CN117961100A - Electron beam calibration method for metal powder processing - Google Patents

Electron beam calibration method for metal powder processing Download PDF

Info

Publication number
CN117961100A
CN117961100A CN202410370550.6A CN202410370550A CN117961100A CN 117961100 A CN117961100 A CN 117961100A CN 202410370550 A CN202410370550 A CN 202410370550A CN 117961100 A CN117961100 A CN 117961100A
Authority
CN
China
Prior art keywords
calibration
electron beam
scanning
scan
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202410370550.6A
Other languages
Chinese (zh)
Inventor
张怡欣
周勃延
李鱼
全俊涛
赵培
向长淑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xi'an Sailong Additive Technology Co ltd
Original Assignee
Xi'an Sailong Additive Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xi'an Sailong Additive Technology Co ltd filed Critical Xi'an Sailong Additive Technology Co ltd
Priority to CN202410370550.6A priority Critical patent/CN117961100A/en
Publication of CN117961100A publication Critical patent/CN117961100A/en
Pending legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00Technologies related to metal processing
    • Y02P10/25Process efficiency

Landscapes

  • Welding Or Cutting Using Electron Beams (AREA)

Abstract

The invention relates to an electron beam calibration method for metal powder processing, which comprises the following steps: the deflection device is regulated to enable the beam spot center point of the electron beam to coincide with the center point of one marking hole of the calibration plate, and the beam spot position parameter of the electron beam at the moment is recorded; generating a dynamic calibration subarea by taking a mark hole on a calibration plate as a center; planning a dynamic calibration scanning path in the dynamic calibration subarea; the electron beam is controlled to scan the dynamic calibration scanning path at different scanning currents and scanning speeds to obtain focusing parameters and aberration parameters of the marking holes, namely calibration parameters of the marking holes; repeating the steps until the calibration parameters of all the marking holes on the calibration plate are obtained. By carrying out static calibration and dynamic calibration on the beam spots in the calibration area, the calibration state is close to the actual working condition of the electron beam spots, the problem of insufficient reliability of simple static calibration in the prior art is solved, and the problems of focusing and aberration calibration during high-energy output are solved.

Description

Electron beam calibration method for metal powder processing
Technical Field
The embodiment of the invention relates to the technical field of metal powder processing, in particular to an electron beam calibration method for metal powder processing.
Background
The electron beam selective melting has the advantages of high energy utilization rate, no reflection, high power density, high scanning speed, no pollution to vacuum environment, low residual stress and the like, is particularly suitable for directly forming active, refractory and brittle metal materials, has wide application prospect in the fields of aerospace, biomedical treatment, automobiles, molds and the like, and has the forming precision which is always an important factor for limiting the development of the materials. The shaping accuracy is still the quality of the electron beam at all, namely beam spot shape, size and position accuracy of the downbeam. When the electron beam scans the edge of the formed breadth, a large deflection angle is needed, the deflection angle of the electron beam is not limited in theory, and the factors of restricting the deflection angle of the electron beam in engineering are that the additional astigmatism caused by the non-uniformity of a scanning magnetic field is overlarge, the correction capability of a focusing device is exceeded, and the size of a beam spot is enlarged and the shape is distorted. The large size of the beam spot can cause processing defects due to energy non-concentration, and the shape distortion and position deviation of the beam spot can cause processing precision to be reduced. Therefore, calibration of the beam spot is required prior to processing. According to the shape, size and position of the electron beam at the set position, the deflection and focusing of the electron beam generating device are adjusted to reach a preset state, namely, the beam spot is as small as possible and round, and the position deviation meets the requirements. In addition, the accurate positioning and the uniformity of the shape and the size of the beam spot are realized at any position of a printing area by electric signals, wherein the change amplitude of the beam spot positioning electric signals is larger, the change amplitude of focusing and aberration electric signals is smaller, the electronic beam spot under the fast moving deflection is distorted compared with the electronic beam spot under the static state and the focusing and aberration distortion is serious, the processing quality of a formed piece is seriously influenced, and therefore, the development of a beam spot calibration method closer to the actual working state is needed.
In the prior art, no matter manual calibration or automatic calibration based on shooting imaging, the beam spots are calibrated point by point in sequence under static state, namely, a single beam spot or a plurality of beam spots are fixed at the marking holes of the calibration plate by means of the calibration plate, and the size, the shape and the brightness of the beam spots reach a preset state and coincide with the marking points by observing and adjusting the state of the beam spots. The calibration in this state is separated from the actual working condition of the electron beam, and the calibration reliability is insufficient.
Accordingly, there is a need to improve one or more problems in the related art as described above.
It is noted that this section is intended to provide a background or context for the technical solutions of the invention set forth in the claims. The description herein is not admitted to be prior art by inclusion in this section.
Disclosure of Invention
The present invention is directed to an electron beam calibration method for metal powder processing that, at least in part, obviates one or more problems due to limitations and disadvantages of the related art.
The invention provides an electron beam calibration method for metal powder processing, which comprises the following steps:
performing a static calibration on the electron beam, the static calibration comprising:
the deflection device is regulated to enable the beam spot center point of the electron beam to coincide with the center point of one marking hole of the calibration plate, and the beam spot position parameter of the electron beam at the moment is recorded;
adjusting the focusing device to make the size of the beam spot of the electron beam be the same as the size of the marking hole of the calibration plate;
Adjusting the astigmatic device to make the shape of the beam spot of the electron beam identical to the shape of the marking hole of the calibration plate;
dynamically calibrating the electron beam, the dynamically calibrating comprising:
generating a dynamic calibration subarea by taking a mark hole on a calibration plate as a center;
planning a dynamic calibration scanning path in the dynamic calibration subarea;
the electron beam is controlled to scan the dynamic calibration scanning path at different scanning currents and scanning speeds to obtain focusing parameters and aberration parameters of the marking holes, namely calibration parameters of the marking holes;
Repeating the steps until the calibration parameters of all the marking holes on the calibration plate are obtained.
In the invention, the calibration plate is a metal plate, a plurality of marking holes are arranged on the calibration plate, the marking holes are uniformly distributed on the calibration plate in an array manner, and the distance between two adjacent marking holes is D;
in the invention, the calibration plate is an aluminum plate.
In the invention, the dynamic calibration subarea is circular, the radius is delta, and the radius delta is larger than zero and smaller than the distance D between two adjacent marking holes.
In the invention, the dynamic calibration scanning path is circular or a polygon with central symmetry.
In the invention, the center of the dynamic calibration scanning path coincides with the center of the marking hole.
In the present invention, the scanning current is P, and the scanning current P satisfies the following formula (1):
P∈(0,P Shaping max)(1)
Wherein P Shaping max is the maximum current of the electron beam selective melting forming part;
The scanning speed is denoted as V, which satisfies the following formula (2):
V∈(0,V Shaping max)(2)
Where V Shaping max is the maximum deflection scan speed of the electron beam selected melt-formed part.
In the invention, when the electron beam is controlled to scan the dynamic calibration scanning path at the scanning current P and the scanning speed V,
Observing the morphology, brightness degree and scanning track of the electron beam spot, adjusting an astigmatism device and a focusing device, and adjusting the electron beam spot in the dynamic calibration area to a preset roundness and a preset size to obtain a calibration parameter F= (a, b) corresponding to a scanning current P and a scanning speed V; wherein a is a focusing parameter and b is a phase difference parameter.
In the invention, the scanning current P at least comprises three groups, which are respectively marked as a scanning current P 1, a scanning current P 2 and a scanning current P 3;
The scan speed V includes at least three sets, denoted as scan speed V 1, scan speed V 2, and scan speed V 3, respectively.
In the invention, the scanning current P 1 and the scanning speed V 1 are the scanning current and the scanning speed corresponding to the material of the melting solid structure;
The scanning current P 2 and the scanning speed V 2 are the scanning current and the scanning speed corresponding to the melting grid structure material;
The scan current P 3 and the scan speed V 3 are the scan current and the scan speed corresponding to the melting of the support structure material.
The technical scheme provided by the invention can comprise the following beneficial effects:
According to the invention, the static calibration and the dynamic calibration are carried out on the beam spots in the calibration area, the calibration state is close to the actual working condition of the electron beam spots, the problem of insufficient reliability of the pure static calibration in the prior art is solved, and the problems of focusing and aberration calibration during high-energy output are solved.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the disclosure and together with the description, serve to explain the principles of the disclosure. It will be apparent to those of ordinary skill in the art that the drawings in the following description are merely examples of the disclosure and that other drawings may be derived from them without undue effort.
FIG. 1 shows a schematic flow chart of an electron beam calibration method for metal powder processing in an exemplary embodiment of the invention;
FIG. 2 is a schematic diagram showing the structure of a calibration plate in an electron beam calibration method for metal powder processing according to an exemplary embodiment of the present invention;
FIG. 3 is a schematic diagram showing a dynamic calibration scan path shape as a circle in an electron beam calibration method for metal powder processing according to an exemplary embodiment of the present invention;
FIG. 4 is a schematic diagram showing a dynamic calibration scan path shape as a square in an electron beam calibration method for metal powder processing according to an exemplary embodiment of the present invention;
Fig. 5 is a schematic diagram showing a dynamic calibration scan path shape as a centrosymmetric pattern in an electron beam calibration method for metal powder processing according to an exemplary embodiment of the present invention.
In the figure, 1, a calibration plate; 2. marking the hole; 3. dynamically calibrating the subareas; 4. the scan path is dynamically calibrated.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. However, the exemplary embodiments may be embodied in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the example embodiments to those skilled in the art. The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
Furthermore, the drawings are merely schematic illustrations of embodiments of the invention and are not necessarily drawn to scale. The same reference numerals in the drawings denote the same or similar parts, and thus a repetitive description thereof will be omitted. Some of the block diagrams shown in the figures are functional entities and do not necessarily correspond to physically or logically separate entities.
In this exemplary embodiment, there is provided an electron beam calibration method for metal powder processing, referring to fig. 1, the control method including the steps of:
and S101, carrying out static calibration on the electron beam.
And S102, dynamically calibrating the electron beam.
Step S103, repeating the steps until the calibration parameters of all the marking holes 2 on the calibration plate 1 are obtained.
In step S101, static calibration is performed as follows:
s1011, adjusting a deflection device to enable the beam spot center point of the electron beam to coincide with the center point of one marking hole 2 of the calibration plate 1, and recording the beam spot position parameter of the electron beam at the moment;
Step S1012, adjusting a focusing device to enable the size of a beam spot of the electron beam to be the same as the size of the marking hole 2 of the calibration plate 1;
step s1013, adjust the astigmatic device so that the shape of the beam spot of the electron beam is the same as the shape of the marking hole 2 of the calibration plate 1.
In step S102, the dynamic calibration is performed as follows:
s1021, generating a dynamic calibration subarea 3 by taking a mark hole 2 on the calibration plate 1 as a center;
Step S1022, planning a dynamic calibration scanning path 4 in the dynamic calibration subarea 3;
Step S1023, controlling the electron beam to scan the dynamic calibration scanning path 4 at different scanning currents and scanning speeds to obtain focusing parameters and aberration parameters of the marking holes 2, namely, calibration parameters of the marking holes 2.
According to the electron beam calibration method for metal powder processing, static calibration and dynamic calibration are carried out on beam spots in the calibration area, the calibration state is close to the actual working condition of the electron beam spots, the problem of insufficient reliability of pure static calibration in the prior art is solved, and meanwhile the problems of focusing and aberration calibration during high-energy output are solved.
Alternatively, in some embodiments, the calibration plate 1 is a metal plate, such as an aluminum plate, at a lower cost. The calibrating plate 1 is provided with a plurality of marking holes 2, the marking holes 2 are uniformly distributed on the calibrating plate 1 in an array manner, and the distance between two adjacent marking holes 2 is D;
Alternatively, in some embodiments, the dynamic calibration subarea 3 is circular, has a radius δ, and the radius δ is greater than zero and less than the spacing D of two adjacent marking apertures 2.
Alternatively, in some embodiments, the dynamic calibration scan path 4 is circular in shape.
Alternatively, in some embodiments, the dynamic calibration scan path 4 is square in shape.
Alternatively, in some embodiments, the shape of the dynamic calibration scan path 4 is a centrally symmetric polygon.
Alternatively, in some embodiments, the center of the dynamic calibration scan path 4 coincides with the center of the marking aperture 2. The center of the dynamic calibration scanning path 4 coincides with the center of the marking hole 2, so that the shape of the dynamic calibration scanning path 4 is designed into a polygon with central symmetry, and the electron beam spot can be ensured to uniformly scan the dynamic calibration subarea 3 by taking the marking hole 2 as the center.
Optionally, in some embodiments, the scan current is P, and the scan current P satisfies the formula (1):
P∈(0,P Shaping max)(1)
Wherein P Shaping max is the maximum current of the electron beam selective melting forming part;
the scanning speed is denoted as V, and the scanning speed V satisfies the following formula (2):
V∈(0,V Shaping max)(2)
Where V Shaping max is the maximum deflection scan speed of the electron beam selected melt-formed part.
Alternatively, in some embodiments, the electron beam is controlled to scan the dynamically calibrated scan path 4 at a scan current P and a scan speed V,
Observing the morphology, brightness degree and scanning track of the electron beam spot, adjusting an astigmatism device and a focusing device, and adjusting the electron beam spot in the dynamic calibration subarea 3 to a preset roundness degree and a preset size to obtain a calibration parameter F= (a, b) corresponding to a scanning current P and a scanning speed V; wherein a is a focusing parameter and b is a phase difference parameter.
Optionally, in some embodiments, scan current P includes at least three groups, denoted as scan current P 1, scan current P 2, and scan current P 3, respectively;
The scan speed V includes at least three sets, denoted as scan speed V 1, scan speed V 2, and scan speed V 3, respectively.
In the invention, the scanning current P 1 and the scanning speed V 1 are the scanning current and the scanning speed corresponding to the material of the melting solid structure;
The scanning current P 2 and the scanning speed V 2 are the scanning current and the scanning speed corresponding to the melting grid structure material;
The scan current P 3 and the scan speed V 3 are the scan current and the scan speed corresponding to the melting of the support structure material.
Scanning the dynamic calibration subarea 3 near the first marking hole 2 at a current P 1 and a speed V 1 to perform dynamic calibration to obtain a calibration parameter (a 1,b1);
Scanning the dynamic calibration subarea 3 near the first marking hole 2 at a current P 2 and a speed V 2 to perform dynamic calibration to obtain a calibration parameter (a 2,b2);
Scanning the dynamic calibration subarea 3 near the first marking hole 2 at a current P 3 and a speed V 3 to perform dynamic calibration to obtain a calibration parameter (a 3,b3); the beam spot calibration parameter f1= { a 11,b11),(a12,b12),(a13,b13) } for the first marker aperture;
Repeating the above steps in the second marking hole 2 of the calibration plate 1 to obtain a beam spot calibration parameter F 2={ a21,b21),(a22,b22),(a23,b23) of the second marking hole 2;
……
repeating the above operation on the nth mark hole 2 of the calibration plate 1 to obtain a beam spot calibration parameter fn= { a n1,bn1),(an2,bn2),(an3,bn3) } of the nth mark hole 2;
When calibration of all n marking holes 2 is completed, the calibration parameter g= { F 1,F2,…,Fn } of the whole forming area is obtained.
The invention provides an electron beam calibration method for metal powder processing, which is used for obtaining focusing and aberration parameters for calibrating beam spots under a large beam flow through dynamic calibration.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, one skilled in the art can combine and combine the different embodiments or examples described in this specification.
Other embodiments of the application will be apparent to those skilled in the art from consideration of the specification and practice of the application disclosed herein. This application is intended to cover any variations, uses, or adaptations of the application following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the application pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the application being indicated by the following claims.

Claims (10)

1. An electron beam calibration method for metal powder processing, comprising:
performing a static calibration on the electron beam, the static calibration comprising:
The deflection device is regulated to enable the beam spot center point of the electron beam to coincide with the center point of one marking hole of the calibration plate, and the beam spot position parameter of the electron beam is recorded at the moment;
Adjusting a focusing device to make the size of a beam spot of the electron beam be the same as the size of the marking hole of the calibration plate;
adjusting an astigmatic device to make a beam spot of the electron beam have the same shape as the marking hole of the calibration plate;
dynamically calibrating the electron beam, the dynamically calibrating comprising:
Generating a dynamic calibration subarea by taking the marking hole on the calibration plate as a center;
Planning a dynamic calibration scanning path in the dynamic calibration subarea;
the electron beam is controlled to scan the dynamic calibration scanning path at different scanning currents and scanning speeds to obtain focusing parameters and aberration parameters of the marking holes, namely calibration parameters of the marking holes;
Repeating the steps until the calibration parameters of all the marking holes on the calibration plate are obtained.
2. The method according to claim 1, wherein the calibration plate is a metal plate, the calibration plate has a plurality of marking holes, the plurality of marking holes are uniformly distributed on the calibration plate in an array, and the distance between two adjacent marking holes is D.
3. An electron beam calibration method for metal powder processing according to claim 2, wherein the calibration plate is an aluminum plate.
4. An electron beam calibration method for metal powder processing according to claim 2 or 3, wherein the dynamic calibration subarea is circular with a radius δ, the radius δ being larger than zero and smaller than the distance D between the adjacent two marking holes.
5. An electron beam calibration method for metal powder processing according to claim 4, wherein the dynamic calibration scan path is circular or a centrally symmetric polygon in shape.
6. An electron beam calibration method for metal powder machining according to claim 5 wherein the center of the dynamic calibration scan path coincides with the center of the marking aperture.
7. The method according to claim 6, wherein the scanning current is P, and the scanning current P satisfies the following formula (1):
P∈(0,P Shaping max)(1)
Wherein P Shaping max is the maximum current of the electron beam selective melting forming part;
The scanning speed is denoted as V, which satisfies the following formula (2):
V∈(0,V Shaping max)(2)
Where V Shaping max is the maximum deflection scan speed of the electron beam selected melt-formed part.
8. The method of claim 7, wherein said controlling said electron beam scans said dynamically calibrated scan path at said scan current P and said scan speed V,
Observing the morphology, brightness and scanning track of the electron beam spot, adjusting the astigmatism device and the focusing device, and adjusting the electron beam spot in the dynamic calibration area to a preset roundness and a preset size to obtain a calibration parameter F= (a, b) corresponding to the scanning current P and the scanning speed V; wherein a is a focusing parameter and b is a phase difference parameter.
9. The method of claim 8, wherein the scan currents P comprise at least three groups, denoted as scan current P 1, scan current P 2, and scan current P 3, respectively;
The scanning speeds V include at least three groups, respectively designated as scanning speed V 1, scanning speed V 2, and scanning speed V 3.
10. The method according to claim 9, wherein the scanning current P 1 and the scanning speed V 1 are the scanning current and the scanning speed corresponding to the melting of the solid structure material;
the scanning current P 2 and the scanning speed V 2 are the scanning current and the scanning speed corresponding to the melting grid structure material;
The scan current P 3 and the scan speed V 3 are the scan current and the scan speed corresponding to the melted support structure material.
CN202410370550.6A 2024-03-29 2024-03-29 Electron beam calibration method for metal powder processing Pending CN117961100A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202410370550.6A CN117961100A (en) 2024-03-29 2024-03-29 Electron beam calibration method for metal powder processing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202410370550.6A CN117961100A (en) 2024-03-29 2024-03-29 Electron beam calibration method for metal powder processing

Publications (1)

Publication Number Publication Date
CN117961100A true CN117961100A (en) 2024-05-03

Family

ID=90865985

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202410370550.6A Pending CN117961100A (en) 2024-03-29 2024-03-29 Electron beam calibration method for metal powder processing

Country Status (1)

Country Link
CN (1) CN117961100A (en)

Similar Documents

Publication Publication Date Title
US20130248731A1 (en) Electron beam apparatus and lens array
EP1249855A1 (en) Device and method for controlling focussed electron beams
US6586753B2 (en) Electron beam apparatus and electron beam adjusting method
US6507034B1 (en) Charge beam exposure apparatus, charge beam exposure method, and charge beam exposure mask
US5444257A (en) Electron-beam exposure system for reduced distortion of electron beam spot
CN117961100A (en) Electron beam calibration method for metal powder processing
US4084095A (en) Electron beam column generator for the fabrication of semiconductor devices
CN116441562B (en) Device and method for calibrating beam spot of electron beam
WO2012042738A1 (en) Scanning electron microscope
JP2011014299A (en) Scanning electron microscope
JP4841878B2 (en) Electron beam apparatus and electron beam irradiation method
WO2021109159A1 (en) Method for preparing electron microscope diaphragm by using laser additive manufacturing
JP4535602B2 (en) Electron beam exposure apparatus and electron lens
JP2001126978A (en) Electron beam exposure system, adjusting method, and block mask
JP4095218B2 (en) Charged beam exposure method and exposure apparatus
US20240079207A1 (en) Multi-beam charged particle system and method of controlling the working distance in a multi-beam charged particle system
JP3450437B2 (en) Electron beam exposure method, developing method and apparatus
JP4212181B2 (en) Semiconductor exposure method and exposure apparatus
CN109269530B (en) High-frequency gain compensation method for nano positioning table
CN117116730A (en) Method for improving beam quality of electron beam
JPH10163089A (en) Electron beam drawing device
JPH04116915A (en) Drawing-beam diameter adjusting method
CN117594403A (en) Synchronous regulating device and method for high-speed deflection, dynamic focusing and astigmatism elimination of electron beam
JPH10312954A (en) Electron beam aligner
JPH0691001B2 (en) Charge beam control method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination