CN117954567A - Light-emitting module and display device - Google Patents

Abstract

The invention provides a light-emitting module and a display device, which comprises a circuit substrate and a heat-dissipating substrate, wherein the circuit substrate is provided with a first front surface and a first back surface which are oppositely arranged, the first front surface comprises a die bonding area for fixing a light-emitting element and a driving area, and the driving area comprises a driving element; the heat dissipation substrate is provided with a second front surface and a second back surface which are oppositely arranged, the second front surface comprises a heat dissipation area, the heat dissipation area is provided with at least one heat dissipation component, and each heat dissipation component comprises a P/N binary semiconductor; the heat dissipation area corresponds to the driving area, and at least one heat dissipation component is connected with the driving element. When the light-emitting element works, voltage is provided for the P/N binary semiconductor of the heat dissipation assembly, and heat generated by the light-emitting element and the driving element is transferred to one side of the heat dissipation substrate through the flow of current in the P/N binary semiconductor, so that heat dissipation efficiency of the light-emitting module is improved. The heat dissipation assembly can be correspondingly arranged according to the arrangement of the light-emitting element, the driving element and the circuit layer in the circuit substrate, so that local heat dissipation is realized.

Description

Light-emitting module and display device

Technical Field

The present invention relates to the field of semiconductor devices, and more particularly, to a light emitting module and a display device.

Background

LEDs are widely regarded as having high luminous efficiency, long service life, safety, reliability, environmental protection and energy saving, wherein micro LEDs are generally used for display screens. MicroLED the display typically uses a glass substrate as a carrier to control the light emission of MicroLED chips via TFT circuitry on the glass substrate. When the external driving IC gives the current to the TFT driving circuit, the heat resistance of the current flowing through the TFT circuit module and MicroLED chips can cause the temperature of the MicroLED chips and the TFT circuit module to rise, so that the temperature of the MicroLED display screen is raised, and the stability and the performance of the MicroLED display screen are deteriorated. In order to effectively dissipate heat, in the prior art, a heat dissipation component is generally attached to the other side opposite to the light-emitting surface of the glass substrate, so that the temperature of the MicroLED display screen is reduced.

However, since the glass substrate has a low heat dissipation coefficient, the degree of heat dissipation through the glass substrate is very limited; secondly, if the glass substrate has two ends with overlarge temperature difference, the glass substrate is extremely easy to generate stress cracking; in addition, the excessive temperature difference of the glass substrate also easily causes the stripping of the TFT film layer; in addition, the glass substrate is not easy to realize local heat dissipation, so that the working temperature of the Micro LED chip is easily increased, and the stability and performance of the Micro LED chip are affected.

Accordingly, it is desirable to provide a structure capable of improving heat dissipation efficiency and achieving local heat dissipation.

Disclosure of Invention

In view of the above problems and disadvantages of MicroLED display screens in the prior art, the present invention provides a light-emitting module and a display device. The first front surface or the first back surface of the circuit substrate is attached with a heat dissipation substrate, at least one heat dissipation component is arranged on the heat dissipation substrate, the heat dissipation component is a P/N binary semiconductor, and the P/N binary semiconductor can be flexibly arranged in a region needing heat dissipation, so that the heat dissipation efficiency is improved, and meanwhile, local heat dissipation is realized.

According to an embodiment of the present invention, there is provided a light emitting module including:

The LED lamp comprises a circuit substrate, a first LED lamp body and a second LED lamp body, wherein the circuit substrate is provided with a first front surface and a first back surface which are oppositely arranged, the first front surface comprises a die bonding area and a driving area, the die bonding area is used for fixing a light-emitting element, the driving area comprises a driving element, and the driving element is used for driving the light-emitting element;

The heat dissipation substrate is provided with a second front surface and a second back surface which are oppositely arranged, the second front surface comprises a heat dissipation area, at least one heat dissipation component is arranged in the heat dissipation area, and each heat dissipation component comprises a P/N binary semiconductor;

The heat dissipation area corresponds to the driving area, and at least one heat dissipation assembly is connected with the driving element.

Optionally, the heat dissipation substrate and the circuit substrate are connected in a manner of being opposite to the first front surface and the second front surface.

Optionally, the second front surface of the heat dissipation substrate is further provided with first heat conduction bonding layers arranged at intervals, and the P/N binary semiconductors are respectively arranged on the first heat conduction bonding layers at intervals.

Optionally, a second heat conducting adhesive layer is arranged on the surface of the P/N binary semiconductor on the side opposite to the first front surface, and the heat dissipation substrate is connected with the circuit substrate through the second heat conducting adhesive layer.

Optionally, the second front surface of the heat dissipation substrate further includes a reflective region, and the reflective region is formed with a reflective structure, and the reflective structure corresponds to the light emitting element.

Optionally, the reflecting structure is formed into a bowl-cup structure, and the light emitting surface of the light emitting element is located on the focal plane of the reflecting structure.

Optionally, the reflective surface of the reflective structure has a microstructure.

Optionally, a circuit area is further provided in the circuit substrate, a circuit layer is distributed in the circuit area, the driving element is electrically connected with the light emitting element through the circuit layer, the heat dissipation area corresponds to the circuit area, and at least one heat dissipation component is connected with the circuit area.

Optionally, the heat dissipation assembly is disposed around the light emitting element.

Optionally, the circuit substrate is a transparent substrate, and the first back surface of the circuit substrate is a light emitting surface of the light emitting module.

Optionally, the heat dissipation substrate and the circuit substrate are connected in a manner that a first back surface and a second front surface are opposite, and the heat dissipation component is connected to a corresponding region of the first back surface corresponding to the driving region.

Optionally, when a plurality of heat dissipation components are disposed on the heat dissipation substrate, the plurality of heat dissipation components are connected in series.

Optionally, a heat dissipating device is disposed on the second back surface of the heat dissipating substrate, and the heat dissipating device is a heat dissipating fin or a heat dissipating fan. According to another embodiment of the present invention, an LED display device is provided, which includes a housing, and a light emitting module disposed in the housing, where the light emitting module is the light emitting module provided by the present invention.

As described above, the light emitting module and the display device of the invention have the following beneficial effects:

The light-emitting module comprises a circuit substrate and a heat-dissipating substrate, wherein the circuit substrate is provided with a first front surface and a first back surface which are oppositely arranged, the first front surface comprises a die bonding area and a driving area, the die bonding area is used for fixing a light-emitting element, the driving area comprises a driving element, and the driving element is used for driving the light-emitting element; the heat dissipation substrate is provided with a second front surface and a second back surface which are oppositely arranged, the second front surface comprises a heat dissipation area, the heat dissipation area is provided with at least one heat dissipation component, and each heat dissipation component comprises a P/N binary semiconductor; the heat dissipation substrate and the circuit substrate are connected in a mode that the first front face and the second front face are opposite, the heat dissipation area corresponds to the driving area, and at least one heat dissipation component is connected with the driving element. When the light-emitting element works, voltage is provided for the P/N binary semiconductor of the heat radiation assembly, and heat generated by the light-emitting element and the driving element is transferred to one side of the heat radiation substrate by the flow of current in the P/N binary semiconductor, and the heat radiation is carried out through the heat radiation substrate, so that the heat radiation efficiency of the light-emitting module can be improved. The heat dissipation assembly can be correspondingly arranged according to the arrangement of the light-emitting element, the driving element and the circuit layer in the circuit substrate, so that local heat dissipation can be realized, and the heat dissipation effect is improved.

Drawings

Fig. 1 is a schematic structural diagram of a micro LED display screen in the prior art.

Fig. 2 is a schematic structural diagram of a light emitting module according to an embodiment of the invention.

Fig. 3 is a schematic structural diagram of a heat dissipating substrate in the light emitting module shown in fig. 2.

Fig. 4 shows a schematic diagram of the operation of the heat dissipating assembly.

Fig. 5 is a partial bottom view of the light emitting module shown in fig. 2.

Fig. 6 is a schematic diagram showing the structure of the flip-chip LED chip shown in fig. 2.

Fig. 7 is a schematic structural diagram of a light emitting module according to a second embodiment of the invention.

Fig. 8 is a schematic structural diagram of a heat dissipation substrate of the light emitting module shown in fig. 7.

Fig. 9 is a schematic structural diagram of a light emitting module according to a third embodiment of the invention.

Fig. 10 is a schematic structural diagram of a light emitting module according to a fourth embodiment of the invention.

Fig. 11 is a schematic structural diagram of a light emitting device according to an embodiment of the invention.

Description of element reference numerals

10 Vertical LED chip of LED display screen 1032

11. Shading area of glass substrate 104

12 LED chip 105 light emitting region

13. Welding electrode of heat radiation module 106

100. 200, 300, 400 Light emitting module 301 epitaxial structure

101. First semiconductor layer of circuit substrate 3011

1011. First front face 3012 second semiconductor layer

1012. First back 3013 light-emitting layer

1013. Reflective layer of die attach region 302

1014. Third insulating layer of driving region 303

102. Electrode structure of heat dissipation substrate 304

1021. Second front surface 3041 first electrode

1022. Second backside 3042 second electrode

1023. Front surface of heat dissipation area 310

1024. Back of the first heat conductive adhesive layer 320

1025. Reflecting structure of heat dissipation assembly 201

10251 P semiconductor element 330 heat conductive adhesive

10252 Radiator for N semiconductor element 401

1026. First insulating layer 500 display device

1027. Second heat conduction bonding layer 501 shell

1028. Second insulating layer 502 light-emitting module

1031. Flip LED chip

Detailed Description

Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.

As shown in fig. 1, in the prior art, the LED display 10 includes a glass substrate 11 and a plurality of LED chips 12 fixed on the glass substrate 11, and the LED display 10 further includes a heat dissipation module 13, where the heat dissipation module 13 is disposed on a side of the glass substrate 11 opposite to a side on which the LED chips 12 are fixed. When the LED chip 12 works, the LED display 10 generates heat, and the generated heat is transferred to the heat dissipation module 13 through the glass substrate 11, and is dissipated by the heat dissipation module 13. However, since the heat dissipation coefficient of the glass substrate 11 is low, the degree of heat dissipation through the glass substrate 11 is very limited; secondly, if the glass substrate 11 has two ends with excessively large temperature difference, stress cracking of the glass substrate 11 is extremely easy to occur; in addition, excessive temperature difference of the glass substrate 11 also easily causes peeling of the TFT film layer therein; in addition, the heat dissipation through the glass substrate 11 is not easy to realize local heat dissipation, and the working temperature of the Micro LED chip is easy to rise, so that the stability and the performance of the Micro LED chip are affected.

Example 1

In view of the above drawbacks, the present embodiment provides a light emitting module 100, as shown in fig. 2, which includes a circuit substrate 101 and a heat dissipation substrate 102, wherein the circuit substrate 101 has a first front surface 1011 and a first back surface 1012 disposed opposite to each other. As shown in fig. 2, the first front surface 1011 includes a die attach region 1013 and a driving region 1014, and a light emitting element, preferably a Micro-LED chip, is mounted on the die attach region 1013. The driving region 1014 includes a driving element for driving the light-emitting element to emit light.

As shown in fig. 2 to 4, the heat dissipation substrate 102 has a second front surface 1021 and a second back surface 1022 disposed opposite to each other, and the second front surface 1021 includes a heat dissipation area 1023. The heat dissipation area 1023 is provided with at least one heat dissipation assembly 1025, and each heat dissipation assembly 1025 includes a group of P/N binary semiconductors. As also shown in fig. 3, a first heat conductive adhesive layer 1024 is formed above the second front surface 1021 of the heat dissipating substrate 102 in a spaced arrangement, and P semiconductor elements 10251 and N semiconductor elements 10252 in the P/N binary semiconductor are respectively disposed on the first heat conductive adhesive layer 1024 in a spaced arrangement. The first thermally conductive adhesive layer 1024 is an electrically conductive material, and may be a metal material or a carbon layer, and may be one or a combination of several of Cu, ag, au, and the like when being a metal material. The first thermally conductive adhesive layer 1024, on the one hand, serves as an electrode for applying voltages to the P semiconductor element 10251 and the N semiconductor element 10252, respectively, providing current and heat paths for the P/N binary semiconductor; on the other hand, the P/N binary semiconductor is fixed on the heat dissipation substrate 102, and the heat transferred by the P/N binary semiconductor is transferred to the heat dissipation substrate 102, so that heat dissipation is realized.

Preferably, a first insulating layer 1026 is covered on the exposed surfaces of the first heat conductive adhesive layer 1024 except for the region where the P/N binary semiconductor is fixed and the P semiconductor elements 10251 and N semiconductor elements 10252 to protect the above-mentioned first heat conductive adhesive layer 1024 and the P semiconductor elements 10251 and N semiconductor elements 10252.

As also shown in fig. 2 and 3, the surfaces of the P semiconductor element 10251 and the N semiconductor element 10252 are provided with a second thermally conductive adhesive layer 1027, the second thermally conductive adhesive layer 1027 also being an electrically conductive material, preferably a metallic material such as one or a combination of several of Cu, ag, au, or the like. The second heat conductive adhesive layer 1027 is connected to the P semiconductor element 10251 and the N semiconductor element 10252, and communicates the P semiconductor element 10251 and the N semiconductor element 10252, for example, through a via hole formed in the first insulating layer 1026. The second thermally conductive adhesive layer 1027 communicates the P semiconductor elements 10251 and the N semiconductor elements 10252, and the second thermally conductive adhesive layer 1027 communicates the P semiconductor elements 10251 and the N semiconductor elements 10252 in a complete circuit with the first thermally conductive adhesive layer 1024. In alternative embodiments, P semiconductor element 10251 is formed of Sb ₂Te₃ and N semiconductor element 10252 is formed of bismuth telluride Bi ₂Te₃, although other suitable semiconductor materials may be used.

As shown in fig. 4, a schematic diagram of a circuit implementation heat dissipation of the P semiconductor element 10251 and the N semiconductor element 10252 is shown. As shown in fig. 4, when a voltage is applied through the first heat conductive adhesive layer 1024 as an electrode, the semiconductor material is subjected to the voltage applied from the outside to generate a current, and at this time, the electron current in the N semiconductor element 10252 flows and drives heat from the start end to the end, so that the temperature of one end of the semiconductor element is decreased, and the temperature of the other end is increased. Similarly, the difference in temperature between the two ends of the P-type semiconductor 10251 is driven by the hole flow. Therefore, the overall temperature of the object to be cooled can be reduced by the serial-parallel circuit of the plurality of P/N semiconductor elements 10252, and even the temperature difference can be made to be more than 30 ℃.

As shown in fig. 2, the heat dissipation substrate 102 is connected to the circuit substrate 101 in such a way that the first front surface 1011 and the second front surface 1021 are opposite, wherein the heat dissipation area 1023 corresponds to the driving area 1014, and at least one heat dissipation component 1025 is connected to the driving element. Optionally, the heat dissipation substrate 102 and the circuit substrate 101 are connected through the second heat conductive adhesive layer 1027 described above. In an alternative embodiment, a second insulating layer 1028 is further formed above the second heat conductive adhesive layer 1027, and the heat dissipation substrate 102 and the circuit substrate 101 may be further connected to each other through the second insulating layer 1028. Optionally, the heat dissipation substrate 102 and the circuit substrate 101 may be further bonded to each other by a heat conductive adhesive, OCA (Optically CLEAR ADHESIVE) optical adhesive.

As shown in fig. 5, a schematic bottom view of the portion of circle a in fig. 2 is shown. A die bond region 1013 in the circuit substrate 101 and a drive region 1014 are shown in which the light emitting element is fixed to the die bond region 1013 by a bonding electrode 106 in the die bond region 1013, the die bond region 1013 being in communication with the drive region 1014 via a wiring layer. A certain region corresponding to the light emitting element is formed as a light emitting region 105, and a light shielding region 104 is provided around the light emitting region 105 to prevent light radiated from adjacent light emitting elements from interfering with each other. The driving region 1014 corresponds to a heat sink assembly 1025 on the heat sink substrate 102.

In this embodiment, the heat dissipation component 1025 is disposed corresponding to the driving region 1014. It should be understood that, the heat dissipation component 1025 of this embodiment is a P/N binary semiconductor, so the heat dissipation component 1025 may be disposed in any area where heat dissipation is required, for example, the heat dissipation component 1025 may be disposed around the light emitting element to directly dissipate the heat generated by the light emitting element. Or can also be arranged above the grid wires and the data wires of the circuit layer; or on a COF (chip on film) region located on the side of the glass substrate; or over the demultiplexer MUX area of the light module 100. The above arrangement of the heat dissipation assembly 1025 can realize local heat dissipation of the light emitting module 100, and can improve heat dissipation efficiency of the light emitting module 100.

In addition, according to the distribution of the different regions and the shapes of the regions, for example, the shapes and the distribution of the gate wirings and the data wirings, the distribution of the heat dissipation members 1025 may be adjusted to be distributed along a rectangle, a circle, a square, or a polygon or an irregular shape.

Referring again to fig. 2, the light emitting element in this embodiment may be an LED chip vertical LED chip 1032 or a flip-chip LED chip 1031. Taking the flip-chip LED chip 1031 as an example, the LED chip is preferably a micro LED chip with a size smaller than 75 μm. As shown in fig. 6, the LED chip includes an epitaxial structure 301 and an electrode structure 304, the epitaxial structure 301 having a front surface 310 and a back surface 320 opposite the front surface 310. The electrode structure 304 is formed on the front surface 310 of the epitaxial structure 301 and is electrically connected to the epitaxial structure 301.

As also shown in fig. 6, epitaxial structure 301 includes a first semiconductor layer 3011, a second semiconductor layer 3012, and a light emitting layer 3013 located between first semiconductor layer 3011 and second semiconductor layer 3012. Alternatively, the first semiconductor layer 3011 may be an N-type semiconductor layer, and the second semiconductor layer 3012 may be a P-type semiconductor layer, and it is understood that a transparent conductive layer or the like may be formed over the second semiconductor layer 3012. In an alternative embodiment, the first semiconductor layer 3011 may be an n-type GaN layer, the light emitting layer 3013 may be a quantum well layer, and the second semiconductor layer 3012 may be a p-type GaN layer. Alternatively, the first semiconductor layer 3011 may be an n-type GaN layer, the light emitting layer 3013 may be an InGaN/GaN multiple quantum well, and the second semiconductor layer 3012 may be a p-type GaN layer. The electrode structure 304 includes a first electrode 3041 and a second electrode 3042, wherein the first electrode 3041 is electrically connected to the first semiconductor layer 3011, and the second electrode 3042 is electrically connected to the second semiconductor layer 3012. As shown in fig. 2, in order to enable light radiated by the light emitting element to exit from the glass substrate, a reflective layer 302 is formed on the back surface 320 of the epitaxial structure 301, and the reflective layer 302 enables light emitted by the light emitting layer 3013 to exit from the front surface 310 of the epitaxial structure 301 and finally exit through the first back surface 1012 of the glass substrate, that is, the first back surface 1012 of the glass substrate is formed as the light exit surface of the light emitting module 100.

As shown in fig. 6, a third insulating layer 303 is further formed on the surface of the epitaxial structure 301, and the third insulating layer 303 is formed on the surface of the epitaxial structure 301 or on the surface and the sidewalls of the epitaxial structure 301 to protect the LED chip.

Example two

The embodiment also provides a light emitting module, as shown in fig. 7, the light emitting module 200 of the embodiment also includes a circuit substrate 101 and a heat dissipation substrate 102, wherein the circuit substrate 101 has a first front surface 1011 and a first back surface 1012 disposed opposite to each other. The first front surface 1011 includes a die attach region 1013 and a driving region 1014, and the light emitting device is fixed on the die attach region 1013. The heat dissipation substrate 102 has a second front surface 1021 and a second back surface 1022 disposed opposite to each other, and the second front surface 1021 includes a heat dissipation area 1023. The heat dissipation area 1023 is provided with at least one heat dissipation assembly 1025, and each heat dissipation assembly 1025 includes a group of P/N binary semiconductors. The same points as those of the light emitting module 100 of the first embodiment are not described in detail, and the difference is that:

As shown in fig. 7, the heat dissipation substrate 102 of the light emitting module 200 of the present embodiment is further formed with a reflective structure 201. Preferably, the reflecting structure 201 is formed in a shape concave from the surface toward the heat dissipating substrate 102, for example, in a bowl-cup shape. As shown in fig. 8, the reflective structure 201 is formed in a reflective region around the heat dissipation region 1023.

In the light emitting module 200, the light emitting element is located on the focal plane of the bowl-cup structure. Thereby enabling the light radiated by the light emitting element to be further reflected and uniformly distributed throughout the light emitting region 105 to form approximately planar light. In a preferred embodiment, the reflective surface of the reflective structure 201 may be a smooth surface or may have a microstructure, such as a nano microstructure. The microstructure may be a concave structure, a saw tooth structure, or other modified shape, thereby increasing the reflection of light radiated by the light emitting element.

The light emitting element in this embodiment may be a chip perpendicular to the LED chip, or may be a flip-chip LED chip 1031. The flip-chip LED chip 1031 described in the first embodiment is also possible. In this embodiment, the reflective layer 302 may be formed on the back surface of the LED chip, or the reflective layer 302 may not be formed, but the light radiated by the LED chip is reflected by the reflective structure 201 on the heat dissipation substrate 102, and finally exits through the first back surface 1012 of the glass substrate.

Example III

The embodiment also provides a light emitting module, as shown in fig. 9, the light emitting module 300 of the embodiment also includes a circuit substrate 101 and a heat dissipation substrate 102, wherein the circuit substrate 101 has a first front surface 1011 and a first back surface 1012 disposed opposite to each other. The first front surface 1011 includes a die attach region 1013 and a driving region 1014, and the light emitting device is fixed on the die attach region 1013. The heat dissipation substrate 102 has a second front surface 1021 and a second back surface 1022 disposed opposite to each other, and the second front surface 1021 includes a heat dissipation area 1023. The heat dissipation area 1023 is provided with at least one heat dissipation assembly 1025, and each heat dissipation assembly 1025 includes a group of P/N binary semiconductors. The same points as those of the light emitting module 100 of the first embodiment are not described in detail, and the difference is that:

As shown in fig. 9, in the present embodiment, the heat dissipation substrate 102 and the circuit substrate 101 are connected in such a manner that the first back surface 1012 is opposite to the second front surface 1021, and the heat dissipation member 1025 is connected to the corresponding region of the first back surface 1012 corresponding to the driving region 1014. At this time, the heat dissipation substrate 102 and the circuit substrate 101 may be connected by the heat conductive adhesive 330. The bonding can also be performed by OCA (Optically CLEAR ADHESIVE) optical cement.

Example IV

The light emitting module 400 of the present embodiment also includes a circuit substrate 101 and a heat dissipation substrate 102, wherein the circuit substrate 101 has a first front surface 1011 and a first back surface 1012 disposed opposite to each other. The first front surface 1011 includes a die attach region 1013 and a driving region 1014, and the light emitting device is fixed on the die attach region 1013. The heat dissipation substrate 102 has a second front surface 1021 and a second back surface 1022 disposed opposite to each other, and the second front surface 1021 includes a heat dissipation area 1023. The heat dissipation area 1023 is provided with at least one heat dissipation assembly 1025, and each heat dissipation assembly 1025 includes a group of P/N binary semiconductors. The same points as those of the light emitting modules provided in the first to third embodiments are not described in detail, and the difference is that:

As shown in fig. 10, the second back surface 1022 of the heat dissipation substrate 102 of the light emitting module 400 of the present embodiment is further provided with a heat dissipation device 401, and the heat dissipation device 401 may be a heat dissipation fin or a heat dissipation fan. The heat dissipation device 401 and the heat dissipation component 1025 cooperate to further improve the heat dissipation efficiency of the light emitting module 400.

Example five

The present embodiment provides an LED display device 500, as shown in fig. 11, where the LED display device 500 includes a housing 501 and a light emitting module 502 disposed in the housing 501, and the light emitting module 502 may be a light emitting module provided in the first embodiment, the second embodiment, the third embodiment or the fourth embodiment. Or may be a combination of any two or three or four light emitting modules provided in the first, second, third and fourth embodiments.

The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.

Claims (14)

1.A light emitting module, comprising:

The LED lamp comprises a circuit substrate, a first LED lamp body and a second LED lamp body, wherein the circuit substrate is provided with a first front surface and a first back surface which are oppositely arranged, the first front surface comprises a die bonding area and a driving area, the die bonding area is used for fixing a light-emitting element, the driving area comprises a driving element, and the driving element is used for driving the light-emitting element;

The heat dissipation substrate is provided with a second front surface and a second back surface which are oppositely arranged, the second front surface comprises a heat dissipation area, at least one heat dissipation component is arranged in the heat dissipation area, and each heat dissipation component comprises a P/N binary semiconductor; the heat dissipation area corresponds to the driving area, and at least one heat dissipation assembly is connected with the driving element.

2. The lighting module of claim 1, wherein the heat sink substrate is coupled to the circuit substrate with the first front side and the second front side opposite to each other.

3. The light emitting module of claim 2, wherein the second front surface of the heat dissipating substrate is further provided with first heat conducting adhesive layers arranged at intervals, and the P/N binary semiconductors are respectively arranged on the first heat conducting adhesive layers at intervals.

4. A light emitting module as claimed in claim 2 or 3, wherein a second heat conductive adhesive layer is provided on a surface of the P/N binary semiconductor on a side opposite to the first front surface, and the heat dissipating substrate is connected to the circuit substrate through the second heat conductive adhesive layer.

5. The light emitting module of claim 2, wherein the second front surface of the heat dissipating substrate further comprises a reflective region, the reflective region being formed with a reflective structure, the reflective structure corresponding to the light emitting element.

6. The light emitting module of claim 5, wherein the reflective structure is formed as a bowl-cup structure and the light emitting surface of the light emitting element is located on a focal plane of the reflective structure.

7. The lighting module of claim 6, wherein the reflective surface of the reflective structure has a microstructure.

8. The light emitting module of claim 2, wherein a circuit area is further disposed in the circuit substrate, the circuit area is distributed with a circuit layer, the driving element is electrically connected with the light emitting element through the circuit layer, the heat dissipation area corresponds to the circuit area, and at least one of the heat dissipation components is connected with the circuit area.

9. The lighting module of claim 2, wherein the heat sink assembly is disposed around the light emitting element.

10. The lighting module of claim 2, wherein the circuit substrate is a transparent substrate, and the first back surface of the circuit substrate is a light emitting surface of the lighting module.

11. The light emitting module of claim 1, wherein the heat sink substrate and the circuit substrate are connected with a first back side and a second front side opposite to each other, and the heat sink assembly is connected to a corresponding region of the first back side corresponding to the driving region.

12. The lighting module of claim 1, wherein when a plurality of heat dissipating components are disposed on the heat dissipating substrate, the plurality of heat dissipating components are connected in series.

13. The light emitting module of claim 1, wherein the second back surface of the heat dissipating substrate is provided with a heat dissipating device, and the heat dissipating device is a heat dissipating fin or a heat dissipating fan.

14. An LED display device, comprising: a housing and a light emitting module arranged in the housing, wherein the light emitting module is the light emitting module according to any one of claims 1 to 13.