CN108445302B - High-sensitivity near-field resonance electric field test probe loaded with T-shaped electrode - Google Patents
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- CN108445302B CN108445302B CN201810105741.4A CN201810105741A CN108445302B CN 108445302 B CN108445302 B CN 108445302B CN 201810105741 A CN201810105741 A CN 201810105741A CN 108445302 B CN108445302 B CN 108445302B
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Abstract
The invention relates to a high-sensitivity near-field resonance electric field test probe loaded with a T-shaped electrode, which at least comprises a micro coaxial connector (SMA connector) and an electric field probe body; the electric field probe body comprises a detection tip loaded with a T-shaped electrode, a resonator, an impedance converter, a signal via hole and a coplanar waveguide CB-CPW with a metal back plate; the design and manufacture of the electric field probe body are based on a Printed Circuit Board (PCB) process and adopt a four-layer plate structure. The test probe has the characteristics of high sensitivity, miniaturization and high fraction, and can effectively extract useful electric field signals in an environment with a weak radiation level of a CPS frequency band. And a PCB processing technology is adopted, so that the production cost is reduced, and the research and development period is shortened. Meanwhile, a more effective high-sensitivity detection technical device is provided for positioning and tracking an interference source of a GPS narrowband radio frequency electronic system.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to a high-sensitivity near-field resonance electric field test probe loaded with a T-shaped electrode, which is used for extracting narrow-band weak electric field signals and belongs to the field of electromagnetic leakage and electromagnetic field near-field test.
[ background of the invention ]
Due to the increase of the working frequency, the increase of the wiring density of the printed circuit board, the fast switching of the high and low levels of the digital signal and the increase of the speed of the data bus, some undesirable electromagnetic field radiation is generated. These radiations are picked up by cables, traces or pins of integrated circuits, coupled into electronic devices or electronic systems, creating serious electromagnetic compatibility problems, making the design of high performance rf electronic systems facing new challenges and serious difficulties. In electronic product design, electromagnetic compatibility design is becoming an increasingly important technology. International standards such as IEC61967 and IEC62132 standardize the radiation evaluation of integrated circuits. As a key device in near field testing, near field test probes can capture electric and magnetic field radiation. For radio frequency systems operating in narrow band, radiation in a specific frequency band is a major concern for testers, and at this time, the broadband near-field test probe obviously loses the advantage that the probe is widely used by relying on the broadband frequency band, and is no longer the best choice. For WIFI and GPS systems with narrow operating frequency band and low electromagnetic radiation, the technical problem of how to extract useful electromagnetic radiation in high noise environment is becoming more and more urgent. Aiming at solving the new technical problem and meeting the design requirement of radio frequency electronic system products in the electronic industry and aiming at the electromagnetic radiation monitoring of a GPS narrow band, the invention develops the high-sensitivity near-field resonance electric field test probe loaded with the T-shaped electrode.
[ summary of the invention ]
In order to solve the technical problem of low electromagnetic radiation detection of the GPS narrowband radio frequency signals, the invention designs the high-sensitivity near-field resonance electric field test probe loaded with the T-shaped electrode, and aims to effectively extract electromagnetic signals radiated in narrowband radio frequency systems such as a GPS and the like and improve the performance of an electronic system.
In order to meet the above object, the present invention has the following aspects:
a high-sensitivity near-field resonance electric field test probe loaded with T-shaped electrodes at least comprises a micro coaxial connector (SMA connector) and an electric field probe body;
the SMA connector is a super SMA connector which is developed by the southwest microwave company of America, and the specific model is 292-04A-6;
the electric field probe body comprises a detection tip loaded with a T-shaped electrode, a resonator, an impedance converter, a signal through hole and a coplanar waveguide (CB-CPW) with a metal back plate;
the electric field probe body is designed and manufactured based on a Printed Circuit Board (PCB) process and adopts a four-layer plate structure.
The top shielding layer plane is positioned on the first layer, and the bottom shielding layer plane is positioned on the fourth layer; the detection tip end, the resonator and the impedance converter of the loading T-shaped electrode are positioned on the third layer; the detection tip of the loaded T-shaped electrode extends 3mm more than the plane of the top shielding layer and the plane of the bottom shielding layer, so that an effective integral path is provided for an electric field signal; the coupling between the electric field probe and the tested piece can be enhanced by loading the detection tip of the T-shaped electrode; the resonator is cascaded with the detection tip loaded with the T-shaped electrode, and the resonator can be designed with a specific resonance frequency point; the impedance transformer is cascaded with the resonator, so that the conversion from high input impedance to low impedance can be realized, the impedance matching with a port of a measuring instrument is realized, and the near-field test probe has larger transmission gain.
The SMA connector is in press-fit contact with the CB-CPW and transmits a signal tested by the near-field electric field probe to a measuring instrument; the central conductor of the CB-CPW is positioned in a rectangular groove formed in the plane of the top shielding layer to prevent the CB-CPW central conductor from being connected with the plane of the top shielding layer; the signal via hole penetrates through the plane of the top shielding layer and the plane of the bottom shielding layer; the top shielding layer plane and the bottom shielding layer plane are provided with anti-bonding pads, so that the signal via hole is prevented from being short-circuited due to the connection of the signal via hole with the top shielding layer plane and the bottom shielding layer plane; a signal via connects the impedance transformer to the CB-CPW center conductor; the characteristic impedance of the CB-CPW center conductor is 50 Ω and the impedance control plane is the middle 1-layer plane located on the second layer.
The high-sensitivity near-field resonance electric field test probe loaded with the T-shaped electrode has the beneficial effects that:
the high-sensitivity near-field resonance electric field test probe loaded with the T-shaped electrode has the characteristics of high sensitivity, miniaturization and high fraction, and can effectively extract useful electric field signals in the environment of weak radiation level of CPS frequency band; according to the high-sensitivity near-field resonance electric field test probe loaded with the T-shaped electrode, a mature PCB processing technology is adopted, the production cost is reduced, and the research and development period of the near-field electric field test probe is shortened; the high-sensitivity near-field resonance electric field test probe loaded with the T-shaped electrode clarifies a method for designing the resonance probe, engineering design and research personnel can easily master the method for designing the near-field electric field test probe, and the engineering design and research personnel can modify the corresponding structure, parameters and the like of the near-field electric field test probe according to the requirements of actual engineering projects and obtain the near-field electric field test probe with different resonance frequency points and higher sensitivity and gain performance by combining the method.
The high-sensitivity near-field resonance electric field test probe loaded with the T-shaped electrode effectively solves the technical problem of useful electric field signal capture in the test of the low radiation level of the GPS narrowband radio frequency electronic system, can be successfully applied to the acquisition of transient voltage signals in the GPS narrowband radio frequency electronic system, and provides a more effective high-sensitivity detection technical device for the positioning and tracking of an interference source of the GPS narrowband radio frequency electronic system. The high-sensitivity near-field resonance electric field test probe loaded with the T-shaped electrode also provides a design idea and a development method for developing a high-performance near-field test probe for extracting weak interference signals in other narrow-band radio frequency electronic systems.
[ description of the drawings ]
FIG. 1 is a PCB overlay of a high sensitivity near field resonant electric field test probe body loaded with T-shaped electrodes.
FIG. 2 is a top view of the overall structure of a high sensitivity near field resonant electric field test probe loaded with T-shaped electrodes.
FIG. 3(a) is a top view of a first layer of a high sensitivity near field resonant electric field test probe body loaded with T-shaped electrodes.
FIG. 3(b) is a top view of a second layer of a high sensitivity near field resonant electric field test probe body loaded with T-shaped electrodes.
FIG. 3(c) is a top view of the third layer of the high sensitivity near field resonant electric field test probe body loaded with T-shaped electrodes.
FIG. 3(d) is a top view of the fourth layer of the high sensitivity near field resonant electric field test probe body loaded with T-shaped electrodes.
FIG. 4 is a diagram of a resonance characteristic testing apparatus of a high-sensitivity near-field resonance electric field testing probe loaded with T-shaped electrodes.
FIG. 5 is a simulation and test S of a high-sensitivity near-field resonant electric field test probe loaded with T-shaped electrodes12Curve line.
The numbers in the figures illustrate the following:
1-1: SMA connector, 1-2: CB-CPW center conductor, 1-3: an impedance transformer is arranged on the base plate,
1-4: resonator, 1-5: t-electrode loaded detection tip, 1-6: the plane of the top layer shielding layer is provided with a shielding layer,
1-7: middle 1-layer plane, 1-8: the plane of the shielding layer at the bottom layer,
2-1: vector network analyzer, 2-2: 3D manipulator, 2-3: the power is driven to the line or lines,
2-4: power drive controller, 2-5: RS232 serial port data line, 2-6: the computer is used for controlling the operation of the computer,
2-7: general purpose interface bus GPIB, 2-8: calibration microstrip line, 2-9: a coaxial cable.
[ detailed description ] embodiments
The structure, the position relation and the function of each part of the high-sensitivity near-field resonance electric field test probe loaded with the T-shaped electrode are further clarified by combining the attached drawings.
Fig. 1 shows a four-layer PCB laminated structure of a high-sensitivity near-field resonant electric field test probe loaded with T-shaped electrodes according to the present invention. FIG. 2 shows an overall top view of a high sensitivity near-field resonant electric field test probe loaded with T-shaped electrodes according to the present invention. Fig. 3 shows, from left to right, a first layer (fig. 3(a)), a second layer (fig. 3(b)), a third layer (fig. 3(c)) and a fourth layer (fig. 3(d)) of a high-sensitivity near-field resonant electric field test probe according to the present invention.
The invention relates to a high-sensitivity near-field resonance electric field test probe loaded with a T-shaped electrode, which comprises an SMA connector 1-1 and an electric field probe body; the design and processing of the electric field probe body are based on a four-layer circuit board structure of a PCB process. The top shield plane 1-6 is located at the first layer, and the thickness of the top shield plane 1-6 is 1.5 oz. The CB-CPW center conductor 1-2 is located in a rectangular slot cut in the top shield plane 1-6. The CB-CPW center conductor 1-2 has a characteristic impedance of 50 omega, and the characteristic impedance control reference plane is a middle 1-layer plane 1-7 located at the third layer and has a thickness of 0.5 oz. The detection tip 1-5 loaded with the T-shaped electrode, the resonator 1-4 and the impedance converter 1-3 are positioned on the middle 2 layers and are sequentially cascaded from bottom to top. The thickness of the detection tip 1-5 loaded with the T-electrode was 0.5oz, extending 3mm from the top shield plane 1-6 and the bottom shield plane 1-8. The resonators 1-4 are composed of parallel plate capacitors and planar annular inductors, and can realize resonance at specific frequency points. The impedance transformer 1-3 can transform the high input impedance of the resonator 1-4 to an impedance matched to the measurement instrument to achieve maximum power transfer. The CB-CPW center conductor 1-2 at the top layer and the impedance transformer 1-3 at the middle 2 layer are connected by a signal via. The current sensed by the sensing tip 1-5 loaded with the T-shaped electrode sequentially flows through the resonator 1-4, the impedance converter 1-3, the signal via hole, the CB-CPW central conductor 1-2, the SMA connector 1-1 and reaches a measuring instrument.
And (3) carrying out calibration test on the designed and processed high-sensitivity near-field resonance electric field test probe loaded with the T-shaped electrode. The calibration test device in this embodiment refers to fig. 4. In order to ensure the continuity and consistency of the calibration test results, the calibration test process in this embodiment is performed in a microwave darkroom. The calibration microstrip line 2-8 of 50 omega is terminated with a broadband test load of 50 omega, the vector network analyzer 2-1 is connected with the calibration microstrip line 2-8 through a shielded coaxial cable 2-9, and the vector network analyzer 2-1 can be used as a driving source and a receiver. The SMA connector 1-1 is connected with the electric field probe body, the shell (ground) of the SMA connector 1-1 is in press contact with the middle layer 1 plane 1-7 and the bottom layer shielding plane 1-8, and the pin of the SMA connector 1-1 is in press contact with the CPW central conductor 1-2; the electric field probe body transmits the detected electric field signal to the vector network analyzer 2-1 through the SMA connector 1-1 and the shielded coaxial cable 2-9.
The 3D manipulator 2-2, the power drive controller 2-4 and the computer 2-6 form a near-field electric field test probe 3D positioning motion system. The 3D manipulator 2-2 can drive the near-field electric field test probe to accurately and freely move in a 3-dimensional space; the power driving controller 2-4 is interconnected with the 3D manipulator 2-2 through a power driving wire 2-3; the computer 2-6 is communicated with the power drive controller 2-4 through an RS232 serial receipt line 2-5; the computer 2-6 is provided with upper computer control software, the sent motion instruction is transmitted to the power driving controller 2-4 through the serial port data line 2-5, and the power driving controller 2-4 outputs a high-power operation control signal to the 3D manipulator 2-2 according to the received instruction information. The vector network analyzer 2-1 is communicated with a computer through a general purpose interface bus GPIB 2-7, and the computer 1 can set the vector network analyzer 2-1 through the general purpose interface bus GPIB 2-7, wherein the vector network analyzer comprises a test frequency band, a resolution bandwidth, a video bandwidth and the like. In this embodiment, the signal of the vector network analysis 2-1 is Keysight E5071C 9 kHz-20 GHz, the test band is from 1.1GHz to 1.9GHz, the resolution bandwidth is 30kHz, the video bandwidth is in an "automatic" mode, and the number of scanning points is 1001.
In the embodiment, the near-field electric field test probe is arranged 2mm above the center of the calibration microstrip line 2-8, the port 2 is used as a driving port, the port 1 is used as a receiving port, and the transmission coefficient from the port 2 to the port 1, namely S, is tested12. In the test structure, only S is of interest12In dB form. As shown in fig. 5, simulated | S12The | Curve vs. the | S tested12The | curve is well matched, 1.57GHz frequency point, | S12I reaches a maximum value, with a larger transmission gain than at other frequency points. From | S12In view of the above, the high-sensitivity near-field resonance electric field test probe loaded with the T-shaped electrode has higher sensitivity, and is suitable for detecting low-radiation-level electromagnetic interference of a narrow-band radio frequency system.
It should be noted that the technical means and design methods disclosed in the present invention are not limited to the present invention, and are also applicable to other schemes, invention methods and invention products derived from the design ideas, the invention methods and technical means of the present invention and the technical features described in the present invention, so that the other schemes, the invention methods and the invention products derived from the schemes, the invention methods and the invention products should be regarded as the protection scope of the present invention.
Claims (6)
1. The utility model provides a high sensitivity near field resonance electric field test probe of loading T type electrode, includes miniature coaxial connector and near field resonance electric field test probe body at least, its characterized in that:
the miniature coaxial connector is an SMA connector, and the model is a super SMA connector developed by the southwest microwave company of America;
the near-field resonance electric field test probe body comprises a detection tip loaded with a T-shaped electrode, a resonator, an impedance converter, a signal via hole and a coplanar waveguide CB-CPW with a metal back plate;
the design and the manufacture of the near-field resonance electric field test probe body are based on a Printed Circuit Board (PCB) process and adopt a four-layer plate structure;
the plane of the top shielding layer is positioned on the first layer, and the plane of the bottom shielding layer is positioned on the fourth layer; the detection tip end, the resonator and the impedance converter of the loading T-shaped electrode are positioned on the third layer;
the detection tip of the loaded T-shaped electrode can enhance the coupling between the near-field resonance electric field test probe and the tested piece; the resonator is cascaded with the detection tip loaded with the T-shaped electrode, and the resonator can design a resonance frequency point; the impedance converter is cascaded with the resonator to realize the conversion from high input impedance to low impedance and realize the impedance matching with a port of a measuring instrument, so that the near-field resonance electric field test probe has transmission gain;
the SMA connector is in press-fit contact with the CB-CPW and transmits a signal tested by the near-field resonance electric field test probe to a measuring instrument; the central conductor of the CB-CPW is positioned in a rectangular groove formed in the plane of the top shielding layer to prevent the CB-CPW central conductor from being connected with the plane of the top shielding layer; the signal via hole penetrates through the plane of the top shielding layer and the plane of the bottom shielding layer; the top shielding layer plane and the bottom shielding layer plane are provided with anti-bonding pads, so that the signal via hole is prevented from being short-circuited due to the connection of the signal via hole with the top shielding layer plane and the bottom shielding layer plane; a signal via connects the impedance transformer to the CB-CPW center conductor.
2. The high-sensitivity near-field resonant electric field test probe loaded with the T-shaped electrode as claimed in claim 1, wherein: the specific model of the SMA connector is 292-04A-6.
3. The high-sensitivity near-field resonant electric field test probe loaded with the T-shaped electrode as claimed in claim 1, wherein: the detection tip of the loading T-shaped electrode is 3mm longer than the plane of the top shielding layer and the plane of the bottom shielding layer, and an effective integral path is provided for electric field signals.
4. The high-sensitivity near-field resonant electric field test probe loaded with the T-shaped electrode as claimed in claim 1, wherein: the characteristic impedance of the CB-CPW center conductor is 50 omega.
5. The high-sensitivity near-field resonant electric field test probe loaded with the T-shaped electrode as claimed in claim 1, wherein: the thickness of the top shield plane is 1.5 oz.
6. The high-sensitivity near-field resonant electric field test probe loaded with the T-shaped electrode as claimed in claim 1, wherein: the thickness of the detection tip loaded with the T-electrode was 0.5 oz.
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| CN109521374B (en) * | 2018-10-18 | 2020-10-27 | 北京航空航天大学 | Resonance tangential electric field probe embedded with integrated balun and loaded improved dipole |
| CN109884412B (en) * | 2019-01-28 | 2021-04-13 | 北京航空航天大学 | Ultra-wideband electric field probe adopting U-shaped structure |
| CN110470917A (en) * | 2019-07-22 | 2019-11-19 | 西安电子科技大学 | A kind of high temperature resistant electric-field probe applied to high temperature and high speed plasma internal electric field distribution measuring |
| CN110568386B (en) * | 2019-07-22 | 2022-01-25 | 西安电子科技大学 | High-temperature-resistant magnetic field probe for measuring magnetic field distribution in high-temperature high-speed plasma |
| CN110531161B (en) * | 2019-07-29 | 2020-10-23 | 北京航空航天大学 | Non-contact type on-line testing device for input impedance of each position of printed circuit board |
| CN110824261B (en) * | 2019-10-21 | 2020-12-15 | 北京航空航天大学 | Active magnetic field probe adopting hybrid bias filter network |
| CN113238098B (en) * | 2021-05-12 | 2022-03-29 | 厦门大学 | Wide-frequency electric field probe capable of simultaneously measuring double-component electric field |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2062457U (en) * | 1989-07-12 | 1990-09-19 | 电子科技大学 | Composite dielectric constant testing sensor of microwave dielectric substrate |
| CN2869870Y (en) * | 2005-06-22 | 2007-02-14 | 湖南科技大学 | Electric-field probe for electromagnetic compatibility near-field detection |
| CN105720336A (en) * | 2016-04-08 | 2016-06-29 | 北京航空航天大学 | Resonance suppression structure of broadband near-field magnetic field probe, and construction method of resonance suppression structure |
| CN105891611A (en) * | 2016-04-08 | 2016-08-24 | 北京航空航天大学 | Broadband miniature near-field electric field test probe |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101789274B1 (en) * | 2010-12-22 | 2017-10-26 | 한국전자통신연구원 | Apparatus and Method for Near Field Scan Calibration |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2062457U (en) * | 1989-07-12 | 1990-09-19 | 电子科技大学 | Composite dielectric constant testing sensor of microwave dielectric substrate |
| CN2869870Y (en) * | 2005-06-22 | 2007-02-14 | 湖南科技大学 | Electric-field probe for electromagnetic compatibility near-field detection |
| CN105720336A (en) * | 2016-04-08 | 2016-06-29 | 北京航空航天大学 | Resonance suppression structure of broadband near-field magnetic field probe, and construction method of resonance suppression structure |
| CN105891611A (en) * | 2016-04-08 | 2016-08-24 | 北京航空航天大学 | Broadband miniature near-field electric field test probe |
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