CN118016546A - Etching end point detection device and method - Google Patents
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Abstract
The invention provides an etching end point detection device and method, the device includes: the light source is used for providing incident light, the light splitter is used for splitting the incident light into transmitted light and first reflected light, and the first reflected light irradiates the substrate and is reflected by a material layer on the substrate to obtain second reflected light; the first light detector receives the light signal of the transmitted light, the second light detector receives the light signal of the second reflected light, the controller is connected with the first light detector and the second light detector respectively, and the controller determines the etching endpoint according to the received light signal intensity change of the transmitted light and the light signal intensity change of the second reflected light, namely, the controller analyzes according to the intensity change of the output light relative to the input light to determine the etching endpoint. The etching end point detection device and the etching end point detection method have the beneficial effect of high detection accuracy.
Description
Technical Field
The present invention relates to the field of integrated circuit manufacturing technologies, and in particular, to an etching endpoint detection apparatus and method.
Background
Etching is a process of selectively removing unwanted materials from the surface of a substrate by chemical or physical means and is an important step in the semiconductor manufacturing process. Generally, the etching method includes dry etching including photo-evaporation, vapor phase etching, plasma etching, and the like, and wet etching. Wet etching is a pure chemical reaction process, and the wet etching utilizes chemical reaction between a solution and a material to be etched (such as a photosensitive film or a metal film) to remove the material to be etched, so that the wet etching has the advantages of good selectivity, good repeatability, high production efficiency, simple equipment and low cost, and has wide application in the semiconductor process.
In the existing wet etching, a rotary etching process is generally adopted, a substrate to be etched is placed on a carrying table in the rotary etching process, then the carrying table is rotated to drive the substrate to rotate, and etching liquid is sprayed to the substrate at the same time, so that the material to be etched on the substrate is removed. Generally, in order to ensure complete removal of a material to be etched and avoid over-etching, it is necessary to perform etching endpoint detection during etching to control etching time and stop etching in time.
Currently, an end point detector is generally used for detecting an etching end point, and the end point detector detects the etching end point by utilizing a reflection and transmission principle. Because the reflectivities of different material layers are different, and the reflectivities of the material layers and the substrate are also different, the reflectivity of the material layers is gradually changed along with the gradual etching of the material layers in the etching process, so that whether the etching endpoint is reached can be judged according to the optical signals reflected by the material layers. For example, when a metal film is etched, light is generally hardly passed through the metal film, and a part of the light is reflected by the metal film, so that the light reflected by the metal film can be measured by a sensor of an end point detector, and when the end point detector receives a light signal reflected from the metal film, it is determined that the etching end point is not reached. When the metal film is completely etched, the optical signal only measures the reflection of the transparent substrate, the reflected optical signal received by the end point detector changes, and the end point detector judges that the etching end point is reached and stops etching. The end point detector can detect the etching end point in real time in the process of substrate rotation, thereby realizing etching end point monitoring. However, the existing end point detecting machine has the following technical problems in the using process: the endpoint detector detects the etching endpoint mainly by measuring the reflected light, and for the mask substrate, since the anti-reflective coating is coated on the metal film, the difference between the reflectivity of the metal film and the reflectivity of the transparent glass substrate is not too large. Therefore, it is necessary to precisely measure the variation of the reflected optical signal during etching. However, the light source of the end point detector cannot always provide stable output due to the influence of factors such as current, voltage, temperature and device interference, so that the intensity of the optical signal emitted by the end point detector can fluctuate, and the intensity of the reflected optical signal can fluctuate accordingly, thus the end point detector is easy to misjudge, and the accuracy of end point etching detection is affected. For example, still taking etching a metal film as an example, the intensity of light emitted from a light source of an end point detector suddenly decreases or decreases during etching, and the intensity of reflected light decreases or decreases accordingly, so if the intensity change of reflected light caused by the intensity change of light provided from the light source cannot be accurately measured, even if etching is not finished, the intensity of light provided from the light source changes, and the intensity of reflected light also changes accordingly, the etching end point cannot be accurately determined according to the detected change of reflected light, and misjudgment of the etching end point frequently occurs. In summary, the existing endpoint detection machine has the technical problems of easy misjudgment and low detection accuracy.
Disclosure of Invention
The invention aims to provide an etching end point detection device and method, which are used for solving the technical problems of easy misjudgment and low detection accuracy of the existing end point detection machine.
In order to achieve the above object, in one aspect, the present invention provides an etching end point detection apparatus, including:
A light source for providing incident light;
The light separator is used for separating incident light provided by the light source into transmitted light and first reflected light, the transmitted light is transmitted through the light separator, the first reflected light irradiates the substrate, the substrate is provided with a material layer to be etched, the material layer has a reflection effect on light, and the first reflected light is reflected by the material layer to obtain second reflected light;
a first photodetector that receives an optical signal of the transmitted light separated by the optical separator;
A second photodetector that receives an optical signal of the second reflected light;
And the controller is respectively connected with the first light detector and the second light detector, and determines an etching end point according to the received light signal intensity change of the transmitted light and the received light signal intensity change of the second reflected light.
According to the etching end point detection device, the incident light provided by the light source is separated into the transmitted light and the first reflected light through the light separator, the first reflected light is reflected by the material layer to obtain the second reflected light, the first light detector and the second light detector respectively detect light signals of the transmitted light and the second reflected light in real time in the etching process and send the light signals to the controller, and the controller determines an etching end point according to the received light signal intensity change of the transmitted light and the light signal intensity change of the second reflected light, namely, analysis is carried out according to the intensity change of the output light relative to the input light so as to determine the etching end point. According to the etching end point detection device, the etching end point is determined through the light signal intensity change of the transmitted light and the light signal intensity change of the second reflected light, wherein the transmitted light is emitted by the light source, the light signal intensity of the transmitted light changes along with the light signal intensity change of the light source, and the etching end point is determined by combining the light signal intensity of the second reflected light and the light signal intensity of the transmitted light, so that the etching end point can be determined without being influenced by the light signal intensity fluctuation of the light source, and the misjudgment of the etching end point caused by the light signal intensity change of the light source can be effectively avoided. Therefore, the etching end point detection device can effectively avoid misjudgment of the etching end point caused by fluctuation of the optical signal of the incident light, and has the beneficial effect of high accuracy of etching end point detection.
In one embodiment, the etching end point detection device further includes: a beamformer located between the light source and the optical splitter.
In one embodiment, the etching end point detection device further includes: an optical homogenizer located between the beamformer and the optical separator.
In one of the embodiments of the present invention,
The etching end point detection device further comprises: an aperture lens located between the light separator and the laser;
And/or the number of the groups of groups,
The etching end point detection device further comprises: and a focusing lens, wherein a first position is arranged between the first light detector and the light separator, a second position is arranged between the second light detector and the substrate, a third position is arranged between the substrate and the light separator, and the focusing lens is at least positioned at one of the first position, the second position and the third position.
In one embodiment, the wavelength of the incident light is not less than 450nm; and/or the transmittance of the light separator is 10% -50%, and the reflectance of the light separator is 50% -90%.
In one embodiment, the controller calculates a current reflectance value of the material layer according to the optical signal intensity of the second reflected light and the optical signal intensity of the transmitted light, compares the calculated current reflectance value of the material layer with a pre-stored reflectance set value, and determines that an etching endpoint is reached when the current reflectance value of the material layer reaches the reflectance set value;
And/or the number of the groups of groups,
The controller calculates the slope of the reflectivity change curve of the material layer according to the optical signal intensity of the second reflected light, the optical signal intensity of the transmitted light and the etching time, compares the calculated slope of the reflectivity change curve of the material layer with a pre-stored curve slope set value, and determines that the etching endpoint is reached when the slope of the reflectivity change curve of the material layer reaches the curve slope set value.
In one of the embodiments of the present invention,
The material layer is a photosensitive film, and the reflectivity set value is as follows: 10% -20%;
or alternatively, the first and second heat exchangers may be,
The material layer is a metal film, and the reflectivity set value is as follows: 6 to 10 percent.
On the other hand, the invention also provides an etching end point detection method, which comprises the following steps:
Providing incident light with a preset intensity value when etching is started, wherein the incident light is configured to be separated into transmitted light and first reflected light according to a preset proportion, and the first reflected light irradiates a substrate and forms second reflected light after being reflected by a material layer on the substrate;
detecting an optical signal of the transmitted light and an optical signal of the second reflected light;
And determining an etching end point according to the optical signal intensity change of the transmitted light and the optical signal intensity change of the second reflected light, and determining that the etching end point is reached when the optical signal intensity change of the transmitted light and the optical signal intensity change of the second reflected light reach a set target value.
The etching end point detection method has the beneficial effects that the erroneous judgment of the etching end point can be effectively avoided, and the accuracy of etching end point detection is high by using the etching end point detection device to detect the etching end point.
In one embodiment, the determining the etching end point according to the optical signal intensity variation of the transmitted light and the optical signal intensity variation of the second reflected light, and when the optical signal intensity variation of the transmitted light and the optical signal intensity variation of the second reflected light reach the set target value, determining that the etching end point is reached includes:
calculating a current reflectance value of the material layer according to the optical signal intensity of the second reflected light and the optical signal intensity of the transmitted light;
Comparing the calculated current reflectivity value of the material layer with a pre-stored reflectivity set value;
When the current reflectivity value of the material layer reaches the reflectivity set value, determining that the etching end point is reached;
And/or the number of the groups of groups,
The step of determining an etching end point according to the optical signal intensity variation of the transmitted light and the optical signal intensity variation of the second reflected light, when the optical signal intensity variation of the transmitted light changes and the optical signal intensity variation of the second reflected light reaches a set target value, the step of determining that the etching end point is reached includes:
Calculating the slope of the reflectivity change curve of the material layer according to the optical signal intensity of the second reflected light, the optical signal intensity of the transmitted light and the etching time;
comparing the calculated slope of the reflectivity change curve of the material layer with a pre-stored curve slope set value;
and determining that the etching end point is reached when the slope of the reflectivity change curve of the material layer reaches the curve slope set value.
In one of the embodiments of the present invention,
The material layer is a photosensitive film, and the reflectivity set value is as follows: 10% -20%;
or alternatively, the first and second heat exchangers may be,
The material layer is a metal film, and the reflectivity set value is as follows: 6 to 10 percent.
Drawings
FIG. 1 is a schematic diagram of an etching end point detection device according to an embodiment;
FIG. 2 is a flow chart of an embodiment of a method for detecting an etch endpoint.
Reference numerals illustrate:
1-light source, 2-beam former, 3-light homogenizer, 4-aperture lens, 5-light separator, 6-first light detector, 7-second light detector, 8-focusing lens, 9-substrate, 10-material layer, 11-photosensitive film, 12-metal film, 13-light-transmitting substrate, 14-transmitted light, 15-first reflected light, 16-second reflected light, 17-incident light.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the invention may be practiced without one or more of these details. In other instances, well-known features have not been described in detail in order to avoid obscuring the invention. It should be understood that the present invention may be embodied in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Like numbers refer to like elements throughout. It will be understood that when a layer is referred to as being formed on another layer, it can be directly formed on the other layer or intervening film layers may be present. Where the terms "upper", "lower", "front", "back", etc. indicate an orientation or positional relationship based on that shown in the drawings, for convenience of description and simplicity of description only, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the invention, where "longitudinal" may be construed as a direction perpendicular to the substrate surface and "transverse" may be construed as a direction parallel to the substrate surface. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and/or groups. As used herein, the term "and/or" includes any and all combinations of the associated listed items. The terms "identical," "equivalent," and "identical" include the meaning of being identical and identical, as well as the meaning of being approximately identical or approximately identical, under the allowable process errors. The terms "first," "second," and the like in the description are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments of the invention described herein are, for example, capable of operation in other sequences than described or illustrated herein. Similarly, if a method described herein comprises a series of steps, and the order of the steps presented herein is not necessarily the only order in which the steps may be performed, and some of the described steps may be omitted and/or some other steps not described herein may be added to the method. If a component in one drawing is identical to a component in another drawing, the component will be easily recognized in all drawings, but in order to make the description of the drawings clearer, the specification does not refer to all the identical components in each drawing.
The present invention will be more fully described by way of examples below with reference to the accompanying drawings, which, however, are not intended to limit the scope of the invention.
The invention provides an etching end point detection device and method, which can effectively avoid misjudgment of an etching end point caused by fluctuation of an optical signal of incident light and can effectively improve the accuracy of etching end point detection. The device and the method can be used for etching processes at various stages in the semiconductor manufacturing process. For convenience of description, the following embodiments will take an example of a process of etching and regenerating a transparent substrate, in which the etching end point detection device and method of the present invention are applied to a mask substrate, and specifically take the transparent substrate as a quartz substrate, the metal film includes at least one metal layer of CrN, crO, crC, crCO, crCN and Cr, and the photosensitive film is a photoresist layer.
Referring to fig. 1, an etching end point detection apparatus according to an embodiment includes:
A light source 1 for providing incident light 17.
The light separator 5 is configured to separate incident light provided by the light source 1 into transmitted light 14 and first reflected light 15, the transmitted light 14 passes through the light separator 5, the first reflected light 15 irradiates the substrate 9, the substrate 9 has a material layer 10 to be etched, the material layer 10 has a reflection effect on light, and the first reflected light 15 is reflected by the material layer 10 to obtain second reflected light 16.
The first photodetector 6 receives the optical signal of the transmitted light 14 separated by the optical separator 5.
The second photodetector 7 is configured to receive the optical signal of the second reflected light 16.
And a controller connected to the first photodetector 6 and the second photodetector 7, respectively, and determining an etching end point according to the received light signal intensity variation of the transmitted light 14 and the light signal intensity variation of the second reflected light 16.
The etching endpoint detection device of this embodiment separates the incident light 17 provided by the light source 1 into the transmitted light 14 and the first reflected light 15 by the light separator 5, the first reflected light 15 is reflected by the material layer 10 to obtain the second reflected light 16, the first light detector 6 and the second light detector 7 respectively detect the light signals of the transmitted light 14 and the second reflected light 16 in real time during etching and send the light signals to the controller, and the controller determines the etching endpoint according to the received light signal intensity change of the transmitted light 14 and the light signal intensity change of the second reflected light 16, that is, analyzes according to the intensity change of the output light relative to the input light to determine the etching endpoint. The etching end point detection device determines the etching end point through the light signal intensity change of the transmitted light 14 and the light signal intensity change of the second reflected light 16, wherein the transmitted light 14 is from the incident light 17 emitted by the light source 1, the light signal intensity of the transmitted light 14 changes along with the light signal intensity change of the light source 1, and the combination of the light signal intensity of the second reflected light 16 and the light signal intensity of the transmitted light 14 to determine the etching end point can ensure that the judgment of the etching end point is not influenced by the light signal intensity fluctuation of the light source 1, thereby effectively avoiding the erroneous judgment of the etching end point caused by the light signal intensity change of the light source 1. Therefore, the etching end point detection device can effectively avoid misjudgment of the etching end point caused by fluctuation of the optical signal of the incident light 17, and has the beneficial effect of high etching end point detection accuracy.
Specifically, the light separator 5 has a preset transmittance-reflectance ratio, and preferably, in one embodiment, the transmittance of the light separator 5 is 10% to 50% and the reflectance of the light separator 5 is 50% to 90%. In order to ensure that the second reflected light 16 has a sufficient intensity to avoid affecting the detection accuracy due to insufficient intensity of the second reflected light 16, it is further preferable that the transmittance of the light separator 5 is 10% to 20% and the reflectance of the light separator 5 is 80% to 90%. More preferably, the light separator 5 has a transmittance of 10% and a reflectance of 90%.
In one embodiment, the light source 1 employs a laser, and in order to avoid the reaction of the photosensitive film 11 by the laser light emitted from the laser, the wavelength of the laser light emitted from the laser is preferably not less than 450nm, that is, the wavelength of the incident light 17 is not less than 450nm. Further preferably, the wavelength of the incident light 17 is 450nm to 700nm for economy.
In one embodiment, the first photodetector 6 employs a photodiode through which the optical signal intensity of the transmitted light 14 is measured in real time to learn the real-time optical signal intensities of the incident light 17 and the first reflected light 15. For example, when the light separator 5 has a transmittance of 10% and a reflectance of 90% and detects that the optical signal intensity of the transmitted light 14 is 10mw/cm 2, it is found by calculation that the optical signal intensity of the incident light 17 is 100mw/cm 2 and the optical signal intensity of the first reflected light 15 is 90mw/cm 2. In this embodiment, the first photodetector 6 employs a photodiode, which is advantageous in cost saving. In other embodiments, the first photodetector 6 may be a photomultiplier, and the present embodiment is not particularly limited.
The second photodetector 7 is used to measure the optical signal intensity of the second reflected light 16 in real time in order to determine the etching endpoint. In one embodiment, the second photodetector 7 may employ a photodiode, which is advantageous in terms of cost saving. Similarly, in other embodiments, the second photodetector 7 may also be a photomultiplier, which is not particularly limited in this embodiment, in order to improve the measurement accuracy.
In one embodiment, the etching end point detection device further comprises a beam former 2, the beam former 2 being located between the light source 1 and the light separator 5. The beamformer 2 is used to adjust the size of the incident light 17 to minimize the loss of light incident to the second photodetector, which is advantageous for improving the detection sensitivity of the etching end point detection device. Preferably, the beamformer 2 is used to amplify the laser light emitted by the laser in both the lateral and longitudinal directions to reduce light losses. For example, the beamformer 2 may enlarge the laser size of 2mm in diameter to a laser of 5mm×5mm in diameter. In one embodiment, the beamformer 2 consists of an aperture plate and two lenses, the aperture plate being located between the two lenses, the laser light passing through the lenses to the aperture plate, through a pinhole in the aperture plate to the other lens, and forming an amplified beam through the other lens. The present embodiment can effectively improve the detection sensitivity by providing the beam former 2, and on the other hand, the size of the incident light 17 is increased by the beam former 2, and the size of the first reflected light 15 is also increased, which increases the irradiation area of the first reflected light 15 on the substrate 9, thereby being beneficial to providing the detection efficiency and the detection accuracy. In addition, in the process of recycling the transparent substrate 13 of the mask substrate, all the material layers 10 on the transparent substrate 13 need to be etched to reform new material layers 10 on the transparent substrate 13, and the material layers 10 are arranged on the whole surface of the transparent substrate 13 of the mask substrate, so that the detection mode with larger irradiation area is more applicable.
In one embodiment, the etching end point detection device further comprises an optical homogenizer 3, the optical homogenizer 3 being located between the beamformer 2 and the optical separator 5. Specifically, the optical homogenizer 3 is configured to convert the optical signal intensity distribution of the incident light 17 emitted by the laser from a Gaussian beam (Gaussian) distribution to a flat-top beam (flattop) distribution, so as to make the energy distribution of the incident light 17 uniform, and further make the energy distribution of the transmitted light 14 and the first reflected light 15 incident on the material layer 10 uniform, so that the first light detector 6 and the second light detector 7 can measure the optical signal intensity conveniently, and even if there is a height difference between the material layers 10, accurate measurement can be performed, and the detection sensitivity and the detection accuracy can be further improved.
In one embodiment, the etching end point detection device further comprises an aperture lens 4, the aperture lens 4 being located between the light separator 5 and the laser. Specifically, the aperture lens 4 is located between the light separator 5 and the light homogenizer 3, and the aperture lens 4 can remove some noise-wave light in the area outside the flat-top beam shape, so that the light signal intensity distribution of the incident light 17 can be further ensured to be uniform, and further, the light signal intensity distribution of the first reflected light 15 and the second reflected light 16 is ensured to be more uniform, which is beneficial to further improving the detection sensitivity and the detection accuracy.
In one embodiment, the etching end point detection apparatus further includes: the focusing lens 8 has a first position between the first photodetector 6 and the optical separator 5, a second position between the second photodetector 7 and the substrate 9, and a third position between the substrate 9 and the optical separator 5, and the focusing lens 8 is positioned at least at one of the first position, the second position, and the third position. As shown in fig. 1, in the present embodiment, focusing lenses 8 are provided at the first position, the second position, and the third position, wherein the focusing lens 8 located at the first position is used to focus the transmitted light 14 on the first photodetector 6; a focusing lens 8 in the second position for focusing the second reflected light 16 on the second light detector 7; the light detector in the third position is capable of adjusting the size of the beam size of the first reflected light 15 incident on the substrate 9, which is used to produce parallel light to minimize the loss of the second reflected light 16 emitted from the substrate 9 to the second light detector 7.
In one embodiment, the controller calculates a current reflectance value of the material layer 10 based on the optical signal intensity of the second reflected light 16 and the optical signal intensity of the transmitted light 14, and compares the calculated current reflectance value of the material layer 10 with a pre-stored reflectance set point, and determines that an etch endpoint is reached when the current reflectance value of the material layer 10 reaches the reflectance set point.
Specifically, the change in the optical signal intensity of the second reflected light 16 may be caused by the change in the reflectance R of the material layer 10, the change in the optical signal intensity of the incident light 17, or the fluctuation in the optical signal intensity of the incident light 17 and the change in the reflectance of the material layer 10, and if it is simply determined whether the etching endpoint is reached or not by the change in the optical signal intensity of the transmitted light 14 and the change in the optical signal intensity of the second reflected light 16. Since the material layer 10 has the characteristics that the reflectivity varies according to the thickness, and the reflectances of different material layers 10 are different, the reflectivity may vary sharply when the material layer 10 varies, the above embodiments calculate the current reflectance value of the material layer 10 by the optical signal intensity variation of the transmitted light 14 and the optical signal intensity variation of the second reflected light 16, and further determine whether the etching endpoint is reached by determining whether the current reflectance value of the material layer 10 reaches the reflectance set value, and the etching endpoint detection accuracy is high.
Specifically, the reflectivity can be calculated by the intensity of the incident light and the intensity of the reflected light, and the ratio of the intensity of the reflected light to the intensity of the incident light is the reflectivity. Therefore, the reflectivity R of the material layer 10 is the ratio of the optical signal intensity of the second reflected light 16 to the optical signal intensity of the first reflected light 15. The transmitted light 14 and the first reflected light 15 come from the incident light 17 of the same light source 1, and the optical signal intensity of the first reflected light 15 can be calculated according to the optical signal intensity of the transmitted light 14 and the transmission-reflection ratio of the light separator 5, so that the current reflectivity value of the material layer 10 can be obtained through the optical signal intensity of the second reflected light 16, the optical signal intensity of the transmitted light 14 and the transmission-reflection ratio of the light separator 5.
In one embodiment, when the material layer 10 is the photosensitive film 11, the reflectance setting value is 10% to 20%. Further preferably, when the material layer 10 is the photosensitive film 11, the reflectance set value is 12% to 18%.
In one embodiment, when the material layer 10 is a metal film 12, the reflectance set value is 6% to 10%. Further preferably, when the material layer 10 is the metal film 12, the reflectance set value is: 8%.
In general, the reflectance of the photosensitive film 11 is generally 2% to 5%, the reflectance of the metal film 12 is 10% to 20%, and the reflectance of the light-transmitting substrate 13 is 6% to 10%. When the material layer 10 to be etched is the photosensitive film 11, since the reflectivity of the photosensitive film 11 is lower than that of the metal layer located thereunder, the reflectivity of the material layer 10 gradually becomes larger in the process that the photosensitive film 11 is gradually thinned by etching, and when the photosensitive film 11 is completely etched, the material layer 10 is the metal film 12, and therefore, when the material layer 10 is the photosensitive film 11, the reflectivity set value is the reflectivity of the metal film 12. Similarly, when the material layer 10 to be etched is the metal film 12, since the reflectivity of the metal film 12 is large and the light-transmitting substrate 13 transmits light, the reflectivity of the material layer 10 gradually becomes smaller in the process that the metal film 12 is gradually thinned by etching, when the photosensitive film 11 is completely etched, the first reflected light 15 transmits through the light-transmitting substrate 13, the second photodetector 7 cannot detect the optical signal of the second reflected light 16 or only the optical signal of the very weak second reflected light 16, and the reflectivity of the material layer 10 is reduced to the minimum, so when the material layer 10 is the metal film 12, the reflectivity set value is the reflectivity transmitted through the substrate 13.
Further, the fact that the current reflectivity value of the material layer 10 is equal to the reflectivity set value means that the current reflectivity value of the material layer 10 reaches the reflectivity set value.
In one embodiment, the controller calculates the slope of the reflectance change curve of the material layer 10 according to the optical signal intensity of the second reflected light 16, the optical signal intensity of the transmitted light 14, and the etching time, compares the calculated slope of the reflectance change curve of the material layer 10 with a pre-stored curve slope set point, and determines that the etching endpoint is reached when the slope of the reflectance change curve of the material layer 10 reaches the curve slope set point.
As described above, the material layer 10 has a characteristic that the reflectance varies according to the thickness, and the reflectance of different material layers 10 varies, and the reflectance varies sharply when the material layer 10 varies. When the reflectance of the material layer 10 changes sharply, the slope of the reflectance change curve of the material layer 10 changes sharply, regardless of whether the reflectance increases sharply or decreases sharply. In this embodiment, the slope of the reflectivity change curve of the current material layer 10 is calculated according to the optical signal intensity change of the transmitted light 14, the optical signal intensity change of the second reflected light 16 and the etching time, and further, whether the etching endpoint is reached is determined by determining whether the slope of the reflectivity change curve of the current material layer 10 reaches the curve slope set value, which can also achieve the technical effect of improving the accuracy of etching endpoint detection.
Specifically, during etching, the slope of the reflectance change curve of the material layer 10 is continuously changed, and the slope of the reflectance change curve of the material layer 10 is calculated by dividing the reflectance change amounts at different times by the time difference (i.e., the instant change amounts) at the different times. The slope of the reflectance change curve of the material layer 10 can be obtained by combining the time change after the real-time reflectance of the material layer 10 is obtained by the optical signal intensity of the second reflected light 16, the optical signal intensity of the transmitted light 14 and the transmittance-reflectance ratio of the optical separator 5.
Further, the material layer 10 is a photosensitive film 11 or a metal film 12. In the etching process, the change characteristic of the slope of the reflectance change curve is that the slope is changed from small to large and then from large to small, when the material layer 10 changes the reflectance rapidly, the slope of the reflectance change curve rapidly becomes large, and then the reflectance is kept to be the reflectance of the corresponding metal film 12 or the reflectance of the transparent substrate 13, and the reflectance value is kept unchanged, and at this time, the slope of the reflectance change curve rapidly becomes small again. In order to ensure accuracy of etching end point determination, preferably, in this embodiment, a slope of the reflectance change curve corresponding to a turning point with a larger and smaller slope is selected as a curve slope set value. Further preferably, the maximum value of the slope of the reflectance change curve is selected as the curve slope set point. Further, the calculated slope of the current reflectance change curve of the material layer 10 is equal to the curve slope set value, that is, the slope of the reflectance change curve of the material layer 10 reaches the curve slope set value.
In the above embodiment, whether the etching end point is reached is determined according to the change of the reflectivity of the material layer 10 or the change of the slope of the reflectivity change curve of the material layer 10, so as to improve the accuracy of etching end point detection. In other embodiments, it may also be determined whether the etching endpoint is reached by both the change in reflectivity of the material layer 10 and the change in slope of the curve of the change in reflectivity of the material layer 10, and when both meet the preset threshold, it is determined that the etching endpoint is reached, so that the accuracy of endpoint etching detection may be further improved. Further, in practical application, a specific etching endpoint determination rule may be set according to actual needs, and the above embodiment is not limited specifically.
Referring to fig. 2, the present invention further provides an etching endpoint detection method, which includes the following steps:
Step S11: at the start of etching, an incident light 17 having a preset intensity value is provided, the incident light 17 being configured to be split into a transmitted light 14 and a first reflected light 15 in a preset ratio, the first reflected light 15 illuminating the substrate 9 and being reflected by the material layer 10 on the substrate 9 to form a second reflected light 16.
Specifically, at the beginning of etching, a laser is started, the laser emits incident light 17 with a preset intensity value, the incident light 17 is amplified by a beam former 2 and then converted into a flat-top beam by a light homogenizer 3, then light in a noise wave form is removed by an aperture lens 4 and enters a light separator 5, the light separator 5 separates the incident light 17 into transmitted light 14 and first reflected light 15 according to a preset proportion, the transmitted light 14 passes through the light separator 5, the first reflected light 15 irradiates a substrate 9, and the first reflected light 15 is reflected by a material layer 10 on the substrate 9 to form second reflected light 16.
Step S12: the optical signal of the transmitted light 14 and the optical signal of the second reflected light 16 are detected.
Specifically, during etching, the optical signal of the transmitted light 14 and the optical signal of the second reflected light 16 are detected in real time by the first photodetector 6 and the second photodetector 7, respectively. The first photodetector 6 and the second photodetector 7 transmit the detected optical signal of the transmitted light 14 and the detected optical signal of the second reflected light 16, respectively, to the controller.
Step S13: the etching end point is determined based on the optical signal intensity variation of the transmitted light 14 and the optical signal intensity variation of the second reflected light 16, and the etching end point is determined to be reached when the optical signal intensity variation of the transmitted light 14 and the optical signal intensity variation of the second reflected light 16 reach the set target values.
In one embodiment, the set target value is a reflectivity set point, and the controller calculates a current reflectivity value of the material layer 10 based on the optical signal intensity variation of the transmitted light 14 and the optical signal intensity variation of the second reflected light 16 to determine the etching end point. Specifically, step S13 includes: and calculating the current reflectivity value of the material layer 10 according to the light signal intensity of the second reflected light 16 and the light signal intensity of the transmitted light 14 which are received currently, comparing the calculated current reflectivity value of the material layer 10 with a pre-stored reflectivity set value, and determining that the etching end point is reached when the current reflectivity value of the material layer 10 reaches the reflectivity set value. The method for calculating the current reflectance value of the material layer 10 according to the optical signal intensity of the second reflected light 16 and the optical signal intensity of the transmitted light 14 by the specific controller is described in the above embodiments, and will not be described herein. When the calculated current reflectivity value of the material layer 10 reaches the reflectivity set value, the material layer 10 is etched, the etching end point is reached, and the controller informs the etching equipment to stop etching. When the calculated current reflectance value of the material layer 10 does not reach the reflectance set value, steps S12 to S13 are cyclically executed until the etching end point is reached.
Further, the controller stores the reflectance setting value of the material layer 10 in advance, and when the material layer 10 is the photosensitive film 11, the reflectance setting value is 10% -20%, preferably 12% -18%, and the current reflectance value of the material layer 10 is equal to the reflectance setting value, that is, the current reflectance value of the material layer 10 reaches the reflectance setting value. When the material layer 10 is the metal film 12, the reflectivity set value is 6% -10%, preferably 8%, and the current reflectivity value of the material layer 10 is equal to the reflectivity set value, that is, the current reflectivity value of the material layer 10 reaches the reflectivity set value.
In another embodiment, the set target value is a slope set point of the curve, and the controller calculates the slope of the reflectance change curve of the material layer 10 according to the optical signal intensity change of the transmitted light 14 and the optical signal intensity change of the second reflected light 16 to determine the etching end point. Specifically, step S13 includes: calculating the slope of the reflectivity change curve of the material layer 10 according to the currently received optical signal intensity of the second reflected light 16, the optical signal intensity of the transmitted light 14 and the etching time, comparing the calculated slope of the reflectivity change curve of the material layer 10 with a pre-stored curve slope set value, and determining that the etching endpoint is reached when the slope of the reflectivity change curve of the material layer 10 reaches the curve slope set value. The method for calculating the slope of the reflectance change curve of the material layer 10 according to the optical signal intensity of the second reflected light 16, the optical signal intensity of the transmitted light 14 and the etching time by the specific controller is described in the above embodiments, and is not repeated here. When the calculated slope of the current reflectance change curve of the material layer 10 reaches the curve slope set value, the material layer 10 is etched, the etching end point is reached, and the controller informs the etching equipment to stop etching. When the calculated slope of the reflectivity change curve of the current material layer 10 does not reach the preset curve slope setting value, step S12 to step S13 are circularly executed until the etching end point is reached.
Further, the controller stores a set value of a curve slope of the material layer 10 in advance, wherein the material layer 10 is the photosensitive film 11 or the metal film 12, and the set value of the curve slope is a slope of a reflectivity change curve corresponding to a turning point at which the slope of the reflectivity change curve is changed from large to small. Further preferably, the curve slope setting value is a maximum value of the slope of the reflectance change curve. The calculated slope of the current reflectivity change curve of the material layer 10 is equal to the curve slope set value, that is, the slope of the reflectivity change curve of the material layer 10 reaches the curve slope set value.
The etching end point detection method has the beneficial effects that the erroneous judgment of the etching end point can be effectively avoided, and the accuracy of etching end point detection is high by using the etching end point detection device to detect the etching end point.
In one embodiment, the etching end point detection method further comprises the steps of:
step S10: before etching starts, the material layer 10 information, the reflectivity setting value and/or the curve slope setting value are obtained.
Specifically, the reflective capabilities of the different materials and the different thickness material layers 10 are different, and thus, the preset reflectance setting value and curve slope setting value are different for the different material layers 10. Before etching starts, the material layer 10 information and the reflectivity set value and/or curve slope set value corresponding to the material layer 10 information are obtained and stored, so that whether the etching end point is reached or not is judged according to the reflectivity set value and/or curve slope set value. Further, the material layer 10 information and the reflectivity set value and/or the curve slope set value corresponding to the material layer 10 information may be obtained by searching the material layer 10 information and the reflectivity set value and/or the curve slope set value corresponding to the material layer 10 information stored in advance, or may be obtained by external command entry, which is not limited in this embodiment.
In one embodiment, after the step of determining that the etching end point is reached in step S13, the steps of:
Step S14: the material layer 10 information, the reflectivity setpoint and/or the profile slope setpoint, and the etch endpoint time are stored.
Specifically, in this embodiment, the etching end point time is the difference between the time when the etching end point is reached and the time when the etching starts, and the immediate etching end point time is the time required for completing one etching. In this embodiment, after the etching endpoint is determined to be reached, the information of the material layer 10, the set value of the reflectivity and/or the set value of the slope of the curve and the etching endpoint time are stored, and when the etching process is performed on the substrate 9 with the same information of the material layer 10 next time, the etching process can be directly performed according to the stored etching endpoint time, so that the etching process can be conveniently performed on the batch of substrates 9, and the etching process efficiency of the batch of substrates 9 is improved.
Further, the technical scheme provided by the invention is further described in detail below with reference to specific embodiments. The advantages and features of the present invention will become more apparent from the following description.
For convenience of explanation, the following embodiments will specifically explain the above-described etching end point detection method by taking the example that the optical signal intensity of the incident light 17 is 100mw/cm 2, the transmittance of the optical separator 5 is 10%, the reflectance is 90%, and whether the etching end point is reached or not is judged according to the reflectance change.
Example 1:
in this embodiment, the material layer 10 is the photosensitive film 11, the reflectivity set value is 15%, and the current reflectivity value of the material layer 10 is equal to 15%, which is that the current reflectivity value of the material layer 10 reaches the reflectivity set value.
An etching end point detection method comprises the following steps:
First, at the start of etching, the etching start time is recorded and the laser is started, the laser emits incident light 17 with an intensity of 100mw/cm 2, the incident light 17 is separated into transmitted light 14 with an intensity of 10mw/cm 2 and first reflected light 15 with an intensity of 90mw/cm 2 by the light separator 5, the first reflected light 15 is irradiated to the substrate 9, and the first reflected light 15 is reflected by the material layer 10 on the substrate 9 to form second reflected light 16.
Thereafter, the first photodetector 6 and the second photodetector 7 detect the optical signal of the transmitted light 14 and the optical signal of the second reflected light 16, respectively, in real time during etching, and transmit the detected optical signals of the transmitted light 14 and the second reflected light 16 to the controller.
At a certain moment, the optical signal intensity of the second reflected light 16 received by the controller is 13.5mw/cm 2, the optical signal intensity of the second reflected light 16 received last time is 11.25mw/cm 2, and the optical signal intensity of the second reflected light 16 becomes large. At this time, the intensity of the transmitted light 14 detected by the first photodetector is 12mw/cm 2, the intensity of the transmitted light 14 detected last time is 10mw/cm 2, the intensity of the transmitted light 14 also becomes large, the current reflectance value of the current material layer 10 is 12.5% by calculation, the reflectance value of the material layer 10 obtained by the last calculation is 12.5%, the reflectance of the material layer 10 is not changed, the increase in the optical signal intensity of the current second reflected light 16 is caused by the increase in the intensity of the incident light 17, and etching is continued. At another moment, the light signal intensity of the second reflected light 16 received by the controller is 13.5mw/cm 2, the light signal intensity of the second reflected light 16 received last time is 13mw/cm 2, the light signal intensity of the second reflected light 16 becomes large, at this time, the intensity of the transmitted light 14 detected by the first light detector is 10mw/cm 2, the intensity of the transmitted light 14 detected last time is 10mw/cm 2, the light signal intensity of the transmitted light 14 is unchanged, the current reflectivity value of the material layer 10 is further calculated to be 15%, the current reflectivity value of the material layer 10 reaches the reflectivity set value, it is determined that the etching end point is reached, and the controller notifies the etching equipment to stop running.
Example 2:
In this embodiment, the material layer 10 is a metal film 12, the reflectivity set value is 8%, and the current reflectivity value of the material layer 10 is equal to 8%, which is that the current reflectivity value of the material layer 10 reaches the reflectivity set value.
An etching end point detection method comprises the following steps:
First, at the start of etching, the etching start time is recorded and the laser is started, the laser emits incident light 17 with an intensity of 100mw/cm 2, the incident light 17 is separated into transmitted light 14 with an intensity of 10mw/cm 2 and first reflected light 15 with an intensity of 90mw/cm 2 by the light separator 5, the first reflected light 15 is irradiated to the substrate 9, and the first reflected light 15 is reflected by the material layer 10 on the substrate 9 to form second reflected light 16.
Thereafter, the first photodetector 6 and the second photodetector 7 detect the optical signal of the transmitted light 14 and the optical signal of the second reflected light 16, respectively, in real time during etching, and transmit the detected optical signals of the transmitted light 14 and the second reflected light 16 to the controller.
At some point, the optical signal intensity of the second reflected light 16 received by the controller is 7.2mw/cm 2, the optical signal intensity of the second reflected light 16 received last time is 9mw/cm 2, and the optical signal intensity of the second reflected light 16 becomes small. At this time, the intensity of the transmitted light 14 detected by the first photodetector is 8mw/cm 2, the intensity of the transmitted light 14 detected last time is 10mw/cm 2, the intensity of the transmitted light 14 is also reduced, the current reflectance value of the current material layer 10 is 10% by calculation, the reflectance of the material layer 10 obtained by the last calculation is also 10%, the decrease in the optical signal intensity of the current second reflected light 16 is caused by the decrease in the intensity of the incident light 17, and etching is continued. At another moment, the light signal intensity of the second reflected light 16 received by the controller is 7.2mw/cm 2, the light signal intensity of the second reflected light 16 received last time is 8mw/cm 2, the light signal intensity of the second reflected light 16 becomes smaller, at this moment, the intensity of the transmitted light 14 detected by the first light detector is 10mw/cm 2, the intensity of the transmitted light 14 detected last time is 10mw/cm 2, the light signal intensity of the transmitted light 14 is unchanged, the current reflectivity value of the material layer 10 is further calculated to be 8%, the current reflectivity value of the material layer 10 reaches the reflectivity set value, it is determined that the etching end point is reached, and the controller informs the etching equipment to stop running.
Further, in other embodiments, the above-described etching end point detection method may also be applied to a process of performing etching treatment on the photosensitive film 11 and performing etching treatment on the metal film 12 to detect the etching end point of the photosensitive film 11 and the etching end point of the metal film 12, respectively. Specifically, during the etching process, the etching end point of the photosensitive film 11 is detected according to the detection process of embodiment 1, the etching equipment is controlled to stop running after reaching the etching end point, the etching equipment is started again after the etching solution is replaced, and the etching end point of the metal film 12 is detected according to the detection process of embodiment 2, and the specific etching end point detection process is described in the above embodiments 1 and 2, respectively, and is not repeated here.
Further, the foregoing embodiments 1 and 2 are both described by taking the case of judging whether the etching endpoint is reached according to the reflectivity change of the material layer as an example, and in other embodiments, when judging whether the etching endpoint is reached according to the slope change of the reflectivity change curve of the material layer, the calculation manner is different from that of embodiments 1 and 2, and the judgment process is similar and will not be repeated.
The foregoing description is only illustrative of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention in any way, and any alterations and modifications made by those skilled in the art in light of the above disclosure shall fall within the scope of the present invention.
Claims (10)
1. An etching end point detection device, characterized by comprising:
A light source for providing incident light;
The light separator is used for separating incident light provided by the light source into transmitted light and first reflected light, the transmitted light is transmitted through the light separator, the first reflected light irradiates the substrate, the substrate is provided with a material layer to be etched, the material layer has a reflection effect on light, and the first reflected light is reflected by the material layer to obtain second reflected light;
a first photodetector that receives an optical signal of the transmitted light separated by the optical separator;
A second photodetector that receives an optical signal of the second reflected light;
And the controller is respectively connected with the first light detector and the second light detector, and determines an etching end point according to the received light signal intensity change of the transmitted light and the received light signal intensity change of the second reflected light.
2. The etching end point detection apparatus according to claim 1, further comprising: a beamformer located between the light source and the optical splitter.
3. The etching end point detection apparatus according to claim 2, further comprising: an optical homogenizer located between the beamformer and the optical separator.
4. The etching end point detecting apparatus according to claim 1, wherein,
The etching end point detection device further comprises: an aperture lens located between the light separator and the laser;
And/or the number of the groups of groups,
The etching end point detection device further comprises: and a focusing lens, wherein a first position is arranged between the first light detector and the light separator, a second position is arranged between the second light detector and the substrate, a third position is arranged between the substrate and the light separator, and the focusing lens is at least positioned at one of the first position, the second position and the third position.
5. The etching end point detecting apparatus according to claim 1, wherein,
The wavelength of the incident light is not less than 450nm;
And/or the number of the groups of groups,
The transmittance of the light separator is 10% -50%, and the reflectivity of the light separator is 50% -90%.
6. The etching end point detecting apparatus according to claim 1, wherein,
The controller calculates the current reflectivity value of the material layer according to the optical signal intensity of the second reflected light and the optical signal intensity of the transmitted light, compares the calculated current reflectivity value of the material layer with a pre-stored reflectivity set value, and determines that an etching endpoint is reached when the current reflectivity value of the material layer reaches the reflectivity set value;
And/or the number of the groups of groups,
The controller calculates the slope of the reflectivity change curve of the material layer according to the optical signal intensity of the second reflected light, the optical signal intensity of the transmitted light and the etching time, compares the calculated slope of the reflectivity change curve of the material layer with a pre-stored curve slope set value, and determines that the etching endpoint is reached when the slope of the reflectivity change curve of the material layer reaches the curve slope set value.
7. The apparatus according to claim 6, wherein,
The material layer is a photosensitive film, and the reflectivity set value is as follows: 10% -20%;
or alternatively, the first and second heat exchangers may be,
The material layer is a metal film, and the reflectivity set value is as follows: 6 to 10 percent.
8. An etching end point detection method is characterized by comprising the following steps:
Providing incident light with a preset intensity value when etching is started, wherein the incident light is configured to be separated into transmitted light and first reflected light according to a preset proportion, and the first reflected light irradiates a substrate and forms second reflected light after being reflected by a material layer on the substrate;
detecting an optical signal of the transmitted light and an optical signal of the second reflected light;
And determining an etching end point according to the optical signal intensity change of the transmitted light and the optical signal intensity change of the second reflected light, and determining that the etching end point is reached when the optical signal intensity change of the transmitted light and the optical signal intensity change of the second reflected light reach a set target value.
9. The method for detecting an etching end point according to claim 8, wherein,
The step of determining an etching end point according to the optical signal intensity variation of the transmitted light and the optical signal intensity variation of the second reflected light, and when the optical signal intensity variation of the transmitted light and the optical signal intensity variation of the second reflected light reach a set target value, determining that the etching end point is reached includes:
calculating a current reflectance value of the material layer according to the optical signal intensity of the second reflected light and the optical signal intensity of the transmitted light;
Comparing the calculated current reflectivity value of the material layer with a pre-stored reflectivity set value;
When the current reflectivity value of the material layer reaches the reflectivity set value, determining that the etching end point is reached;
And/or the number of the groups of groups,
The step of determining an etching end point according to the optical signal intensity variation of the transmitted light and the optical signal intensity variation of the second reflected light, and when the optical signal intensity variation of the transmitted light and the optical signal intensity variation of the second reflected light reach a set target value, determining that the etching end point is reached includes:
Calculating the slope of the reflectivity change curve of the material layer according to the optical signal intensity of the second reflected light, the optical signal intensity of the transmitted light and the etching time;
comparing the calculated slope of the reflectivity change curve of the material layer with a pre-stored curve slope set value;
and determining that the etching end point is reached when the slope of the reflectivity change curve of the material layer reaches the curve slope set value.
10. The method for detecting an etching end point according to claim 9, wherein,
The material layer is a photosensitive film, and the reflectivity set value is as follows: 10% -20%;
or alternatively, the first and second heat exchangers may be,
The material layer is a metal film, and the reflectivity set value is as follows: 6 to 10 percent.
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