CN113346858B - Surface acoustic wave device based on zinc borate single crystal and application of zinc borate single crystal - Google Patents
Surface acoustic wave device based on zinc borate single crystal and application of zinc borate single crystal Download PDFInfo
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- CN113346858B CN113346858B CN202110676300.1A CN202110676300A CN113346858B CN 113346858 B CN113346858 B CN 113346858B CN 202110676300 A CN202110676300 A CN 202110676300A CN 113346858 B CN113346858 B CN 113346858B
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- 239000013078 crystal Substances 0.000 title claims abstract description 86
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 51
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 239000011701 zinc Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 238000010008 shearing Methods 0.000 claims 1
- 239000010453 quartz Substances 0.000 abstract description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 25
- 238000005516 engineering process Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000026683 transduction Effects 0.000 description 2
- 238000010361 transduction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
- H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
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- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention discloses a surface acoustic wave device which comprises a piezoelectric substrate and a metal electrode manufactured on the surface of the piezoelectric substrate, wherein the piezoelectric substrate is a zinc borate single crystal substrate. Compared with a surface acoustic wave device taking a quartz crystal as a substrate, the surface acoustic wave device has higher frequency, a higher application temperature range and higher stability, and can solve the problem that the conventional piezoelectric crystal cannot meet the requirements of the high-frequency surface acoustic wave device in complex environments such as high temperature and the like. The invention also discloses application of the zinc borate single crystal in preparing surface acoustic wave devices.
Description
Technical Field
The invention relates to the technical field of surface acoustic waves. And more particularly, to a surface acoustic wave device based on a zinc borate single crystal and use of the zinc borate single crystal.
Background
The surface acoustic wave technology is a new technology developed in the sixties of the last century. The surface acoustic wave device mainly utilizes the piezoelectric effect and inverse piezoelectric effect of the piezoelectric crystal to complete the conversion of an electric signal, a mechanical wave signal and an electric signal, and realizes the functions of signal sensing, transduction, filtering and the like. The surface acoustic wave technology is used for modulating an electric signal by regulating and controlling the propagation of mechanical waves, has the characteristics of strong electromagnetic interference resistance, low processing difficulty, excellent frequency selectivity and the like, and is widely applied to the fields of electromagnetic remote sensing, communication technology, signal sensing and the like. For the core material of surface acoustic wave technology, piezoelectric crystal, is required to have large piezoelectric/inverse piezoelectric coefficient, wide piezoelectric temperature range, high acoustic velocity, and low temperature coefficient, so as to realize low loss, wide application temperature range, wide frequency spectrum range, and high temperature stability of the device. Quartz crystal is one of the most widely used piezoelectric crystals in surface acoustic wave technology, and has a longitudinal piezoelectric coefficient d112.31pm/V, shear piezoelectric coefficient d14The longitudinal wave speed is 3170m/s and the transverse wave speed is 5100m/s, which is 0.73 pm/V. The sound velocity of the quartz crystal is relatively low, and the limit frequency of the surface wave device manufactured by the quartz crystal is relatively low. And the phase change can occur at the temperature of 573 ℃, the piezoelectric coefficient of the high-temperature phase is almost zero, and the usable temperature range is limited below 573 ℃. In addition, quartz crystals belong to a space group of non-cubic phases, which have anisotropic physical properties, which also decrease their stability.
Disclosure of Invention
A first object of the present invention is to provide a surface acoustic wave device, which has a higher frequency, a higher application temperature range, and a higher stability than a surface acoustic wave device using a quartz crystal as a substrate, and can solve the problem that the conventional piezoelectric crystal cannot meet the requirements of a high-frequency surface acoustic wave device in a complex environment such as a high temperature environment.
The invention also aims to provide application of the zinc borate single crystal. The zinc borate single crystal has a shear piezoelectric coefficient (d) equivalent to that of a commercial quartz crystal14) Higher sound velocity, higher piezoelectric performance temperature range and higher thermal stability. Compared with quartz crystal, the surface acoustic wave device made of zinc borate crystal has higher frequency, higher application temperature range and higher stability, and can solve the problem that the conventional piezoelectric crystal cannot meet the requirements of high-frequency surface acoustic wave devices in complex environments such as high temperature and the like.
In order to achieve the first purpose, the invention adopts the following technical scheme:
a surface acoustic wave device comprises a piezoelectric substrate and a metal electrode manufactured on the surface of the piezoelectric substrate, wherein the piezoelectric substrate is a zinc borate single crystal substrate.
Furthermore, the chemical formula of the material zinc borate single crystal of the zinc borate single crystal substrate is Zn4B6O13The space group is I-43m, and the lattice constant is 7.47 angstroms.
Further, the zinc borate single crystal has isotropy.
Further, the shear piezoelectric coefficient of the zinc borate single crystal is d14＝0.65pm/V。
Further, the transverse wave sound velocity of the zinc borate single crystal is 7526 m/s.
Further, the longitudinal wave sound velocity of the zinc borate single crystal is 9889 m/s.
Further, the piezoelectric phase temperature of the zinc borate single crystal is-273-1000 ℃.
Further, the metal electrodes are interdigital electrodes. The interdigital electrodes are two groups of mutually interlaced and periodically distributed comb-shaped metal strips deposited on a zinc borate piezoelectric substrate and are used for exciting and detecting surface acoustic waves.
In order to achieve the second purpose, the invention adopts the following technical scheme:
the application of the zinc borate single crystal as a piezoelectric substrate for preparing a surface acoustic wave device comprises the piezoelectric substrate and a metal electrode manufactured on the surface of the piezoelectric substrate.
Furthermore, the chemical formula of the material zinc borate single crystal of the zinc borate single crystal substrate is Zn4B6O13The space group is I-43m, and the lattice constant is 7.47 angstroms.
Further, the zinc borate single crystal has isotropy.
Further, the shear piezoelectric coefficient of the zinc borate single crystal is d14＝0.65pm/V。
Further, the transverse sound velocity of the zinc borate single crystal is 7526 m/s.
Further, the longitudinal wave sound velocity of the zinc borate single crystal is 9889 m/s.
Further, the piezoelectric phase temperature of the zinc borate single crystal is-273-1000 ℃.
Further, the metal electrodes are interdigital electrodes.
The invention has the following beneficial effects:
compared with a surface acoustic wave device adopting a quartz substrate, the surface acoustic wave device provided by the invention has higher frequency, a higher application temperature range and higher stability, and can solve the problem that the conventional piezoelectric crystal cannot meet the requirements of high-frequency surface acoustic wave devices in complex environments such as high temperature and the like.
Drawings
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.
Fig. 1 shows a schematic structural view of a surface acoustic wave filter prepared in the present invention.
Fig. 2 shows a schematic structural diagram of a surface acoustic resonator prepared in the present invention.
Fig. 3 shows a schematic structural diagram of a surface acoustic wave delay line prepared in the present invention.
Detailed Description
In order to more clearly illustrate the invention, the invention is further described below with reference to preferred embodiments and the accompanying drawings. Similar parts in the figures are denoted by the same reference numerals. It is to be understood by persons skilled in the art that the following detailed description is illustrative and not restrictive, and is not to be taken as limiting the scope of the invention.
Zn in the invention4B6O13The crystals can be prepared from a number of documents which are known per se, for example from Near-Zero Thermal Expansion and High Ultraviolet transdosage in a Borate Crystal of Zn4B6O13，Adv.Mater.2016,28,7936-7940.
In the present invention, for Zn4B6O13The piezoelectric coefficient and sound velocity of the crystal were tested and found to have a shear piezoelectric coefficient (d) comparable to that of a quartz crystal commercially used in surface acoustic wave devices14) Higher acoustic speeds than quartz. The specific comparison is shown in table 1.
TABLE 1
Accordingly, it can be seen that:
1)Zn4B6O13the sound velocity of the crystal is higher than that of quartz, and Zn is compared with that of quartz under the condition of the same width of the input and output interdigital electrodes4B6O13The frequency of the manufactured transverse wave surface acoustic wave device can be improved by nearly fifty percent.
2)Zn4B6O13The piezoelectric phase temperature (1000 ℃) of the crystal is higher than that of quartz (573 ℃), and Zn is used4B6O13The manufactured transverse wave surface acoustic wave device can be used in a high-temperature environment which is higher than 573 ℃ and cannot be applied to quartz.
3) The quartz crystal being an anisotropic crystal, Zn4B6O13Is an isotropic crystal with isotropic physicochemical properties, in contrast to quartz, with Zn4B6O13The surface acoustic wave device made of the crystal has better stability.
4) For surface acoustic wave devices, the effective piezoelectric coefficient is the shear piezoelectric coefficient d14。Zn4B6O13D of the crystal14The value (0.65pm/V) is almost equivalent to that of quartz (0.73pm/V), using Zn4B6O13The conversion efficiency of the manufactured transverse wave surface acoustic wave device is equivalent to that of quartz.
Reacting the Zn with a catalyst4B6O13The crystal is used as a piezoelectric substrate in the preparation of the surface acoustic wave device, and the specific working principle of the prepared surface acoustic wave device is as follows:
1) an alternating voltage signal is input at an input end, and an alternating voltage is generated at two ends of the interdigital electrode at the input end.
2) Due to Zn4B6O13Inverse piezoelectric effect of crystals, Zn4B6O13Periodic mechanical vibrations (periodically varying strains) are generated at the input interdigital electrodes on the surface of the crystalline substrate and radiate outward along the surface of the substrate, forming surface waves.
After the surface wave is radiated to the output-side interdigital electrode, periodic mechanical vibration (periodically varying strain) is generated at the output-side interdigital electrode due to Zn4B6O13The piezoelectric effect of the crystal and the periodically changed strain form an alternating voltage signal at the interdigital electrode at the output end and are output at the output end to finish the conversion of the electric signal, the mechanical wave signal and the electric signal.
In the conversion process of electrical signal-mechanical wave signal-electrical signal, the frequency, mode, amplitude and the like of surface acoustic wave can be regulated and controlled by controlling the type, width and distance of the interdigital electrode, and the surface acoustic wave is influenced in Zn by the pressure, temperature and the like of the external environment4B6O13Boundary conditions propagating in the surface of the crystal substrate to regulate the propagation of the surface acoustic wave signal in the substrate and the conversion of the electrical signal-mechanical wave signal-electrical signal,the functions of filtering, resonance, transduction, sensing and the like are realized.
Illustratively, as shown in FIG. 1, a surface acoustic wave filter has a substrate Zn4B6O13The direction of the single crystal substrate is (100), (010) or (001), the type of the interdigital electrode is a periodic interdigital electrode, the period of the interdigital electrode is 1um, and according to the method, the center frequency of the filter is as follows: 7.5GHZ, the maximum applicable temperature of the device is 1000 ℃.
Under the same parameters, the center frequency of the filter taking the quartz crystal as the substrate is as follows: 5.1GHZ, the maximum applicable temperature of the device is 573 ℃. It is known that Zn is used as a substrate in comparison with a filter using a quartz crystal as a substrate4B6O13The center frequency of the filter with the single crystal as the substrate is improved by forty-seven percent, and the maximum applicable temperature is improved by 427 ℃.
Illustratively, as shown in FIG. 2, a surface acoustic wave resonator has a substrate Zn4B6O13The direction of the single crystal substrate is (100), (010) or (001), the interdigital electrode is in a periodic interdigital electrode type, and the period of the interdigital electrode is 1 um. According to the method, the center frequency of the surface acoustic wave resonator is as follows: 7.5GHZ, the maximum applicable temperature of the device is 1000 ℃.
Under the same parameters, the central frequency of the resonator with the quartz crystal as the substrate is as follows: 5.1GHZ, the maximum applicable temperature of the device is 573 ℃. It is known that Zn is used as a material for resonators using quartz crystals as a substrate4B6O13The center frequency of the resonator with the single crystal as the substrate is improved by forty-seven percent, and the maximum applicable temperature is improved by 427 ℃.
Illustratively, as shown in FIG. 3, a surface acoustic wave delay line has a substrate Zn4B6O13The direction of the single crystal substrate is (100), (010) or (001), the type of the interdigital electrode is an aperiodic interdigital electrode, the maximum and minimum spacing of the interdigital electrode is 5um and 1um, according to the method, the upper limit of the working frequency of the surface acoustic wave delay line is 3.75GHZ, and the maximum applicable temperature of the device is 1000 ℃.
Delay line device with quartz crystal as substrate under same parametersThe upper limit of the working frequency is 2.65GHZ, and the maximum applicable temperature of the device is 573 ℃. It is known that Zn is used as a retardation line in comparison with a delay line using a quartz crystal as a substrate4B6O13The upper limit of the working frequency of the delay line taking the single crystal as the substrate is improved by forty-seven percent, and the maximum applicable temperature is improved by 427 ℃.
The type of surface acoustic wave device in the present invention is not limited as long as it belongs to a surface acoustic wave device, and examples include, but are not limited to, surface acoustic wave filters, surface acoustic resonators, surface acoustic wave delay lines, and the like. And as long as it is Zn4B6O13The single crystal is used for surface acoustic wave devices and is within the protection scope of the invention.
It should be understood that the above-mentioned embodiments of the present invention are only examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention, and it will be obvious to those skilled in the art that other variations or modifications may be made on the basis of the above description, and all embodiments may not be exhaustive, and all obvious variations or modifications may be included within the scope of the present invention.
Claims (4)
1. A high-frequency surface acoustic wave device comprises a piezoelectric substrate and a metal electrode manufactured on the surface of the piezoelectric substrate, and is characterized in that the piezoelectric substrate is a zinc borate single crystal substrate;
the chemical formula of the material zinc borate single crystal of the zinc borate single crystal substrate is Zn4B6O13Space group is I-43m, and lattice constant is 7.47 angstrom;
the zinc borate single crystal has isotropy;
the piezoelectric coefficient of the zinc borate single crystal is d14＝0.65pm/V；
The transverse wave sound velocity of the zinc borate single crystal is 7526 m/s;
the longitudinal wave sound velocity of the zinc borate single crystal is 9889 m/s;
the piezoelectric phase temperature of the zinc borate single crystal is-273-1000 ℃.
2. A high frequency saw device according to claim 1, wherein said metal electrodes are interdigital electrodes.
3. The application of the zinc borate single crystal is characterized in that the zinc borate single crystal is used as a piezoelectric substrate for preparing a high-frequency surface acoustic wave device, wherein the high-frequency surface acoustic wave device comprises the piezoelectric substrate and a metal electrode manufactured on the surface of the piezoelectric substrate;
the chemical formula of the material zinc borate single crystal of the zinc borate single crystal substrate is Zn4B6O13Space group is I-43m, and the lattice constant is 7.47 angstroms;
the zinc borate single crystal has isotropy;
the shearing piezoelectric coefficient of the zinc borate single crystal is d14＝0.65pm/V；
The transverse wave sound velocity of the zinc borate single crystal is 7526 m/s;
the longitudinal wave sound velocity of the zinc borate single crystal is 9889 m/s;
the piezoelectric phase temperature of the zinc borate single crystal is-273-1000 ℃.
4. Use according to claim 3, characterized in that the metal electrodes are interdigitated electrodes.
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