CN118017958A - Microminiature high Q Gao Xielv attenuation band-pass filter - Google Patents

Abstract

The invention discloses a microminiature high Q Gao Xielv attenuation band-pass filter, and belongs to the technical field of band-pass filters. Comprises an LTCC ceramic body, an external electrode and a circuit layer in the LTCC ceramic body. The invention adopts a low-temperature co-firing ceramic process, three resonant units and three equivalent capacitors which form the filter are respectively arranged in 9 circuit layers in the LTCC ceramic body, the microwave characteristics of high Q value and wide stop band are achieved, the whole filter volume is only 1.6mm multiplied by 0.8mm multiplied by 0.65mm, and the invention is suitable for miniaturized wireless communication equipment with very strict volume requirements. By reasonably selecting the equivalent component values of the filter resonance units and optimizing the coupling relation of the equivalent components in the vertical space, transmission zero points can be introduced into the inductance components and are connected to the same grounding area, a group of inductance components is added to the input end, higher slope and inhibition effect can be achieved, and meanwhile, good insertion loss is achieved in the required stop band.

Description

Microminiature high Q Gao Xielv attenuation band-pass filter

Technical Field

The invention relates to a band-pass filter, in particular to a microminiature high-Q-value high-slope high-attenuation band-pass filter.

Background

With the rapid development of communication technology, small volume, high performance and low cost have become the necessary trend of the development of modern wireless communication equipment. The filter is used as a key device in a radio frequency and microwave system, and the performance quality of the filter directly influences the system index. The filter quality factor is expressed in terms of the ratio of the center frequency F of the filter to the-3 dB bandwidth B, i.e., q=f/B, describing the ability of the filter to separate adjacent frequency components in the signal. The larger the quality factor Q, the higher the resolution of the filter. The method for improving the quality factor of the filter in the prior art mainly comprises the steps of generating zero points through multipath effect, expanding stop band by utilizing a step impedance resonance structure,

The inversion of quarter wavelength transmission is utilized to generate zero points, and the hybrid coupling structure is utilized to generate zero points. However, the filters implemented by these methods have general problems in that they are complicated in structure or large in size, and are inconvenient to integrate with other compact mobile communication terminals. It is therefore a current research hotspot and difficulty how to achieve high Q, wide stop band and high rejection characteristics of filters in as small a volume as possible.

The low-temperature co-fired ceramic technology, namely the LTCC technology, is a passive integration technology which is rapidly developed in recent years, and an equivalent circuit of the filter can be embedded in the LTCC ceramic body through a mode of multilayer layout and via connection. Compared with other traditional filter forms, the filter has the following advantages: good compatibility and high frequency transmission characteristics, realization of multi-layer wiring and various cavity structures, higher integration and packing density, smaller volume weight and higher reliability, lower cost and shorter production period.

Disclosure of Invention

Aiming at the defects in the prior art, the invention aims at providing the ultra-small high Q-value Gao Xielv attenuation band-pass filter which can solve the urgent requirements of the existing mobile terminal system on a small-size, low-cost and high-performance filter, and realizes the wide stop band, high rejection and high Q value of the band-pass filter by utilizing the electromagnetic coupling of a resonance unit in the ultra-small size.

In order to achieve the above purpose, the invention adopts the following technical scheme:

A microminiature high Q Gao Xielv attenuation band-pass filter comprises an LTCC ceramic body, an external electrode and a circuit layer in the LTCC ceramic body; the external electrode comprises an input end external electrode, an output end external electrode and a grounding end external electrode; the external electrode comprises an input end external electrode, an output end external electrode and a grounding end external electrode which are symmetrically arranged at the bottom of the LTCC ceramic body and are electrically connected with a circuit of the circuit layer; the circuit layers in the LTCC ceramic body comprise a first circuit layer, a second circuit layer, a third circuit layer, a fourth circuit layer, a fifth circuit layer, a sixth circuit layer, a seventh circuit layer, an eighth circuit layer and a ninth circuit layer which are sequentially arranged from bottom to top; the second circuit layer, the fourth circuit layer, the fifth circuit layer and the ninth circuit layer are all electrically connected with the external electrode of the input end, the second circuit layer and the ninth circuit layer are all electrically connected with the external electrode of the output end, and the first circuit layer and the ninth circuit layer are all electrically connected with the external electrode of the grounding end; the first circuit layer is respectively connected with the second circuit layer, the third circuit layer, the sixth circuit layer and the ninth circuit layer, the second circuit layer is respectively connected with the third circuit layer, the fourth circuit layer, the fifth circuit layer, the eighth circuit layer and the ninth circuit layer, the third circuit layer is respectively connected with the fourth circuit layer, the sixth circuit layer and the ninth circuit layer, the fourth circuit layer is respectively connected with the fifth circuit layer and the ninth circuit layer, the fifth circuit layer is respectively connected with the sixth circuit layer, the eighth circuit layer and the ninth circuit layer, the sixth circuit layer is respectively connected with the seventh circuit layer and the ninth circuit layer, the seventh circuit layer is respectively connected with the eighth circuit layer and the ninth circuit layer, and the eighth circuit layer is connected with the ninth circuit layer.

The invention has the beneficial effects that: the filter adopts an LTCC multilayer layout structure, and generates transmission zero near a passband by utilizing the vertical coupling of resonance units among different circuit layers, so that higher quality factor, wider stopband range and higher out-of-band rejection are realized. Meanwhile, the filter has the characteristics of compact structure, miniaturization, low insertion loss and high isolation, has a small volume structure in the industry under the same frequency band, and is suitable for miniaturized wireless communication equipment with very strict volume requirements.

Further, the first circuit layer comprises a first electrode plate; the first electrode plate is electrically connected with the grounding end external electrode through a first via hole; the first electrode plate is respectively connected with the second circuit layer, the third circuit layer, the sixth circuit layer and the ninth circuit layer.

The second circuit layer comprises a second electrode plate, a third electrode plate and a fourth electrode plate; the second electrode plate and the first electrode plate are electrically connected with the external electrode of the input end through a second through hole to form an equivalent capacitor C1, the third electrode plate and the first electrode plate are electrically connected with the external electrode of the output end through a third through hole to form an equivalent capacitor C2, and the fourth electrode plate and the first electrode plate are electrically connected with the external electrode of the output end through a vertical coupling to form an equivalent capacitor C3; the second electrode plate is respectively connected with the fourth circuit layer, the fifth circuit layer, the eighth circuit layer and the ninth circuit layer; the third electrode plate is respectively connected with the fourth circuit layer and the ninth circuit layer; the fourth electrode plate is connected with the fourth circuit layer and the ninth circuit layer respectively.

The third circuit layer comprises a fifth electrode plate; the fifth electrode plate is connected with the first electrode plate through a fourth via hole; the fifth electrode plate is connected with the fourth circuit layer, the fifth electrode plate, the sixth circuit layer and the ninth circuit layer.

The fourth circuit layer comprises a sixth electrode plate and a seventh electrode plate; the sixth electrode plate and the fifth electrode plate of the third circuit layer are also connected with the fourth electrode plate of the second circuit layer through a fifth through hole, the seventh electrode plate and the fifth electrode plate of the third circuit layer are also connected with the third electrode plate through a sixth through hole to form an equivalent capacitor C2 through vertical coupling, and the seventh electrode plate and the fifth electrode plate of the third circuit layer are also connected with the third electrode plate through a sixth through hole; the sixth electrode plate is respectively connected with the fifth circuit layer and the ninth circuit layer; the seventh electrode plate is connected with the fifth circuit layer.

The fifth circuit layer comprises an eighth electrode plate and a ninth electrode plate; the eighth electrode plate and the sixth electrode plate of the fourth circuit layer are vertically coupled to form an equivalent capacitor C4, the eighth electrode plate and the sixth electrode plate of the fourth circuit layer are connected with the second electrode plate of the second circuit layer through a seventh via hole one by one, the second via hole is electrically connected with the external electrode of the input end, the ninth electrode plate and the sixth electrode plate of the fourth circuit layer are vertically coupled to form an equivalent capacitor C5, and the ninth electrode plate and the sixth electrode plate of the fourth circuit layer are connected with the seventh electrode plate of the fourth circuit layer through the eighth via hole;

The sixth circuit layer comprises a first microstrip line and a tenth electrode plate; the first microstrip line is respectively connected with a fifth electrode plate of the third circuit layer and a first electrode plate of the first circuit layer through a ninth via hole, and the tenth electrode plate is respectively coupled with an eighth electrode plate of the fifth circuit layer and a ninth electrode plate through a vertical coupling to form an equivalent bridging capacitor C6.

The seventh circuit layer comprises a second microstrip line; the second microstrip line is connected with the first microstrip line of the sixth circuit layer through a tenth via hole;

the eighth circuit layer comprises a third microstrip line and a fourth microstrip line; the third microstrip line is connected with the second microstrip line of the seventh circuit layer through an eleventh via hole, and the fourth microstrip line is respectively connected with the eighth electrode plate of the fifth circuit layer and the second electrode plate of the second circuit layer through a seventh via hole;

The ninth circuit layer comprises a fifth microstrip line; the fifth microstrip line is connected with the third microstrip line of the eighth circuit layer and the equivalent inductor L4 formed by the sixth circuit layer to the eighth circuit layer through a twelfth via hole, the fifth microstrip line is connected with the fifth electrode plate of the third circuit layer and the first electrode plate of the first circuit layer through a ninth via hole, the fifth microstrip line is connected with the sixth electrode plate of the fourth circuit layer through a thirteenth via hole, the fifth microstrip line is connected with the fourth microstrip line of the second circuit layer through a fifth via hole, the fifth microstrip line is connected with the eighth electrode plate of the fifth circuit layer and the second electrode plate of the second circuit layer through a seventh via hole, the fifth microstrip line is connected with the external electrode of the input end through a fifth via hole, the fifth microstrip line is connected with the fifth electrode plate of the third circuit layer through a thirteenth via hole, the fifth microstrip line is connected with the first electrode plate of the first circuit layer through a thirteenth via hole, the fifth microstrip line is connected with the fifth electrode plate of the fifth circuit layer through a fifth via hole, the fifth microstrip line is connected with the fifth electrode plate of the fifth circuit layer through a sixteenth via hole, and the fifth microstrip line is connected with the fifth electrode plate of the fifth circuit layer through a sixteenth via hole.

The beneficial effects of the above-mentioned further scheme are: the invention discloses a microminiature high Q value band-pass filter, which adopts a low temperature co-firing ceramic process, wherein 9 circuit layers are respectively arranged in a ceramic body in an inductance component, and the microminiature high Q value band-pass filter has the microwave characteristics of high Q value and wide stop band.

Still further, the first microstrip line, the second microstrip line, the third microstrip line, the ninth via hole, the tenth via hole and the eleventh via hole together form an equivalent inductance L4; the fifth microstrip line, the twelfth via hole and the fourteenth via hole together form an equivalent inductance L1, the fifth microstrip line, the thirteenth via hole and the fifteenth via hole together form an equivalent inductance L3, and the fifth microstrip line, the sixteenth via hole and the fifteenth via hole together form an equivalent inductance L2;

The equivalent capacitor C1 and the equivalent inductor L1 form a resonant unit U1, the equivalent capacitor C2 and the equivalent inductor L2 form a resonant unit U2, and the equivalent capacitor C3 and the equivalent inductor L3 form a resonant unit U3; the three resonant units, equivalent capacitors C4, C5 and C6 and equivalent inductor L4 jointly form the topological structure of the whole band-pass filter.

The beneficial effects of the above-mentioned further scheme are: by reasonably selecting the equivalent component values of the resonant units of the filter and optimizing the coupling relation of the equivalent components in the vertical space, three resonant units and three equivalent capacitors of the filter are formed, transmission zeros are introduced into the inductance components and are connected to the same grounding area, a group of inductance components are added to the input end, higher slope and inhibition effect can be achieved, and meanwhile, good insertion loss is achieved in the requirement stop band.

Drawings

Fig. 1 is a schematic diagram of an external form of a filter according to an embodiment of the present invention;

fig. 2 is a schematic diagram of an internal structure of a filter according to an embodiment of the present invention;

FIG. 3 is a schematic diagram of an internal first layer circuit of a filter according to an embodiment of the invention;

FIG. 4 is a schematic diagram of an internal second layer circuit of a filter according to an embodiment of the invention;

FIG. 5 is a schematic circuit diagram of the internal third layer of a filter according to an embodiment of the invention;

FIG. 6 is a schematic diagram of an internal fourth layer circuit of a filter according to an embodiment of the invention;

FIG. 7 is a schematic circuit diagram of the internal fifth layer of the filter according to an embodiment of the invention;

FIG. 8 is an internal sixth layer circuit schematic of a filter according to an embodiment of the invention;

FIG. 9 is an internal seventh layer circuit schematic of a filter according to an embodiment of the invention;

FIG. 10 is an internal eighth layer circuit schematic of a filter according to an embodiment of the invention;

FIG. 11 is an internal ninth layer circuit schematic of a filter according to an embodiment of the invention;

FIG. 12 is an equivalent schematic of a filter according to an embodiment of the invention;

FIG. 13 is a graph of electrical performance according to an embodiment of the present invention.

The device comprises a 35-mark, a 11-input end external electrode, a 12-output end external electrode, a 13-grounding external electrode, a 1-first electrode plate, a 2-second electrode plate, a 3-third electrode plate, a 4-fourth electrode plate, a 5-fifth electrode plate, a 6-sixth electrode plate, a 7-seventh electrode plate, an 8-eighth electrode plate, a 9-ninth electrode plate, a 10-tenth electrode plate, a l 4-first microstrip line, a l 5-second microstrip line, a l 6-third microstrip line, a l 7-fourth microstrip line, a l 8-fifth microstrip line, a 19-first via, a 20-second via, a 21-third via, a 22-fourth via, a 23-fifth via, a 24-sixth via, a 25-seventh via, a 26-eighth via, a 27-ninth via, a 28-tenth via, a 29-eleventh via, a 30-twelfth via, a 31-thirteenth via, a 32-fourteenth via, a 33-sixteenth via and 34-sixteenth via.

Detailed Description

The following description of the embodiments of the present invention is provided to facilitate understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and all the inventions which make use of the inventive concept are protected by the spirit and scope of the present invention as defined and defined in the appended claims to those skilled in the art.

Examples

As shown in fig. 1 to 13, the present invention provides a subminiature high Q Gao Xielv attenuation bandpass filter including an LTCC ceramic body, an external electrode, and a circuit layer within the LTCC ceramic body; the external electrode comprises an input end external electrode 11, an output end external electrode 12 and a grounding end external electrode 13; the external electrode comprises an input end external electrode 11, an output end external electrode 12 and a grounding end external electrode 13 which are symmetrically arranged at the bottom of the LTCC ceramic body and are electrically connected with a circuit of the circuit layer; the circuit layer in the LTCC ceramic body comprises a first circuit layer, a second circuit layer, a third circuit layer, a fourth circuit layer, a fifth circuit layer, a sixth circuit layer, a seventh circuit layer, an eighth circuit layer and a ninth circuit layer which are sequentially arranged from bottom to top.

The second circuit layer, the fourth circuit layer, the fifth circuit layer and the ninth circuit layer are all electrically connected with the input end external electrode 11, the second circuit layer and the ninth circuit layer are all electrically connected with the output end external electrode 12, and the first circuit layer and the ninth circuit layer are all electrically connected with the grounding end external electrode 13;

The first circuit layer is respectively connected with the second circuit layer, the third circuit layer, the sixth circuit layer and the ninth circuit layer, the second circuit layer is respectively connected with the third circuit layer, the fourth circuit layer, the fifth circuit layer, the eighth circuit layer and the ninth circuit layer, the third circuit layer is respectively connected with the fourth circuit layer, the sixth circuit layer and the ninth circuit layer, the fourth circuit layer is respectively connected with the fifth circuit layer and the ninth circuit layer, the fifth circuit layer is respectively connected with the sixth circuit layer, the eighth circuit layer and the ninth circuit layer, the sixth circuit layer is respectively connected with the seventh circuit layer and the ninth circuit layer, the seventh circuit layer is respectively connected with the eighth circuit layer and the ninth circuit layer, and the eighth circuit layer is connected with the ninth circuit layer.

As shown in fig. 1, the multilayer circuit of the filter was built in a mixed dielectric body having a size of 1.6mm×0.8mm×0.6mm, and sintered and molded at 890 ℃. The external electrodes of the filter comprise an input external electrode 11, an output external electrode 12 and a grounding external electrode 13. The identification 35 symbol on top of the filter is used to identify the location of each port.

As shown in fig. 2, the filter is internally provided as a multi-layer circuit including a first electrode plate 1 at a first circuit layer, a second electrode plate 2 at a second circuit layer, a third electrode plate 3 and a fourth electrode plate 4, a fifth electrode plate 5 at a third circuit layer, a sixth electrode plate 6 and a seventh electrode plate 7 at a fourth circuit layer, an eighth electrode plate 8 and a ninth electrode plate 9 at a fifth circuit layer, a tenth electrode plate 10 and a first microstrip line 14 at a sixth circuit layer, a second microstrip line 15 at a seventh circuit layer, a third microstrip line 16 and a fourth microstrip line l7 at an eighth circuit layer, and a fifth microstrip line l8 at a ninth circuit layer.

As shown in fig. 3, the first circuit layer includes a first electrode plate 1; the first electrode plate 1 is electrically connected with the grounding end external electrode 13 through a first via hole 19;

As shown in fig. 4, the second circuit layer includes a second electrode plate 2, a third electrode plate 3, and a fourth electrode plate 4; the second electrode plate 2 and the first electrode plate 1 are vertically coupled to form an equivalent capacitor C1, the second electrode plate 2 and the first electrode plate 1 are electrically connected with the input end external electrode 11 through a second via hole 20, the third electrode plate 3 and the first electrode plate 1 are vertically coupled to form an equivalent capacitor C2, and the third electrode plate 3 is electrically connected with the output end external electrode 12 through a third via hole 21 and a third via hole 21; the fourth electrode plate 4 and the first electrode plate 1 are vertically coupled to form an equivalent capacitor C3;

As shown in fig. 5, the third circuit layer includes a fifth electrode plate 5; the fifth electrode plate 5 is connected with the first electrode plate 1 through a fourth via hole 22;

As shown in fig. 6, the fourth circuit layer includes a sixth electrode plate 6 and a seventh electrode plate 7; the sixth electrode plate 6 and the fifth electrode plate 5 of the third circuit layer are vertically coupled to form an equivalent capacitor C3, the sixth electrode plate 6 and the fifth electrode plate 5 of the third circuit layer are connected with the fourth electrode plate 4 of the second circuit layer through a fifth via hole 23, the seventh electrode plate 7 and the fifth electrode plate 5 of the third circuit layer are vertically coupled to form an equivalent capacitor C2, and the seventh electrode plate 7 and the fifth electrode plate 5 of the third circuit layer are connected with the third electrode plate 3 through a sixth via hole 24;

The fifth circuit layer includes an eighth electrode plate 8 and a ninth electrode plate 9 as shown in fig. 7; the eighth electrode plate 8 and the sixth electrode plate 6 of the fourth circuit layer are vertically coupled to form an equivalent capacitor C4, the eighth electrode plate 8 and the sixth electrode plate 6 of the fourth circuit layer are uniformly connected with the second electrode plate 2 of the second circuit layer through a seventh via hole 25 and are electrically connected with the external electrode 11 of the input end through a second via hole 20, the ninth electrode plate 9 and the sixth electrode plate 6 of the fourth circuit layer are vertically coupled to form an equivalent capacitor C5, and the ninth electrode plate 9 and the sixth electrode plate 6 of the fourth circuit layer are connected with the seventh electrode plate 7 of the fourth circuit layer through an eighth via hole 26;

The sixth circuit layer includes a first microstrip line 14 and a tenth electrode plate 10 as shown in fig. 8; the first microstrip line 14 is respectively connected with the fifth electrode plate 5 of the third circuit layer and the first electrode plate 1 of the first circuit layer through a ninth via hole 27, and the tenth electrode plate 10 is respectively coupled with the eighth electrode plate 8 and the ninth electrode plate 9 of the fifth circuit layer through a vertical coupling to form an equivalent bridging capacitor C6;

as shown in fig. 9, the seventh circuit layer includes a second microstrip line 15; the second microstrip line 15 is connected to the first microstrip line 14 of the sixth circuit layer through a tenth via 28;

As shown in fig. 10, the eighth circuit layer includes a third microstrip line 16 and a fourth microstrip line 17; the third microstrip line 16 is connected to the second microstrip line 15 of the seventh circuit layer through an eleventh via 29, and the fourth microstrip line 17 is connected to the eighth electrode plate 8 of the fifth circuit layer and the second electrode plate 2 of the second circuit layer through a seventh via 25, respectively;

Microstrip lines in the sixth circuit layer to the eighth circuit layer are connected end to end through metal vias in sequence, and the equivalent is inductance; the first microstrip line 14, the second microstrip line 15, the third microstrip line 16, the ninth via 27, the tenth via 28 and the eleventh via 29 together form an equivalent inductance L4;

As shown in fig. 11, the ninth circuit layer includes a fifth microstrip line 18; the fifth microstrip line 18 is connected with the third microstrip line 16 of the eighth circuit layer and the equivalent inductance L4 formed by the sixth circuit layer to the eighth circuit layer through a twelfth via 30, the fifth microstrip line 18 is connected with the fifth electrode plate 5 of the third circuit layer and the first electrode plate 1 of the first circuit layer through a ninth via 27, the fifth microstrip line 18 is connected with the sixth electrode plate 6 of the fourth circuit layer through a thirteenth via 31, the fifth microstrip line 18 is connected with the fourth electrode plate 4 of the second circuit layer through a fifth via 23, the fifth microstrip line 18 is connected with the fourth microstrip line 17 of the eighth circuit layer through a fourteenth via 32, the fifth microstrip line 18 is connected with the fifth electrode plate 8 of the fifth circuit layer and the second electrode plate 2 of the second circuit layer through a seventh via 25, the fifth microstrip line 18 is electrically connected with the input end external electrode 11 through a second via 20, the fifth microstrip line 18 is connected with the fifth electrode plate 5 of the third circuit layer through a thirteenth via 33, the fifth microstrip line 18 is connected with the fifth electrode plate 1 of the fifth circuit layer through a fifth via 18, the fifth electrode plate 18 is connected with the fifth electrode plate 1 of the fifth microstrip line through a fifth via 18, the fifth electrode plate 18 is connected with the fifth electrode plate 18 through a fifth via 13;

Microstrip lines in the ninth circuit layer are connected together through metal vias and are respectively equivalent to three inductors; the fifth microstrip line 18, the twelfth via 30 and the fourteenth via 32 together form an equivalent inductance L1, the fifth microstrip line 18, the thirteenth via 31 and the fifteenth via 33 together form an equivalent inductance L3, and the fifth microstrip line 18, the sixteenth via 34 and the fifteenth via 33 together form an equivalent inductance L2;

as shown in fig. 12, the equivalent capacitor C1 and the equivalent inductor L1 form a resonant unit U1, the equivalent capacitor C2 and the equivalent inductor L2 form a resonant unit U2, and the equivalent capacitor C3 and the equivalent inductor L3 form a resonant unit U3; the three resonant units, equivalent capacitors C4, C5 and C6 and equivalent inductor L4 jointly form the topological structure of the whole band-pass filter.

As shown in fig. 13, the passband frequency of the filter is 2400-2500 MHz, and the loss in the passband is lower than 1.4dB; the stop band suppression from 0MHz to 960MHz is greater than 20dB, and the stop band suppression from 3.2GHz to 7.5GHz is greater than 35dB.

The invention can embed the multi-layer circuit of the filter into the ceramic dielectric body based on the low-temperature co-firing ceramic process, realize the integration of various equivalent components on the three-dimensional circuit substrate, and realize the miniaturization and high density of the circuit. High conductivity metallic materials such as silver, copper may be used as conductor materials to facilitate improved quality factors for the circuitry. For example, palladium-silver can be used as the embedded metal material, oxidation can not occur during sintering, and electroplating protection can be omitted. The size of the whole filter is only 1.6mm multiplied by 0.8mm multiplied by 0.6mm, the performance of the filter bandpass filter is good, the relative dielectric constant of the ceramic material is 35, the dielectric loss angle is 0.002, the in-band frequency is 2400-2500MHz, the in-passband loss is lower than 1.4dB, and the stopband range is from 500-960MHz and 3200MHz to 7500MHz. The stop band suppression from 500-960MHz is more than 20dB, and the out-of-band suppression of the filter is more than 35dB in the 3200MHz frequency band close to the frequency band. The invention has smaller volume structure in the industry under the same frequency band, good microwave characteristic, adopts a standard patch packaging mode, has high integration level, and is applied to a 2.4GHz wireless communication system, including a WLAN card, a Bluetooth module and the like.

In summary, the present invention provides a microminiature high Q Gao Xielv attenuation bandpass filter based on multilayer interconnection technology. Has the excellent performances of high Q value, small volume, low insertion loss, high attenuation and the like. Meanwhile, on the premise of ensuring that the electrical performance is not affected, the tolerance degree of the processing technology is improved to the greatest extent, higher technology stability and consistency are realized, and the integrated circuit module is easy to integrate with other circuit modules, so that the integrated circuit module has wide application prospect in the field of new-generation wireless communication.

The various illustrative logical blocks, modules, circuits, and algorithm steps described in connection with the disclosure herein may be implemented as electronic hardware, computer software, or combinations of both.

The flowcharts and block diagrams of the figures illustrate the architecture, functionality, and operation of possible implementations of systems and methods according to various embodiments of the present invention. In this regard, each block of the flowchart or block diagrams may represent a module, segment, or portion of program code, which comprises one or more executable instructions for implementing the specified logical function(s). In some alternative embodiments, the functions noted in the block may occur out of the order noted in the figures. For example, two consecutive blocks may actually be performed substantially in parallel, and they may sometimes be performed in the reverse order according to the related functions. It will also be noted that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware and computer instructions.

The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.

Claims (10)

1. A microminiature high Q Gao Xielv attenuation band-pass filter is characterized in that: the high-voltage power source comprises an LTCC ceramic body, an external electrode and a circuit layer in the LTCC ceramic body;

The external electrode comprises an input end external electrode (11), an output end external electrode (12) and a grounding end external electrode (13), wherein the input end external electrode (11), the output end external electrode (12) and the grounding end external electrode (13) are symmetrically arranged at the bottom of the LTCC ceramic body and are electrically connected with a circuit of the circuit layer;

the circuit layers in the LTCC ceramic body comprise a first circuit layer, a second circuit layer, a third circuit layer, a fourth circuit layer, a fifth circuit layer, a sixth circuit layer, a seventh circuit layer, an eighth circuit layer and a ninth circuit layer which are sequentially arranged from bottom to top;

the second circuit layer, the fourth circuit layer, the fifth circuit layer and the ninth circuit layer are electrically connected with the input end external electrode (11), the second circuit layer and the ninth circuit layer are electrically connected with the output end external electrode (12), and the first circuit layer and the ninth circuit layer are electrically connected with the grounding end external electrode (13);

The first circuit layer is respectively connected with the second circuit layer, the third circuit layer, the sixth circuit layer and the ninth circuit layer, the second circuit layer is respectively connected with the third circuit layer, the fourth circuit layer, the fifth circuit layer, the eighth circuit layer and the ninth circuit layer, the third circuit layer is respectively connected with the fourth circuit layer, the sixth circuit layer and the ninth circuit layer, the fourth circuit layer is respectively connected with the fifth circuit layer and the ninth circuit layer, the fifth circuit layer is respectively connected with the sixth circuit layer, the eighth circuit layer and the ninth circuit layer, the sixth circuit layer is respectively connected with the seventh circuit layer and the ninth circuit layer, the seventh circuit layer is respectively connected with the eighth circuit layer and the ninth circuit layer, and the eighth circuit layer is connected with the ninth circuit layer.

2. The ultra-small high Q Gao Xielv attenuation bandpass filter according to claim 1, wherein: the first circuit layer comprises a first electrode plate (1); the first electrode plate (1) is electrically connected with the grounding end external electrode (13) through a first via hole (19);

The first electrode plate (1) is respectively connected with the second circuit layer, the third circuit layer, the sixth circuit layer and the ninth circuit layer.

3. The ultra-small high Q Gao Xielv attenuation bandpass filter according to claim 2, wherein: the second circuit layer comprises a second electrode plate (2), a third electrode plate (3) and a fourth electrode plate (4);

The second electrode plate (2) and the first electrode plate (1) are vertically coupled to form an equivalent capacitor C1, the second electrode plate (2) and the first electrode plate (1) are electrically connected with an external electrode (11) at an input end through a second via hole (20), the third electrode plate (3) and the first electrode plate (1) are vertically coupled to form an equivalent capacitor C2, the third electrode plate (3) is electrically connected with an external electrode (12) at an output end through a third via hole (21), and the fourth electrode plate (4) and the first electrode plate (1) are vertically coupled to form an equivalent capacitor C3;

The second electrode plate (2) is respectively connected with the fourth circuit layer, the fifth circuit layer, the eighth circuit layer and the ninth circuit layer; the third electrode plate (3) is respectively connected with the fourth circuit layer and the ninth circuit layer; the fourth electrode plate (4) is respectively connected with the fourth circuit layer and the ninth circuit layer.

4. A subminiature high Q Gao Xielv attenuation bandpass filter as set forth in claim 3, wherein: the third circuit layer comprises a fifth electrode plate (5);

The fifth electrode plate (5) is connected with the first electrode plate (1) through a fourth via hole (22);

the fifth electrode plate (5) is connected with the fourth circuit layer, the fifth electrode plate, the sixth circuit layer and the ninth circuit layer.

5. The ultra-small high Q Gao Xielv attenuation bandpass filter according to claim 4, wherein: the fourth circuit layer comprises a sixth electrode plate (6) and a seventh electrode plate (7);

The sixth electrode plate (6) and the fifth electrode plate (5) of the third circuit layer are vertically coupled to form an equivalent capacitor C3, the sixth electrode plate (6) and the fifth electrode plate (5) of the third circuit layer are connected with the fourth electrode plate (4) of the second circuit layer through a fifth via hole (23), the seventh electrode plate (7) and the fifth electrode plate (5) of the third circuit layer are vertically coupled to form an equivalent capacitor C2, and the seventh electrode plate (7) and the fifth electrode plate (5) of the third circuit layer are connected with the third electrode plate (3) through a sixth via hole (24);

the sixth electrode plate (6) is respectively connected with the fifth circuit layer and the ninth circuit layer; the seventh electrode plate (7) is connected with the fifth circuit layer.

6. The ultra-small high Q Gao Xielv attenuation bandpass filter according to claim 5, wherein: the fifth circuit layer comprises an eighth electrode plate (8) and a ninth electrode plate (9);

The eighth electrode plate (8) and the sixth electrode plate (6) of the fourth circuit layer form an equivalent capacitor C4 through vertical coupling, the eighth electrode plate (8) and the sixth electrode plate (6) of the fourth circuit layer are uniformly connected with the second electrode plate (2) of the second circuit layer through a seventh through hole (25), the second through hole (20) is electrically connected with the external electrode (11) of the input end, the ninth electrode plate (9) and the sixth electrode plate (6) of the fourth circuit layer form an equivalent capacitor C5 through vertical coupling, and the ninth electrode plate (9) and the sixth electrode plate (6) of the fourth circuit layer are connected with the seventh electrode plate (7) of the fourth circuit layer through an eighth through hole (26);

The eighth electrode plate (8) is respectively connected with the sixth circuit layer, the eighth circuit layer and the ninth circuit layer, and the ninth electrode plate (9) is connected with the sixth circuit layer.

7. The ultra-small high Q Gao Xielv attenuation bandpass filter according to claim 6, wherein: the sixth circuit layer comprises a first microstrip line (14) and a tenth electrode plate (10);

The first microstrip line (14) is respectively connected with a fifth electrode plate (5) of the third circuit layer and a first electrode plate (1) of the first circuit layer through a ninth via hole (27), and the tenth electrode plate (10) is respectively coupled with an eighth electrode plate (8) and a ninth electrode plate (9) of the fifth circuit layer through a vertical coupling to form an equivalent bridging capacitor C6.

8. The ultra-small high Q Gao Xielv attenuation bandpass filter according to claim 7, wherein: the seventh circuit layer comprises a second microstrip line (15);

The second microstrip line (15) is connected with the first microstrip line (14) of the sixth circuit layer through a tenth via hole (28);

The eighth circuit layer comprises a third microstrip line (16) and a fourth microstrip line (17);

The third microstrip line (16) is connected with the second microstrip line (15) of the seventh circuit layer through an eleventh via hole (29), and the fourth microstrip line (17) is respectively connected with the eighth electrode plate (8) of the fifth circuit layer and the second electrode plate (2) of the second circuit layer through a seventh via hole (25).

9. The ultra-small high Q Gao Xielv attenuation bandpass filter according to claim 8, wherein: the ninth circuit layer includes a fifth microstrip line (18);

The fifth microstrip line (18) is respectively connected with a third microstrip line (16) of the eighth circuit layer and an equivalent inductor L4 formed by the sixth circuit layer to the eighth circuit layer through a twelfth via hole (30), the fifth microstrip line (18) is respectively connected with a fifth electrode plate (5) of the third circuit layer and a first electrode plate (1) of the first circuit layer through a ninth via hole (27), the fifth microstrip line (18) is connected with a sixth electrode plate (6) of the fourth circuit layer through a thirteenth via hole (31), the fifth microstrip line (18) is connected with a fourth electrode plate (4) of the second circuit layer through a fifth via hole (23), the fifth microstrip line (18) is connected with a fourth microstrip line (17) of the eighth circuit layer through a fourteenth via hole (32), the fifth microstrip line (18) is respectively connected with an eighth electrode plate (8) of the fifth circuit layer and a second electrode plate (2) of the second circuit layer through a seventh via hole (25), the fifth microstrip line (18) is connected with a fifth electrode plate (17) of the fifth circuit layer through a fifth via hole (20) and an external electrode plate (33) of the fifth circuit layer through a fifth via hole (11), the fifth microstrip line (18) is electrically connected with the first electrode plate (1) of the first circuit layer and the grounding end external electrode (13) through the first via hole (19), the fifth microstrip line (18) is connected with the fifth electrode plate (5) of the third circuit layer through the sixteenth via hole (34), the fifth microstrip line (18) is connected with the third electrode plate (3) of the second circuit layer through the sixth via hole (24), and the fifth microstrip line (18) is electrically connected with the output end external electrode (12) through the third via hole (21).

10. The ultra-small high Q Gao Xielv attenuation bandpass filter according to claim 9, wherein: the first microstrip line (14), the second microstrip line (15), the third microstrip line (16), the ninth via (27), the tenth via (28) and the eleventh via (29) together form an equivalent inductance L4, the fifth microstrip line (18), the twelfth via (30) and the fourteenth via (32) together form an equivalent inductance L1, the fifth microstrip line (18), the thirteenth via (31) and the fifteenth via (33) together form an equivalent inductance L3, and the fifth microstrip line (18), the sixteenth via (34) and the fifteenth via (33) together form an equivalent inductance L2;

the equivalent capacitor C1 and the equivalent inductor L1 form a resonant unit U1, the equivalent capacitor C2 and the equivalent inductor L2 form a resonant unit U2, and the equivalent capacitor C3 and the equivalent inductor L3 form a resonant unit U3;

The three resonant units, equivalent capacitors C4, C5 and C6 and equivalent inductor L4 jointly form the topological structure of the whole band-pass filter.