CN118111584A - Application of gallium oxide material in temperature sensor and temperature sensor thereof - Google Patents
Application of gallium oxide material in temperature sensor and temperature sensor thereof Download PDFInfo
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- CN118111584A CN118111584A CN202410110171.3A CN202410110171A CN118111584A CN 118111584 A CN118111584 A CN 118111584A CN 202410110171 A CN202410110171 A CN 202410110171A CN 118111584 A CN118111584 A CN 118111584A
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- temperature sensor
- gallium oxide
- piezoelectric film
- substrate
- oxide piezoelectric
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 37
- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 37
- 239000000463 material Substances 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 229910003460 diamond Inorganic materials 0.000 claims description 5
- 239000010432 diamond Substances 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical group Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000010897 surface acoustic wave method Methods 0.000 description 3
- 244000198134 Agave sisalana Species 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Abstract
The invention discloses application of a gallium oxide material in a temperature sensor and the temperature sensor, relates to a temperature sensing technology, and provides a scheme for solving the problems that TCF and working wavelength cannot be considered in the prior art. The device comprises interdigital electrodes, gallium oxide piezoelectric films and a substrate which are sequentially stacked from top to bottom; the gallium oxide piezoelectric film is epsilon-phase material. The temperature sensor has the advantages that the characteristics of high TCF and high sound velocity are realized at the same time, so that the temperature sensor has high sensitivity. The piezoelectric film is directly grown on the substrate, and the process difficulty is low. Can operate in two acoustic modes.
Description
Technical Field
The invention relates to a temperature sensing technology, in particular to application of gallium oxide materials in a temperature sensor and the temperature sensor thereof.
Background
Surface acoustic wave devices have been in use in many fields for decades. They are widely used in the telecommunications industry to produce filters, delay lines and resonators, operating frequencies varying from tens of megahertz to several gigahertz. They are very sensitive to external temperatures and therefore can be applied in the field of temperature sensing. Compared with other temperature sensors, the surface acoustic wave temperature sensor has the advantages of small volume and passivity, and can work under extreme conditions.
The sensitivity of the surface acoustic wave temperature sensor mainly comprises two core parameters, namely a frequency temperature coefficient TCF of the material, and the sensitivity of the material to temperature change is determined; the other is the wave velocity of the material, which determines its operating frequency. The value of the product of TCF and operating frequency is equal to the sensitivity of the temperature sensor. In the common piezoelectric material, the TCF of 128 deg.Y-X lithium niobate is as high as-75 ppm/deg.C, but its wave speed is not high, only 3979m/s 1. The aluminum nitride/sapphire structure is a research material of a relatively popular temperature sensor, and because aluminum nitride and sapphire have similar wave speeds, high-order waveforms are difficult to excite, and the aluminum nitride/sapphire structure is usually operated in a Rayleigh wave mode. The Rayleigh wave composite sound velocity is as high as 5600m/s < 2 >, but the TCF of aluminum nitride itself is only-19 ppm/. Degree.C.3, and the reduction of the ratio of the thickness of the piezoelectric layer to the wavelength is required to achieve high TCF, which can certainly reduce the signal strength.
Direct energy epitaxy in materials of high acoustic velocity substrates generally suffers from the disadvantage of not having a high TCF. Materials that can be epitaxially grown on high acoustic speed substrates, such as aluminum nitride (TCF= -19ppm/°C) and gallium nitride (TCF= -26ppm/°C 4), require the use of high TCF substrates to enhance the TCF of the device as a whole. This will result in a small ratio of film thickness to wavelength, affecting the device signal. There is therefore a need in the art to develop new piezoelectric materials with higher acoustic speeds and higher TCFs to increase the sensitivity of the device and reduce the process difficulties.
Reference is made to:
[1]Liu,Bo,et al."Surface acoustic wave devices for sensor applications."Journal of semiconductors 37.2(2016):021001.
[2]Aubert,Thierry,et al."Investigations on AlN/sapphire piezoelectric bilayer structure for high-temperature SAW applications."IEEE transactions on ultrasonics,ferroelectrics,and frequency control 59.5(2012):999-1005.
[3]Bu,G.,et al."Temperature coefficient of SAW frequency in single crystal bulk AlN."Electronics letters 39.9(2003):1.
[4]Ai,Yujie,et al."GaN surface acoustic wave filter with low insertion loss."Ultrasonics 132(2023):106988.
Disclosure of Invention
The invention aims to provide an application of gallium oxide material in a temperature sensor and the temperature sensor thereof, so as to solve the problems in the prior art.
The temperature sensor of the present invention comprises: the interdigital electrode, the gallium oxide piezoelectric film and the substrate are sequentially stacked from top to bottom; the gallium oxide piezoelectric film is epsilon-phase material.
The sound wave transmission speed of the substrate is larger than that of the gallium oxide piezoelectric film.
The substrate is sapphire or silicon carbide or diamond.
The operating modes include a rayleigh mode and a cistile mode.
The gallium oxide piezoelectric film is directly grown on the substrate.
The thickness of the gallium oxide piezoelectric film is 200-5000 nm.
The thickness of the gallium oxide piezoelectric film is smaller than or equal to the working wavelength.
The thickness of the gallium oxide piezoelectric film is 0.1 to 1 time of the working wavelength.
The invention also provides application of the gallium oxide material in a temperature sensor, wherein the gallium oxide material is epsilon phase.
The gallium oxide material disclosed by the invention has the advantages that the application of the gallium oxide material in a temperature sensor and the temperature sensor thereof at least have the following three points: 1. meanwhile, the characteristics of high TCF and high sound velocity are realized, so that the temperature sensor has high sensitivity. 2. The piezoelectric film is directly grown on the substrate, and the process difficulty is low. 3. Can operate in two acoustic modes.
Drawings
Fig. 1 is a schematic view of a temperature sensor according to the present invention.
Fig. 2 is a return loss diagram of a temperature sensor in the first embodiment.
Fig. 3 is a schematic diagram showing changes of two modal resonance frequencies of the temperature sensor according to the first embodiment.
Fig. 4 is a schematic diagram showing changes of two modal resonance frequencies of the temperature sensor according to the second embodiment.
Fig. 5 is a schematic diagram showing changes of two modal resonance frequencies of the temperature sensor with temperature in the third embodiment.
Reference numerals: 11-substrate, 12-gallium oxide piezoelectric film, 13-interdigital electrode.
Detailed Description
The epsilon-phase gallium oxide material is used as the material of the piezoelectric film, so that the piezoelectric film is applied to a temperature sensor. The epsilon-phase gallium oxide has a sound velocity not high enough per se and a Rayleigh wave sound velocity of about 3260m/s, so that a person skilled in the art has no motivation to select the material to be applied to a temperature sensor before the present disclosure.
The structure of the temperature sensor is shown in fig. 1, and the interdigital electrode, the gallium oxide piezoelectric film and the substrate are sequentially stacked from top to bottom, wherein the gallium oxide piezoelectric film is epsilon-phase material. The sound wave transmission speed of the substrate is larger than that of the gallium oxide piezoelectric film. The operating modes include a rayleigh mode and a cistile mode. The gallium oxide piezoelectric film is directly grown on the substrate. The thickness of the gallium oxide piezoelectric film is 200-5000 nm. The thickness of the gallium oxide piezoelectric film is smaller than or equal to the working wavelength, and is specifically 0.1 to 1 time.
The present invention provides the following specific three examples for the choice of materials for the substrate.
Example 1
The substrate is made of sapphire. The effect is shown in fig. 2 and 3, the temperature sensor can be operated in rayleigh mode and in the sisal mode. Wherein, the Rayleigh wave resonant frequency is 1.404GHz, and the sound velocity is 3370m/s; the west Sha Wabo resonant frequency is 2.342GHz and the sound velocity is 5620m/s. The resonant frequency changes linearly with temperature, the TCF of Rayleigh wave is-70.9 ppm/DEG C, and the sensitivity is 99.5 kHz/DEG C; TCF of Sha Wabo is-73.0 ppm/DEG C, sensitivity is as high as 171.0 kHz/DEG C, and the temperature sensor for preparing epsilon-phase gallium oxide/sapphire structure has excellent performance.
Example two
The substrate is silicon carbide. As shown in fig. 4, the silicon carbide substrate has a small temperature coefficient of frequency and a large sound velocity compared with the sapphire substrate, and is suitable for being applied to high-frequency devices. The Rayleigh wave resonant frequency is 1.406GHz, the sound velocity is 3374m/s, the TCF is-51.6 ppm/DEG C, and the sensitivity is 72.5 kHz/DEG C; the resonance frequency of Sha Wabo is 2.404GHz, the sound velocity is 5769m/s, the TCF is-55.1 ppm/DEG C, and the sensitivity is as high as 132.5 kHz/DEG C.
Example III
The substrate is diamond. The effect is shown in fig. 5, in which the sound velocity of the diamond substrate is greater than that of the sapphire substrate and the silicon carbide substrate, and the diamond substrate is suitable for use in a higher frequency device. The Rayleigh wave resonant frequency is 1.505GHz, the sound velocity is 3612m/s, the TCF is-55.4 ppm/DEG C, and the sensitivity is 83.4 kHz/DEG C; the resonance frequency of Sha Wabo is 2.864GHz, the sound velocity is 6874m/s, the TCF is-54.7 ppm/DEG C, and the sensitivity is as high as 156.7 kHz/DEG C.
It will be apparent to those skilled in the art from this disclosure that various other changes and modifications can be made which are within the scope of the invention as defined in the appended claims.
Claims (9)
1. A temperature sensor, comprising: the interdigital electrode, the gallium oxide piezoelectric film and the substrate are sequentially stacked from top to bottom; the gallium oxide piezoelectric film is characterized in that the gallium oxide piezoelectric film is epsilon-phase material.
2. The temperature sensor of claim 1, wherein the substrate has a greater acoustic wave transmission rate than the gallium oxide piezoelectric film.
3. A temperature sensor according to claim 1, wherein the substrate is sapphire or silicon carbide or diamond.
4. The temperature sensor of claim 1, wherein the operating modes include a rayleigh mode and a cistile mode.
5. The temperature sensor of claim 1, wherein the gallium oxide piezoelectric film is grown directly on the substrate.
6. The temperature sensor of claim 1, wherein the gallium oxide piezoelectric film has a thickness of 200 to 5000nm.
7. The temperature sensor of claim 1, wherein the gallium oxide piezoelectric film has a thickness equal to or less than an operating wavelength.
8. The temperature sensor of claim 7, wherein the gallium oxide piezoelectric film thickness is 0.1 to 1 times the operating wavelength.
9. The use of a gallium oxide material in a temperature sensor, characterized in that the gallium oxide material is epsilon-phase.
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118111584A true CN118111584A (en) | 2024-05-31 |
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