CN118073345A - Power module - Google Patents

Abstract

The invention discloses a power module, which comprises two half-bridge circuits, wherein multiple functions can be realized only by changing the connection mode of a module terminal piece in an external circuit, and when a first half-bridge positive electrode layer and a second half-bridge positive electrode layer are connected into different circuits, and meanwhile, a second half-bridge alternating-current side electrode layer between first half-bridge alternating-current side electrode layers is connected through an external inductor, the function of a four-switch BUCK-BOOST circuit can be realized; when the first half-bridge positive electrode layer and the second half-bridge positive electrode layer are connected with the same signal, and meanwhile, the second half-bridge alternating-current side electrode layer between the first half-bridge alternating-current side electrode layers is also connected to the same external circuit, the half-bridge circuit function of two chips connected in parallel can be realized, so that the functions of the power module are richer, the application scene is wider, the technical problem that the traditional power module can only realize single circuit function and is difficult to be applied to the application scene with abundant circuit function requirements is solved.

Description

Power module

Technical Field

The invention relates to the technical field of power electronics, in particular to a power module.

Background

With the rapid development of the fields of modern transportation, aerospace, new energy and the like, the power electronic power module (power module for short) is widely applied, and higher requirements are also provided for the functional richness and the application range of the power module. However, the conventional power module generally can only realize a single circuit function, and is difficult to be applied to application scenarios with abundant circuit function requirements, and if other circuit functions are to be realized, redesign production is required, the cost is high, and the application range is small. Therefore, how to integrate multiple circuit functions under the condition of keeping the size of a single power module smaller, so that the power module can realize richer and more flexible functions and wider application range, thereby reducing the production and development costs of the power module, and the power module is a technical problem to be solved urgently by technicians in the field.

Disclosure of Invention

The invention provides a power module which is used for solving the technical problems that the traditional power module can only realize a single circuit function and is difficult to be applied to application scenes with abundant circuit function requirements.

In view of this, the present invention provides a power module, comprising:

The first half-bridge upper bridge arm switch chip is provided with a first control end, a first input end and a first output end;

the first half-bridge upper bridge arm parallel diode chip is provided with a second input end and a second output end;

The upper bridge arm driving metal layer of the first half bridge is connected with the first control end;

The first half-bridge upper bridge arm source electrode layer is connected with the first output end;

the first half-bridge positive electrode layer is connected with the first input end and the second input end respectively;

The first half-bridge lower bridge arm switch chip is provided with a third control end, a third input end and a third output end;

the first half-bridge lower bridge arm parallel diode chip is provided with a fourth input end and a fourth output end;

the first half-bridge lower bridge arm driving metal layer is connected with the third control end;

The first half-bridge lower bridge arm source electrode layer is connected with the third output end;

the first half-bridge alternating-current side electrode layer is respectively connected with the first output end, the second output end, the third input end and the fourth input end;

the second half-bridge upper bridge arm switch chip is provided with a fifth control end, a fifth input end and a fifth output end;

the second half-bridge upper bridge arm parallel diode chip is provided with a sixth input end and a sixth output end;

The second half-bridge upper bridge arm driving metal layer is connected with the fifth control end;

the second half-bridge upper bridge arm source electrode layer is connected with the fifth output end;

The second half-bridge positive electrode layer is connected with the fifth input end and the sixth input end respectively;

The second half-bridge lower bridge arm switch chip is provided with a seventh control end, a seventh input end and a seventh output end;

the second half-bridge lower bridge arm parallel diode chip is provided with an eighth input end and an eighth output end;

The second half-bridge lower bridge arm driving metal layer is connected with the seventh control end;

the second half-bridge lower bridge arm source electrode layer is electrically connected with the seventh output end;

The second half-bridge alternating-current side electrode layer is respectively connected with the fifth output end, the sixth output end, the seventh input end and the eighth input end;

The negative electrode layer is respectively connected with the third output end, the fourth output end, the seventh output end and the eighth output end;

The substrate, the first half-bridge upper arm switch chip, the first half-bridge upper arm drive metal layer, the first half-bridge upper arm source electrode layer, the first half-bridge upper arm parallel diode chip, the first half-bridge positive electrode layer, the first half-bridge lower arm switch chip, the first half-bridge lower arm drive metal layer, the first half-bridge lower arm source electrode layer, the first half-bridge lower arm parallel diode chip, the first half-bridge AC side electrode layer, the second half-bridge upper arm switch chip, the second half-bridge upper arm drive metal layer, the second half-bridge upper arm source electrode layer, the second half-bridge upper arm parallel diode chip, the second half-bridge positive electrode layer, the second half-bridge lower arm switch chip, the second half-bridge lower arm drive metal layer, the second half-bridge lower arm parallel diode chip, the second half-bridge AC side electrode layer, and the negative electrode layer are all disposed on the substrate, the first half-bridge upper bridge arm driving metal layer, the first half-bridge upper bridge arm source electrode layer, the first half-bridge positive electrode layer, the first half-bridge lower bridge arm driving metal layer, the first half-bridge lower bridge arm source electrode layer, the first half-bridge alternating-current side electrode layer, the second half-bridge upper bridge arm driving metal layer, the second half-bridge upper bridge arm source electrode layer, the second half-bridge positive electrode layer, the second half-bridge lower bridge arm driving metal layer, the second half-bridge lower bridge arm source electrode layer, the second half-bridge alternating-current side electrode layer and the negative electrode layer are arranged on the same layer.

Optionally, the first half-bridge upper bridge arm switch chip includes a first IGBT, a gate electrode of the first IGBT is electrically connected to the first half-bridge upper bridge arm driving metal layer as a first control end of the first half-bridge upper bridge arm switch chip, a source electrode of the first IGBT is electrically connected to the first half-bridge upper bridge arm source electrode layer and the first half-bridge ac side electrode layer as a first output end of the first IGBT, and a drain electrode of the first IGBT is electrically connected to the first half-bridge positive electrode layer as a first input end of the first half-bridge upper bridge arm switch chip.

Optionally, the first subhalf bridge arm switch chip includes a second IGBT, a gate electrode of the second IGBT is electrically connected to the first subhalf bridge arm drive metal layer as a third control end of the first subhalf bridge arm switch chip, a source electrode of the second IGBT is electrically connected to the negative electrode layer as a third output end of the first subhalf bridge arm switch chip, and a drain electrode of the second IGBT is electrically connected to the first subhalf bridge ac side electrode layer as a third input end of the first subhalf bridge arm switch chip.

Optionally, the second half-bridge upper bridge arm switch chip includes a third IGBT, a gate electrode of the third IGBT is electrically connected to the second half-bridge upper bridge arm driving metal layer as a fifth control end of the second half-bridge upper bridge arm switch chip, a source electrode of the third IGBT is electrically connected to the second half-bridge upper bridge arm source electrode layer and the second half-bridge ac side electrode layer as a fifth output end of the second half-bridge upper bridge arm switch chip, and a drain electrode of the third IGBT is electrically connected to the second half-bridge positive electrode layer as a fifth input end of the second half-bridge upper bridge arm switch chip.

Optionally, the second half-bridge lower bridge arm switch chip includes a fourth IGBT, a gate electrode of the fourth IGBT is electrically connected to the second half-bridge lower bridge arm driving metal layer as a seventh control end of the second half-bridge lower bridge arm switch chip, a source electrode of the fourth IGBT is electrically connected to the negative electrode layer as a seventh output end of the second half-bridge lower bridge arm switch chip, and a drain electrode of the fourth IGBT is electrically connected to the second half-bridge ac side electrode layer as a seventh input end of the second half-bridge lower bridge arm switch chip.

Optionally, the first half-bridge positive electrode layer and the second half-bridge positive electrode layer are arranged along the second direction and are symmetrical about the first direction central axis;

The first half-bridge alternating-current side electrode layer, the second half-bridge alternating-current side electrode layer and the negative electrode layer are arranged along the second direction and are symmetrical about the central axis of the first direction;

The first half-bridge upper bridge arm source electrode layer, the first half-bridge upper bridge arm driving electrode layer, the second half-bridge upper bridge arm source electrode layer and the second half-bridge upper bridge arm driving electrode layer are arranged along the second direction and are symmetrical about the central axis of the first direction;

The first half-bridge lower bridge arm source electrode layer, the first half-bridge lower bridge arm driving electrode layer, the second half-bridge lower bridge arm source electrode layer and the second half-bridge lower bridge arm driving electrode layer are arranged along the second direction and are symmetrical about the central axis of the first direction.

Optionally, the first half-bridge upper bridge arm switch chip and the first half-bridge upper bridge arm parallel diode chip are arranged on one side of the first half-bridge positive electrode layer, which is away from the substrate;

The first half-bridge lower bridge arm switch chip and the first half-bridge lower bridge arm parallel diode chip are arranged on one side of the first half-bridge alternating current side electrode layer, which is away from the substrate.

Optionally, the second half-bridge upper bridge arm switch chip and the second half-bridge upper bridge arm parallel diode chip are arranged on one side of the second half-bridge positive electrode layer, which is away from the substrate;

The second half-bridge lower bridge arm switch chip and the second half-bridge lower bridge arm parallel diode chip are arranged on one side of the second half-bridge alternating current side electrode layer, which is away from the substrate.

Optionally, the method further comprises:

The first connecting piece is electrically connected with the first output end of the first half-bridge upper bridge arm switch chip, the second output end of the first half-bridge upper bridge arm parallel diode chip and the first half-bridge alternating-current side electrode layer respectively;

The second connecting piece is electrically connected with the third output end of the first half-bridge lower bridge arm switch chip, the fourth output end of the first half-bridge lower bridge arm parallel diode chip and the negative electrode layer respectively;

The third connecting piece is electrically connected with the fifth output end of the switch chip of the upper bridge arm of the second half bridge, the sixth output end of the parallel diode chip of the upper bridge arm of the second half bridge and the electrode layer of the alternating current side of the second half bridge respectively;

And the fourth connecting piece is respectively and electrically connected with the seventh output end of the second half-bridge lower bridge arm switch chip, the eighth output end of the second half-bridge lower bridge arm parallel diode chip and the negative electrode layer.

Optionally, the method further comprises: a first terminal member, a second terminal member, a third terminal member, a fourth terminal member, a fifth terminal member, a sixth terminal member, a seventh terminal member, an eighth terminal member, a ninth terminal member, a tenth terminal member, an eleventh terminal member, a twelfth terminal member, and a thirteenth terminal member;

One end of the first terminal piece is electrically connected with the first half-bridge positive electrode layer, and the other end of the first terminal piece extends above the substrate;

One end of the second terminal piece is electrically connected with the first half-bridge alternating-current side electrode layer, and the other end of the second terminal piece extends above the substrate;

one end of the third terminal piece is electrically connected with the negative electrode layer, and the other end of the third terminal piece extends above the substrate;

one end of the fourth terminal piece is electrically connected with the second half-bridge alternating-current side electrode layer, and the other end of the fourth terminal piece extends above the substrate;

One end of the fifth terminal piece is electrically connected with the second half-bridge positive electrode layer, and the other end of the fifth terminal piece extends above the substrate;

one end of the sixth terminal piece is electrically connected with the source electrode layer of the upper bridge arm of the first half bridge, and the other end of the sixth terminal piece extends above the substrate;

one end of the seventh terminal piece is electrically connected with the upper bridge arm driving electrode layer of the first half bridge, and the other end of the seventh terminal piece extends above the substrate;

one end of the eighth terminal piece is electrically connected with the source electrode layer of the lower bridge arm of the first half bridge, and the other end of the eighth terminal piece extends above the substrate;

one end of the ninth terminal piece is electrically connected with the first half-bridge lower bridge arm driving electrode layer, and the other end of the ninth terminal piece extends above the substrate;

one end of the twelfth terminal piece is electrically connected with the source electrode layer of the upper bridge arm of the second half bridge, and the other end of the twelfth terminal piece extends above the substrate;

one end of the thirteenth terminal piece is electrically connected with the upper bridge arm driving electrode layer of the second half bridge, and the other end of the thirteenth terminal piece extends above the substrate;

One end of the eleventh terminal piece is electrically connected with the source electrode layer of the lower bridge arm of the second half bridge, and the other end of the eleventh terminal piece extends above the substrate;

One end of the tenth terminal piece is electrically connected with the lower bridge arm driving electrode layer of the second half bridge, and the other end of the tenth terminal piece extends above the substrate;

One end of the eleventh terminal piece is electrically connected with the source electrode layer of the lower bridge arm of the second half bridge, and the other end of the eleventh terminal piece extends above the substrate;

one end of the twelfth terminal piece is electrically connected with the source electrode layer of the upper bridge arm of the second half bridge, and the other end of the twelfth terminal piece extends above the substrate;

One end of the thirteenth terminal piece is electrically connected with the upper bridge arm driving electrode layer of the second half bridge, and the other end of the thirteenth terminal piece extends above the substrate.

From the above technical solution, the power module provided by the invention has the following advantages:

The power module provided by the invention comprises two half-bridge circuits, and can realize multiple functions only by changing the connection mode of the module terminal piece on an external circuit. The first half-bridge corresponding loop is: the first half bridge positive electrode layer, the first half bridge upper bridge arm switch chip, the first half bridge upper bridge arm parallel diode chip, the first half bridge alternating current side electrode layer, the first half bridge lower bridge arm switch chip, the first half bridge lower bridge arm parallel diode chip and the negative electrode layer; the second half-bridge corresponding loop is: the second half-bridge positive electrode layer, the second half-bridge upper bridge arm switch chip, the second half-bridge upper bridge arm parallel diode chip, the second half-bridge alternating current side electrode layer, the second half-bridge lower bridge arm switch chip and the second half-bridge lower bridge arm parallel diode chip and the negative electrode layer. When the first half-bridge positive electrode layer and the second half-bridge positive electrode layer are connected into different circuits, and meanwhile, the second half-bridge alternating-current side electrode layer between the first half-bridge alternating-current side electrode layers is connected through an external inductor, the four-switch BUCK-BOOST circuit function can be realized; when the first half-bridge positive electrode layer and the second half-bridge positive electrode layer are connected with the same signal, and meanwhile, the second half-bridge alternating-current side electrode layer between the first half-bridge alternating-current side electrode layers is also connected to the same external circuit, the half-bridge circuit function of two chips connected in parallel can be realized, so that the functions of the power module are richer, the application scene is wider, the technical problem that the traditional power module can only realize single circuit function and is difficult to be applied to the application scene with abundant circuit function requirements is solved.

Drawings

For a clearer description of embodiments of the invention or of solutions according to the prior art, the figures which are used in the description of the embodiments or of the prior art will be briefly described, it being obvious that the figures in the description below are only some embodiments of the invention, from which, without the aid of inventive efforts, other relevant figures can be obtained for a person skilled in the art.

Fig. 1 is a schematic structural diagram of a power module according to an embodiment of the present invention;

Fig. 2 is a schematic structural diagram of a power module according to an embodiment of the present invention;

fig. 3 is a schematic view of a terminal assembly mounting structure of a power module according to an embodiment of the present invention.

Detailed Description

In order to make the present invention better understood by those skilled in the art, the following description will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.

For ease of understanding, referring to fig. 1, the present invention provides an embodiment of a power module, including:

The first half-bridge upper bridge arm switch chip (19), the first half-bridge upper bridge arm switch chip (19) is provided with a first control end, a first input end and a first output end;

the first half-bridge upper bridge arm parallel diode chip (20) is provided with a second input end and a second output end;

The first half-bridge upper bridge arm driving metal layer (2), and the first half-bridge upper bridge arm driving metal layer (2) is connected with the first control end;

the first half-bridge upper bridge arm source electrode layer (1), and the first half-bridge upper bridge arm source electrode layer (1) is connected with the first output end;

the first half-bridge positive electrode layer (3), the first half-bridge positive electrode layer (3) is connected with the first input end and the second input end respectively;

The first half-bridge lower bridge arm switch chip (17), and the first half-bridge lower bridge arm switch chip (17) is provided with a third control end, a third input end and a third output end;

the first half-bridge lower bridge arm parallel diode chip (18), and the first half-bridge lower bridge arm parallel diode chip (18) is provided with a fourth input end and a fourth output end;

The first half-bridge lower bridge arm driving metal layer (14), and the first half-bridge lower bridge arm driving metal layer (14) is connected with the third control end;

the first half-bridge lower bridge arm source electrode layer (15), and the first half-bridge lower bridge arm source electrode layer (15) is connected with the third output end;

the first half-bridge alternating-current side electrode layer (16), and the first half-bridge alternating-current side electrode layer (16) is respectively connected with the first output end, the second output end, the third input end and the fourth input end;

The second half-bridge upper bridge arm switch chip (7), the second half-bridge upper bridge arm switch chip (7) is provided with a fifth control end, a fifth input end and a fifth output end;

The second half-bridge upper bridge arm parallel diode chip (8), and the second half-bridge upper bridge arm parallel diode chip (8) is provided with a sixth input end and a sixth output end;

the second half-bridge upper bridge arm driving metal layer (5), and the second half-bridge upper bridge arm driving metal layer (5) is connected with the fifth control end;

the second half-bridge upper bridge arm source electrode layer (6), and the second half-bridge upper bridge arm source electrode layer (6) is connected with the fifth output end;

A second half-bridge positive electrode layer (4), the second half-bridge positive electrode layer (4) being connected to the fifth input terminal and the sixth input terminal, respectively;

The second half-bridge lower bridge arm switch chip (11), and the second half-bridge lower bridge arm switch chip (11) is provided with a seventh control end, a seventh input end and a seventh output end;

The second half-bridge lower bridge arm parallel diode chip (10), and the second half-bridge lower bridge arm parallel diode chip (10) is provided with an eighth input end and an eighth output end;

the second half-bridge lower bridge arm driving metal layer (13), and the second half-bridge lower bridge arm driving metal layer (13) is connected with the seventh control end;

The second half-bridge lower bridge arm source electrode layer (12), and the second half-bridge lower bridge arm source electrode layer (12) is electrically connected with the seventh output end;

the second half-bridge alternating-current side electrode layer (9), and the second half-bridge alternating-current side electrode layer (9) is respectively connected with the fifth output end, the sixth output end, the seventh input end and the eighth input end;

A negative electrode layer (21), the negative electrode layer (21) being connected to the third output terminal, the fourth output terminal, the seventh output terminal, and the eighth output terminal, respectively;

A substrate (22), a first half-bridge upper arm switch chip (19), a first half-bridge upper arm drive metal layer (2), a first half-bridge upper arm source electrode layer (1), a first half-bridge upper arm parallel diode chip (20), a first half-bridge positive electrode layer (3), a first half-bridge lower arm switch chip (17), a first half-bridge lower arm drive metal layer (14), a first half-bridge lower arm source electrode layer (15), a first half-bridge lower arm parallel diode chip (18), a first half-bridge alternating current side electrode layer (16), a second half-bridge upper arm switch chip (7), a second half-bridge upper arm drive metal layer (5), a second half-bridge upper arm source electrode layer (6), a second half-bridge upper arm parallel diode chip (8), a second half-bridge positive electrode layer (4), a second half-bridge lower arm switch chip (11), a second half-bridge lower drive metal layer (13), a second half-bridge lower arm source electrode layer (12), a second half-bridge lower arm parallel diode chip (10), a second half-bridge alternating current side electrode layer (9), a second half-bridge negative electrode layer (21) are arranged on the substrate (22), and the first half-bridge upper arm drive metal layer (14), the first half-bridge upper arm drive metal layer (2), the first half-bridge upper arm layer (2) and the first half-bridge upper arm drive metal layer (2) are arranged on the substrate (1) The first half-bridge alternating-current side electrode layer (16), the second half-bridge upper bridge arm driving metal layer (5), the second half-bridge upper bridge arm source electrode layer (6), the second half-bridge positive electrode layer (4), the second half-bridge lower bridge arm driving metal layer (13), the second half-bridge lower bridge arm source electrode layer (12), the second half-bridge alternating-current side electrode layer (9) and the negative electrode layer (21) are arranged on the same layer.

In the embodiment of the invention, the corresponding loop of the first half-bridge is as follows: the first half bridge positive electrode layer (3), the first half bridge upper bridge arm switch chip (19), the first half bridge upper bridge arm parallel diode chip (20), the first half bridge alternating current side electrode layer (16), the first half bridge lower bridge arm switch chip (17), the first half bridge lower bridge arm parallel diode chip (18) and the negative electrode layer (21); the second half-bridge corresponding loop is: the second half-bridge positive electrode layer (4) -the second half-bridge upper bridge arm switch chip (7), the second half-bridge upper bridge arm parallel diode chip (8) -the second half-bridge alternating-current side electrode layer (9) -the second half-bridge lower bridge arm switch chip (11), the second half-bridge lower bridge arm parallel diode chip (10) -the negative electrode layer (21). When the first half-bridge positive electrode layer (3) and the second half-bridge positive electrode layer (4) are connected into different circuits, and meanwhile, the second half-bridge alternating-current side electrode layer (9) between the first half-bridge alternating-current side electrode layers (16) is connected through an external inductor, the four-switch BUCK-BOOST circuit function can be realized; when the first half-bridge positive electrode layer (3) and the second half-bridge positive electrode layer (4) are connected with the same signal, and meanwhile, the second half-bridge alternating-current side electrode layer (9) between the first half-bridge alternating-current side electrode layers (16) is also connected to the same external circuit, the half-bridge circuit function of two chips connected in parallel can be realized, so that the function of the power module is richer, and the application scene is wider.

In an application scenario, the first half-bridge upper bridge arm switch chip (19) may include a first IGBT, a gate electrode of the first IGBT is electrically connected to the first half-bridge upper bridge arm driving metal layer (2) as a first control end of the first half-bridge upper bridge arm switch chip (19), a source electrode of the first IGBT is electrically connected to the first half-bridge upper bridge arm source electrode layer (1) and the first half-bridge ac side electrode layer (16) as a first output end of the first half-bridge upper bridge arm switch chip (19), and a drain electrode of the first IGBT is electrically connected to the first half-bridge positive electrode layer (3) as a first input end of the first half-bridge upper bridge arm switch chip (19). The first half-bridge lower bridge arm switch chip (17) may include a second IGBT, a gate electrode of the second IGBT is electrically connected to the first half-bridge lower bridge arm drive metal layer (14) as a third control end of the first half-bridge lower bridge arm switch chip (17), a source electrode of the second IGBT is electrically connected to the negative electrode layer (21) as a third output end of the first half-bridge lower bridge arm switch chip (17), and a drain electrode of the second IGBT is electrically connected to the first half-bridge ac side electrode layer (16) as a third input end of the first half-bridge lower bridge arm switch chip (17). The second half-bridge upper bridge arm switch chip (7) may include a third IGBT, a gate electrode of the third IGBT is electrically connected to the second half-bridge upper bridge arm drive metal layer (5) as a fifth control end of the second half-bridge upper bridge arm switch chip (7), a source electrode of the third IGBT is electrically connected to the second half-bridge upper bridge arm source electrode layer (6) and the second half-bridge ac side electrode layer (9) as a fifth output end of the second half-bridge upper bridge arm switch chip (7), and a drain electrode of the third IGBT is electrically connected to the second half-bridge positive electrode layer (4) as a fifth input end of the second half-bridge upper bridge arm switch chip (7). The second half-bridge lower bridge arm switch chip (11) may include a fourth IGBT, a gate electrode of the fourth IGBT is electrically connected to the second half-bridge lower bridge arm drive metal layer (13) as a seventh control end of the second half-bridge lower bridge arm switch chip (11), a source electrode of the fourth IGBT is electrically connected to the negative electrode layer (21) as a seventh output end of the second half-bridge lower bridge arm switch chip (11), and a drain electrode of the fourth IGBT is electrically connected to the second half-bridge alternating current side electrode layer (9) as a seventh input end of the second half-bridge lower bridge arm switch chip (11).

In other application scenarios, other switching transistors may be used instead of IGBT devices, such as transistors or MOS transistors.

In one embodiment, the first half-bridge positive electrode layer (3) and the second half-bridge positive electrode layer (4) are arranged along the second direction and are symmetrical about the first direction central axis; the first half-bridge alternating-current side electrode layer (16), the second half-bridge alternating-current side electrode layer (9) and the negative electrode layer (21) are arranged along the second direction and are symmetrical about the central axis of the first direction; the first half-bridge upper bridge arm source electrode layer (1), the first half-bridge upper bridge arm driving electrode layer (2), the second half-bridge upper bridge arm source electrode layer (6) and the second half-bridge upper bridge arm driving electrode layer (5) are arranged along a second direction and are symmetrical about a central axis of the first direction; the first half-bridge lower bridge arm source electrode layer (15), the first half-bridge lower bridge arm driving electrode layer (14), the second half-bridge lower bridge arm source electrode layer (12) and the second half-bridge lower bridge arm driving electrode layer (13) are arranged along the second direction and are symmetrical about the central axis of the first direction.

In one embodiment, a first half-bridge upper leg switch chip (19), a first half-bridge upper leg parallel diode chip (20) are disposed on a side of the first half-bridge positive electrode layer (3) facing away from the substrate (22); the first half-bridge lower bridge arm switch chip (17) and the first half-bridge lower bridge arm parallel diode chip (18) are arranged on one side of the first half-bridge alternating current side electrode layer (16) away from the substrate (22). The second half-bridge upper bridge arm switch chip (7) and the second half-bridge upper bridge arm parallel diode chip (8) are arranged on one side of the second half-bridge positive electrode layer (4) away from the substrate (22); the second half-bridge lower bridge arm switch chip (11) and the second half-bridge lower bridge arm parallel diode chip (10) are arranged on one side of the second half-bridge alternating current side electrode layer (9) away from the substrate (22).

As shown in fig. 2, the power module further includes: the first connecting piece (24), the first connecting piece (24) respectively with first half bridge upper bridge arm switch chip (19) first output, first half bridge upper bridge arm parallel diode chip (20) second output and first half bridge alternating current side electrode layer (16) electricity connect. The second connecting piece (23), the second connecting piece (23) is connected with the third output end of the first half-bridge lower bridge arm switch chip (17), the fourth output end of the first half-bridge lower bridge arm parallel diode chip (18) and the negative electrode layer (21) respectively. The third connecting piece (21), the third connecting piece (21) is connected with the fifth output end of the second half-bridge upper bridge arm switch chip (7), the sixth output end of the second half-bridge upper bridge arm parallel diode chip (8) and the second half-bridge alternating current side electrode layer (9) respectively. The fourth connecting piece (22), fourth connecting piece (22) are connected with the seventh output end of second half-bridge lower bridge arm switch chip (11), the eighth output end of second half-bridge lower bridge arm parallel diode chip (10) and negative electrode layer (21) electricity respectively. The first connecting piece (24), the second connecting piece (23), the third connecting piece (21) and the fourth connecting piece (22) can be power bonding wires, and the first connecting piece (24), the second connecting piece (23), the third connecting piece (21) and the fourth connecting piece (22) comprise a plurality of source electrode power bonding wires so as to improve the electrical performance. The first connecting piece (24), the second connecting piece (23), the third connecting piece (21) and the fourth connecting piece (22) can also be metal sheets so as to improve the electrical performance.

The first half-bridge upper bridge arm driving metal layer (2) is electrically connected with a first control end of the first half-bridge upper bridge arm switch chip (19) through a connecting piece (such as a bonding wire and the like) to provide a driving signal for the first control end of the first half-bridge upper bridge arm switch chip (19); the first half-bridge upper bridge arm source electrode layer (1) is electrically connected with a first output end of the first half-bridge upper bridge arm switch chip (19) through a connecting piece (such as a bonding wire and the like) so as to form a Kelvin source electrode; the first half-bridge lower arm driving metal layer (14) is electrically connected with the third control end of the first half-bridge lower arm switch chip (17) through a connecting piece (such as a bonding wire and the like) and provides a driving signal for the third control end of the first half-bridge lower arm switch chip (17); the first half-bridge lower bridge arm source electrode layer (15) is electrically connected with the third output end of the first half-bridge lower bridge arm switch chip (17) through a connecting piece (such as a bonding wire and the like) so as to form a Kelvin source electrode; the second half-bridge upper bridge arm driving metal layer (5) is electrically connected with a fifth control end of the second half-bridge upper bridge arm switch chip (7) through a connecting piece (such as a bonding wire and the like) to provide a driving signal for the fifth control end of the second half-bridge upper bridge arm switch chip (7); the second half-bridge upper bridge arm source electrode layer (6) is electrically connected with a fifth output end of the second half-bridge upper bridge arm switch chip (7) through a connecting piece (such as a bonding wire and the like) so as to form a Kelvin source electrode; the second half-bridge lower bridge arm driving metal layer (13) is electrically connected with a seventh control end of the second half-bridge lower bridge arm switch chip (11) through a connecting piece (such as a bonding wire and the like) and provides a driving signal for the seventh control end of the second half-bridge lower bridge arm switch chip (11); the second half-bridge lower bridge arm source electrode layer (12) is electrically connected with a seventh output end of the second half-bridge lower bridge arm switch chip (11) through a connecting piece (such as a bonding wire and the like) so as to form a Kelvin source electrode.

In one embodiment, as shown in fig. 3, the power module may further include a first terminal piece (27), a second terminal piece (35), a third terminal piece (36), a fourth terminal piece (30), a fifth terminal piece (28), a sixth terminal piece (25), a seventh terminal piece (26), an eighth terminal piece (34), a ninth terminal piece (33), a tenth terminal piece (32), an eleventh terminal piece (31), a twelfth terminal piece (37), and a thirteenth terminal piece (29); one end of the first terminal piece (27) is electrically connected with the first half-bridge positive electrode layer (3), and the other end of the first terminal piece (27) extends out of the upper part of the substrate (22) and is used for realizing that the first half-bridge positive electrode layer (3) is connected with an electric signal from the outside of the power module; one end of the second terminal piece (35) is electrically connected with the first half-bridge alternating-current side electrode layer (16), and the other end of the second terminal piece (35) extends above the substrate (22) and is used for realizing that the first half-bridge alternating-current side electrode layer (16) is connected with an electric signal from the outside of the power module; one end of the third terminal piece (36) is electrically connected with the negative electrode layer (21), and the other end of the third terminal piece (36) extends above the substrate (22) and is used for realizing the access of the negative electrode layer (21) to an electric signal from the outside of the power module; one end of the fourth terminal piece (30) is electrically connected with the second half-bridge alternating-current side electrode layer (9), and the other end of the fourth terminal piece (30) extends above the substrate (22) and is used for realizing the access of the second half-bridge alternating-current side electrode layer (9) to an electric signal from the outside of the power module; one end of the fifth terminal piece (28) is electrically connected with the second half-bridge positive electrode layer (4), and the other end of the fifth terminal piece (28) extends above the substrate (22) and is used for realizing that the second half-bridge positive electrode layer (4) is connected with an electric signal from the outside of the power module; one end of the sixth terminal piece (25) is electrically connected with the first half-bridge upper bridge arm source electrode layer (1), and the other end of the sixth terminal piece (25) extends above the substrate (22) and is used for realizing that the first half-bridge upper bridge arm source electrode layer (1) is connected to the outside of the power module so as to form a Kelvin source electrode; one end of a seventh terminal piece (26) is electrically connected with the first half-bridge upper bridge arm driving electrode layer (2), and the other end of the seventh terminal piece (26) extends above the substrate (22) and is used for enabling the first half-bridge upper bridge arm driving electrode layer (2) to be connected with an upper bridge arm driving signal from the outside of the power module and providing a first control end driving signal of a first half-bridge upper bridge arm switch chip (19); one end of the eighth terminal piece (34) is electrically connected with the first half-bridge lower bridge arm source electrode layer (15), and the other end of the eighth terminal piece (34) extends above the substrate (22) and is used for realizing that the first half-bridge lower bridge arm source electrode layer (15) is connected to the outside of the power module so as to form a Kelvin source electrode; one end of a ninth terminal piece (33) is electrically connected with the first half-bridge lower bridge arm driving electrode layer (14), and the other end of the ninth terminal piece (33) extends above the substrate (22) and is used for enabling the first half-bridge lower bridge arm driving electrode layer (14) to be connected with a lower bridge arm driving signal from the outside of the power module and providing a third control end driving signal of the first half-bridge lower bridge arm switch chip (17); one end of a twelfth terminal piece (37) is electrically connected with the second half-bridge upper bridge arm source electrode layer (6), and the other end of the twelfth terminal piece (37) extends above the substrate (22) and is used for realizing that the second half-bridge upper bridge arm source electrode layer (6) is connected to the outside of the power module so as to form a Kelvin source electrode; one end of the thirteenth terminal piece (29) is electrically connected with the second half-bridge upper bridge arm driving electrode layer (5), and the other end of the thirteenth terminal piece (29) extends above the substrate (22) and is used for realizing that the second half-bridge upper bridge arm driving electrode layer (5) is connected with an upper bridge arm driving signal from the outside of the power module and providing a fifth control end driving signal of the second half-bridge upper bridge arm switch chip (7); one end of the eleventh terminal piece (31) is electrically connected with the second half-bridge lower bridge arm source electrode layer (12), and the other end of the eleventh terminal piece (31) extends above the substrate (22) and is used for realizing that the second half-bridge lower bridge arm source electrode layer (12) is connected to the outside of the power module so as to form a Kelvin source electrode; one end of a tenth terminal piece (32) is electrically connected with the second half-bridge lower bridge arm driving electrode layer (13), and the other end of the tenth terminal piece (32) extends above the substrate (22) and is used for enabling the second half-bridge lower bridge arm driving electrode layer (13) to be connected with a lower bridge arm driving signal from the outside of the power module and providing a seventh control end driving signal of the second half-bridge lower bridge arm switch chip (11).

The first terminal piece (27), the second terminal piece (35), the third terminal piece (36), the fourth terminal piece (30), the fifth terminal piece (28), the sixth terminal piece (25), the seventh terminal piece (26), the eighth terminal piece (34), the ninth terminal piece (33), the tenth terminal piece (32), the eleventh terminal piece (31), the twelfth terminal piece (37) and the thirteenth terminal piece (29) are led out to the upper side (the side away from the substrate) of the substrate (22), so that the power module is connected with a circuit board carrying the power module conveniently, and the connecting path between the power module and the circuit board is shortened.

The power module provided by the invention comprises two half-bridge circuits, and can realize multiple functions only by changing the connection mode of the module terminal piece on an external circuit. The first half-bridge corresponding loop is: the first half bridge positive electrode layer, the first half bridge upper bridge arm switch chip, the first half bridge upper bridge arm parallel diode chip, the first half bridge alternating current side electrode layer, the first half bridge lower bridge arm switch chip, the first half bridge lower bridge arm parallel diode chip and the negative electrode layer; the second half-bridge corresponding loop is: the second half-bridge positive electrode layer, the second half-bridge upper bridge arm switch chip, the second half-bridge upper bridge arm parallel diode chip, the second half-bridge alternating current side electrode layer, the second half-bridge lower bridge arm switch chip and the second half-bridge lower bridge arm parallel diode chip and the negative electrode layer. When the first half-bridge positive electrode layer and the second half-bridge positive electrode layer are connected into different circuits, and meanwhile, the second half-bridge alternating-current side electrode layer between the first half-bridge alternating-current side electrode layers is connected through an external inductor, the four-switch BUCK-BOOST circuit function can be realized; when the first half-bridge positive electrode layer and the second half-bridge positive electrode layer are connected with the same signal, and meanwhile, the second half-bridge alternating-current side electrode layer between the first half-bridge alternating-current side electrode layers is also connected to the same external circuit, the half-bridge circuit function of two chips connected in parallel can be realized, so that the functions of the power module are richer, the application scene is wider, the technical problem that the traditional power module can only realize single circuit function and is difficult to be applied to the application scene with abundant circuit function requirements is solved.

In describing embodiments of the present invention, it should be noted that, unless explicitly stated and limited otherwise, the terms "coupled," "coupled," and "connected" should be construed broadly, and may be either a fixed connection, a removable connection, or an integral connection, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium. The specific meaning of the above terms in embodiments of the present invention will be understood in detail by those of ordinary skill in the art.

The terms "first," "second," "third," "fourth," and the like in this disclosure, if any, are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented, for example, in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.

The above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims (10)

1. A power module, comprising:

The first half-bridge upper bridge arm switch chip is provided with a first control end, a first input end and a first output end;

the first half-bridge upper bridge arm parallel diode chip is provided with a second input end and a second output end;

The upper bridge arm driving metal layer of the first half bridge is connected with the first control end;

The first half-bridge upper bridge arm source electrode layer is connected with the first output end;

the first half-bridge positive electrode layer is connected with the first input end and the second input end respectively;

The first half-bridge lower bridge arm switch chip is provided with a third control end, a third input end and a third output end;

the first half-bridge lower bridge arm parallel diode chip is provided with a fourth input end and a fourth output end;

the first half-bridge lower bridge arm driving metal layer is connected with the third control end;

The first half-bridge lower bridge arm source electrode layer is connected with the third output end;

the first half-bridge alternating-current side electrode layer is respectively connected with the first output end, the second output end, the third input end and the fourth input end;

the second half-bridge upper bridge arm switch chip is provided with a fifth control end, a fifth input end and a fifth output end;

the second half-bridge upper bridge arm parallel diode chip is provided with a sixth input end and a sixth output end;

The second half-bridge upper bridge arm driving metal layer is connected with the fifth control end;

the second half-bridge upper bridge arm source electrode layer is connected with the fifth output end;

The second half-bridge positive electrode layer is connected with the fifth input end and the sixth input end respectively;

The second half-bridge lower bridge arm switch chip is provided with a seventh control end, a seventh input end and a seventh output end;

the second half-bridge lower bridge arm parallel diode chip is provided with an eighth input end and an eighth output end;

The second half-bridge lower bridge arm driving metal layer is connected with the seventh control end;

the second half-bridge lower bridge arm source electrode layer is electrically connected with the seventh output end;

The second half-bridge alternating-current side electrode layer is respectively connected with the fifth output end, the sixth output end, the seventh input end and the eighth input end;

The negative electrode layer is respectively connected with the third output end, the fourth output end, the seventh output end and the eighth output end;

The substrate, the first half-bridge upper arm switch chip, the first half-bridge upper arm drive metal layer, the first half-bridge upper arm source electrode layer, the first half-bridge upper arm parallel diode chip, the first half-bridge positive electrode layer, the first half-bridge lower arm switch chip, the first half-bridge lower arm drive metal layer, the first half-bridge lower arm source electrode layer, the first half-bridge lower arm parallel diode chip, the first half-bridge AC side electrode layer, the second half-bridge upper arm switch chip, the second half-bridge upper arm drive metal layer, the second half-bridge upper arm source electrode layer, the second half-bridge upper arm parallel diode chip, the second half-bridge positive electrode layer, the second half-bridge lower arm switch chip, the second half-bridge lower arm drive metal layer, the second half-bridge lower arm parallel diode chip, the second half-bridge AC side electrode layer, and the negative electrode layer are all disposed on the substrate, the first half-bridge upper bridge arm driving metal layer, the first half-bridge upper bridge arm source electrode layer, the first half-bridge positive electrode layer, the first half-bridge lower bridge arm driving metal layer, the first half-bridge lower bridge arm source electrode layer, the first half-bridge alternating-current side electrode layer, the second half-bridge upper bridge arm driving metal layer, the second half-bridge upper bridge arm source electrode layer, the second half-bridge positive electrode layer, the second half-bridge lower bridge arm driving metal layer, the second half-bridge lower bridge arm source electrode layer, the second half-bridge alternating-current side electrode layer and the negative electrode layer are arranged on the same layer.

2. The power module of claim 1, wherein the first half-bridge upper leg switch chip comprises a first IGBT, a gate electrode of the first IGBT is electrically connected to the first half-bridge upper leg drive metal layer as a first control terminal of the first half-bridge upper leg switch chip, a source electrode of the first IGBT is electrically connected to the first half-bridge upper leg source electrode layer and the first half-bridge ac side electrode layer as a first output terminal of the first half-bridge upper leg switch chip, and a drain electrode of the first IGBT is electrically connected to the first half-bridge positive electrode layer as a first input terminal of the first half-bridge upper leg switch chip.

3. The power module of claim 2, wherein the first underbridge switching chip comprises a second IGBT, a gate electrode of the second IGBT is electrically connected to the first underbridge driving metal layer as a third control terminal of the first underbridge switching chip, a source electrode of the second IGBT is electrically connected to the negative electrode layer as a third output terminal of the first underbridge switching chip, and a drain electrode of the second IGBT is electrically connected to the first underbridge ac side electrode layer as a third input terminal of the first underbridge switching chip.

4. The power module of claim 3, wherein the second half-bridge upper arm switch chip includes a third IGBT, a gate electrode of the third IGBT is electrically connected to the second half-bridge upper arm drive metal layer as a fifth control terminal of the second half-bridge upper arm switch chip, a source electrode of the third IGBT is electrically connected to the second half-bridge upper arm source electrode layer and the second half-bridge ac side electrode layer as a fifth output terminal of the second half-bridge upper arm switch chip, and a drain electrode of the third IGBT is electrically connected to the second half-bridge positive electrode layer as a fifth input terminal of the second half-bridge upper arm switch chip.

5. The power module of claim 4, wherein the second subhalf bridge arm switch chip comprises a fourth IGBT, a gate electrode of the fourth IGBT is electrically connected to the second subhalf bridge arm drive metal layer as a seventh control terminal of the second subhalf bridge arm switch chip, a source electrode of the fourth IGBT is electrically connected to the negative electrode layer as a seventh output terminal of the second subhalf bridge arm switch chip, and a drain electrode of the fourth IGBT is electrically connected to the second half bridge ac side electrode layer as a seventh input terminal of the second subhalf bridge arm switch chip.

6. The power module of claim 1, wherein the first half-bridge positive electrode layer and the second half-bridge positive electrode layer are arranged along the second direction and are symmetrical about a first direction central axis;

The first half-bridge alternating-current side electrode layer, the second half-bridge alternating-current side electrode layer and the negative electrode layer are arranged along the second direction and are symmetrical about the central axis of the first direction;

The first half-bridge upper bridge arm source electrode layer, the first half-bridge upper bridge arm driving electrode layer, the second half-bridge upper bridge arm source electrode layer and the second half-bridge upper bridge arm driving electrode layer are arranged along the second direction and are symmetrical about the central axis of the first direction;

The first half-bridge lower bridge arm source electrode layer, the first half-bridge lower bridge arm driving electrode layer, the second half-bridge lower bridge arm source electrode layer and the second half-bridge lower bridge arm driving electrode layer are arranged along the second direction and are symmetrical about the central axis of the first direction.

7. The power module of claim 1, wherein the first half-bridge upper leg switch chip, the first half-bridge upper leg parallel diode chip are disposed on a side of the first half-bridge positive electrode layer facing away from the substrate;

The first half-bridge lower bridge arm switch chip and the first half-bridge lower bridge arm parallel diode chip are arranged on one side of the first half-bridge alternating current side electrode layer, which is away from the substrate.

8. The power module of claim 7, wherein the second half-bridge upper leg switch chip, the second half-bridge upper leg parallel diode chip are disposed on a side of the second half-bridge positive electrode layer facing away from the substrate;

The second half-bridge lower bridge arm switch chip and the second half-bridge lower bridge arm parallel diode chip are arranged on one side of the second half-bridge alternating current side electrode layer, which is away from the substrate.

9. The power module of claim 1, further comprising:

The first connecting piece is electrically connected with the first output end of the first half-bridge upper bridge arm switch chip, the second output end of the first half-bridge upper bridge arm parallel diode chip and the first half-bridge alternating-current side electrode layer respectively;

The second connecting piece is electrically connected with the third output end of the first half-bridge lower bridge arm switch chip, the fourth output end of the first half-bridge lower bridge arm parallel diode chip and the negative electrode layer respectively;

The third connecting piece is electrically connected with the fifth output end of the switch chip of the upper bridge arm of the second half bridge, the sixth output end of the parallel diode chip of the upper bridge arm of the second half bridge and the electrode layer of the alternating current side of the second half bridge respectively;

And the fourth connecting piece is respectively and electrically connected with the seventh output end of the second half-bridge lower bridge arm switch chip, the eighth output end of the second half-bridge lower bridge arm parallel diode chip and the negative electrode layer.

10. The power module of claim 1, further comprising: a first terminal member, a second terminal member, a third terminal member, a fourth terminal member, a fifth terminal member, a sixth terminal member, a seventh terminal member, an eighth terminal member, a ninth terminal member, a tenth terminal member, an eleventh terminal member, a twelfth terminal member, and a thirteenth terminal member;

One end of the first terminal piece is electrically connected with the first half-bridge positive electrode layer, and the other end of the first terminal piece extends above the substrate;

One end of the second terminal piece is electrically connected with the first half-bridge alternating-current side electrode layer, and the other end of the second terminal piece extends above the substrate;

one end of the third terminal piece is electrically connected with the negative electrode layer, and the other end of the third terminal piece extends above the substrate;

one end of the fourth terminal piece is electrically connected with the second half-bridge alternating-current side electrode layer, and the other end of the fourth terminal piece extends above the substrate;

One end of the fifth terminal piece is electrically connected with the second half-bridge positive electrode layer, and the other end of the fifth terminal piece extends above the substrate;

one end of the sixth terminal piece is electrically connected with the source electrode layer of the upper bridge arm of the first half bridge, and the other end of the sixth terminal piece extends above the substrate;

one end of the seventh terminal piece is electrically connected with the upper bridge arm driving electrode layer of the first half bridge, and the other end of the seventh terminal piece extends above the substrate;

one end of the eighth terminal piece is electrically connected with the source electrode layer of the lower bridge arm of the first half bridge, and the other end of the eighth terminal piece extends above the substrate;

one end of the ninth terminal piece is electrically connected with the first half-bridge lower bridge arm driving electrode layer, and the other end of the ninth terminal piece extends above the substrate;

one end of the twelfth terminal piece is electrically connected with the source electrode layer of the upper bridge arm of the second half bridge, and the other end of the twelfth terminal piece extends above the substrate;

one end of the thirteenth terminal piece is electrically connected with the upper bridge arm driving electrode layer of the second half bridge, and the other end of the thirteenth terminal piece extends above the substrate;

One end of the eleventh terminal piece is electrically connected with the source electrode layer of the lower bridge arm of the second half bridge, and the other end of the eleventh terminal piece extends above the substrate;

One end of the tenth terminal piece is electrically connected with the lower bridge arm driving electrode layer of the second half bridge, and the other end of the tenth terminal piece extends above the substrate;

One end of the eleventh terminal piece is electrically connected with the source electrode layer of the lower bridge arm of the second half bridge, and the other end of the eleventh terminal piece extends above the substrate;

one end of the twelfth terminal piece is electrically connected with the source electrode layer of the upper bridge arm of the second half bridge, and the other end of the twelfth terminal piece extends above the substrate;

One end of the thirteenth terminal piece is electrically connected with the upper bridge arm driving electrode layer of the second half bridge, and the other end of the thirteenth terminal piece extends above the substrate.