CN118042656A - Electric heating film for sapphire window and preparation method thereof - Google Patents
Electric heating film for sapphire window and preparation method thereof Download PDFInfo
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- CN118042656A CN118042656A CN202410291985.1A CN202410291985A CN118042656A CN 118042656 A CN118042656 A CN 118042656A CN 202410291985 A CN202410291985 A CN 202410291985A CN 118042656 A CN118042656 A CN 118042656A
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- electric heating
- heating film
- sapphire
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- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 44
- 239000010980 sapphire Substances 0.000 title claims abstract description 44
- 238000005485 electric heating Methods 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 239000010410 layer Substances 0.000 claims description 86
- 239000000758 substrate Substances 0.000 claims description 54
- 239000011241 protective layer Substances 0.000 claims description 23
- 238000007747 plating Methods 0.000 claims description 20
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 18
- 229910052804 chromium Inorganic materials 0.000 claims description 18
- 239000011651 chromium Substances 0.000 claims description 18
- 238000005507 spraying Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 238000007738 vacuum evaporation Methods 0.000 claims description 6
- 238000010884 ion-beam technique Methods 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000012790 adhesive layer Substances 0.000 claims description 3
- 238000007687 exposure technique Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract description 15
- 238000002834 transmittance Methods 0.000 abstract description 9
- 238000012634 optical imaging Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 37
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 229910052786 argon Inorganic materials 0.000 description 10
- 239000003292 glue Substances 0.000 description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000000243 solution Substances 0.000 description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 230000007613 environmental effect Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 238000009210 therapy by ultrasound Methods 0.000 description 3
- 229920000742 Cotton Polymers 0.000 description 2
- 235000009161 Espostoa lanata Nutrition 0.000 description 2
- 240000001624 Espostoa lanata Species 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
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- Physical Vapour Deposition (AREA)
Abstract
The invention provides an electric heating film for a sapphire window and a preparation method thereof. The electrically heated film has wide transparent wave band, high optical transmittance and reduced influence on the optical imaging system.
Description
Technical Field
The invention relates to the technical field of optical films, in particular to an electric heating film for a sapphire window and a preparation method thereof.
Background
Sapphire is one of the materials commonly used in optical window fabrication, which typically requires plating of an electrically heated film when used in an optical system to improve the environmental flexibility of the system. The common electrically heated film for optical windows is typically a transparent conductive oxide film (e.g., ITO, FTO) or a metal grid, etc.
However, the transparent conductive oxide film has a low optical transmittance (typically not higher than 85%) and a narrow transparent band (typically 400nm to 800 nm); the above problems limit the application of these electrically heated film techniques in demanding optical imaging systems, where metal grids affect the imaging quality of the optical system in certain scenarios.
Disclosure of Invention
In order to solve the problems in the background art, the invention provides the electric heating film for the sapphire window and the preparation method thereof, which improve the optical transmittance of the sapphire window, widen the transparent wave band and improve the environmental adaptability of the sapphire window.
The technical scheme for solving the technical problems is as follows:
In one aspect, the invention provides an electric heating film for a sapphire window, comprising a bonding layer, a conductive layer, a connecting layer and a protective layer, wherein the bonding layer, the conductive layer and the connecting layer are sequentially arranged on the sapphire window and the protective layer is plated on the blank area and the connecting layer of the sapphire window.
According to the scheme, the material of the bonding layer is chromium, and the thickness is 20 nm-30 nm
According to the scheme, the conducting layer is made of gold, and the thickness of the conducting layer is 40 nm-100 nm.
According to the scheme, the thickness of the material chromium of the connecting layer is 5 nm-10 nm.
According to the scheme, the protective layer is made of silicon dioxide, and the thickness of the protective layer is 1-5 mu m.
According to the scheme, the pattern design is in a periodically arranged square grid array, the line width is 10-30 mu m, the period is 400-1200 mu m, and the ratio of the line width to the period is 1: and 40, plating a bonding layer, a conductive layer and a connecting layer on the lines of the square grid array respectively to form a periodic metal grid structure.
The beneficial effects of the invention are as follows:
According to the electric heating film for the sapphire window, the bonding layer is inserted between the substrate and the conductive layer, so that the adhesive force of the conductive layer is remarkably improved, the connecting layer is inserted between the conductive layer and the protective layer, the adhesive force of the protective layer is remarkably improved, and the outermost protective layer improves the environmental adaptability of the electric heating film.
Under the condition that the electric heating performance of the electric heating film for the sapphire window is consistent with that of the oxide film, the electric heating film for the sapphire window widens the transparent wave band from visible light to visible light and near infrared by adopting an optimized periodic metal grid structure, and improves the optical transmittance to more than 90%.
According to the electric heating film for the sapphire window, the shielding and diffraction effects of the metal grid on light rays are weakened by optimizing the metal grid structure of the conductive layer and controlling the line width of the metal grid, and the influence on an optical imaging system is reduced under the condition that the electric heating performance is consistent with that of the metal grid.
In a second aspect, the present invention provides a method for preparing the electric heating film for a sapphire window, including the following steps:
S1, taking a sapphire window as a substrate, and manufacturing design patterns on the substrate in advance by adopting a photoetching technology;
s2, sequentially depositing chromium, gold and chromium on the surface of the substrate with the design pattern to respectively form a bonding layer, a conductive layer and a connecting layer;
s3, removing the adhesive layer, and plating a protective layer on the surface of the substrate.
In accordance with the above scheme, the photolithography technique described in step S1 includes spraying a positive photoresist onto a substrate, exposing the substrate using a mask exposure technique, and developing the substrate using a developer.
According to the scheme, the surface of the substrate is cleaned before the positive photoresist is sprayed in the step S1.
According to the scheme, the bonding layer, the conducting layer and the connecting layer are all plated by vacuum evaporation and an ion beam auxiliary technology is adopted.
The preparation method of the electric heating film for the sapphire window has the beneficial effects that: the thickness tolerance of each film layer is larger, the process is simple, the repeatability is good, the adhesive force of the protective layer can be obviously improved by adjusting the ion auxiliary parameter of the connecting layer, and the prepared electric heating film has good environmental adaptability and wide application prospect.
Drawings
FIG. 1 is a schematic view of the structure of an electrically heated film for a sapphire window of the present invention;
FIG. 2 is a photomicrograph of a conductive layer of an electrically heated film for a sapphire window of the present invention;
FIG. 3 is a graph of measured optical transmittance of an electrically heated film sample for a sapphire window in accordance with the present invention.
In the drawings, the components represented by the respective reference numerals are as follows:
1.2 parts of sapphire window, 2 parts of bonding layer, 3 parts of conducting layer, 4 parts of connecting layer, 5 parts of protective layer.
Detailed Description
The principles and features of the present invention are described below with reference to the drawings and specific embodiments, the examples being provided for illustration only and not for the purpose of limiting the invention.
In order to solve the problems of low optical transmittance and narrow transparent wave band of the conventional electric heating film, the inventor designs an electric heating film with a four-layer structure, and the structure of the electric heating film for a sapphire window is shown in fig. 1, and the electric heating film comprises a bonding layer 2, a conductive layer 3 and a connecting layer 4 which are sequentially arranged on the sapphire window 1 and based on pattern design, and a protective layer 5 plated on a blank area of the sapphire window 1 and the connecting layer 4.
By introducing the bonding layer 2, the adhesion between the conductive layer 3 and the sapphire window 1 is improved, by introducing the connecting layer 4, the adhesion between the protective layer 5 and the conductive layer 3 is improved, and the protective layer 5 improves the scratch resistance, corrosion resistance and other environmental suitability of the electric heating film.
Preferably, the sapphire window 1 is an optical grade sapphire material.
Preferably, the material of the bonding layer 2 is chromium, the thickness is 20 nm-30 nm, and preferably, the purity of the chromium is not less than 99.99%.
Preferably, the material of the conductive layer 3 is gold, the thickness is 40 nm-100 nm, and preferably, the purity of gold is not less than 99.99%.
The thickness of the conductive layer 3 can be calculated according to the actual resistance Rs requirement of the electric heating film, and different heating application requirements can be met by adjusting the thickness of the conductive layer 3, so that the electric heating film is flexibly applicable to different optical systems.
According to the above scheme, the material of the connection layer 4 is chromium, the thickness is 5 nm-10 nm, and preferably, the purity of the chromium is not less than 99.99%.
According to the above scheme, the material of the protective layer 5 is silicon dioxide, the thickness is 1 μm-5 μm, and preferably, the purity of the silicon dioxide is not less than 99.99%.
According to the scheme, the pattern design is in a periodically arranged square grid array, the line width is 10-30 mu m, the period is 400-1200 mu m, and the ratio of the line width to the period is 1:40, respectively plating a bonding layer, a conductive layer and a connecting layer on the wires of the square grid array to form a periodic metal grid structure, wherein a micrograph of the conductive layer 3 of the electric heating film for the sapphire window is shown in fig. 2, and the influence on an optical imaging system is reduced by optimizing the metal grid structure of the conductive layer 3 under the condition that the electric heating performance is consistent with that of the metal grid strips.
When the conductive layer is made of gold, the line width of the periodically arranged square grid array is 20 μm, and the period is 800 μm, the calculation formula of the thickness of the conductive layer is as follows: conductive layer thickness = 968/Rs in nm.
The preparation method of the electric heating film for the sapphire window comprises the following steps:
s1, taking a sapphire window 1 as a substrate, and manufacturing design patterns on the substrate in advance by adopting a photoetching technology;
s2, respectively depositing chromium, gold and chromium on the surface of the substrate with the design pattern to sequentially form a bonding layer 2, a conductive layer 3 and a connecting layer 4;
s3, removing the adhesive layer, and plating a protective layer 5 on the surface of the substrate.
In some preferred embodiments, the pattern design is in the shape of a periodically arranged square grid array with a line width of 20 μm and a period of 800 μm.
In some preferred embodiments, the lithographic technique described in step S1 includes spraying the substrate with a positive photoresist, exposing with a mask exposure technique and developing with a developer solution.
Preferably, the surface of the substrate is cleaned before the positive photoresist is sprayed in step S1.
In some preferred embodiments, step S1 specifically includes:
1) Cleaning a substrate: firstly, treating the surface to be coated of a substrate with 0.25 mu m alumina polishing solution for 2-5 min, and dipping the substrate with absorbent cotton balls according to the volume ratio of 1:1, wiping the alcohol and diethyl ether mixed solution, and finally checking the surface of the substrate to be coated by a gas-cutting method, and repeatedly wiping and checking until no pollutant exists;
2) Spraying glue: placing the surface of the substrate to be coated upwards in a glue spraying machine, heating the substrate to 50-200 ℃, keeping the temperature for 0.1-1 hour, and then spraying positive photoresist, wherein the spraying thickness is 3-10 mu m;
3) Exposure: placing the substrate glue spraying surface upwards in an exposure machine, then placing a mask plate on the substrate glue spraying surface, and starting an ultraviolet lamp to irradiate for 15-60 s;
4) Developing: placing the exposed substrate in a developing solution, and performing ultrasonic treatment for 10-20min at 38 kHz;
5) Cleaning: placing the developed substrate in analytically pure acetone, treating the substrate for 10-20 min by adopting 38kHz ultrasonic waves, and drying the substrate by adopting high-purity nitrogen.
Preferably, the positive photoresist is AZ5214 type photoresist, and the developing solution is D-76 type developing solution.
Preferably, the line width of the periodically arranged square grid array on the mask plate is 20 μm, the period is 800 μm, the lines are transparent, and other parts are opaque.
In some preferred embodiments, in step S2:
The bonding layer 2 is formed by vacuum evaporation plating of chromium with purity not lower than 99.99%, and adopts an ion beam auxiliary technology, and the thickness of the bonding layer is 20 nm-30 nm;
The conductive layer 3 is formed by vacuum evaporation plating of gold with purity not lower than 99.99%, and the thickness of the conductive layer is 40 nm-100 nm;
The connecting layer 4 is formed by vacuum evaporation plating of chromium with purity not lower than 99.99%, and adopts an ion beam auxiliary technology, and the thickness of the connecting layer is 5 nm-10 nm.
Specifically, the ion treatment parameters before plating the bonding layer 2 are: the bias voltage is 180V-190V, the discharge current is 50A-55A, the argon flow is 12 sccm-15 sccm, and the treatment time is 900S-1200S;
when the bonding layer 2 is plated, the ion auxiliary parameters are as follows: the bias voltage is 150V-160V, the discharge current is 45A-50A, and the argon flow is 10 sccm-12 sccm.
When the connecting layer 4 is plated, the ion auxiliary parameters are as follows: the bias voltage is 130V-150V, the discharge current is 45A-50A, the argon flow is 12 sccm-15 sccm, and the oxygen flow is 5 sccm-8 sccm.
Preferably, the thickness of the conductive layer 3 can be calculated according to the actual required surface resistance Rs of the electrically heated film, and the calculation method is as follows: conductive layer thickness = 968/Rs in nm.
In some preferred embodiments, the specific process for removing the glue layer in step S3 is: and (2) soaking the substrate subjected to the step (S2) in analytically pure acetone for 60-90 min, cleaning with 38kHz ultrasonic waves for 5-10 min, performing ultrasonic treatment in pure water for 5-10 min, and drying with nitrogen.
In the step S4, the protective layer 5 is formed by vacuum evaporation plating of silicon dioxide with purity not lower than 99.99%, and the thickness is 1-5 μm by adopting an ion beam auxiliary technology.
Preferably, the ion treatment parameters before the plating of the protective layer 5 are: starting a heating and baking device, setting the temperature to be 250-260 ℃, and starting an APS ion source after 60-90 min, and setting parameters: the bias voltage is 180V-190V, the discharge current is 50A-55A, the argon flow is 12 sccm-15 sccm, and the treatment time is 900S-1200S.
The ion auxiliary parameters of the plating protective layer 5 are: the bias voltage of the APS ion source is 130-140V, the discharge current of the APS ion source is 45-50A, the argon flow rate of the APS ion source is 10-12 sccm, and the oxygen flow rate of the APS ion source is 5-8 sccm.
Preferably, after the plating in the step S4 is completed, the plating is cooled to room temperature, and the preparation of the electric heating film is completed.
The following is an example of preparing an electrically heated film for a sapphire window.
The adopted substrate material is sapphire, the substrate size is 200mm x 100mm x 10mm, the resistance requirement of the electric heating film is 80 omega, and the thickness of the conductive layer is calculated to be 62nm according to the resistance requirement, and the specific preparation method is as follows:
1) Cleaning a substrate: firstly, treating the surface to be coated of a substrate for 4min by adopting 0.25 mu m alumina polishing solution, and then dipping the surface by adopting absorbent cotton balls according to the volume ratio of 1:1, wiping the alcohol and diethyl ether mixed solution, and checking the cleaning degree of the substrate by adopting a gas-cutting method, and checking the substrate while wiping until the surface of the substrate is free from pollution;
2) Spraying glue on the substrate: and placing the surface of the substrate to be coated upwards in a glue spraying machine, heating the substrate to 150 ℃, keeping the temperature for 0.5 hour, and then spraying AZ5214 type photoresist with the spraying thickness of 6 mu m.
3) Exposure: placing the substrate glue spraying surface upwards in an exposure machine, then placing a mask plate with the line width of 20 mu m and the period of 800 mu m on the substrate glue spraying surface, and starting an ultraviolet lamp for irradiation, wherein the treatment time is 45S.
4) Developing: the exposed substrate is placed in D-76 type developing solution and is treated by ultrasonic waves of 38kHz for 15min.
5) Cleaning: the developed substrate is placed in analytically pure acetone, treated by ultrasonic waves of 38kHz for 15min, and then dried by high-purity nitrogen.
6) Ion treatment of a substrate: placing the cleaned substrate with the glue spraying surface facing downwards in a vacuum coating machine, and vacuumizing to below 1.0E-3 Pa. Turning on an APS ion source, and setting parameters: the bias voltage was 180V, the discharge current was 50A, the argon flow was 12sccm, and the process time was 900S.
7) Plating a bonding layer 2: chromium evaporation parameters: the deposition rate was 0.1nm/S, the thickness was 20nm, the APS ion source bias voltage was 150V, the APS ion source discharge current was 45A, and the APS ion source argon flow was 10sccm.
8) Plating a conductive layer 3: gold evaporation parameters: the deposition rate was 0.1nm/S and the thickness was 62nm.
9) Plating a connecting layer 4: chromium evaporation parameters: the deposition rate was 0.1nm/S, the thickness was 10nm, the APS ion source bias voltage was 130V, the APS ion source discharge current was 50A, the APS ion source argon flow was 15sccm, and the APS ion source oxygen flow was 5sccm.
10 Substrate photoresist removal: the evaporated substrate was immersed in analytically pure acetone for 60min and then cleaned with 38kHz ultrasonic waves for 10min. Then placing the mixture in pure water for ultrasonic treatment for 10min, and drying the mixture by nitrogen.
11 Substrate ion treatment: placing the surface to be coated of the substrate cleaned in the step 10) into a vacuum coating machine downwards, vacuumizing to below 1.0E-3Pa, starting a heating and baking device, setting the temperature to 250 ℃, keeping for 60min, starting an APS ion source, and setting parameters: the bias voltage was 180V, the discharge current was 50A, the argon flow was 12sccm, and the process time was 900S.
12 Protective layer 5 plating: silica evaporation parameters: the deposition rate was 0.6nm/S, the thickness was 3 μm, the APS ion source bias voltage was 130V, the APS ion source discharge current was 50A, the APS ion source argon flow was 12sccm, and the APS ion source oxygen flow was 5sccm. After the evaporation is finished, cooling to room temperature, and finishing the preparation of the electric heating film.
And plating a 470-1100 nm and 1700nm transparent antireflection film on the other surface of the sample, and measuring the optical transmittance of the sample, wherein the optical transmittance curve is shown in figure 3, and the optical transmittance of the sample in 470-1100 nm and 1700nm wave bands is respectively more than 90% and 95%.
The foregoing description of the preferred embodiments of the invention is not intended to limit the invention to the precise form disclosed, and any such modifications, equivalents, and alternatives falling within the spirit and scope of the invention are intended to be included within the scope of the invention.
Claims (10)
1. The electric heating film for the sapphire window is characterized by comprising a bonding layer (2), a conductive layer (3) and a connecting layer (4) which are sequentially arranged on the sapphire window (1) and based on pattern design, and a protective layer (5) plated on the blank area of the sapphire window (1) and the connecting layer (4).
2. The electric heating film for sapphire windows according to claim 1, wherein the bonding layer (2) is made of chromium and has a thickness of 20-30 nm.
3. The electric heating film for sapphire windows according to claim 1, wherein the conductive layer (3) is gold with a thickness of 40 nm-100 nm.
4. The electric heating film for sapphire windows according to claim 1, wherein the material of the connection layer (4) is chromium with a thickness of 5-10 nm.
5. The electric heating film for sapphire windows according to claim 4, wherein the material of the protective layer (5) is silicon dioxide with a thickness of 1-5 μm.
6. The electric heating film for sapphire windows according to any of claims 1-5, wherein the pattern design is in the form of a periodically arranged square grid array with a line width of 10-30 μm, a period of 400-1200 μm and a ratio of line width to period of 1:40.
7. The method for preparing the electric heating film for the sapphire window according to any one of claims 1 to 6, comprising the steps of:
S1, taking a sapphire window (1) as a substrate, and manufacturing design patterns on the substrate in advance by adopting a photoetching technology;
S2, sequentially depositing chromium, gold and chromium on the surface of the substrate with the designed pattern to respectively form a bonding layer (2), a conductive layer (3) and a connecting layer (4);
s3, removing the adhesive layer, and plating a protective layer (5) on the surface of the substrate.
8. The method of claim 7, wherein the photolithography in step S1 comprises spraying a positive photoresist on a substrate, exposing with a mask exposure technique and developing with a developer.
9. The method of claim 8, wherein the surface of the substrate is cleaned prior to the positive photoresist spraying in step S1.
10. The method for preparing an electrically heated film for sapphire windows according to claim 7, wherein the bonding layer (2), the conductive layer (3), the connection layer (4) and the protective layer (5) are all vacuum evaporation plated and ion beam assisted techniques are used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410291985.1A CN118042656B (en) | 2024-03-14 | Electric heating film for sapphire window and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410291985.1A CN118042656B (en) | 2024-03-14 | Electric heating film for sapphire window and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN118042656A true CN118042656A (en) | 2024-05-14 |
| CN118042656B CN118042656B (en) | 2024-06-28 |
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| US20130299479A1 (en) * | 2011-02-04 | 2013-11-14 | Saint-Gobain Glass France | Heating element comprising films |
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| CN115995307A (en) * | 2022-12-09 | 2023-04-21 | 湖北久之洋红外系统股份有限公司 | Visible light and near infrared band transparent conductive film for electrothermal window and preparation method thereof |
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