CN117943967A - Endpoint detection method, device and computer program - Google Patents
Endpoint detection method, device and computer program Download PDFInfo
- Publication number
- CN117943967A CN117943967A CN202211311634.XA CN202211311634A CN117943967A CN 117943967 A CN117943967 A CN 117943967A CN 202211311634 A CN202211311634 A CN 202211311634A CN 117943967 A CN117943967 A CN 117943967A
- Authority
- CN
- China
- Prior art keywords
- warming
- polishing
- real
- grinding
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 title claims abstract description 70
- 238000004590 computer program Methods 0.000 title claims abstract description 13
- 238000005498 polishing Methods 0.000 claims abstract description 188
- 238000010792 warming Methods 0.000 claims abstract description 104
- 238000011897 real-time detection Methods 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 41
- 238000000227 grinding Methods 0.000 claims description 201
- 238000004140 cleaning Methods 0.000 claims description 90
- 239000007788 liquid Substances 0.000 claims description 19
- 238000012423 maintenance Methods 0.000 claims description 11
- 230000008859 change Effects 0.000 claims description 9
- 230000001788 irregular Effects 0.000 claims description 7
- 238000013528 artificial neural network Methods 0.000 claims description 3
- 238000012549 training Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 23
- 235000012431 wafers Nutrition 0.000 description 77
- 239000002245 particle Substances 0.000 description 37
- 230000000694 effects Effects 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000047 product Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000007517 polishing process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 230000015654 memory Effects 0.000 description 4
- 238000004220 aggregation Methods 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000001932 seasonal effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
The present disclosure relates to an end point detection method, an end point detection device and a computer program, wherein the end point detection method comprises the steps of obtaining an intelligent detection trigger instruction; responding to the intelligent detection triggering instruction, and controlling a grinder to automatically grind the warming sheet; and acquiring the value of the real-time detection parameter of the polishing pad to be detected on the polishing machine, if the value of the target parameter in the real-time detection parameter reaches the corresponding threshold range, controlling the polishing machine to stop polishing the warming sheet and judging that the polishing pad to be detected meets the preset requirement, otherwise, controlling the polishing machine to continuously polish the warming sheet. The method can accurately position the polishing pad to the moment when the polishing pad just meets the preset requirement, stops polishing the polishing pad, saves the process time, reduces the consumption of the warming sheet, and also saves the cost loss of manually positioning the polishing end point.
Description
Technical Field
The present disclosure relates to the field of semiconductor manufacturing technology, and in particular, to an endpoint detection method, an endpoint detection device, and a computer program.
Background
In integrated circuit fabrication, a Chemical Mechanical Polishing (CMP) process is performed to remove a thin film from a wafer surface by a series of complex mechanical and chemical actions, thereby achieving the purpose of wafer planarization. For the polysilicon grinding process with higher adhesion of the grinding residue particles, a pre-cleaning module is selectively arranged on the hardware of the grinding machine to achieve better residue particle removal effect, and the cleaning mode of the pre-cleaning module is to polish the surface of the wafer back and forth by matching the grinding pad with cleaning liquid.
However, the polishing pad has a relatively poor polishing effect when the polishing pad is put into use, and the polishing pad cannot meet the wafer cleaning standard, and the polishing pad needs to be worn in, so that the conventional running-in method has relatively low efficiency and effect, and cannot meet the requirements of the conventional semiconductor preparation. Therefore, it is desirable to provide an endpoint detection method for polishing pad run-in to improve the efficiency of the chemical mechanical polishing process and the wafer cleaning effect.
Disclosure of Invention
The present disclosure provides an endpoint detection method, apparatus and computer program, which can accurately detect an endpoint of grinding pad running-in during equipment maintenance of a chemical mechanical polishing process, and accurately perform early running-in on a newly replaced grinding pad, so as to improve a cleaning effect of the grinding pad on a wafer and improve efficiency.
According to some embodiments, an aspect of the present disclosure provides an endpoint detection method, including the steps of: acquiring an intelligent detection trigger instruction; responding to the intelligent detection triggering instruction, and controlling the grinding machine to automatically grind the warming sheet; and acquiring the value of the real-time detection parameter of the polishing pad to be detected on the polishing machine, if the value of the target parameter in the real-time detection parameter reaches the corresponding threshold range, controlling the polishing machine to stop polishing the warming sheet and judging that the polishing pad to be detected meets the preset requirement, otherwise, controlling the polishing machine to continuously polish the warming sheet.
In the end point detection method in the above embodiment, the operation of the grinding machine for grinding the warming sheet is controlled by acquiring and judging that the value of the target parameter in the real-time detection parameter reaches the threshold range, specifically, if the target parameter reaches the threshold range, the grinding machine is controlled to stop grinding the warming sheet and judge whether the grinding pad meets the preset requirement at the moment, if the target parameter does not reach the threshold range, the grinding machine is controlled to repeat the previous step, namely, continue grinding the warming sheet, and the steps are repeated until the target parameter reaches the threshold range, and the grinding machine stops the process steps and enters the next process stage. The end point detection method can accurately position the polishing pad to the moment when the polishing pad just meets the preset requirement, and stops polishing the polishing pad at the moment, so that the grinding effect of the polishing pad is better, the cleaning effect of the polishing pad is better in the subsequent wafer cleaning process, the phenomenon that the wafer is not sufficiently cleaned or the surface has residual polishing products due to the fact that the polishing pad is excessively worn or is insufficiently worn in the subsequent wafer cleaning process is avoided, the process time is saved, the consumption of a warming sheet is reduced, and the time cost and the economic cost are saved. Before cleaning a wafer in the conventional technology, the method for grinding the grinding pad and detecting the roughness usually adopts a preset number of warming-up sheets to grind the grinding pad, or adopts a preset time period to grind the grinding pad, and the two methods cannot ensure that the roughness degree of the grinding pad just meets the standard of cleaning the wafer, but if the grinding pad after replacement is not ground in, the grinding pad is directly used for cleaning the wafer, so that uneven distribution of residues on the surface of the wafer, incomplete removal and residual particles can form a circular pattern on the surface of the wafer. According to the end point detection method, the grinding pad can be ground in, so that the machine is stopped when the roughness of the grinding pad just reaches the wafer cleaning standard, the wafer cleaning effect is better, excessive grinding of the grinding pad is avoided, the consumption of machine operation and warming-up sheets is saved, and the production efficiency of the grinding machine is improved.
In some embodiments, the real-time detection parameter includes at least one of a number of real-time consumed warming-up sheets, a grinding torque, a cleaning liquid flow, a vacuum pressure, and a spinning torque; the target parameter includes grinding torque.
In some embodiments, the polishing pad to be detected is a polishing pad that is replaced after maintenance of the polishing platen.
In some embodiments, the endpoint detection method further includes the steps of: acquiring different types of real-time detection parameters and time sequence data of the real-time consumption warming-up piece quantity and the warming-up piece cleaning degree of the polishing pad to be detected respectively; and determining the target parameters according to the change trend of the time sequence data.
In some embodiments, determining the target parameter according to the trend of the time series data comprises the steps of: and acquiring a corresponding real-time detection parameter with the minimum irregular fluctuation coefficient value in the time sequence data as a target parameter.
In some embodiments, after determining the target parameter, the endpoint detection method further comprises: and acquiring a functional relation of the real-time consumption warming piece quantity, the target parameter and the warming piece cleaning degree of the polishing pad to be detected.
In some embodiments, if the value of the target parameter in the real-time detection parameter reaches the corresponding threshold range, the corresponding target number of consumed warming pieces is obtained according to the real-time number of consumed warming pieces of the polishing pad to be detected, the functional relationship between the target parameter and the cleaning degree of the warming pieces, and the value of the target parameter.
In some embodiments, the target consumed warm-up amount of the polishing pad is different for different polishing pads to be detected.
In some embodiments, data fitting or neural network training is performed according to the initial consumed number of warming plates sample, the initial grinding torque sample and the initial warming plate cleaning degree sample, so as to obtain a functional relationship between the real-time consumed number of warming plates, the grinding torque and the warming plate cleaning degree of the grinding pad to be detected.
In some embodiments, the step of detecting in real time that the value of the target parameter is higher than the corresponding threshold range further comprises: if the number of the real-time consumed warming pieces reaches the corresponding threshold range of the number of the warming pieces, controlling the grinding machine to stop grinding the warming pieces and judging that the grinding pad to be detected meets the preset requirement; otherwise, the grinder is controlled to continuously grind the warm-up sheet.
According to some embodiments, another aspect of the disclosure further provides an endpoint detection apparatus, including an acquisition module and a control module. The acquisition module is used for acquiring an intelligent detection trigger instruction; the control module is used for responding to the intelligent detection triggering instruction, controlling the grinding machine to automatically grind the warming sheet, acquiring the value of the real-time detection parameter of the grinding pad to be detected on the grinding machine, and controlling the grinding machine to stop grinding the warming sheet and judge that the grinding pad to be detected meets the preset requirement if the value of the target parameter in the real-time detection parameter reaches the corresponding threshold range, otherwise, controlling the grinding machine to continuously grind the warming sheet.
In the end point detection device, the control module can control the grinder to grind the warm-up sheet, acquire the value of the target parameter in real time, control the grinder to stop grinding when the target parameter reaches the corresponding threshold range, and continuously control the grinder to grind the warm-up sheet until the target parameter reaches the threshold range if the target parameter does not reach the corresponding threshold. The end point detection device can stop grinding when the roughness of the grinding pad just reaches the wafer cleaning standard, so that uneven distribution residues on the surface of the wafer can not be caused when the grinding pad cleans the wafer, and the wafer cleaning degree is not enough, and the follow-up process is not affected. The end point detection device can solve the problem that no targeted end point is set for running-in of the grinding pad in the traditional technology, can save consumption of a warm-up sheet and running loss of a grinding machine, can also save time, enables the running-in of the grinding pad to be matched with the end point of the grinding machine when reaching a preset standard, and improves the efficiency of semiconductor preparation.
In some embodiments, the real-time detection parameter includes at least one of a number of real-time consumed warming-up sheets, a grinding torque, a cleaning liquid flow, a vacuum pressure, and a spinning torque; the target parameter includes grinding torque.
In some embodiments, the polishing pad to be detected is a polishing pad that is replaced after maintenance of the polishing platen.
In some embodiments, the acquisition module further comprises steps for acquiring the target parameter as follows: acquiring different types of real-time detection parameters and time sequence data of the real-time consumption warming-up piece quantity and the warming-up piece cleaning degree of the polishing pad to be detected respectively; and determining the target parameters according to the change trend of the time sequence data.
In some embodiments, the control module further comprises: the function relation acquisition module is used for acquiring the function relation of the real-time consumption warming piece quantity, the polishing torque and the warming piece cleaning degree of the polishing pad to be detected.
In some embodiments, the control module is further configured to: if the number of real-time consumed warming pieces reaches the corresponding threshold range of the number of warming pieces, controlling the grinding machine to stop grinding the warming pieces and judging that the grinding pad to be detected meets the preset requirement; otherwise, the grinder is controlled to continuously grind the warm-up sheet.
According to some embodiments, a further aspect of the present disclosure also provides a computer program product having a computer program stored thereon, which, when executed by a processor, implements the steps of the method of any of the embodiments of the present disclosure.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings required for the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and it is also possible for a person skilled in the art to obtain drawings of other embodiments according to these drawings without inventive effort.
FIG. 1 is a schematic top view of a wafer surface according to one embodiment of the present disclosure;
FIG. 2 is a schematic diagram illustrating a set polishing pad path according to one embodiment of the present disclosure;
FIG. 3 is a flow chart of an endpoint detection method according to an embodiment of the present disclosure;
FIG. 4 is a graph showing the real-time consumption of the number of warming plates, the polishing torque and the cleaning degree of the polishing pad to be detected according to one embodiment of the present disclosure;
FIG. 5 is a graph showing the real-time consumed number of warming plates, polishing torque and cleaning degree of the polishing pad to be detected according to various embodiments of the present disclosure.
Detailed Description
In order that the disclosure may be understood, a more complete description of the disclosure will be rendered by reference to the appended drawings. Preferred embodiments of the present disclosure are shown in the drawings. This disclosure may, however, be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. The terminology used in the description of the disclosure herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
Where the terms "comprising," "having," and "including" are used herein, another component may also be added unless a specifically defined term is used, such as "consisting of only," "… …," etc. Unless mentioned to the contrary, singular terms may include plural and are not to be construed as being one in number.
As the integration and volume of memories such as DRAM (Dynamic Random Access Memory ) are reduced, the density of circuit structures within the memories is also gradually increased, and the increase in density results in the line width of metal lines forming the circuit structures and the spacing between two adjacent metal lines also being gradually reduced. The chemical mechanical polishing process can be applied to the surface of the wafer to reduce the defects of the wafer, provide a better foundation for devices formed later, and especially for the polysilicon polishing process with higher adhesion of the polishing residue particles, a pre-cleaning module is selectively arranged on the hardware of a polishing machine to achieve better residue particle removal effect, and the cleaning mode of the pre-cleaning module is to polish the surface of the wafer back and forth by matching a polishing pad with a cleaning liquid, wherein the cleaning liquid is generally formed by mixing submicron or nanoscale polishing particles, a chemical corrosive agent, deionized water and the like, so that the effect of efficiently removing the residue particles and byproducts brought by a polishing part is realized. Because the polishing pad is a consumable product, the polishing pad has a service life and needs to be maintained and replaced regularly.
Referring to fig. 1, however, in the polishing pad in the initial stage of use after maintenance and replacement of the polishing pad, after cleaning the polished wafer, the particles of the polishing residues adhered to the surface of the wafer generate a distinct circular pattern, the center of the circle is the same as that of the wafer, i.e., the particles of the residues gather on the surface of the wafer at a concentric circle position with the same center of the circle, and the corresponding components of the particles in the concentric circle are located and detected, and most of the particles remain as particles polished from the surface of the wafer, such as polysilicon, and the adhesion of the particles to the surface of the wafer is very strong.
Referring to fig. 2, after measuring the concentric pattern and the running path and size of the polishing pad, it is found that the polishing pad reciprocates on a line with a polishing range of 30mm to 140mm from the center of the wafer on the surface of the wafer, and the radius of the concentric pattern exactly matches the running path of the polishing pad along with the rotation of the polishing pad and the rotation of the wafer. Therefore, the incomplete removal of the particles remaining on the wafer surface after polishing is caused by insufficient roughness of the surface of the polishing pad in contact with the wafer in the initial stage of use, and the required cleaning effect is not achieved, so that the particles with strong adhesion cannot be detached from the wafer surface, and the cleanliness of the wafer surface is one of the important factors affecting the reliability of the semiconductor device, and these residues may adversely affect the subsequent process and may cause the yield loss of the wafer. To solve the above problems, the number of the warming-up sheets is generally increased to make the degree of grinding into the polishing pad larger. The specific scheme of running-in is that a preset number of warming-up sheets are generally used for running-in the grinding pad, the grinding pad after running-in is subjected to wafer cleaning test, and if the surface of the wafer also has concentric circle patterns formed by residual particles, the steps of circulating running-in and testing are continued until the circular patterns of the residual particles on the surface of the wafer are observed to be eliminated by manual monitoring; another solution is to adopt a preset time, and utilize a warm-up sheet to break in the polishing pad, where the preset time is generally longer than the time required for the polishing pad to reach the standard. The two methods not only consume manpower, but also increase a large amount of equipment operation loss, time cost and warm-up sheet loss, and reduce the production efficiency of enterprises.
Therefore, the present disclosure provides an endpoint detection method, apparatus and computer program, which can accurately perform early running-in on a newly replaced polishing pad during equipment maintenance in a chemical mechanical polishing process, so as to improve the cleaning effect of the polishing pad on a wafer and improve the efficiency.
As an example, referring to fig. 3, an aspect of the disclosure provides an endpoint detection method, including the following steps:
Step S2: acquiring an intelligent detection trigger instruction;
Step S4: responding to the intelligent detection triggering instruction, and controlling the grinding machine to automatically grind the warming sheet;
Step S61: acquiring the value of a real-time detection parameter of a polishing pad to be detected on a polishing machine, and judging whether the value of a target parameter in the real-time detection parameter reaches a corresponding threshold range;
Step S62: if yes, the grinding machine is controlled to stop grinding the warming sheet and judge that the grinding pad to be detected meets the preset requirement, otherwise, the grinding machine is controlled to continuously grind the warming sheet, namely, the step S4 is continuously returned.
In the end point detection method in the above embodiment, the grinding machine is controlled to stop grinding the warming sheet by acquiring and judging that the value of the target parameter in the real-time detection parameter reaches the threshold range, specifically, if the target parameter reaches the threshold range, the grinding machine is controlled to stop grinding the warming sheet and judge whether the grinding pad meets the preset requirement at the moment, if the target parameter does not reach the threshold range, the grinding machine is controlled to repeat the previous step, namely, continue grinding the warming sheet, and repeating the steps until the target parameter reaches the threshold range, and the grinding machine stops the process step and enters the next process stage. The end point detection method can accurately position the polishing pad to the moment when the polishing pad just meets the preset requirement, and stops polishing the polishing pad at the moment, so that the grinding effect of the polishing pad is better, the cleaning effect of the polishing pad is better in the subsequent wafer cleaning process, the phenomenon that the wafer is not sufficiently cleaned or the surface has residual polishing products due to the fact that the polishing pad is excessively worn or is insufficiently worn in the subsequent wafer cleaning process is avoided, the process time is saved, the consumption of a warming sheet is reduced, and the time cost and the economic cost are saved. Before cleaning a wafer in the conventional technology, the method for grinding the grinding pad and detecting the roughness usually adopts a preset number of warming-up sheets to grind the grinding pad, or adopts a preset time period to grind the grinding pad, and the two methods cannot ensure that the roughness degree of the grinding pad just meets the standard of cleaning the wafer, but if the grinding pad after replacement is not ground in, the grinding pad is directly used for cleaning the wafer, so that uneven distribution of residues on the surface of the wafer, incomplete removal and residual particles can form a circular pattern on the surface of the wafer. According to the end point detection method, the grinding pad can be ground in, so that the machine is stopped when the roughness of the grinding pad just reaches the wafer cleaning standard, the wafer cleaning effect is better, excessive grinding of the grinding pad is avoided, the consumption of machine operation and warming-up sheets is saved, and the production efficiency of the grinding machine is improved.
As an example, the real-time detection parameter includes at least one of a number of real-time consumed warming pieces, a grinding torque, a flow rate of the cleaning liquid, a vacuum pressure, and a rotation torque; the target parameter includes grinding torque.
As an example, the real-time detection parameter is a parameter related to the running-in process of the grinding machine to the grinding pad, the number of real-time consumed warm-up sheets increases with the running-in time of the grinding pad, and in the actual production process, the number of one box of warm-up sheets is 25; the flow rate of the cleaning liquid is increased along with the increase of the running-in time of the grinding pad, and the cleaning liquid is matched with the grinding pad to polish the surface of the wafer back and forth, so that the effect of removing the residual particle products and some byproducts brought by the grinding part is realized; the vacuum pressure presses the polishing pad on the wafer and simultaneously reciprocates with the spraying of the cleaning liquid, specifically, the vacuum pressure can be 11lbf (pound force) -13lbf, for example, the vacuum pressure can be 11lbf, 12lbf or 13lbf, etc.; the rotation torque is the torque generated by the rotation of the polishing pad. The target parameters comprise grinding torque, wherein the grinding torque is torque generated by wafer rotation, and when a grinding machine starts to grind a grinding pad, if the value of the grinding torque reaches a corresponding threshold range, the grinding machine stops grinding a warming-up sheet; if the grinding torque value does not reach the corresponding threshold range, the grinding machine continues to circularly grind the warming sheet and judges whether the grinding torque value reaches the corresponding threshold range.
As an example, the grinding torque indicates the degree to which the motor that rotates the warming-up sheet receives resistance, and the larger the grinding torque, the larger the resistance that the motor that rotates the warming-up sheet receives at the moment.
As an example, the real-time detection parameter further includes a torque of the polishing pad reciprocating motion, specifically, the polishing pad reciprocates on a line with a polishing range of 30mm to 140mm from the center of the circle of the wafer, and a corresponding torque is generated during the reciprocation.
As an example, the running-in degree of the polishing pad increases with the increase of the number of the warming-up sheets consumed in real time, and the running-in degree of the polishing pad is not too large or too small, which consumes unnecessary warming-up sheets and the running cost of equipment, and the running-in degree is too small to achieve the preset wafer cleaning effect, so that polishing residue particles exist on the cleaned wafer, so that the reworking of the subsequent process or the yield of the product is reduced. Therefore, the machine needs to be stopped when the running-in degree of the polishing pad just reaches the preset requirement, but because the initial roughness of the polishing pad is different and other production environment reasons, the number of the consumed warming-up pieces is different when the running-in degree of different polishing pads just reaches the preset requirement.
As an example, the polishing pad to be detected is a polishing pad that is replaced after maintenance of the polishing machine. Because the thickness of the wafers of different products is different, the thickness of the wafers is usually between 0.5mm (millimeter) and 0.7mm, besides the thickness, the curvature of the wafers can also change along with the improvement of the process, and if the wafers of different products use the same cleaning device, the conditions of low rotating speed, unstable rotating speed or non-rotation can also occur. Similarly, when a wafer is cleaned, the thickness and the surface condition of the wafer also have certain requirements on the roughness of the polishing pad, the roughness of the polishing pad needs to reach the preset requirements to enable the cleaning effect of the wafer to reach the standard, after the polishing pad reaches the service life and the new polishing pad is replaced again, the roughness of the contact surface of the new polishing pad and the wafer generally does not reach the preset requirements, therefore, the polishing pad which is replaced again after the maintenance of the polishing table is required to be ground in, the traditional grinding pad grinding mode does not usually have a working end point, a large amount of manpower is generally required to be consumed for manually positioning the end point, and the end point detection method provided by the disclosure does not need to manually position the grinding end point of the polishing pad only by judging whether the target parameter reaches the preset threshold range, so that the manpower is saved.
As an example, the end point detection method further includes the steps of obtaining the target parameter as follows: acquiring different types of real-time detection parameters and time sequence data of the real-time consumption warming-up piece quantity and the warming-up piece cleaning degree of the polishing pad to be detected respectively; and determining the target parameters according to the change trend of the time sequence data. Specifically, time series data of grinding torque, flow rate of cleaning liquid, vacuum pressure and autorotation torque, the number of real-time consumed warming pieces of the grinding pad to be detected and the cleaning degree of the warming pieces are respectively obtained; several groups of different time series data are obtained, a target parameter is determined according to the change trend, and a preset threshold range of the target parameter is set for detecting the running-in end point of the polishing pad.
As an example, determining the target parameter according to the different real-time detection parameters and the trend of the time series data of the real-time consumption warm-up sheet number and the warm-up sheet cleaning degree of the polishing pad to be detected, includes the following steps: and acquiring a corresponding real-time detection parameter with the minimum irregular fluctuation coefficient value in the time sequence data as a target parameter. The irregular fluctuation is random fluctuation after removing trend, seasonal fluctuation and periodic fluctuation in the time sequence, and is always mixed in the time sequence, so that the time sequence generates a fluctuation of wave shape or oscillation type, the smaller the irregular fluctuation coefficient value is, the larger the linearity degree of the time sequence data is, the larger the linearity degree is, and the stronger the correlation between the real-time detection parameter and the real-time consumption warming-up piece number and the warming-up piece cleaning degree of the polishing pad to be detected is shown. Therefore, a corresponding real-time detection parameter with the minimum irregular fluctuation coefficient value in the time sequence data is selected as the target parameter, so that the endpoint time of the grinding machine for grinding the grinding pad can be accurately detected, the grinding of the grinding pad is stopped, the manpower is saved, the loss of the grinding machine is reduced, and the efficiency is improved.
As an example, polishing torque y1, cleaning liquid flow rate y2, vacuum pressure y3, and rotation torque y4 are obtained respectively from time-series data D1, D2, D3, D4 of real-time consumed number of warming-up sheets x, degree of cleaning of warming-up sheets z of the polishing pad to be detected, time-series data d1= [ x z,y1z ] corresponding to polishing torque y1, time-series data d2= [ x z,y2z ] corresponding to cleaning liquid flow rate y2, time-series data d3= [ x z,y3z ] corresponding to vacuum pressure y3, and time-series data d4= [ x z,y4z ] corresponding to rotation torque y 4. In the embodiment of the present disclosure, one of the time-series data D1, D2, D3, D4 with the smallest irregular fluctuation coefficient value is the polishing torque y1, i.e., the real-time detection parameter of the polishing torque y1 is the target parameter ym.
As an example, after determining the target parameter, the endpoint detection method further includes: and acquiring a functional relation of the real-time consumption warming piece quantity, the target parameter and the warming piece cleaning degree of the polishing pad to be detected.
As an example, referring to fig. 4, fig. 4 is a graph of a functional relationship between a grinding torque and a number of consumed warming-up sheets in a process of the grinding table running-in the warming-up sheets by using the grinding pad, and when the functional relationship graph is obtained, a cleaning degree of the warming-up sheets corresponding to each point needs to be obtained at the same time, wherein an ox coordinate axis is represented by the number of consumed warming-up sheets, a oym coordinate axis is represented by the grinding torque, an oz coordinate axis is represented by the cleaning degree of the warming-up sheets (not shown in the drawing), the cleaning degree of the warming-up sheets may be represented by a real-time surface detection screenshot of the warming-up sheets, or may be represented by a coordinate diagram of a residual particle content value on the warming-up sheets and a corresponding coordinate, or may be represented by a percentage of the residual particle content value removed on the warming-up sheets, which is the residual particle content value accounts for the total residual particle content value. In this embodiment, the degree of cleaning the warming sheet is a percentage of the total residual particle content value of the residual particle content value removed on the warming sheet, that is, the ym value when z=100% reaches the corresponding threshold range, and at this time, the grinder is controlled to stop grinding the warming sheet. For example, at point a in fig. 4, it may be monitored that the number of consumed warming plates is 28 and the polishing torque is 2.38n·m, and when the real-time surface detection screenshot of the warming plates shows that a small portion of the polishing residue particles on the surface of the warming plates are present on the surface of the warming plates, and are not completely eliminated, that is, at point a in fig. 4, x=28 and ym=2.38 when z=70%; at point B in fig. 4, the number of consumed warming plates is 80, the polishing torque is 2.46n·m, and the real-time surface detection screenshot of the warming plates shows that the particles of the polishing residues on the surfaces of the warming plates are completely eliminated, and the circular pattern formed by the aggregation of the particles just completely disappears, i.e., at point B in fig. 4, x=80, ym=2.46 when z=100%. Because the correlation degree between the polishing torque and the number of the real-time consumed warming-up pieces and the cleaning degree of the warming-up pieces of the polishing pad to be detected is strong, a value of the polishing torque near 2.46 N.m can be marked as a preset threshold value to serve as the end point of the polishing pad running-in, and the polishing platform can stop running the polishing pad when the preset threshold value of the polishing torque is detected.
As an example, referring to fig. 5, fig. 5 is a graph of a functional relationship between polishing torque and the number of consumed warming-up sheets in the process of performing the same process on the warming-up sheets by using the polishing pad, and the cleaning degree of the warming-up sheets corresponding to each point needs to be obtained simultaneously when the functional relationship graph is obtained. For example, at point a 'in fig. 5, the number of consumed warming plates is 54, the polishing torque is 2.15n·m, and when the real-time surface detection screenshot of the warming plates shows that most of the particles of the polishing residues on the surfaces of the warming plates exist on the surfaces of the warming plates, and the concentric circle pattern formed by the particles is obvious, that is, at point a' in fig. 5, x=54, ym=2.15 when z=20%; at point B 'in fig. 5, the number of consumed warming plates can be monitored to be 78, the polishing torque is 2.35n·m, and when the real-time surface detection screenshot of the warming plates shows that a small amount of particles of polishing residues on the surfaces of the warming plates remain, the circular pattern formed by particle aggregation still exists but is not obvious, namely at point B' in fig. 5, x=78 and ym=2.35 when z=90%; at point C 'in fig. 5, the number of consumed warming plates is 116, the polishing torque is 2.45n·m, and the real-time surface detection screenshot of the warming plates shows that the particles of the polishing residues on the surfaces of the warming plates completely disappear, and the circular pattern formed by the aggregation of the particles also just completely disappears, that is, at point C' in fig. 5, x=116, ym=2.45 when z=100%. Because the correlation degree between the polishing torque and the number of the real-time consumed warming-up pieces and the cleaning degree of the warming-up pieces of the polishing pad to be detected is strong, a value of the polishing torque near 2.45 N.m can be marked as a preset threshold value to serve as the end point of the running-in of the polishing pad, and the polishing platform can stop running-in of the polishing pad when the preset threshold value of the polishing torque is detected. That is, in fig. 4 and 5, the corresponding ym value when z=100% is 2.45, and the running-in end point of the grinding machine in fig. 5 is different from the number of the warming-up pieces consumed by the running-in end point in fig. 4 and the machine running time, so it can be seen that the method of running the polishing pad by adopting the preset number of the warming-up pieces or the preset time in the conventional technology cannot perform accurate end point detection, and the running-in effect and efficiency of the polishing pad are worse than those of the present disclosure.
Referring to fig. 4 and 5, referring to the study of the relationship between the number of real-time consumed warming sheets of the polishing pad to be detected, the polishing torque and the cleaning degree of the warming sheets in the above embodiment, the corresponding threshold range of the polishing torque may be set to 2.3n·m-2.5n·m. Specifically, the corresponding threshold range of the grinding torque may be 2.3n·m, 2.4n·m, 2.5n·m, or the like.
As an example, if the value of the target parameter in the real-time detection parameter reaches the corresponding threshold range, the corresponding target consumed warm-up sheet number is obtained according to the real-time consumed warm-up sheet number of the polishing pad to be detected, the functional relationship between the target parameter and the warm-up sheet cleaning degree, and the value of the target parameter. Specifically, when the target parameter reaches the preset threshold range, the grinder is controlled to stop grinding the mask pad and obtain the corresponding target number of consumed warmup sheets, and the target number of consumed warmup sheets consumed by different grinding pads is generally different.
For example, referring to fig. 4 and 5, the target consumed warm-up pieces of the polishing pad to be detected are different. Therefore, in the endpoint detection method provided by the disclosure, the adopted automatic control grinding pad running-in endpoint is more accurate, so that the consumption of a warming sheet is saved, and the monitoring of a machine by manpower is reduced.
As an example, according to the initial consumed number of warming-up sheets, the initial grinding torque sample and the initial warming-up sheet cleaning degree sample, data fitting or neural network training is performed, so as to obtain a functional relationship between the real-time consumed number of warming-up sheets, the grinding torque and the warming-up sheet cleaning degree of the grinding pad to be detected.
As an example, the step of detecting in real time that the value of the target parameter is higher than the corresponding threshold range further comprises: if the number of the real-time consumed warming pieces reaches the corresponding threshold range of the number of the warming pieces, controlling the grinding machine to stop grinding the warming pieces and judging that the grinding pad to be detected meets the preset requirement; otherwise, the grinder is controlled to continuously grind the warm-up sheet. The above steps can stop the operation of the grinding machine platform through the preset threshold range of the number of the warming pieces when the number of the warming pieces consumed in real time reaches the corresponding threshold range of the number of the warming pieces, but the grinding machine platform does not stop grinding the warming pieces yet, so as to prevent and avoid the situation that grinding cannot be stopped after the grinding machine platform, the control system or other related modules break down, and the endpoint detection method adopted by the disclosure is more guaranteed.
As an example, another aspect of the disclosure further provides an endpoint detection apparatus, including an acquisition module and a control module. The acquisition module is used for acquiring an intelligent detection trigger instruction; the control module is used for responding to the intelligent detection triggering instruction, controlling the grinding machine to automatically grind the warming sheet, acquiring the value of the real-time detection parameter of the grinding pad to be detected on the grinding machine, and controlling the grinding machine to stop grinding the warming sheet and judge that the grinding pad to be detected meets the preset requirement if the value of the target parameter in the real-time detection parameter reaches the corresponding threshold range, otherwise, controlling the grinding machine to continuously grind the warming sheet.
In the end point detection device, the control module can control the grinder to grind the warm-up sheet, acquire the value of the target parameter in real time, control the grinder to stop grinding when the target parameter reaches the corresponding threshold range, and continuously control the grinder to grind the warm-up sheet until the target parameter reaches the threshold range if the target parameter does not reach the corresponding threshold. The end point detection device can stop grinding when the roughness of the grinding pad just reaches the wafer cleaning standard, so that uneven distribution residues on the surface of the wafer can not be caused when the grinding pad cleans the wafer, and the wafer cleaning degree is not enough, and the follow-up process is not affected. The end point detection device can solve the problem that no targeted end point is set for running-in of the grinding pad in the traditional technology, can save consumption of a warm-up sheet and running loss of a grinding machine, can also save time, enables the running-in of the grinding pad to be matched with the end point of the grinding machine when reaching a preset standard, and improves the efficiency of semiconductor preparation.
Although the steps in the flowchart of fig. 3 are shown in order as indicated by the arrows, these steps are not necessarily performed in order as indicated by the arrows. The steps are not strictly limited to the order of execution unless explicitly recited herein, and the steps may be executed in other orders. Moreover, while at least a portion of the steps in FIG. 3 may include multiple sub-steps or stages that are not necessarily performed at the same time, but may be performed at different times, the execution of the sub-steps or stages in turn is not necessarily performed in turn, but may be performed alternately or alternately with at least a portion of the sub-steps or stages of other steps or other steps.
As an example, the real-time detection parameter includes at least one of a number of real-time consumed warming pieces, a grinding torque, a flow rate of the cleaning liquid, a vacuum pressure, and a rotation torque; the target parameter includes grinding torque. The real-time detection parameter is a parameter related to the running-in process of the grinding machine to the grinding pad, and the number of the real-time consumed warming-up pieces is increased along with the running-in time of the grinding pad; the flow rate of the cleaning liquid is increased along with the increase of the running-in time of the grinding pad, and the cleaning liquid is matched with the grinding pad to polish the surface of the wafer back and forth, so that the effect of removing the residual particle products and some byproducts brought by the grinding part is realized; the vacuum pressure presses the polishing pad on the wafer and simultaneously reciprocates with the spraying of the cleaning liquid, specifically, the vacuum pressure can be 11lbf (pound force) -13lbf, for example, the vacuum pressure can be 11lbf, 12lbf or 13lbf, etc.; the rotation torque is the torque generated by the rotation of the polishing pad. The target parameters comprise grinding torque, wherein the grinding torque is torque generated by wafer rotation, and when a grinding machine starts to grind a grinding pad, if the value of the grinding torque reaches a corresponding threshold range, the grinding machine stops grinding a warming-up sheet; if the grinding torque value does not reach the corresponding threshold range, the grinding machine continues to circularly grind the warming sheet and judges whether the grinding torque value reaches the corresponding threshold range.
As an example, the real-time detection parameter further includes a torque of the polishing pad reciprocating motion, specifically, the polishing pad reciprocates on a line with a polishing range of 30mm to 140mm from the center of the circle of the wafer, and a corresponding torque is generated during the reciprocation.
As an example, the polishing pad to be detected is a polishing pad that is replaced after maintenance of the polishing machine. After the polishing pad reaches the service life and is replaced again, the roughness of the contact surface of the new polishing pad and the wafer generally does not reach the preset requirement, so that the polishing pad replaced again after the maintenance of the polishing table needs to be worn in.
As an example, the acquisition module further comprises the steps for acquiring the target parameters as follows: acquiring different types of real-time detection parameters and time sequence data of the real-time consumption warming-up piece quantity and the warming-up piece cleaning degree of the polishing pad to be detected respectively; and determining the target parameters according to the change trend of the time sequence data. Specifically, time series data of grinding torque, flow rate of cleaning liquid, vacuum pressure and autorotation torque, the number of real-time consumed warming pieces of the grinding pad to be detected and the cleaning degree of the warming pieces are respectively obtained; several groups of different time series data are obtained, a target parameter is determined according to the change trend, and a preset threshold range of the target parameter is set for detecting the running-in end point of the polishing pad.
As an example, the corresponding threshold range of the grinding torque may be set to 2.3n·m to 2.5n·m. Specifically, the corresponding threshold range of the grinding torque may be 2.3n·m, 2.4n·m, 2.5n·m, or the like.
As an example, the control module is further configured to: if the number of real-time consumed warming pieces reaches the corresponding threshold range of the number of warming pieces, controlling the grinding machine to stop grinding the warming pieces and judging that the grinding pad to be detected meets the preset requirement; otherwise, the grinder is controlled to continuously grind the warm-up sheet. So as to prevent and avoid the situation that grinding cannot be stopped after the grinding machine, the control system or other related modules are failed, avoid the phenomenon that the process is wrong or cannot be stopped, and improve the production efficiency.
As an example, a further aspect of the present disclosure also provides a computer program product having a computer program stored thereon, which, when executed by a processor, implements the steps of the method according to any of the embodiments of the present disclosure.
According to the end point detection method and device, the grinding machine is controlled to stop grinding the warm-up sheet by acquiring and judging that the value of the target parameter in the real-time detection parameter reaches the threshold range, so that the grinding machine can be accurately positioned to the moment when the grinding pad just meets the preset requirement, and the grinding of the grinding pad is stopped, the process time is saved, the consumption of the warm-up sheet is reduced, the labor cost, the time cost and the economic cost are saved, the particle concentric circle pattern remained on the surface during wafer cleaning is removed, the grinding pad is prevented from being ground by adopting the preset number of warm-up sheets or the preset time, and the roughness of the grinding pad can not be guaranteed to just meet the standard of wafer cleaning; the work of the grinder platform can be stopped through the preset threshold range of the number of the warm-up sheets when the number of the warm-up sheets consumed in real time reaches the corresponding threshold range of the number of the warm-up sheets, but the grinder platform does not stop grinding the warm-up sheets yet, so that the end point detection method adopted by the disclosure is more guaranteed.
Those skilled in the art will appreciate that implementing all or part of the above described methods may be accomplished by way of a computer program stored on a non-transitory computer readable storage medium, which when executed, may comprise the steps of the embodiments of the methods described above. Any reference to memory, storage, database, or other medium used in embodiments provided by the present disclosure may include non-volatile and/or volatile memory.
Note that the above embodiments are for illustrative purposes only and are not meant to limit the present disclosure.
In this specification, each embodiment is described in a progressive manner, and each embodiment is mainly described by differences from other embodiments, and identical and similar parts between the embodiments are all enough to be referred to each other.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The foregoing examples represent only a few embodiments of the present disclosure, which are described in more detail and detail, but are not to be construed as limiting the scope of the disclosure. It should be noted that variations and modifications can be made by those skilled in the art without departing from the spirit of the disclosure, which are within the scope of the disclosure. Accordingly, the scope of protection of the present disclosure should be determined by the following claims.
Claims (17)
1. An endpoint detection method, comprising:
Acquiring an intelligent detection trigger instruction;
responding to the intelligent detection triggering instruction, and controlling a grinder to automatically grind the warming sheet; and
And acquiring a value of a real-time detection parameter of the polishing pad to be detected on the polishing machine, if the value of a target parameter in the real-time detection parameter reaches a corresponding threshold range, controlling the polishing machine to stop polishing the warming sheet and judging that the polishing pad to be detected meets a preset requirement, otherwise, controlling the polishing machine to continuously polish the warming sheet.
2. The endpoint detection method according to claim 1, wherein the real-time detection parameters include at least one of a number of real-time consumed warming-up sheets, a polishing torque, a flow rate of cleaning liquid, a vacuum pressure, and a rotation torque; the target parameter includes grinding torque.
3. The endpoint detection method of claim 2, wherein the polishing pad to be detected is a polishing pad that is replaced after maintenance of the polishing platen.
4. The endpoint detection method of any one of claims 1-3, further comprising the step of obtaining the target parameter as follows:
Acquiring different types of real-time detection parameters and time sequence data of the real-time consumption warming-up sheet quantity and the warming-up sheet cleaning degree of the polishing pad to be detected respectively;
and determining the target parameters according to the change trend of the time sequence data.
5. The endpoint detection method according to claim 4, wherein the determining the target parameter according to the trend of the time series data comprises the steps of:
and acquiring a corresponding real-time detection parameter with the minimum irregular fluctuation coefficient value in the time sequence data as a target parameter.
6. The endpoint detection method of claim 5, further comprising, after determining the target parameter:
and acquiring a functional relation of the number of the real-time consumed warming pieces of the polishing pad to be detected, a target parameter and the cleaning degree of the warming pieces.
7. The method according to claim 6, wherein if the value of the target parameter in the real-time detection parameter reaches the corresponding threshold range, the corresponding number of consumed warm-up slices is obtained according to the function relation and the value of the target parameter.
8. The method of claim 6, wherein the number of consumed hot plates is different for different polishing pads to be detected.
9. The method of claim 6, wherein the functional relationship is obtained by performing data fitting or neural network training based on an initial consumption of a number of warm-up slices, an initial grinding torque and an initial warm-up slice cleaning level.
10. The endpoint detection method of claim 6, wherein the value of the target parameter among the real-time detection parameters is higher than a corresponding threshold range, further comprising:
If the number of the real-time consumed warming pieces reaches the corresponding threshold range of the number of the warming pieces, controlling the grinding machine to stop grinding the warming pieces and judging that the grinding pad to be detected meets the preset requirement;
otherwise, the grinding machine is controlled to continuously grind the warming sheet.
11. An endpoint detection apparatus, comprising:
the acquisition module is used for acquiring the intelligent detection trigger instruction;
the control module is used for responding to the intelligent detection triggering instruction and controlling the grinding machine to automatically grind the warming sheet; and
And acquiring a value of a real-time detection parameter of the polishing pad to be detected on the polishing machine, if the value of a target parameter in the real-time detection parameter reaches a corresponding threshold range, controlling the polishing machine to stop polishing the warming sheet and judging that the polishing pad to be detected meets a preset requirement, otherwise, controlling the polishing machine to continuously polish the warming sheet.
12. The end point detection device of claim 11, wherein the real-time detection parameters include at least one of a number of real-time consumed warming-up pieces, a polishing torque, a flow rate of cleaning liquid, a vacuum pressure, and a rotation torque; the target parameter includes grinding torque.
13. The endpoint detection apparatus according to claim 12, wherein the polishing pad to be detected is a polishing pad that is replaced after maintenance of the polishing platen.
14. The endpoint detection apparatus of any one of claims 11-13, wherein the acquisition module further comprises a step for acquiring the target parameter as follows:
Acquiring different types of real-time detection parameters and time sequence data of the real-time consumption warming-up sheet quantity and the warming-up sheet cleaning degree of the polishing pad to be detected respectively;
and determining the target parameters according to the change trend of the time sequence data.
15. The endpoint detection apparatus of claim 14, wherein the control module further comprises:
And the functional relation acquisition module is used for acquiring the functional relation between the number of the real-time consumed warming pieces of the polishing pad to be detected, the polishing torque and the cleaning degree of the warming pieces.
16. The endpoint detection apparatus of claim 15, wherein the control module is further configured to:
If the number of the real-time consumed warming pieces reaches the corresponding threshold range of the number of the warming pieces, controlling the grinding machine to stop grinding the warming pieces and judging that the grinding pad to be detected meets a preset requirement; otherwise, the grinding machine is controlled to continuously grind the warming sheet.
17. A computer program product having a computer program stored thereon, which, when executed by a processor, implements the steps of the method according to any of claims 1 to 10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211311634.XA CN117943967A (en) | 2022-10-21 | 2022-10-21 | Endpoint detection method, device and computer program |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211311634.XA CN117943967A (en) | 2022-10-21 | 2022-10-21 | Endpoint detection method, device and computer program |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117943967A true CN117943967A (en) | 2024-04-30 |
Family
ID=90793304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211311634.XA Pending CN117943967A (en) | 2022-10-21 | 2022-10-21 | Endpoint detection method, device and computer program |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117943967A (en) |
-
2022
- 2022-10-21 CN CN202211311634.XA patent/CN117943967A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100701356B1 (en) | A method and system for polishing semiconductor wafers | |
| US7210988B2 (en) | Method and apparatus for reduced wear polishing pad conditioning | |
| US6872132B2 (en) | Systems and methods for monitoring characteristics of a polishing pad used in polishing micro-device workpieces | |
| US11894235B2 (en) | Semiconductor manufacturing device and method of polishing semiconductor substrate | |
| US20080031510A1 (en) | Method of and apparatus for inspecting wafers in chemical mechanical polishing equipment | |
| EP0822033A1 (en) | Slurry recycling in chemical-mechanical polishing (CMP) apparatus | |
| Fury | Emerging developments in CMP for semiconductor planarization | |
| US7366575B2 (en) | Wafer polishing control | |
| CN113853275B (en) | Substrate processing system | |
| CN103394994A (en) | Method for polishing wafers | |
| CN111146116B (en) | Wafer cleaning method and wafer post-processing device | |
| US20220410343A1 (en) | Substrate cleaning apparatus, polishing apparatus, buffing apparatus, substrate cleaning method, substrate processing apparatus, and machine learning apparatus | |
| CN117943967A (en) | Endpoint detection method, device and computer program | |
| US6665623B1 (en) | Method and apparatus for optimizing downstream uniformity | |
| US20080182490A1 (en) | Method and system for pad conditioning in an ecmp process | |
| US6754593B1 (en) | Method and apparatus for measuring defects | |
| US20050287927A1 (en) | Method to monitor pad wear in CMP processing | |
| CN112355886A (en) | Chemical mechanical polishing machine, method and defect detection method | |
| TW202012109A (en) | Polishing method and polishing system | |
| US20080203352A1 (en) | Formulation of grinding coolant | |
| US20220395874A1 (en) | Substrate cleaning device, substrate processing apparatus, break-in device, method for estimating number of fine particles adhering to substrate, method for determining degree of contamination of substrate cleaning member, and method for determining break-in processing | |
| CN100537142C (en) | Device and method for cleaning chemical and mechanical polishing equipment | |
| TW201834786A (en) | Substrate polishing device and substrate polishing method | |
| CN114012604B (en) | Method, system, electronic equipment and storage medium for cleaning polishing pad | |
| US7699972B2 (en) | Method and apparatus for evaluating polishing pad conditioning |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination |