CN117926389A - Single crystal furnace silicon rod abnormality detection method, device and equipment - Google Patents
Single crystal furnace silicon rod abnormality detection method, device and equipment Download PDFInfo
- Publication number
- CN117926389A CN117926389A CN202211266040.1A CN202211266040A CN117926389A CN 117926389 A CN117926389 A CN 117926389A CN 202211266040 A CN202211266040 A CN 202211266040A CN 117926389 A CN117926389 A CN 117926389A
- Authority
- CN
- China
- Prior art keywords
- silicon rod
- sample image
- position data
- variance
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 294
- 239000010703 silicon Substances 0.000 title claims abstract description 294
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 291
- 238000001514 detection method Methods 0.000 title claims abstract description 109
- 239000013078 crystal Substances 0.000 title claims abstract description 73
- 230000005856 abnormality Effects 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 claims abstract description 97
- 238000005259 measurement Methods 0.000 claims abstract description 75
- 230000002159 abnormal effect Effects 0.000 claims abstract description 40
- 238000003860 storage Methods 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 8
- 239000007788 liquid Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000005070 sampling Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000003993 interaction Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000002231 Czochralski process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000011897 real-time detection Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to the technical field of monocrystalline silicon, in particular to a method, a device and equipment for detecting abnormality of a silicon rod of a monocrystalline furnace. The silicon rod abnormality detection method of the single crystal furnace comprises the following steps: acquiring a sample image in the single crystal furnace, acquiring position data of a preset detection point on the sample image, calculating a deviation degree value of the position data in a preset measurement period, and determining the growth state of the silicon rod according to the deviation degree value. According to the method, the sample image in the single crystal furnace is obtained in real time, the position data of the preset detection point on the sample image is obtained, the deviation degree value of the position data in the preset measurement period is calculated, the growth state of the silicon rod can be determined through the deviation degree value, the abnormal silicon rod detection method of the single crystal furnace can detect the state of the silicon rod in real time, the abnormal silicon rod state is identified, the detection precision and the detection efficiency of the abnormal silicon rod state are improved, the abnormal man-hour increase after the abnormal silicon rod state is avoided, and the productivity of the silicon rod is improved.
Description
Technical Field
The invention relates to the technical field of monocrystalline silicon, in particular to a method, a device and equipment for detecting abnormality of a silicon rod of a monocrystalline furnace.
Background
The preparation process of the monocrystalline silicon rod material mainly comprises a Czochralski method (Czochralski process/CZ), and the polycrystalline silicon raw material is refined into the monocrystalline silicon rod by the Czochralski method. In the process of preparing the monocrystalline silicon rod by the Czochralski method, the equal-diameter growth process and the ending process of the silicon rod are both vital links, and the follow-up process is directly influenced. Abnormal conditions such as abnormal distortion, deformation, arc striking and the like of the silicon rod can be caused in the equal-diameter growth process of the silicon rod due to factors such as temperature, raw materials and the like, and abnormal conditions of ending and breaking can occur in the ending process of the silicon rod.
At present, the equal-diameter growth process and the ending process both need manual real-time detection, when the abnormal condition of the silicon rod just occurs, the silicon rod is difficult to judge by naked eyes, if the abnormal condition of the silicon rod is not found manually or is not found timely, the abnormal condition of the silicon rod is judged for a period of time after the abnormal condition, the abnormal working time is increased after the abnormal condition of the silicon rod, and the single production is affected.
Disclosure of Invention
The invention provides a method for detecting abnormality of a silicon rod of a single crystal furnace, which solves or partially solves the problem that abnormality of the silicon rod cannot be found in time in the prior art.
In a first aspect, an embodiment of the present invention provides a method for detecting abnormality of a silicon rod in a single crystal furnace, where the method includes: acquiring a sample image in a single crystal furnace; acquiring position data of a preset detection point on the sample image; calculating the deviation degree value of the position data in a preset measurement period; and determining the growth state of the silicon rod according to the deviation degree value.
Further, the acquiring the sample image in the single crystal furnace includes: in the equal-diameter growth process of the silicon rod, a sample image of the silicon rod is obtained; or, in the equal-diameter growth process and/or the ending process of the silicon rod, a sample image of the heat shield reflection is obtained.
Further, in the case that the sample image is the sample image of the silicon rod, in the step of acquiring the position data of the preset detection point on the sample image, the method for acquiring the preset detection point includes: setting a first measuring line in a sample image of the silicon rod, wherein the first measuring line intersects with the periphery of the silicon rod, and the first measuring line is a horizontal line and/or a vertical line; at least one intersection point of the first measuring line and the periphery of the silicon rod is the preset detection point.
Further, the step of acquiring the position data of the preset detection point on the sample image includes: and acquiring coordinates of the preset detection point in the sample image.
Further, the step of calculating the deviation degree value of the position data in the preset measurement period comprises the following steps of; and calculating the variance of the abscissa of the preset detection point and/or the variance of the ordinate of the preset detection point in the multi-frame sample image in the preset measurement period.
Further, the step of calculating the deviation degree value of the position data in the preset measurement period further comprises the step of calculating the variance of the diameter length of the silicon rod in the preset measurement period.
Further, the step of determining the growth state of the silicon rod according to the deviation degree value comprises the following steps: determining that the growth state of the silicon rod is normal under the condition that the deviation degree value of the position data is smaller than a first variance threshold and the variance of the diameter length of the silicon rod is smaller than a second variance threshold; determining that the growth state of the silicon rod is normal, but the surface of the silicon rod is rough under the condition that the deviation degree value of the position data is smaller than a first variance threshold value and the variance of the diameter length of the silicon rod is larger than or equal to a second variance threshold value; determining that the growth state of the silicon rod is abnormal under the condition that the deviation degree value of the position data is larger than or equal to a first variance threshold value and the variance of the diameter length of the silicon rod is smaller than a second variance threshold value, wherein the silicon rod is arc-striking; and determining that the growth state of the silicon rod is abnormal and the silicon rod is distorted or deformed under the condition that the deviation degree value of the position data is larger than or equal to a first variance threshold and the variance of the diameter length of the silicon rod is larger than or equal to a second variance threshold.
Further, in the step of acquiring the position data of the preset detection point on the sample image, in the case that the sample image is the sample image of the thermal screen reflection, the method for acquiring the preset detection point includes: setting a second measuring line in the sample image of the heat shield reflection, wherein the second measuring line intersects with the reflection edge and is a horizontal line; at least one intersection point of the second measuring line and the reflection edge is the preset detection point.
Further, the step of acquiring the position data of the preset detection point on the sample image includes: and acquiring coordinates of the preset detection point in the sample image.
Further, the step of calculating the deviation degree value of the position data in the preset measurement period includes: and calculating the variance of the abscissa of the preset detection point in the multi-frame sample image in the preset measurement period.
Further, the step of determining the growth state of the silicon rod according to the deviation degree value comprises the following steps: under the condition that the deviation degree value is smaller than a variance threshold value, determining that the growth state of the silicon rod is normal; and determining that the growth state of the silicon rod is abnormal under the condition that the deviation degree value is larger than or equal to a variance threshold value.
Further, the abnormal growth state of the silicon rod is ending and breaking.
Further, the preset measurement period includes: the silicon rod rotates at least one turn for the time.
In a second aspect, an embodiment of the present invention provides a device for detecting an abnormality of a silicon rod in a single crystal furnace, where the device includes a sample image acquisition module, a position data acquisition module, a deviation degree value generation module, and a growth state determination module, where the sample image acquisition module is used to acquire a sample image in the single crystal furnace; the position data acquisition module is used for acquiring position data of a preset detection point on the sample image; the deviation degree value generation module is used for calculating the deviation degree value of the position data in a preset measurement period; the growth state determining module is used for determining the growth state of the silicon rod according to the deviation degree value.
In a third aspect, an embodiment of the present invention provides a device for detecting abnormality of a silicon rod in a single crystal furnace, where the device includes: the silicon rod abnormality detection method comprises the steps of an interface, a bus, a memory and a processor, wherein the interface, the memory and the processor are connected through the bus, the memory is used for storing an executable program, and the processor is configured to run the executable program to realize the silicon rod abnormality detection method of the single crystal furnace.
In a fourth aspect, an embodiment of the present invention provides a computer readable storage medium, where an executable program is stored, where the executable program is executed by a processor to implement the steps of the method for detecting silicon rod abnormality of a single crystal furnace as described above.
The silicon rod abnormality detection method for the single crystal furnace provided by the embodiment of the invention comprises the following steps: acquiring a sample image in the single crystal furnace, acquiring position data of a preset detection point on the sample image, calculating a deviation degree value of the position data in a preset measurement period, and determining the growth state of the silicon rod according to the deviation degree value. The method for detecting the silicon rod abnormality of the single crystal furnace can detect the silicon rod state in real time, identify the silicon rod state abnormality, improve the detection precision and the detection efficiency of the silicon rod abnormality, avoid the increase of abnormal working hours after the silicon rod state abnormality, and improve the productivity of the silicon rod.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the description of the embodiments of the present invention will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart showing steps of a method for detecting abnormality of a silicon rod in a single crystal furnace according to a first embodiment of the present invention;
FIG. 2 is a schematic view showing the structure of a silicon rod manufacturing apparatus according to a first embodiment of the present invention;
FIG. 3 is a flow chart showing steps of a method for detecting abnormality of a silicon rod in a single crystal furnace according to a second embodiment of the present invention;
FIG. 4 is a schematic view of a sample image of a silicon rod in a second embodiment of the invention;
FIG. 5 is a schematic view of another example of a silicon rod according to the second embodiment of the present invention;
FIG. 6 is a flow chart showing steps of a method for detecting abnormality of a silicon rod in a single crystal furnace according to a third embodiment of the present invention;
FIG. 7 is a schematic view showing the structure of a silicon rod manufacturing apparatus according to a third embodiment of the present invention;
FIG. 8 is a schematic view of a sample image showing a thermal screen reflection in accordance with a third embodiment of the present invention;
FIG. 9 is a block diagram showing a silicon rod abnormality detection apparatus for a single crystal furnace according to a third embodiment of the present invention;
fig. 10 shows a schematic logic structure of a single crystal furnace silicon rod abnormality detection device according to an embodiment of the present invention.
Reference numerals illustrate:
1-silicon rod, 2-single crystal furnace, 3-crucible, 4-molten silicon, 5-heat shield, 6-preset detection point, 7-first measuring line, 8-reflection, 9-second measuring line, 10-aperture, 501-interface, 502-processor, 503-memory, 504-bus.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
Referring to fig. 1, fig. 1 shows a flowchart of steps of a method for detecting abnormality of a silicon rod in a single crystal furnace according to a first embodiment of the present invention. The method for detecting the abnormality of the silicon rod in the single crystal furnace is used for detecting the abnormality of the silicon rod in the single crystal furnace and can comprise the following steps:
And step 101, acquiring a sample image in the single crystal furnace.
Referring to fig. 2, a schematic view of a silicon rod manufacturing apparatus in accordance with a first embodiment of the present invention is shown. In the embodiment of the invention, when the Czochralski method is adopted to prepare the single crystal silicon rod, a single crystal furnace 2 is used to melt high-purity polysilicon silicon material in a quartz crucible 3, the lower end of a single crystal seed crystal is immersed into the liquid level of molten silicon 4 in the quartz crucible, the lower end of the single crystal seed crystal is sequentially subjected to the steps of seeding, shouldering, shoulder rotating, equal-diameter growth and ending, and simultaneously the single crystal seed crystal and the crucible 3 are matched to rotate, so that the preparation of the silicon rod 1 is completed.
Specifically, when preparing the monocrystalline silicon rod, image sampling can be carried out in the monocrystalline furnace with a certain sampling period, and a sample image in the monocrystalline furnace is obtained. The sampling period may be set according to the use requirement. For example, one frame of sample image is acquired every 0.2 seconds.
In the embodiment of the invention, the sample image in the single crystal furnace can be acquired through an external camera device, and the external camera device is arranged on the silicon rod preparation device, for example, on an observation window of the single crystal furnace. The external image pickup device may be, for example, a CCD camera.
Step 102, acquiring position data of a preset detection point on a sample image.
In the step, a two-dimensional coordinate system and a preset detection point are set on the acquired sample image, and position data of the preset detection point in the two-dimensional coordinate system is acquired, wherein the position data comprises coordinates of the preset detection point.
In the embodiment of the invention, the two-dimensional coordinate system is a plane rectangular coordinate system formed by two numerical axes which are mutually perpendicular on the same plane and have a common origin, and the arrangement of the two-dimensional coordinate system in the sample image can be set according to the use requirement, for example, the two-dimensional coordinate system takes the upper left corner of the sample image as the origin, the horizontal direction is the positive direction of the X axis, and the vertical direction is the positive direction of the Y axis.
The preset detection point is a position which can represent the growth state of the silicon rod in the sample image. The preparation of the silicon rod comprises the steps of seeding, shouldering, shoulder rotating, equal-diameter growth and ending, and corresponding preset detection points are set in the sample images obtained in the steps. For example, in the process of the equal diameter growth of the silicon rod, a preset detection point is arranged at the periphery of the silicon rod of the sample image; in the process of ending the silicon rod, a preset detection point is arranged at a heat screen reflection position of a sample image.
Step 103, calculating the deviation degree value of the position data in the preset measurement period.
In this step, a deviation degree value of the position data in the preset measurement period is calculated from the position data of the preset detection point on the acquired sample image.
In the embodiment of the invention, the preset measurement period is set according to actual use requirements, for example, the preset measurement period is a silicon rod rotation period, for example, when the silicon rod rotation period is 6 seconds, the preset measurement period is 6 seconds. For example, the preset measurement period is longer than the silicon rod rotation period, for example, when the silicon rod rotation period is 6 seconds, the preset measurement period is 10 seconds.
When the position data comprises the coordinates of the preset detection point, calculating the coordinate variance of the position data in the preset measurement period in the deviation degree value of the position data in the preset measurement period.
And 104, determining the growth state of the silicon rod according to the deviation degree value.
In this step, since the degree of deviation value of the position data in the preset measurement period can determine the growth state of the silicon rod in the preset measurement period, the growth state of the silicon rod can be determined from the degree of deviation value.
Further, under the condition that the deviation degree value is smaller than the variance threshold value, the growth state of the silicon rod is determined to be normal. And determining that the growth state of the silicon rod is abnormal under the condition that the deviation degree value is larger than or equal to the variance threshold value.
In the embodiment of the application, the method for detecting the abnormality of the silicon rod of the single crystal furnace comprises the following steps: acquiring a sample image in the single crystal furnace, acquiring position data of a preset detection point on the sample image, calculating a deviation degree value of the position data in a preset measurement period, and determining the growth state of the silicon rod according to the deviation degree value. According to the method, the sample image in the single crystal furnace is obtained in real time, the position data of the preset detection point on the sample image is obtained, the deviation degree value of the position data in the preset measurement period is calculated, the growth state of the silicon rod can be determined through the deviation degree value, the abnormal silicon rod detection method of the single crystal furnace can detect the state of the silicon rod in real time, the abnormal silicon rod state is identified, the detection precision and the detection efficiency of the abnormal silicon rod state are improved, the abnormal man-hour increase after the abnormal silicon rod state is avoided, and the productivity of the silicon rod is improved.
Example two
Referring to fig. 3, a step flow diagram of a method for detecting abnormality of a silicon rod in a single crystal furnace according to a second embodiment of the present invention is shown. In an embodiment of the present invention, obtaining a sample image in a single crystal furnace includes: in the process of the equal-diameter growth of the silicon rod, a sample image of the silicon rod is obtained, and at the moment, the method for detecting the abnormality of the silicon rod of the single crystal furnace can comprise the following steps:
In step 201, a sample image of a silicon rod is obtained during the equal diameter growth process of the silicon rod.
In the step, in the equal-diameter growth process of the silicon rod, the silicon rod rotates according to a certain period, and the image of the equal-diameter growth process of the silicon rod can be sampled in a certain sampling period to obtain a sample image of the silicon rod. For example, the silicon rod rotation period during the equal diameter growth of the silicon rod is 6 seconds, and one frame of sample image is acquired every 0.2 seconds in the rotation period.
In the embodiment of the invention, the sample image of the silicon rod in the equal-diameter growth process can be acquired through an external camera device. Because the external camera device is obliquely arranged relative to the axial direction of the silicon rod, the sample image of the silicon rod, which is acquired by the external camera device in the equal diameter growth process of the silicon rod, is obliquely arranged relative to the axial direction of the silicon rod, and generally contains surface state information within the range of 180 degrees of the silicon rod.
Step 202, acquiring coordinates of at least one intersection point of the periphery of the silicon rod and the first measuring line in the sample image.
In this step, a two-dimensional coordinate system is set on the acquired sample image, and at least one intersection point of the periphery of the silicon rod in the acquired sample image and the first measurement line is set in the two-dimensional coordinate system, wherein the coordinates include an abscissa and an ordinate. The preset detection point is at least one intersection point of the first measurement line and the periphery of the silicon rod.
Further, the method for acquiring the preset detection point comprises the following steps: and setting a first measuring line in the sample image of the silicon rod, wherein the first measuring line intersects with the periphery of the silicon rod, and the first measuring line is a horizontal line and/or a vertical line. At least one intersection point of the first measuring line and the periphery of the silicon rod is the preset detection point.
For example, referring to fig. 4, a schematic diagram of a sample image of a silicon rod in a second embodiment of the present invention is shown, a first measurement line 7 is set in the sample image of the silicon rod, the first measurement line 7 is a horizontal line, the first measurement line 7 and the silicon rod outer Zhou Xiangjiao, an intersection point where the horizontal first measurement line 7 intersects with the silicon rod outer periphery is a preset detection point 6, and the preset detection point 6 is the preset detection point.
For another example, referring to fig. 5, a schematic view of a sample image of another silicon rod in a second embodiment of the invention is shown. The first measuring line 7 is a vertical line, and the first measuring line 7 is tangential to the periphery of the silicon rod.
Step 203, calculating the variance of the coordinates of the preset detection point in the preset measurement period, and calculating the variance of the diameter length of the silicon rod in the preset measurement period.
In this step, the growth state of the silicon rod can be determined by presetting the variance of the coordinates of the detection point in the preset measurement period.
In a first embodiment of this step, calculating the variance of the coordinates of the preset detection point in the preset measurement period includes: calculating the variance of the abscissa of a preset detection point in a sample image of a multi-frame silicon rod in a measurement period, wherein the preset detection point is the condition that a first measurement line is a horizontal line; presetting the variance of the ordinate of a detection point, wherein the preset detection point is the condition that a first measurement line is a vertical line; and calculating the variance of the abscissa and the variance of the ordinate again, wherein the variance is a deviation degree value of the position data in a preset measurement period. The present embodiment is applicable to a device having at least one horizontal first measuring line and at least one vertical first measuring line.
In a second embodiment of this step, calculating the variance of the coordinates of the preset detection point in the preset measurement period specifically includes: and calculating the variance of the abscissa of the preset detection point in the sample image of the multi-frame silicon rod in the measurement period, wherein the variance of the abscissa is the deviation degree value of the position data in the preset measurement period. At this time, the method is applicable to the case that the preset detection point is the intersection point of the first measuring line and the periphery of the silicon rod, and the first measuring line is the horizontal line.
In a third embodiment of this step, calculating the variance of the coordinates of the preset detection point in the preset measurement period specifically includes: and calculating the variance of the ordinate of the preset detection point in the sample image of the multi-frame silicon rod in the measurement period, wherein the variance of the ordinate is the deviation degree value of the position data in the preset measurement period. At this time, the method is applicable to the case that the preset detection point is the intersection point of the first measuring line and the periphery of the silicon rod, and the first measuring line is the vertical line.
The deviation degree value of the position data in the preset measurement period of the three embodiments of the step can be used for determining the growth state of the silicon rod.
In the embodiment of the invention, in the variance of the diameter length of the silicon rod in the preset measurement period, the connecting line between the left and right outermost points of the aperture outline in the sample image is calculated to be the diameter.
In one embodiment, in order to simplify the method for detecting abnormal silicon rod in the single crystal furnace, referring to fig. 5, two first measuring lines 7 intersect with the outer-most points of the outline of the diaphragm 10, the two intersection points are two end points of the diameter of the silicon rod, the two intersection points are preset detection points, and the difference value of the abscissa of the two intersection points is the diameter length of the silicon rod.
It can be understood that the calculation of the diameter of the silicon rod can be realized by other schemes in the prior art, and the application is not repeated.
In one implementation of this embodiment, the predetermined measurement period includes the time taken for the silicon rod to rotate at least one revolution. When the silicon rod rotates at least one circle, a sample image of a plurality of frames of silicon rods is obtained, and position data of a preset detection point on the sample image of the silicon rod is obtained according to the sample image of the plurality of frames of silicon rods.
And 204, determining the growth state of the silicon rod according to the deviation degree value.
In this step, the growth state of the silicon rod in the preset measurement period can be determined by presetting the deviation degree value of the position data in the measurement period.
Further, the step of determining the growth state of the silicon rod according to the deviation degree value comprises the following steps:
And under the condition that the deviation degree value of the position data is smaller than a first variance threshold and the variance of the diameter length of the silicon rod is smaller than a second variance threshold, determining that the growth state of the silicon rod is normal.
And under the condition that the deviation degree value of the position data is smaller than a first variance threshold value and the variance of the diameter length of the silicon rod is larger than or equal to a second variance threshold value, determining that the growth state of the silicon rod is normal, but the surface of the silicon rod is rough.
And determining that the growth state of the silicon rod is abnormal under the condition that the deviation degree value of the position data is larger than or equal to a first variance threshold value and the variance of the diameter length of the silicon rod is smaller than a second variance threshold value, wherein the silicon rod is arc-striking.
The deviation degree value of the position data is larger than or equal to a first variance threshold, and in the case that the variance of the diameter length of the silicon rod is larger than or equal to a second variance threshold, the growth state abnormality of the silicon rod is determined, and the silicon rod abnormality is silicon rod torsion or deformation.
In the embodiment of the present invention, in order to make the method for detecting the abnormality of the silicon rod in the single crystal furnace simple, the step of determining the growth state of the silicon rod according to the deviation degree value may include:
And determining that the growth state of the silicon rod is normal under the condition that the variance of the abscissa of at least one end point of the diameter of the silicon rod is smaller than a first variance threshold and the variance of the diameter length of the silicon rod is smaller than a second variance threshold.
In the case where the variance of the abscissa of at least one end point of the diameter of the silicon rod is smaller than the first variance threshold and the variance of the diameter length of the silicon rod is greater than or equal to the second variance threshold, it is determined that the growth state of the silicon rod is normal, but the surface of the silicon rod is rough.
And determining that the growth state of the silicon rod is abnormal under the condition that the variance of the abscissa of at least one end point of the diameter of the silicon rod is larger than or equal to a first variance threshold and the variance of the diameter length of the silicon rod is smaller than a second variance threshold, wherein the silicon rod abnormality is a silicon rod arc.
And determining that the growth state of the silicon rod is abnormal under the condition that the variance of the abscissa of at least one end point of the diameter of the silicon rod is larger than or equal to a first variance threshold and the variance of the diameter length of the silicon rod is larger than or equal to a second variance threshold, wherein the silicon rod is distorted or deformed.
In the embodiment of the invention, the deviation degree value of the position data can judge the growth state of the silicon rod, and when the deviation degree value of the position data is smaller than the first variance threshold value, the growth state of the silicon rod is normal; when the deviation degree value of the position data is larger than or equal to the first variance threshold value, the growth state of the silicon rod is abnormal. The surface roughness of the silicon rod and the type of abnormality of the silicon rod, for example, the abnormality of the silicon rod being a silicon rod arc or the abnormality of the silicon rod being a silicon rod twist or deformation, can be determined in combination with a deviation degree value of the diameter length of the silicon rod within a preset measurement period.
In the embodiment of the invention, the first variance threshold and the second variance threshold are both set according to actual use requirements, for example, the first variance threshold and the second variance threshold are both set to 100 according to experience.
In the embodiment of the invention, in the equal-diameter growth process of the silicon rod, a sample image of the silicon rod is obtained in real time, the coordinates of a preset detection point in the sample image are obtained, the variance of the coordinates of the preset detection point in a preset measurement period is calculated, the variance of the diameter length of the silicon rod in the preset measurement period is calculated, the growth state of the silicon rod can be determined through the variance of the coordinates of the preset detection point and the variance of the diameter length of the silicon rod, and the arc drawing, the distortion or the deformation of the silicon rod can be distinguished; the silicon rod abnormality detection method of the single crystal furnace can detect the state of the silicon rod in real time, identify the abnormality of the silicon rod, improve the detection precision and detection efficiency of the abnormality of the silicon rod, avoid the increase of abnormal working hours after the abnormality of the silicon rod, and improve the productivity of the silicon rod.
Example III
Referring to fig. 6, a step flow chart of a method for detecting abnormality of a silicon rod in a single crystal furnace according to a third embodiment of the present invention is shown, where in the embodiment of the present invention, obtaining a sample image in the single crystal furnace includes: in the process of the equal-diameter growth of the silicon rod and/or the process of the ending of the silicon rod, a sample image of a heat shield reflection is obtained, and at the moment, the method for detecting the abnormality of the silicon rod of the single crystal furnace can comprise the following steps:
And step 301, acquiring a sample image of heat shield reflection in the process of the equal diameter growth of the silicon rod and/or the process of ending the silicon rod.
In the step, in the equal-diameter growth process and the ending process of the silicon rod, the silicon rod rotates according to a certain period, and the equal-diameter growth process and the ending process of the silicon rod can be subjected to image sampling at a certain sampling period, so that a sample image of a heat screen reflection in the single crystal furnace is obtained. For example, one frame of sample image is acquired every 0.2 seconds.
Referring to fig. 7, a schematic structural diagram of a silicon rod manufacturing apparatus according to a third embodiment of the present invention is shown, in which, when a single crystal silicon rod is manufactured by a czochralski method, a single crystal furnace 2 is used, a heat shield 5 is suspended on the edge of a guide cylinder of the single crystal furnace 2, the heat shield 5 generates a reflection 8 shown in fig. 8 on the liquid surface of molten silicon 4, and an external image pickup device is used to collect the reflection 8 on the liquid surface of molten silicon 4. In the sample image of the heat shield reflection, the position of the reflection 8 can show the fluctuation condition of the liquid level of the molten silicon 4, and the fluctuation condition of the liquid level of the molten silicon 4 can influence the state of the silicon rod 1 in the process of the equal diameter growth of the silicon rod and the process of the ending of the silicon rod.
At step 302, coordinates of at least one intersection point of the reflection edge and the second measurement line in the sample image are obtained.
In this step, a two-dimensional coordinate system is set on the acquired sample image, in which coordinates of at least one intersection point of the reflection edge in the sample image and the second measurement line are acquired.
Further, the method for acquiring the preset detection point comprises the following steps: setting a second measuring line in the sample image of the heat shield reflection, wherein the second measuring line intersects with the reflection edge and is a horizontal line; at least one intersection point of the second measuring line and the reflection edge is the preset detection point.
As shown in fig. 7 and 8, the heat shield 5 generates a reflection 8 on the liquid surface of the molten silicon 4, and the position of the reflection 8 can show the fluctuation of the liquid surface of the molten silicon 4, which affects the state of the silicon rod 1 during the equal diameter growth process and the ending process of the silicon rod, so that in practical application, the position of the reflection 8 is generally measured. When measuring the position of the reflection 8, a second measuring line 9 is set, the second measuring line 9 penetrates through the heat shield reflection 8, the second measuring line 9 is parallel to the horizontal axis, the second measuring line 9 has intersection points with the left edge and the right edge of the reflection 8, and the preset detection point comprises at least one intersection point of the reflection edge and the second measuring line 9.
Step 303, calculating the variance of the coordinates of at least one intersection point of the reflection edge and the second measurement line in the sample image in the preset measurement period.
In this step, the growth state of the silicon rod can be determined by presetting the variance of the coordinates of at least one intersection point of the reflection edge and the second measurement line in the sample image in the measurement period.
Since the second measuring line is a horizontal line, the ordinate of the intersection point does not change, and only the deviation degree value of the abscissa of the intersection point is calculated at this time. It comprises the following steps: and calculating the variance of the abscissa of at least one intersection point of the inverted image edge and the second measuring line in the multi-frame sample image in the measuring period, wherein the variance of the abscissa is a deviation degree value of the position data in the preset measuring period.
The deviation degree value of the position data in the preset measurement period can be used for determining the growth state of the silicon rod.
And step 304, determining the growth state of the silicon rod according to the deviation degree value.
In this step, the growth state of the silicon rod in the preset measurement period can be determined by the deviation degree value of the position data in the preset measurement period in step 303.
Further, the step of determining the growth state of the silicon rod according to the deviation degree value comprises the following steps:
And under the condition that the variance of the coordinates of at least one intersection point of the inverted image edge and the second measuring line is smaller than a third variance threshold, determining that the growth state of the silicon rod is normal.
And determining that the growth state of the silicon rod is abnormal under the condition that the variance of the coordinates of at least one intersection point of the inverted image edge and the second measuring line is larger than or equal to a third variance threshold value.
Further, when the variance of the coordinates of at least one intersection point of the inverted image edge and the second measurement line is greater than or equal to a third variance threshold, determining that the abnormal growth state of the silicon rod is a ending and breaking abnormality.
In this embodiment of the present invention, the third variance threshold is set according to actual use requirements, for example, the third variance threshold is set to 100 empirically.
In the embodiment of the invention, in the equal-diameter growth process and/or the ending process of the silicon rod, the growth state of the silicon rod can be determined by acquiring a sample image of the heat shield reflection and acquiring the coordinate of at least one intersection point of the reflection edge and the second measuring line in the sample image, calculating the variance of the coordinate of at least one intersection point of the reflection edge and the second measuring line in the sample image in a preset measuring period and determining the growth state of the silicon rod by the variance of the coordinate of at least one intersection point of the reflection edge and the second measuring line; the silicon rod abnormality detection method of the single crystal furnace can detect the state of the silicon rod in real time, identify the abnormality of the silicon rod, improve the detection precision and detection efficiency of the abnormality of the silicon rod, avoid the increase of abnormal working hours after the abnormality of the silicon rod, and improve the productivity of the silicon rod.
It should be noted that, for simplicity of description, the method embodiments are shown as a series of acts, but it should be understood by those skilled in the art that the embodiments are not limited by the order of acts, as some steps may occur in other orders or concurrently in accordance with the embodiments. Further, those skilled in the art will appreciate that the embodiments described in the specification are presently preferred, and that the acts are not necessarily all required in accordance with the embodiments of the application.
Example IV
Referring to fig. 9, a structural block diagram of a single crystal furnace silicon rod abnormality detection apparatus according to a fourth embodiment of the present invention is shown, where the single crystal furnace silicon rod abnormality detection apparatus may specifically include a sample image acquisition module 401, a position data acquisition module 402, a deviation degree value generation module 403, and a growth state determination module 404, where:
The sample image acquisition module 401 is used for acquiring a sample image in the single crystal furnace.
The position data obtaining module 402 is configured to obtain position data of a preset detection point on the sample image.
The deviation value generating module 403 is configured to calculate a deviation value of the position data in a preset measurement period.
The growth state determination module 404 is configured to determine a growth state of the silicon rod according to the deviation degree value.
According to the silicon rod abnormality detection device of the single crystal furnace, through acquiring a sample image in the single crystal furnace in real time and acquiring position data of a preset detection point on the sample image, a deviation degree value of the position data in a preset measurement period is calculated, and the growth state of the silicon rod can be determined through the deviation degree value.
Furthermore, the silicon rod abnormality detection device of the single crystal furnace further comprises a man-machine interaction module, wherein the man-machine interaction module is used for displaying the deviation degree value of the position data in the preset measurement period, and a technician or workshop operator can more intuitively perceive the deviation degree value through the man-machine interaction module, so that the current growth state of the silicon rod is determined, and even if a decision of related processing is adopted. The man-machine interaction module can be a display screen, an operation screen and the like.
Further, the silicon rod abnormality detection device of the single crystal furnace further comprises an abnormality processing module, wherein the abnormality processing module is used for receiving the growth state of the silicon rod, and adopting a corresponding processing mode after the growth state of the silicon rod is abnormal, for example, when the silicon rod is abnormal in the ending process of the silicon rod, the ending process is finished in advance. The arrangement of the abnormality processing module reduces human interference and improves the accuracy and the instantaneity of judgment.
Referring to fig. 10, a schematic logic structure diagram of a single crystal furnace silicon rod abnormality detection apparatus according to an embodiment of the present invention is shown. The single crystal furnace shoulder-placing broken line detection device may include an interface 501, a bus 504, a memory 503, and a processor 502, where the interface 501, the memory 503, and the processor 502 are connected through the bus 504, the memory 503 is used for storing an executable program, and the processor 502 is configured to run the executable program to implement steps of the single crystal furnace silicon rod abnormality detection method in the first embodiment, the second embodiment, or the third embodiment, and achieve the same or similar effects, so that repetition is avoided and no further description is given here.
The present invention also provides a computer readable storage medium, where one or more executable programs are stored, where the one or more executable programs may be executed by one or more processors, so as to implement steps of the method for detecting silicon rod abnormalities in a single crystal furnace as in the first embodiment, the second embodiment, or the third embodiment, and achieve the same or similar effects, and in order to avoid repetition, a description thereof is omitted herein.
It should be noted that, for simplicity of description, the method embodiments are shown as a series of acts, but it should be understood by those skilled in the art that the embodiments are not limited by the order of acts, as some steps may occur in other orders or concurrently in accordance with the embodiments. Further, those skilled in the art will appreciate that the embodiments described in the specification are presently preferred, and that the acts are not necessarily all required in accordance with the embodiments of the application.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
From the above description of the embodiments, it will be clear to those skilled in the art that the above-described embodiment method may be implemented by means of software plus a necessary general hardware platform, but of course may also be implemented by means of hardware, but in many cases the former is a preferred embodiment. Based on such understanding, the technical solution of the present invention may be embodied essentially or in a part contributing to the prior art in the form of a software product stored in a storage medium (e.g. ROM/RAM, magnetic disk, optical disk) comprising several instructions for causing a terminal (which may be a mobile phone, a computer, a server, an air conditioner, or a network device, etc.) to perform the method of the embodiments of the present invention.
The embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many forms may be made by those having ordinary skill in the art without departing from the spirit of the present invention and the scope of the claims, which are to be protected by the present invention.
Claims (16)
1. The method for detecting the abnormality of the silicon rod of the single crystal furnace is characterized by comprising the following steps:
acquiring a sample image in a single crystal furnace;
Acquiring position data of a preset detection point on the sample image;
calculating the deviation degree value of the position data in a preset measurement period;
And determining the growth state of the silicon rod according to the deviation degree value.
2. The method of claim 1, wherein the acquiring a sample image within a single crystal furnace comprises:
in the equal-diameter growth process of the silicon rod, a sample image of the silicon rod is obtained; ; or alternatively, the first and second heat exchangers may be,
And acquiring a sample image of the heat shield reflection in the equal-diameter growth process and/or the ending process of the silicon rod.
3. The method according to claim 2, wherein in the step of acquiring position data of a preset detection point on the sample image in the case where the sample image is the sample image of the silicon rod, the method of acquiring the preset detection point includes:
Setting a first measuring line in a sample image of the silicon rod, wherein the first measuring line intersects with the periphery of the silicon rod, and the first measuring line is a horizontal line and/or a vertical line;
at least one intersection point of the first measuring line and the periphery of the silicon rod is the preset detection point.
4. A method according to claim 3, wherein the step of acquiring position data of a preset detection point on the sample image comprises:
and acquiring coordinates of the preset detection point in the sample image.
5. The method of claim 4, wherein the step of calculating a deviation value of the position data in a preset measurement period includes;
And calculating the variance of the abscissa of the preset detection point and/or the variance of the ordinate of the preset detection point in the multi-frame sample image in the preset measurement period.
6. The method of claim 1, wherein the step of calculating a deviation value of the position data for a predetermined measurement period further comprises,
And calculating the variance of the diameter and the length of the silicon rod in a preset measurement period.
7. The method of claim 6, wherein the step of determining the growth state of the silicon rod based on the deviation degree value comprises:
determining that the growth state of the silicon rod is normal under the condition that the deviation degree value of the position data is smaller than a first variance threshold and the variance of the diameter length of the silicon rod is smaller than a second variance threshold; ;
determining that the growth state of the silicon rod is normal, but the surface of the silicon rod is rough under the condition that the deviation degree value of the position data is smaller than a first variance threshold value and the variance of the diameter length of the silicon rod is larger than or equal to a second variance threshold value;
determining that the growth state of the silicon rod is abnormal under the condition that the deviation degree value of the position data is larger than or equal to a first variance threshold value and the variance of the diameter length of the silicon rod is smaller than a second variance threshold value, wherein the silicon rod is arc-striking;
and determining that the growth state of the silicon rod is abnormal under the condition that the variance of the diameter and the length of the silicon rod is greater than or equal to a first variance threshold value, wherein the silicon rod is distorted or deformed.
8. The method according to claim 2, wherein in the step of acquiring position data of a preset detection point on the sample image in the case where the sample image is a sample image of the thermal screen reflection, the method of acquiring the preset detection point includes:
Setting a second measuring line in the sample image of the heat shield reflection, wherein the second measuring line intersects with the reflection edge and is a horizontal line;
at least one intersection point of the second measuring line and the reflection edge is the preset detection point.
9. The method according to claim 8, wherein the step of acquiring position data of a preset detection point on the sample image comprises:
and acquiring coordinates of the preset detection point in the sample image.
10. The method of claim 9, wherein the step of calculating a deviation value of the position data for a predetermined measurement period comprises:
And calculating the variance of the abscissa of the preset detection point in the multi-frame sample image in the preset measurement period.
11. The method according to claim 1, wherein the step of determining the growth state of the silicon rod based on the deviation degree value comprises:
Under the condition that the deviation degree value is smaller than a variance threshold value, determining that the growth state of the silicon rod is normal;
And determining that the growth state of the silicon rod is abnormal under the condition that the deviation degree value is larger than or equal to a variance threshold value.
12. The method of claim 11, wherein the abnormal growth state of the silicon rod is a tail-in-tail.
13. The method of claim 1, wherein the preset measurement period comprises: the silicon rod rotates at least one turn for the time.
14. An abnormality detection device for a silicon rod of a single crystal furnace, which is characterized by comprising:
the sample image acquisition module is used for acquiring a sample image in the single crystal furnace;
the position data acquisition module is used for acquiring position data of a preset detection point on the sample image;
The deviation degree value generation module is used for calculating the deviation degree value of the position data in a preset measurement period;
And the growth state determining module is used for determining the growth state of the silicon rod according to the deviation degree value.
15. An abnormality detection apparatus for a silicon rod of a single crystal furnace, the apparatus comprising: the interface, the bus, the memory and the processor are connected through the bus, the memory is used for storing an executable program, and the processor is configured to run the executable program to realize the steps of the single crystal furnace silicon rod abnormality detection method according to any one of claims 1 to 13.
16. A computer-readable storage medium, wherein an executable program is stored on the computer-readable storage medium, the executable program being executed by a processor to implement the steps of the single crystal furnace silicon rod abnormality detection method according to any one of claims 1 to 13.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211266040.1A CN117926389A (en) | 2022-10-17 | 2022-10-17 | Single crystal furnace silicon rod abnormality detection method, device and equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211266040.1A CN117926389A (en) | 2022-10-17 | 2022-10-17 | Single crystal furnace silicon rod abnormality detection method, device and equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117926389A true CN117926389A (en) | 2024-04-26 |
Family
ID=90757933
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211266040.1A Pending CN117926389A (en) | 2022-10-17 | 2022-10-17 | Single crystal furnace silicon rod abnormality detection method, device and equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117926389A (en) |
-
2022
- 2022-10-17 CN CN202211266040.1A patent/CN117926389A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101448065B (en) | Method of correcting image distortion and apparatus for processing image using the method | |
| EP1500904B1 (en) | Method of and device for measuring bead cutting shape of electric welded tube | |
| WO2020108287A1 (en) | Crystal line growing state detection method, apparatus and device for silicon rod | |
| US20180239174A1 (en) | Method and device for checking refractive power distribution and centering | |
| JP2014501220A (en) | Crystal growth characteristics measurement method using multiple cameras | |
| CN113789568A (en) | Single crystal growth control method, apparatus and storage medium | |
| US7172656B2 (en) | Device and method for measuring position of liquid surface or melt in single-crystal-growing apparatus | |
| CN117926389A (en) | Single crystal furnace silicon rod abnormality detection method, device and equipment | |
| CN102787353A (en) | Method for measuring crystal wire of silicon rod of single crystal furnace in non-contact mode | |
| CN104777167A (en) | Inspecting method for a winding defect of film | |
| CN102359761B (en) | Thickness measuring method for insulating and sheathing materials of cable and optical cable | |
| CN112444516B (en) | Method, device and equipment for detecting crystal wire growth state of silicon rod | |
| CN113567452A (en) | Burr detection method, device, equipment and storage medium | |
| CN114782439B (en) | Method, device and system for detecting growth state of cultivated diamond and electronic equipment | |
| CN116026263B (en) | Thickness measurement calibration method, device, equipment and storage medium | |
| CN107314746A (en) | The online monitoring method system of enamel-covered wire | |
| CN111256612A (en) | Machine vision-based method for measuring straight tooth involute small-modulus gear | |
| JP2002288633A (en) | Image processing device and its positional correction method | |
| JP5854757B2 (en) | Single crystal ingot diameter control method | |
| CN111189428B (en) | Real-time monitoring method for bending deformation of cantilever beam | |
| CN115046503A (en) | Steel grating pressure welding quality on-line detection system based on laser profile sensor | |
| CN117661096A (en) | Shoulder-placing broken line detection method, device and equipment for single crystal furnace | |
| CN112939421A (en) | Automatic detection method for float glass melting | |
| CN114155432A (en) | Meter reading identification method based on robot | |
| CN112797807A (en) | Temperature anomaly monitoring system and method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination |