CN118047543A - Manufacturing process for front surface grounding protection of semiconductor nano heating plate - Google Patents
Manufacturing process for front surface grounding protection of semiconductor nano heating plate Download PDFInfo
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- CN118047543A CN118047543A CN202311822119.2A CN202311822119A CN118047543A CN 118047543 A CN118047543 A CN 118047543A CN 202311822119 A CN202311822119 A CN 202311822119A CN 118047543 A CN118047543 A CN 118047543A
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- plating
- heating
- grounding
- silver paste
- substrate
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 65
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 238000007747 plating Methods 0.000 claims abstract description 59
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 24
- 230000008569 process Effects 0.000 claims abstract description 14
- 238000004140 cleaning Methods 0.000 claims abstract description 10
- 229910052709 silver Inorganic materials 0.000 claims abstract description 9
- 239000004332 silver Substances 0.000 claims abstract description 9
- 238000004381 surface treatment Methods 0.000 claims abstract description 6
- 239000007888 film coating Substances 0.000 claims abstract description 5
- 238000009501 film coating Methods 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 claims description 21
- 238000000576 coating method Methods 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 claims description 8
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 6
- 239000004576 sand Substances 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 5
- 238000005488 sandblasting Methods 0.000 claims description 5
- 235000019270 ammonium chloride Nutrition 0.000 claims description 4
- FAPDDOBMIUGHIN-UHFFFAOYSA-K antimony trichloride Chemical compound Cl[Sb](Cl)Cl FAPDDOBMIUGHIN-UHFFFAOYSA-K 0.000 claims description 4
- JHXKRIRFYBPWGE-UHFFFAOYSA-K bismuth chloride Chemical compound Cl[Bi](Cl)Cl JHXKRIRFYBPWGE-UHFFFAOYSA-K 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 238000004590 computer program Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
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- Chemically Coating (AREA)
Abstract
The application provides a manufacturing process for front surface grounding protection of a semiconductor nanometer heating plate, which is applied to the technical field of nanometer processes and comprises the steps of carrying out surface treatment on a substrate and cleaning; heating the film by a high-temperature tunnel furnace to carry out film coating; plating the plating solution on the surface of the substrate to form a plating surface, and printing conductive silver paste on the plating surface; plating a conductive resistor with a low resistance value on the non-plating surface as a grounding surface; printing grid conductive silver paste on the grounding surface; then leading the grounding point to the grounding point of the heating surface by silver paste; the method solves the technical problems that the prior art is not solved, such as complicated process steps, high cost and long manufacturing period, of the prior art for manufacturing the front surface grounding protection of the semiconductor nano heating plate.
Description
Technical Field
The application relates to the technical field of nano processes, in particular to a manufacturing process for front ground protection of a semiconductor nano heating plate.
Background
The semiconductor nano heating plate is a nano material capable of heating by current, is widely applied to the fields of heating, thermal insulation, heat-sensitive sensors and the like, and needs to be subjected to front ground protection in the process of manufacturing the semiconductor nano heating plate so as to ensure the safety and stability of the semiconductor nano heating plate;
There are some processes for manufacturing the front surface ground protection of the semiconductor nano heating plate, but there are some problems, such as complicated process steps, high cost, long manufacturing period, etc., so a new manufacturing process for manufacturing the front surface ground protection of the semiconductor nano heating plate is required to be proposed to solve the above problems.
Disclosure of Invention
The application aims to solve the technical problems that the prior processes are used for manufacturing the front surface grounding protection of the semiconductor nano heating plate, but have problems such as complicated process steps, high cost and long manufacturing period, and provides a manufacturing process for manufacturing the front surface grounding protection of the semiconductor nano heating plate.
The application adopts the following technical means for solving the technical problems: a manufacturing process for front surface grounding protection of a semiconductor nano heating plate,
A manufacturing process for front surface grounding protection of a semiconductor nano heating plate comprises the following steps:
s1, carrying out surface treatment on a substrate and cleaning;
s2, heating the film through a high-temperature tunnel furnace to carry out film coating;
s3, plating the plating solution on the surface of the substrate to form a plating surface, and printing conductive silver paste on the plating surface;
s4, plating a conductive resistor with a low resistance value on the non-plating surface to serve as a grounding surface;
s5, printing grid conductive silver paste on the grounding surface;
And S6, leading the silver paste for the grounding point to the grounding point of the heating surface.
Further, in the step of subjecting the substrate to surface treatment and cleaning,
The base material is microcrystalline glass, quartz glass or ceramic.
Further, before the step of coating film by heating in a high-temperature tunnel furnace,
And (3) carrying out sand blasting treatment on one surface of the substrate, which needs to be plated with the semiconductor nano heating film, and drying the substrate in a low-temperature oven at 100-180 ℃ for later use.
Further, in the step of coating film by heating in the high-temperature tunnel furnace,
Heating in a tunnel furnace with the high temperature of 650-780 ℃ to activate the surface of the substrate for coating.
Further, in the step of plating the plating solution on the surface of the substrate to form a plating surface and printing conductive silver paste on the plating surface,
The internal components of the coating liquid comprise 70-89% of tin tetrachloride, 3-9% of antimony chloride, 1-8% of bismuth chloride, 0.2-1.3% of ammonium chloride, 0.3-1.5% of hydrochloric acid, 10-30% of alcohol and 4-12% of water, the tin tetrachloride, the water and the alcohol are mixed, dissolved by heating to 60-85 ℃, other components are mixed and dissolved in proportion after being completely dissolved, and heating is stopped until other component materials are completely dissolved.
Further, in the step of plating the plating solution on the surface of the substrate to form a plating surface and printing conductive silver paste on the plating surface,
The content of the conductive silver paste on the plating surface is 70% -85%, and the conductive silver paste is used as a conductive electrode.
Further, after the step of introducing the ground point silver paste onto the ground point of the heating surface,
And covering a layer of purple sand insulating layer on the grounding surface.
The application provides a manufacturing process for front ground protection of a semiconductor nano heating plate, which has the following beneficial effects:
By subjecting the substrate to a surface treatment and cleaning; heating the film by a high-temperature tunnel furnace to carry out film coating; plating the plating solution on the surface of the substrate to form a plating surface, and printing conductive silver paste on the plating surface; plating a conductive resistor with a low resistance value on the non-plating surface as a grounding surface; printing grid conductive silver paste on the grounding surface; then leading the grounding point to the grounding point of the heating surface by silver paste; the method solves the technical problems that the prior art is not solved, such as complicated process steps, high cost and long manufacturing period, of the prior art for manufacturing the front surface grounding protection of the semiconductor nano heating plate.
Drawings
Fig. 1 is a flowchart of an embodiment of a front-side ground protection manufacturing process of a semiconductor nano-heating plate according to the present application.
The realization, functional characteristics and advantages of the present application are further described with reference to the accompanying drawings in combination with the embodiments.
Detailed Description
It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
The technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It is noted that the terms "comprising," "including," and "having," and any variations thereof, in the description and claims of the application and in the foregoing figures, are intended to cover non-exclusive inclusions. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those listed steps or elements but may include other steps or elements not listed or inherent to such process, method, article, or apparatus. In the claims, specification, and drawings of the present application, relational terms such as "first" and "second", and the like are used solely to distinguish one entity/operation/object from another entity/operation/object without necessarily requiring or implying any actual such relationship or order between such entities/operations/objects.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the application. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of skill in the art will explicitly and implicitly appreciate that the embodiments described herein may be combined with other embodiments.
Referring to fig. 1, a flow chart of a manufacturing process of front ground protection of a semiconductor nano heating plate in an embodiment of the application is shown;
Example 1
A manufacturing process for front surface grounding protection of a semiconductor nano heating plate comprises the following steps:
s1, carrying out surface treatment on a substrate and cleaning;
s2, heating the film through a high-temperature tunnel furnace to carry out film coating;
s3, plating the plating solution on the surface of the substrate to form a plating surface, and printing conductive silver paste on the plating surface;
s4, plating a conductive resistor with a low resistance value on the non-plating surface to serve as a grounding surface;
s5, printing grid conductive silver paste on the grounding surface;
And S6, leading the silver paste for the grounding point to the grounding point of the heating surface.
Surface treating and cleaning the substrate: selecting microcrystalline glass as a base material, and cleaning and treating the surface of the base material to remove impurities and improve adhesive force;
Sand blasting treatment and low-temperature drying: performing sand blasting treatment on one surface of the semiconductor nano heating film to be plated, and spraying fine sand on the surface of the substrate by using a sand blaster to increase the surface roughness; then, the treated base material is put into a low-temperature oven with the temperature of 100-180 ℃ for drying for standby so as to improve the adhesive force of the coating;
Heating by a high-temperature tunnel furnace: heating the substrate in a tunnel furnace with the high temperature of 650-780 ℃ to activate the surface of the substrate and prepare a coating film, thereby improving the quality and stability of the coating film;
Preparing a coating liquid: the internal components of the coating liquid were prepared according to the following proportions:
Tin tetrachloride: 70 to 89 percent
Antimony chloride: 3 to 9 percent
Bismuth chloride: 1 to 8 percent of
Ammonium chloride: 0.2 to 1.3 percent
Hydrochloric acid: 0.3 to 1.5 percent
Alcohol: 10 to 30 percent
Water: mixing tin tetrachloride, water and alcohol in an amount of 4% to 12%, heating to 6085 ℃ for dissolution, adding other components in proportion for mixed dissolution, and stopping heating until complete dissolution;
Coating: coating the prepared coating liquid on the surface of a substrate to form a coating surface; then, printing a conductive electrode containing 70-85% of conductive silver paste on the coating surface so as to improve conductivity and stability;
And (3) grounding protection: plating a conductive resistor with a low resistance value on the non-plating surface to serve as a grounding surface, and printing grid conductive silver paste on the grounding surface; then, leading the grounding point to the grounding point of the heating surface by using silver paste, so as to ensure effective grounding;
and (3) covering an insulating layer: a layer of purple sand insulating layer is covered on the grounding surface, so that the insulating performance and the safety of the grounding surface are improved.
In this embodiment, during the step of surface-treating and cleaning the substrate,
The base material is microcrystalline glass, quartz glass or ceramic.
In this embodiment, before the step of coating film by heating again in the high-temperature tunnel furnace,
And (3) carrying out sand blasting treatment on one surface of the substrate, which needs to be plated with the semiconductor nano heating film, and drying the substrate in a low-temperature oven at 100-180 ℃ for later use.
In this embodiment, in the step of coating by heating in the high-temperature tunnel furnace, the substrate surface is activated and coated by heating in the high-temperature tunnel furnace at 650-780 ℃.
In this embodiment, in the step of forming a plating film surface by plating the plating solution on the surface of the substrate and printing the conductive silver paste on the plating film surface,
The internal components of the coating liquid comprise 70-89% of tin tetrachloride, 3-9% of antimony chloride, 1-8% of bismuth chloride, 0.2-1.3% of ammonium chloride, 0.3-1.5% of hydrochloric acid, 10-30% of alcohol and 4-12% of water, the tin tetrachloride, the water and the alcohol are mixed, dissolved by heating to 60-85 ℃, other components are mixed and dissolved in proportion after being completely dissolved, and heating is stopped until other component materials are completely dissolved.
In this embodiment, in the step of forming a plating film surface by plating the plating solution on the surface of the substrate and printing the conductive silver paste on the plating film surface,
The content of the conductive silver paste on the plating surface is 70% -85%, and the conductive silver paste is used as a conductive electrode.
In this embodiment, after the step of introducing the ground point silver paste onto the ground point of the heating surface again,
And covering a layer of purple sand insulating layer on the grounding surface.
It will be appreciated by those skilled in the art that embodiments of the present invention may be provided as a method, system, or computer program product. Accordingly, the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present invention may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
The present invention is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems) and computer program products according to embodiments of the invention. It will be understood that each flow and/or block of the flowchart illustrations and/or block diagrams, and combinations of flows and/or blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
Although embodiments of the present application have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the application, the scope of which is defined in the appended claims and their equivalents.
Claims (7)
1. The manufacturing process for the front surface grounding protection of the semiconductor nano heating plate is characterized by comprising the following steps of:
s1, carrying out surface treatment on a substrate and cleaning;
s2, heating the film through a high-temperature tunnel furnace to carry out film coating;
s3, plating the plating solution on the surface of the substrate to form a plating surface, and printing conductive silver paste on the plating surface;
s4, plating a conductive resistor with a low resistance value on the non-plating surface to serve as a grounding surface;
s5, printing grid conductive silver paste on the grounding surface;
And S6, leading the silver paste for the grounding point to the grounding point of the heating surface.
2. The process for fabricating a front surface ground protection layer of a semiconductor nano-heating plate according to claim 1, wherein, during the step of surface-treating and cleaning the substrate,
The base material is microcrystalline glass, quartz glass or ceramic.
3. The process for fabricating the front surface ground protection of the semiconductor nano-heating plate according to claim 1, wherein before the step of coating film by heating in the high-temperature tunnel furnace,
And (3) carrying out sand blasting treatment on one surface of the substrate, which needs to be plated with the semiconductor nano heating film, and drying the substrate in a low-temperature oven at 100-180 ℃ for later use.
4. The process for fabricating a front surface ground protection of a semiconductor nano-heating plate according to claim 1, wherein, in the step of coating film by heating in a high-temperature tunnel furnace,
Heating in a tunnel furnace with the high temperature of 650-780 ℃ to activate the surface of the substrate for coating.
5. The process for manufacturing the front surface grounding protection of the semiconductor nano heating plate according to claim 1, wherein in the step of plating the plating solution on the surface of the substrate to form a plating surface and printing conductive silver paste on the plating surface,
The internal components of the coating liquid comprise 70-89% of tin tetrachloride, 3-9% of antimony chloride, 1-8% of bismuth chloride, 0.2-1.3% of ammonium chloride, 0.3-1.5% of hydrochloric acid, 10-30% of alcohol and 4-12% of water, the tin tetrachloride, the water and the alcohol are mixed, dissolved by heating to 60-85 ℃, other components are mixed and dissolved in proportion after being completely dissolved, and heating is stopped until other component materials are completely dissolved.
6. The process for manufacturing the front surface grounding protection of the semiconductor nano heating plate according to claim 1, wherein in the step of plating the plating solution on the surface of the substrate to form a plating surface and printing conductive silver paste on the plating surface,
The content of the conductive silver paste on the plating surface is 70% -85%, and the conductive silver paste is used as a conductive electrode.
7. The process for fabricating a front surface ground protection for a semiconductor nano-heating panel according to claim 1, wherein, after the step of guiding the ground point to the ground point of the heating surface with silver paste,
And covering a layer of purple sand insulating layer on the grounding surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311822119.2A CN118047543A (en) | 2023-12-27 | 2023-12-27 | Manufacturing process for front surface grounding protection of semiconductor nano heating plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311822119.2A CN118047543A (en) | 2023-12-27 | 2023-12-27 | Manufacturing process for front surface grounding protection of semiconductor nano heating plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118047543A true CN118047543A (en) | 2024-05-17 |
Family
ID=91045773
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311822119.2A Pending CN118047543A (en) | 2023-12-27 | 2023-12-27 | Manufacturing process for front surface grounding protection of semiconductor nano heating plate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN118047543A (en) |
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2023
- 2023-12-27 CN CN202311822119.2A patent/CN118047543A/en active Pending
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