CN117977383A - Compact all-semiconductor laser based on VCSELs pumping VECSEL gain chip - Google Patents
Compact all-semiconductor laser based on VCSELs pumping VECSEL gain chip Download PDFInfo
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- CN117977383A CN117977383A CN202410319176.7A CN202410319176A CN117977383A CN 117977383 A CN117977383 A CN 117977383A CN 202410319176 A CN202410319176 A CN 202410319176A CN 117977383 A CN117977383 A CN 117977383A
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- gain chip
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000005086 pumping Methods 0.000 title claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 230000003287 optical effect Effects 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 9
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 230000005855 radiation Effects 0.000 abstract description 2
- 230000007613 environmental effect Effects 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
Abstract
The invention discloses a compact all-semiconductor laser based on VCSELs pumping VECSEL gain chip, comprising: a heat sink, a plurality of VCSELs light sources, a VECSEL gain chip, a collimating optical system, an aspheric metal mirror, and an output mirror; the VCSELs are arranged on the same heat sink, the pumping light emitted by the VCSELs is collimated to form a collimated light beam, the collimated light beam is incident on the aspheric metal reflector and then is folded back to be focused to the center of the VECSEL gain chip, when the pumping power density reaches the threshold value of the VECSEL gain chip, laser is generated, the VECSEL gain chip and the output mirror form a resonant cavity, the laser oscillates in the resonant cavity, and the laser is output from the output mirror. The invention uses the aspherical metal reflector and the adopted pumping sources VCSELs and VECSEL gain chips as semiconductor materials, simplifies the heat radiation system, enhances the reliability, portability and environmental adaptability of the system, and has wide application prospect.
Description
Technical Field
The invention relates to the technical field of lasers, in particular to a compact all-semiconductor laser based on a VCSELs pumping VECSEL gain chip.
Background
In recent years, with the continuous expansion of demands of application ends, requirements on output power, beam quality and portability of use of a laser are increasing.
VCSEL (vertical cavity surface emitting laser) has the characteristics of narrow line width, small temperature drift coefficient, two-dimensional expansion, small divergence angle, circular emergent light spots and the like, so that the VCSEL becomes a new choice of a pumping source of a semiconductor laser.
Because the thermal conductivity of the laser crystal is poor, the dielectric constant change and lattice deformation caused by light intensity and heat are generated during high-power laser pumping and high-power continuous output, nonlinear effects such as thermal lens effect and thermally induced birefringence effect can be generated, and the improvement of the power and the beam quality of the output laser is limited.
Different wavelengths can be obtained by using different gain materials for VECSEL (vertical external cavity surface emitting laser), and the VECSEL structure is undoped, has weaker free carrier absorption effect, less heat and light loss and stronger reliability of the device; compared with a laser crystal, the VECSEL has stronger absorption of pump light and wider wavelength requirement range of the pump light; these advantages make VECSEL more suitable as a gain medium than thin-sheet crystals as a semiconductor material that is easier to bond with a heat sink and better in heat dissipation efficiency.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention provides a compact all-semiconductor laser based on a VCSELs pumping VECSEL gain chip.
The invention discloses a compact all-semiconductor laser based on VCSELs pumping VECSEL gain chip, comprising: a heat sink, a plurality of VCSELs light sources, a VECSEL gain chip, a collimating optical system, an aspheric metal mirror, and an output mirror; wherein,
The VCSELs light sources and the VECSEL gain chips are arranged on the same heat sink, a plurality of beams of pump light emitted by the VCSELs light sources are collimated by the collimating optical system to form a plurality of collimated light beams, the collimated light beams are incident to the aspheric metal reflecting mirror and are folded and focused to the center of the VECSEL gain chip by the aspheric metal reflecting mirror, and laser generated by the VECSEL gain chip oscillates in a resonant cavity formed by the VECSEL gain chip and the output mirror and is output from the output mirror.
As a further improvement of the invention, the VCSELs light source and the VECSEL gain chip are all of semiconductor material.
As a further improvement of the invention, the VCSELs light sources are uniformly distributed around the VECSEL gain chip around the axis of the VECSEL gain chip with circumferences of different radii, so as to improve the pumping power, and the wavelength of the VCSELs is matched with the absorption peak of the VECSEL gain chip, and when the pumping power density reaches the threshold value of the VECSEL gain chip, laser is generated.
As a further improvement of the invention, the light incident surface of the output mirror is a concave surface, the light emergent surface of the output mirror is a plane, a part of the reflecting film is plated on the concave surface of the output mirror, and a resonant cavity is formed between the VECSEL gain chip and the part of the reflecting film plated on the concave surface of the output mirror; the laser generated by the VECSEL gain chip oscillates in the resonant cavity and finally is output from the plane of the output mirror.
As a further improvement of the invention, the aspheric mirror is made of metal, and the collimated light beam is focused on the surface of the VECSEL gain chip through the aspheric metal mirror to be subjected to mode matching with the size of the oscillating light spot.
The spot size of the collimated beam focused on the surface of the VECSEL gain chip by the aspheric metal mirror is calculated by the following formula:
where ω denotes the focused spot diameter, f denotes the focal length of the aspherical metal mirror, r denotes the radius of the different circumferences of the VCSELs light sources arranged circumferentially about the axis a, and α denotes the divergence angle of the light beam after passing through the collimating optical system.
As a further improvement of the present invention, there is also included: a housing; the heat sink, the plurality of VCSELs light sources, the VECSEL gain chip and the collimating optical system are arranged in the shell, the aspheric metal reflecting mirror is arranged at the end part of the shell, and the output mirror is arranged at the central light outlet hole of the aspheric metal reflecting mirror.
As a further improvement of the invention, the heat sink, the aspheric mirror and the shell are of a metal structure, the aspheric mirror and the output mirror are integrated, and the metal heat sink, the metal shell and the metal aspheric mirror jointly form the appearance structure of the laser.
Compared with the prior art, the invention has the beneficial effects that:
1. The invention uses VCSELs light source as pumping source, which can obtain better collimation and homogenization light spot, and simplify the optical system.
2. The invention uses the VECSEL gain chip of the semiconductor material as the gain medium, so that the heat loss is smaller, and meanwhile, more wavelength selections can be obtained by adopting different gain materials.
3. The VCSELs light sources are uniformly distributed around the VECSEL gain chip around the axis A in the circumferences of different radiuses and are simultaneously placed on the same heat sink, so that the heat dissipation structure is more compact. Through adopting the heat sink to cool the VECSEL gain chip end-pumped back, the heat that the gain chip produced only can dispel the heat along single axial for heat radiation structure design is simplified more, has promoted radiating efficiency.
4. The invention can realize that multiple light sources are focused to the same point at the same time by utilizing the aspheric metal reflecting mirror.
5. The invention utilizes VCSELs light source and VECSEL gain chip of all semiconductor material, and utilizes metal heat sink, aspheric metal mirror and metal shell, make the laser system have high reliability.
Drawings
FIG. 1 is a schematic diagram of a two-dimensional structure of a compact all-semiconductor laser based on a VCSELs pumped VECSEL gain chip of the present disclosure;
FIG. 2 is a schematic diagram of the VCSELs light source and VECSEL gain chip of FIG. 1 placed on a heat sink;
FIG. 3 is a schematic diagram of a three-dimensional structure of a compact all-semiconductor laser based on a VCSELs pumped VECSEL gain chip according to the present disclosure;
Fig. 4 is a schematic view of the focusing of a light beam by an aspherical metal mirror in accordance with the present invention.
In the figure:
1. A heat sink; 2. VCSELs light sources; 3. a VECSEL gain chip; 4. a collimating optical system; 5. an aspherical metal mirror; 6. an output mirror; 7. a housing.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention is described in further detail below with reference to the attached drawing figures:
As shown in fig. 1 and 3, the present invention provides a compact all-semiconductor laser based on VCSELs pumping VECSEL gain chip, comprising: a heat sink 1, a VCSELs light source 2, a gain chip 3, a collimating optical system 4, an aspherical metal mirror 5, an output mirror 6 and a housing 7; wherein,
The number of the VCSELs light sources 2 used by the invention is 8, the 8 VCSELs light sources 2 are uniformly distributed around the VECSEL gain chip 3 around the axis A in a circumference with different radiuses, the 8 VCSELs light sources 2 and the 1 VECSEL gain chip 3 are welded on the same heat sink, and the VECSEL gain chip 3 is positioned at the intersection point of the axis A and the heat sink 1 as shown in figure 2. The pump light emitted by the VCSELs light source 2 is incident on the aspheric metal reflecting mirror 5 after passing through the collimating optical system 4, and is folded and focused at the center of the VECSEL gain chip 3 by the aspheric metal reflecting mirror 5, and the generated laser is output from the output mirror 6.
Specific:
as shown in fig. 1, the collimating optical system 4 is disposed along the light propagation direction, and in this embodiment, the collimating optical system 4 uses a lens, which is made of glass, to collimate the light beam generated by the VCSELs light source 2.
The light beam collimated by the collimation optical system 4 is incident on the aspheric metal reflecting mirror 5, and is folded back and focused on the center position of the VECSEL gain chip 3, and the size of a light spot focused on the VECSEL gain chip 3 can be subjected to pattern matching with the size of an oscillation light spot; in this embodiment, the aspheric metal mirror 5 uses a parabolic mirror to focus the collimated light beam, so that multiple light sources can be focused to the same point of the VECSEL gain chip 3 at the same time to generate laser. As shown in fig. 4, the spot size of the collimated light beam focused on the surface of the VECSEL gain chip by the aspheric metal mirror is calculated by the following formula:
Where ω denotes the focused spot diameter, f denotes the focal length of the aspherical metal mirror 5, r denotes the radius of the different circumferences of the VCSELs light source 2 arranged circumferentially about the axis a, and α denotes the divergence angle of the light beam after passing through the collimating optical system 4.
As shown in fig. 1, the output mirror 6 of the present invention adopts a spherical concave lens, that is, the incident surface of the output mirror 6 is a concave surface, the exit surface is a plane, the concave surface of the output mirror 6 is plated with a partial reflecting film, and a resonant cavity is formed between the VECSEL gain chip 3 and the partial reflecting film plated on the concave surface of the output mirror; the laser light generated by the VECSEL gain chip 3 oscillates in the resonant cavity and is finally output from the plane of the output mirror 6.
In this embodiment, the wavelength of the VCSELs light source 2 is 806 nm, the VCSELs light source 2 and the VECSEL gain chip 3 are made of semiconductor materials, and the heat sink 1 is made of copper. The light emitting surface of the VECSEL gain chip 3 utilized in the embodiment is 3×3mm 2, and the end face pumping and back cooling of the VECSEL gain chip 3 are realized by adopting the heat sink 1, so that the heat generated by the VECSEL gain chip 3 can only dissipate heat along a single axial direction, the heat dissipation structure design is simplified, and the heat dissipation efficiency is improved.
In this embodiment, the housing 7, the heat sink 1 and the aspherical metal mirror 5 are of metal structure, so as to improve the reliability of the overall system of the laser, and the structure is shown in fig. 3.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A compact all-semiconductor laser based on VCSELs pumped VECSEL gain chips, comprising: a heat sink, a plurality of VCSELs light sources, a VECSEL gain chip, a collimating optical system, an aspheric metal mirror, and an output mirror; wherein,
The VCSELs light sources and the VECSEL gain chips are arranged on the same heat sink, a plurality of beams of pump light emitted by the VCSELs light sources are collimated by the collimating optical system to form a plurality of collimated light beams, the collimated light beams are incident to the aspheric metal reflecting mirror, are folded and focused by the aspheric metal reflecting mirror and then are incident to the center of the VECSEL gain chip, and laser generated by the VECSEL gain chip oscillates in a resonant cavity formed by the VECSEL gain chip and the output mirror and is output from the output mirror.
2. The compact all-semiconductor laser of claim 1, wherein the VCSELs light source and the VECSEL gain chip are all of semiconductor material.
3. The compact all-semiconductor laser of claim 1, wherein a plurality of said VCSELs light sources are uniformly distributed around said VECSEL gain chip at different radii of circumference around the axis of said VECSEL gain chip to increase pumping power, and the wavelength of said VCSELs is matched to the absorption peak of said VECSEL gain chip, and lasing occurs when the pumping power density reaches the threshold of the VECSEL gain chip.
4. The compact all-semiconductor laser of claim 1, wherein the aspheric mirror is made of metal, and the collimated beam is focused onto the surface of the VECSEL gain chip by the aspheric metal mirror to perform mode matching with the size of the oscillating light spot.
5. The compact all-semiconductor laser as claimed in claim 1, wherein the incident surface of the output mirror is a concave surface, the exit surface is a plane, the concave surface of the output mirror is partially coated with a reflective film, and a resonant cavity is formed between the VECSEL gain chip and the partially coated reflective film; the laser generated by the VECSEL gain chip oscillates in the resonant cavity and finally is output from the plane of the output mirror.
6. The compact all-semiconductor laser of claim 5, wherein the spot size of the collimated beam focused onto the surface of the VECSEL gain chip by the aspheric metal mirror is calculated by:
where ω denotes the focused spot diameter, f denotes the focal length of the aspherical metal mirror, r denotes the radius of the different circumferences of the VCSELs light sources arranged circumferentially about the axis a, and α denotes the divergence angle of the light beam after passing through the collimating optical system.
7. A compact all-semiconductor laser as defined in claim 1, further comprising: a housing; the heat sink, the plurality of VCSELs light sources, the VECSEL gain chip and the collimating optical system are arranged in the shell, the aspheric metal reflecting mirror is arranged at the end part of the shell, and the output mirror is arranged at the central light outlet hole of the aspheric metal reflecting mirror.
8. The compact all-semiconductor laser of claim 1, wherein the heat sink, the aspherical mirror and the housing are of a metal structure, the aspherical mirror and the output mirror are integrally formed, and the metal heat sink, the metal aspherical mirror and the metal housing together form the external structure of the laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410319176.7A CN117977383A (en) | 2024-03-20 | 2024-03-20 | Compact all-semiconductor laser based on VCSELs pumping VECSEL gain chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410319176.7A CN117977383A (en) | 2024-03-20 | 2024-03-20 | Compact all-semiconductor laser based on VCSELs pumping VECSEL gain chip |
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| Publication Number | Publication Date |
|---|---|
| CN117977383A true CN117977383A (en) | 2024-05-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410319176.7A Pending CN117977383A (en) | 2024-03-20 | 2024-03-20 | Compact all-semiconductor laser based on VCSELs pumping VECSEL gain chip |
Country Status (1)
| Country | Link |
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| CN (1) | CN117977383A (en) |
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- 2024-03-20 CN CN202410319176.7A patent/CN117977383A/en active Pending
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