CN117999635A - Method for transferring single crystal SIC layers onto a polycrystalline SIC carrier using a polycrystalline SIC interlayer - Google Patents
Method for transferring single crystal SIC layers onto a polycrystalline SIC carrier using a polycrystalline SIC interlayer Download PDFInfo
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- CN117999635A CN117999635A CN202280064913.2A CN202280064913A CN117999635A CN 117999635 A CN117999635 A CN 117999635A CN 202280064913 A CN202280064913 A CN 202280064913A CN 117999635 A CN117999635 A CN 117999635A
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 239000013078 crystal Substances 0.000 title abstract description 29
- 239000010410 layer Substances 0.000 title description 96
- 239000011229 interlayer Substances 0.000 title description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 126
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 120
- 239000000758 substrate Substances 0.000 claims abstract description 95
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 11
- 239000002131 composite material Substances 0.000 claims abstract description 10
- 238000002513 implantation Methods 0.000 claims abstract description 10
- 150000002500 ions Chemical class 0.000 claims abstract description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 4
- 238000000151 deposition Methods 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 14
- 238000005498 polishing Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000001953 recrystallisation Methods 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 230000003313 weakening effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005328 electron beam physical vapour deposition Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 230000010070 molecular adhesion Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001928 direct liquid injection chemical vapour deposition Methods 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Abstract
The invention relates to a method for producing a composite structure comprising a monocrystalline silicon carbide (SiC) film (12) on a polycrystalline SiC carrier substrate (20). The method comprises the following steps: forming a polycrystalline SiC layer (11) on a donor substrate, at least one surface portion of which is made of single crystal SiC; implanting ion species into said surface portion of the donor substrate, either before or after said forming, to form a brittle plane defining a thin film (12) of single crystal SiC to be transferred; after the implantation and the formation, the donor substrate is bonded to a polycrystalline SiC carrier substrate (20), the polycrystalline SiC layer (11) is located at the bonding interface, and the donor substrate is separated along the brittle plane, thereby transferring the polycrystalline SiC layer (11) and the monocrystalline SiC film (12) onto the polycrystalline SiC carrier substrate (20).
Description
Technical Field
The field of the invention is that of semiconductor materials for microelectronic elements. The invention more particularly relates to a method for manufacturing a composite structure comprising a thin layer of monocrystalline silicon carbide on a carrier substrate made of polycrystalline silicon carbide.
Background
Silicon carbide (SiC) is increasingly being used in power electronics applications, particularly to meet the demands of ever-increasing electronic products such as, for example, electric vehicles. Single crystal SiC based power devices and integrated power systems can in fact manage power densities much higher than conventional silicon power devices and integrated power systems while using active areas with smaller dimensions.
However, single crystal SiC substrates intended for the microelectronics industry remain expensive and difficult to supply in large sizes. It is therefore advantageous to use a layer transfer solution to produce a composite structure that typically includes thin layers of single crystal SiC on a low cost carrier substrate. One well-known thin layer transfer solution is the Smart Cut TM method, which is based on implantation of light ions and bonding by direct bonding. Such a method can, for example, produce a composite structure comprising a thin layer made of monocrystalline SiC, which is taken from a donor substrate made of monocrystalline SiC and is in direct contact with a carrier substrate made of polycrystalline SiC.
However, it is still difficult to obtain a high-quality direct bond by molecular adhesion between a substrate made of single crystal SiC and a substrate made of polycrystalline SiC, because it is complicated to manage the surface finish and roughness of the substrate.
In the target applications it is required to have good thermal and electrical conduction between a thin layer made of monocrystalline SiC and a carrier substrate made of polycrystalline SiC. Furthermore, the presence of bonding defects at the bonding interface is extremely detrimental to the quality of the structure produced in the thin layer made of single-crystal SiC. For example, the absence of adhesion between the two surfaces at the bonding defect may result in localized delamination of the thin layer at that location during transfer of the thin layer from the single crystal SiC substrate to the polycrystalline SiC substrate.
Two solutions for achieving the bonding of a substrate made of monocrystalline SiC and a substrate made of polycrystalline SiC have been reported in the literature, but there is currently no evidence of their effectiveness on an industrial scale. Thus, surface Activated Bonding (SAB), which includes activating the surfaces to be bonded, typically by argon bombardment, on the one hand, and Atomic Diffusion Bonding (ADB), which includes sputter deposition of ultra-thin layers and bonding under ultra-high vacuum, on the other hand, are known. A disadvantage of these solutions is that an unstable layer can be created at the bonding interface, which unstable layer can create bonding defects and negatively affect the electrical conduction.
Disclosure of Invention
It is an object of the present invention to provide a technique that overcomes these drawbacks, thereby providing a composite structure comprising a thin layer of monocrystalline SiC of very high quality, in particular in order to improve the performance and reliability of the power devices intended to be produced in said thin layer.
To this end, the present invention provides a method for manufacturing a composite structure comprising a thin layer of single crystal silicon carbide SiC on a polycrystalline SiC carrier substrate, the method comprising the steps of:
Forming a polycrystalline SiC layer on a donor substrate, at least a surface portion of the donor substrate being made of monocrystalline SiC,
Implanting ion species in said surface portion of the donor substrate, either before or after said forming, to form a weakened plane defining a thin monocrystalline SiC layer to be transferred,
-After said implanting and said forming, bonding the donor substrate with a polycrystalline SiC carrier substrate, the polycrystalline SiC layer being located at the bonding interface, and separating the donor substrate along the plane of weakness, thereby transferring the polycrystalline SiC layer and the thin monocrystalline SiC layer onto the polycrystalline SiC carrier substrate.
Certain preferred but non-limiting aspects of the method are as follows:
-the polytype of the polycrystalline SiC layer is the same as the polytype of the carrier substrate;
-the formation of the polycrystalline SiC layer comprises deposition of polycrystalline SiC;
-the deposition of polycrystalline SiC is chemical vapor deposition;
-the deposition of polycrystalline SiC is carried out at a temperature lower than 1000 ℃;
-the formation of the polycrystalline SiC layer comprises deposition of an amorphous SiC layer and a recrystallization anneal applied to the amorphous SiC layer;
-the thickness of the polycrystalline SiC layer deposited on the donor substrate is between 10nm and 10 μm;
-it comprises thinning and/or polishing the surface of the polycrystalline SiC layer intended to be at the bonding interface during bonding and/or the surface of the carrier substrate intended to be at the bonding interface during bonding;
-it further comprises forming a bonding layer on each of the donor substrate and the carrier substrate, said bonding being performed by direct bonding of the bonding layers thus formed;
the bonding layer formed on each of the donor substrate and the carrier substrate is a metal layer, such as a tungsten layer or a titanium layer;
-the bonding layer formed on each of the donor substrate and the carrier substrate is a silicon layer, a carbon layer or a silicon carbide layer;
the melting point of the bonding layer is lower than the annealing temperature applied in the bonding step.
Drawings
Other aspects, objects, advantages and features of the invention will become more apparent upon reading the following detailed description of preferred embodiments, given by way of non-limiting example and with reference to the accompanying drawings, in which:
FIG. 1 is a schematic cross-sectional view of a single crystal SiC donor substrate;
FIG. 2 is a schematic cross-sectional view of a deposition of a polycrystalline SiC layer on a surface of a single crystal SiC donor substrate;
FIG. 3 is a schematic cross-sectional view of a thin single crystal SiC layer to be transferred defined by forming a plane of weakness in the donor substrate of FIG. 1 by implantation of an ionic species;
FIG. 4 is a schematic cross-sectional view of the bonding of the donor substrate and the carrier substrate of FIG. 2;
fig. 5 is a schematic cross-sectional view of separation of a donor substrate along a plane of weakness to transfer a thin single crystal SiC layer onto a carrier substrate.
Detailed Description
The present invention relates to a method for manufacturing a composite structure comprising a thin layer of monocrystalline SiC on a polycrystalline SiC carrier substrate. The Smart Cut TM method includes transferring a thin layer of single crystal SiC from a donor substrate onto a carrier substrate, at least a surface portion of the donor substrate being made of single crystal SiC.
The donor substrate may be a bulk substrate of single crystal SiC. In other embodiments, the donor substrate may be a composite substrate including a surface layer of single crystal SiC and at least one other layer of another material. In this case, the thickness of the single crystal SiC layer will be greater than or equal to 0.5 μm.
According to the invention, a polycrystalline SiC layer is formed on a donor substrate prior to bonding with a polycrystalline SiC carrier substrate. In this way, a bonding interface is formed between materials having the same morphology (i.e., two types of polycrystalline SiC), rather than between prior art hetero-crystalline structures (i.e., single crystal SiC added to polycrystalline SiC). The disadvantages associated with the incorporation of these heterostructures are avoided. In particular, the present invention is able to create no conductive barrier at the bonding interface and the contact area is not reduced by the formation of a cavity at that interface.
Referring to fig. 1, the method according to the present invention starts with providing a donor substrate 10, at least a surface portion of the donor substrate 10 being made of monocrystalline SiC. In the drawings, a bulk substrate 10 of single crystal SiC is shown.
Referring to fig. 2, the method includes the step of forming polycrystalline SiC layer 11 on donor substrate 10. The polycrystalline SiC layer 11 formed on the donor substrate preferably has a thickness of between 10nm and 10 μm, and even more preferably has a thickness of less than 50 nm.
The grain size of polycrystalline SiC layer 11 is preferably less than 30nm, and even more preferably less than 10nm, which can limit the surface roughness of layer 11 deposited thereby. Such reduced grain size additionally provides an advantage in that conditions for forming polycrystalline SiC layer 11 may be close to those for amorphous SiC layers, whereby layer 11 formed can be a mixture of amorphous SiC having small grains and a high proportion without adversely affecting the effects of the present invention.
Silicon carbide has various crystal forms (also referred to as polytypes). The most common are forms 4H, 6H and 3C. Preferably, the formation of polycrystalline SiC layer 11 is performed so as to have the same polytype as carrier substrate 20 (typically a 3C polytype).
In one possible embodiment, the polycrystalline SiC layer is formed by deposition of polycrystalline SiC. Such deposition of the polycrystalline SiC layer may be physical vapor deposition (e.g., EBPVD [ electron beam physical vapor deposition ] type) or chemical vapor deposition (e.g., DLI-CVD [ direct liquid injection chemical vapor deposition ] type). In one possible embodiment, the deposition of the polycrystalline SiC layer is performed at a temperature below 1000 ℃, preferably below 900 ℃, even more preferably below 850 ℃. This embodiment proves particularly advantageous when the deposition of polycrystalline SiC layer 11 is carried out after the implantation of ionic species, described hereinafter, for forming a plane of weakness in the donor substrate. Such a relatively low temperature is particularly capable of limiting the growth of the cavities present in the plane of weakness, which would lead to the deformation and foaming of the layer directly connected to the cavities, in the absence of the hardening effect provided to the donor substrate.
In one embodiment variant that may be particularly useful when the ion species implantation described below is performed after formation of polycrystalline SiC layer 11, the formation of the polycrystalline SiC layer first includes deposition (in whole or in part) of a layer of amorphous SiC, followed by a recrystallization anneal (typically at a temperature above 1100 ℃) that converts the amorphous SiC layer into polycrystalline crystals that make up polycrystalline SiC layer 11.
In one possible embodiment, the formation of polycrystalline SiC layer 11 is accompanied by the formation of a bonding layer, such as a silicon layer, a carbon layer, or a silicon carbide layer, or a metal layer (such as a tungsten layer or a titanium layer), on polycrystalline SiC layer 11 and the carrier substrate, respectively. The bond layer may be formed according to a Physical Vapor Deposition (PVD) method using argon or an argon/nitrogen mixture or a nitrogen/propane mixture for the gas used to ablate the target. The melting point of the bonding layer is preferably lower than the annealing temperature applied in the bonding step. Thus, for example, when an anneal at a temperature of about 1700 ℃/1800 ℃ is applied in the bonding step, a bonding layer made of silicon or titanium is selected.
Referring to fig. 3, before or after forming polycrystalline SiC layer 11, the method further includes implanting ion species in donor substrate 10 to form a weakened plane 13 defining thin single crystal SiC layer 12 to be transferred. In the drawing, implantation is performed after deposition of polycrystalline SiC layer 11.
The implanted species typically includes hydrogen and/or helium. One skilled in the art can define the required implant dose and energy.
When the donor substrate is a composite substrate, implantation is performed to form a plane of weakness in a surface layer of single crystal SiC of the donor substrate.
Preferably, the thin layer 12 of monocrystalline SiC has a thickness of less than 1 μm. In particular, such thicknesses can be obtained on an industrial scale using the Smart Cut TM method. In particular, injection devices available on industrial lines are capable of achieving such injection depths.
Referring to fig. 4, after the implantation and the forming, the method includes bonding a donor substrate with a carrier substrate. Bonding is a direct bond without an intermediate electrically insulating layer obtained by molecular adhesion of the contact surfaces. The bonding is typically performed at ambient temperature. The bonding is preferably performed under vacuum.
During this bonding process, polycrystalline SiC layer 11 previously formed on the donor substrate is located at the bonding interface. The expression "layer at the bonding interface" is understood to mean a layer at the surface side of the donor substrate bonded to the carrier substrate, but does not necessarily mean a direct contact between the layer and the carrier substrate. Thus, the layer may be directly bonded to the carrier substrate or covered with a bonding layer (such as the bonding layer previously mentioned for bonding). The advantage of bonding by direct contact of the polycrystalline layers is that the interface between the single crystal SiC and the polycrystalline SiC of the bonding interface is physically separated.
Such bonding is typically performed prior to an operation (such as, for example, finish polishing, wet or dry cleaning, surface activation, etc.) for preparing the surfaces to be bonded (e.g., the two polycrystalline SiC surfaces herein). In particular, the method may include thinning and/or polishing the surface of polycrystalline SiC layer 11 intended to be at the bonding interface during bonding and/or the surface of carrier substrate 20 intended to be at the bonding interface during bonding.
Referring to fig. 5, the method then includes separating donor substrate 10 along weakened plane 13 to transfer polycrystalline SiC layer 11 and thin single crystal SiC layer 12 onto carrier substrate 20. In a known manner, such separation may be caused by heat treatment, mechanical action or a combination of these means. The remaining portion 10' of the donor substrate may preferably be recovered for another use.
One or more finishing operations may then be applied to the transferred single crystal SiC layer 12. For example, grinding, cleaning or polishing (e.g., chemical-mechanical polishing (CMP) or fine grinding (which enables the omission of a preferred chemical etch in such grain orientations)) may be performed to eliminate defects associated with implantation of ion species and reduce the roughness of the transferred single crystal SiC layer 12.
Claims (12)
1. A method for preparing a composite structure comprising a thin layer (12) of single crystal silicon carbide, siC, on a polycrystalline SiC carrier substrate (20), the method comprising the steps of:
Forming a polycrystalline SiC layer (11) on a donor substrate (10), at least a surface portion of the donor substrate (10) being made of monocrystalline SiC,
Implanting ion species in said surface portion of the donor substrate (10) before or after said forming, to form a weakened plane (13) defining a thin monocrystalline SiC layer (12) to be transferred,
-After said implantation and said forming, bonding the donor substrate (10) with the polycrystalline SiC carrier substrate (20), the polycrystalline SiC layer (11) being located at the bonding interface, and separating the donor substrate (10) along the weakening plane (13), thereby transferring the polycrystalline SiC layer (11) and the thin monocrystalline SiC layer (12) onto the polycrystalline SiC carrier substrate (20).
2. The method according to claim 1, wherein the polytype of the polycrystalline SiC layer (11) is the same as the polytype of the carrier substrate (20).
3. A method according to any one of claims 1 and 2, wherein the formation of the polycrystalline SiC layer (11) comprises deposition of polycrystalline SiC.
4. A method according to claim 3, wherein the deposition of polycrystalline SiC is chemical vapor deposition.
5. The method of any one of claims 3 and 4, wherein the depositing of polycrystalline SiC is performed at a temperature below 1000 ℃.
6. A method according to any one of claims 1 and 2, wherein the formation of the polycrystalline SiC layer (11) comprises deposition of an amorphous SiC layer and a recrystallization anneal applied to the amorphous SiC layer.
7. A method according to any one of claims 1 to 6, wherein the thickness of the polycrystalline SiC layer (11) formed on the donor substrate is between 10nm and 10 μm.
8. The method according to any one of claims 1 to 7, further comprising thinning and/or polishing the surface of the polycrystalline SiC layer (11) intended to be located at the bonding interface during bonding and/or the surface of the carrier substrate (20) intended to be located at the bonding interface during bonding.
9. The method of any one of claims 1 to 8, further comprising forming a bonding layer on each of the donor substrate and the carrier substrate, the bonding being performed by direct bonding of the bonding layers formed thereby.
10. A method according to claim 9, wherein the bonding layer formed on each of the donor substrate and the carrier substrate is a metal layer, such as a tungsten layer or a titanium layer.
11. The method of claim 9, wherein the bonding layer formed on each of the donor substrate and the carrier substrate is a silicon layer, a carbon layer, or a silicon carbide layer.
12. The method according to any one of claims 9 to 11, wherein the melting point of the bonding layer is lower than the annealing temperature applied in the bonding step.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FRFR2110520 | 2021-10-05 | ||
| FR2110520A FR3127843B1 (en) | 2021-10-05 | 2021-10-05 | Process for transferring a monocrystalline SiC layer onto a polycrystalline SiC support using an intermediate layer of polycrystalline SiC |
| PCT/FR2022/051860 WO2023057709A1 (en) | 2021-10-05 | 2022-10-03 | Method for transferring a monocrystalline sic layer onto a polycrystalline sic carrier using a polycrystalline sic intermediate layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117999635A true CN117999635A (en) | 2024-05-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202280064913.2A Pending CN117999635A (en) | 2021-10-05 | 2022-10-03 | Method for transferring single crystal SIC layers onto a polycrystalline SIC carrier using a polycrystalline SIC interlayer |
Country Status (4)
| Country | Link |
|---|---|
| CN (1) | CN117999635A (en) |
| FR (1) | FR3127843B1 (en) |
| TW (1) | TW202318662A (en) |
| WO (1) | WO2023057709A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116978783B (en) * | 2023-09-25 | 2023-12-12 | 苏州芯慧联半导体科技有限公司 | Preparation method of silicon carbide substrate and silicon carbide substrate |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2810448B1 (en) * | 2000-06-16 | 2003-09-19 | Soitec Silicon On Insulator | PROCESS FOR PRODUCING SUBSTRATES AND SUBSTRATES OBTAINED BY THIS PROCESS |
| FR3099637B1 (en) * | 2019-08-01 | 2021-07-09 | Soitec Silicon On Insulator | manufacturing process of a composite structure comprising a thin monocrystalline Sic layer on a polycrystalline sic support substrate |
-
2021
- 2021-10-05 FR FR2110520A patent/FR3127843B1/en active Active
-
2022
- 2022-09-12 TW TW111134355A patent/TW202318662A/en unknown
- 2022-10-03 WO PCT/FR2022/051860 patent/WO2023057709A1/en active Application Filing
- 2022-10-03 CN CN202280064913.2A patent/CN117999635A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR3127843B1 (en) | 2023-09-08 |
| FR3127843A1 (en) | 2023-04-07 |
| TW202318662A (en) | 2023-05-01 |
| WO2023057709A1 (en) | 2023-04-13 |
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