CN118075979A - High-speed signal transmission device and high-speed optical module receiving and transmitting assembly - Google Patents

Abstract

The present disclosure provides a high-speed signal transmission device and high-speed optical module receiving-transmitting assembly, the high-speed signal transmission device includes: a substrate; a printed circuit board, comprising: a first insulating layer disposed on the substrate; a signal transmission layer, comprising: a plurality of signal transmission channels arranged on the first insulating layer at intervals; a plurality of ground metal patterns arranged between the plurality of signal transmission channels at intervals; a plurality of vias extending downward from the signal transmission layer to electrically connect the signal transmission layer to the substrate; and a wire electrically connecting the plurality of ground metal patterns with the via holes, respectively, to cooperate with the plurality of ground metal patterns, shield electromagnetic interference of adjacent signal transmission channels, optimize a reflow path, and expand a transmission bandwidth of the signal transmission layer; the signal processing chip is arranged on the substrate at intervals with the signal transmission component and is suitable for receiving the electric signal transmitted by the signal transmission layer from the outside or generating the electric signal and outputting the electric signal by the signal transmission layer.

Description

High-speed signal transmission device and high-speed optical module receiving and transmitting assembly

Technical Field

At least one embodiment of the present disclosure relates to the field of optical communications technologies, and in particular, to a high-speed signal transmission device and a high-speed optical module transceiver assembly.

Background

With the demand of high-speed communication, the communication rate of the optical module reaches 800Gbps and 1.6Tbps, the number of signal transmission channels is more, the packaging integration level is higher, and the internal layout wiring density of the optical module is also higher. For high-density high-speed transmission lines, the signal transmission bandwidth and the crosstalk between different channels have a great influence on the signal quality, and the transmission line structure needs to be optimized, so that the transmission line bandwidth is improved, and the crosstalk between the channels is reduced.

With the development trend of high-integration modules, the pitch of pin PADs (PAD) of the photoelectric chip is smaller and smaller, from the 1.2mm pitch of the multichannel Electroabsorption Modulation Laser (EML) to the 100um channel pitch of the silicon photonic integrated chip and the 625um pitch of the signal transmission channel of the electric driving chip. The channel spacing of the Transmission Impedance Amplifier (TIA) and the Photodetector (PD) at the receiving end is also reduced from 750um spacing to 500um spacing, and gradually progresses toward 250um spacing. It is difficult to make ground metal patterns of sufficient spacing between such closely spaced signal transmission channels to shield adjacent channels from electromagnetic interference, limited by the PCB technology level. Meanwhile, a reflow ground via hole is difficult to place on a ground metal pattern between adjacent channels, so that a reflow path of a ground signal is prolonged, an inductance effect is enhanced, and a frequency resonance point moves towards a low-frequency direction. If the resonance point falls within the signal bandwidth, this can lead to a deterioration in signal quality and ultimately to an increase in the bit error rate of the signal transmission.

Disclosure of Invention

In order to solve the technical problems in the prior art, the present disclosure provides a high-speed signal transmission device and a high-speed optical module transceiver assembly, where the high-speed signal transmission device can be implemented on a signal transmission channel with a small pitch (several tens micrometers), shield electromagnetic interference of adjacent signal transmission channels, optimize a backflow path, and expand a transmission bandwidth.

As one aspect of the embodiments of the present disclosure, there is provided a signal transmission apparatus including a substrate, a printed circuit board, and a signal processing chip. The printed circuit board comprises a first insulating layer, a signal transmission layer, a via hole and a wire. The first insulating layer is arranged on the substrate, and the signal transmission layer comprises a plurality of signal transmission channels and a plurality of ground metal patterns. The plurality of signal transmission channels are arranged on the first insulating layer at intervals, and the plurality of ground metal patterns are arranged among the plurality of signal transmission channels at intervals. The via hole extends downwards from the signal transmission layer to electrically connect the signal transmission layer with the substrate, the lead wire electrically connects the ground metal patterns with the via hole respectively to cooperate with the ground metal patterns, shield electromagnetic interference of adjacent signal transmission channels, optimize a reflow path and expand transmission bandwidth of the signal transmission layer. The signal processing chip is arranged on the substrate at intervals from the signal transmission component and is suitable for receiving the external electric signal transmitted through the signal transmission layer or generating the electric signal and outputting the electric signal through the signal transmission layer.

According to an embodiment of the present disclosure, the signal transmission assembly further includes a plurality of first metal layers, a plurality of second insulating layers, and a second metal layer. The first metal layers are stacked on the PCB along the height direction, the second insulating layers are respectively arranged on the first metal layers, the second metal layers are arranged on the second insulating layer positioned on the uppermost layer, the first insulating layer is positioned on the second metal layers, and the second metal layers are used as reflux path reference layers of electric signals.

According to an embodiment of the present disclosure, the via includes a first via and a second via. The first via hole extends downwards from the signal transmission layer and is electrically connected with the second metal layer through the first insulating layer. The second via hole extends downwards from the second metal layer to the first metal layer at the bottom. The second vias are electrically connected to the first vias through the second metal layer, so that the ground metal pattern has equal potential with the second metal layer and the first metal layers.

According to an embodiment of the disclosure, the signal transmission assembly further includes a third insulating layer disposed on the signal transmission layer, and a plurality of windows are formed in the third insulating layer above the ground metal pattern. And each ground metal pattern is further provided with a first bonding pad, a plurality of first bonding pads are positioned in the windows, a plurality of wires are welded among the first bonding pads, and each ground metal pattern is connected and electrically connected with the reflow path reference layer through the first via hole.

According to an embodiment of the disclosure, the first via hole is disposed on a ground metal pattern located at two sides of the signal transmission component.

According to an embodiment of the present disclosure, a pitch between adjacent ones of the first vias should not exceed one tenth of a signal wavelength of the electrical signal.

According to an embodiment of the disclosure, the third insulating layer is a solder mask layer.

According to an embodiment of the disclosure, a second bonding pad is disposed on an upper surface of the signal processing chip near one end of the signal transmission layer, a third bonding pad is disposed on one end of the signal transmission channel and the ground metal pattern near the signal processing chip, and the second bonding pad and the third bonding pad are electrically connected by a plurality of wires.

According to the embodiment of the disclosure, a plurality of wires are used for connection between each of the second bonding pad and the third bonding pad, so as to reduce parasitic inductance of the transmission channel.

As another aspect of the embodiments of the present disclosure, there is provided an optical module including any one of the signal transmission devices described above.

According to the signal transmission device disclosed by the embodiment of the disclosure, the plurality of ground metal patterns are electrically connected with the via holes through the wires respectively, so that the ground metal patterns are electrically connected with the reference layer of the reflow path, electromagnetic interference of adjacent signal transmission channels is shielded, the ground signal reflow path is optimized, a parallel plate mode is eliminated, and the transmission bandwidth of the signal transmission layer is widened.

Drawings

Fig. 1 schematically illustrates a perspective view of a signal transmission device of an embodiment of the present disclosure;

Fig. 2 schematically illustrates a side view of a signal transmission device of an embodiment of the present disclosure;

Fig. 3 schematically illustrates a top view of a signal transmission device of an embodiment of the present disclosure;

fig. 4 schematically illustrates a side view of a signal transmission assembly of an embodiment of the present disclosure;

Fig. 5 schematically shows a first partial view of the signal transmission device shown in fig. 3 from a top view;

fig. 6 schematically shows a second partial view of the top view of the signal transmission device shown in fig. 3;

Fig. 7 schematically illustrates a related art signal return path schematic diagram; and

Fig. 8 schematically illustrates a simulation result diagram of a signal transmission device according to an embodiment of the present disclosure.

Reference numerals illustrate:

1-a substrate;

11-boss;

2-a printed circuit board;

21-a first insulating layer;

22-a signal transmission layer;

221-signal transmission channel;

222-ground metal pattern;

2221—a first pad;

23-via holes;

231-first vias;

232-a second via;

24-conducting wires;

25-a second insulating layer;

26-a first metal layer;

27-a third insulating layer;

28-a third bonding pad;

29-a second metal layer;

3-a signal processing chip;

31-second pads.

Detailed Description

For the purposes of promoting an understanding of the principles and advantages of the disclosure, reference will now be made to the embodiments illustrated in the drawings and specific language will be used to describe the same. This disclosure may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art. In the drawings, the size of layers and regions, as well as the relative sizes, may be exaggerated for the same elements throughout.

Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is only exemplary and is not intended to limit the scope of the present disclosure. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the present disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the concepts of the present disclosure.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. The terms "comprises," "comprising," and/or the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.

All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art unless otherwise defined. It should be noted that the terms used herein should be construed to have meanings consistent with the context of the present specification and should not be construed in an idealized or overly formal manner.

For the convenience of those skilled in the art to understand the technical solutions of the present disclosure, the following technical terms will be explained.

Where a convention analogous to "at least one of A, B and C, etc." is used, in general such a convention should be interpreted in accordance with the meaning of one of skill in the art having generally understood the convention (e.g., "a system having at least one of A, B and C" would include, but not be limited to, systems having a alone, B alone, C alone, a and B together, a and C together, B and C together, and/or A, B, C together, etc.). Where a formulation similar to at least one of "A, B or C, etc." is used, in general such a formulation should be interpreted in accordance with the ordinary understanding of one skilled in the art (e.g. "a system with at least one of A, B or C" would include but not be limited to systems with a alone, B alone, C alone, a and B together, a and C together, B and C together, and/or A, B, C together, etc.).

Fig. 1 schematically illustrates a perspective view of a signal transmission device of an embodiment of the present disclosure, fig. 2 schematically illustrates a side view of the signal transmission device of an embodiment of the present disclosure, and fig. 3 schematically illustrates a top view of the signal transmission device of an embodiment of the present disclosure.

As an aspect of the embodiments of the present disclosure, there is provided a signal transmission apparatus, as shown in fig. 1 to 3, including a substrate 1, a printed circuit board (PCB board) 2, and a signal processing chip 3. The printed circuit board 2 includes a first insulating layer 21, a signal transmission layer 22, vias 23, and wires 24. The first insulating layer 21 is disposed under the signal transmission layer 22, and the signal transmission layer 22 includes a plurality of signal transmission channels 221 and a plurality of ground metal patterns 222. A plurality of signal transmission channels 221 are disposed on the first insulating layer 21 at intervals, and a plurality of ground metal patterns 222 are disposed between the plurality of signal transmission channels 221 at intervals. The via hole 23 extends downwards from the signal transmission layer 22, so that the ground metal patterns of the signal transmission layer 22 are electrically connected with the substrate 1, and the wires 24 respectively electrically connect the plurality of ground metal patterns 222 with the via hole 23 so as to cooperate with the plurality of ground metal patterns 222, shield electromagnetic interference of adjacent signal transmission channels 221, optimize a reflow path of the signal transmission channels 221, and expand a transmission bandwidth of the signal transmission layer 22. The signal processing chip 3 is disposed on the substrate 1 at a distance from the signal transmission assembly 2, and is adapted to receive an electrical signal transmitted from the outside through the signal transmission layer 22, or to generate an electrical signal and output through the signal transmission layer 22.

According to the signal transmission device disclosed by the embodiment of the disclosure, the plurality of ground metal patterns are electrically connected with the via holes through the wires respectively, so that the ground metal patterns are electrically connected with the substrate, electromagnetic interference of adjacent signal transmission channels is shielded, a reflux path of the high-speed signal transmission channels is optimized, a parallel plate mode is eliminated, and the transmission bandwidth of the signal transmission layer is widened.

According to the embodiment of the present disclosure, the substrate 1 is made of a metal material, which has high thermal conductivity and small thermal expansion coefficient, and may be tungsten copper, kovar, or the like, for example.

According to an embodiment of the present disclosure, the signal processing chip 3 is an electrical chip or an optoelectronic chip.

According to an embodiment of the present disclosure, the material of the signal transmission layer 22 includes a low roughness copper foil.

According to an embodiment of the present disclosure, the first insulating layer 21 is a low loss dielectric.

According to an embodiment of the present disclosure, the wire 24 is a gold wire. It will be appreciated that the wire 24 may also be of other conductive metal materials, such as copper.

According to embodiments of the present disclosure, the signal transmission layer 22 is a high-speed signal transmission layer, for example, the transmission rate may be 800Gbps or 1.6Tbps.

According to embodiments of the present disclosure, the via is also referred to as a metallization hole. In the process, a layer of metal is plated on the hole wall cylindrical surface of the through hole by using a chemical deposition method so as to be communicated with the first metal layer 26 of each layer in the middle.

According to an embodiment of the present disclosure, as shown in fig. 2, a reflow path between the PCB and the signal processing chip is shown within a dashed box.

Fig. 4 schematically illustrates a side view of a signal transmission assembly of an embodiment of the present disclosure.

According to an embodiment of the present disclosure, as shown in fig. 1,2 and 4, the printed circuit board 2 further includes a plurality of second insulating layers 25, a plurality of first metal layers 26 and a second metal layer 29. The plurality of first metal layers 26 are stacked on the PCB in the height direction, the plurality of second insulating layers 25 are respectively disposed on the plurality of first metal layers 26, and the second metal layer 29 is disposed on the second insulating layer 25 on top, wherein the first insulating layer 21 is disposed on the second metal layer 29, and the second metal layer 29 serves as a reference layer for a return path of the electrical signal transmitted through the signal transmission layer 22.

According to the embodiment of the disclosure, the first metal layer 26 includes a ground signal layer, other signal transmission layers, and a power layer, and the second metal layer 29 is a reference layer for a reflow path of an electrical signal transmitted through the signal transmission layer 22, so that the plane integrity of the second metal layer 29 needs to be ensured for ensuring good signal integrity.

According to an embodiment of the present disclosure, the first metal layer 26 located at the bottom may adhere the printed circuit board 2 to the substrate 1 by conductive paste.

In an exemplary embodiment, as shown in fig. 4, the signal transmission assembly 2 further includes 3 second insulating layers 25 and 3 first metal layers 26 disposed on the 3 second insulating layers 25, respectively. It is understood that the number of the first metal layers 26 and the second insulating layers 25 may also include any of a variety of numbers of 2, 5, 10, etc., respectively.

According to an embodiment of the present disclosure, as shown in fig. 1, 2 and 4, the via 23 includes a first via 231 and a second via 232. The first via 231 extends downward from the signal transmission layer 22, and is electrically connected to the second metal layer 29 through the first insulating layer 21. The second via 232 extends from the second metal layer 29 at the top down to the first metal layer 26 at the bottom, and is electrically connected to the substrate 1. The second vias 232 and the first vias 231 are electrically connected through the second metal layer 29 at the top, so that the ground metal pattern 222 and the second metal layer 29, and the first metal layers 26 have equal electric potential, and resonance of the signal transmission channel 221 is avoided.

Further, since the signal transmission layer 22 is a high-speed signal transmission layer, the transmission channel interval of a small pitch (several tens micrometers) results in that no via hole can be placed on the ground metal pattern 222. As shown in fig. 1, the first via 231 is disposed on the ground metal pattern 222 located at the edge of the signal transmission assembly 2.

In an exemplary embodiment, a plurality of first vias 231 are disposed on both ground metal patterns 222 on both sides of the signal transmission assembly 2.

In an exemplary embodiment, the first via 231 extends to the first metal layer 26 located at the upper portion.

In another illustrative embodiment, the first via 231 extends to the first metal layer 26 located in the middle.

Fig. 5 schematically shows a first partial view of the signal transmission device shown in fig. 3 from above.

According to an embodiment of the present disclosure, as shown in fig. 2, 4 and 5, the signal transmission assembly 2 further includes a third insulating layer 27 disposed on the signal transmission layer 22, and a plurality of windows are opened on the third insulating layer 27 above the ground metal pattern 222. Each ground metal pattern 222 is further provided with a first bonding pad 2221, the plurality of first bonding pads 2221 are located in the plurality of windows, and the plurality of wires 24 are welded between the plurality of first bonding pads 2221, so that each ground metal pattern 222 is connected and electrically connected with the second metal layer 29 through the first via 231.

According to the embodiment of the present disclosure, the third insulating layer 27 is a solder mask, and a method of opening windows by solder mask may be used to open a plurality of windows on the third insulating layer 27.

According to the embodiment of the disclosure, by providing the third insulating layer 27, the third insulating layer 27 can insulate the signal transmission layer 22 from the outside on one hand, and can protect the signal transmission assembly 2 on the other hand, and can also serve as an insulating layer between the wire 24 and the signal transmission channel 221, so as to avoid electrical connection between the wire 24 and the signal transmission channel 221.

According to an embodiment of the present disclosure, the spacing between adjacent first vias 231 should not exceed one tenth of the signal wavelength of the electrical signal.

Fig. 6 schematically shows a second partial view of the top view of the signal transmission device shown in fig. 3.

According to the embodiment of the disclosure, as shown in fig. 1,3 and 6, the upper surface of the end, close to the signal transmission layer 22, of the signal processing chip 3 is provided with a second bonding pad 31, one ends, close to the signal processing chip 3, of the signal transmission channel 221 and the ground metal pattern 222 are respectively provided with a third bonding pad 28, and the second bonding pad 31 and the third bonding pad 28 are electrically connected by using a plurality of wires 24, so that the ground signal of the signal processing chip 3 is electrically connected with the via hole, and the reflow path is reduced.

According to the embodiment of the present disclosure, the upper surface of the signal transmission layer 22 is maintained to be consistent with the level of the upper surface of the second pad 31 on the signal processing chip 3 to shorten the length of the wire 24, thereby reducing parasitic inductance.

In an exemplary embodiment, as shown in fig. 1 and 2, a boss 11 is formed upward in the height direction of the substrate 1, and the signal processing chip 3 is disposed on the boss 11 such that the upper surface of the signal transmission layer 22 is maintained to be uniform with the level of the upper surface of the second pad 31 on the signal processing chip 3.

In an exemplary embodiment, the boss 11 is disposed on the substrate 1 and may be integral with the substrate 1.

According to an embodiment of the present disclosure, as shown in fig. 1 to 3 and 6, a plurality of wires 24 are connected between each of the second pads 31 and the third pads 28 to reduce parasitic inductance of the transmission channel, thereby further expanding the bandwidth of the transmission channel.

In an exemplary embodiment, two wires may be used to electrically connect each of the second pads 31 and the third pads 28, reducing parasitic inductance of the transmission channel.

According to the embodiment of the present disclosure, the plurality of signal transmission channels 221 are provided on the first insulating layer 21, and the intervals between the signal transmission channels 221 are kept identical to the intervals of the second pads 31 between the adjacent channels on the signal processing chip 3, so that the distance of the wires 24 is shortened, thereby further improving the transmission quality of signals.

According to an embodiment of the present disclosure, a plurality of first vias 231 are disposed on the ground metal patterns 222 located at both sides of the plurality of signal transmission channels 221, and the first vias 231 electrically connect the ground metal patterns 222 and the second metal layer 29. The plurality of first bonding pads 2221 on the ground metal pattern 222 sequentially perform gold wire bonding, one end of each gold wire is connected with the first bonding pad 2221 on the ground metal pattern 222, the other end of each gold wire is arranged on the adjacent ground metal pattern 222, and the other end of each gold wire on the ground metal pattern 222 close to the edge of the signal transmission component 2 is arranged beside the adjacent first via 231. The third pads 28 on the signal transmission assembly 2 are electrically connected with the corresponding second pads 31 on the signal processing chip 3, forming transmission channels for high-speed signals.

According to the embodiment of the disclosure, the metal substrate 1 is a reflow reference ground of the signal processing chip 3, and the substrate 1 is electrically connected with the first metal layer 26 of the signal transmission component 2, so as to form a complete reflow path between the substrate 1 and the signal transmission component 2.

According to the embodiment of the present disclosure, since the signal transmission layer 22 is a high-speed signal transmission type, the transmission channel interval of a small pitch (several tens micrometers) results in the inability to place the via hole on the ground metal pattern 222. And thus the signal transmission layer 22 and the second metal layer 29 cannot be connected, resulting in a parallel plate mode.

Fig. 7 schematically shows a signal return path schematic diagram of the related art.

As shown in fig. 7, G represents the ground metal pattern 222, and s represents the signal transmission channel 221. In the related art, the ground potential of the signal transmission layer 22 and the second metal layer 29 is different due to the electromagnetic coupling effect, resulting in the presence of an electromagnetic field between the ground metal pattern 222 of the signal transmission layer 22 and the second metal layer, and the transmission line mode mutual coupling between the parallel plate mode and the ground metal pattern 222 results in the generation of resonance. The high-speed signal transmission layer and the ground signal of the second metal layer 29 are electrically connected through the wire 24 and the via hole, and a potential difference therebetween is eliminated, so that a parallel plate mode can be eliminated, resonance due to the parallel plate mode is eliminated, and the transmission bandwidth of the signal transmission channel is extended.

Fig. 8 schematically illustrates a simulation result diagram of a signal transmission device according to an embodiment of the present disclosure.

As shown in fig. 8, the abscissa Frequency represents Frequency (GHz), and the ordinate S21 represents Frequency response (dB).

According to an embodiment of the present disclosure, by simulating a signal transmission device in the related art and a signal transmission device provided by the present disclosure, as shown in fig. 8, a dotted line represents a graph of frequency versus frequency response of the signal transmission device before optimization, that is, in the related art, and a solid line represents a graph of frequency versus frequency response of the signal transmission device after optimization, that is, in the signal transmission device provided by the present disclosure. As can be seen from fig. 8, the frequency of the signal transmission device provided by the present disclosure at the resonance point is higher, which indicates that the signal transmission device provided by the present disclosure has a higher transmission bandwidth.

As another aspect of the embodiments of the present disclosure, there is provided an optical module including any one of the signal transmission devices described above.

It should be further noted that, the directional terms mentioned in the embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., are only referring to the directions of the drawings, and are not intended to limit the scope of the present disclosure. Like elements are denoted by like or similar reference numerals throughout the drawings. In the event that an understanding of the present disclosure may be made, conventional structures or constructions will be omitted, and the shapes and dimensions of the various parts in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure.

Unless otherwise known, numerical parameters in this specification and the appended claims are approximations that may vary depending upon the desired properties sought to be obtained by the present disclosure. In particular, all numbers expressing quantities of ingredients, reaction conditions, and so forth used in the specification and claims are to be understood as being modified in all instances by the term "about". In general, the meaning of expression is meant to include a variation of + -10% in some embodiments, a variation of + -5% in some embodiments, a variation of + -1% in some embodiments, and a variation of + -0.5% in some embodiments by a particular amount.

The use of ordinal numbers such as "first," "second," "third," etc., in the description and the claims to modify a corresponding element does not by itself connote any ordinal number of elements or the order of manufacturing or use of the ordinal numbers in a particular claim, merely for enabling an element having a particular name to be clearly distinguished from another element having the same name.

Furthermore, unless specifically described or steps must occur in sequence, the order of the above steps is not limited to the list above and may be changed or rearranged according to the desired design. In addition, the above embodiments may be mixed with each other or other embodiments based on design and reliability, i.e. the technical features of the different embodiments may be freely combined to form more embodiments.

The foregoing embodiments have been provided for the purpose of illustrating the general principles of the present disclosure, and are not meant to limit the disclosure to the particular embodiments disclosed, but to limit the scope of the disclosure to the particular embodiments disclosed.

Claims (10)

1. A high-speed signal transmission device, comprising:

a substrate;

A printed circuit board, comprising:

a first insulating layer disposed on the substrate;

A signal transmission layer, comprising:

A plurality of signal transmission channels arranged on the first insulating layer at intervals;

a plurality of ground metal patterns arranged between the signal transmission channels at intervals;

a via extending downward from the signal transmission layer to electrically connect the signal transmission layer with the substrate; and

The lead is used for respectively and electrically connecting the ground metal patterns with the via holes so as to be matched with the ground metal patterns, shielding electromagnetic interference of adjacent signal transmission channels, optimizing a reflux path and expanding the transmission bandwidth of the signal transmission layer;

and the signal processing chip is arranged on the substrate at intervals with the signal transmission component and is suitable for receiving the electric signal from the outside and transmitted through the signal transmission layer or generating the electric signal and outputting the electric signal through the signal transmission layer.

2. The high-speed signal transmission device of claim 1, wherein the printed circuit board further comprises:

the first metal layers are stacked on the printed circuit board along the height direction; and

A plurality of second insulating layers respectively arranged on the plurality of first metal layers;

a second metal layer disposed on the second insulating layer on top;

The first insulating layer is located on the second metal layer, and the second metal layer is used as a reflux path reference layer of the electric signal.

3. The high-speed signal transmission device of claim 2, wherein the via comprises:

a first via extending downward from the signal transmission layer and electrically connected to the second metal layer through the first insulating layer; and

A second via hole extending downwards from the second metal layer to the first metal layer at the bottom;

the second through holes and the first through holes are electrically connected through the second metal layer, so that the ground metal pattern is equal to the second metal layer and the first metal layers in potential.

4. A high speed signal transmission device in accordance with claim 3, wherein said signal transmission assembly further comprises:

the third insulating layer is arranged on the signal transmission layer, and a plurality of windows are formed in the third insulating layer above the ground metal pattern;

and each ground metal pattern is further provided with a first bonding pad, a plurality of first bonding pads are positioned in a plurality of windowed holes, a plurality of wires are welded among the plurality of first bonding pads, and each ground metal pattern is connected and electrically connected with the reflow path reference layer through the first via hole.

5. A high speed signal transmission device according to claim 3, wherein the first via is provided on ground metal patterns on both sides of the signal transmission assembly.

6. The high-speed signal transmission device of claim 5, wherein a pitch between adjacent ones of the first vias is no more than one tenth of a signal wavelength of the electrical signal.

7. A high-speed signal transmission device according to claim 3, wherein the third insulating layer is a solder resist layer.

8. The high-speed signal transmission device according to claim 1, wherein a second bonding pad is disposed on an upper surface of the signal processing chip near one end of the signal transmission layer, a third bonding pad is disposed on one end of the signal transmission channel and the ground metal pattern near the signal processing chip, and the second bonding pad and the third bonding pad are electrically connected by a plurality of wires.

9. The high-speed signal transmission device according to claim 8, wherein a plurality of wires are connected between each of the second pads and the third pads to reduce parasitic inductance of the transmission channel.

10. A high-speed optical module transceiver assembly, comprising:

the high-speed signal transmission device of any one of claims 1-9.