CN117929862A - Near field probe and near field probe device - Google Patents
Near field probe and near field probe device Download PDFInfo
- Publication number
- CN117929862A CN117929862A CN202410335229.4A CN202410335229A CN117929862A CN 117929862 A CN117929862 A CN 117929862A CN 202410335229 A CN202410335229 A CN 202410335229A CN 117929862 A CN117929862 A CN 117929862A
- Authority
- CN
- China
- Prior art keywords
- signal transmission
- metal frame
- transmission layer
- near field
- field probe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000523 sample Substances 0.000 title claims abstract description 68
- 230000008054 signal transmission Effects 0.000 claims abstract description 112
- 239000002184 metal Substances 0.000 claims abstract description 110
- 238000001514 detection method Methods 0.000 claims abstract description 64
- 230000035945 sensitivity Effects 0.000 claims abstract description 11
- 230000005672 electromagnetic field Effects 0.000 claims description 12
- 230000005684 electric field Effects 0.000 claims description 10
- 230000006698 induction Effects 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 238000013461 design Methods 0.000 description 11
- 230000005540 biological transmission Effects 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 9
- 238000004458 analytical method Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- ZXQYGBMAQZUVMI-GCMPRSNUSA-N gamma-cyhalothrin Chemical compound CC1(C)[C@@H](\C=C(/Cl)C(F)(F)F)[C@H]1C(=O)O[C@H](C#N)C1=CC=CC(OC=2C=CC=CC=2)=C1 ZXQYGBMAQZUVMI-GCMPRSNUSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000011895 specific detection Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Landscapes
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The application discloses a near field probe and a near field detection device. The near-field probe comprises a first shielding layer, a first signal transmission layer, a second signal transmission layer and a second shielding layer which are sequentially stacked, wherein the first signal transmission layer comprises a first signal transmission part and a first detection part, the first detection part comprises a first U-shaped metal frame arranged below the first signal transmission part, the second signal transmission layer comprises a second signal transmission part and a second detection part, the second detection part comprises a second U-shaped metal frame arranged below the second signal transmission part, and the first U-shaped metal frame and the second U-shaped metal frame are connected through a metal connecting piece to form a rectangular metal frame with preset characteristic impedance. According to the embodiment of the application, the electromagnetic components in different directions can be measured simultaneously by the rectangular detection metal frame formed by the two semi-naked U-shaped detection structures and the two coaxial through holes at the connecting edge, so that the sensitivity and the detection efficiency of the near-field probe are improved.
Description
Technical Field
The invention relates to the technical field of electromagnetic detection, in particular to a near-field probe and a near-field detection device.
Background
With the development of electronic manufacturing technologies such as integrated circuit technology, chips and circuit boards are developed toward high integration and high speed, and with the improvement of chip integration, the number of components per unit area in a chip is increasing. Resulting in an increasingly complex electromagnetic environment around the chip. In order to detect the electromagnetic reliability of the chip, it is necessary to capture the electromagnetic signal emitted from the chip for reliability analysis. Therefore, how to detect the electromagnetic signal emitted by the chip is a problem to be solved at present.
The near field probe is used as one of the most important components of the near field scanning system, and the performance of the near field probe directly determines the application scene of the scanning system. In order to ensure the reliability of the IC chip, the product must pass the relevant electromagnetic compatibility standard before being marketed. The near field scanning technology has great advantages and potential in the field of IC electromagnetic interference measurement, but the applicant finds that the high-performance near field probe commercially available in the market at present has the problems of low test efficiency, poor sensitivity and the like, and is not suitable for electromagnetic interference measurement of modern ICs.
Disclosure of Invention
The invention provides a near-field probe and a near-field detection device, which are characterized in that a rectangular detection metal frame is formed by two U-shaped detection structures with semi-naked leaks and two coaxial through holes at the connecting edge, so that electromagnetic components in different directions can be measured simultaneously, and the sensitivity and detection efficiency of the near-field probe are improved.
In order to achieve the beneficial effects, the embodiment of the invention provides the following technical scheme:
in a first aspect, a near field probe is provided, including a first shielding layer, a first signal transmission layer, a second signal transmission layer, and a second shielding layer stacked in sequence;
the first signal transmission layer comprises a first signal transmission part and a first detection part, and the first detection part comprises a first U-shaped metal frame arranged below the first signal transmission part;
The second signal transmission layer comprises a second signal transmission part and a second detection part, and the second detection part comprises a second U-shaped metal frame arranged below the second signal transmission part;
the first U-shaped metal frame and the second U-shaped metal frame are connected through metal connecting pieces to form a rectangular metal frame with preset characteristic impedance.
In an embodiment, the two corners of the first U-shaped metal frame are respectively provided with a first through hole and a second through hole, the two corners of the second U-shaped metal frame are respectively provided with a third through hole and a fourth through hole, the first through hole and the third through hole are coaxial and are connected through a metal connecting piece, and the second through hole and the fourth through hole are coaxial and are connected through a metal connecting piece.
In an embodiment, the first U-shaped metal frame and the second U-shaped metal frame are connected to the first signal transmission portion and the second signal transmission portion through two microwave ports, respectively, so as to perform signal input.
In an embodiment, the rectangular metal frame is used for measuring three electromagnetic field components of Hx, hy and Ez, wherein an electric field in the z direction is transmitted to four microwave ports through detection metal, a magnetic field in the x direction captures magnetic induction lines in the x direction through two U-shaped loops which are bilaterally symmetrical, and a magnetic field component in the y direction captures magnetic induction lines in the y direction through two U-shaped loops which are bilaterally symmetrical.
In an embodiment, a noise amplifier is further included for amplifying the electromagnetic signal to increase the sensitivity of the near field probe by 14dB.
In one embodiment, the rogers dielectric material is filled between the first shielding layer and the first signal transmission layer, between the first signal transmission layer and the second signal transmission layer, and between the second signal transmission layer and the second shielding layer.
In an embodiment, the first shielding layer, the first signal transmission layer, the second signal transmission layer and the second shielding layer are all metal layers with the thickness of 0.035mm, an RO4350B laminated board with the thickness of 0.17mm is filled between the first shielding layer and the first signal transmission layer, an RO4450F bonding sheet with the thickness of 0.182mm is filled between the first signal transmission layer and the second signal transmission layer, and an RO4350B laminated board with the thickness of 0.17mm is filled between the second signal transmission layer and the second shielding layer.
In one embodiment, the rectangular metal frame is in a cube shape with a length, width and height of 1 mm.
In an embodiment, the rectangular metal frame is located at the periphery of the first shielding layer, the first signal transmission layer, the second signal transmission layer and the second shielding layer, and the preset characteristic impedance of the rectangular metal frame is 50Ω.
In a second aspect, please provide a near field probe apparatus, comprising:
A near field probe as described above;
and the analyzer is respectively connected with the first signal transmission layer and the second signal transmission layer, and is used for receiving a plurality of electromagnetic field components in different directions and analyzing the electromagnetic field components.
The near-field probe comprises a first shielding layer, a first signal transmission layer, a second signal transmission layer and a second shielding layer which are sequentially stacked, wherein the first signal transmission layer comprises a first signal transmission part and a first detection part, the first detection part comprises a first U-shaped metal frame arranged below the first signal transmission part, the second signal transmission layer comprises a second signal transmission part and a second detection part, the second detection part comprises a second U-shaped metal frame arranged below the second signal transmission part, and the first U-shaped metal frame and the second U-shaped metal frame are connected through a metal connecting piece to form a rectangular metal frame with preset characteristic impedance. According to the embodiment of the application, the electromagnetic components in different directions can be measured simultaneously by the rectangular detection metal frame formed by the two semi-naked U-shaped detection structures and the two coaxial through holes at the connecting edge, so that the sensitivity and the detection efficiency of the near-field probe are improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of a first structure of a near field probe according to an embodiment of the present invention;
FIG. 2 is a schematic illustration of electromagnetic component measurement of a near field probe provided by an embodiment of the present invention;
FIG. 3 is a schematic diagram of a second structure of a near field probe according to an embodiment of the present invention;
Fig. 4 is a schematic structural diagram of a first signal transmission layer according to an embodiment of the present invention;
Fig. 5 is a schematic structural diagram of a second signal transmission layer according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to fall within the scope of the invention.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the invention. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of skill in the art will explicitly and implicitly appreciate that the embodiments described herein may be combined with other embodiments.
Before describing the technical scheme of the invention, related technical terms are briefly explained:
IC: INTEGRATED CIRCUIT integrated circuit chips mainly comprise MCU, FPGA, CPU and other mainstream chips.
NEAR FIELD Probe: near field probes, an effective tool for electromagnetic interference of "non-invasive" measurement, are commonly used for electromagnetic interference diagnosis of a circuit under test, shielding effectiveness analysis of materials, trojan detection of a chip, and the like.
In an embodiment, the near field probe mainly comprises a signal transmission portion and an electromagnetic field detection portion, referring to fig. 1 specifically, fig. 1 is a schematic structural diagram of the near field probe according to an embodiment of the present invention. The near-field probe is manufactured by a four-layer PCB process and comprises three layers of high-performance Rogowski dielectric materials (such as RO4350B and RO 4450F) and four layers of metal layers 10, wherein the metal layers 10 specifically comprise a first shielding layer, a first signal transmission layer, a second signal transmission layer and a second shielding layer which are sequentially stacked, wherein the first shielding layer and the second shielding layer are respectively arranged on a top layer and a bottom layer and are used for shielding influences of external interference signals on a first radio frequency signal and a second radio frequency signal in transmission, namely, shielding influences of the external interference signals on a transmission line.
The first signal transmission layer includes a first signal transmission portion and a first detection portion, the first detection portion includes a first U-shaped metal frame 122 disposed below the first signal transmission portion, the second signal transmission layer includes a second signal transmission portion and a second detection portion, the second detection portion includes a second U-shaped metal frame 132 disposed below the second signal transmission portion, and the first U-shaped metal frame 122 and the second U-shaped metal frame 132 are connected through two metal connectors 15 to form a rectangular metal frame with a preset characteristic impedance.
In an embodiment, the first detecting portion and the second detecting portion may be disposed on a silicon-based probe, where the silicon-based probe may be a wafer. Wafer refers to a silicon wafer used in the fabrication of silicon semiconductor integrated circuits, the starting material of which is silicon. The high-purity polysilicon is dissolved and then doped with silicon crystal seed, and then slowly pulled out to form cylindrical monocrystalline silicon. The silicon wafer formed by grinding, polishing and slicing the silicon crystal bar is the wafer. That is, the first and second probe portions may be designed on a wafer, and electromagnetic components of the test piece may be measured by the first and second U-shaped metal frames thereon.
In one embodiment, the first U-shaped metal frame and the second U-shaped metal frame can obtain the magnetic field signal of the to-be-measured piece according to the change measurement of the magnetic flux inside the first U-shaped metal frame and the second U-shaped metal frame after the detection loop is connected. In addition, when the to-be-detected piece is in a high-frequency working state, the detection coil is close to the to-be-detected piece at the moment, a distributed capacitor is formed between the first U-shaped metal frame and the second U-shaped metal frame and the to-be-detected piece, and therefore an electric field signal of the to-be-detected piece is obtained according to distributed capacitive coupling with the to-be-detected piece. Because a very small detection loop can be designed on the wafer, the sensitivity of the near-field probe can be effectively improved, and the spatial resolution can be effectively improved. The first signal transmission part and the second signal transmission part are subjected to reasonable design and impedance control, and the measured electric field signals and magnetic field signals are separated and transmitted to the corresponding ports so as to transmit electromagnetic signals, so that the loss and reflection of the electromagnetic signals in the transmission process can be ensured to be low, and the external interference can be shielded.
In one embodiment, the silicon-based probe may be flip-chip bonded to the first signal transmission layer and the second signal transmission layer. Flip-chip technology refers to a technology that directly interconnects an IC chip face down with a package housing or wiring substrate. Compared with other chip interconnection technologies, the flip-chip interconnection line is short, parasitic capacitance and parasitic inductance are small, and the I/O electrode of the chip can be arranged on the surface of the chip at will, so that the packaging density is high, and the flip-chip interconnection line is more suitable for integrated circuits with high frequency, high speed and high I/O ends.
In an embodiment, with continued reference to fig. 1, a first through hole and a second through hole are respectively disposed at two corners of the first U-shaped metal frame 122, a third through hole and a fourth through hole are respectively disposed at two corners of the second U-shaped metal frame 132, the first through hole and the third through hole are coaxial and are connected by the metal connecting piece 15, and the second through hole and the fourth through hole are coaxial and are connected by the metal connecting piece 15.
In an embodiment, the first U-shaped metal frame 122 and the second U-shaped metal frame 132 may be connected to the first signal transmission portion and the second signal transmission portion through two microwave ports, respectively, for signal input. The four microwave ports are adopted for output, so that the structural symmetry of the near-field probe can be improved, and meanwhile, the values of three electromagnetic field components can be effectively resolved.
Specifically, referring to fig. 2, fig. 2 is a schematic electromagnetic component measurement diagram of a near-field probe, where a rectangular metal frame formed by the first U-shaped metal frame 122 and the second U-shaped metal frame 132 may be used to measure three electromagnetic field components of Hx, hy and Ez, where an electric field in the z direction is transmitted to four microwave ports through detection metal, a magnetic field in the x direction captures magnetic induction lines in the x direction through two U-shaped loops that are symmetric left and right, and a magnetic field component in the y direction captures magnetic induction lines in the y direction through two U-shaped loops that are symmetric front and back.
In an embodiment, the near field probe may further include a noise amplifier 20, and the noise amplifier 20 may be disposed at a top end of the near field probe and connected to the first signal transmission layer and the second signal transmission layer for amplifying the electromagnetic signal to increase the sensitivity of the near field probe by 14dB. For example, an HMC460 low noise distributed amplifier may be employed, the HMC460 chip being a high electron mobility field effect transistor (PHEMT) low noise distributed amplifier. The chip operating frequency range is DC to 20 GHz, providing a gain of 14dB and a noise figure of 2.5 dB.
In one embodiment, please continue to refer to fig. 3, the rojies dielectric material is filled between the first shielding layer 11 and the first signal transmission layer 12, between the first signal transmission layer 12 and the second signal transmission layer 13, and between the second signal transmission layer 13 and the second shielding layer 14.
Further, the first shielding layer 11, the first signal transmission layer 12, the second signal transmission layer 13 and the second shielding layer 14 are metal layers with the thickness of 0.035mm, an RO4350B laminated board with the thickness of 0.17mm can be filled between the first shielding layer 11 and the first signal transmission layer 12, an RO4450F bonding sheet with the thickness of 0.182mm can be filled between the first signal transmission layer 12 and the second signal transmission layer 13, and an RO4350B laminated board with the thickness of 0.17mm can be filled between the second signal transmission layer 13 and the second shielding layer 14.
In an embodiment, the first shielding layer 11, the first signal transmission layer 12, the second signal transmission layer 13, and the second shielding layer 14 are all irregularly shaped circuit boards, and the shapes and sizes of the four circuit boards are the same. The first shielding layer 11, the first signal transmission layer 12, the second signal transmission layer 13 and the second shielding layer 14 are respectively provided with a plurality of signal through holes, and the positions of the signal through holes arranged on each layer correspond to each other. The signal via hole is a through hole penetrating through the layer where the signal via hole is located, and can be used for realizing interconnection among all layers, and a layer of metal can be plated on the hole wall by using a chemical deposition method to play a role of electric connection, namely the conductive hole walls in the embodiment are all metal hole walls, and all layers are insulated except electric interconnection through the conductive hole walls.
In other embodiments, the PCT board may also be a circuit board manufactured by LTCC process. Compared with other integration technologies, the circuit board prepared by the LTCC technology has the following advantages: the ceramic material has excellent high-frequency, high-speed transmission and wide passband characteristics. According to different ingredients, the dielectric constant of the LTCC material can be changed in a large range, and the metal material with high conductivity is used as the conductor material in a matching way, so that the quality factor of a circuit system can be improved, and the flexibility of circuit design is improved. The LTCC circuit substrate can meet the requirements of high current and high temperature resistance, has better heat conductivity than the common PCB circuit substrate, and greatly optimizes the heat dissipation design of electronic equipment. The circuit board prepared by adopting the LTCC technology can ensure transmission impedance matching, inhibit signal attenuation and transmission resonance and ensure electric field detection efficiency.
In an embodiment, the first U-shaped metal frame 122 is connected to the first signal transmission portion 121 to form a first detection loop, as shown in fig. 4, where two corners of the first U-shaped metal frame 122 are respectively provided with a first through hole 151 and a second through hole 152, and a top of the first signal transmission portion 121 is connected to the first input port 21 and the second input port 22 of the noise amplifier.
Correspondingly, the second U-shaped metal frame 132 and the second signal transmission portion 131 are connected to form a second detection loop, as shown in fig. 5, where, in two corners of the second U-shaped metal frame 132, a third through hole 153 and a fourth through hole 154 are respectively disposed, and the top of the second signal transmission portion 131 is connected to the third input port 23 and the fourth input port 24 of the noise amplifier. The first through hole 151 and the third through hole 153 are coaxial and can be connected by a metal connecting piece, and the second through hole 152 and the fourth through hole 254 are coaxial and can be connected by a metal connecting piece, so as to form the rectangular metal frame, wherein when the length, width and height of the rectangular metal frame are all 1mm, the rectangular metal frame is a cube frame with a side length of 1 mm.
In one embodiment, the first U-shaped metal frame 122 or the second U-shaped metal frame 132 may be fabricated on the silicon-based probe by etching techniques, such as forming a U-shaped metal coil on the silicon-based probe. Alternatively, different shaped metal coils can be formed on the silicon-based probe using etching techniques as desired by the design. Further, the first detecting coil 122 or the second detecting coil 132 may also have different shapes and sizes.
In one embodiment, the rectangular metal frame structure formed by the first U-shaped metal frame 122 and the second U-shaped metal frame 132 is located at the periphery 14 of the first shielding layer 11, the first signal transmission layer 12, the second signal transmission layer 13 and the second shielding layer. Electromagnetic components in different directions can be measured simultaneously through a semi-exposed rectangular metal frame, so that the sensitivity and detection efficiency of the near-field probe are improved.
In other embodiments, the region corresponding to the first U-shaped metal frame 122 is a first sensing region, and the region corresponding to the second U-shaped metal frame 132 is a second sensing region, and further, the orthographic projection of the second sensing region on the plane of the first sensing region is within the range of the first magnetic field sensing region. Since the orthographic projection of the first detection coil 122 on the plane on which the second detection coil 132 is located is within the range of the second detection coil 132, the area of the first detection coil 122 and the area of the second detection coil 132 can be overlapped, the measured magnetic field signal can be overlapped, and the amplitude of the measured magnetic field signal can be increased.
Meanwhile, the area surrounded by the first U-shaped metal frame 122 is the same as the area surrounded by the second U-shaped metal frame 132, the central axes are arranged in a collinear manner, the gain on the electric field signal is larger, and the amplitude of the measured electric field signal is larger. Therefore, the measured electric field signal and the measured magnetic field signal are subjected to larger gain and larger amplitude, and the electric field signal and the magnetic field signal with lower frequency can be measured.
In an embodiment, the first U-shaped metal frame 122 and the second U-shaped metal frame 132 may have a reasonable design line width to make the characteristic impedance of the formed rectangular loop structure be 50Ω, so as to ensure low loss and low reflection of the near signal during transmission. In practical applications, the first U-shaped metal frame 122 and the second U-shaped metal frame 132 may be designed into different shapes according to specific detection requirements, so as to obtain different shapes of the sensing area.
In one embodiment, the characteristic impedance is 50Ω, which can improve the transmission efficiency of the probe. The impedance is affected by the spacing between layers, the size of the wires, the materials, etc., and can be calculated by some well-established commercial software to calculate the design required by the spacing between layers, the size of the wires, the materials, etc. under the preset impedance. The characteristic impedance of the loop structure of the multi-turn coil is 50 omega through reasonable design. Since the characteristic impedance of the peripheral analysis device is generally 50 Ω, the characteristic impedance is selected to be 50 Ω in the embodiment, so that impedance matching with the peripheral analysis device is facilitated, and low signal loss and low signal reflection in the transmission process are ensured.
In one embodiment, the near field probe may have a spatial resolution of 75-85 um. The application frequency range of the near-field probe provided by the invention is determined by the overall design of the near-field probe, including the application of materials and the design of structures, and the frequency application range of the near-field probe can be calibrated by a certain method. In this embodiment, the detection spatial resolution of the near-field probe is 80um and the detection sensitivity of the near-field probe is-25 dB [ A/m ] according to the detection structure designed on the wafer and the transmission structure designed on the substrate.
As can be seen from the above, the near-field probe provided in the embodiment of the present application includes a first shielding layer, a first signal transmission layer, a second signal transmission layer and a second shielding layer that are stacked in sequence, where the first signal transmission layer includes a first signal transmission portion and a first detection portion, the first detection portion includes a first U-shaped metal frame disposed below the first signal transmission portion, the second signal transmission layer includes a second signal transmission portion and a second detection portion, the second detection portion includes a second U-shaped metal frame disposed below the second signal transmission portion, and the first U-shaped metal frame and the second U-shaped metal frame are connected by a metal connection member, so as to form a rectangular metal frame with a preset characteristic impedance. According to the embodiment of the application, the electromagnetic components in different directions can be measured simultaneously by the rectangular detection metal frame formed by the two semi-naked U-shaped detection structures and the two coaxial through holes at the connecting edge, so that the sensitivity and the detection efficiency of the near-field probe are improved.
The embodiment of the invention also provides a near field detection device, which comprises the near field probe and the analyzer, wherein the analyzer is respectively connected with the first signal transmission layer and the second signal transmission layer and is used for receiving a plurality of electromagnetic field components in different directions and analyzing the electromagnetic field components.
In an embodiment, the analyzer is further configured to perform a simulation analysis on the electromagnetic signal of the near field probe to determine a detection frequency range of the near field probe. The detection frequency range of the near-field probe can be determined through ADS (ADVANCED DESIGN SYSTEM, electronic design automation software) circuit simulation analysis and HFSS (High Frequency Structure Simulator, high-frequency structure simulation) near-field detection electromagnetic field intensity analysis.
Those of ordinary skill in the art will appreciate that all or a portion of the steps of the various methods of the above embodiments may be performed by instructions, or by instructions controlling associated hardware, which may be stored in a computer-readable storage medium and loaded and executed by a processor.
Although the invention has been shown and described with respect to one or more implementations, equivalent alterations and modifications will occur to others skilled in the art based upon a reading and understanding of this specification and the annexed drawings. The present invention includes all such modifications and alterations and is limited only by the scope of the following claims. In particular regard to the various functions performed by the above described components, the terms used to describe such components are intended to correspond, unless otherwise indicated, to any component which performs the specified function of the described component (e.g., that is functionally equivalent), even though not structurally equivalent to the disclosed structure which performs the function in the herein illustrated exemplary implementations of the specification. Furthermore, while a particular feature of the subject specification may have been disclosed with respect to only one of several implementations, such feature may be combined with one or more other features of the other implementations as may be desired and advantageous for a given or particular application. Moreover, to the extent that the terms "includes," has, "" contains, "or variants thereof are used in either the detailed description or the claims, such terms are intended to be inclusive in a manner similar to the term" comprising.
The near field probe and the near field detection device provided by the embodiment of the invention are described in detail. The principles and embodiments of the present invention have been described herein with reference to specific examples, the description of which is intended only to assist in understanding the methods of the present invention and the core ideas thereof; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in light of the ideas of the present invention, the present description should not be construed as limiting the present invention.
Claims (10)
1. The near field probe is characterized by comprising a first shielding layer, a first signal transmission layer, a second signal transmission layer and a second shielding layer which are sequentially stacked;
the first signal transmission layer comprises a first signal transmission part and a first detection part, and the first detection part comprises a first U-shaped metal frame arranged below the first signal transmission part;
The second signal transmission layer comprises a second signal transmission part and a second detection part, and the second detection part comprises a second U-shaped metal frame arranged below the second signal transmission part;
the first U-shaped metal frame and the second U-shaped metal frame are connected through metal connecting pieces to form a rectangular metal frame with preset characteristic impedance.
2. The near field probe of claim 1, wherein a first through hole and a second through hole are respectively disposed at two corners of the first U-shaped metal frame, a third through hole and a fourth through hole are respectively disposed at two corners of the second U-shaped metal frame, the first through hole and the third through hole are coaxial and are connected through a metal connecting piece, and the second through hole and the fourth through hole are coaxial and are connected through a metal connecting piece.
3. The near field probe of claim 1, wherein the first and second U-shaped metal frames connect the first and second signal transmission portions through two microwave ports, respectively, for signal input.
4. A near field probe according to claim 3, wherein the rectangular metal frame is used for measuring three electromagnetic field components of Hx, hy and Ez, wherein an electric field in the z direction is transmitted to four microwave ports by the probe metal, a magnetic field in the x direction captures magnetic induction lines in the x direction by two U-shaped loops which are bilaterally symmetrical, and a magnetic field component in the y direction captures magnetic induction lines in the y direction by two U-shaped loops which are bilaterally symmetrical.
5. The near field probe of claim 1, further comprising a noise amplifier for amplifying electromagnetic signals to increase the sensitivity of the near field probe by 14dB.
6. The near field probe of claim 1, wherein a rogers dielectric material is filled between the first shield layer and the first signal transmission layer, between the first signal transmission layer and the second signal transmission layer, and between the second signal transmission layer and the second shield layer.
7. The near field probe of claim 6, wherein the first shielding layer, the first signal transmission layer, the second signal transmission layer and the second shielding layer are metal layers with a thickness of 0.035mm, an RO4350B laminate with a thickness of 0.17mm is filled between the first shielding layer and the first signal transmission layer, an RO4450F bonding sheet with a thickness of 0.182mm is filled between the first signal transmission layer and the second signal transmission layer, and an RO4350B laminate with a thickness of 0.17mm is filled between the second signal transmission layer and the second shielding layer.
8. The near field probe of claim 1, wherein the rectangular metal frame is in the shape of a cube having a length, width and height of 1 mm.
9. The near field probe of claim 1, wherein the rectangular metal frame is located at the periphery of the first shielding layer, the first signal transmission layer, the second signal transmission layer and the second shielding layer, and the preset characteristic impedance of the rectangular metal frame is 50Ω.
10. A near field probe apparatus, comprising:
the near field probe of any one of claims 1-9;
and the analyzer is respectively connected with the first signal transmission layer and the second signal transmission layer, and is used for receiving a plurality of electromagnetic field components in different directions and analyzing the electromagnetic field components.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410335229.4A CN117929862A (en) | 2024-03-22 | 2024-03-22 | Near field probe and near field probe device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410335229.4A CN117929862A (en) | 2024-03-22 | 2024-03-22 | Near field probe and near field probe device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117929862A true CN117929862A (en) | 2024-04-26 |
Family
ID=90752464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410335229.4A Pending CN117929862A (en) | 2024-03-22 | 2024-03-22 | Near field probe and near field probe device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117929862A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070216408A1 (en) * | 2004-03-31 | 2007-09-20 | Noriaki Ando | Magnetic Field Sensor |
| US20150160309A1 (en) * | 2013-12-09 | 2015-06-11 | National Taiwan University | Magnetic field probe, magnetic field measurement system and magnetic field measurement method |
| CN112526221A (en) * | 2020-10-26 | 2021-03-19 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Electromagnetic field composite probe and detection system |
| CN113985324A (en) * | 2021-06-25 | 2022-01-28 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Probe circuit board, probe and probe system |
| CN114966230A (en) * | 2022-04-12 | 2022-08-30 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Electromagnetic field probe |
| CN115327453A (en) * | 2022-08-10 | 2022-11-11 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Electromagnetic field composite probe |
| CN117554710A (en) * | 2024-01-11 | 2024-02-13 | 深圳市航顺芯片技术研发有限公司 | Near field probe and near field probe device |
-
2024
- 2024-03-22 CN CN202410335229.4A patent/CN117929862A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070216408A1 (en) * | 2004-03-31 | 2007-09-20 | Noriaki Ando | Magnetic Field Sensor |
| US20150160309A1 (en) * | 2013-12-09 | 2015-06-11 | National Taiwan University | Magnetic field probe, magnetic field measurement system and magnetic field measurement method |
| CN112526221A (en) * | 2020-10-26 | 2021-03-19 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Electromagnetic field composite probe and detection system |
| CN113985324A (en) * | 2021-06-25 | 2022-01-28 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Probe circuit board, probe and probe system |
| CN114966230A (en) * | 2022-04-12 | 2022-08-30 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Electromagnetic field probe |
| CN115327453A (en) * | 2022-08-10 | 2022-11-11 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Electromagnetic field composite probe |
| CN117554710A (en) * | 2024-01-11 | 2024-02-13 | 深圳市航顺芯片技术研发有限公司 | Near field probe and near field probe device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4219634B2 (en) | Magnetic sensor, side-open TEM cell, and apparatus using them | |
| US9812750B2 (en) | High frequency band pass filter with coupled surface mount transition | |
| CN108226656B (en) | Electromagnetic field composite passive probe | |
| JP5151032B2 (en) | Magnetic field probe device and magnetic field probe element | |
| CN112526221B (en) | Electromagnetic field composite probe and detection system | |
| Lim et al. | RF characterization and modeling of various wire bond transitions | |
| TWI287951B (en) | Methods for minimizing the impedance discontinuity between a conductive trace and a component and structures formed thereby | |
| CN108184306B (en) | Electric field passive probe | |
| CN108445302B (en) | High-sensitivity near-field resonance electric field test probe loaded with T-shaped electrode | |
| CN117554710A (en) | Near field probe and near field probe device | |
| CN112698251B (en) | Magnetic field passive probe and magnetic field detection device | |
| US7126356B2 (en) | Radiation detector for electrostatic discharge | |
| CN115327453A (en) | Electromagnetic field composite probe | |
| CN114966230A (en) | Electromagnetic field probe | |
| US8963569B2 (en) | Semiconductor chip probe and the conducted EME measurement apparatus with the semiconductor chip probe | |
| JP5418424B2 (en) | Electromagnetic field probe | |
| Sivaraman et al. | Broad band PCB probes for near field measurements | |
| CN117929862A (en) | Near field probe and near field probe device | |
| CN114966231A (en) | Electromagnetic field composite near-field probe | |
| US11946953B2 (en) | Electromagnetic field sensor | |
| US11678433B2 (en) | Printed circuit board assembly for edge-coupling to an integrated circuit | |
| CN110824261B (en) | Active magnetic field probe adopting hybrid bias filter network | |
| Wang et al. | Simultaneous measurement of electric and magnetic fields with a high-sensitivity differential composite probe | |
| Li et al. | Comparative analysis of several near-field probes for magnetic field measurements | |
| CN113295932B (en) | Sectional type metal strip magnetic field probe |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |