CN118074640A - Power amplifier based on enhancement mode GaN HEMTs - Google Patents
Power amplifier based on enhancement mode GaN HEMTs Download PDFInfo
- Publication number
- CN118074640A CN118074640A CN202410191229.1A CN202410191229A CN118074640A CN 118074640 A CN118074640 A CN 118074640A CN 202410191229 A CN202410191229 A CN 202410191229A CN 118074640 A CN118074640 A CN 118074640A
- Authority
- CN
- China
- Prior art keywords
- gan
- gan hemt
- power amplifier
- hemt
- module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003321 amplification Effects 0.000 claims abstract description 24
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims description 5
- 239000003990 capacitor Substances 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 63
- 229910002601 GaN Inorganic materials 0.000 description 61
- 238000010586 diagram Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
Landscapes
- Amplifiers (AREA)
Abstract
The invention discloses a power amplifier based on enhanced GaN HEMTs, and relates to the field of power amplification, wherein a signal input module in the power amplifier is connected with a grid electrode of a first GaN HEMT in an amplifying module; the drain electrode of the GaN HEMT is connected with the grid electrode of the next GaN HEMT through a protection resistor unit; the drain electrode of the last GaN HEMT is connected with the amplified signal output module; when the input signal output by the signal input module enables the GaN HEMT to be completely turned on or completely turned off, the source electrode of the GaN HEMT is connected with the bias voltage module; when the input signal output by the signal input module enables the GaN HEMT to be in incomplete opening, the source electrode of the GaN HEMT is grounded. The invention can amplify weak and small signals in a single stage or multiple stages, and has the characteristics of high amplification factor, high response speed and high-frequency and high-temperature stability.
Description
Technical Field
The invention relates to the field of power amplification, in particular to a power amplifier based on enhanced GaN HEMTs.
Background
Gallium nitride (GaN) material has the advantages of large forbidden bandwidth, high breakdown field strength and the like, and a normal Guan Xing GaN-based High Electron Mobility Transistor (HEMT) device prepared by the gallium nitride (GaN) material is completely exhausted under zero grid voltage, and a channel is turned off; channel opening requires a sufficient positive gate to source voltage difference.
However, how to provide a sufficient positive voltage difference between the gate and the source, especially in a high temperature environment, is still a problem to be solved.
Therefore, it is desirable to provide a power amplifier based on enhanced GaN HEMTs, which can amplify weak signals in a single stage or in multiple stages, and can be used for amplifying low-voltage high-frequency signals in a high-temperature environment, and when the power amplifier is in an optimal working state, the drain voltage and the current of the transistor are not overlapped completely, so that the theoretical dc conversion efficiency of 100% can be achieved.
Disclosure of Invention
The invention aims to provide a power amplifier based on enhanced GaN HEMTs, which can amplify weak and small signals in a single stage or multiple stages and has the characteristics of high amplification factor, high response speed and high-frequency and high-temperature stability.
In order to achieve the above object, the present invention provides the following solutions:
A power amplifier based on enhanced GaN HEMTs, the power amplifier comprising: the device comprises a signal input module, an amplifying signal output module, an external power supply VDD and a bias voltage module;
the amplifying module includes: a protection resistor unit, a filter device and a plurality of cascaded GaN HEMTs;
The signal input module is connected with the grid electrode of the first GaN HEMT in the amplifying module; the drain electrode of the GaN HEMT is connected with the grid electrode of the next GaN HEMT through the protection resistor unit; the drain electrode of the last GaN HEMT is connected with the amplified signal output module; the drain electrode of the GaN HEMT is connected with an external power supply VDD through a resistor; the source electrode of the GaN HEMT is connected with the filter device; when the GaN HEMT is completely turned on or completely turned off by an input signal output by the signal input module, the source electrode of the GaN HEMT is connected with the bias voltage module; when the input signal output by the signal input module enables the GaN HEMT to be in incomplete opening, the source electrode of the GaN HEMT is grounded, and signal amplification is directly carried out.
Optionally, the GaN HEMT includes: a substrate, a gate, source and drain electrodes, and a heterojunction conductive channel formed between the source and drain electrodes.
Optionally, the gate, the source and the drain of the GaN HEMT are in the same side horizontal structure.
Optionally, the GaN HEMTs in the amplifying modules are different, and different GaN HEMTs realize different amplification factors.
Alternatively, a single GaN HEMT voltage division variation is amplified several times the inverse of the input signal.
Optionally, the filter device is a capacitor.
Optionally, the protection resistance unit includes: a diode and one resistor in parallel with the diode and another resistor in series with the parallel structure.
Optionally, the method further comprises: and a voltage dividing resistor between the drain of the GaN HEMT and an external power supply VDD.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
The application provides a power amplifier based on enhanced GaN HEMTs, which comprises: a protection resistor unit, a filter device and a plurality of cascaded GaN HEMTs; when the input signal output by the signal input module enables the GaN HEMT to be completely turned on or completely turned off, the source electrode of the GaN HEMT is connected with the bias voltage module; when the input signal output by the signal input module enables the GaN HEMT to be in incomplete starting, the source electrode of the GaN HEMT is grounded, and signal amplification is directly carried out; the amplification of the gate signal is realized by controlling the opening of the source drain channel of the GaN HEMTs. The circuit can realize voltage amplification and current amplification, and has the advantages of high amplification factor, high response speed, high-frequency high-temperature stability and the like. The application can be used for amplifying low-voltage high-frequency signals in a high-temperature environment and can carry out single-stage or multi-stage amplification on weak signals.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the drawings that are needed in the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of a power amplifier based on enhanced GaN HEMTs according to the present invention;
fig. 2 is a schematic diagram of a power amplifier based on enhanced GaN HEMTs according to the present invention;
FIG. 3 is a block diagram of a single stage circuit;
FIG. 4 is a block diagram of a two-stage circuit;
FIG. 5 is a block diagram of a three stage circuit;
FIG. 6 is a schematic diagram of the amplification result of a 2mV voltage difference input signal of a three-stage circuit.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention aims to provide a power amplifier based on enhanced GaN HEMTs, which can amplify weak and small signals in a single stage or multiple stages and has the characteristics of high amplification factor, high response speed and high-frequency and high-temperature stability.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
As shown in fig. 1 and fig. 2, the power amplifier based on the enhanced GaN HEMTs provided by the invention comprises: the device comprises a signal input module, an amplifying signal output module, an external power supply VDD and a bias voltage module.
The amplifying module includes: a protection resistor unit, a filter device and a plurality of cascaded GaN HEMTs.
The signal input module is connected with the grid electrode of the first GaN HEMT in the amplifying module; the drain electrode of the GaN HEMT is connected with the grid electrode of the next GaN HEMT through the protection resistor unit; the drain electrode of the last GaN HEMT is connected with the amplified signal output module; the drain electrode of the GaN HEMT is connected with an external power supply VDD through a resistor; the source electrode of the GaN HEMT is connected with the filter device; when the GaN HEMT is completely turned on or completely turned off by an input signal output by the signal input module, the source electrode of the GaN HEMT is connected with the bias voltage module; when the input signal output by the signal input module enables the GaN HEMT to be in incomplete opening, the source electrode of the GaN HEMT is grounded, and signal amplification is directly carried out.
The signal input module is used as a starting end of the power amplifier structure provided by the invention, and an original signal to be amplified is applied to a grid electrode of a first HEMT of the amplifying module; the amplified signal output module is used as the tail end of the power amplifier structure provided by the invention and is connected with the drain electrode of the last HEMT in the amplifying module.
The GaN HEMT includes: a substrate, a gate, source and drain electrodes, and a heterojunction conductive channel formed between the source and drain electrodes. The grid electrode, the source electrode and the drain electrode of the GaN HEMT are of the same side horizontal structure.
In the absence of an applied voltage, the heterojunction conduction channel between the source and the drain is closed, and the source and the drain are substantially non-conductive; by applying a voltage to the gate, the degree of opening of the heterojunction conduction channel between the source and the drain can be controlled, and the on and off of the GaN HEMT can be controlled. The GaN HEMT is a core structure for realizing the amplifying function of the amplifier, the amplifying modules are cascaded through different numbers of GaN HEMTs to realize different amplifying times, input signals are applied to a first HEMT grid electrode of the amplifying module, a first HEMT drain electrode is connected with a second HEMT grid electrode directly or through a diode and a resistor, a second HEMT drain electrode is connected with a next HEMT grid electrode directly or through a diode and a resistor, and the like, and a last HEMT drain electrode is connected with an amplifying signal output part.
When the conducting channel between the source electrode and the drain electrode of the GaN HEMT is completely opened, the resistance between the source electrode and the drain electrode is very small and is approximately short-circuited, and when the conducting channel between the source electrode and the drain electrode is completely closed, the resistance between the source electrode and the drain electrode is very large and is approximately open-circuited; when the GaN HEMT is not fully opened, the resistance between the source electrode and the drain electrode can correspondingly change in real time along with the change of the grid voltage, when the GaN HEMT is connected in series with the resistance and the fixed voltage is applied, the partial pressure between the source electrode and the drain electrode can correspondingly change in real time along with the change of the grid voltage, and the partial pressure change of the single GaN HEMT is amplified by the inverse multiple times of the input signal. Because different GaN HEMT devices have different structural designs and different processes, the gate voltages for completely opening and completely closing the devices are different, and in practical application, if an input signal can control the GaN HEMT to be in incomplete opening, the HEMT source electrode in the amplifier amplifying module can be grounded to directly amplify signals. If the GaN HEMT is completely turned on or completely turned off by inputting signals in practical application, the GaN HEMT cannot be directly amplified, and bias voltage is required to be applied to the source electrode of the HEMT in the amplifying module of the amplifier, so that the potential difference between the gate electrode and the source electrode is changed, and an additional power module or resistor voltage division with different resistance values is selected according to practical application. By additionally adding the bias voltage value, the voltage difference of the input signal minus the bias voltage is in the incomplete opening interval of the used GaN HEMT, so that the voltage division of the HEMT in the amplifying module can be changed along with the input signal, thereby realizing the amplifying function.
Besides amplifying the 0 voltage substrate signal, the application can also amplify the input signal normally for small signal variation on a higher voltage substrate. Compared with the traditional operational amplifier, the amplifier disclosed by the application benefits from the excellent property of the GaN HEMT, and has the advantages of high response speed, high-frequency high-temperature stability and the like.
As a specific embodiment, the filter device is a capacitor.
As a specific embodiment, the protection resistance unit includes: a diode and one resistor in parallel with the diode and another resistor in series with the parallel structure.
In order to ensure the stability of the circuit, the power amplifier provided by the invention further comprises: and a voltage dividing resistor between the drain of the GaN HEMT and an external power supply VDD.
As shown in fig. 2, the input small signal Vin is selected as the number of amplifying module stages according to the application requirement, and the external dc power supply provides the forward operating voltage VDD, the filtering rectifying component, the load resistor and the output signal. The HEMT used in the amplifying module is enhanced, when the grid is not applied with bias voltage, the channel between the source and the drain is not conducted, and when the grid is applied with enough voltage, the channel is conducted. Under certain application conditions, enough voltage for starting a channel cannot be applied to the grid electrode, the source electrode is externally connected with a negative bias power supply, and the channel is in an intermediate state between completely cut-off and completely started without changing the grid voltage of the HEMT.
As shown in fig. 3, the single-stage structure of the power amplifier provided by the invention is the most basic structure, and when the gate access voltage is smaller than the normal operation starting voltage of the HEMT, the voltage difference between the gate and the source is in the normal operation voltage range. And when the gate access voltage is higher than the normal working starting voltage of the HEMT, a positive voltage is accessed to the grounding position of the source electrode, so that the voltage difference of the source electrode and the gate electrode is in a normal working voltage range.
Fig. 4 shows a circuit structure added on the basis of the structure of fig. 3, the amplification factor of the original input signal is overlapped by amplifying the output signal of the structure of one stage, according to the experiment, the amplification factor of the single stage structure of the application is about 13 times, and the amplification of one stage is 13 times.
Fig. 5 is a schematic diagram of a circuit structure added to the structure of fig. 4 to unify the input power, and a resistor and diode structure between HEMTs to reduce the loop inductance and noise effects in the circuit loop.
FIG. 6 is an enlarged waveform diagram of FIG. 5 showing a total of four rows of waveforms, the first row being an input signal, in this diagram a voltage signal of 300-302mV, 500kHz frequency, 50% duty cycle; the second, third and fourth wave forms are the primary, secondary and tertiary amplification results respectively; from the results, it can be seen that the waveform of the output signal is increased by three orders of magnitude compared with the input signal through the amplification of the circuit structure.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The principles and embodiments of the present invention have been described herein with reference to specific examples, the description of which is intended only to assist in understanding the methods of the present invention and the core ideas thereof; also, it is within the scope of the present invention to be modified by those of ordinary skill in the art in light of the present teachings. In view of the foregoing, this description should not be construed as limiting the invention.
Claims (8)
1. A power amplifier based on enhanced GaN HEMTs, the power amplifier comprising: the device comprises a signal input module, an amplifying signal output module, an external power supply VDD and a bias voltage module;
the amplifying module includes: a protection resistor unit, a filter device and a plurality of cascaded GaN HEMTs;
The signal input module is connected with the grid electrode of the first GaN HEMT in the amplifying module; the drain electrode of the GaN HEMT is connected with the grid electrode of the next GaN HEMT through the protection resistor unit; the drain electrode of the last GaN HEMT is connected with the amplified signal output module; the drain electrode of the GaN HEMT is connected with an external power supply VDD through a resistor; the source electrode of the GaN HEMT is connected with the filter device; when the GaN HEMT is completely turned on or completely turned off by an input signal output by the signal input module, the source electrode of the GaN HEMT is connected with the bias voltage module; when the input signal output by the signal input module enables the GaN HEMT to be in incomplete opening, the source electrode of the GaN HEMT is grounded, and signal amplification is directly carried out.
2. The power amplifier based on the enhanced GaN HEMTs of claim 1, wherein said GaN HEMT comprises: a substrate, a gate, source and drain electrodes, and a heterojunction conductive channel formed between the source and drain electrodes.
3. The power amplifier based on the enhanced GaN HEMTs of claim 1, wherein the gate, source and drain of the GaN HEMT are of the same side horizontal structure.
4. The power amplifier based on enhanced GaN HEMTs of claim 1 wherein the GaN HEMTs in said amplification block are different and different GaN HEMTs achieve different amplification factors.
5. The power amplifier based on the enhanced GaN HEMTs of claim 1 wherein the single GaN HEMT voltage division variation is an inverse multiple amplification of the input signal.
6. The power amplifier of claim 1, wherein the filter device is a capacitor.
7. The power amplifier based on the enhanced GaN HEMTs of claim 1, wherein said protection resistance unit comprises: a diode and one resistor in parallel with the diode and another resistor in series with the parallel structure.
8. The enhancement-mode GaN HEMTs-based power amplifier of claim 1, further comprising: and a voltage dividing resistor between the drain of the GaN HEMT and an external power supply VDD.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410191229.1A CN118074640A (en) | 2024-02-21 | 2024-02-21 | Power amplifier based on enhancement mode GaN HEMTs |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410191229.1A CN118074640A (en) | 2024-02-21 | 2024-02-21 | Power amplifier based on enhancement mode GaN HEMTs |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118074640A true CN118074640A (en) | 2024-05-24 |
Family
ID=91110718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410191229.1A Pending CN118074640A (en) | 2024-02-21 | 2024-02-21 | Power amplifier based on enhancement mode GaN HEMTs |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN118074640A (en) |
-
2024
- 2024-02-21 CN CN202410191229.1A patent/CN118074640A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA2504979C (en) | Improved rf transistor amplifier linearity using suppressed third order transconductance | |
| CN108270417B (en) | Voltage regulator and integrated circuit | |
| US7342457B2 (en) | Cross-differential amplifier | |
| CN107508558B (en) | Power amplifying circuit | |
| US9825616B2 (en) | Circuit for reducing slope magnitude during increasing and decreasing voltage transitions | |
| US20160056813A1 (en) | Displacement current compensation circuit | |
| CN214626968U (en) | Radio frequency device | |
| EP1719244B1 (en) | Dynamically biased amplifier | |
| WO2020237632A1 (en) | Driving circuit, digital logic circuit, and related apparatus | |
| CN110752829A (en) | Bias circuit and amplifier circuit applied to 5G WiFi communication low-noise amplifier | |
| CN203457110U (en) | High-efficiency variable-gain class-E radio frequency power amplifier | |
| CN118074640A (en) | Power amplifier based on enhancement mode GaN HEMTs | |
| CN111711422A (en) | Circuit of power amplifier | |
| EP2573937A1 (en) | Power amplifier module having bias circuit | |
| CN113839624A (en) | Power amplifier control method, power amplifier control device, power amplification system and storage medium | |
| CN110768630B (en) | Compensation circuit for amplitude modulation to amplitude modulation of radio frequency power amplifier | |
| Mehrotra et al. | 865 MHz switching-speed step-down DC-DC power converter for envelope tracking | |
| JPH0669731A (en) | Low distortion semiconductor amplifier | |
| CN117013968B (en) | Power amplifying circuit and radio frequency power amplifying module | |
| CN114785299B (en) | Ultra-wideband high-linearity high-efficiency power amplifier | |
| CN112367055B (en) | Overvoltage protection circuit, device and equipment | |
| CN220798223U (en) | Gain-digitally controllable low noise amplifier | |
| CN220935146U (en) | Amplifier and radio frequency front end | |
| CN114977806A (en) | Power converter and voltage transformation method | |
| Love et al. | A 5.6-GHz Class-DE power amplifier with reduced voltage stress in 22-nm FDSOI CMOS |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |