CN117998956A - Wide band gap perovskite solar cell and laminated solar cell - Google Patents
Wide band gap perovskite solar cell and laminated solar cell Download PDFInfo
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Abstract
The application relates to a wide-bandgap perovskite solar cell and a stacked solar cell. The wide-bandgap perovskite solar cell comprises a first electrode, a functional layer and a second electrode which are arranged in a stacked manner; the functional layer comprises a perovskite layer comprising a wide band gap perovskite material and an additive comprising a methylenediammonium cation salt. The wide-bandgap perovskite solar cell has higher efficiency and stability.
Description
Technical Field
The application relates to the technical field of batteries, in particular to a wide-bandgap perovskite solar cell and a stacked solar cell.
Background
Crystalline silicon solar cells currently occupy about 95% of the world photovoltaic market, however, the highest efficiency (27%) of single crystalline silicon solar cells is approaching the theoretical limit (29%) thereof, and in order to further improve the efficiency of the solar cells, in the conventional method, the crystalline silicon solar cells are stacked with photovoltaic semiconductor materials having wider band gaps than the crystalline silicon to prepare stacked cells.
The perovskite material has the advantages of components, adjustable band gap, solution processing, low cost and the like, and the laminated battery prepared by superposing the perovskite material and the crystalline silicon solar cell can exceed the theoretical limit of a single cell. The efficiency of the two-end laminated solar cell of the crystalline silicon/perovskite reaches 33.9%, the efficiency of the four-end laminated solar cell exceeds 30%, and the crystalline silicon/perovskite laminated solar cell has wide commercial development potential.
The stacked solar cell of crystalline silicon/perovskite requires stacking a wide band gap perovskite solar cell with a forbidden band width greater than 1.65eV with a crystalline silicon solar cell. However, the efficiency and stability of conventional wide bandgap perovskite solar cells are to be further improved.
Disclosure of Invention
Based on this, the present application provides a wide band gap perovskite solar cell having high efficiency and stability, and a stacked solar cell including the same.
In a first aspect of the application, there is provided a wide bandgap perovskite solar cell comprising a first electrode, a functional layer and a second electrode arranged in a stack;
the functional layer includes a perovskite layer comprising a wide band gap perovskite material and an additive including a methylenediammonium (MDA +) cationic salt.
In one embodiment, the anions in the methylenediammonium (MDA +) cation salt include one or more of halide, sulfonate, formate, and tetrafluoroborate ions.
In one embodiment, the methylenediammonium (MDA +) cationic salt comprises one or more of methylenediamino dihydrochloride (MDACl 2) and methylenediamino dihydroiodate.
In one embodiment, the mass percentage of the methylenediammonium (MDA +) cationic salt in the perovskite layer is 0.02% -0.15%.
In one embodiment, the wide bandgap perovskite material has the following structural formula:
AB (X nY1-n)3, wherein A comprises CH 3NH3 + (methylamine, which can be denoted as MA +）、C4H9NH3 +、NH2CH＝NH2 + (formamidine, which can be denoted as FA +)) and Cs +, B comprises one or both of Pb 2+ and Sn 2+, X, Y comprises Cl -、Br- or I -, and X is different from Y, 0 < n < 1.
In one embodiment, the functional layer includes a hole transport layer, the perovskite layer, an electron transport layer, and a buffer layer that are stacked.
In one embodiment, the method for preparing the perovskite layer comprises the following steps:
preparing a precursor solution according to the composition of the wide-bandgap perovskite material;
and mixing the precursor solution with the additive, and forming and annealing the obtained mixture to prepare the perovskite layer.
In a second aspect of the application, a stacked solar cell is provided, comprising a crystalline silicon solar cell in a stacked arrangement and a wide bandgap perovskite solar cell according to the first aspect.
In one embodiment, the crystalline silicon solar cell comprises one or more of a PERC cell, TOPCon cell, HJT cell, IBC cell, and HBC cell.
In one embodiment, the stack is provided as a two-terminal stack or a four-terminal stack.
According to the wide-band-gap perovskite solar cell, the methylene diammonium cation salt is introduced into the wide-band-gap perovskite material to serve as an additive, so that the phase stability of the wide-band-gap perovskite material can be effectively improved, and the efficiency and the stability, particularly the light stability, of the wide-band-gap solar cell or the corresponding crystalline silicon/perovskite laminated solar cell are further improved.
Drawings
FIG. 1 is a schematic diagram of a wide bandgap perovskite solar cell according to one embodiment of the application;
FIG. 2 is a schematic diagram of a four-terminal stacked solar cell according to an embodiment of the present application;
FIG. 3 is a schematic diagram of a stacked solar cell with two stacked ends according to an embodiment of the present application;
FIG. 4 is a graph showing the results of photo-stability testing of the wide bandgap perovskite solar cell of example 1 and comparative example 1 of the application;
fig. 5 is a graph showing the results of the photo-stability test of the crystalline silicon/perovskite two-layered solar cell of the control device of the present application and example 4.
Detailed Description
The wide band gap perovskite solar cell and the stacked solar cell of the present application are described in further detail below with reference to specific examples. The present application may be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
Herein, "one or more" refers to any one, any two, or any two or more of the listed items.
In the present application, "first aspect", "second aspect", etc. are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or quantity, nor as implying an importance or quantity of the indicated technical features. Moreover, "first," "second," etc. are for non-exhaustive list description purposes only, and it should be understood that no closed limitation on the number is made.
In the application, the technical characteristics described in an open mode comprise a closed technical scheme composed of the listed characteristics and also comprise an open technical scheme comprising the listed characteristics.
In the present application, the numerical ranges are referred to as continuous, and include the minimum and maximum values of the ranges, and each value between the minimum and maximum values, unless otherwise specified. Further, when a range refers to an integer, each integer between the minimum and maximum values of the range is included. Further, when multiple range description features or characteristics are provided, the ranges may be combined. In other words, unless otherwise indicated, all ranges disclosed herein are to be understood to include any and all subranges subsumed therein.
The percentage content referred to in the present application refers to mass percentage for both solid-liquid mixing and solid-solid mixing and volume percentage for liquid-liquid mixing unless otherwise specified.
The percentage concentrations referred to in the present application refer to the final concentrations unless otherwise specified. The final concentration refers to the ratio of the additive component in the system after the component is added.
The temperature parameter in the present application is not particularly limited, and may be a constant temperature treatment or a treatment within a predetermined temperature range. The constant temperature process allows the temperature to fluctuate within the accuracy of the instrument control.
The room temperature in the present application is generally 4 ℃ to 30 ℃, preferably 20+ -5 ℃.
Wide band gap perovskite solar cells typically require the use of a mixed component of halogen (I -、Br-、Cl-) to obtain a forbidden band width (greater than 1.65 eV) that matches that of crystalline silicon solar cells. However, research shows that the perovskite film mixed with halogen is easy to generate halogen phase separation under illumination, so that the stability of the battery is reduced, meanwhile, defects can be generated in the halogen phase separation, the carrier recombination is accelerated, and the efficiency of the battery is reduced.
In a first aspect of the application, there is provided a wide bandgap perovskite solar cell comprising a first electrode, a functional layer and a second electrode arranged in a stack; the functional layer includes a perovskite layer comprising a wide band gap perovskite material and an additive including a methylenediammonium (MDA +) cationic salt.
In some examples, the anions in the methylenediammonium (MDA +) cation salt include one or more of halide, sulfonate, formate, and tetrafluoroborate ions. Further, the anions in the methylenediammonium (MDA +) cation salt include halide ions, which can further improve the efficiency and stability of the battery.
In some examples, the methylenediammonium (MDA +) cationic salt comprises one or more of methylenediamino dihydrochloride (MDACl 2) and methylenediamino dihydroiodate.
In some examples, the mass percent of the methylenediammonium (MDA +) cationic salt in the perovskite layer is 0.02% -0.15%. Specifically, the mass percentages include, but are not limited to: 0.02%, 0.05%, 0.07%, 0.1%, 0.12%, 0.15% or a range therebetween.
The wide bandgap perovskite material may be, without limitation, an all-inorganic perovskite component, an organometallic halogen perovskite component, or an organic-inorganic hybrid perovskite component. In some of these examples, the wide bandgap perovskite material has the following structural formula:
AB (X nY1-n)3, where A includes CH 3NH3 + (methylamine, which may be referred to as one or more of MA +）、C4H9NH3 +、NH2CH＝NH2 + (formamidine, which may be referred to as FA +) and Cs +; B includes one or both of Pb 2+ and Sn 2+; X, Y includes Cl -、Br- or I -, and X is different from Y; 0 < n < 1. Specifically, n includes, but is not limited to, 0.1, 0.15, 0.2, 0.25, 0.3, 0.35, 0.4, 0.45, 0.5, 0.55, 0.6, 0.65, 0.7, 0.75, 0.8, 0.85, 0.9, 0.95, or a range between any two of the foregoing).
Illustratively, the wide bandgap perovskite material includes Cs0.05FA0.8MA0.15Pb(I0.75Br0.25)3、Cs0.25FA0.75Pb(I0.75Br0.25)3、Cs0.15FA0.65MA0.2Pb(I0.8Br0.2)3、Cs0.05(FA0.77MA0.23)0.95Pb(I0.77Br0.23)3.
In some examples, the functional layer includes a hole transport layer, the perovskite layer, an electron transport layer, and a buffer layer that are stacked. The first electrode is, without limitation, a transparent electrode (i.e., an electrode on the light incident side), and the hole transport layer is laminated on the surface of the first electrode. The structure of the corresponding wide bandgap perovskite solar cell 100 is shown in fig. 1, and includes a first electrode 101, a hole transport layer 102, a perovskite layer 103, an electron transport layer 104, a buffer layer 105, and a second electrode 106, which are sequentially stacked. It will be appreciated that the order of lamination of the layers (including the first electrode, functional layer, second electrode) may also be different in other wide bandgap perovskite solar cells or stacked solar cells.
The transparent electrode may be ITO, FTO, IZO or IZrO without limitation; the hole transport layer may be made of NiOx or a self-assembled layer, specifically, may be a self-assembled monolayer, and the material includes one or more of 2PACz, me-4PACz and MeO-2PACz, or may be a double-layer structure formed by laminating NiOx and the self-assembled monolayer, and the thickness is 1 nm-40 nm; the thickness of the perovskite layer is 1-3 mu m; the material of the electron transport layer can be one or more of C 60、C70 and PCBM, and the thickness is 10 nm-80 nm; the buffer layer can be made of BCP or ALD (SnO 2) with the thickness of 4 nm-30 nm; the second electrode may be a transparent conductive electrode such as ITO, IZO, IZrO, fabricated by, for example, magnetron sputtering, or may be a metal electrode such as Ag, au, or Cu fabricated by, for example, thermal evaporation or screen printing.
In some examples, the method of preparing the perovskite layer includes the steps of:
preparing a precursor solution according to the composition of the wide-bandgap perovskite material;
and mixing the precursor solution with the additive, and forming and annealing the obtained mixture to prepare the perovskite layer.
The molding method may be, without limitation, solution processing such as spin coating, blade coating, or slot coating.
Further, the concentration of the additive in the precursor solution is 0.5 mg/mL-3 mg/mL. Specifically, the concentration of the additive in the precursor solution includes, but is not limited to: 0.5mg/mL, 1mg/mL, 1.5mg/mL, 2mg/mL, 2.5mg/mL, 3mg/mL, or a range between any two of the foregoing. Without limitation, the total concentration of precursor material in the precursor solution may be 1.7mol/L.
In a second aspect of the application, there is provided a stacked solar cell comprising a crystalline silicon solar cell in a stacked arrangement and a wide bandgap perovskite solar cell as described above.
In some examples, the crystalline silicon solar cell includes one or more of a PERC cell, TOPCon cell, HJT cell, IBC cell, and HBC cell.
In some of these examples, the stack is provided as a four-terminal stack. Further, the crystalline silicon solar cell and the wide-bandgap perovskite solar cell in the stacked solar cell are mechanically stacked, and the structure of the stacked solar cell is as shown in fig. 2, where the crystalline silicon solar cell 200 is stacked on the second electrode side of the wide-bandgap perovskite solar cell 100.
In other examples, the stack is provided as a two-end stack. Further, as shown in fig. 3, the stacked solar cell includes a crystalline silicon solar cell 300, a composite layer 301, a hole transport layer 302, a perovskite layer 303, an electron transport layer 304, a buffer layer 305, a first electrode 306, a return reduction layer 307, and a second electrode 308 on the back side of the crystalline silicon solar cell, which are stacked in this order. Without limitation, the composite layer may be a tunneling junction, IZO, ITO, or IZrO; the material of the anti-reflection layer may be one or more of MgF 2, liF, and SiO 2.
The experimental parameters not specified in the following specific examples are preferentially referred to the guidelines given in the present document, and may also be referred to the experimental manuals in the art or other experimental methods known in the art, or to the experimental conditions recommended by the manufacturer.
The starting materials and reagents referred to in the following specific examples may be obtained commercially or may be prepared by known means by those skilled in the art.
Example 1
The structure of the perovskite solar cell with wide band gap is shown in fig. 1, and the preparation method is as follows:
(1) A hole transport layer was prepared by depositing a self-assembled monolayer of 2PACz, at a concentration of 1mg/mL, in ethanol in a solvent of 50. Mu.L on ITO glass having a sheet resistance of less than 15. OMEGA.and spin-coating at 3000rpm for 30s, followed by heating at 100deg.C for 10 minutes.
(2) Depositing a Cs 0.05MA0.15FA0.8PbI0.75Br0.25 perovskite layer on the hole transport layer, wherein 1.7mol/L perovskite precursor solution contains 0.15% by mass of methylene diamine dihydrochloride, taking 100 mu L precursor solution, spin-coating for 50s at 2000rpm, spin-coating for 10s at 7000rpm, dropwise adding 150 mu L chlorobenzene for 8s before ending, and heating for 20 minutes at 100 ℃ after ending to prepare the perovskite layer.
(3) And performing thermal evaporation on 25nm C 60, 6nm BCP and 100nm silver to finish the preparation of the device.
Example 2
The present embodiment is a wide bandgap perovskite solar cell, and its structure and preparation method are the same as those of embodiment 1, and the main difference is that: the methylene diamine dihydrochloride is replaced by the methylene diamine dihydroiodate in an equivalent way.
Comparative example 1
The comparative example is a wide bandgap perovskite solar cell, and its structure and preparation method are the same as example 1, and the main differences are: no methylenediamine dihydrochloride was added.
Comparative example 2
The comparative example is a wide bandgap perovskite solar cell, and its structure and preparation method are the same as example 1, and the main differences are: the methylenediamine dihydrochloride is replaced with an equivalent amount of methylamine hydrochloride.
Comparative example 3
The comparative example is a wide bandgap perovskite solar cell, and its structure and preparation method are the same as example 1, and the main differences are: an equivalent substitution of dimethylamine hydrochloride for methylenediamine dihydrochloride was performed.
Test example 1:
The test example is an efficiency test of a battery.
The testing method comprises the following steps: the test in a glove box, the temperature of the glove box is 25 ℃, the water and oxygen content is less than 0.01ppm, the J-V curve of a battery device passes through a Keithley 2400 source list test, the light source AM1.5G,100mW/cm 2 and the light source intensity passes through standard silicon battery calibration, the voltage test range is-0.1V-1.3V, and the delay time is 50ms.
The test results are shown in table 1 below:
TABLE 1
It can be seen that examples 1 and 2 use methylenediammonium cation salt as an additive, and the efficiency and light stability of the battery are significantly improved.
Example 3
The structure of the crystalline silicon/perovskite four-layer solar cell is shown in fig. 2, wherein the wide bandgap perovskite solar cell adopts the device of the embodiment 1, and the crystalline silicon solar cell is HJT cells. The preparation method comprises the following steps:
The wide band gap perovskite solar cell was prepared in the same manner as in example 1, except that the BCP thermally evaporated in example 1 was changed to ALD (SnO 2) having a thickness of 12nm and the silver electrode was changed to a sputtered 40nm IZO transparent electrode. The crystalline silicon/perovskite four-layer laminated solar cell is formed by mechanically superposing the wide-band-gap perovskite solar cell and a HJT crystalline silicon cell, wherein the transparent electrode side of the wide-band-gap perovskite solar cell is tightly attached to the crystalline silicon cell.
Test example 1 the performance of the wide bandgap perovskite solar cell, the crystalline silicon solar cell, and the crystalline silicon solar cell before lamination in the crystalline silicon/perovskite four-lamination solar cell of this example was respectively tested, and the results are shown in table 2 below:
TABLE 2
Example 4
The present example is a crystalline silicon/perovskite two-layer solar cell, the structure of which is shown in fig. 3, the hole transport layer, the perovskite layer, the electron transport layer, the buffer layer and the first electrode were prepared in the same manner as in example 3, and the material of the composite layer and the reduced-back layer was IZO and MgF 2 and the thickness was 5nm and 200nm. The preparation method comprises the following steps:
The n-type side of HJT-crystal silicon cell is deposited with 5nm transparent conductive oxide IZO as composite layer, and the back side is screen printed with 5 μm thick silver electrode. Following the procedure for the preparation of perovskite solar cell of example 3, the ITO glass was replaced with HJT crystalline silicon cell with a composite layer deposited thereon to prepare a hole transport layer, a perovskite layer, an electron transport layer, a buffer layer, a first electrode, and a return reduction layer.
The voltage test range of the laminated cell is-0.1V-2.1V, and the performance of the crystalline silicon/perovskite two-laminated solar cell and the performance of a comparison device are tested in the same test example 1, wherein the comparison device is the same as the crystalline silicon/perovskite two-laminated solar cell in the embodiment, and the main difference is that the perovskite layer in the same comparison example 1 is adopted. The results are shown in Table 3 below:
TABLE 3 Table 3
Test example 2
The test example is a light stability test of a battery.
The testing method comprises the following steps: the test in a glove box, the temperature of the glove box is 25 ℃, the water and oxygen content is less than 0.01ppm, the battery efficiency is obtained through a J-V curve of a battery device after a light source continuously irradiates the battery for a period of time, the test of a Keithley 2400 source list is passed, the light source AM1.5G,100mW/cm 2 and the light source intensity are calibrated through a standard silicon battery, the voltage test range is-0.1V-2.1V, and the delay time is 50ms.
Test results:
(1) The test results of the wide band gap perovskite solar cells of comparative example 1 and example 1 are shown in fig. 4, and it can be seen that the light stability of example 1 is significantly improved.
(2) The test results of the control device and the crystalline silicon/perovskite two-layer solar cell of example 4 are shown in fig. 5, and it can be seen that the light stability of example 4 is significantly improved.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples merely illustrate a few embodiments of the present application, which are convenient for a specific and detailed understanding of the technical solutions of the present application, but should not be construed as limiting the scope of the claims. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. It should be understood that, based on the technical solutions provided by the present application, those skilled in the art may obtain technical solutions through logical analysis, reasoning or limited experiments, which are all within the scope of protection of the appended claims. The scope of the patent of the application should therefore be determined with reference to the appended claims, which are to be construed as in accordance with the doctrines of claim interpretation.
Claims (10)
1. The wide-bandgap perovskite solar cell is characterized by comprising a first electrode, a functional layer and a second electrode which are stacked;
the functional layer comprises a perovskite layer comprising a wide band gap perovskite material and an additive comprising a methylenediammonium cation salt.
2. The wide band gap perovskite solar cell of claim 1, wherein the anions in the methylenediammonium cation salt comprise one or more of halide ions, sulfonate ions, formate ions, and tetrafluoroborate ions.
3. The wide band gap perovskite solar cell of claim 1, wherein the methylenediammonium cation salt comprises one or more of methylenediamino dihydrochloride and methylenediamino dihydroiodate.
4. The wide band gap perovskite solar cell of claim 1, wherein the mass percent of the methylenediammonium cation salt in the perovskite layer is 0.02% -0.15%.
5. The wide bandgap perovskite solar cell according to any one of claims 1 to 4, wherein the wide bandgap perovskite material has the following structural formula:
AB (X nY1-n)3, wherein A comprises one or more of CH3NH3 +、C4H9NH3 +、NH2CH＝NH2 + and Cs +, B comprises one or both of Pb 2+ and Sn 2+, X, Y comprises Cl -、Br- or I -, and X is different from Y, 0 < n < 1.
6. The wide band gap perovskite solar cell of any one of claims 1 to 4, wherein the functional layer comprises a hole transport layer, the perovskite layer, an electron transport layer, and a buffer layer that are stacked.
7. The wide band gap perovskite solar cell according to any one of claims 1 to 4, wherein the preparation method of the perovskite layer comprises the following steps:
preparing a precursor solution according to the composition of the wide-bandgap perovskite material;
and mixing the precursor solution with the additive, and forming and annealing the obtained mixture to prepare the perovskite layer.
8. A stacked solar cell comprising a stacked crystalline silicon solar cell and the wide bandgap perovskite solar cell according to any one of claims 1 to 7.
9. The laminated solar cell of claim 8, wherein the crystalline silicon solar cell comprises one or more of a PERC cell, TOPCon cell, HJT cell, IBC cell, and HBC cell.
10. The laminated solar cell according to claim 8 or 9, wherein the laminate is provided as a two-terminal laminate or a four-terminal laminate.
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