CN118011170A - Power cycle test system and method for 6000A crimping semiconductor device - Google Patents
Power cycle test system and method for 6000A crimping semiconductor device Download PDFInfo
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- CN118011170A CN118011170A CN202410155519.0A CN202410155519A CN118011170A CN 118011170 A CN118011170 A CN 118011170A CN 202410155519 A CN202410155519 A CN 202410155519A CN 118011170 A CN118011170 A CN 118011170A
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- 238000012360 testing method Methods 0.000 title claims abstract description 145
- 239000004065 semiconductor Substances 0.000 title claims abstract description 129
- 238000002788 crimping Methods 0.000 title claims abstract description 81
- 238000000034 method Methods 0.000 title abstract description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052802 copper Inorganic materials 0.000 claims abstract description 47
- 239000010949 copper Substances 0.000 claims abstract description 47
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 56
- 238000001816 cooling Methods 0.000 claims description 38
- 125000004122 cyclic group Chemical group 0.000 claims description 6
- 238000010998 test method Methods 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims description 2
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract description 7
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000008400 supply water Substances 0.000 description 1
- 238000005493 welding type Methods 0.000 description 1
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Abstract
The invention discloses a power cycle test system and method of a 6000A crimping semiconductor device, and belongs to the technical field of reliability test of power semiconductor devices. The power cycle test system includes: the power cycle test device, the semiconductor switch group, the mold temperature machine and at least one power cycle clamp; the power cycle test apparatus includes: 6000A DC power supply and switch board. The invention sets 6000A DC power supply to meet the high-power test requirement, and sets the semiconductor switch group and the copper bar connection mode to realize the electric energy transmission requirement under the high-power condition.
Description
Technical Field
The invention relates to the technical field of reliability test of power semiconductor devices, in particular to a power cycle test system and method of a 6000A crimping semiconductor device .
Background
The flexible direct current transmission is a new generation direct current transmission technology adopting a full-control type power electronic device capable of being automatically turned off, and is widely developed and applied worldwide. The independent power regulation and flexible operation capability of the system provide a safe and efficient solution for intermittent renewable energy grid connection and consumption. Among them, flexible dc converter valves and high voltage dc breakers become vital power electronics. The flexible dc converter valve mainly employs a voltage source converter technology of a modular multilevel technology (ModularMultilevel Converter, MMC), i.e. by using power semiconductor devices such as Insulated Gate Bipolar Transistors (IGBTs), to achieve reliable power conversion and control. The high-voltage direct current circuit breaker also depends on the IGBT as a key switching device thereof, and can rapidly limit and cut off fault current in a flexible direct current system, and rapidly cut off and isolate faults. Therefore, the research on the IGBT is of great significance to the development of the flexible direct current transmission technology.
The high-voltage high-power IGBT device has two packaging forms of welding type and crimping type, wherein the crimping type IGBT device has the advantages of high withstand voltage, high passing current, low control power, high switching speed, double-sided heat dissipation and the like, and is very suitable for being applied to a high-power scene. And moreover, the crimping IGBT has the characteristic of failure short circuit, and is particularly suitable for redundant design, so that the crimping IGBT is more suitable for being applied to a converter valve and a direct current breaker. There is a high reliability requirement for IGBT devices applied in flexible dc power transmission systems. However, under field stress conditions, it may take 10 to 30 years to directly test the reliability of the power semiconductor device, and thus this approach is clearly not feasible. In order to check the reliability of the power semiconductor, a series of reliability tests which are approximately equivalent to the actual working state are generally required to accelerate the aging of the device and expose some possible failure problems in advance so as to optimize the design of the device and improve the reliability.
The power cycle test heats the device to reach a preset temperature by giving a certain load current to the device to be tested and by the power loss generated by the device itself. And then the temperature of the device is reduced to a fixed temperature by a cooling means, so that the function of simulating the actual switching working state of the high-power device is realized. The current commercial power cycle test system cannot meet the requirements of high-power (high-current) crimping IGBT device reliability test.
Disclosure of Invention
The invention aims to provide a power cycle test system and method of a 6000A crimping semiconductor device, so as to meet the requirements of high-power (high-current) crimping IGBT device reliability test.
In order to achieve the above object, the present invention provides the following solutions:
A power cycle test system for a 6000A crimped semiconductor device, the power cycle test system comprising: the power cycle test device, the semiconductor switch group, the mold temperature machine and at least one power cycle clamp; the power cycle test apparatus includes: 6000A direct current power supply and a control cabinet;
The positive electrode of the 6000A direct-current power supply is connected with one end of the semiconductor switch group through a copper bar, and the other end of the semiconductor switch group is connected with the positive electrode input end of the power circulation clamp; the negative electrode of the 6000A direct current power supply is connected with the negative electrode input end of the power circulation clamp;
The die temperature machine is connected with a water cooling system of the power circulation clamp;
The power cycle clamp is used for clamping, crimping and testing the crimping semiconductor device to be tested when the power cycle test is carried out;
and the control cabinet is respectively connected with the control end of the semiconductor switch group and the test signal output end of the power circulation clamp.
Optionally, the power cycle fixture comprises a clamping assembly, a water cooling system and a testing assembly;
the clamping assembly is used for clamping and crimping the crimping semiconductor device to be tested;
The water cooling system is used for cooling the crimping semiconductor device to be tested;
The testing component is used for testing the crimping type semiconductor device to be tested.
Optionally, the clamping assembly includes: the device comprises a circulating clamp shell, a top pressing plate, a first circulating clamp copper bar, a second circulating clamp copper bar and a disc spring;
The top pressure plate, the first circulating clamp copper bar, the second circulating clamp copper bar and the disc spring are sequentially arranged in the circulating clamp shell from top to bottom;
The first circulating clamp copper bar is connected with the other end of the semiconductor switch group; the second circulating clamp copper bar is connected with the negative electrode of the 6000A direct-current power supply;
The plurality of crimping semiconductor devices to be tested are connected in series to form a series structure;
One end of the series structure is connected with the first circulating clamp copper bar, and the other end of the series structure is connected with the second circulating clamp copper bar.
Optionally, the water cooling system comprises a water separator and a plurality of water cooling radiators;
The water-cooling radiators are sequentially arranged between the first circulating clamp copper bar and the second circulating clamp copper bar from top to bottom;
the first input ends of the water separators are connected with the mold temperature machine, and the first output ends of the water separators are respectively connected with the input ends of the water-cooling radiators in a one-to-one correspondence manner;
The crimping semiconductor device to be tested is arranged between two adjacent water-cooling radiators;
The second input ends of the water separator are respectively connected with the output ends of the water-cooling radiators in a one-to-one correspondence mode, and the second output ends of the water separator are connected with the die temperature machine.
Optionally, the test assembly includes a current sensor, a plurality of voltage sensors, and a plurality of thermocouples;
The current sensor is connected in series with the series structure;
the voltage sensors are respectively connected with the crimping semiconductor devices to be tested in parallel in a one-to-one correspondence manner;
and the thermocouples are arranged in one-to-one correspondence with the crimping semiconductor devices to be tested.
Alternatively, the 6000A dc power supply includes a plurality of constant current sources connected in parallel, and the semiconductor switch group includes a plurality of semiconductor switches connected in parallel.
Optionally, the mold temperature machine comprises an internal circulation system, a water tank and an external circulation system;
The inner circulation system is communicated with the water tank and the water cooling system, and the outer circulation system is communicated with the water tank and the outside air;
the internal circulation system is used for converting heat on the surface of the crimping semiconductor device to be tested in the water cooling system to the water tank, and the external circulation system is used for transferring heat in the water tank to outside air.
Optionally, the control cabinet comprises a data acquisition module, a switch signal generating device and a mobile terminal;
the data acquisition module is respectively connected with the test assembly and the mobile terminal, and is used for acquiring voltage, current and temperature in a power cycle test and transmitting the voltage, current and power to the mobile terminal;
the switch signal generating device is connected with the control end of the semiconductor switch group.
Optionally, the bottom of the power cycle test device is also provided with a Fu Ma Lun.
The power cycle test method of the 6000A crimping type semiconductor device is applied to the power cycle test system, and comprises the following steps of:
carrying out a circulating power test under a preset current test condition on a crimping semiconductor device to be tested by adopting a calibration clamp to obtain a test result under the preset current test condition; the preset current is at least less than 6000A;
Determining a relation model of voltage, current and junction temperature based on a test result under a preset current test condition;
Performing a cyclic power test under 6000A test conditions on the crimping semiconductor device to be tested by adopting a power cyclic test system to obtain a test result under the 6000A test conditions;
And determining the junction temperature of the crimping semiconductor device to be tested under the 6000A test condition according to the relation model and the test result under the 6000A test condition.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
The embodiment of the invention provides a power cycle test system and a power cycle test method of a 6000A crimping semiconductor device, wherein the power cycle test system comprises the following components: the power cycle test device, the semiconductor switch group, the mold temperature machine and at least one power cycle clamp; the power cycle test apparatus includes: 6000A direct current power supply and a control cabinet; the positive electrode of the 6000A direct-current power supply is connected with one end of the semiconductor switch group through a copper bar, and the other end of the semiconductor switch group is connected with the positive electrode input end of the power circulation clamp; the negative electrode of the 6000A direct current power supply is connected with the negative electrode input end of the power circulation clamp; the die temperature machine is connected with a water cooling system of the power circulation clamp; the power cycle clamp is used for clamping, crimping and testing the crimping semiconductor device to be tested when the power cycle test is carried out; and the control cabinet is respectively connected with the control end of the semiconductor switch group and the test signal output end of the power circulation clamp. The embodiment of the invention sets 6000A direct current power supply to meet the high-power test requirement, and sets the semiconductor switch group and copper bar connection mode to realize the electric energy transmission requirement under the high-power condition.
According to the embodiment of the invention, the power cycle test device and the power cycle clamp are arranged separately, and are connected through the copper bars, so that the power cycle clamp is convenient to assemble and disassemble during the test, and the flexibility of the test is improved.
According to the embodiment of the invention, the number of the power circulation clamps is set, so that a plurality of crimping semiconductor devices can be tested simultaneously, and the efficiency of power circulation test is greatly improved.
Drawings
FIG. 1 is a top view of a power cycle test system provided by an embodiment of the present invention;
FIG. 2 is a side view of a power cycle test system provided by an embodiment of the present invention;
FIG. 3 is a rear view of a power cycle test system provided by an embodiment of the present invention;
FIG. 4 is a front view of a power cycle clamp according to an embodiment of the present invention;
fig. 5 is a rear view of a power cycle clamp provided by an embodiment of the present invention.
Reference numerals illustrate:
1. A control cabinet; 2. a copper bar; 3. a power cycling clamp; 4. a mold temperature machine; 5. an epoxy screw; 6. a semiconductor switch group; 7. 6000A DC power supply; 8. a top platen; 9. a first circulating clamp copper bar; 10. a water separator; 11. a water-cooled radiator; 12. a crimped semiconductor device under test; 13. a disc spring; 14. and a second circulation clamp copper bar.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
The invention aims to provide a power cycle test system and method of a 6000A crimping semiconductor device, so as to meet the requirements of high-power (high-current) crimping IGBT device reliability test.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
Example 1
The embodiment 1 of the invention provides a power cycle test system of a 6000A crimping semiconductor device, as shown in fig. 1-3, comprising: the power cycle test device, the semiconductor switch group 6, the die temperature machine 4 and at least one power cycle clamp 3; the power cycle test apparatus includes: 6000A direct current power supply 7 and a control cabinet 1; the positive electrode of the 6000A direct current power supply 7 is connected with one end of the semiconductor switch group 6 through the copper bar 2, and the other end of the semiconductor switch group 6 is connected with the positive electrode input end of the power circulation clamp 3; the negative electrode of the 6000A direct current power supply 7 is connected with the negative electrode input end of the power circulation clamp 3; the mold temperature machine 4 is connected with a water cooling system of the power circulation clamp 3; the power cycle clamp 3 is used for clamping, crimping and testing the crimping semiconductor device 12 to be tested when performing a power cycle test; the control cabinet 1 is respectively connected with the control end of the semiconductor switch group 6 and the test signal output end of the power circulation clamp 3.
When a test is carried out, the semiconductor switch group 6 and the power circulation clamp 3 are electrically connected with the control cabinet 1; when a power cycle test is carried out, the embodiment of the invention can be provided with a plurality of power cycle clamps 3, and each power cycle clamp 3 is connected to a 6000A direct current power supply through a copper bar; considering that the copper bar generates serious heat under 6000A current, the area of the copper bar 2 is increased in the embodiment of the invention so as to strengthen the heat dissipation capability.
In the embodiment of the invention, the semiconductor switch group 6 is respectively connected with the positive electrode of the 6000A direct current power supply 7 through copper bars; the semiconductor switch group 6 includes a plurality of semiconductor switches connected in parallel to achieve large current transmission, and by way of example, the semiconductor switch group 6 selected by the present invention is composed of 2 IGBT devices of 3600A connected in parallel, because the switch itself is a power module when performing power circulation on the IGBT devices, the switch is actually performing power circulation, in order to avoid damage to the semiconductor switch group 6, the current flowing through each semiconductor switch is reduced in parallel shunt mode, and an IGBT with a current level much greater than the maximum shunt current of each semiconductor switch is used as the switch, and the IGBT module of 3600A is used as the switch in the present system.
According to the embodiment of the invention, the crimping semiconductor device to be tested on a certain branch (namely, the crimping semiconductor device to be tested arranged in a certain power circulation clamp) is tested by controlling the on-off state of the semiconductor switch group 6, so that the crimping semiconductor device to be tested on the certain branch can be heated, and other branches are in a cooling state.
The embodiment of the invention is characterized in that a measurement control area and a switch control area are arranged in a control cabinet 1; the measurement control area is internally provided with: a data acquisition module and a mobile terminal; the data acquisition module is electrically connected with the power circulation clamp 3 and is used for acquiring physical quantities such as voltage, current, temperature and the like in a power circulation test; the mobile terminal is used for displaying and storing the voltage, current and temperature information and providing man-machine interaction; a switch signal generating device is arranged in the switch control area and is used for controlling the semiconductor switch group 6.
Specifically, the control cabinet 1 comprises a data acquisition module, a switch signal generating device and a mobile terminal; the data acquisition module is respectively connected with the test assembly of the power cycle clamp 3 and the mobile terminal, and is used for acquiring voltage, current and temperature in a power cycle test and transmitting the voltage, current and power to the mobile terminal; the switching signal generating device is connected with the control end of the semiconductor switch group 6.
The power circulation clamp 3 in the embodiment of the invention comprises a clamping assembly, a water cooling system and a testing assembly; the clamping assembly is used for clamping and crimping the crimping semiconductor device to be tested; the water cooling system is used for cooling the crimping semiconductor device to be tested; the testing component is used for testing the crimping type semiconductor device to be tested.
As shown in fig. 4 to 5, the clamping assembly includes: the circular fixture comprises a circular fixture shell, a top pressure plate 8, a first circular fixture copper bar 9, a second circular fixture copper bar 14 and a disc spring 13; the top pressure plate 8, the first circulating clamp copper bar 9, the second circulating clamp copper bar 14 and the disc spring 13 are sequentially arranged in the circulating clamp shell from top to bottom; the first circulating clamp copper bar 9 is connected with the other end of the semiconductor switch group 6; the second circulating clamp copper bar 14 is connected with the negative electrode of the 6000A direct-current power supply 7; the plurality of crimping semiconductor devices 12 to be tested are connected in series with each other to form a series structure; one end of the series structure is connected with the first circulating clamp copper bar 9, and the other end of the series structure is connected with the second circulating clamp copper bar 14.
The number of the crimped semiconductor devices 12 to be tested forming the series structure in the embodiment of the present invention may be 4.
In the embodiment of the invention, a top pressure plate 8 is arranged in a power circulation clamp 3 and is used for uniformly transmitting pressure to a crimping type semiconductor device to be tested 12; a first circulation clamp copper bar 9 and a second circulation clamp copper bar 14 are arranged and are respectively connected with the semiconductor switch group 6 and the cathode of the 6000A direct current power supply 7; a disc spring 13 is provided for absorbing displacement to generate pressure required for crimping the semiconductor device.
As shown in fig. 4 to 5, the water cooling system includes a water separator 10 and a plurality of water-cooled radiators 11; the plurality of water-cooled radiators 11 are sequentially arranged between the first circulating clamp copper bar 9 and the second circulating clamp copper bar 14 in the sequence from top to bottom; the first input end of the water separator 10 is connected with the mold temperature machine 4, and the first output ends of the water separator 14 are respectively connected with the input ends of the water-cooling radiators 11 in a one-to-one correspondence manner; the crimping type semiconductor device to be tested 12 is arranged between two adjacent water-cooling radiators 11; the second input ends of the water separator 10 are respectively connected with the output ends of the water-cooling radiators 11 in a one-to-one correspondence manner, and the second output end of the water separator 10 is connected with the mold temperature machine 4.
In the embodiment of the invention, a water-cooling radiator 11 is arranged in a power circulation clamp 3 and is in direct contact with a crimping semiconductor device to be tested 12, and the crimping semiconductor device to be tested 12 is used for being matched with a mold temperature machine 4 to take away heat on the surface of the crimping semiconductor device to be tested 12, and mainly consists of an epoxy resin screw 5; a water separator 10 is arranged to supply water in the water tank of the mold temperature machine 4 to each water-cooling radiator 11 for taking away heat on the surface of the crimping semiconductor device to be tested 12.
In the embodiment of the invention, the 6000A direct current power supply 7 stably outputs 0-6000A direct current power supply for providing electric energy.
The 6000A dc power supply 7 includes a plurality of parallel connected constant current sources, in this embodiment, the constant current sources are 500mA constant current sources, and are respectively connected in parallel to two ends of each of the crimping semiconductor devices to be tested 12, so as to supply current to each of the crimping semiconductor devices to be tested, and the junction temperature of each of the crimping semiconductor devices to be tested is determined by detecting the voltages at the two ends of each of the crimping semiconductor devices to be tested.
The test assembly in the embodiment of the invention comprises a current sensor, a plurality of voltage sensors and a plurality of thermocouples; the current sensor is connected in series with the series structure; the voltage sensors are respectively connected with the crimping semiconductor devices 12 to be tested in parallel in a one-to-one correspondence manner; the thermocouples are arranged in one-to-one correspondence with the semiconductor devices under test 12.
In the embodiment of the invention, the voltage acquired by the voltage sensor is displayed on the mobile terminal through the data acquisition device, so that a worker can judge the failure condition of the device through junction temperature, voltage and other information.
And the current output by the 6000A direct current power supply acquired by the current sensor is stored and displayed on the mobile terminal through the acquisition device.
The temperature regulator 4 in the embodiment of the invention is used for radiating the heat generated by each crimping semiconductor device 12 to be tested into the air; specifically, the mold temperature machine 4 is divided into an internal circulation and an external circulation, wherein the internal circulation is to exchange the temperature of the surface of a device into a built-in water tank through water circulation; the external circulation radiates heat in the water tank to the air through the cooling liquid. Specifically, the mold temperature machine 4 comprises an internal circulation system, a water tank and an external circulation system; the inner circulation system is communicated with the water tank and the water cooling system, and the outer circulation system is communicated with the water tank and the outside air; the internal circulation system is used for converting heat on the surface of the crimping semiconductor device to be tested in the water cooling system to the water tank, and the external circulation system is used for transferring heat in the water tank to outside air.
The bottom of the power cycle test device is also provided with a fuma wheel which is used for moving or fixing the power cycle test device.
The embodiment of the invention also provides a power distribution cabinet which is respectively and electrically connected with the die temperature machine 4 and the 6000A direct current power supply 7 to provide electric energy for the die temperature machine 4.
For example, the number of power cycle fixtures 4 may be set to 3, and when 4 devices under test of the semiconductor under test may be set in each of the power cycle fixtures 4, 12 devices under test of the semiconductor under test may be tested at a time of power cycle test.
Example 2
The embodiment 2 of the invention provides a power cycle test method of a 6000A crimping semiconductor device, which is applied to the power cycle test system, and comprises the following steps:
Carrying out a circulating power test under a preset current test condition on a crimping semiconductor device to be tested by adopting a calibration clamp to obtain a test result under the preset current test condition; the preset current is at least less than 6000A.
And determining a relation model of voltage, current and junction temperature based on a test result under a preset current test condition.
And carrying out a cyclic power test under 6000A test conditions on the crimping type semiconductor device to be tested by adopting a power cyclic test system to obtain a test result under the 6000A test conditions.
And determining the junction temperature of the crimping semiconductor device to be tested under the 6000A test condition according to the relation model and the test result under the 6000A test condition.
The calibration fixture in the embodiment of the invention can perform junction temperature calibration experiments of two crimping semiconductor devices each time, and is electrically connected with the control cabinet 1 during the calibration experiments.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
1. the crimping type power cycle clamp for the semiconductor device is separated from the power cycle test device, and is connected with the power cycle test device through the copper bars, so that the clamp can be assembled and disassembled conveniently during the test, and the clamp can be moved or fixed through the Fuma wheel, so that the crimping type power cycle clamp has stronger flexibility.
2. The whole system comprises three branches, four semiconductor devices can be additionally held by each crimping semiconductor device power circulation clamp, and the whole test bench can simultaneously test 12 crimping semiconductor devices, so that the efficiency of power circulation test is greatly improved.
3. The 6000A power supply can provide a crimping semiconductor device with a larger current level, and meets the requirements of industry and scientific research.
The principles and embodiments of the present invention have been described herein with reference to specific examples, the description of which is intended only to assist in understanding the methods of the present invention and the core ideas thereof; also, it is within the scope of the present invention to be modified by those of ordinary skill in the art in light of the present teachings. In view of the foregoing, this description should not be construed as limiting the invention.
Claims (10)
1. A power cycle test system for a 6000A crimped semiconductor device, the power cycle test system comprising: the power cycle test device, the semiconductor switch group, the mold temperature machine and at least one power cycle clamp; the power cycle test apparatus includes: 6000A direct current power supply and a control cabinet;
The positive electrode of the 6000A direct-current power supply is connected with one end of the semiconductor switch group through a copper bar, and the other end of the semiconductor switch group is connected with the positive electrode input end of the power circulation clamp; the negative electrode of the 6000A direct current power supply is connected with the negative electrode input end of the power circulation clamp;
The die temperature machine is connected with a water cooling system of the power circulation clamp;
The power cycle clamp is used for clamping, crimping and testing the crimping semiconductor device to be tested when the power cycle test is carried out;
and the control cabinet is respectively connected with the control end of the semiconductor switch group and the test signal output end of the power circulation clamp.
2. The power cycle test system of a 6000A crimped semiconductor device according to claim 1, wherein the power cycle clamp comprises a clamping assembly, a water cooling system and a test assembly;
the clamping assembly is used for clamping and crimping the crimping semiconductor device to be tested;
The water cooling system is used for cooling the crimping semiconductor device to be tested;
The testing component is used for testing the crimping type semiconductor device to be tested.
3. The power cycle test system of a 6000A crimped semiconductor device according to claim 2, wherein the clamping assembly comprises: the device comprises a circulating clamp shell, a top pressing plate, a first circulating clamp copper bar, a second circulating clamp copper bar and a disc spring;
The top pressure plate, the first circulating clamp copper bar, the second circulating clamp copper bar and the disc spring are sequentially arranged in the circulating clamp shell from top to bottom;
The first circulating clamp copper bar is connected with the other end of the semiconductor switch group; the second circulating clamp copper bar is connected with the negative electrode of the 6000A direct-current power supply;
The plurality of crimping semiconductor devices to be tested are connected in series to form a series structure;
One end of the series structure is connected with the first circulating clamp copper bar, and the other end of the series structure is connected with the second circulating clamp copper bar.
4. The 6000A crimped semiconductor device power cycle test system according to claim 3, wherein the water cooling system comprises a water separator and a plurality of water-cooled radiators;
The water-cooling radiators are sequentially arranged between the first circulating clamp copper bar and the second circulating clamp copper bar from top to bottom;
the first input ends of the water separators are connected with the mold temperature machine, and the first output ends of the water separators are respectively connected with the input ends of the water-cooling radiators in a one-to-one correspondence manner;
The crimping semiconductor device to be tested is arranged between two adjacent water-cooling radiators;
The second input ends of the water separator are respectively connected with the output ends of the water-cooling radiators in a one-to-one correspondence mode, and the second output ends of the water separator are connected with the die temperature machine.
5. The 6000A crimped semiconductor device power cycle testing system according to claim 3, wherein the test assembly comprises a current sensor, a plurality of voltage sensors, and a plurality of thermocouples;
The current sensor is connected in series with the series structure;
the voltage sensors are respectively connected with the crimping semiconductor devices to be tested in parallel in a one-to-one correspondence manner;
and the thermocouples are arranged in one-to-one correspondence with the crimping semiconductor devices to be tested.
6. The power cycle test system of a 6000A crimped semiconductor device according to claim 1, wherein the 6000A dc power supply comprises a plurality of constant current sources connected in parallel, and the semiconductor switch group comprises a plurality of semiconductor switches connected in parallel.
7. The 6000A crimped semiconductor device power cycle test system according to claim 1, wherein the die temperature machine comprises an internal circulation system, a water tank and an external circulation system;
The inner circulation system is communicated with the water tank and the water cooling system, and the outer circulation system is communicated with the water tank and the outside air;
the internal circulation system is used for converting heat on the surface of the crimping semiconductor device to be tested in the water cooling system to the water tank, and the external circulation system is used for transferring heat in the water tank to outside air.
8. The 6000A crimp semiconductor device power cycle test system of claim 2, wherein the control cabinet comprises a data acquisition module, a switching signal generation device and a mobile terminal;
the data acquisition module is respectively connected with the test assembly and the mobile terminal, and is used for acquiring voltage, current and temperature in a power cycle test and transmitting the voltage, current and power to the mobile terminal;
the switch signal generating device is connected with the control end of the semiconductor switch group.
9. The power cycle test system of a 6000A crimped semiconductor device according to claim 1, wherein the bottom of the power cycle test device is further provided with a fuse Ma Lun.
10. A power cycle test method of a 6000A crimped semiconductor device, characterized in that the power cycle test method is applied to the power cycle test system according to any one of claims 1 to 7, the power cycle test method comprising the steps of:
carrying out a circulating power test under a preset current test condition on a crimping semiconductor device to be tested by adopting a calibration clamp to obtain a test result under the preset current test condition; the preset current is at least less than 6000A;
Determining a relation model of voltage, current and junction temperature based on a test result under a preset current test condition;
Performing a cyclic power test under 6000A test conditions on the crimping semiconductor device to be tested by adopting a power cyclic test system to obtain a test result under the 6000A test conditions;
And determining the junction temperature of the crimping semiconductor device to be tested under the 6000A test condition according to the relation model and the test result under the 6000A test condition.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202410155519.0A CN118011170A (en) | 2024-02-04 | 2024-02-04 | Power cycle test system and method for 6000A crimping semiconductor device |
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| CN202410155519.0A CN118011170A (en) | 2024-02-04 | 2024-02-04 | Power cycle test system and method for 6000A crimping semiconductor device |
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| CN202410155519.0A Pending CN118011170A (en) | 2024-02-04 | 2024-02-04 | Power cycle test system and method for 6000A crimping semiconductor device |
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| CN (1) | CN118011170A (en) |
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