CN118073491A - Point light source LED chip and manufacturing method and application thereof - Google Patents
Point light source LED chip and manufacturing method and application thereof Download PDFInfo
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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Abstract
The application relates to the technical field of LEDs, in particular to a point light source LED chip and a manufacturing method and application thereof. The chip comprises a back electrode, a GaAs substrate, a GaAs buffer layer, an N-type DBR layer, an N-type semiconductor layer, an MQW light-emitting layer, a P-type semiconductor layer, an oxidation limiting layer, a transition layer, a GaP current expansion layer, a transparent conductive film layer and a front electrode which are sequentially stacked from bottom to top; the N-type DBR layer comprises AlAs layers and AlGaAs layers which are alternately grown, the front electrode is provided with a light outlet hole, the oxidation limiting layer is provided with an annular oxidation limiting band formed by wet oxidation, the oxidation limiting band is arranged on the outer edge of the oxidation limiting layer, and the oxidation depth of the oxidation limiting band is not more than the edge of the light outlet hole. The point light source LED chip provided by the application can realize accurate adjustment of the brightness of the light source under the low brightness condition.
Description
Technical Field
The invention relates to the technical field of LEDs, in particular to a point light source LED chip and a manufacturing method and application thereof.
Background
The LED light source has the advantages of small volume, light weight, long service life and no pollution, and can adapt to application requirements of different scenes. The point light source is used as a novel application, the front surface of the chip is required to have point-shaped luminescence, the point light source is used as signal detection, gun aiming and the like in a special environment, the chip is required to be applied under different currents, especially, the point-shaped luminescence under lower brightness is realized under microampere level, and the fact that misjudgment is easily caused by the fact that a great error exists in brightness detection by naked eyes and detection equipment, the problem that the brightness intensity regulation and control are difficult in the preparation process of the point light source LED is caused, and the accurate regulation of the brightness of the point light source LED under low brightness is difficult to realize according to the requirements of customers. The traditional LED has the characteristics of overall light emission and high light emission brightness, so that the structure and the preparation process of the point light source LED are greatly different from those of the traditional LED. In view of the foregoing, there is an urgent need to provide a point light source LED and a method for manufacturing the same to solve the above-mentioned problems.
Disclosure of Invention
The invention aims to provide a point light source LED chip and a manufacturing method and application thereof, which are used for solving the technical problems that in the prior art, the brightness intensity of a point light source LED is difficult to regulate and control in the preparation process, and at least one of accurate regulation of the brightness of the point light source LED and overall lighting under low brightness is difficult to realize according to customer requirements.
In order to solve the problems, the technical scheme provided by the invention is as follows:
a first aspect of the present invention provides a point light source LED chip, the chip comprising a back electrode, a GaAs substrate, a GaAs buffer layer, an N-type DBR layer, an N-type semiconductor layer, an MQW light-emitting layer, a P-type semiconductor layer, an oxidation-limiting layer, a transition layer, a GaP current spreading layer, a transparent conductive thin film layer, and a front electrode, which are stacked in this order from bottom to top;
The N-type DBR layer comprises AlAs layers and AlGaAs layers which are alternately grown, the growth logarithm is 15-45 pairs, and the thicknesses of the AlAs layers and the AlGaAs layers are one quarter of the wavelength of the MQW light-emitting layer;
the front electrode is provided with a light outlet hole, the oxidation limiting layer is provided with an annular oxidation limiting band formed by wet oxidation, the oxidation limiting band is positioned at the outer edge of the oxidation limiting layer, and the oxidation depth of the oxidation limiting band is not more than the edge of the light outlet hole;
The GaP current expansion layer adopts a patterning structure, the GaP current expansion layer comprises a GaP base layer and a high doped GaP surface layer, the high doped GaP surface layer is only arranged right below the light emitting hole, the shape of the high doped GaP surface layer is consistent with that of the light emitting hole, and the high doped GaP surface layer is embedded into the transparent conductive film layer.
Further, a patterned shading chromium layer is arranged between the front electrode and the transparent conductive film layer;
The shading chromium layer covers other areas except the light emergent holes of the light emergent surface of the chip, and the coverage area of the front electrode on the chip is consistent with the shading chromium layer;
the thickness of the shading chromium layer is 800-1200 angstroms.
Further, the material layer of the front electrode adopts a Ti layer, a Pt layer and an Au layer which are sequentially arranged, wherein the thickness of the Ti layer is 200 angstroms, the thickness of the Pt layer is 200 angstroms, and the thickness of the Au layer is 30000 angstroms.
Further, the thickness of the oxidation limiting layer is 15-30 nm, alGaAs is adopted as the material of the oxidation limiting layer, and the proportion of Al components is 0.96-0.98.
Further, the transparent conductive film layer is made of ITO, and the thickness of the transparent conductive film layer is 2000-3000 angstroms.
Further, the side walls around the chip further comprise etching channels formed by etching from top to bottom, and the etching depth of the etching channels reaches the upper surface of the N-type NBR layer.
Further, the surface of the etching channel is covered and provided with a SiN passivation layer.
Another aspect of the present invention provides a method for manufacturing the point light source LED chip, including:
S1, providing a GaAs substrate as an epitaxial structure growth substrate;
S2, setting a program on an MOCVD machine table, and sequentially growing a GaAs buffer layer, an N-type DBR layer, an N-type semiconductor layer, an MQW light-emitting layer, a P-type semiconductor layer, an oxidation limiting layer, a transition layer and a GaP current expansion layer on the GaAs substrate to obtain an epitaxial wafer;
S3, on the epitaxial wafer, performing organic cleaning, using positive photoresist as a mask pattern, and performing wet etching by combining dry ICP with a solution to obtain a patterned GaP current expansion layer;
S4, preparing a transparent conductive film layer on the surface of the GaP current expansion layer by using an electron beam evaporation mode through organic cleaning;
S5, preparing a patterned shading chromium layer by using negative photoresist as a mask pattern through organic cleaning and combining a sputtering mode and a negative photoresist stripping technology;
S6, adopting negative photoresist as a mask pattern, and manufacturing a front electrode by combining an electron beam evaporation mode and a negative photoresist stripping technology;
S7, using positive photoresist as a mask pattern, etching an etching channel by using ICP, and oxidizing the oxidation limiting layer from the side by using a wet oxidation technology to form lateral oxidation;
s8, depositing SiN on the surface of the etching channel by utilizing PECVD (plasma enhanced chemical vapor deposition), preparing a SiN passivation layer pattern by utilizing positive photoresist lithography and wet etching technology, and etching SiN which is not protected by photoresist by adopting a fluorine-containing solution to prepare the SiN passivation layer;
S9, manufacturing a back electrode, alloying, cutting and testing the GaAs substrate through mechanical thinning, and manufacturing the point light source LED core particle.
The invention also provides application of the point light source LED chip in serving as a signal detection or gun aiming light source.
Compared with the prior art, the invention has the beneficial effects that:
1. The N-type DBR layer and the oxidation limiting layer are introduced into the epitaxial structure, the brightness of the point light source is regulated by controlling the DBR logarithm, the measurement and calculation of the brightness of point light source products in different batches are realized by the metered DBR logarithm, and the obtained point light source LED brightness is controllable, so that the brightness regulation of the point light source LED can be realized under the conditions of the epitaxial structure and the production line with high similarity. By controlling the lateral oxidation depth of the oxidation limiting layer, on one hand, the electron-hole composite luminescence around the core particle can be effectively avoided, and the overall luminescence of the point light source is reduced; on the other hand, the lateral oxidation depth can be randomly regulated within a certain range, and the current transverse limitation of different degrees can be realized to control the brightness of the light. Therefore, the application can obtain the intensity adjustment of the brightness of the point light source LED in a wider range by controlling the growth logarithm of the N-type DBR layer and combining with the regulation and control of the oxidation depth of the oxidation limiting layer, has more adjustable gears, and can realize the accurate adjustment of the brightness of the point light source LED under low brightness according to the requirements of customers.
2. The patterned GaP current expansion layer is introduced into the point light source LED structure, so that the transverse current limitation can be realized, the electron-hole composite luminescence around the core particle is further avoided, and the overall luminescence of the point light source is reduced. The light-shielding chromium layer is introduced to enhance the adhesiveness between the front electrode and the transparent conductive film layer; on the other hand, the area of the front electrode other than the light exit hole can be shielded from light, and the light emission can be concentrated in the light exit hole.
3. According to the manufacturing method of the point light source LED chip, the logarithm of the N-type DBR layer can be adjusted through epitaxial growth, oxidation of the oxidation limiting layer is completed through wet oxidation after etching is completed, no additional auxiliary program is needed, the point light source LED capable of accurately and effectively adjusting brightness can be manufactured, and the manufacturing process has the advantages of being simple in manufacturing process, easy to control in technological process and stable and controllable in process.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute a limitation on the application. In the drawings:
FIG. 1 is a schematic diagram of a point light source LED chip according to some embodiments of the present application;
Fig. 2 is a schematic structural diagram of a point light source LED chip epitaxial wafer according to some embodiments of the present application;
FIG. 3 is a schematic diagram illustrating a structure of a patterned GaP current spreading layer formed on an epitaxial wafer of a point light source LED chip according to some embodiments of the present application;
FIG. 4 is a schematic view of another view angle structure of a patterned GaP current spreading layer formed on an epitaxial wafer of a point light source LED chip according to some embodiments of the present application;
fig. 5 is a schematic structural diagram of a front electrode formed by an epitaxial wafer of a point light source LED chip according to some embodiments of the present application;
FIG. 6 is a schematic view of another view angle structure of a front electrode formed by an epitaxial wafer of a point light source LED chip according to some embodiments of the present application;
Description of the drawings: 1. a GaAs substrate; 2. A GaAs buffer layer; 3. An N-type DBR layer; 4. an N-type semiconductor layer; 5. an MQW light-emitting layer; 6. a P-type semiconductor layer; 7. an oxidation limiting layer; 8. a transition layer; 9. a GaP current spreading layer; 10. a transparent conductive film layer; 11. a light-shielding chromium layer; 12. a front electrode; 13. etching the channel; 14. an oxidation-limiting belt; 15. a SiN passivation layer; 16. a back electrode; 17. a GaP base layer; 18. a highly doped GaP surface layer; 19. and a light outlet hole.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. The following description of at least one exemplary embodiment is merely exemplary in nature and is in no way intended to limit the application, its application, or uses. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
The relative arrangement of the components and steps, numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present application unless it is specifically stated otherwise. Meanwhile, it should be understood that the sizes of the respective parts shown in the drawings are not drawn in actual scale for convenience of description. Techniques, methods, and apparatus known to one of ordinary skill in the relevant art may not be discussed in detail, but should be considered part of the specification where appropriate. In all examples shown and discussed herein, any specific values should be construed as merely illustrative, and not a limitation. Thus, other examples of the exemplary embodiments may have different values. It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further discussion thereof is necessary in subsequent figures.
In the description of the present application, it should be understood that the terms "first," "second," and the like are used for defining the components, and are merely for convenience in distinguishing the corresponding components, and the terms are not meant to have any special meaning unless otherwise indicated, so that the scope of the present application is not to be construed as being limited.
In the description of the present application, it should be understood that the azimuth or positional relationships indicated by the azimuth terms such as "front, rear, upper, lower, left, right", "lateral, vertical, horizontal", and "top, bottom", etc., are generally based on the azimuth or positional relationships shown in the drawings, merely to facilitate description of the present application and simplify the description, and these azimuth terms do not indicate and imply that the apparatus or elements referred to must have a specific azimuth or be constructed and operated in a specific azimuth, and thus should not be construed as limiting the scope of protection of the present application; the orientation word "inner and outer" refers to inner and outer relative to the contour of the respective component itself.
The application is described in further detail below in connection with specific examples:
Example 1
Fig. 1 is a schematic diagram of a point light source LED chip according to some embodiments of the present application. Specifically, referring to fig. 1, a point light source LED chip of the present application includes a back electrode 16, a GaAs substrate 1, a GaAs buffer layer 2, an N-type DBR layer 3, an N-type semiconductor layer 4, an MQW light-emitting layer 5, a P-type semiconductor layer 6, an oxidation limiting layer 7, a transition layer 8, a GaP current spreading layer 9, a transparent conductive thin film layer 10, and a front electrode 12 stacked in this order from bottom to top; the N-type DBR layer 3 comprises AlAs layers and AlGaAs layers which are alternately grown, the growth logarithm is 15-45 pairs, and the thicknesses of the AlAs layers and the AlGaAs layers are one quarter of the wavelength of the MQW light-emitting layer 5; the front electrode 12 has a light exit hole 19, the oxidation limiting layer 7 has an annular oxidation limiting band 14 formed by wet oxidation, the oxidation limiting band 14 is arranged at the outer edge of the oxidation limiting layer 7, and the oxidation depth of the oxidation limiting band 14 is not more than the edge of the light exit hole 19;
the GaP current expansion layer 9 adopts a patterned structure, the GaP current expansion layer 9 comprises a GaP base layer 17 and a highly doped GaP surface layer 18, the highly doped GaP surface layer 18 is only arranged right below the light emitting hole 19, the shape of the highly doped GaP surface layer 18 is consistent with that of the light emitting hole 19, and the highly doped GaP surface layer 18 is embedded into the transparent conductive film layer 10.
According to the point light source LED structure, the N-type DBR layer 3 and the oxidation limiting layer 7 are introduced into the epitaxial structure, the N-type DBR layer 3 can effectively reflect light emitted by the MQW light emitting layer 5 back to the front surface, in the manufacturing process, the brightness of the point light source is regulated by controlling the DBR logarithm, the more the DBR logarithm is, the better the reflection effect is, the stronger the front surface brightness is, and vice versa. By controlling the lateral oxidation depth of the oxidation limiting layer 7, on one hand, the electron-hole composite luminescence around the core particle can be effectively avoided, and the overall luminescence of the point light source is reduced; on the other hand, the lateral oxidation depth can be randomly regulated within a certain range, the current transverse limitation of different degrees can be realized, and under the same epitaxial structure, the deeper the lateral oxidation depth is, the stronger the front light-emitting brightness is, and vice versa. Therefore, the point light source LED provided by the application can obtain the intensity adjustment of the brightness of the point light source LED in a wider range by controlling the growth logarithm of the N-type DBR layer 3 and combining with the adjustment of the oxidation depth of the oxidation limiting layer 7, has more adjustable gears, and can realize the accurate adjustment of the brightness of the point light source LED under low brightness according to the requirements of customers.
The patterned GaP current expansion layer 9 is introduced into the point light source LED structure, so that the transverse current limitation can be realized, the electron-hole composite luminescence around the core particle is further avoided, and the overall luminescence of the point light source is reduced.
According to some preferred embodiments, a patterned light-shielding chromium layer 11 is further arranged between the front electrode 12 and the transparent conductive film layer 10; the shading chromium layer 11 covers other areas except the light emergent holes 19 of the light emergent surface of the chip, and the coverage area of the front electrode 12 on the chip is consistent with the shading chromium layer 11; the thickness of the light-shielding chromium layer 11 is 800 to 1200 angstroms. The light-shielding chromium layer 11 can serve to enhance the adhesion between the front electrode 12 and the transparent conductive film layer 10; on the other hand, the area of the front electrode 12 other than the light exit hole 19 can be shielded from light, and the light emission can be concentrated in the light exit hole 19.
According to some preferred embodiments, the material layer of the front electrode 12 employs a Ti layer, a Pt layer and an Au layer sequentially disposed, wherein the Ti layer has a thickness of 200 angstroms, the Pt layer has a thickness of 200 angstroms, and the Au layer has a thickness of 30000 angstroms.
According to some preferred embodiments, the thickness of the oxidation limiting layer 7 is 15 nm-30 nm, and the material of the oxidation limiting layer 7 is AlGaAs, wherein the proportion of the Al component is 0.96-0.98.
According to some preferred embodiments, the material of the transparent conductive thin film layer 10 is ITO, and the thickness of the transparent conductive thin film layer 10 is 2000 to 3000 angstroms.
According to some preferred embodiments, the peripheral side walls of the chip further comprise etching channels 13 etched from top to bottom, and the etching depth of the etching channels 13 reaches the upper surface of the N-type DBR layer 3. The surface of the etched channel 13 is covered with a SiN passivation layer 15. The structure can protect epitaxial materials around the core particle from being influenced by moisture on one hand, and reduce the side wall leakage risk on the other hand.
From the above, the point light source LED chip provided by the embodiment of the application has the following advantages:
1. The N-type DBR layer 3 and the oxidation limiting layer 7 are introduced into the epitaxial structure, the brightness of the point light source is regulated by controlling the DBR logarithm, the measurement and calculation of the brightness of point light source products in different batches are realized by the metered DBR logarithm, and the obtained brightness of the point light source LED is controllable, so that the brightness regulation of the point light source LED can be realized under the conditions of the epitaxial structure and the production line with high similarity. By controlling the lateral oxidation depth of the oxidation limiting layer 7, on one hand, the electron-hole composite luminescence around the core particle can be effectively avoided, and the overall luminescence of the point light source is reduced; on the other hand, the lateral oxidation depth can be randomly regulated within a certain range, and the current transverse limitation of different degrees can be realized to control the brightness of the light. Therefore, the application can obtain the intensity adjustment of the brightness of the point light source LED in a wider range by controlling the growth logarithm of the N-type DBR layer 3 and combining with the adjustment of the oxidation depth of the oxidation limiting layer 7, has more adjustable gears, and can realize the accurate adjustment of the brightness of the point light source LED under low brightness according to the requirements of customers.
2. The patterned GaP current expansion layer 9 is introduced into the point light source LED structure, so that the transverse current limitation can be realized, the electron-hole composite luminescence around the core particle is further avoided, and the overall luminescence of the point light source is reduced. The introduction of the light-shielding chromium layer 11 can serve to enhance the adhesion between the front electrode 12 and the transparent conductive film layer 10 on the one hand; on the other hand, the area of the front electrode 12 other than the light exit hole 19 can be shielded from light, and the light emission can be concentrated in the light exit hole 19 area.
Example 2
Referring to fig. 1 to 6, the present embodiment provides a method for manufacturing a point light source LED chip, the method comprising:
Step one, please refer to fig. 2, fig. 2 is a schematic diagram showing an epitaxial structure of a point light source LED chip; providing a GaAs substrate 1 as an epitaxial structure growth substrate, setting a program on a MOCVD machine, sequentially growing a GaAs buffer layer 2, an N-type DBR layer 3, an N-type semiconductor layer 4, an MQW light-emitting layer 5, a P-type semiconductor layer 6, an oxidation limiting layer 7, a transition layer 8 and a GaP current expansion layer 9 on the GaAs substrate 1, wherein the N-type DBR layer 3 is formed by alternately growing AlAs/AlGaAs, the number of the N pairs is N (15 is less than or equal to 45), the thickness of each film layer is one quarter of the wavelength of the MQW light-emitting layer 5, the overall reflectivity is above 60%, and the growth temperature can be selected to be 750-850 ℃; the oxidation limiting layer 7 is made of AlGaAs with the thickness of 15 nm-30 nm and the Al component of 0.96-0.98; the GaP current spreading layer 9 comprises a GaP base layer 17 and a high doped GaP surface layer 18, wherein the thickness of the GaP base layer 17 is 50000 angstroms, the thickness of the high doped GaP surface layer 18 is 1000 angstroms, the doping element is Mg, and the doping concentration is 1E20 cm -3.
Step two, please combine fig. 3 and fig. 4, fig. 3 is a schematic structural diagram of forming a patterned GaP current spreading layer by the point light source LED chip epitaxial wafer, and fig. 4 is a schematic structural diagram of forming another view angle of the patterned GaP current spreading layer by the point light source LED chip epitaxial wafer; on an epitaxial wafer, a positive photoresist is used as a mask pattern, and a patterned GaP current expansion layer 9 pattern is manufactured through dry ICP (inductively coupled plasma) combined with solution wet etching and combined, wherein ICP etching power is 800W, BCl 3 flow is 40sccm, cl 2 flow is 15sccm, HBr flow is 10sccm, N 2 flow is 60sccm, gaP etching liquid is adopted in wet etching, etching time is 40s, and the GaP current expansion layer 9 pattern is matched with the size of a light outlet hole 19;
The following steps three to five are combined with fig. 5 and 6, and fig. 5 is a schematic structural diagram of forming a front electrode by using the epitaxial wafer of the point light source LED chip; fig. 6 is a schematic view of another view angle structure of the front electrode formed by the epitaxial wafer of the point light source LED chip;
Step three, through organic cleaning, ITO material is evaporated on the surface of the patterned GaP current expansion layer 9 by utilizing an electron beam evaporation mode, the evaporation temperature is 150 ℃, the oxygen flow is 8 sccm-13 sccm, and the thickness of the prepared transparent conductive film layer 10 is 2000-3000 angstroms;
Step four: the method comprises the steps of (1) manufacturing a patterned shading chromium layer 11 on the surface of a transparent conductive film layer 10 by using negative photoresist as a mask pattern through organic cleaning and combining a sputtering mode and a negative photoresist stripping technology, wherein the shading chromium layer 11 has a thickness of 1000 angstroms, and the shading chromium layer 11 pattern is uncovered by a light outlet 19 and the rest is fully covered;
Step five: the negative photoresist is used as a mask pattern, and the electron beam evaporation mode and the negative photoresist stripping technology are matched to manufacture the front electrode 12, the material layer of the front electrode 12 is sequentially Ti/Pt/Au, the thickness is respectively 200 angstrom/30000 angstrom, the size of the light emergent hole 19 is matched with the size of the chip, and the size can be set between 25 mu m and 200 mu m according to actual requirements.
The following steps six to eight are combined with fig. 1, and fig. 1 is a schematic diagram of a point light source LED chip structure;
Step six, using positive photoresist as a mask pattern, etching an etching channel 13 by utilizing ICP, oxidizing the oxidation limiting layer 7 from the side surface by utilizing a wet oxidation technology to form lateral oxidation, wherein ICP etching power is 800W, BCl 3 flow is 40sccm, cl 2 flow is 15sccm, HBr flow is 10sccm, N 2 flow is 60sccm, oxidizing the AlGaAs material by utilizing the wet oxidation technology, wherein the oxidation temperature is preferably 380-400 ℃, the flow is 30L/min of N 2/H2, the water vapor is 80g/h, and the pressure is 850mbar, and keeping for 10-25 min; the thickness of the oxidation limiting layer 7 is 20-30 μm;
Step seven: depositing SiN material by PECVD (plasma enhanced chemical vapor deposition) and further using positive photoresist lithography and wet etching technology to form SiN passivation layer 15 patterns, wherein the thickness of SiN passivation layer 15 is 0.5-1 μm, and SiN which is not protected by photoresist is etched by adopting fluorine-containing solution;
step eight: the adjustable point light source LED core particle manufacturing is completed through mechanical thinning of the GaAs substrate 1, manufacturing of the back electrode 16, alloying, cutting by a blade, testing and the like.
From the above, the manufacturing method of the point light source LED chip provided by the embodiment of the application has the following advantages:
1. according to the manufacturing method of the point light source LED chip, the logarithm of the N-type DBR layer 3 can be adjusted through epitaxial growth, oxidation of the oxidation limiting layer 7 is completed through wet oxidation after the etching channel 13 is completed, an additional auxiliary program is not needed, the point light source LED capable of accurately and effectively adjusting the brightness can be manufactured, and the manufacturing process has the advantages of being simple in manufacturing process, easy to control and stable and controllable in process.
2. The point light source LED chip in the above embodiment 1 is obtained by the method for manufacturing a point light source LED chip according to the embodiment of the present application, so that the point light source LED chip in the above embodiment 1 has the same advantages as the point light source LED chip in the above embodiment 1, and will not be described in detail herein.
What is not described in this embodiment can be referred to in the relevant description of the rest of the application.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present application and not for limiting the same; while the application has been described in detail with reference to the preferred embodiments, those skilled in the art will appreciate that: modifications and equivalents of some of the features of the specific embodiments of the present application may be made, and they are all included in the scope of the present application as claimed.
Claims (9)
1. The point light source LED chip is characterized by comprising a back electrode, a GaAs substrate, a GaAs buffer layer, an N-type DBR layer, an N-type semiconductor layer, an MQW light-emitting layer, a P-type semiconductor layer, an oxidation limiting layer, a transition layer, a GaP current expansion layer, a transparent conductive film layer and a front electrode which are sequentially stacked from bottom to top;
The N-type DBR layer comprises AlAs layers and AlGaAs layers which are alternately grown, the growth logarithm is 15-45 pairs, and the thicknesses of the AlAs layers and the AlGaAs layers are one quarter of the wavelength of the MQW light-emitting layer;
the front electrode is provided with a light outlet hole, the oxidation limiting layer is provided with an annular oxidation limiting band formed by wet oxidation, the oxidation limiting band is arranged at the outer edge of the oxidation limiting layer, and the oxidation depth of the oxidation limiting band is not more than the edge of the light outlet hole;
The GaP current expansion layer adopts a patterning structure, the GaP current expansion layer comprises a GaP base layer and a high doped GaP surface layer, the high doped GaP surface layer is only arranged right below the light emitting hole, the shape of the high doped GaP surface layer is consistent with that of the light emitting hole, and the high doped GaP surface layer is embedded into the transparent conductive film layer.
2. The point light source LED chip of claim 1, wherein a patterned light shielding chrome layer is further disposed between said front electrode and said transparent conductive film layer;
The shading chromium layer covers other areas except the light emergent holes of the light emergent surface of the chip, and the coverage area of the front electrode on the chip is consistent with the shading chromium layer;
the thickness of the shading chromium layer is 800-1200 angstroms.
3. The LED chip of claim 1 or 2, wherein the front electrode is formed of a Ti layer, a Pt layer and an Au layer sequentially disposed, wherein the Ti layer has a thickness of 200 a, the Pt layer has a thickness of 200 a, and the Au layer has a thickness of 30000 a.
4. The point light source LED chip of claim 1, wherein the thickness of said oxidation limiting layer is 15nm to 30nm, and said oxidation limiting layer is made of AlGaAs, wherein the Al composition ratio is 0.96 to 0.98.
5. The LED chip of claim 1, wherein said transparent conductive film layer is made of ITO, and said transparent conductive film layer has a thickness of 2000-3000 angstroms.
6. The LED chip of claim 1, wherein said peripheral side walls further comprise etching channels etched from top to bottom, said etching channels having an etching depth reaching an upper surface of said N-type NBR layer.
7. The LED chip of claim 6, wherein said etched channel has a SiN passivation layer over the surface thereof.
8. A method of manufacturing the point light source LED chip according to any one of claims 1 to 7, comprising:
S1, providing a GaAs substrate as an epitaxial structure growth substrate;
S2, setting a program on an MOCVD machine table, and sequentially growing a GaAs buffer layer, an N-type DBR layer, an N-type semiconductor layer, an MQW light-emitting layer, a P-type semiconductor layer, an oxidation limiting layer, a transition layer and a GaP current expansion layer on the GaAs substrate to obtain an epitaxial wafer;
S3, on the epitaxial wafer, performing organic cleaning, using positive photoresist as a mask pattern, and performing wet etching by combining dry ICP with a solution to obtain a patterned GaP current expansion layer;
S4, preparing a transparent conductive film layer on the surface of the GaP current expansion layer by using an electron beam evaporation mode through organic cleaning;
S5, preparing a patterned shading chromium layer by using negative photoresist as a mask pattern through organic cleaning and combining a sputtering mode and a negative photoresist stripping technology;
S6, adopting negative photoresist as a mask pattern, and manufacturing a front electrode by combining an electron beam evaporation mode and a negative photoresist stripping technology;
S7, using positive photoresist as a mask pattern, etching an etching channel by using ICP, and oxidizing the oxidation limiting layer from the side by using a wet oxidation technology to form lateral oxidation;
s8, depositing SiN on the surface of the etching channel by utilizing PECVD (plasma enhanced chemical vapor deposition), preparing a SiN passivation layer pattern by utilizing positive photoresist lithography and wet etching technology, and etching SiN which is not protected by photoresist by adopting a fluorine-containing solution to prepare the SiN passivation layer;
S9, manufacturing a back electrode, alloying, cutting and testing the GaAs substrate through mechanical thinning, and manufacturing the point light source LED core particle.
9. Use of a point light source LED chip according to any one of claims 1 to 7 as a signal detection or gun aiming light source.
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