CN117929782A - Low-stress pendulum micro-accelerometer - Google Patents
Low-stress pendulum micro-accelerometer Download PDFInfo
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- CN117929782A CN117929782A CN202410326082.2A CN202410326082A CN117929782A CN 117929782 A CN117929782 A CN 117929782A CN 202410326082 A CN202410326082 A CN 202410326082A CN 117929782 A CN117929782 A CN 117929782A
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- 238000002955 isolation Methods 0.000 claims abstract description 110
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000012858 packaging process Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000035882 stress Effects 0.000 description 89
- 239000000758 substrate Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 238000010301 surface-oxidation reaction Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
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Abstract
The invention relates to the technical field of micro-electromechanical systems, and provides a low-stress pendulum micro-accelerometer which comprises an upper polar plate, a middle polar plate and a lower polar plate which are sequentially arranged. The upper polar plate and the lower polar plate comprise a first bonding frame, an electrode area and a first stress main isolation beam, a first accommodating space is formed in the inner side of the first bonding frame, the electrode area and the first stress main isolation beam are located in the first accommodating space, and the electrode area is connected to the first bonding frame through the first stress main isolation beam. The middle polar plate comprises a second bonding frame, a mass block, a flexible beam and a second stress main isolation beam, a second accommodating space is formed in the inner side of the second bonding frame, the mass block, the flexible beam and the second stress main isolation beam are located in the second accommodating space, one end of the flexible beam is connected to the mass block, and the other end of the flexible beam is connected to the second bonding frame through the second stress main isolation beam. Stress in the bonding and packaging processes can be isolated, batch manufacturing can be realized, and the processing efficiency is improved.
Description
Technical Field
The technical field of micro-electromechanical systems, in particular to a pendulum micro-accelerometer.
Background
In the packaging process of the micro accelerometer, the chip deformation and stress are inevitably influenced by the chip attachment. In order to reduce the influence of the patch on the deformation and stress of the chip, a stress isolation structure is generally introduced between the substrate of the micro accelerometer of the package substrate and the chip. The shell base is provided with a mounting surface, and the mounting surface is opposite to the surface provided with the isolation structure. The advantage of this approach is that the material of the stress isolation structure can be flexibly selected. But suffer from the following drawbacks: the stress isolation structure is independently processed, when the stress isolation structure is assembled with a chip, the accuracy of the bonding position of the stress isolation structure and the chip is controlled through additional equipment, and labor is consumed; in addition, the isolation structure and the chip are generally adhered together through glue, and the problem of CTE mismatch of thermal mismatch of different materials is faced.
Disclosure of Invention
In order to solve the technical problems, the invention provides a low-stress pendulum micro-accelerometer, wherein stress isolation structures are arranged on an upper polar plate, a middle polar plate and a lower polar plate of the micro-accelerometer.
The invention provides a low-stress pendulum micro-accelerometer which comprises an upper polar plate, a middle polar plate and a lower polar plate which are sequentially arranged. The upper polar plate and the lower polar plate comprise a first bonding frame, an electrode area and a first stress main isolation beam, a first accommodating space is formed in the inner side of the first bonding frame, the electrode area and the first stress main isolation beam are located in the first accommodating space, and the electrode area is connected to the first bonding frame through the first stress main isolation beam. The middle polar plate comprises a second bonding frame, a mass block, a flexible beam and a second stress main isolation beam, a second accommodating space is formed in the inner side of the second bonding frame, the mass block, the flexible beam and the second stress main isolation beam are located in the second accommodating space, one end of the flexible beam is connected to the mass block, and the other end of the flexible beam is connected to the second bonding frame through the second stress main isolation beam.
In some embodiments, only one side of the electrode region is connected to the first bonding frame through the first stress primary isolation beam.
In some embodiments, the first and/or second stress primary isolation beams are further provided with a stress micro-isolation structure thereon.
In some embodiments, one end of the first stress primary isolation beam is connected to one side of the electrode region, and the other end of the first stress primary isolation beam is connected to the first bonding frame; the middle part of the second stress main isolation beam is connected to the flexible beam, and the two end parts of the second stress main isolation beam are respectively connected to two opposite sides of the second bonding frame.
In some embodiments, the stress micro-isolation structure is disposed in a middle section region of the first stress main isolation beam and/or a middle section region of the second stress main isolation beam from the middle to both ends; the first stress main isolation beam is configured as a folded beam, and both of the two sections of the second stress main isolation beam extending from the middle to the two end portions are configured as folded beams.
In some embodiments, the outer side of the first bonding frame of the upper polar plate, the outer side of the second bonding frame of the middle polar plate and the outer side of the first bonding frame of the lower polar plate are respectively provided with a pad area, and the three pad areas are arranged in a staggered mode in space.
In some embodiments, in the upper polar plate and the lower polar plate, the upper and lower surfaces of the electrode region, the first stress main isolation beam and the bonding pad region are flush, and the upper and lower sides of the first bonding frame are respectively provided with a protruding layer protruding from the upper and lower surfaces of the electrode region; in the middle polar plate, the thickness of the flexible beam is smaller than that of the mass block, the upper and lower surfaces of the mass block, the second stress main isolation beam and the bonding pad area are flush, and the upper and lower sides of the second bonding frame are respectively provided with a protruding layer protruding from the upper and lower surfaces of the mass block.
In some embodiments, the first bonding border of the upper plate is bonded to an upper surface of the second bonding border of the middle plate, and the first bonding border of the lower plate is bonded to a lower surface of the second bonding border of the middle plate.
In some embodiments, the upper cover plate and the lower cover plate respectively comprise a third bonding frame and a flat plate area, and the inner side of the third bonding frame is provided with a protruding layer protruding from the flat plate area; the third bonding frame of the upper cover plate is bonded to the upper surface of the first bonding frame of the upper polar plate; the third bonding frame of the lower cover plate is bonded to the lower surface of the first bonding frame of the lower polar plate.
In some embodiments, the upper cover plate, the upper polar plate, the middle polar plate, the lower polar plate and the lower cover plate are all integrally formed structures based on silicon wafers; the protruding layers of the first bonding frame, the second bonding frame and the third bonding frame are oxide layers.
The characteristics and advantages of the present disclosure include: the stress isolation structure is designed in the chip (the upper polar plate, the middle polar plate and the lower polar plate), so that the influence of stress in the bonding and packaging processes on the performance of the accelerometer can be isolated, and the performance of the accelerometer is improved. In addition, the accelerometer with the structure can be manufactured in batch when the upper polar plate, the middle polar plate and the lower polar plate are processed due to the fact that the isolation structure is a part of the upper polar plate, the middle polar plate and the lower polar plate. In addition, other external isolation structures are not needed during packaging, so that the packaging difficulty can be reduced, and the efficiency is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings required for the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and other drawings may be obtained according to these drawings without inventive effort for a person of ordinary skill in the art.
FIG. 1 is a schematic structural view of a low stress pendulum micro-accelerometer of the present invention;
FIG. 2 is a schematic view of the structure of the upper plate of FIG. 1;
FIG. 3 is a schematic view of the structure of the middle plate of FIG. 1;
FIG. 4 is a schematic view of the structure of the lower plate of FIG. 1;
FIG. 5 is a schematic view of the upper cover plate of FIG. 1;
Fig. 6 is a schematic view of the structure of the lower cover plate in fig. 1.
Reference numerals illustrate:
1-an upper cover plate, 2-an upper polar plate, 3-a middle polar plate, 4-a lower polar plate, 5-a lower cover plate, 6-a bonding pad area and 7-an oxide layer;
241-first bonding frame, 242-electrode region, 243-first stress main isolation beam, 245-first accommodating space;
31-second bonding frames, 32-mass blocks, 33-flexible beams, 34-second stress main isolation beams and 35-second accommodating spaces;
151-third bonding border, 152-flat plate area.
Detailed Description
The following description of the technical solutions in the embodiments of the present disclosure will be made clearly and completely with reference to the accompanying drawings in the embodiments of the present disclosure, and it is apparent that the described embodiments are only some embodiments of the present disclosure, not all embodiments. Based on the embodiments in this disclosure, all other embodiments that a person of ordinary skill in the art would obtain without making any inventive effort are within the scope of protection of this disclosure.
Referring to fig. 1, the invention discloses a low stress pendulum micro-accelerometer, which comprises an upper polar plate 2, a middle polar plate 3 and a lower polar plate 4. The upper electrode plate 2 and the lower electrode plate 4 are respectively provided with a first bonding frame 241 and an electrode zone 242, the first bonding frames enclose a first accommodating space, the electrode zone is positioned in the first accommodating space, the electrode zone 242 is connected to the first bonding frames through a first stress main isolation beam 243, and the rest parts of the electrode zone are suspended. The middle polar plate 3 is provided with a second bonding frame and a sensitive structure, the second bonding frame 31 encloses a second accommodating space, the sensitive structure is positioned in the second accommodating space, and the sensitive structure is connected to the second bonding frame through a second stress main isolation beam 34. Specifically, the sensitive structure includes a mass 32 and a flexure 33, one end of the flexure 33 is connected to the mass 32, and the other end of the flexure 33 is connected to the second bonding frame through a second stress primary isolation beam 34.
The upper polar plate 2 and the lower polar plate 4 are provided with the first stress main isolation beam 243, so that stress from the bonding process of the first bonding frame can be isolated, and stress transmitted to the first bonding frame in the packaging process can be isolated, and the position of an electrode region is prevented from being changed due to the stress in the bonding and packaging processes, so that the performance of the accelerometer is influenced. The middle polar plate 3 is provided with the second stress main isolation beam 34, so that stress from the bonding process of the second bonding frame can be isolated, and stress transmitted to the second bonding frame in the packaging process can be isolated, so that the bonding and stress transmission to a sensitive structure in the packaging process are prevented, and the performance of the accelerometer is influenced.
Referring to fig. 2 and 4, in some embodiments, each of the upper and lower electrode plates 2 and 4 includes a first bonding frame 241, an electrode region 242, and a first stress main isolation beam 243, wherein a first receiving space 245 is formed inside the first bonding frame 241, the electrode region 242 and the first stress main isolation beam 243 are located in the first receiving space 245, and the first bonding frame 241 is connected with the electrode region 242 only through the first stress main isolation beam 243. In the embodiment shown in fig. 2 and 4, the first bonding frames 241 and the electrode regions 242 of the upper and lower electrode plates 2 and 4 are each configured in a rectangular shape. Alternatively, the shape of the first bonding frame 241 may be any shape as long as it has a first receiving space 245 capable of receiving the electrode region 242 and the first stress main isolation beam 243; the shape of the electrode region 242 is also not limited, and may be configured in any other shape, for example, a circular shape, an elliptical shape, a trapezoid shape, or the like.
In some embodiments, a plurality of first stress primary isolation beams 243 may be provided, with the electrode region 242 being connected to the first bonding frame 241 by the plurality of first stress primary isolation beams 243. In a preferred embodiment, referring to fig. 2 and 4, only one side of the electrode region 242 is connected to the first bonding frame 241 through the first stress main isolation beam 243, and the rest of the electrode region 242 is suspended except for the connection of the first stress main isolation beam 243, so that the stress of the electrode region 242 can be more fully released.
Referring to fig. 3, in some embodiments, the intermediate plate 3 includes a second bonding frame 31, a sensitive structure, and a second stress primary isolation beam 34. The second bonding frame 31 has a second accommodating space 35 formed inside, and the second stress main isolation beam 34 and the sensitive structure are located in the second accommodating space 35. The sensitive structure comprises a mass 32 and a flexible beam 33, one end of the flexible beam 33 is connected to the mass 32, and the other end of the flexible beam 33 is connected to the second bond frame 31 via a second stress primary isolation beam 34. In the embodiment shown in fig. 3, the second bonding frame 31 and the mass 32 are configured in a rectangular shape. Alternatively, the shape of the second bonding frame 31 may be any shape as long as it has a second accommodating space 35 capable of accommodating the sensitive structure and the second stress main isolation beam 34; the shape of the mass 32 may be any other shape, such as circular, elliptical, trapezoidal, etc.
Referring to fig. 2,3 and 4, the upper plate 2, the middle plate 3 and the lower plate 4 are provided with pad areas 6, respectively, and the three pad areas 6 are spatially staggered. The surface of the pad area 6 is provided with a metal layer, and the pad area 6 is used for electrical connection with an external circuit. Specifically, the pad area 6 of the upper plate 2 is disposed outside the first bonding frame 241 of the upper plate 2, the pad area 6 of the middle plate 3 is disposed outside the second bonding frame 31, and the pad area 6 of the lower plate 4 is disposed outside the first bonding frame 241 of the lower plate 4. The three pad areas 6 may be located on different sides of the micro-accelerometer, respectively, preferably the three pad areas 6 are located on the same side of the micro-accelerometer. For example, in the embodiment shown in fig. 2 to 4, the pad region 6 of the upper plate 2 is located at one end of the right side of the first bonding frame 241 of the upper plate 2, the pad region 6 of the middle plate 3 is located at the middle of the right side of the second bonding frame 31, and the pad region 6 of the lower plate 4 is located at the other end of the right side of the first bonding frame 241 of the lower plate 4. After the upper polar plate 2, the middle polar plate 3 and the lower polar plate 4 are bonded together, the top projection of the three bonding pad areas 6 are staggered.
The first and second stress main isolation beams 243 and 34 are not limited in shape and may be configured as a straight beam, a folded beam, a U-beam, a spiral beam, or the like. Preferably, in the embodiment shown in fig. 2 and 4, the first stress main isolation beam 243 is configured as a folded beam, one end of the first stress main isolation beam 243 is connected to one side of the electrode region 242, and the other end of the first stress main isolation beam 243 is connected to the first bonding frame 241. Referring to fig. 3, a middle portion of the second stress main isolation beam 34 is connected to the flexible beam 33, both end portions of the second stress main isolation beam 34 are connected to opposite sides of the second bonding frame 31, respectively, and two sections of the second stress main isolation beam 34 extending from the middle portion to both end portions are configured as a folded beam.
In a preferred embodiment, the first stress primary isolation beam 243 and/or the second stress primary isolation beam 34 are also provided with a stress micro-isolation structure to more fully isolate stresses. More preferably, the stress micro isolation structure is provided at a middle region in an extending direction of the first stress main isolation beam 243 and/or a middle region in an extending direction of the second stress main isolation beam 34 from a middle portion to both end portions. In particular, the micro-isolation structures may be formed by varying the thickness or width of portions of the first stress primary isolation beam 243 and/or the second stress primary isolation beam 34 such that the cross-section at the micro-isolation structures is reduced. For example, the micro isolation structures may be formed by reducing the thickness or the width, and the isolation trenches may also be formed by removing portions of the entities. Specifically, the first and/or second stress main isolation beams 243 and/or 34 may be configured to have a shape having both ends wider than the middle section, the first and/or second stress main isolation beams 243 and/or 34 may be configured to have both ends thicker than the middle section, and an isolation groove may be provided in the middle section of the first and/or second stress main isolation beams 243 and 34. The stress micro-isolation structure is arranged in the middle section area of the extending direction of the first stress main isolation beam 243 and/or in the middle section area of the extending direction of the second stress main isolation beam 34 from the middle to the two end parts, so that the connection strength of the first stress main isolation beam 243 and/or the second stress main isolation beam 34 can be ensured while further isolating the stress.
In some embodiments, in the upper plate 2 and the lower plate 4, the upper and lower surfaces of the electrode region 242, the first stress main isolation beam 243 and the pad region 6 are flush, and the upper and lower surfaces of the first bonding frame 241 have protruding layers protruding from the upper and lower surfaces of the electrode region 242, respectively. That is, in the upper plate 2 and the lower plate 4, the thicknesses of the electrode region 242, the first stress main isolation beam 243 and the pad region 6 are identical, and the thickness of the first bonding frame 241 is greater than that of the rest.
In some embodiments, in the middle pole plate 3, the thickness of the flexible beam 33 is smaller than the thickness of the mass block 32, the upper and lower surfaces of the mass block 32, the second stress main isolation beam 34 and the pad region 6 are flush, and the upper and lower surfaces of the second bonding frame 31 have protruding layers protruding from the upper and lower surfaces of the mass block 32, respectively. That is, in the intermediate plate 3, the thickness of the flexible beam 33 is the smallest, the thickness of the second bonding frame 31 is the largest, and the thicknesses of the mass 32, the second stress main isolation beam 34, and the pad region 6 are the same.
In some embodiments, the upper polar plate 2, the middle polar plate 3 and the lower polar plate 4 are made of the same material, and the upper polar plate 2, the middle polar plate 3 and the lower polar plate 4 are sequentially bonded from top to bottom. The first bonding frame 241 of the upper plate 2 is bonded to the upper surface of the second bonding frame 31 of the middle plate 3, and the first bonding frame 241 of the lower plate 4 is bonded to the lower surface of the second bonding frame 31 of the middle plate 3. Gaps are formed between the mass block 32 of the middle pole plate 3 and the electrode area 242 of the upper pole plate 2 and between the mass block 32 of the lower pole plate 4, and the mass block 32 can swing in the gaps.
In some embodiments, referring to fig. 1, the low stress pendulum micro-accelerometer further comprises an upper cover plate 1 and a lower cover plate 5, referring to fig. 5 and 6, the upper cover plate 1 and the lower cover plate 5 respectively comprise a third bonding frame 151 and a flat plate region 152. The inner side of the third bonding frame 151 has a convex layer protruding from the flat plate region 152, that is, the thickness of the third bonding frame 151 is greater than the thickness of the flat plate region 152.
The materials of the upper cover plate 1 and the lower cover plate 5 are the same as those of the upper polar plate 2, the middle polar plate 3 and the lower polar plate 4. The upper cover plate 1 is connected with the upper polar plate 2 in a bonding way, and the lower cover plate 5 is connected with the lower polar plate 4 in a bonding way. Specifically, the lower surface of the third bonding frame 151 of the upper cover plate 1 is bonded to the upper surface of the first bonding frame 241 of the upper plate 2; the upper surface of the third bonding frame 151 of the lower cap plate 5 is bonded to the lower surface of the first bonding frame 241 of the lower plate 4. The upper cover plate 1 and the lower cover plate 5 are used for protecting the upper polar plate 2, the middle polar plate 3 and the lower polar plate 4. A gap is provided between the flat plate region 152 of the upper cover plate 1 and the electrode region 242 of the upper electrode plate 2, and a gap is provided between the flat plate region 152 of the lower cover plate 5 and the electrode region 242 of the lower electrode plate 4. The upper cover plate 1 and the lower cover plate 5 correspond to a stress isolation substrate or a buffer plate, and can isolate external stress.
In some embodiments, the upper plate 2, the middle plate 3 and the lower plate 4 are all made of silicon wafers, and preferably all three are integrated structures based on silicon wafers. In the preferred embodiment, the upper and lower cover plates 1 and 5 are also made of silicon, and more preferably, both are also integrally formed based on silicon. Accordingly, the protruding layers of the first, second and third bonding frames 241, 31 and 151 are oxide layers. Specifically, the oxide layer is silicon oxide formed by oxidizing the surface of a silicon wafer. For example, when the upper electrode plate 2 and the lower electrode plate 4 are prepared, the surface oxidation treatment is performed on the silicon substrate, and then the oxide layer in the area except the first bonding frame 241 is removed, so as to obtain the protruding layer in the area of the first bonding frame 241. When the middle polar plate 3 is prepared, surface oxidation treatment is firstly carried out on the silicon substrate, and then the oxide layer in the area except the second bonding frame 31 is removed, so that the protruding layer in the area of the second bonding frame 31 is obtained. When the upper cover plate 1 and the lower cover plate 5 are prepared, the surface oxidation treatment is firstly carried out on the silicon substrate, and then the oxide layer of the area except the bonding side of the third bonding frame 151 is removed, so that the protruding layer of the third bonding frame 151 is obtained.
After the upper cover plate 1, the upper polar plate 2, the middle polar plate 3, the lower polar plate 4 and the lower cover plate 5 are bonded, the adjacent two layers are electrically isolated through the oxide layer 7. The thickness of the oxide layer between two adjacent layers defines the size of the gap between the two adjacent layers. For example, the size of the gap between the flat plate region 152 of the upper cover plate 1 and the electrode region 242 of the upper electrode plate 2 is determined by the thickness of the oxide layer on the lower surface of the third bonding frame 151 of the upper cover plate 1 and the thickness of the oxide layer on the upper surface of the first bonding frame 241 of the upper electrode plate 2; the size of the gap between the electrode area 242 of the upper plate 2 and the mass 32 of the middle plate 3 is determined by the thickness of the oxide layer on the lower surface of the first bonding frame 241 and the thickness of the oxide layer on the upper surface of the second bonding frame 31 of the upper plate 2. The gap between the mass 32 of the intermediate plate 3 and the electrode region 242 of the lower plate 4 is determined by the thickness of the oxide layer on the lower surface of the second bonding frame 31 and the thickness of the oxide layer on the upper surface of the first bonding frame 241 of the lower plate 4. The size of the gap between the electrode region 242 of the lower plate 4 and the plate region 152 of the lower cap plate 5 is determined by the thickness of the oxide layer on the lower surface of the first bonding frame 241 of the lower plate 4 and the thickness of the oxide layer on the upper surface of the third bonding frame 151 of the lower cap plate 5.
The foregoing is merely a few embodiments of the present disclosure, and those skilled in the art, based on the disclosure herein, may make various changes or modifications to the disclosed embodiments without departing from the spirit and scope of the disclosure.
Claims (10)
1. The low-stress pendulum micro-accelerometer is characterized by comprising an upper polar plate (2), a middle polar plate (3) and a lower polar plate (4) which are sequentially arranged;
The upper pole plate (2) and the lower pole plate (4) both comprise a first bonding frame (241), an electrode area (242) and a first stress main isolation beam (243), a first accommodating space (245) is formed at the inner side of the first bonding frame (241), the electrode area (242) and the first stress main isolation beam (243) are positioned in the first accommodating space (245), and the electrode area (242) is connected to the first bonding frame (241) through the first stress main isolation beam (243);
The middle polar plate (3) comprises a second bonding frame (31), a mass block (32), a flexible beam (33) and a second stress main isolation beam (34), wherein a second accommodating space (35) is formed in the second bonding frame (31), the mass block (32), the flexible beam (33) and the second stress main isolation beam (34) are located in the second accommodating space (35), one end of the flexible beam (33) is connected to the mass block (32), and the other end of the flexible beam (33) is connected to the second bonding frame (31) through the second stress main isolation beam (34).
2. The low stress pendulum micro-accelerometer of claim 1, wherein only one side of the electrode region (242) is connected to the first bond frame (241) by the first stress main isolation beam (243).
3. The low stress pendulum micro-accelerometer of claim 2, wherein the first stress primary isolation beam (243) and/or the second stress primary isolation beam (34) are further provided with a stress micro-isolation structure thereon.
4. A low stress pendulum micro-accelerometer according to claim 3, wherein one end of the first stress main isolation beam (243) is connected to one side of the electrode zone (242), the other end of the first stress main isolation beam (243) is connected to the first bonding frame (241);
The middle part of the second stress main isolation beam (34) is connected to the flexible beam (33), and two end parts of the second stress main isolation beam (34) are respectively connected to two opposite sides of the second bonding frame (31).
5. The low stress pendulum micro-accelerometer of claim 4, wherein the stress micro-isolation structure is disposed in a middle region of the first stress main isolation beam (243) and/or a middle region of the second stress main isolation beam (34) from middle to both ends;
the first stress main isolation beam (243) is configured as a folded beam, and both of the sections of the second stress main isolation beam (34) extending from the middle to both end portions are configured as folded beams.
6. The low stress pendulum micro accelerometer of claim 5, wherein the outer side of the first bonding frame (241) of the upper plate (2), the outer side of the second bonding frame (31) of the middle plate (3) and the outer side of the first bonding frame (241) of the lower plate (4) are each provided with a pad region (6), and the three pad regions (6) are spatially staggered.
7. The low stress pendulum micro-accelerometer of claim 6, wherein in the upper plate (2) and the lower plate (4), the upper and lower surfaces of the electrode region (242), the first stress main isolation beam (243) and the pad region (6) are flush, and the upper and lower sides of the first bonding frame (241) are respectively provided with a protruding layer protruding from the upper and lower surfaces of the electrode region (242);
in the middle polar plate (3), the thickness of the flexible beam (33) is smaller than that of the mass block (32), the upper and lower surfaces of the mass block (32), the second stress main isolation beam (34) and the bonding pad area (6) are flush, and the upper and lower sides of the second bonding frame (31) are respectively provided with a protruding layer protruding out of the upper and lower surfaces of the mass block (32).
8. The low stress pendulum micro-accelerometer of any one of claims 1-7, wherein the first bonding border (241) of the upper plate (2) is bonded to an upper surface of the second bonding border (31) of the middle plate (3), and the first bonding border (241) of the lower plate (4) is bonded to a lower surface of the second bonding border (31) of the middle plate (3).
9. The low stress pendulum micro-accelerometer of claim 8, further comprising an upper cover plate (1) and a lower cover plate (5), the upper cover plate (1) and the lower cover plate (5) respectively comprising a third bonded frame (151) and a flat plate region (152), the inside of the third bonded frame (151) having a protruding layer protruding from the flat plate region (152); the third bonding frame (151) of the upper cover plate (1) is bonded to the upper surface of the first bonding frame (241) of the upper polar plate (2); the third bonding frame (151) of the lower cap plate (5) is bonded to a lower surface of the first bonding frame (241) of the lower plate (4).
10. The low stress pendulum micro-accelerometer of claim 9, wherein the upper cover plate (1), the upper polar plate (2), the middle polar plate (3), the lower polar plate (4) and the lower cover plate (5) are all of a silicon wafer integrated structure;
the convex layers of the first bonding frame (241), the second bonding frame (31) and the third bonding frame (151) are oxide layers.
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| CN202410326082.2A CN117929782B (en) | 2024-03-21 | 2024-03-21 | Low-stress pendulum micro-accelerometer |
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Citations (14)
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