CN117926390A - Method and device for heating furnace table - Google Patents

Abstract

The present disclosure relates to a heating method and apparatus for a furnace table, and relates to the field of monocrystalline silicon production, the method comprising: and acquiring the seeding power of the heater of the target hearth, wherein the seeding power is the heating power of the heater in the seeding stage. And correcting the set power of the heater according to the seeding power to obtain corrected target power. The heater is controlled to heat the target hearth according to the target power. The method and the device utilize the seeding power to correct the set power of the heater, and control the heater to heat the target furnace table according to the corrected target power, so that the temperature in the furnace of the furnace tables can be ensured to be consistent, and the production quality of monocrystalline silicon is improved.

Description

Method and device for heating furnace table

Technical Field

The present disclosure relates to the field of monocrystalline silicon production, and in particular, to a method and apparatus for heating a furnace table.

Background

In the production process of monocrystalline silicon, firstly, raw materials are placed in a quartz crucible, heated and melted in a monocrystalline furnace, the process is called melting stock, then the temperature is regulated to a proper temperature through a temperature regulation process, seed crystals are immersed into a liquid level for fusion, the melt grows at the tail end of the seed crystals first to perform necking to remove dislocation, the process is called seeding, then the power of a heater is reduced to reduce the lifting speed of the seed crystals to enable the crystals to transversely grow, the process is called shouldering, and after the transverse growth reaches a sufficient diameter, the lifting speed of the seed crystals is increased to enable the crystals to be transferred to longitudinally grow, so that the monocrystalline silicon rod with the set size is obtained.

At present, the heating power of the same-configured hearth heater in the melting stage is set to the same value, and the adjustment range of the heating power in the shouldering process is also set to the same value. Because the thermal system of the single crystal furnace is affected by high temperature, oxidation, damage and replacement in the disassembly and assembly processes and the like in the operation process of the single crystal furnace, the heat preservation performance can be continuously reduced, and the heat preservation performance of the furnace platforms with the same configuration is different. And there is a deviation from a standard value of the power supply cabinet supplying the electric current to the heater, resulting in a difference in the temperature in the furnace given the same value of power for the same configuration of the furnace hearth. Therefore, in the case where the heating powers of the hearth heaters of the same configuration are set to the same value, the temperatures in the plurality of hearths may not be the same, resulting in a difference in efficiency and quality of the single crystal silicon produced, affecting the production quality of the single crystal silicon.

Disclosure of Invention

The object of the present disclosure is to provide a heating method and apparatus of a furnace table for improving the production quality of single crystal silicon.

According to a first aspect of embodiments of the present disclosure, there is provided a method of heating a furnace hearth, the method comprising:

the method comprises the steps of obtaining seeding power of a heater of a target furnace table, wherein the seeding power is heating power of the heater in a seeding stage;

correcting the set power of the heater according to the seeding power to obtain corrected target power;

and controlling the heater to heat the target furnace table according to the target power.

Optionally, the set power includes a preset heating power of the heater; the step of correcting the set power of the heater according to the seeding power to obtain corrected target power comprises the following steps:

Taking the product of the preset heating power and a power correction coefficient as the target power, wherein the power correction coefficient is the ratio of the seeding power to a preset correction parameter.

Optionally, the heater includes a first heater and a second heater, and the set power includes a first set power corresponding to the first heater and a second set power corresponding to the second heater; the step of correcting the set power of the heater according to the seeding power to obtain corrected target power comprises the following steps:

correcting the first set power corresponding to the first heater according to the seeding power to obtain corrected first target power;

correcting the second set power corresponding to the second heater according to the seeding power to obtain corrected second target power;

the controlling the heater to heat the target hearth according to the target power includes:

and controlling the first heater to heat the target hearth according to the first target power, and controlling the second heater to heat the target hearth according to the second target power.

Optionally, the set power includes a preset adjustment amount of heating power of the heater; the step of correcting the set power of the heater according to the seeding power to obtain corrected target power comprises the following steps:

Determining a correction adjustment amount of the heating power according to the preset adjustment amount and the seeding power;

and taking the sum of the seeding power and the correction adjustment amount as the target power.

Optionally, the determining the correction adjustment amount of the heater according to the preset adjustment amount and the seeding power includes:

Taking the product of the preset adjustment amount and a power correction coefficient as the correction adjustment amount, wherein the power correction coefficient is the ratio of the seeding power to a preset correction parameter.

According to a second aspect of embodiments of the present disclosure, there is provided a heating device for a hob, the device comprising:

the device comprises an acquisition module, a control module and a control module, wherein the acquisition module is used for acquiring the seeding power of a heater of a target furnace table, wherein the seeding power is the heating power of the heater in a seeding stage;

the correction module is used for correcting the set power of the heater according to the seeding power to obtain corrected target power;

and the heating module is used for controlling the heater to heat the target hearth according to the target power.

Optionally, the set power includes a preset heating power of the heater; the correction module is used for:

Taking the product of the preset heating power and a power correction coefficient as the target power, wherein the power correction coefficient is the ratio of the seeding power to a preset correction parameter.

Optionally, the heater includes a first heater and a second heater, and the set power includes a first set power corresponding to the first heater and a second set power corresponding to the second heater; the correction module is used for:

correcting the first set power corresponding to the first heater according to the seeding power to obtain corrected first target power;

correcting the second set power corresponding to the second heater according to the seeding power to obtain corrected second target power;

the heating module is used for:

and controlling the first heater to heat the target hearth according to the first target power, and controlling the second heater to heat the target hearth according to the second target power.

Optionally, the set power includes a preset adjustment amount of heating power of the heater; the correction module is used for:

Determining a correction adjustment amount of the heating power according to the preset adjustment amount and the seeding power;

and taking the sum of the seeding power and the correction adjustment amount as the target power.

Optionally, the correction module is configured to:

Taking the product of the preset adjustment amount and a power correction coefficient as the correction adjustment amount, wherein the power correction coefficient is the ratio of the seeding power to a preset correction parameter.

Through the technical scheme, the seeding power of the heater of the target hearth is firstly obtained, the seeding power is the heating power of the heater in the seeding stage, then the setting power of the heater is corrected according to the seeding power, the corrected target power is obtained, and the heater is controlled to heat the target hearth according to the target power. The method and the device utilize the seeding power to correct the set power of the heater, and control the heater to heat the target furnace table according to the corrected target power, so that the temperature in the furnace of the furnace tables can be ensured to be consistent, and the production quality of monocrystalline silicon is improved.

Additional features and advantages of the present disclosure will be set forth in the detailed description which follows.

Drawings

The accompanying drawings are included to provide a further understanding of the disclosure, and are incorporated in and constitute a part of this specification, illustrate the disclosure and together with the description serve to explain, but do not limit the disclosure. In the drawings:

FIG. 1 is a flow chart illustrating a method of heating a furnace platen according to an exemplary embodiment;

FIG. 2 is a schematic diagram of an effective heating power according to the embodiment of FIG. 1;

FIG. 3 is a flow chart illustrating another method of heating a furnace platen according to an exemplary embodiment;

FIG. 4 is a flow chart illustrating another method of heating a furnace platen according to an exemplary embodiment;

fig. 5 is a block diagram of a heating device of a furnace table according to an exemplary embodiment.

Detailed Description

Specific embodiments of the present disclosure are described in detail below with reference to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating and illustrating the disclosure, are not intended to limit the disclosure.

Fig. 1 is a flow chart illustrating a method of heating a furnace table according to an exemplary embodiment, as shown in fig. 1, the method including:

Step 101, obtaining the seeding power of the heater of the target hearth, wherein the seeding power is the heating power of the heater in the seeding stage.

And 102, correcting the set power of the heater according to the seeding power to obtain corrected target power.

Step 103, controlling the heater to heat the target furnace platform according to the target power.

For example, in the seeding stage in the single crystal silicon production process, the crystallization speeds of different hearths are the same, so the actual in-furnace temperatures of the plurality of hearths in the seeding stage are the same. The single crystal furnace is provided with heat by a heater, the heating power of the heater is P _{Actual practice is that of} , the loss power corresponding to the loss heat is P _{Invalidation of} , the effective power for heating the silicon melt is P _{Effective and effective} , and the P _{Actual practice is that of} ＝P _{Invalidation of} +P _{Effective and effective} can be known from the law of conservation of energy. As is known from joule law q=pt, the effective heating power P _{Effective and effective} of the plurality of platens is the same when the temperatures in the plurality of continuously operated single crystal furnaces are the same. Thus, the effective heating power of the heaters of the plurality of hearths is the same during the seeding stage.

As is clear from the fourier law, the heat transfer amount is proportional to the temperature difference, the heat conductivity, and the heat transfer area, and inversely proportional to the wall thickness, and the temperature difference between the inside of the furnace and the outside of the furnace, the heat conductivity of the furnace, the heat transfer area of the furnace, and the wall thickness of the furnace do not change much in a short time according to the actual production of single crystal silicon, so that the heat utilization efficiency η=p _{Effective and effective} /(P _{Invalidation of} +P _{Effective and effective} of the furnace in a short time can be regarded as a constant value. If the internal temperatures of the multiple ovens are to be kept uniform, then the effective heating power of the multiple ovens is required to be kept uniform. Taking two hearths as an example, to achieve the same effective heating power P _{Effective and effective} for the hearths of the same configuration, the relationship between the heating power and seeding power for each hearth is calculated by:

Let the seeding power of the furnace stage a and the furnace stage B be P _A、P_B, respectively, wherein the seeding power can be understood as the proper heating power set by the heater in the seeding stage. The seeding effective power of the furnace platform A and the furnace platform B are equal and are both P _{seeding is effective} , wherein the seeding effective power can be understood as the effective heating power in the seeding stage, and then the formula 1 and the formula 2 can be obtained.

P _A＝P _{seeding is effective} +P_{A Seeding invalidity} ＝(1+(1-η_A)/η_A)*P _{seeding is effective} ＝P _{seeding is effective} /η_A (equation 1)

P _B＝P _{seeding is effective} +P_{B Seeding invalidity} ＝(1+(1-η_B)/η_B)*P _{seeding is effective} ＝P _{seeding is effective} /η_B (formula 2)

Wherein η _A is the heat utilization efficiency of the furnace stage A, P _{A Seeding invalidity} is the seeding reactive power of the furnace stage A, η _B is the heat utilization efficiency of the furnace stage B, and P _{B Seeding invalidity} is the seeding reactive power of the furnace stage B.

In other production stages in the monocrystalline silicon production process, such as a melting stage and a shouldering stage, if the effective heating power of n×p _{seeding is effective} is needed to heat the furnace platform a and the furnace platform B respectively, namely P _{An Effective and effective} ＝P_{Bn Effective and effective} ＝n*P _{seeding is effective} , where P _{An Effective and effective} represents the effective heating power of the furnace platform a and P _{Bn Effective and effective} represents the effective heating power of the furnace platform B, the heating power P _An of the furnace platform a in the current production stage may be shown in formula 3, and the heating power P _Bn of the furnace platform B in the current working condition may be shown in formula 4.

P _An＝P_{An Effective and effective} +P_{An Invalidation of} ＝P_{An Effective and effective} /η_A＝n*P _{seeding is effective} /η_A＝n*P_A (equation 3)

P _Bn＝P_{Bn Effective and effective} +P_{Bn Invalidation of} ＝P_{Bn Effective and effective} /η_B＝n*P _{seeding is effective} /η_B＝n*P_B (equation 4)

Therefore, in other production stages, the actual furnace temperature of the two furnaces with different heat preservation performances is the same, that is, the effective heating power of the two furnaces with different heat preservation performances is the same, and the heating power of the two furnaces needs to be set to be the same multiple of the seeding power of the two furnaces. Similarly, in the case of more than two multiple hearths, the heating power of each hearth can be set to be the same multiple of the seeding power of the hearth, so as to ensure that the effective heating powers of the multiple hearths are the same, and further ensure that the temperatures in the multiple hearths are the same.

Because the heat preservation performance of the single crystal furnaces with the same configuration has certain difference, the effective heating power of the plurality of single crystal furnaces is not necessarily the same under the condition of setting the same heating power, so that the temperatures in the plurality of single crystal furnaces are not necessarily the same. From the above analysis, the heating power of each furnace stage is set to be the same multiple of the seeding power of each furnace stage, so as to ensure that the effective heating powers of the furnace stages are the same, and further ensure that the temperatures in the furnace stages are the same. Therefore, the set power of the heater can be corrected according to the seeding power, and more accurate target power can be obtained. The set power may be a preset heating power or a preset adjustment amount of the heating power, that is, the heating power may be directly corrected to obtain the target power, or the adjustment amount of the heating power may be corrected, and the sum of the seeding power and the corrected adjustment amount is taken as the target power, which is not particularly limited in the disclosure.

The method comprises the steps of firstly obtaining the seeding power of a target furnace table, wherein the target furnace table is any one of a plurality of furnace tables, the seeding power can be the proper heating power set for a heater in the previous production process or the proper heating power set according to the welding state of seed crystals and liquid level in the seeding stage of the current production process. And then, the set power of the heater can be corrected according to the seeding power, so as to obtain corrected target power. In some embodiments, the power correction coefficient corresponding to the target furnace stage may be obtained according to the seeding power, where the power correction coefficient is a ratio of the seeding power to a preset correction parameter, the correction parameter may be an average value of the seeding powers of the heaters of the multiple furnace stages, or may be set empirically, which is not specifically limited in this disclosure, and the correction parameter may be 60kW, for example. Taking the preset heating power as an example, the product of the preset power and the power correction coefficient can be used as target power, and the heater is controlled to output target power so as to heat the target furnace table according to the target power, thereby ensuring that the temperatures in the furnace tables are the same. Table 1 shows the respective powers of the furnace stage a, the furnace stage B, the furnace stage C, and the furnace stage D, and the effective heating power before correction in table 1 is the product of the set power and the heat utilization efficiency, and the effective heating power after correction is the product of the target power and the heat utilization efficiency.

Stove table

Seeding power

Seeding effective power

Setting power

Effective heating power before correction

Target power

Corrected effective heating power

A

57

ηA*57

110

1.93*ηA*57

104.5

1.83*ηA*57

B

59

ηB*59

110

1.86*ηB*59

108.2

1.83*ηB*59

C

61

ηC*61

110

1.8*ηC*61

111.8

1.83*ηC*61

D

62

ηD*62

110

1.77*ηD*62

113.7

1.83*ηD*62

TABLE 1

Since each oven table P _{seeding is effective} was equal, assuming that P _{seeding is effective} =20 kW, table 2 can be obtained:

Stove table	Seeding power	Seeding effective power	Setting power	Effective heating power before correction	Target power	Corrected effective heating power
							A	57	20.00	110	38.60	104.5	36.67
B	59	20.00	110	37.29	108.2	36.67
							C	61	20.00	110	36.07	111.8	36.67
D	62	20.00	110	35.48	113.7	36.67

TABLE 2

In table 2, the effective heating powers before correction and the effective heating powers after correction of the furnace stage a, the furnace stage B, the furnace stage C, and the furnace stage D are shown in fig. 2, and the effective heating powers before correction are shown by the broken lines in fig. 2 and the effective heating powers after correction are shown by the solid lines. As can be seen from table 2 and fig. 2, the corrected effective heating powers of the furnace stage a, the furnace stage B, the furnace stage C, and the furnace stage D are equal. In this way, the set power is corrected by using the seeding power to obtain the target power, and the heater is controlled to heat the target furnace platforms according to the target power, so that the heating power of each furnace platform can be ensured to be set to be the same multiple of the seeding power of each furnace platform, and the temperature in the furnace platforms is ensured to be the same.

In summary, the present disclosure firstly obtains the seeding power of the heater of the target furnace stage, where the seeding power is the heating power of the heater in the seeding stage, then corrects the set power of the heater according to the seeding power to obtain the corrected target power, and controls the heater to heat the target furnace stage according to the target power. The method and the device utilize the seeding power to correct the set power of the heater, and control the heater to heat the target furnace table according to the corrected target power, so that the temperature in the furnace of the furnace tables can be ensured to be consistent, and the production quality of monocrystalline silicon is improved.

In one application scenario, the set power includes a preset heating power of the heater. One implementation of step 102 may be:

Taking the product of the preset heating power and a power correction coefficient as target power, wherein the power correction coefficient is the ratio of seeding power to the preset correction parameter.

For example, taking the current production stage as the melting stage as an example, the set power may be a preset heating power of the heater, and the preset heating power may be understood as a preset heating power of the melting stage. Firstly, a correction parameter can be preset, and the ratio of the seeding power to the preset correction parameter is used as a power correction coefficient so as to correct the preset heating power through the power correction coefficient. In some embodiments, as shown in equation 5, the product of the preset heating power and the power correction coefficient may be taken as the target power.

P _{Target object} ＝P _{Preset heating} *P _Seeding /P _correction (equation 5)

Wherein P _{Target object} is target power, P _{Preset heating} is preset heating power, P _Seeding is seeding power, and P _correction is correction parameter. Thus, the preset heating power is corrected by the formula 5, and the obtained target power is (P _{Preset heating} /P _correction ) times of the seeding power. Because the preset heating power of the multiple furnace platforms of the same model is the same, the correction coefficient is a fixed value, so (P _{Preset heating} /P _correction ) is a fixed value, and the target power of each furnace platform is (P _{Preset heating} /P _correction ) times of the correction power of the furnace platform, thereby ensuring that the effective heating power of the multiple furnace platforms is the same, and further ensuring that the temperature in the furnace of the multiple furnace platforms is the same.

Taking the example that the crystal pulling power of the furnace platform A is 57kW, the crystal pulling power of the furnace platform B is 63kW, the correction parameter is 60kW, the preset heating power is 200kW, the power correction coefficient of the furnace platform A is 57kW/60 kW=0.95, the power correction coefficient of the furnace platform B is 63kW/60 kW=1.05, and the target powers obtained after the correction of the furnace platform A and the furnace platform B are respectively:

P_{A Target object} ＝200kW*57kW/60kW＝190kW

P_{B Target object} ＝200kW*63kW/60kW＝210kW

The target power P _{A Target object} of the corrected furnace stage A is 190kW, which is 3.33 times of the seeding power 57kW, and the corrected power is-10 kW. The target power P _{B Target object} of the corrected furnace stage B is 210kW, which is 3.33 times of the seeding power 63kW, and the corrected power is +10kW. The target power after correction of the furnace platform A and the furnace platform B is 3.33 times of the corresponding seeding power, so that the furnace temperatures of the furnace platform A and the furnace platform B are kept consistent.

Fig. 3 is a flowchart illustrating another heating method of a furnace stage according to an exemplary embodiment, and as shown in fig. 3, the heater includes a first heater and a second heater, and the set power includes a first set power corresponding to the first heater and a second set power corresponding to the second heater. Step 102 may be implemented by:

and 1021, correcting the first set power corresponding to the first heater according to the seeding power to obtain a corrected first target power.

Step 1022, correcting the second set power corresponding to the second heater according to the seeding power to obtain a corrected second target power.

Accordingly, one implementation of step 103 may be:

The first heater is controlled to heat the target hearth at a first target power and the second heater is controlled to heat the target hearth at a second target power.

For example, the heater of the target oven may include a first heater and a second heater, the first heater may be a main heater for heating an upper half of the target oven, and the second heater may be a bottom heater for heating a lower half of the target oven, and the first heater and the second heater may be simultaneously turned on to heat the oven when a set temperature of the oven is high. Accordingly, the set power may include a first set power corresponding to the first heater and a second set power corresponding to the second heater. In some embodiments, the first set power corresponding to the first heater may be corrected according to the seeding power to obtain a corrected first target power, and the second set power corresponding to the second heater may be corrected according to the seeding power to obtain a corrected second target power. The first heater is controlled to heat the target hearth at a first target power and the second heater is controlled to heat the target hearth at a second target power.

In some embodiments, the preset heating power may include a first preset heating power and a second preset heating power, and a product of the first preset heating power and a power correction coefficient may be taken as the first target power, and a product of the second preset heating power and the power correction coefficient may be taken as the second target power.

Taking 57kW of crystal pulling power of the furnace platform A, 63kW of crystal pulling power of the furnace platform B, 60kW of correction parameter, 90kW of first preset heating power and 110kW of second preset heating power as examples, the first target power and the second target power obtained after correction of the furnace platform A are respectively:

P_{A1 Target object} ＝90kW*57kW/60kW＝85.5kW

P_{A2 Target object} ＝110kW*57kW/60kW＝104.5kW

The first target power P _{A1 Target object} of the modified oven stage a was 85.5kW, the second target power P _{A2 Target object} was 104.5kW, the total power of the oven stage a (sum of the first target power and the second target power) was 190kW, which was 3.33 times the seeding power 57 kW.

The first target power and the second target power obtained after the correction of the furnace platform B are respectively as follows:

P_{B1 Target object} ＝90kW*63kW/60kW＝94.5kW

P_{B2 Target object} ＝110kW*63kW/60kW＝115.5kW

The first target power P _{B1 Target object} of the modified oven table B was 94.5kW, the first target power P _{B2 Target object} was 115.5kW, the total power of the oven table B (sum of the first target power and the second target power) was 210kW, which was 3.33 times the seeding power 63 kW. The total power of the furnace platform A and the furnace platform B after correction is 3.33 times of the corresponding seeding power, so that the actual temperatures in the furnace of the furnace platform A and the furnace platform B are kept consistent.

Fig. 4 is a flowchart illustrating another heating method of the oven table according to an exemplary embodiment, and as shown in fig. 4, the set power includes a preset adjustment amount of the heating power of the heater. Step 102 may be implemented by:

step 1023, determining the correction adjustment amount of the heating power according to the preset adjustment amount and the seeding power.

Step 1024, taking the sum of the seeding power and the correction adjustment amount as the target power.

In another application scenario, one implementation of step 1023 may be:

Taking the product of the preset adjustment amount and a power correction coefficient as a correction adjustment amount, wherein the power correction coefficient is the ratio of seeding power to a preset correction parameter.

For example, taking the current production stage as the shouldering stage as an example, the set power may be a preset adjustment amount of the heating power of the heater, where the preset adjustment amount may be understood as an adjustment amount of the heating power of the shouldering stage set in advance, for example: +10kw, -10kw. Firstly, the preset adjustment amount can be corrected according to the seeding power to obtain the corrected adjustment amount of the heating power, and then the sum of the seeding power and the corrected adjustment amount is taken as the target power. In some embodiments, the correction parameter may be preset, and the ratio of the seeding power to the preset correction parameter is used as a power correction coefficient, so as to correct the preset adjustment value through the power correction coefficient. The correction parameter may be an average value of the seeding powers of the heaters of the plurality of hearths, or may be empirically set, which is not particularly limited in the present disclosure. In one implementation, as shown in equation 6, the product of the preset adjustment value and the power correction coefficient may be used as the correction adjustment amount, and the target power may be obtained through equation 7.

ΔP _{Correction adjustment} ＝ΔP _{Preset adjustment} *P _Seeding /P _correction (equation 6)

P _{Target object} ＝P _Seeding +ΔP _{Correction adjustment} (equation 7)

Wherein P _{Correction adjustment} is a correction adjustment amount, P _{Preset adjustment} is a preset adjustment amount of power, P _Seeding is seeding power, and P _correction is a correction parameter. Thus, the preset adjustment amount is corrected, the target power is determined according to the obtained correction adjustment amount, the obtained target power is 1+P _{Preset adjustment} /P _correction times of the seeding power, and the preset heating powers of the furnace platforms are the same, the correction coefficient is a fixed value, so that the preset heating power of the furnace platforms is 1+P _{Preset adjustment} /P _correction , the target power of each furnace platform is 1+P _{Preset adjustment} /P _correction times of the correction power of the furnace platform, and therefore the effective heating powers of the furnace platforms are the same after the heating power of the furnace platforms is adjusted each time, and the furnace temperatures of the furnace platforms are further ensured to be the same.

Taking the example that the crystal pulling power of the furnace platform A is 57kW, the crystal pulling power of the furnace platform B is 63kW, the correction parameter is 60kW, the preset adjustment amount is-10 kW, and the correction adjustment amounts obtained after the furnace platform A and the furnace platform B are corrected are respectively as follows:

ΔP_{A Correction adjustment} ＝-10kW*57kW/60kW＝-9.5kW

ΔP_{B Correction adjustment} ＝-10kW*63kW/60kW＝-10.5kW

the target powers of the furnace stage A and the furnace stage B are respectively as follows:

P_{A Target object} ＝57kW-9.5kW＝47.5kW

P_{B Target object} ＝63kW-10.5kW＝52.5kW

The target power P _{A Target object} of the corrected furnace stage A is 47.5kW, which is 0.83 times of the seeding power, and the corrected power is +0.5kW. The target power P _{B Target object} of the corrected furnace stage B is 52.5kW, which is 0.83 times of the seeding power, and the corrected power is-0.5 kW. The target power after correction of the furnace platform A and the furnace platform B is 0.83 times of the corresponding seeding power, so that the actual temperatures in the furnace of the furnace platform A and the furnace platform B are kept consistent.

In summary, the present disclosure firstly obtains the seeding power of the heater of the target furnace stage, where the seeding power is the heating power of the heater in the seeding stage, then corrects the set power of the heater according to the seeding power to obtain the corrected target power, and controls the heater to heat the target furnace stage according to the target power. The method and the device utilize the seeding power to correct the set power of the heater, and control the heater to heat the target furnace table according to the corrected target power, so that the temperature in the furnace of the furnace tables can be ensured to be consistent, and the production quality of monocrystalline silicon is improved.

Fig. 5 is a block diagram of a heating apparatus of a furnace table, according to an exemplary embodiment, as shown in fig. 5, the apparatus 200 includes:

The obtaining module 201 is configured to obtain seeding power of a heater of the target oven stage, where the seeding power is heating power of the heater in a seeding stage.

The correction module 202 is configured to correct the set power of the heater according to the seeding power, and obtain the corrected target power.

And a heating module 203 for controlling the heater to heat the target hearth according to the target power.

In one application scenario, the set power includes a preset heating power of the heater. The correction module 202 is configured to:

Taking the product of the preset heating power and a power correction coefficient as target power, wherein the power correction coefficient is the ratio of seeding power to the preset correction parameter.

In another application scenario, the heater includes a first heater and a second heater, and the set power includes a first set power corresponding to the first heater and a second set power corresponding to the second heater. The correction module is used for:

And correcting the first set power corresponding to the first heater according to the seeding power to obtain corrected first target power.

And correcting the second set power corresponding to the second heater according to the seeding power to obtain corrected second target power.

Accordingly, the heating module 203 is configured to:

The first heater is controlled to heat the target hearth at a first target power and the second heater is controlled to heat the target hearth at a second target power.

In another application scenario, the set power includes a preset adjustment of the heating power of the heater. The correction module 202 is configured to:

and determining the correction adjustment amount of the heating power according to the preset adjustment amount and the seeding power.

The sum of the seeding power and the correction adjustment amount is used as the target power.

In another application scenario, the correction module 202 is configured to:

Taking the product of the preset adjustment amount and a power correction coefficient as a correction adjustment amount, wherein the power correction coefficient is the ratio of seeding power to a preset correction parameter.

In summary, the present disclosure firstly obtains the seeding power of the heater of the target furnace stage, where the seeding power is the heating power of the heater in the seeding stage, then corrects the set power of the heater according to the seeding power to obtain the corrected target power, and controls the heater to heat the target furnace stage according to the target power. The method and the device utilize the seeding power to correct the set power of the heater, and control the heater to heat the target furnace table according to the corrected target power, so that the temperature in the furnace of the furnace tables can be ensured to be consistent, and the production quality of monocrystalline silicon is improved.

The preferred embodiments of the present disclosure have been described in detail above with reference to the accompanying drawings, but the present disclosure is not limited to the specific details of the embodiments described above, and various simple modifications may be made to the technical solutions of the present disclosure within the scope of the technical concept of the present disclosure, and all the simple modifications belong to the protection scope of the present disclosure.

In addition, the specific features described in the foregoing embodiments may be combined in any suitable manner, and in order to avoid unnecessary repetition, the present disclosure does not further describe various possible combinations.

Moreover, any combination between the various embodiments of the present disclosure is possible as long as it does not depart from the spirit of the present disclosure, which should also be construed as the disclosure of the present disclosure.

Claims (10)

1. A method of heating a furnace hearth, the method comprising:

the method comprises the steps of obtaining seeding power of a heater of a target furnace table, wherein the seeding power is heating power of the heater in a seeding stage;

correcting the set power of the heater according to the seeding power to obtain corrected target power;

and controlling the heater to heat the target furnace table according to the target power.

2. The method of claim 1, wherein the set power comprises a preset heating power of the heater; the step of correcting the set power of the heater according to the seeding power to obtain corrected target power comprises the following steps:

Taking the product of the preset heating power and a power correction coefficient as the target power, wherein the power correction coefficient is the ratio of the seeding power to a preset correction parameter.

3. The method of claim 1, wherein the heater comprises a first heater and a second heater, and the set power comprises a first set power corresponding to the first heater and a second set power corresponding to the second heater; the step of correcting the set power of the heater according to the seeding power to obtain corrected target power comprises the following steps:

correcting the first set power corresponding to the first heater according to the seeding power to obtain corrected first target power;

correcting the second set power corresponding to the second heater according to the seeding power to obtain corrected second target power;

the controlling the heater to heat the target hearth according to the target power includes:

and controlling the first heater to heat the target hearth according to the first target power, and controlling the second heater to heat the target hearth according to the second target power.

4. The method of claim 1, wherein the set power comprises a preset adjustment amount of heating power of the heater; the step of correcting the set power of the heater according to the seeding power to obtain corrected target power comprises the following steps:

Determining a correction adjustment amount of the heating power according to the preset adjustment amount and the seeding power;

and taking the sum of the seeding power and the correction adjustment amount as the target power.

5. The method of claim 4, wherein determining a revised adjustment of the heater based on the preset adjustment and the seeding power comprises:

Taking the product of the preset adjustment amount and a power correction coefficient as the correction adjustment amount, wherein the power correction coefficient is the ratio of the seeding power to a preset correction parameter.

6. A heating device for a furnace hearth, the device comprising:

the device comprises an acquisition module, a control module and a control module, wherein the acquisition module is used for acquiring the seeding power of a heater of a target furnace table, wherein the seeding power is the heating power of the heater in a seeding stage;

the correction module is used for correcting the set power of the heater according to the seeding power to obtain corrected target power;

and the heating module is used for controlling the heater to heat the target hearth according to the target power.

7. The apparatus of claim 6, wherein the set power comprises a preset heating power of the heater; the correction module is used for:

Taking the product of the preset heating power and a power correction coefficient as the target power, wherein the power correction coefficient is the ratio of the seeding power to a preset correction parameter.

8. The apparatus of claim 6, wherein the heater comprises a first heater and a second heater, the set power comprising a first set power corresponding to the first heater and a second set power corresponding to the second heater; the correction module is used for:

correcting the first set power corresponding to the first heater according to the seeding power to obtain corrected first target power;

correcting the second set power corresponding to the second heater according to the seeding power to obtain corrected second target power;

the heating module is used for:

and controlling the first heater to heat the target hearth according to the first target power, and controlling the second heater to heat the target hearth according to the second target power.

9. The apparatus of claim 6, wherein the set power comprises a preset adjustment amount of heating power of the heater; the correction module is used for:

Determining a correction adjustment amount of the heating power according to the preset adjustment amount and the seeding power;

and taking the sum of the seeding power and the correction adjustment amount as the target power.

10. The apparatus of claim 9, wherein the correction module is configured to:

Taking the product of the preset adjustment amount and a power correction coefficient as the correction adjustment amount, wherein the power correction coefficient is the ratio of the seeding power to a preset correction parameter.