CN115915786A - Carbazole salt and derivative thereof and application of carbazole salt in preparation of solar cell - Google Patents
Carbazole salt and derivative thereof and application of carbazole salt in preparation of solar cell Download PDFInfo
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- CN115915786A CN115915786A CN202211227121.0A CN202211227121A CN115915786A CN 115915786 A CN115915786 A CN 115915786A CN 202211227121 A CN202211227121 A CN 202211227121A CN 115915786 A CN115915786 A CN 115915786A
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- 238000002360 preparation method Methods 0.000 title abstract description 10
- 125000000609 carbazolyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 title abstract 5
- 150000001875 compounds Chemical group 0.000 claims abstract description 90
- 239000012044 organic layer Substances 0.000 claims abstract description 30
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 17
- 150000002367 halogens Chemical class 0.000 claims abstract description 17
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 16
- 125000003342 alkenyl group Chemical group 0.000 claims abstract description 15
- 125000003545 alkoxy group Chemical group 0.000 claims abstract description 15
- 125000000304 alkynyl group Chemical group 0.000 claims abstract description 15
- 125000003118 aryl group Chemical group 0.000 claims abstract description 15
- 125000001072 heteroaryl group Chemical group 0.000 claims abstract description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 14
- 239000001257 hydrogen Substances 0.000 claims abstract description 14
- 239000010410 layer Substances 0.000 claims description 326
- 230000005525 hole transport Effects 0.000 claims description 68
- 238000010521 absorption reaction Methods 0.000 claims description 64
- 239000000758 substrate Substances 0.000 claims description 46
- 230000004048 modification Effects 0.000 claims description 34
- 238000012986 modification Methods 0.000 claims description 34
- 150000001716 carbazoles Chemical class 0.000 claims description 25
- 150000002431 hydrogen Chemical class 0.000 claims description 13
- -1 (4-phenyl) (2, 4, 6-trimethylphenyl) Chemical group 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical group CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- 229920001167 Poly(triaryl amine) Polymers 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 239000002904 solvent Substances 0.000 claims description 9
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- 229910005855 NiOx Inorganic materials 0.000 claims description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 5
- 229910052783 alkali metal Inorganic materials 0.000 claims description 4
- XIOYECJFQJFYLM-UHFFFAOYSA-N 2-(3,6-dimethoxycarbazol-9-yl)ethylphosphonic acid Chemical compound COC=1C=CC=2N(C3=CC=C(C=C3C=2C=1)OC)CCP(O)(O)=O XIOYECJFQJFYLM-UHFFFAOYSA-N 0.000 claims description 3
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 claims description 3
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 claims description 3
- 229920000144 PEDOT:PSS Polymers 0.000 claims description 3
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 claims description 3
- 150000001340 alkali metals Chemical class 0.000 claims description 3
- PDZKZMQQDCHTNF-UHFFFAOYSA-M copper(1+);thiocyanate Chemical compound [Cu+].[S-]C#N PDZKZMQQDCHTNF-UHFFFAOYSA-M 0.000 claims description 3
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 229910021645 metal ion Inorganic materials 0.000 claims description 3
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 3
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical group [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 3
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- JKSIBASBWOCEBD-UHFFFAOYSA-N N,N-bis(4-methoxyphenyl)-9,9'-spirobi[fluorene]-1-amine Chemical compound COc1ccc(cc1)N(c1ccc(OC)cc1)c1cccc2-c3ccccc3C3(c4ccccc4-c4ccccc34)c12 JKSIBASBWOCEBD-UHFFFAOYSA-N 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 230000005693 optoelectronics Effects 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 10
- 238000000605 extraction Methods 0.000 abstract description 5
- 230000006798 recombination Effects 0.000 abstract description 5
- 238000005215 recombination Methods 0.000 abstract description 4
- 238000005191 phase separation Methods 0.000 abstract description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 230000000903 blocking effect Effects 0.000 description 16
- 238000002161 passivation Methods 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- 239000000243 solution Substances 0.000 description 12
- WFTICIXFISZPCW-UHFFFAOYSA-N 9h-carbazole;potassium Chemical class [K].C1=CC=C2C3=CC=CC=C3NC2=C1 WFTICIXFISZPCW-UHFFFAOYSA-N 0.000 description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 238000004528 spin coating Methods 0.000 description 8
- 239000002243 precursor Substances 0.000 description 7
- 239000011734 sodium Substances 0.000 description 7
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 6
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000008096 xylene Substances 0.000 description 5
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical class C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 4
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 4
- 229910006404 SnO 2 Inorganic materials 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- WTSKDGZCVMJGDJ-UHFFFAOYSA-N potassium;carbazol-9-ide Chemical compound [K+].C1=CC=C2C3=CC=CC=C3[N-]C2=C1 WTSKDGZCVMJGDJ-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- LXTVFZSAMNLFQU-UHFFFAOYSA-N (methoxyamino)oxyethane Chemical group CCONOC LXTVFZSAMNLFQU-UHFFFAOYSA-N 0.000 description 2
- UQPQKLGBEKEZBV-UHFFFAOYSA-N 1,2,3,4-tetrachloro-5-(2,6-dichlorophenyl)benzene Chemical class ClC1=C(Cl)C(Cl)=CC(C=2C(=CC=CC=2Cl)Cl)=C1Cl UQPQKLGBEKEZBV-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000001335 aliphatic alkanes Chemical group 0.000 description 2
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 2
- 229910001413 alkali metal ion Inorganic materials 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000755 effect on ion Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 229910001416 lithium ion Inorganic materials 0.000 description 2
- 150000004702 methyl esters Chemical class 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910001414 potassium ion Inorganic materials 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910001419 rubidium ion Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910001415 sodium ion Inorganic materials 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical group [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 2
- 125000006738 (C6-C20) heteroaryl group Chemical group 0.000 description 1
- MFGOFGRYDNHJTA-UHFFFAOYSA-N 2-amino-1-(2-fluorophenyl)ethanol Chemical compound NCC(O)C1=CC=CC=C1F MFGOFGRYDNHJTA-UHFFFAOYSA-N 0.000 description 1
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 1
- ZKTVYRYOUVWCIA-UHFFFAOYSA-N 9h-carbazole;sodium Chemical group [Na].C1=CC=C2C3=CC=CC=C3NC2=C1 ZKTVYRYOUVWCIA-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000000861 blow drying Methods 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- HUCVOHYBFXVBRW-UHFFFAOYSA-M caesium hydroxide Inorganic materials [OH-].[Cs+] HUCVOHYBFXVBRW-UHFFFAOYSA-M 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910001502 inorganic halide Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D209/00—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
- C07D209/56—Ring systems containing three or more rings
- C07D209/80—[b, c]- or [b, d]-condensed
- C07D209/82—Carbazoles; Hydrogenated carbazoles
- C07D209/86—Carbazoles; Hydrogenated carbazoles with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to carbon atoms of the ring system
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D209/00—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
- C07D209/56—Ring systems containing three or more rings
- C07D209/80—[b, c]- or [b, d]-condensed
- C07D209/82—Carbazoles; Hydrogenated carbazoles
- C07D209/88—Carbazoles; Hydrogenated carbazoles with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to carbon atoms of the ring system
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
A solar cell is disclosed, comprising an organic layer containing at least one compound of formula I:
wherein A is + Is Li + 、K + 、Na + 、Rb + 、Cs + 、NH 4 + ，R 1 、R 2 Independently selected from hydrogen,One of halogen, alkyl, alkoxy, sulfonic group, alkenyl, alkynyl, aryl or heteroaryl, and n is more than or equal to 1. The application also provides a preparation method of the solar cell. The application also provides a preparation method of the solar cell. The application also provides a carbazole salt and derivatives thereof. According to the solar cell, the organic layer contains the compound shown in the formula I, the compound shown in the formula I is carbazole salt and derivatives thereof, and the carbazole salt and the derivatives thereof have high hole extraction performance, so that the defect of interface non-radiative recombination is reduced, phase separation is inhibited, the VOC loss of a device is reduced, and the efficiency of the device is improved.
Description
Technical Field
The application relates to the technical field of solar cells, in particular to carbazole salt and derivatives thereof and application of carbazole salt in preparation of solar cells.
Background
Organic-inorganic hybrid perovskite solar cells attract special photoelectric properties and are concerned, such as large light absorption coefficient, long free carrier diffusion length, bipolar property, high-concentration defect tolerance and the like. Therefore, its efficiency rapidly climbs from 3.8% in 2009 to over 25%. Perovskite solar cells are increasingly limited in efficiency and stability over time. This is mainly because many defects still exist on the surface of the perovskite, which are not effectively solved, and thus many problems exist in the device, such as serious VOC loss, large hysteresis, and poor stability.
Disclosure of Invention
In view of the above problems, the present application provides a solar cell, in which an organic layer contains a compound of formula I as shown below, the compound of formula I is a carbazole salt and a derivative thereof, and the carbazole salt and the derivative thereof have high hole extraction performance, reduce the interface non-radiative recombination defect, and inhibit phase separation, thereby reducing the VOC loss of the device and improving the device efficiency.
The present application provides a solar cell comprising an organic layer containing at least one compound of formula I:
wherein A is + Is Li + 、K + 、Na + 、Rb + 、Cs + 、NH 4 + Preferably Li + 、K + Or Cs + ；
R 1 、R 2 Independently selected from one of hydrogen, halogen, alkyl, alkoxy, sulfonic group, alkenyl, alkynyl, aryl or heteroaryl,
n≥1。
further, the compound of formula I is selected from one of the following structures:
further, the organic layer comprises a hole transport layer, an interface modification layer and a perovskite absorption layer which are sequentially stacked, and the interface modification layer contains the compound of the formula I.
Further, the hole transport layer is doped with the compound of formula I and/or the perovskite absorption layer is doped with the compound of formula I,
preferably, when the perovskite absorption layer is doped with the compound of the formula I, the doping concentration of the compound of the formula I is 0.01% -0.1%;
preferably, when the hole transport layer is doped with the compound of formula I, the doping concentration of the compound of formula I is 0.01% to 50%.
Further, the organic layer comprises a hole transport layer and a perovskite absorption layer which are arranged in a stacked mode, and at least one of the hole transport layer and the perovskite absorption layer is doped with the compound of the formula I, and preferably, the doping concentration of the compound of the formula I is 0.01% -50%.
Further, the hole transport material of the hole transport layer is selected from a molybdenum oxide layer, a [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine ] (PTAA) layer, a copper iodide layer, a 2,2', 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene) layer, a PEDOT: PSS layer, a P3HT layer, a P3OHT layer, a P3ODDT layer, a NiOx layer, or a CuSCN layer; preferably one of KX3-3 ([ 2- (3, 6-dimethoxy-9H-carbazol-9-yl) ethyl ] phosphonic acid), PTAA (poly [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine ]) or NiOx.
Further, the perovskite material of the perovskite absorption layer has a chemical general formula AB (X) n Y 1-n ) 3 Wherein A is selected from CH 3 NH 3 、C 4 H 9 NH 3 、NH 2 ＝CHNH 2 Or one or more of alkali metals; b is selected from divalent metal ions of Pb or Sn; x and Y are both halogen, and X and Y are different; n is 1, 2 or 3.
Further, the surface of the hole transport layer facing away from the perovskite absorption layer is laminated with a substrate.
Furthermore, the substrate is a battery substrate or a crystalline silicon bottom battery.
Further, the crystalline silicon bottom battery is selected from one of a PERC battery, a TOPCon battery, an HJT battery, an IBC battery or an HBC battery.
The application provides a preparation method of a solar cell, which is characterized by comprising the following steps:
providing a substrate;
preparing an organic layer on one side surface of the substrate;
the organic layer contains at least one compound of formula I.
Further, a solution containing the compound of formula I is mixed with a solvent to obtain a mixed solution, and the mixed solution is applied to a substrate to obtain an organic layer, preferably, the solvent is ethanol, n-propanol, isopropanol or 2-methoxyethanol.
The application provides a carbazole salt and a derivative thereof, and the structure of the carbazole salt is shown as the following formula I:
wherein A is + Is Li + 、K + 、Na + 、Rb + 、Cs + 、NH 4 + Preferably Li + 、K + Or Cs + ；
R 1 、R 2 Independently selected from one of hydrogen, halogen, alkyl, alkoxy, sulfonic group, alkenyl, alkynyl, aryl or heteroaryl,
n≥1。
further, the carbazole salt and the derivative thereof are selected from one of the following structures:
the application provides application of carbazole salt and derivatives thereof in photoelectric devices.
According to the solar cell provided by the application, the compound shown in the formula I is introduced into the organic layer, wherein the compound shown in the formula I is carbazole salt and derivatives thereof, has high hole extraction performance, can reduce interface non-radiative recombination defects, and inhibits phase separation, so that the VOC loss of a device is reduced, and the device efficiency is improved. The ions A in the compound of the formula I are alkali metal ions such as lithium ions, potassium ions, sodium ions, rubidium ions and cesium ions, and can gradually permeate into perovskite lattices to reduce vacancy defects, and a certain inhibition effect on ion migration is possibly achieved, so that the retardation of a perovskite solar cell device is inhibited, and the stability is improved. R in the Compounds of formula I 1 And R 2 Can passivate interface defects for groups such as alkane, methoxy, ethoxy, ammonium salt, sulfonate and the like, reduces interface potential barrier, and enhances the transmission of hole carriers, thereby improving the performance of the device.
Drawings
The drawings are included to provide a further understanding of the application and are not to be construed as limiting the application. Wherein:
fig. 1 is a schematic structural diagram of a single-layer solar cell provided in the present application.
Fig. 2 is a schematic structural diagram of a tandem solar cell provided in the present application.
Description of the reference numerals
1-substrate, 2-first transparent conducting layer, 3-hole transport layer, 4-interface modification layer, 5-perovskite absorption layer, 6-electron blocking/passivation layer, 7-electron transport layer, 8-buffer layer, 9-second transparent conducting layer and 10-back electrode.
Detailed Description
The following description of exemplary embodiments of the present application is provided to facilitate the understanding of the various details of the embodiments of the present application and are to be considered exemplary only. Accordingly, those of ordinary skill in the art will recognize that various changes and modifications of the embodiments described herein can be made without departing from the scope and spirit of the present application. Also, descriptions of well-known functions and constructions are omitted in the following description for clarity and conciseness. The upper and lower positions in the present application depend on the incident direction of the light, and the incident position of the light is the upper position.
The application provides a solar cell, which comprises an organic layer, wherein the organic layer contains at least one compound shown as a formula I:
wherein A is + Is Li + 、K + 、Na + 、Rb + 、Cs + 、NH 4 + Preferably K + 、Na + Or Cs + ；
R 1 、R 2 Independently selected from hydrogen, halogen (F, cl, br, I), alkyl (alkyl with carbon number of C1-C10), alkoxy (alkoxy with carbon number of C1-C10, preferably methoxy, ethoxy, etc.), sulfonic acid group, alkenyl (alkenyl with carbon number of C1-C10), alkynyl (alkynyl with C number of C1-C10), aryl (aryl with C number of C6-C20) or heteroaryl (alkyl with C number of C6-C20)C6-C20 heteroaryl),
the compound of formula I can be a small molecule compound, oligomer or polymer, so n is more than or equal to 1, n can be 1-1000, for example, n can be 1, 2, 3, 4, 5, 6, 7, 8, 9, etc., and the value of n can be determined according to actual needs.
Specifically, R 1 、R 2 May be the same or different.
Specifically, when A + Is Li + When R is 1 、R 2 Independently selected from one of hydrogen, halogen, alkyl, alkoxy, sulfonic group, alkenyl, alkynyl, aryl or heteroaryl, and n is more than or equal to 1.
Specifically, when A + Is K + When R is 1 、R 2 Independently selected from one of hydrogen, halogen, alkyl, alkoxy, sulfonic group, alkenyl, alkynyl, aryl or heteroaryl, and n is more than or equal to 1.
Specifically, when A + Is Na + When R is 1 、R 2 Independently selected from one of hydrogen, halogen, alkyl, alkoxy, sulfonic group, alkenyl, alkynyl, aryl or heteroaryl, and n is more than or equal to 1.
Specifically, when A + Is Rb + When R is 1 、R 2 Independently selected from one of hydrogen, halogen, alkyl, alkoxy, sulfonic group, alkenyl, alkynyl, aryl or heteroaryl, and n is more than or equal to 1.
Specifically, when A + Is Cs + When R is 1 、R 2 Independently selected from one of hydrogen, halogen, alkyl, alkoxy, sulfonic group, alkenyl, alkynyl, aryl or heteroaryl, and n is more than or equal to 1.
Specifically, when A + Is NH 4 + When R is 1 、R 2 Independently selected from one of hydrogen, halogen, alkyl, alkoxy, sulfonic group, alkenyl, alkynyl, aryl or heteroaryl, and n is more than or equal to 1.
The solar cell provided by the application introduces the compound shown in the formula I into the organic layer, wherein the compound shown in the formula I is carbazole salt and derivatives thereof, has high hole extraction performance, and can reduce interface non-radiative recombination defectsPhase separation is suppressed, thereby reducing VOC loss of the device and improving device efficiency. The ions A in the compound of the formula I are alkali metal ions such as lithium ions, potassium ions, sodium ions, rubidium ions and cesium ions, and the like, can gradually permeate into perovskite lattices to reduce vacancy defects, and possibly have a certain inhibition effect on ion migration, so that the retardation of perovskite solar cell devices is inhibited, and the stability is improved. R in the compounds of the formula I 1 And R 2 The compound can be alkane, methoxy, ethoxy, ammonium salt, sulfonate, polymer and other groups, can passivate interface defects, reduce interface potential barriers, and enhance the transmission of hole carriers, thereby improving the performance of the device.
In the present application, the compound of formula I is selected from one of the following structures:
in the present application, the organic layer includes a hole transport layer 3, an interface modification layer 4 and a perovskite absorption layer 5, which are sequentially stacked, and the interface modification layer 4 contains the compound of formula I.
In one embodiment, as shown in fig. 1a, the solar cell includes a substrate 1, a hole transport layer 3, an interface modification layer 4, a perovskite absorption layer 5, an electron transport layer 7, a buffer layer 8, a second transparent conductive layer 9, and a back electrode 10, which are sequentially stacked.
Specifically, a first transparent conductive layer 2 may also be disposed between the substrate 1 and the hole transport layer 3. An electron blocking/passivation layer 6 may also be disposed between the perovskite absorption layer 5 and the electron transport layer 7.
Specifically, in the solar cell shown in fig. 1a, only the interface modification layer 4 contains the compound of formula I, and the other layers do not contain the compound of formula I. The interface modifying layer 4 is formed from a compound of formula I.
Specifically, the interface modification layer 4 is prepared by mixing the compound of formula I and a solvent.
The solvent is one of ethanol, normal propyl alcohol, isopropanol and 2-methoxy ethanol.
In the present application, the hole transport layer 3 is doped with the compound of formula I and/or the perovskite absorption layer 5 is doped with the compound of formula I.
In one embodiment, as shown in fig. 1d, the solar cell includes a substrate 1, a hole transport layer 3, an interface modification layer 4, a perovskite absorption layer 5, an electron transport layer 7, a buffer layer 8, a second transparent conductive layer 9, and a back electrode 10, which are sequentially stacked.
Specifically, a first transparent conductive layer 2 may also be disposed between the substrate 1 and the hole transport layer 3. An electron blocking/passivation layer 6 may also be disposed between the perovskite absorption layer 5 and the electron transport layer 7.
Specifically, in the solar cell shown in fig. 1d, only the interface modification layer 4 and the hole transport layer 3 contain the compound of formula I, and the other layers do not contain the compound of formula I. In the hole transport layer 3, the compounds of the formula I are homogeneously doped. The interface modifying layer 4 is formed from a compound of formula I.
In the hole transport layer 3, the doping concentration of the compound of formula I is 0.01% to 50%, for example, may be 0.01%, 0.02%, 0.03%, 0.04%, 0.05%, 0.06%, 0.07%, 0.08%, 0.09%, 0.1%, 0.2%, 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19%, 20%, 21%, 22%, 23%, 24%, 25%, 26%, 27%, 28%, 29%, 30%, 31%, 32%, 33%, 34%, 35%, 36%, 37%, 38%, 39%, 40%, 41%, 42%, 43%, 44%, 45%, 46%, 47%, 48%, 49% or 50%.
In one embodiment, as shown in fig. 1e, the solar cell includes a substrate 1, a hole transport layer 3, an interface modification layer 4, a perovskite absorption layer 5, an electron transport layer 7, a buffer layer 8, a second transparent conductive layer 9, and a back electrode 10, which are sequentially stacked.
Specifically, a first transparent conductive layer 2 may also be disposed between the substrate 1 and the hole transport layer 3. An electron blocking/passivation layer 6 may also be disposed between the perovskite absorption layer 5 and the electron transport layer 7.
Specifically, in the solar cell shown in fig. 1e, only the interface modification layer 4 and the perovskite absorption layer 5 contain the compound of formula I, and the other layers do not contain the compound of formula I. In the perovskite absorption layer 5, the compound of formula I is located at the grain boundaries of the perovskite crystals. The interface modifying layer 4 is formed from a compound of formula I.
In the perovskite absorption layer 5, the doping concentration of the compound of formula I is 0.01% to 0.1%, and may be, for example, 0.01%, 0.02%, 0.03%, 0.04%, 0.05%, 0.06%, 0.07%, 0.08%, 0.09%, or 0.1%.
In one embodiment, the solar cell includes a substrate 1, a hole transport layer 3, an interface modification layer 4, a perovskite absorption layer 5, an electron transport layer 7, a buffer layer 8, a second transparent conductive layer 9, and a back electrode 10, which are sequentially stacked.
Specifically, a first transparent conductive layer 2 may also be disposed between the substrate 1 and the hole transport layer 3. An electron blocking/passivation layer 6 may also be disposed between the perovskite absorption layer 5 and the electron transport layer 7.
Specifically, in the solar cell of this embodiment, the hole transport layer 3, the interface modification layer 4, and the perovskite absorption layer 5 all contain the compound of formula I, and the other layers do not contain the compound of formula I. In the hole transport layer 3, the compounds of the formula I are homogeneously doped. In the perovskite absorption layer 5, the compound of formula I is located at the grain boundaries of the perovskite crystals. The interface-modifying layer 4 is formed from a compound of formula I.
In the perovskite absorption layer 5, the doping concentration of the compound of formula I is 0.01% to 0.1%, and may be, for example, 0.01%, 0.02%, 0.03%, 0.04%, 0.05%, 0.06%, 0.07%, 0.08%, 0.09%, or 0.1%.
In the hole transport layer 3, the doping concentration of the compound of formula I is 0.01% to 50%, for example, may be 0.01%, 0.02%, 0.03%, 0.04%, 0.05%, 0.06%, 0.07%, 0.08%, 0.09%, 0.1%, 0.2%, 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19%, 20%, 21%, 22%, 23%, 24%, 25%, 26%, 27%, 28%, 29%, 30%, 31%, 32%, 33%, 34%, 35%, 36%, 37%, 38%, 39%, 40%, 41%, 42%, 43%, 44%, 45%, 46%, 47%, 48%, 49% or 50%.
In the present application, the organic layer comprises a hole transport layer 3 and a perovskite absorption layer 5 which are stacked, and at least one of the hole transport layer 3 and the perovskite absorption layer 5 is doped with the compound of formula I.
In one embodiment, as shown in fig. 1c, the solar cell includes a substrate 1, a hole transport layer 3, a perovskite absorption layer 5, an electron transport layer 7, a buffer layer 8, a second transparent conductive layer 9, and a back electrode 10, which are sequentially stacked.
Specifically, a first transparent conductive layer 2 may also be disposed between the substrate 1 and the hole transport layer 3. An electron blocking/passivation layer 6 may also be disposed between the perovskite absorption layer 5 and the electron transport layer 7.
The hole transport layer 3 contains a compound of formula I, and the other layers do not contain a compound of formula I. In the hole transport layer 3, the compounds of the formula I are homogeneously doped.
In the hole transport layer 3, the doping concentration of the compound of formula I is 0.01% to 50%, for example, may be 0.01%, 0.02%, 0.03%, 0.04%, 0.05%, 0.06%, 0.07%, 0.08%, 0.09%, 0.1%, 0.2%, 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19%, 20%, 21%, 22%, 23%, 24%, 25%, 26%, 27%, 28%, 29%, 30%, 31%, 32%, 33%, 34%, 35%, 36%, 37%, 38%, 39%, 40%, 41%, 42%, 43%, 44%, 45%, 46%, 47%, 48%, 49% or 50%.
In one embodiment, as shown in fig. 1b, the solar cell includes a substrate 1, a hole transport layer 3, a perovskite absorption layer 5, an electron transport layer 7, a buffer layer 8, a second transparent conductive layer 9, and a back electrode 10, which are sequentially stacked.
Specifically, a first transparent conductive layer 2 may also be disposed between the substrate 1 and the hole transport layer 3. An electron blocking/passivation layer 6 may also be disposed between the perovskite absorption layer 5 and the electron transport layer 7.
The perovskite absorption layer 5 contains the compound of the formula I, and the other layers do not contain the compound of the formula I. In the perovskite absorption layer 5, the compound of formula I is located at the grain boundaries of the perovskite crystals.
In the perovskite absorption layer 5, the doping concentration of the compound of formula I is 0.01% to 0.1%, and may be, for example, 0.01%, 0.02%, 0.03%, 0.04%, 0.05%, 0.06%, 0.07%, 0.08%, 0.09%, or 0.1%.
In one embodiment, the solar cell includes a substrate 1, a hole transport layer 3, an interface modification layer 4, a perovskite absorption layer 5, an electron transport layer 7, a buffer layer 8, a second transparent conductive layer 9, and a back electrode 10, which are sequentially stacked.
Specifically, a first transparent conductive layer 2 may also be disposed between the substrate 1 and the hole transport layer 3. An electron blocking/passivation layer 6 may also be provided between the perovskite absorption layer 5 and the electron transport layer 7.
Specifically, in the solar cell of this embodiment, the compound of formula I is contained in both the hole transport layer 3 and the perovskite absorption layer 5, and the compound of formula I is not contained in the other layers. In the hole transport layer 3, the compounds of the formula I are homogeneously doped. In the perovskite absorption layer 5, the compound of formula I is located at the grain boundaries of the perovskite crystals.
In the perovskite absorption layer 5, the doping concentration of the compound of formula I is 0.01% to 0.1%, and may be, for example, 0.01%, 0.02%, 0.03%, 0.04%, 0.05%, 0.06%, 0.07%, 0.08%, 0.09%, or 0.1%.
In the hole transport layer 3, the doping concentration of the compound of formula I is 0.01% to 50%, for example, may be 0.01%, 0.02%, 0.03%, 0.04%, 0.05%, 0.06%, 0.07%, 0.08%, 0.09%, 0.1%, 0.2%, 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19%, 20%, 21%, 22%, 23%, 24%, 25%, 26%, 27%, 28%, 29%, 30%, 31%, 32%, 33%, 34%, 35%, 36%, 37%, 38%, 39%, 40%, 41%, 42%, 43%, 44%, 45%, 46%, 47%, 48%, 49% or 50%.
In the present application, the hole transport material of the hole transport layer 3 is selected from a molybdenum oxide layer, a [ bis (4-phenyl) (2,4,6-trimethylphenyl) amine ] (PTAA) layer, a copper iodide layer, a 2,2',7,7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene) layer, a PEDOT: PSS layer, a P3HT layer, a P3OHT layer, a P3ODDT layer, a NiOx layer or a CuSCN layer; preferably one of KX3-3 ([ 2- (3, 6-dimethoxy-9H-carbazol-9-yl) ethyl ] phosphonic acid), PTAA (poly [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine ]) or NiOx. Including but not limited to. The thickness is 10-150nm, and may be, for example, 10nm, 20nm, 30nm, 40nm, 45nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm or 150nm.
In the present application, the perovskite absorption layer 5 may be an organic-inorganic hybrid halide perovskite layer, an all-inorganic halide perovskite layer, a lead-free perovskite layer, or the like, including but not limited thereto; the perovskite material of the perovskite absorption layer has a chemical general formula AB (X) n Y 1-n ) 3 Wherein A is selected from CH 3 NH 3 、C 4 H 9 NH 3 、NH 2 ＝CHNH 2 Or one or more of alkali metals; b is selected from divalent metal ions of Pb or Sn; x and Y are both halogen, and X and Y are different; n is 1, 2 or 3. The thickness is 300-600nm, such as 300nm, 310nm, 320nm, 330nm, 340nm, 350nm, 36 nm0nm, 370nm, 380nm, 390nm, 400nm, 410nm, 420nm, 430nm, 440nm, 450nm, 460nm, 470nm, 480nm, 490nm, 500nm, 510nm, 520nm, 530nm, 540nm, 550nm, 560nm, 570nm, 580nm, 590nm or 600nm.
In the present application, the substrate 1 is a battery substrate or a crystalline silicon bottom battery.
Specifically, the crystalline silicon bottom cell is selected from one of a PERC cell, a TOPCon cell, an HJT cell, an IBC cell or an HBC cell.
Specifically, when the substrate 1 is a cell substrate, the solar cell is a single-layer solar cell, and the cell substrate is an organic polymer transparent substrate such as transparent glass, polyethylene terephthalate (PET), polyimide (PI), and the like, and is preferably transparent glass.
Specifically, when the substrate 1 is a bottom cell, the solar cell is a tandem solar cell.
In particular, the bottom cell may be a silicon-based cell.
Specifically, the first transparent conductive layer 2 and the second transparent conductive layer 9 may be an ITO layer, an FTO layer, an IZO layer, an IWO layer, an AZO layer, or a ZTO layer, wherein the thickness of the first transparent conductive layer is 5-30nm, for example, 5nm, 10nm, 20nm, or 30nm; the second transparent conductive layer has a thickness of 50-150nm, such as 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, or 130nm.
The electron transport layer 7 may be a titanium oxide layer, a tin oxide layer, a C60 layer or a C60-PCBM layer, [60 ]]PCBM([6,6]-phenyl-C 61 butyl acid methyl ester, chinese name [6,6]-phenyl-C 61 -iso-methyl butyrate) layer, [70 []PCBM([6,6]-Phenyl-C 71 -butyl acid methyl ester, chinese name [6,6]-phenyl-C 71 -butyric acid isopropyl ester) layer, bis [60 ]]PCB(Bis(1-[3-(methoxycarbonyl)propyl]-1-phenyl)-[6,6]C 62 ) Layer, [60 ]]ICBA(1',1”,4',4”-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2',3',56,60:2”,3”][5,6]full arene-C60) layer, and the like, including but not limited to these, as long as the functions in the present application are achieved. The thickness is 10-20nm, such as 10nm, 11nm, 12nmnm, 13nm, 14nm, 15nm, 16nm, 17nm, 18nm, 19nm or 20nm.
The electron blocking/passivation layer 6 is typically LiF, al 2 O 3 Etc., preferably LiF, including but not limited thereto, as long as the functions in the present application can be achieved. The thickness is 1-10nm, and may be, for example, 1nm, 2nm, 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm or 10nm.
The buffer layer 8, typically SnO 2 、ZnO 2 Etc., preferably SnO 2 Including but not limited to, as long as the functions in the present application are achieved. The thickness is 10-20nm, and may be, for example, 10nm, 11nm, 12nm, 13nm, 14nm, 15nm, 16nm, 17nm, 18nm, 19nm or 20nm.
The back electrode 10 is a metal electrode applied to the perovskite solar cell, and is generally Au, ag, C, cu, or the like, preferably Ag, including but not limited thereto, as long as the function in the present application can be achieved. The thickness is 10-400nm.
The application provides a preparation method of a solar cell, which comprises the following steps:
the method comprises the following steps: providing a substrate 1;
specifically, the base 1 is a battery substrate or a bottom battery.
A first transparent conductive layer 2 is deposited on the cell substrate or bottom cell.
Step two: preparing an organic layer on one side surface of the substrate 1;
step 2.1: and a hole transport layer 3 is formed on the surface of one side, away from the substrate 1, of the first transparent conductive layer 2.
The hole transport layer 3 may be doped with the compound of formula I or not doped with the compound of formula I.
Step 2.2: and forming an interface modification layer 4 on the surface of the hole transport layer 3, which is far away from the first transparent conductive layer 2, by using the compound shown in the formula I.
Step 2.2 may be absent.
Step 2.3: and forming a perovskite absorption layer 5 on the surface of one side of the interface modification layer 4, which is far away from the hole transport layer 3.
When the interface modification layer 4 is not present, the perovskite absorption layer 5 is stacked on the hole transport layer 3.
The perovskite absorption layer 5 may be doped with the compound of formula I or not doped with the compound of formula I.
The compound of the formula I is
Wherein A is + Is Li + 、K + 、Na + 、Rb + 、Cs + 、NH 4 + ，
R 1 、R 2 Independently selected from one of hydrogen, halogen, alkyl, alkoxy, sulfonic group, alkenyl, alkynyl, aryl or heteroaryl,
n≥1。
step three: an electron blocking/passivation layer 6 is formed on the surface of the perovskite absorption layer 5 on the side facing away from the hole transport layer 3.
Step four: an electron transport layer 7 is formed on the surface of the electron blocking/passivation layer 6 on the side facing away from the perovskite absorption layer 5.
Step five: a buffer layer 8 is formed on the surface of the electron transport layer 7 on the side facing away from the electron blocking/passivation layer 6.
Step six: a second transparent conductive layer 9 is formed on the surface of the buffer layer 8 on the side facing away from the electron transport layer 7.
Step seven: a back electrode 10 is formed on a surface of the second transparent conductive layer 9 facing away from the buffer layer 8.
The solar cell prepared by the above method is the above solar cell, and for the substrate 1, the first transparent conductive layer 2, the hole transport layer 3, the interface modification layer 4, the perovskite absorption layer 5, the electron transport layer 7, the buffer layer 8, the second transparent conductive layer 9 and the back electrode 10, the description can be made with reference to the substrate 1, the first transparent conductive layer 2, the hole transport layer 3, the interface modification layer 4, the perovskite absorption layer 5, the electron transport layer 7, the buffer layer 8, the second transparent conductive layer 9 and the back electrode 10.
The present application also provides a carbazole salt and derivatives thereof, which have the following structure formula I:
wherein A is + Is Li + 、K + 、Na + 、Rb + 、Cs + 、NH 4 + ，
R 1 、R 2 Independently selected from one of hydrogen, halogen, alkyl, alkoxy, sulfonic group, alkenyl, alkynyl, aryl or heteroaryl,
n≥1。
the carbazole salt and the derivative thereof are the compounds shown in the formula I, and the compounds shown in the formula I can be referred to for specific description.
The application also provides a preparation method of the carbazole salt and the derivatives thereof, which comprises the following steps:
the method comprises the following steps: mixing carbazole/carbazole derivatives, alkali metal hydroxide and xylene, heating and boiling to obtain a steam-like azeotropic mixture;
step two: condensing the vaporous azeotropic mixture;
step three: separating water, introducing the water into a water receiver, reacting for a period of time, and after the reaction is stopped, filtering, separating and drying the carbazole salt and the derivatives thereof dispersed in the xylene to obtain the carbazole salt and the derivatives thereof.
The alkali metal hydroxide may be sodium hydroxide, potassium hydroxide, cesium hydroxide, or the like.
Specifically, 1mol of carbazole derivative
56g (1 mol) of potassium hydroxide powder and 700mL of xylene were charged into a 2L-sized four-necked flask equipped with a thermometer, a water receiver and a stirrer and heated to boil; condensing the obtained steam-like azeotropic mixture, separating water and introducing the water into a water receiver to recover water; the reaction was stopped after about 15 h; will be dispersed in xyleneThe carbazole potassium salt derivative is filtered, separated and dried to obtain the carbazole potassium salt derivative>
Specifically, 167g (1 mol) of carbazole, 56g (1 mol) of potassium hydroxide powder, and 700mL of xylene were charged into a 2L-sized four-necked flask equipped with a thermometer, a water receiver, and a stirrer and heated to boiling; condensing the obtained steam-like azeotropic mixture, separating water and introducing into a water receiver; after about 15h, 18mL of water is recovered, and the reaction is stopped; the carbazole potassium salt dispersed in xylene was filtered, separated and dried to obtain 190g of carbazole potassium in the form of pale yellow crystals.
The application also provides an application of the carbazole salt and the derivative thereof in photoelectric devices, wherein the photoelectric devices are solar cells, OLED devices and the like.
Examples
The experimental methods used in the following examples are all conventional methods, unless otherwise specified.
Materials, reagents and the like used in the following examples are commercially available unless otherwise specified.
Example 1
The solar cell in this embodiment is shown in fig. 1a, and the preparation method thereof includes the following steps:
the method comprises the following steps: providing transparent glass as a cell substrate, depositing an ITO layer with the thickness of 180nm on one side surface of the cell substrate, wherein the sheet resistance of the ITO layer is 10 omega/sq, and then cutting the glass substrate deposited with the ITO layer into 2 multiplied by 2cm 2 And sequentially ultrasonically cleaning the steel plate by using acetone, deionized water and ethanol, and blow-drying the steel plate by using nitrogen flow.
Step two: preparation of the organic layer
Step 2.1: spin-coating a 2-methoxy ethanol solution of KX3-3 on the surface of one side, away from the battery substrate, of the ITO layer, and immediately placing the ITO layer on a hot table to heat for 10min at 100 ℃ after the spin-coating is finished; thereby forming a hole transport layer having a thickness of 30nm.
Step 2.2: 60 mu L of 0.7mg/mL potassium carbazole solution (the solvent in the potassium carbazole solution is 2-methoxyethanol) is sucked by using a liquid-transferring gun and spin-coated on the surface of one side, away from the ITO layer, of the hole transport layer, the spin-coating is carried out for 30s at the rotating speed of 3000rpm, and after the spin-coating is finished, no treatment is needed, so that an interface modification layer is formed, and the thickness of the interface modification layer is 30nm.
Step 2.3: and preparing a perovskite light absorption layer on the surface of one side of the interface modification layer, which is far away from the hole transport layer, by adopting a one-step method.
Specifically, a perovskite precursor solution is spin-coated on the surface of one side, away from the hole transport layer, of the interface modification layer, and the perovskite precursor contains Cs as a component 0.05 (FA 0.77 MA 0.23 ) 0.95 Pb(I 0.77 Br 0.23 ) 3 The precursor solution is PbI 2 /PbBr 2 The solvent is a mixed solvent of DMF, DMSO =4 and 1, and the perovskite absorption layer is formed by immediately placing on a hot bench and heating at 120 ℃ for 20min after the spin coating is finished, wherein the thickness of the perovskite absorption layer is 600nm.
Step three: and evaporating LiF on the surface of one side, which is far away from the interface modification layer, of the perovskite absorption layer by using an evaporation device, so that an electron blocking/passivation layer is formed, and the thickness of the electron blocking/passivation layer is 1nm.
Step four: c60 is evaporated on the surface of the electron blocking/passivation layer on the side facing away from the perovskite absorption layer using an evaporation apparatus, thereby forming an electron transport layer having a thickness of 15nm.
Step five: forming SnO on the surface of one side of the electron transport layer, which is far away from the electron blocking/passivating layer, by using an atomic vacuum deposition system 2 And the thickness of the buffer layer is 15nm.
Step six: using a Physical Vapor Deposition (PVD) system in said SnO 2 And preparing an ITO transparent conducting layer on the surface of one side of the buffer layer, which is far away from the electron transmission layer, wherein the thickness of the ITO transparent conducting layer is 100nm.
Step seven: at the position of the ITO transparent conductive layer away from the SnO 2 An Ag electrode was formed on one surface of the buffer layer and had a thickness of 400nm.
The performance of the solar cell in this embodiment is shown in table 1.
Example 2
As shown in fig. 1d, the solar cell in this embodiment is different from the solar cell in example 1 in the hole transport layer in the organic layer, and the method for preparing the hole transport layer in this embodiment is as follows:
step 2.1: and spin-coating a 2-methoxy ethanol solution of KX3-3 and carbazole potassium on the surface of one side of the ITO layer, which is far away from the battery substrate, wherein the concentrations of KX3-3 and carbazole potassium in the solution are both 0.7mg/mL, immediately placing the ITO layer on a hot table after the spin-coating, and heating the ITO layer for 10min at 100 ℃, so that a hole transport layer containing carbazole potassium is formed, and the thickness of the hole transport layer is 30nm.
The performance of the solar cell in this embodiment is shown in table 1.
Example 3
The solar cell of this embodiment, as shown in fig. 1e, differs from the solar cell of example 1 in the perovskite absorption layer in the organic layer, and the perovskite absorption layer of this embodiment is prepared as follows:
step 2.3: and preparing a perovskite light absorption layer on the surface of one side of the interface modification layer, which is far away from the hole transmission layer, by adopting a one-step method.
Specifically, a perovskite precursor solution added with carbazole potassium is spin-coated on the surface of one side, away from the hole transport layer, of the interface modification layer, and the perovskite precursor solution contains Cs 0.05 (FA 0.77 MA 0.23 ) 0.95 Pb(I 0.77 Br 0.23 ) 3 The precursor solution is PbI 2 /PbBr 2 The perovskite/MABr/CsI composite material is characterized by comprising the following components in parts by weight, wherein the solvent is a mixed solvent of DMF (dimethyl formamide) and DMSO = 41, the molar percentage of the added carbazole potassium is 0.05% based on perovskite and carbazole potassium, and after the spin coating is finished, the perovskite absorption layer containing carbazole potassium is formed by immediately placing the perovskite absorption layer on a hot bench and heating the perovskite absorption layer at 120 ℃ for 20min, and the thickness of the perovskite absorption layer is 600nm.
The performance of the solar cell in this embodiment is shown in table 1.
Example 4
The solar cell in this embodiment is different from the solar cell in example 2 in that the organic layer does not have an interface modification layer, as shown in fig. 1 c.
The performance of the solar cell in this embodiment is shown in table 1.
Example 5
The solar cell in this embodiment is different from the solar cell in example 3 in that the organic layer does not have an interface modification layer, as shown in fig. 1 b.
The performance of the solar cell in this embodiment is shown in table 1.
Example 6
The solar cell in this embodiment is shown in fig. 2, and the difference between the solar cell and the embodiment 1 is the following first step: an SHJ single junction cell is provided, an ITO transparent conductive layer is deposited on one side surface of the SHJ single junction cell by using a Physical Vapor Deposition (PVD) system, the sheet resistance of the ITO transparent conductive layer is 40 omega/sq, and the thickness of the ITO transparent conductive layer is 20nm.
The performance of the solar cell in this embodiment is shown in table 1.
Example 7
The solar cell in this embodiment mode is different from that in example 1 in that potassium carbazole in the organic layer is replaced with sodium carbazole.
The performance of the solar cell in this embodiment is shown in table 1.
Example 8
The solar cell in this embodiment mode differs from that in example 1 in that potassium carbazole in the organic layer is replaced with cesium carbazole.
The performance of the solar cell in this embodiment is shown in table 1.
Comparative example 1
The solar cell of comparative example 1 is different from the solar cell of example 1 in that the interface modification layer is not provided, and the performance of the solar cell in this embodiment is shown in table 1.
Table 1 shows the performance parameters of the solar cells of each example and comparative example
And (3) knotting: when the hole transport layer contains carbazole salt and derivatives thereof, the hole transport layer generates chemical reaction to form SAM monomolecular layer when growing on the lower transparent conductive oxide, but because the methoxy group on the structure of the hole transport layer can bring steric hindrance effect to hinder the quality and coverage rate of the monomolecular layer film, when introducing the carbazole salt, the solar cell can promote the film quality of KX3-3, reduce the recombination center and promote the device V OC (ii) a When the material has an interface, on one hand, the coverage rate is improved, on the other hand, alkali metal salt or other functional group molecules in the material can perform chemical reaction with perovskite, so that the problems of lower interface defects and ion migration of perovskite are solved, the quality of perovskite is improved, the vertical oriented growth of perovskite is facilitated, and the extraction of current carriers is improved; when the material is directly added into a perovskite precursor solution, the material plays a role of delaying crystallization during the growth of perovskite crystals, is beneficial to the growth of crystal grains and reduces crystal boundaries, thereby improving the film quality of the perovskite, and finally improving the performance of a device, especially V OC And a PCE.
Although the embodiments of the present application have been described above with reference to the accompanying drawings, the present application is not limited to the above-described embodiments and fields of application, and the above-described embodiments are merely illustrative, instructive, and not restrictive. Those skilled in the art, having the benefit of this disclosure, may effect numerous modifications thereto and changes may be made without departing from the scope of the invention as defined by the appended claims.
Claims (15)
1. A solar cell comprising an organic layer, said organic layer comprising at least one compound of formula I:
wherein A is + Is Li + 、K + 、Na + 、Rb + 、Cs + 、NH 4 + Preferably Li + 、K + Or Cs + ；
R 1 、R 2 Independently selected from one of hydrogen, halogen, alkyl, alkoxy, sulfonic group, alkenyl, alkynyl, aryl or heteroaryl,
n≥1。
2. the solar cell according to claim 1, wherein the compound of formula I is selected from one of the following structures:
3. the solar cell according to claim 1 or 2, wherein the organic layer comprises a hole transport layer, an interface modification layer and a perovskite absorption layer, which are sequentially stacked, and the compound of formula I is contained in the interface modification layer.
4. The solar cell according to claim 3, characterized in that the hole transport layer is doped with the compound of formula I and/or the perovskite absorption layer is doped with the compound of formula I,
preferably, when the perovskite absorption layer is doped with the compound of the formula I, the doping concentration of the compound of the formula I is 0.01% -0.1%;
preferably, when the compound of formula I is doped in the hole transport layer, the doping concentration of the compound of formula I is 0.01% to 50%.
5. The solar cell according to claim 1 or 2, wherein the organic layer comprises a hole transport layer and a perovskite absorption layer which are stacked, and at least one of the hole transport layer and the perovskite absorption layer is doped with the compound of formula I, preferably, the doping concentration of the compound of formula I is 0.01-50%.
6. Solar cell according to claim 4 or 5, characterized in that the hole transport material of the hole transport layer is selected from molybdenum oxide layers, [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine ]
A (PTAA) layer, a copper iodide layer, a 2,2', 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene) layer, a PEDOT: PSS layer, a P3HT layer, a P3OHT layer, a P3ODDT layer, a NiOx layer or a CuSCN layer; preferably one of KX3-3 ([ 2- (3, 6-dimethoxy-9H-carbazol-9-yl) ethyl ] phosphonic acid), PTAA (poly [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine ]) or NiOx.
7. The solar cell according to claim 4 or 5, characterized in that the perovskite material of the perovskite absorption layer has the general chemical formula AB (X) n Y 1-n ) 3 Wherein A is selected from CH 3 NH 3 、C 4 H 9 NH 3 、NH 2 ＝CHNH 2 Or one or more of alkali metals; b is selected from divalent metal ions of Pb or Sn; x and Y are halogen, and X and Y are different; n is 1, 2 or 3.
8. The solar cell according to any of claims 3 to 7, characterized in that the surface of the hole transport layer facing away from the perovskite absorption layer is laminated with a substrate.
9. The solar cell of claim 8, wherein the substrate is a cell substrate or a crystalline silicon based cell.
10. The solar cell of claim 9, wherein the crystalline silicon bottom cell is selected from one of a PERC cell, a TOPCon cell, an HJT cell, an IBC cell, or an HBC cell.
11. A method for manufacturing a solar cell according to any one of claims 1 to 10, comprising the steps of:
providing a substrate;
preparing an organic layer on one side surface of the substrate;
the organic layer contains at least one compound of formula I.
12. The method according to claim 11, wherein the solution containing the compound of formula I is mixed with a solvent to obtain a mixture, and the mixture is applied to a substrate to obtain an organic layer, preferably wherein the solvent is ethanol, n-propanol, isopropanol or 2-methoxyethanol.
13. A carbazole salt and derivatives thereof are characterized in that the structure thereof is as shown in the following formula I:
wherein A is + Is Li + 、K + 、Na + 、Rb + 、Cs + 、NH 4 + Is preferably K + 、Na + Or Cs + ；
R 1 、R 2 Independently selected from one of hydrogen, halogen, alkyl, alkoxy, sulfonic group, alkenyl, alkynyl, aryl or heteroaryl,
n≥1。
14. the carbazole salt and derivatives thereof according to claim 13, wherein the carbazole salt and derivatives thereof are selected from one of the following structures:
15. use of the carbazole salt and derivatives thereof according to claim 13 or 14 in optoelectronic devices.
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| PCT/CN2023/114273 WO2024078144A1 (en) | 2022-10-09 | 2023-08-22 | Carbazole salt and derivative thereof, and use thereof in preparation of solar cell |
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| WO2024078144A1 (en) * | 2022-10-09 | 2024-04-18 | 隆基绿能科技股份有限公司 | Carbazole salt and derivative thereof, and use thereof in preparation of solar cell |
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| CN102115457B (en) * | 2011-03-05 | 2012-11-21 | 太原理工大学 | Preparation method of N-ethylcarbazole |
| CN113461736A (en) * | 2021-01-29 | 2021-10-01 | 浙江华显光电科技有限公司 | Organic metal complex and organic photoelectric element containing same |
| CN114335346A (en) * | 2021-12-03 | 2022-04-12 | 西安隆基乐叶光伏科技有限公司 | Application of compound in solar cell |
| CN115915786A (en) * | 2022-10-09 | 2023-04-04 | 隆基绿能科技股份有限公司 | Carbazole salt and derivative thereof and application of carbazole salt in preparation of solar cell |
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