超
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hefei Xinqi Microelectronics Equipment Co ltd
Original Assignee
Hefei Xinqi Microelectronics Equipment Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hefei Xinqi Microelectronics Equipment Co ltd filed Critical Hefei Xinqi Microelectronics Equipment Co ltd
Priority to CN202410299972.9A priority Critical patent/CN118169976A/en
Publication of CN118169976A publication Critical patent/CN118169976A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

The invention discloses a capacity improving method of a direct-writing photoetching machine based on an arc reconstruction algorithm, which comprises the steps of obtaining and selecting four adjacent vertex coordinates, and then calculating vectors and vector products of the vertex coordinates; judging whether the coordinates of the four adjacent vertexes have inflection points or not, and screening the coordinates of the vertexes of the polygon according to the judging result; calculating whether an included angle formed by the selected coordinates of the four adjacent vertexes is larger than a preset angle threshold value or not, and obtaining a chord center distance; judging whether polygon vertex coordinates are reserved according to whether the obtained difference value between the chord center distance and the grid precision threshold is larger than 0 or not; and repeatedly executing the steps by iteratively updating the parameters of the coordinates of the four adjacent vertexes until all polygon vertexes are traversed, obtaining screened coordinate vertexes, and storing and applying the screened coordinate vertexes to data processing. According to the invention, the grid precision threshold is set, so that the number of the extracted polygon vertexes is properly reduced, and the extraction efficiency is improved on the premise of not influencing the exposure precision, thereby improving the productivity of the direct-writing photoetching machine.

Description

Method for improving productivity of direct-writing photoetching machine based on arc reconstruction algorithm
Technical Field
The invention relates to the technical field of graphic image processing of semiconductors, in particular to a direct-writing type photoetching machine productivity improving method based on an arc reconstruction algorithm.
Background
The direct writing type photoetching machine technology is a patterning technology for printing a characteristic on the surface of a photosensitive material (most of photoresist or film), and the maskless photoetching technology related to the invention uses a digital micro-mirror system to generate a pattern, and an image is projected onto a photosensitive substrate with a certain multiplying power through an optical projection element to generate the pattern of the characteristic.
Maskless lithography can effectively reduce complexity of a lithography system (without a mask table, mask transmission, simple frame structure) and processing and maintenance costs of a mask, and is one of development trends of performing large-size substrate lithography, and maskless lithography methods based on a spatial light Modulator (SPATIAL LIGHT Modulator, SLM) are increasingly used for manufacturing Printed Circuit Boards (PCBs), thin film liquid crystal panels (TFTs), micro Electro Mechanical Systems (MEMS) because of advantages of flexible manufacturing, high reliability, objective productivity and the like.
In order to ensure high resolution of data and minimum line width, the direct-writing lithography technology generally adopts a plurality of tightly-coordinated vertexes to manufacture a polygon, and the more the number of polygons in unit area is, the more the number of vector vertexes contained in unit area is, the data processing capacity is greatly increased, and the time for extracting the polygon vertexes consumes more time, so that the capacity of the direct-writing lithography machine is reduced.
At present, the data to be analyzed contains more vertex coordinate information, the current vertex coordinate extraction mode is to traverse all vertex coordinates and then process all data, but various current direct-writing photoetching machines have different resolving capacities, and cannot completely use all vertex coordinates, and particularly when the data contains dense circles or circular arcs, time is consumed for saving all vertex coordinates.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, and aims to achieve the purposes by adopting a direct-writing photoetching machine productivity improving method based on an arc reconstruction algorithm so as to solve the problems in the background art.
A direct-writing photoetching machine productivity improving method based on an arc reconstruction algorithm comprises the following steps:
S1, obtaining the number of polygon vertexes of a direct-writing photoetching machine, extracting polygon vertex coordinates, selecting four adjacent vertex coordinates, and calculating vectors and vector products of the vertex coordinates;
S2, judging whether inflection points exist in the adjacent four vertex coordinates according to the vector sum vector product of the calculated vertex coordinates, and screening polygon vertex coordinates according to a judging result;
s3, calculating whether an included angle formed by the coordinates of the selected four adjacent vertexes is larger than a preset angle threshold value, and fitting out a circle and related parameters according to the initial vertexes to obtain a chord center distance;
s4, judging whether to reserve polygon vertex coordinates according to whether the obtained difference value between the chord center distance and the grid precision threshold is larger than 0;
And S5, repeatedly executing the steps S1 to S4 by iteratively updating parameters of coordinates of four adjacent vertexes until all polygon vertex coordinates are traversed, obtaining screened coordinate vertexes, and storing and applying the screened coordinate vertexes to data processing.
As a further aspect of the invention: the specific steps in the step S1 include:
Obtaining the number of polygon vertexes of a direct-writing photoetching machine, extracting polygon vertex coordinates, and selecting adjacent four vertex coordinates 、/>、/>And/>
Respectively calculating vectorsVector/>Sum vectorThen respectively calculating the vector product/>, according to the calculated vectorsSum-vector product
If it isThen indicate/>、/>And/>The constructed path runs counterclockwise if the vector product/>Then indicate/>、/>And/>The constructed path runs clockwise if the vector product/>Then indicate/>、/>And/>The trend of the constructed path is unchanged, namely three points are on a straight line;
If the vector product Then indicate/>、/>And/>The constructed path runs counterclockwise if the vector product/>Then indicate/>、/>And/>The constructed path runs clockwise if the vector product/>Then indicate/>、/>And/>The trend of the constructed path is unchanged, namely three points are on a straight line;
Finally by calculating the vector product Judging/>、/>And/>Arc of formation and/>、/>And/>The direction of the arc center of the formed arc is consistent.
As a further aspect of the invention: the specific steps in the step S2 include:
If the vector product 0, Then represents/>、/>、/>And/>The four adjacent vertexes have no inflection point; if the vector product0, Then represents/>、/>、/>And/>The four adjacent vertexes have inflection points which are used as judging conditions for screening the coordinates of the vertexes of the polygon.
As a further aspect of the invention: the specific steps in the step S3 include:
Calculating coordinates of four adjacent vertexes ,/>,/>And/>,/>,/>Whether the formed included angle is larger than a given angle threshold value or not;
Respectively calculating 、/>And/>Sum of three-point straight line distances/>And/>、/>And/>Sum of three-point straight line distances/>
If it is>/>Then select/>、/>AndThe fitted circle center O, the circle radius R and the chord center distance PE;
Otherwise, select 、/>And/>The fitted circle center O, the circle radius R and the chord center distance PE; wherein/>Initial/>,/>Representing each time/>、/>、/>And/>After calculating an inflection point, will/>Assignment to/>
As a further aspect of the invention: the specific steps in the step S4 include:
And judging whether the difference value between the chord center distance PE and the grid precision threshold ThresholdValue is larger than 0 or not, and judging whether the polygon vertex coordinates are reserved or not.
As a further aspect of the invention: the specific steps in the step S5 include:
by iteratively updating parameters of adjacent four vertex coordinates And/>Repeating steps S1 to S4 until all polygon vertex coordinates are traversed;
through the steps, the polygon coordinate vertexes with reduced quantity are obtained through screening and applied to data processing, and under the condition that the storage lithography precision is unchanged, the productivity of the direct-writing lithography machine is increased.
Compared with the prior art, the invention has the following technical effects:
By adopting the technical scheme, the coordinate points meeting certain conditions are screened out according to the resolving power of different direct-writing type photoetching machines by setting the grid precision threshold, so that the number of the extracted polygon vertexes can be properly reduced, the efficiency of extracting the effective polygon coordinate vertexes is improved on the premise of not influencing the exposure precision, and the purpose of improving the production capacity of the direct-writing type photoetching machines is achieved. The design does not need to increase hardware cost, and can more efficiently improve data processing capacity.
Drawings
The following detailed description of specific embodiments of the invention refers to the accompanying drawings, in which:
FIG. 1 is a schematic diagram illustrating steps of a throughput enhancement method for a direct-write lithography machine according to an embodiment of the present disclosure;
Fig. 2 is a flowchart of an arc reconstruction algorithm according to an embodiment of the present disclosure.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1 and 2, in an embodiment of the invention, a method for improving throughput of a direct-writing lithography machine based on an arc reconstruction algorithm includes the following steps:
Step S1, obtaining the number of polygon vertexes of a direct-writing photoetching machine, extracting polygon vertex coordinates, selecting four adjacent vertex coordinates, and calculating vectors and vector products of the vertex coordinates, wherein the specific steps comprise:
Obtaining the number of polygon vertexes of a direct-writing photoetching machine, extracting polygon vertex coordinates, and selecting adjacent four vertex coordinates 、/>、/>And/>
Respectively calculating vectorsVector/>Sum vectorThen respectively calculating the vector product/>, according to the calculated vectorsSum-vector product
If the vector productThen indicate/>、/>And/>The constructed path runs counterclockwise if the vector product/>Then indicate/>、/>And/>The constructed path runs clockwise if the vector product/>Then indicate/>、/>And/>The trend of the constructed path is unchanged, namely three points are on a straight line;
If the vector product Then indicate/>、/>And/>The constructed path runs counterclockwise if the vector product/>Then indicate/>、/>And/>The constructed path runs clockwise if the vector product/>Then indicate/>、/>And/>The trend of the constructed path is unchanged, namely three points are on a straight line;
Finally by calculating the vector product Judging/>、/>And/>Arc of formation and/>、/>And/>The direction of the arc center of the formed arc is consistent.
In this embodiment, step S1 may determine that、/>、/>And/>Whether the directions of two arc centers formed by adjacent vertexes are consistent or not;
Step S2, judging whether inflection points exist in adjacent four vertex coordinates according to vectors and vector products of the calculated vertex coordinates, and screening polygon vertex coordinates according to judging results, wherein the specific steps comprise:
If the vector product 0, Then represents/>、/>、/>And/>The four adjacent vertexes have no inflection point; if the vector product0, Then represents/>、/>、/>And/>The four adjacent vertexes have inflection points which are used as judging conditions for screening the coordinates of the vertexes of the polygon.
Step S3, calculating whether an included angle formed by coordinates of four selected adjacent vertexes is larger than a preset angle threshold value, fitting out a circle and related parameters according to the initial vertexes, and obtaining a chord center distance, wherein the specific steps comprise:
Calculating coordinates of four adjacent vertexes ,/>,/>And/>,/>,/>Whether the formed included angle is larger than a given angle threshold value or not;
Respectively calculating 、/>And/>Sum of three-point straight line distances/>And/>、/>And/>Sum of three-point straight line distances/>
If it is>/>Then select/>、/>AndThe fitted circle center O, the circle radius R and the chord center distance PE;
Otherwise, select 、/>And/>The fitted circle center O, the circle radius R and the chord center distance PE; wherein/>Initial/>,/>Representing each time/>、/>、/>And/>After calculating an inflection point, will/>Assignment to/>
Specifically, dynamic angle thresholds are utilized to reduce the number of extracted polygon vertices.
Step S4, judging whether to reserve polygon vertex coordinates according to whether the obtained difference value between the chord center distance and the grid precision threshold is larger than 0, wherein the specific steps comprise:
And judging whether the difference value between the chord center distance PE and the grid precision threshold ThresholdValue is larger than 0 or not, and judging whether the polygon vertex coordinates are reserved or not.
Specifically, the universal applicability is increased, and the method can be rapidly and efficiently applied to all direct-writing type lithography machines according to the grid precision of different direct-writing type lithography machines on the premise of not increasing the hardware cost.
And S5, repeatedly executing the steps S1 to S4 by iteratively updating parameters of coordinates of four adjacent vertexes until all polygon vertexes are traversed, obtaining screened coordinate vertexes, storing and applying the screened coordinate vertexes to data processing, wherein the specific steps comprise:
by iteratively updating parameters of adjacent four vertex coordinates And/>Repeating steps S1 to S4 until all polygon vertex coordinates are traversed;
Through the steps, the polygon coordinate vertexes with reduced quantity are obtained through screening and applied to data processing, and under the condition that the photoetching precision is kept unchanged, the capacity of the direct-writing photoetching machine is increased through more efficient utilization of the data processing.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the spirit and scope of the invention as defined by the appended claims and their equivalents.

Claims (6)

1. A direct-writing type photoetching machine yield improving method based on an arc reconstruction algorithm is characterized by comprising the following steps of:
S1, obtaining the number of polygon vertexes of a direct-writing photoetching machine, extracting polygon vertex coordinates, selecting four adjacent vertex coordinates, and calculating vectors and vector products of the vertex coordinates;
S2, judging whether inflection points exist in the adjacent four vertex coordinates according to the vector sum vector product of the calculated vertex coordinates, and screening polygon vertex coordinates according to a judging result;
s3, calculating whether an included angle formed by the coordinates of the selected four adjacent vertexes is larger than a preset angle threshold value, and fitting out a circle and related parameters according to the initial vertexes to obtain a chord center distance;
s4, judging whether to reserve polygon vertex coordinates according to whether the obtained difference value between the chord center distance and the grid precision threshold is larger than 0;
And S5, repeatedly executing the steps S1 to S4 by iteratively updating parameters of coordinates of four adjacent vertexes until all polygon vertex coordinates are traversed, obtaining screened coordinate vertexes, and storing and applying the screened coordinate vertexes to data processing.
2. The method for improving throughput of direct-writing lithography machine according to claim 1, wherein the specific steps in step S1 include:
Obtaining the number of polygon vertexes of a direct-writing photoetching machine, extracting polygon vertex coordinates, and selecting adjacent four vertex coordinates 、/>、 />And/>
Respectively calculating vectorsVector/>Sum vectorThen respectively calculating the vector product/>, according to the calculated vectorsSum-vector product
If the vector productThen indicate/>、/>And/>The constructed path runs counterclockwise if the vector product/>Then indicate/>、/>And/>The constructed path runs clockwise if the vector product/>Then indicate/>、/>And/>The trend of the constructed path is unchanged, namely three points are on a straight line;
If the vector product Then indicate/>、/>And/>The constructed path runs counterclockwise if the vector product/>Then it means、/>And/>The constructed path runs clockwise if the vector product/>Then indicate/>、/>And/>The trend of the constructed path is unchanged, namely three points are on a straight line;
Finally by calculating the vector product Judging/>、/>And/>Arc of formation and/>、/>And/>The direction of the arc center of the formed arc is consistent.
3. The method for improving throughput of direct-writing lithography machine according to claim 1, wherein the specific steps in step S2 include:
If the vector product 0, Then represents/>、/>、/>And/>The four adjacent vertexes have no inflection point; if the vector product/>0, Then represents/>、/>、/>And/>The four adjacent vertexes have inflection points which are used as judging conditions for screening the coordinates of the vertexes of the polygon.
4. The method for improving throughput of direct-writing lithography machine according to claim 1, wherein the specific steps in step S3 include:
Calculating coordinates of four adjacent vertexes ,/>, />And, />,/>Whether the formed included angle is larger than a given angle threshold value or not;
Respectively calculating 、/>And/>Sum of three-point straight line distances/>And/>、/>And/>Sum of three-point straight line distances/>
If it is>/>Then select/>、/>And/>The fitted circle center O, the circle radius R and the chord center distance PE;
Otherwise, select 、/>And/>The fitted circle center O, the circle radius R and the chord center distance PE; wherein/>Initial/>,/>Representing each time/>、/>、/>And/>After calculating an inflection point, will/>Assignment to/>
5. The method for improving throughput of direct-writing lithography machine according to claim 1, wherein the specific steps in step S4 include:
And judging whether the difference value between the chord center distance PE and the grid precision threshold ThresholdValue is larger than 0 or not, and judging whether the polygon vertex coordinates are reserved or not.
6. The method for improving throughput of direct-writing lithography machine according to claim 1, wherein the specific steps in step S5 include:
by iteratively updating parameters of adjacent four vertex coordinates And/>Repeating steps S1 to S4 until all polygon vertex coordinates are traversed;
through the steps, the polygon coordinate vertexes with reduced quantity are obtained through screening and applied to data processing, and under the condition that the storage lithography precision is unchanged, the productivity of the direct-writing lithography machine is increased.
CN202410299972.9A 2024-03-15 2024-03-15 Method for improving productivity of direct-writing photoetching machine based on arc reconstruction algorithm Pending CN118169976A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202410299972.9A CN118169976A (en) 2024-03-15 2024-03-15 Method for improving productivity of direct-writing photoetching machine based on arc reconstruction algorithm

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202410299972.9A CN118169976A (en) 2024-03-15 2024-03-15 Method for improving productivity of direct-writing photoetching machine based on arc reconstruction algorithm

Publications (1)

Publication Number Publication Date
CN118169976A true CN118169976A (en) 2024-06-11

Family

ID=91349898

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202410299972.9A Pending CN118169976A (en) 2024-03-15 2024-03-15 Method for improving productivity of direct-writing photoetching machine based on arc reconstruction algorithm

Country Status (1)

Country Link
CN (1) CN118169976A (en)

Similar Documents

Publication Publication Date Title
US11340584B2 (en) Synchronized parallel tile computation for large area lithography simulation
US8015511B2 (en) Adjustment of mask shapes for improving printability of dense integrated circuit layout
US9671686B2 (en) Exposure methods using e-beams and methods of manufacturing masks and semiconductor devices therefrom
US6536032B1 (en) Method of processing exposure mask-pattern data, simulation using this method, and recording medium
US6765651B1 (en) Fast image simulation for photolithography
TW202213166A (en) Methods and systems for generating shape data for electronic designs
KR20220127004A (en) A stochastic contour prediction system, a method of providing a stochastic contour prediction system and a method of providing an EUV mask using the stochastic contour prediction system
US9372408B2 (en) Mask pattern generation method
TWI322953B (en) Optical proximity correction on hardware or software platforms with graphical processing units
CN118169976A (en) Method for improving productivity of direct-writing photoetching machine based on arc reconstruction algorithm
TW202131094A (en) Method of enhancing layout patterns
CN101943853A (en) Manufacture method of mask
US20230141388A1 (en) Device and method for generating photomasks
JP2008020734A (en) Design pattern preparation method for semiconductor device, program, and method of manufacturing the semiconductor device
US20230074316A1 (en) Mask process correction methods and methods of fabricating lithographic mask using the same
JP4631573B2 (en) Manufacturing method of density distribution mask
JP2008261922A (en) Method for creating pattern data of photomask for multiple exposure technique
JP4876299B2 (en) Photomask pattern data creation method
JP5245509B2 (en) Pattern data processing method and electronic device manufacturing method
CN113934115B (en) Method for controlling direct-writing type photoetching machine and direct-writing type photoetching machine
JP2000310851A (en) Sizing processing method for graphic data with opc pattern and sizing processing apparatus for graphic data with opc pattern
US8298732B2 (en) Exposure method and method of making a semiconductor device
CN117311080B (en) Method, device and medium for splitting layout pattern
JP2009058860A (en) Graphic pattern dividing method, and drawing device using the same, and photomask
CN116187256A (en) Grating calculation method of layout and full-chip simulation method

Legal Events

Date Code Title Description
PB01 Publication
SE01 Entry into force of request for substantive examination