CN118048622B - Air inlet structure and semiconductor processing equipment - Google Patents
Air inlet structure and semiconductor processing equipment Download PDFInfo
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- CN118048622B CN118048622B CN202410451495.3A CN202410451495A CN118048622B CN 118048622 B CN118048622 B CN 118048622B CN 202410451495 A CN202410451495 A CN 202410451495A CN 118048622 B CN118048622 B CN 118048622B
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Abstract
The application relates to the technical field of semiconductor processing, and discloses an air inlet structure and semiconductor processing equipment. The air inlet structure is arranged at the air inlet of the reaction cavity and comprises a structure body and a rotating body. The structure body is provided with a uniform air cavity and an air inlet channel and an air outlet channel, wherein one ends of the air inlet channel and the air outlet channel are far away from each other and are communicated with the uniform air cavity, the other end of the air inlet channel is communicated with the outside and is used for introducing process gas, and the other end of the air outlet channel is communicated into the reaction cavity; the rotating body is rotatably and floatably arranged in the air homogenizing cavity and positioned on a gas flow path in the air homogenizing cavity, the rotating body is circular in circumferential direction, the middle diameter is larger than the diameters of the two ends, the rotating body is symmetrical along the rotation axis of the rotating body, and the process gas is stirred when the rotating body rotates so as to enable the process gas to uniformly reach the air outlet channel. The air inlet structure and the semiconductor processing equipment provided by the application ensure the uniformity of reaction gas, ensure the thickness and quality of film deposition and solve the problem of gas deflection.
Description
Technical Field
The embodiment of the application relates to the technical field of semiconductor processing, in particular to an air inlet structure and semiconductor processing equipment.
Background
Chemical vapor deposition (Chemical Vapor Deposition, CVD) refers to a process in which chemical gases or vapors react on the surface of a substrate to synthesize a coating or film, and is the most widely used technique in the semiconductor industry for depositing a variety of materials. Common CVD methods include thermal CVD, plasma enhanced chemical Vapor Deposition (PECVD, plasma Enhanced Chemical Vapor Deposition), metal organic chemical Vapor Deposition (MOCVD, metal Organic Chemical Vapor Deposition), and the like. The CVD technology has the advantages of high efficiency, high purity, strong controllability and the like, so the CVD technology is widely applied to the preparation of various materials and makes an important contribution to the development of the modern semiconductor technology.
Chemical vapor deposition equipment is equipment for generating a film by using one or more gas phase compounds or simple substances containing film elements to perform chemical reaction on the surface of a wafer under certain temperature and concentration conditions. For example, in an apparatus for depositing a tungsten film, tungsten hexafluoride is chemically reduced with hydrogen under a certain condition to generate tungsten, and the tungsten is deposited on the wafer surface to form a film having a uniform tungsten deposition layer. In chemical vapor deposition processes, it is often necessary to control the flow rate, temperature, pressure, etc. of the gas to ensure that the deposited film has the desired properties and thickness. If the molecular weight difference between different gases in the process mixed gas is large, for example, the reactive gases tungsten hexafluoride and hydrogen used in the process of depositing the tungsten film are easy to generate uneven gas mixing, generate uneven reaction and have poor deposition effect.
In the existing chemical vapor deposition equipment, when different gases with large molecular weight differences exist in the reaction gases, the problem of gas deviation can not be well solved, so that the reaction is uneven and the film deposition thickness is different.
Disclosure of Invention
The embodiment of the application aims to provide an air inlet structure and semiconductor processing equipment, which can solve the problem of gas deflection, ensure the uniformity of gas reaction and ensure the thickness and quality of film deposition.
In order to solve the technical problems, embodiments of the present application provide an air intake structure, which is disposed at an air intake hole of a reaction chamber and includes a structure body and a rotating body. The structure body is provided with a uniform air cavity and an air inlet channel and an air outlet channel, wherein one ends of the air inlet channel and the air outlet channel are far away from each other and are communicated with the uniform air cavity, the other end of the air inlet channel is communicated with the outside and is used for introducing process gas, and the other end of the air outlet channel is communicated into the reaction cavity; the rotating body is rotatably and floatably arranged in the air homogenizing cavity and positioned on a gas flow path in the air homogenizing cavity, the rotating body is circular in circumferential direction, the middle diameter is larger than the diameters of the two ends, the rotating body is symmetrical along the rotation axis of the rotating body, and the process gas is stirred when the rotating body rotates so as to enable the process gas to uniformly reach the air outlet channel.
In addition, the embodiment of the application also provides semiconductor processing equipment, which comprises a reaction cavity and the air inlet structure, wherein the reaction cavity is provided with an inner cavity and an air inlet communicated with the inner cavity, and the air inlet structure is arranged on the inner wall of the air inlet.
According to the air inlet structure and the semiconductor processing equipment provided by the embodiment of the application, the air inlet structure is arranged at the air inlet of the reaction cavity, the air inlet structure comprises the structure body and the rotating body, and the rotating body is rotatably arranged in the air homogenizing cavity of the structure body and is positioned on the air flow path in the air homogenizing cavity. After the reaction gas enters the uniform air cavity through the air inlet channel on the structural body, the reaction gas enters the reaction cavity through the air outlet channel after rotating and stirring the rotating body with the size changing along the direction of the rotating axis, so that the uniformity of the reaction gas is ensured, the thickness and the quality of film deposition are ensured, and the problem of gas deflection is solved.
In some embodiments, the air inlet channels are arranged in a bent shape in the structural body, and a plurality of air inlet channels are uniformly distributed around the rotating body.
In some embodiments, the air outlet channel is disposed opposite to the side of the rotator, which is far away from the outlet of the air inlet channel, in the structural body, and a plurality of air outlet channels are symmetrically distributed around the extension line of the rotation center axis of the rotator, and the length of the air outlet channel is shorter than that of the air inlet channel.
In some embodiments, the structural body comprises a cylinder and a bottom plate detachably connected with the cylinder, an opening at one end of the cylinder, which is far away from the air inlet channel, is closed with the bottom plate to form an air homogenizing cavity, and the air outlet channel penetrates through the bottom plate.
In some embodiments, the bottom of the rotating body is provided with a first magnet, the bottom of the structural body is provided with a second magnet, the installation position of the second magnet corresponds to the position of the bottom of the rotating body, two opposite sides of the first magnet and the second magnet repel each other, and the air outlet channel penetrates through the second magnet.
In some embodiments, a driving part is arranged on one side of the structural body, which is far away from the air outlet channel, and the driving part comprises a driving source and a transmission part which is interlocked with the driving source, and the transmission part drives the rotating body to rotate through a magnetic coupling.
In some embodiments, the lower part of the transmission part is opposite to the upper part of the rotating body, one end of the transmission part, which is away from the driving source, is circumferentially provided with a plurality of third magnets with S poles and N poles alternately arranged with each other around the transmission part, the upper part of the rotating body is circumferentially provided with a plurality of fourth magnets with S poles and N poles alternately arranged with each other around the rotating body, the magnetic poles of the third magnets are opposite to the magnetic poles of the fourth magnets at corresponding positions, and the third magnets drive the fourth magnets to rotate through magnetic force.
In some embodiments, the outer surface of the rotating body is provided with a polytetrafluoroethylene coating.
Drawings
One or more embodiments are illustrated by way of example and not limitation in the figures of the accompanying drawings, in which like references indicate similar elements, and in which the figures of the drawings are not to be taken in a limiting sense, unless otherwise indicated.
FIG. 1 is a schematic cross-sectional view of an air intake structure according to some embodiments of the present application;
Fig. 2 is a schematic cross-sectional view of a semiconductor processing apparatus according to some embodiments of the present application.
Reference numerals illustrate: 11-a structural body; 111-a cylinder; 112-homogenizing the air cavity; 113-an intake passage; 114-an air outlet channel; 115-a bottom plate; 1151 a second magnet; 12-a rotating body; 121-a first magnet; 122-fourth magnet; 13-a driving member; 131-a driving source; 132-a transmission part; 133-a third magnet; 14-a reaction chamber; 141-an air inlet hole; 142-lumen; 15-gas separation device.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the following detailed description of the embodiments of the present application will be given with reference to the accompanying drawings. However, those of ordinary skill in the art will understand that in various embodiments of the present application, numerous technical details have been set forth in order to provide a better understanding of the present application. The claimed application may be practiced without these specific details and with various changes and modifications based on the following embodiments. The following embodiments are divided for convenience of description, and should not be construed as limiting the specific implementation of the present application, and the embodiments can be mutually combined and referred to without contradiction.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application; the terms "comprising" and "having" and any variations thereof in the description of the application and the claims and the description of the drawings above are intended to cover a non-exclusive inclusion.
In the description of embodiments of the present application, the technical terms "first," "second," and the like are used merely to distinguish between different objects and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated, a particular order or a primary or secondary relationship. In the description of the embodiments of the present application, the meaning of "plurality" is two or more unless explicitly defined otherwise.
In the description of the embodiments of the present application, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "coupled," and the like should be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally formed; or may be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the embodiments of the present application will be understood by those of ordinary skill in the art according to specific circumstances.
Chemical vapor deposition (Chemical Vapor Deposition, CVD) refers to a process in which chemical gases or vapors react on the surface of a substrate to synthesize a coating or film, and is the most widely used technique in the semiconductor industry for depositing a variety of materials. Common CVD methods include thermal CVD, plasma Enhanced Chemical Vapor Deposition (PECVD), metal Organic Chemical Vapor Deposition (MOCVD), and the like. The CVD technology has the advantages of high efficiency, high purity, strong controllability and the like, so the CVD technology is widely applied to the preparation of various materials and makes an important contribution to the development of the modern semiconductor technology.
Chemical vapor deposition equipment is equipment which utilizes one or more gas phase compounds or simple substances containing film elements to carry out chemical reaction on the surface of a wafer under certain temperature and concentration conditions to generate a film and deposit the film on the wafer. In the deposition of thin films by chemical vapor deposition equipment, it is often necessary to control the flow rate, temperature, pressure, etc. of the gas to ensure that the deposited thin film has the desired properties and thickness. If there are different reaction gases with larger molecular weight difference among the gases in the reaction mixture, for example, tungsten hexafluoride and hydrogen gas which are reaction gases used in the process of depositing tungsten films are easy to generate uneven gas mixing, generate offset edges, cause uneven reaction and have bad deposition effect.
In the existing chemical vapor deposition equipment, when different gases with large molecular weight differences exist in the reaction gases, the problem of gas deviation can not be well solved, so that the reaction is uneven and the film deposition thickness is different.
Therefore, in order to solve the problem of gas deflection, the uniformity of the reaction gas is ensured, and the thickness and quality of film deposition are ensured.
The embodiment of the application provides an air inlet structure, which comprises a structural body and a rotating body, wherein the air inlet structure is arranged at an air inlet of a reaction cavity, and the rotating body is rotatably arranged in an air homogenizing cavity of the structural body and is positioned on a gas flow path in the air homogenizing cavity. After the reaction gas enters the uniform air cavity through the air inlet channel on the structural body, the reaction gas enters the reaction cavity through the air outlet channel after rotating and stirring the rotating body with the size changing along the direction of the rotating axis, so that the uniformity of the reaction gas is ensured, the thickness and the quality of film deposition are ensured, and the problem of gas deflection is solved.
An air intake structure according to some embodiments of the present application is described below with reference to fig. 1.
As shown in fig. 1, some embodiments of the present application provide an air intake structure disposed at an air intake hole 141 of a reaction chamber, comprising a structure body 11 and a rotating body 12. The structure body 11 is provided with a uniform air cavity and an air inlet channel 113 and an air outlet channel 114, one ends of the air cavity are far away from each other and are communicated with the uniform air cavity 112, the other end of the air inlet channel 113 is communicated with the outside and is used for introducing process gas, and the other end of the air outlet channel 114 is communicated into the reaction cavity; the rotating body 12 is rotatably and floatably arranged in the air homogenizing chamber 112 and is positioned on the flow path of the air in the air homogenizing chamber 112, the rotating body 12 is circular in circumferential direction, the middle diameter is larger than the diameters of two ends, the rotating body 12 is symmetrical along the rotation axis of the rotating body 12, and the process air is stirred when the rotating body 12 rotates so as to uniformly reach the air outlet channel 114.
It should be noted that, the structural body 11 may be made of metal materials such as iron and aluminum, or other non-metal materials that meet the requirements of high temperature resistance and corrosion resistance. The three-dimensional shape of the structural body 11 may be a cylinder, a cube, or the like, which meets practical requirements, and is not limited in any way. The rotating body 12 needs to meet the requirements of high temperature resistance and corrosion resistance, light weight and easy suspension rotation, and the rotating body 12 can be made of the existing light weight materials meeting the requirements, such as carbon fiber composite materials, polymer materials, honeycomb structure materials and the like. The rotation body 12 is centrally symmetrical along the rotation axis of the rotation body 12 in order to equalize centrifugal forces applied to the rotation body 12 at all places during rotation, thereby facilitating stable suspension rotation thereof.
In addition, the air homogenizing chamber 112 in the structural body 11 is generally located at the center of the body, and the shape of the air homogenizing chamber is determined according to the shape and actual requirements of the structural body 11. The air inlet channel 113 and the air outlet channel 114 are respectively far away from one end communicated with the air homogenizing cavity 112, so that air is ensured to be inlet from one end of the air homogenizing cavity 112, and air is exhausted from the other end, and the air is fully and uniformly mixed in the air homogenizing cavity 112. The process gas enters from the other end of the gas inlet channel 113, passes through the gas inlet channel 113 and the uniform gas cavity 112, and flows out from the gas outlet channel 114 into the reaction cavity after uniformly mixing the uniform gas cavity 112.
According to the air inlet structure provided by some embodiments of the application, the air inlet structure is arranged at the air inlet hole 141 of the reaction cavity, the air inlet structure comprises a structure body 11 and a rotating body 12, and the rotating body 12 is rotatably arranged in the air homogenizing cavity 112 of the structure body 11 and is positioned on the air flow path in the air homogenizing cavity 112. After the reaction gas enters the uniform air cavity 112 through the air inlet channel 113 on the structural body 11, the reaction gas enters the reaction cavity through the air outlet channel 114 after being stirred by rotating the rotating body 12 with the size changing along the direction of the rotating axis, so that the uniformity of the reaction gas is ensured, the thickness and the quality of film deposition are ensured, and the problem of gas deflection is solved.
It should be added that the rotary body 12 is shaped like two round tables stacked together, the large round surfaces of the two round tables are close, and the small round surfaces are far away from each other. This is a preferred shape of the rotating body 12, with the larger the diameter of the circle and the larger the centrifugal force at the same angular velocity. In this shape, the gas is therefore subjected to the greatest centrifugal forces at the surface of the intermediate position of the rotating body 12, where the different gas molecules collide with each other most strongly. And the gas flow channels are the narrowest here and the flow rate is the fastest. In the gas flow direction, the diameter of the rotating body 12 is increased, the gap of the flow channel is reduced, the gas resistance is increased, and the gas is gathered, so that the uniform gas mixing is facilitated; the diameter of the rotating body 12 is reduced, the gas has a wall attaching effect, the gas gathers towards the center, the collision probability is increased, and the uniform gas mixing is facilitated. Therefore, such a structure facilitates the rotation of the rotary body 12 to rotate the mixed gas.
In some embodiments of the present application, the air inlet channels 113 are disposed in a bent shape in the structural body 11, and are uniformly distributed in a plurality of circles around the rotating body 12.
As shown in fig. 1, the air intake passage 113 is bent twice and then enters the air homogenizing chamber 112 after a relatively long distance, and in a practical case, the air intake passage 113 may be bent three times or more. Under the structure, the gas can generate turbulent flow states of mutual mixing, bending and confusion of movement tracks at the bending position, so that the gas is primarily mixed. The gas inlet channels 113 are uniformly distributed around the rotating body 12 for uniformly ventilating the uniform gas chamber 112, so as to further uniformly mix the reaction gases.
In some embodiments of the present application, the air outlet channels 114 are disposed opposite to the outlet side of the rotating body 12 away from the air inlet channel 113 in the structural body 11, and are symmetrically distributed around the extension line of the central axis of rotation of the rotating body 12, and the length of the air outlet channels 114 is shorter than the length of the air inlet channel 113.
That is, the air outlet channel 114 is disposed on the side of the structure body 11 far from the outlet of the air inlet channel 113, and the extending direction of the air outlet channel 114 is parallel to the rotation central axis of the rotating body 12, so that the air uniformly mixed by the rotation of the selecting body is directly thrown out to the vicinity of the inlet of the air outlet channel 114. The gas outlet channel 114 is provided to be short so that the uniformly mixed reaction gas rapidly flows into the reaction chamber through the gas outlet channel 114.
In some embodiments of the present application, the structural body 11 includes a cylinder 111 and a bottom plate 115 detachably connected to the cylinder 111, where an end of the cylinder 111 remote from the air inlet channel 113 is opened and closed with the bottom plate 115 to form an air homogenizing chamber 112, and the air outlet channel 114 penetrates through the bottom plate 115.
It should be noted that, some of the reaction gas may react with each other in the gas distribution chamber 112 for a long period of time to generate particles, for example, in the tungsten thin film deposition reaction gas, the reaction between hydrogen and tungsten hexafluoride may generate tungsten particles. In addition, the rotor 12 may be damaged when it is used for a long period of time in the air distribution chamber 112. To facilitate cleaning of the deposits in the reaction chamber and replacement or repair of the rotating body 12, a detachable bottom plate 115 is provided on the structural body 11. The installed base plate 115 serves as a part of the structural body 11, and the air outlet channel 114 penetrates through the middle of the base plate 115.
In some embodiments of the present application, the bottom of the rotating body 12 is provided with the first magnet 121, the bottom of the structural body 11 is provided with the second magnet 1151, the installation position of the second magnet 1151 corresponds to the position of the bottom of the rotating body 12, and two opposite sides of the first magnet 121 opposite to the second magnet 1151 repel each other, and the air outlet channel 114 penetrates through the second magnet 1151.
That is, the bottom of the rotating body 12 and the bottom of the structural body 11 are provided with magnets that repel each other, and the rotating body 12 is suspended in the air homogenizing chamber 112 by the repulsive force of the magnets. In this case, the rotating body 12 needs to be made of a lightweight material, and the repulsive force of the first magnet 121 and the second magnet 1151 is greater than the sum of the weights of the rotating body 12 and the first magnet 121, ensuring that the rotating body 12 is floatingly disposed in the air distribution chamber 112. Under the condition that the rotating body 12 is suspended, the friction force during the rotation of the rotating body 12 can be greatly reduced, the energy consumption of equipment is reduced, and the rotation of the rotating body 12 is facilitated; at the same time, the rotor 12 is suspended to avoid the rotor 12 from blocking the underlying gas outlet channel 114. The installed base plate 115 is used as a part of the structural body 11, the air outlet channel 114 penetrates through from the middle position of the base plate 115, the second magnet 1151 is installed at the middle position of the base plate 115, and the air outlet channel 114 penetrates through the second magnet 1151.
In some embodiments of the present application, a driving member 13 is disposed on a side of the structure body 11 away from the air outlet channel 114, the driving member 13 includes a driving source 131 and a transmission portion 132 coupled with the driving source, and the transmission portion 132 drives the rotating body 12 to rotate through a magnetic coupling.
That is, the driving member 13 is disposed at a side of the structure body 11 near the air inlet passage 113, and a fixing bracket may be disposed at an outer side of the structure body 11, on which the driving member 13 is fixed. The driving source 131 may be a motor, the transmission part 132 is fixed on an output shaft of the motor, and the transmission part 132 transmits kinetic energy of rotation to one end of the rotating body 12 to drive the rotating body 12 to rotate.
In some embodiments of the present application, the lower part of the transmission part 132 is disposed opposite to the upper part of the rotating body 12, one end of the transmission part 132 facing away from the driving source 131 is circumferentially provided with a plurality of third magnets 133 having S poles and N poles alternately arranged with each other around the transmission part, the upper part of the rotating body 12 is circumferentially provided with a plurality of fourth magnets 122 having S poles and N poles alternately arranged with each other around the rotating body, and magnetic poles of the third magnets 133 are opposite to magnetic poles of the fourth magnets 122 at corresponding positions, and the third magnets 133 drive the fourth magnets 122 to rotate by magnetic force.
That is, the transmission part 132 drives the rotation body 12 to rotate according to the principle of attraction of the heteropolar magnets through the rotation linkage of the third magnet and the fourth magnet. This drive transmits torque and motion through interaction of magnetic fields without direct contact. On the one hand, the magnetic force can pass through the thin wall between the rotating body 12 and the transmission part 132, and an opening for the rotating shaft to pass through is not required to be arranged on the structural body 11, so that the tightness of the uniform air cavity 112 can be ensured. On the other hand, the abrasion of the traditional transmission structure and the damage to the motor are avoided. In this case, the repulsive force of the first magnet 121 and the second magnet 1151 is greater than the weight force of the rotating body 12, the weight force of the first magnet 121, the weight force of the fourth magnet 122, and the repulsive force of the third magnet 133 and the fourth magnet 122 rotating to the homopolar repulsive position, and the sum of the four downward forces ensures that the rotating body 12 is floatingly disposed in the air distribution chamber 112.
In some embodiments of the present application, the outer surface of the rotating body 12 is provided with a polytetrafluoroethylene coating.
It should be noted that polytetrafluoroethylene, i.e., teflon, is the coating of most of the non-stick pans at present. A polytetrafluoroethylene (PTFE, polyetrafluoroethylene) film is formed on the surface of metal or other materials, so that the wear resistance, corrosion resistance, high temperature resistance, anti-sticking and other properties of the film can be improved. A polytetrafluoroethylene film is formed on the outer surface of the rotating body 12, and the anti-adhesion property is mainly utilized to prevent aggregation of particles on the surface of the rotating body 12.
Some embodiments of the present application further provide a semiconductor processing apparatus, which includes the reaction chamber 14 and the air inlet structure, wherein the reaction chamber 14 is provided with an inner cavity 142 and an air inlet hole 141 communicated with the inner cavity 142, and the air inlet structure is disposed on an inner wall of the air inlet hole 141.
It should be noted that, a gas distributing device 15 may be disposed on a wall of the inner cavity 142 below the gas inlet structure, as shown in fig. 2, the gas distributing device 15 may be a nozzle, and may be capable of spraying a uniformly mixed reaction gas onto a surface of the reaction medium to generate a deposition reaction to generate a film. The air inlet structure is directly arranged in the air inlet hole 141 on the reaction cavity 14, and the uniformly mixed reaction gas directly flows into the reaction cavity from the air outlet channel 114 without any redundant pipeline in the middle, so that the uniformly mixed reaction gas is ensured to be sent into the reaction position by components such as a spray head and the like in time.
It will be understood by those of ordinary skill in the art that the foregoing embodiments are specific examples of carrying out the application and that various changes in form and details may be made therein without departing from the spirit and scope of the application.
Claims (7)
1. An air inlet structure arranged at an air inlet of a reaction cavity, which is characterized by comprising:
The structure body is provided with a uniform air cavity and an air inlet channel and an air outlet channel, wherein one ends of the air inlet channel and the air outlet channel are far away from each other and are communicated with the uniform air cavity, the other end of the air inlet channel is communicated with the outside and is used for introducing process gas, and the other end of the air outlet channel is communicated into the reaction cavity;
The rotating body is rotatably and floatably arranged in the air homogenizing cavity and positioned on a gas flow path in the air homogenizing cavity, the rotating body is circular in circumferential direction, the middle diameter of the rotating body is larger than the diameters of the two ends, the rotating body is symmetrical along the rotation axis center of the rotating body, and the process gas is stirred when the rotating body rotates so as to uniformly reach the air outlet channel;
the bottom of the rotating body is provided with a first magnet, the bottom of the structural body is provided with a second magnet, the installation position of the second magnet corresponds to the position of the bottom of the rotating body, the two opposite sides of the first magnet and the second magnet repel each other, and the air outlet channel penetrates through the second magnet;
The structure body is far away from one side of the air outlet channel and is provided with a driving piece, the driving piece comprises a driving source and a transmission part which is interlocked with the driving source, and the transmission part drives the rotating body to rotate through a magnetic coupling.
2. An air inlet structure according to claim 1, wherein the air inlet channels are arranged in a bent shape in the structure body, and a plurality of air inlet channels are uniformly distributed around the rotating body.
3. An air inlet structure according to claim 1, wherein the air outlet channels are arranged in the structure body opposite to the side, far away from the outlet of the air inlet channel, of the rotating body, a plurality of air outlet channels are symmetrically distributed around the extension line of the rotation center axis of the rotating body, and the length of the air outlet channels is shorter than that of the air inlet channels.
4. An air inlet structure according to claim 1, wherein the structural body comprises a cylinder and a bottom plate detachably connected with the cylinder, an opening at one end of the cylinder far away from the air inlet channel is closed with the bottom plate to form the air homogenizing cavity, and the air outlet channel penetrates through the bottom plate.
5. The air intake structure according to claim 1, wherein the lower portion of the transmission part is disposed opposite to the upper portion of the rotating body, a plurality of third magnets with S poles and N poles alternately arranged with each other are circumferentially disposed around the transmission part at one end of the transmission part facing away from the driving source, a plurality of fourth magnets with S poles and N poles alternately arranged with each other are circumferentially disposed around the rotating body at the upper portion of the rotating body, magnetic poles of the third magnets are opposite to magnetic poles of the fourth magnets at corresponding positions, and the third magnets drive the fourth magnets to rotate by magnetic force.
6. An air intake structure according to claim 1, wherein the outer surface of the rotating body is provided with a polytetrafluoroethylene coating.
7. A semiconductor processing apparatus, comprising a reaction chamber and an air intake structure as claimed in any one of claims 1 to 6, wherein the reaction chamber is provided with an inner cavity and an air intake hole communicating with the inner cavity, and the air intake structure is provided on an inner wall of the air intake hole.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101589171A (en) * | 2006-03-03 | 2009-11-25 | 普拉萨德·盖德吉尔 | Apparatus and method for large area multi-layer atomic layer chemical vapor processing of thin films |
| CN102844464A (en) * | 2010-03-26 | 2012-12-26 | 丰田自动车株式会社 | Surface treatment apparatus |
| WO2022262701A1 (en) * | 2021-06-18 | 2022-12-22 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and gas mixing and intake device thereof |
| CN117418217A (en) * | 2023-12-18 | 2024-01-19 | 上海谙邦半导体设备有限公司 | Uniform gas device and chemical vapor deposition uniform gas system |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4956469B2 (en) * | 2008-03-24 | 2012-06-20 | 株式会社ニューフレアテクノロジー | Semiconductor manufacturing equipment |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101589171A (en) * | 2006-03-03 | 2009-11-25 | 普拉萨德·盖德吉尔 | Apparatus and method for large area multi-layer atomic layer chemical vapor processing of thin films |
| CN102844464A (en) * | 2010-03-26 | 2012-12-26 | 丰田自动车株式会社 | Surface treatment apparatus |
| WO2022262701A1 (en) * | 2021-06-18 | 2022-12-22 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and gas mixing and intake device thereof |
| CN117418217A (en) * | 2023-12-18 | 2024-01-19 | 上海谙邦半导体设备有限公司 | Uniform gas device and chemical vapor deposition uniform gas system |
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