CN1180460C - Etching method for reducing discharge amount of exhaust gas - Google Patents
Etching method for reducing discharge amount of exhaust gas Download PDFInfo
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- CN1180460C CN1180460C CNB021079439A CN02107943A CN1180460C CN 1180460 C CN1180460 C CN 1180460C CN B021079439 A CNB021079439 A CN B021079439A CN 02107943 A CN02107943 A CN 02107943A CN 1180460 C CN1180460 C CN 1180460C
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- engraving method
- reative cell
- dielectric substance
- plasma
- substance layer
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Abstract
The present invention relates to an etching method for reducing the discharge amount of exhaust gas. A base material which is covered with a dielectric substance layer is first provided, the base material is placed in a reaction chamber which is coupled to a radio frequency power source and a C3F8 source, and then, low radio frequency power and low pressure are used for forming a plasma body in the reaction chamber. A dielectric substance is etched by the plasma body. Finally, the existence of the plasma body is terminated, and the base material and the dielectric substance layer which is etched are moved out the reaction chamber.
Description
(1) technical field
The present invention is relevant for the engraving method that reduces discharge amount of exhaust gas, particularly about use octachloropropane (C in the special parameter scope
3F
8) the etching dielectric substance layer to be to reduce the method for the byproduct quantity produced.
(2) background technology
Existing semiconductor fabrication is to use CF mostly when etching dielectric substance layer (such as silicon oxide layer and silicon nitride layer)
4Or C
2F
6As etchant.But there are a distinct disadvantage in these existing etchants and existing etching technique: the discharging waste gas amount of etching program be can not ignore often, or even huge.Therefore, production cost can significantly increase because of many raw material are wasted, and exhaust gas discharged also can cause earth environment and seriously influences.At this, Figure 1A shows that some data come etching parameter and discharging waste gas magnitude relation in the general description prior art, the unit of discharging waste gas amount be 1,000,000 tons of carbon equivalents (million metricton carbonequivalent, MMTCE).
At this disappearance, the etching technique of some newly-developeds has used new etchant to come the etching dielectric substance layer.For example 3M company has proposed a kind of use C
3F
8Carry out etched technology, the relevant parameter scope that 3M company announces be radio-frequency power between 1200 watts (W) are to 1800 watts, C
3F
8Flow is greater than 150 cubic centimetres
3/ minute (sccm) and pressure are greater than 3 holder ears (torr).At this, Figure 1B shows the discharging waste gas amount that 3M company announced and the relation of etching parameter partly.Apparently, the etching parameter according to 3M company is provided uses C
3F
8Can reduce the discharging waste gas amount effectively as etchant, only manage its discharging waste gas amount and still have the space that can reduce, and the space that also can reduce in addition such as the energy of its consumption.
(3) summary of the invention
The present invention's one purpose provides a kind of engraving method of handling dielectric substance layer time institute exhaust gas discharged amount that reduces, and can revise under the preceding topic of existing etching technique not significantly, overcomes the disappearance of existing etching technique.
For achieving the above object, according to engraving method of the present invention, be characterized in, may further comprise the steps: a reative cell is provided, and this reative cell is coupled to a radio-frequency power supply and a fluorocarbon gas source; Environment formation one with low radio frequency power and low-pressure in this reative cell contains a large amount of carbon difluoride radical (CF
2) plasma; Carry out etching with this plasma; And the existence that stops this plasma.
According to the present invention, described fluorocarbon gas source can be perfluoropropane (C
3F
8) gas source.
The present invention changes use C
3F
8Be some etching parameter values of the etching program of etchant, for example reduce input C
3F
8Flow, reduce pressure in the reative cell and the power that reduces employed radio-frequency power supply, so as to the incomplete possibility of reaction between plasma and dielectric substance layer in the reduction reative cell, reduce the ratio that each reactant being input in the reative cell has neither part nor lot in reaction, so reduce because incomplete reaction with do not use caused by factors exhausted air quantity such as reactant.
For further specifying purpose of the present invention, design feature and effect, the present invention is described in detail below with reference to accompanying drawing.
(4) description of drawings
Figure 1A shows the relation between some etching parameters and discharging waste gas amount in the prior art;
Figure 1B shows the use C that 3M company is proposed
3F
8Be the relation between some etching parameters in the method for etchant and discharging waste gas amount;
Fig. 2 A to Fig. 2 H is the basic flow sheet of a preferred embodiment of the present invention:
When Fig. 3 A to Fig. 3 C display application treatment S iN of the present invention, SiON and PEOX, the relation between some etching parameters and discharging waste gas amount;
Fig. 4 shows that taking all factors into consideration factors such as discharging waste gas amount and cost the present invention is directed to the suggestion etching parameter value that SiN/SiON/PEOX proposes;
Fig. 5 A to Fig. 5 I is two kinds of basic flow sheets of another preferred embodiment of the present invention: and
Fig. 6 is for showing the basic flow sheet of the another preferred embodiment of the present invention.
(5) embodiment
A preferred embodiment of the present invention is a kind of engraving method that reduces the discharging waste gas amount, comprises following each basic step at least.
Shown in Fig. 2 A, provide the ground 10 that is covered for dielectric substance layer 11 and patterning shade 12 in regular turn.At this, the material of dielectric substance layer 11 is selected from one of silicon dioxide, silicon nitride and silicon oxynitride (SiOxNy) usually, and wherein X and Y are all positive integer.
Shown in Fig. 2 B, place the wafer of ground 10 (together with dielectric substance layer 11 and patterning shade 12) in reative cell 13 and carry on the seat 14.At this, reative cell 13 is to be coupled to radio-frequency power supply 15 and C
3F
8Reacting gas source 16, C
3F
8Reacting gas source 16 is in order to C
3F
8Gas (and N
2O etc.) be sent to reative cell 13 by first conduit 17 with shower nozzle 18, radio-frequency power supply 15 then is in order to low radio frequency power is sent to reative cell 13 through second conduit 19.
Shown in Fig. 2 C, with low C
3F
8The environment of flow, low radio frequency power and low-pressure forms plasma, promptly form present plasma state gas source 195 in reative cell 13, and make gas source 195 be not patterned the part dielectric substance layer 11 that shade 12 covered and react to each other.At this, so-called low radio frequency power is approximately 900 watts to 1300 watts, and so-called low-pressure is not more than 3 holder ears, and so-called low C
3F
8Flow is not more than 150 flux units (sccm).Certainly, this moment also can be with N
2O gas input reative cell 13, but this moment N
2The flow of O is not the present embodiment emphasis.
In this embodiment, also comprise one of different gas source such as helium reacting gas source, argon reacting gas source, two nitrogenize oxygen reacting gas sources, oxygen reacting gas source and nitrogen dioxide reacting gas source is provided, or the combination in all gases source.
Shown in Fig. 2 D, stop the existence of plasma 195, and ground 10 (together with the part dielectric substance layer 11 and the patterning shade 12 that are not removed) is shifted out reative cell 13.Certainly,, also can be used to 195 etchings of etched plasma, as long as the etched speed of dielectric substance layer 11 obviously than the etched speed of patterning shade 12 soon in order to the patterning shade 12 that forms pattern as many etching programs.At this, be simplicity of illustration, all diagrams are the not etched situation of shows patterned metal shade 12 only all.
Certainly, because byproducts such as waste gas are might not be shown in Fig. 2 A to Fig. 2 D like that by the plasma 195 and the present embodiment that reaction produced of dielectric substance layer 11, etching partly dielectric substance layer 11 gets final product so long as handle dielectric substance layer 11 with the formed plasma of the condition that present embodiment proposed to form an opening in dielectric substance layer 11.
For instance, present embodiment also can be used for thinning dielectric substance layer 11 comprehensively, shown in Fig. 2 E to Fig. 2 H like that.At this moment, do not need to use patterning shade 12, dielectric substance layer 11 form good after just directly with plasma 195 comprehensive etching dielectric substance layers 11, so as to reaching the purpose of comprehensive reduction dielectric substance layer 11 thickness.
Be the etching parameter value adjustment of explanation present embodiment and the relation between the discharging waste gas amount, Fig. 3 A to Fig. 3 C has shown the result of three etch application of present embodiment respectively.At this, these three diagrams have shown C
3F
8Flow, N
2O flow, reative cell internal pressure, radio-frequency power supply power, discharging waste gas amount and reduce percentage with discharging waste gas amount under the shown prior art discharging waste gas amount of Figure 1A is compared, these three diagrams are respectively the results who shows etching of silicon nitride (SiN), etching silicon oxynitride (SiON) and be etched with the plasma gain formed oxide of chemical vapour deposition (CVD) (PROX).
Comparison diagram 3A to Fig. 3 C and Figure 1A and Figure 1B can find that significantly present embodiment institute exhaust gas discharged amount is not only than not using C
3F
8Prior art few, also than use C that 3M company proposed
3F
8Method is come fewly.Particularly, the use C that relatively present embodiment and 3M proposed
3F
8Method can find that present embodiment has used less C
3F
8Gas has also used less radio-frequency power supply and lower pressure, so present embodiment not only can reduce the discharging waste gas amount, can also reduce the quantity of employed reactant etc., and then reduce cost.Particularly, the reative cell internal pressure of only managing the present embodiment use is lower than the method for 3M, but because the chamber pressure that present embodiment uses also is to be unit with torr, therefore be still the scope that prior art can reach easily, do not have any difficulty or special cost.
At last, take all factors into consideration factors such as discharging waste gas amount and cost, present embodiment has proposed one respectively at SiN/SiON/PEOX and has set up view etching parameter value, sees also Fig. 4.At this, it must be emphasized that Fig. 4 one sets up view etching parameter value, the principal character of present embodiment with can reach parameter area and be not limited to this.Present embodiment is at the radio-frequency power supply power that is approximately 900 watts to 1300 watts, is not more than the pressure of 3 holder ears and is not more than the C of 150 flux units
3F
8Under the flow, with C
3F
8The etching dielectric substance layer.
Another preferred embodiment of the present invention is still a kind of engraving method that reduces the discharging waste gas amount, its basic step is identical with last preferred embodiment, all be to focus on to form the process of etching, rather than focus on and how to use this plasma to handle dielectric substance layer with plasma.Just in this preferred embodiment, only need low-pressure scope and the low radio frequency power range the same, do not limit C with previous preferred embodiment
3F
8Flow.This is because experimental result shows C
3F
8Flow mainly is that influence can be used for the number of particle of etching dielectric layer, as for reacted not exclusively, the speed of reaction rate and the raw material of how many ratios can have neither part nor lot in reaction and become waste material or the like, mainly be subjected in the reative cell pressure and in order to the influence of the radio-frequency power supply power that forms plasma.
Apparently and the method for 3M company compare, the present invention also is to use C
3F
8Come the etching dielectric substance layer, just the present invention has used lower pressure and lower radio-frequency power, lower even C
3F
8Flow.In any case the difference of the present invention and prior art is that have a mind to and non-obvious.
Most existing etching techniques comprise the method for 3M company, main purpose be to speed etch-rate and increase etching selectivity, also be to focus on to realize these main purposes to the adjustment of relevant parameter, as for reducing the just subsidiary purpose of discharging waste gas amount.Therefore, the routine adjustment to all relevant parameters can be not a purpose to reduce the discharging waste gas amount.
In addition, the overwhelming majority has etching techniques now, comprises the method for 3M company, all has only announcement/prompting and and how to speed etch-rate and increase the relevant content of etching selectivity.For example, the method for 3M company only provides the preferred range of some parameters, but never clearly announcement/prompting change the benefit that the numerical value of these parameters can bring, even do not clearly reveal/point out the relevant contents of numerical value any and these parameters of minimizing.
Therefore, reason does not think that the method for 3M company has disclosed/instructed the scope of using these parameters that the present invention mentioned.
In addition, because main feature of the present invention is at low-pressure and low radio frequency power (even low C
3F
8Flow) environment forms plasma down, and uses the plasma treatment dielectric substance layer, so as to reducing the exhaust gas discharged amount.Therefore, the present invention might not be used for handling the dielectric substance layer that is positioned on the ground (or saying wafer), and the dielectric substance layer that any meeting contacts with plasma is all the manageable dielectric substance layer of the present invention.
For instance, on the one hand because the wafer shown in Fig. 2 A to Fig. 2 H carries seat 14 only for illustrating, real wafer carries seat 145 in order effectively to fix wafer (or saying ground 10), can't be covered fully by wafer (or saying ground 10) institute, but understand the sidewall (even top surface edge) that some is positioned at wafer (or saying ground 10), a kind of possibility shown in Fig. 5 A.Owing to can't accurately controlling to usually, the growth of dielectric substance layer 11 only is formed on other place that does not have diffusion on the wafer on the other hand.Therefore, a kind of possibility shown in Fig. 5 B, unless the employed technological parameter of semiconductor fabrication process makes all dielectric substance layers 11 all be removed by plasma 195 just, otherwise after the end of semiconductor fabrication process is removed with wafer (or saying ground 10), always having dielectric substance layer 11 is positioned at wafer and carries on seat 145 and the sidewall of reative cell 13, particularly be arranged in wafer and carry seat 145 on the part surface that the semiconductor fabrication process can not covered by wafer (or saying ground 10), and in the semiconductor fabrication process of carrying out subsequently, become the source of pollution.
Therefore, another preferred embodiment of the present invention just is a kind of chamber cleaning method that reduces the discharging waste gas amount, comprises following basic step at least:
Like that, provide reative cell 13 to be cleaned shown in Fig. 5 B, reative cell 13 is to be coupled to radio-frequency power supply 15 and octachloropropane reacting gas source 16, and the surface that has dielectric substance layer 11 sidewall that is arranged in reative cell 13 and the wafer that is positioned at reative cell 13 to carry seat 145.
Like that, the environment with low radio frequency power and low-pressure in reative cell 13 forms plasma 195 shown in Fig. 5 C, and handles dielectric substance layer 11 with plasma 195.Certainly, also can optionally reduce the flow of octachloropropane.
Shown in Fig. 5 D, stop the existence of plasma 195.Certainly, be the existence that after dielectric substance layer 11 is eliminated totally, just stops plasma 195.
Certainly, because the semiconductor fabrication process has many variations, present embodiment also can have other variation.For instance, may be shown in Fig. 5 E as, the surface that the preceding entire wafer that is placed at wafer 10 is carried seat 145 is covered by dielectric substance layer 115.
Apparently, shown in Fig. 5 F and Fig. 5 G, this moment, wafer 10 in course of reaction was to be positioned on the dielectric substance layer 115, and course of reaction can form dielectric substance layer 11 on dielectric substance layer 115.At this, dielectric substance layer 115 is separate with dielectric substance layer 11, the material of the two can be identical also can be inequality.
In addition, after wafer 10 is removed, shown in Fig. 5 H, like that, can under the environment of low radio frequency power and low-pressure, form plasma 195, so as to removing dielectric substance layer 11 and dielectric substance layer 115 the two.Certainly, also can optionally reduce the flow of octachloropropane.
Apparently, shown in Fig. 5 I, as long as reaction is fully enough, wafer carries dielectric substance layer all on the seat 145 11 and dielectric substance layer 115, all can be removed totally by plasma 195.
And because experimental result proof generation exhausted air quantity is also closely related with the concentration of carbon difluoride radical, therefore another preferred embodiment of the present invention is a kind of engraving method that reduces discharge amount of exhaust gas, as shown in Figure 6, comprises following basic step at least:
As prepare shown in the square 21, form dielectric substance layer on a ground.Certainly, having a patterning shade to be positioned at dielectric substance layer usually will be removed with those parts that form dielectric substance layer.
Shown in etching square 22, apply plasma on the dielectric substance layer and make at least partly dielectric substance layer under the environment of low radio frequency power and low-pressure by the etching of plasma institute.The main material of this plasma is to produce a large amount of carbon difluoride radical (CF under the environment of low radio frequency power and low-pressure
2*) fluorocarbon (chain fluorocarbon), and so-called a large amount of standard of comparison is meant under identical reaction environment, can produce and compare CF
4With C
2F
6More than carbon difluoride radical.
Without doubt, one of this preferred embodiment big characteristics are uses of the fluorocarbon that can produce a large amount of carbon difluoride radicals (molecule).
In addition, because the main difference of this preferred embodiment and the first two preferred embodiment is C
3F is replaced by the fluorocarbon of a large amount of carbon difluoride radicals of produce, and some details of this preferred embodiment can be similar to the details of the first two preferred embodiment.For instance, by using the environment of low radio frequency power and low-pressure, can reduce the quantity of discharging waste gas effectively.Certainly, limit can produce the flow of the fluorocarbon of a large amount of carbon difluoride radicals further.
Certainly, those of ordinary skill in the art will be appreciated that, above embodiment is used for illustrating the present invention, and be not to be used as limitation of the invention, as long as in connotation scope of the present invention, all will drop in the scope of claims of the present invention variation, the modification of the above embodiment.
Claims (15)
1. an engraving method is characterized in that, may further comprise the steps:
One reative cell is provided, and this reative cell is coupled to a radio-frequency power supply and a fluorocarbon gas source;
Environment formation one with low radio frequency power and low-pressure in this reative cell contains a large amount of carbon difluoride radical (CF
2) plasma;
Carry out etching with this plasma; And
Stop the existence of this plasma.
2. engraving method as claimed in claim 1 is characterized in that described fluorocarbon gas source is perfluoropropane (C
3F
8) gas source.
3. engraving method as claimed in claim 1 is characterized in that, the step of described this plasma of formation is to form this plasma with a low fluorocarbon flow.
4. engraving method as claimed in claim 1 is characterized in that also comprising and places a ground in this reative cell that this ground is covered by a dielectric substance layer.
5. engraving method as claimed in claim 4 is characterized in that, the material of this dielectric substance layer is selected from silicon dioxide, silicon nitride and silicon oxynitride SiO
XN
YOne of, wherein X and Y are all positive integer.
6. engraving method as claimed in claim 1 is characterized in that, this low radio frequency power is 900 watts to 1300 watts.
7. engraving method as claimed in claim 1 is characterized in that, this low-pressure is not more than 3 holder ears.
8. engraving method as claimed in claim 1 is characterized in that describedly providing step also to comprise to couple described reative cell to helium body source.
9. engraving method as claimed in claim 1 is characterized in that describedly providing step also to comprise to couple described reative cell to argon gas body source.
10. engraving method as claimed in claim 1 is characterized in that describedly providing step also to comprise to couple described reative cell to one two nitrogenize carrier of oxygen sources.
11. engraving method as claimed in claim 1 is characterized in that describedly providing step also to comprise to couple described reative cell to oxygen body source.
12. engraving method as claimed in claim 1 is characterized in that describedly providing step also to comprise to couple described reative cell to nitrogen dioxide gas source.
13. engraving method as claimed in claim 1 is characterized in that this fluorocarbon can produce and compare CF under identical reaction environment
4More than carbon difluoride radical, also can produce and compare C
2F
6More than carbon difluoride radical.
14. engraving method as claimed in claim 3 is characterized in that, described low fluorocarbon flow is not more than 150 cubic centimetres
3/ minute.
15. engraving method as claimed in claim 1 is characterized in that, comprises that also the wafer that a dielectric substance layer is arranged in this reative cell carries on the seat.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021079439A CN1180460C (en) | 2002-03-22 | 2002-03-22 | Etching method for reducing discharge amount of exhaust gas |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021079439A CN1180460C (en) | 2002-03-22 | 2002-03-22 | Etching method for reducing discharge amount of exhaust gas |
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|---|---|
| CN1447399A CN1447399A (en) | 2003-10-08 |
| CN1180460C true CN1180460C (en) | 2004-12-15 |
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|---|---|---|---|
| CNB021079439A Expired - Fee Related CN1180460C (en) | 2002-03-22 | 2002-03-22 | Etching method for reducing discharge amount of exhaust gas |
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|---|---|---|---|---|
| CN101153396B (en) * | 2006-09-30 | 2010-06-09 | 中芯国际集成电路制造(上海)有限公司 | Plasma etching method |
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