CN117926224A

CN117926224A - Method for manufacturing gas injection mechanism

Info

Publication number: CN117926224A
Application number: CN202410031059.0A
Authority: CN
Inventors: 邢志刚; 张志明; 刘雷
Original assignee: Chu Yun Precision Technology Shanghai Co ltd
Current assignee: Chu Yun Precision Technology Shanghai Co ltd
Priority date: 2022-09-30
Filing date: 2022-09-30
Publication date: 2024-04-26
Also published as: CN115505903A; CN115505903B

Abstract

The invention provides a manufacturing method of a gas injection mechanism for a gas phase reaction device, wherein the gas injection mechanism comprises a first gas injection mechanism positioned in a middle area and a second gas injection mechanism positioned in a peripheral area. The manufacturing method of the second gas injection mechanism comprises the steps of forming a plurality of cone-shaped channels along the direction that the rotation direction of the gas sprayed from the second gas injection mechanism to form rotary gas flow is consistent with the rotation direction of a bearing disc which is arranged in the gas phase reaction device and opposite to the gas injection mechanism in the reaction process, then forming tubular channels which are communicated with the cone-shaped channels in a one-to-one correspondence manner, and arranging a partition piece to divide the second gas injection mechanism into a plurality of mutually independent subareas so as to facilitate fine adjustment and matching of the gas flow, thereby realizing the purpose of inhibiting or completely eliminating vortex in a reaction chamber and improving the utilization rate of the gas.

Description

Method for manufacturing gas injection mechanism

The present application is a divisional application of the applicant (Chu fine technology (Shanghai) Co., ltd.) having an application date of 2022, 09 and 30, and having the name of "gas injection mechanism, method for producing the same, gas phase reaction apparatus", and application number of "2022112088380".

Technical Field

The invention relates to the technical field of semiconductor devices and devices, in particular to a manufacturing method of a gas injection mechanism.

Background

The reaction chamber is a critical chamber in the manufacture of semiconductor devices, wherein the reaction chamber of a gas phase reaction apparatus is brought by a gas into a reactant and a flow field is established. For example, for a reaction chamber in which material is grown by a vapor phase reaction, the transport of the gas source material and the removal of byproducts after the growth reaction are accomplished by a reaction chamber flow field established by the carrier gas and reactant gas together during the process growth.

The carrier plate for carrying the material growth substrate in the gas flow is usually rotated during the material growth process, and for the reaction chamber where the carrier plate needs to rotate, the gas flow near the outer edge of the carrier plate has a tangential flow velocity drawn by the carrier plate in addition to a flow velocity along the main axis direction of the reaction chamber due to the rotation of the carrier plate. The presence of tangential flow velocity increases the overall velocity of the airflow in the edge flow field, and particularly in the case of high-speed rotation of the carrier disk, the greater tangential flow velocity creates a vortex in the flow field in the direction of the incoming flow in the edge region of the carrier disk. The gas vortex can have a number of negative effects on the use of the chamber: reducing uniformity of growth material on the substrate in the vortex region and the vicinity thereof; reducing the growth environment of the cavity, the stability of the growth process and the like.

For a reaction chamber with reactants carried by gas, the distribution and morphology of the gas flow field is generally adjusted during the actual material growth process by adjusting the following three overall process parameters: total gas amount of reaction chamber process, reaction chamber pressure and bearing disc rotating speed. Through setting and adjusting the three overall process parameters, the gas vortex can be restrained and eliminated in a certain direction and within a certain range; such adjustments, however, in turn, place limits on the range of available process parameters. In addition, in the process of eliminating gas vortex by adjusting the overall process parameters, the usage amount of carrier gas and source material gas is often increased, so that the use efficiency of source materials is reduced, and the material consumption and the growth cost are increased.

Disclosure of Invention

In view of the above-mentioned drawbacks of the prior art gas phase reaction apparatus, the present invention provides a method for manufacturing a gas injection mechanism, so as to solve one or more of the above-mentioned problems.

In order to achieve the above object, the present invention provides a method of manufacturing a gas injection mechanism for a gas phase reaction apparatus, the gas injection mechanism including a first gas injection mechanism located in a central region and a second gas injection mechanism located in a peripheral region and surrounding the first gas injection mechanism, wherein the gas phase reaction apparatus includes at least one partition dividing the second gas injection mechanism into a plurality of sub-regions independent from each other, the partition being distributed in a circumferential form along a circumferential direction of the second gas injection mechanism or the partition being formed in the second gas injection mechanism extending in a center-to-edge direction of the gas injection mechanism, the method of manufacturing the second gas injection mechanism comprising the steps of:

s1: providing a body having a thickness, the body comprising oppositely disposed first and second sides, the first side configured as an outlet side defining a major axis perpendicular to a plane of the body and passing through a geometric center of an outlet face of the gas injection mechanism;

S2: cutting the main body from the first side along a first direction by using a conical drill bit with a conical top angle along a direction that the rotation direction of gas sprayed out of the second gas injection mechanism to form a rotary gas flow is consistent with the rotation direction of a bearing disc which is positioned in the gas phase reaction device and opposite to the gas injection mechanism in the reaction process, so as to obtain a plurality of conical channels, wherein the conical bottom of each conical channel is positioned on the first side, and the conical top of each conical channel is positioned in the main body between the first side and the second side;

S3: cutting from each cone apex to the second side in a second direction or cutting from the second side to each cone apex using a cylindrical drill bit having a diameter, obtaining a plurality of tubular passages in one-to-one correspondence with the cone-shaped passages to form a plurality of second gas delivery passages penetrating the body in a thickness direction;

wherein a tangential plane to the main axis, which is defined through the bottom centroid O-point of the cone-shaped channel, is a tangential plane to the bottom centroid O-point of the cone-shaped channel, the first direction being such that in at least part of the second gas delivery channel, the projection of the cone axis of the cone-shaped channel onto the tangential plane to the bottom centroid O-point thereof has an angle with the main axis The second direction causes the projection of the tube axis of the tubular channel on the tangential plane of the centroid O point of the bottom surface of the cone-shaped channel to have an angle/>The angle/>Sum angle/>At least one of which is other than 0, so that at least part of the second gas delivery channels is formed as a rotating gas flow channel.

Optionally, in at least part of the second gas delivery channel, the first direction further makes an angle θ1 between a perpendicular plane in which the conical axis of the rotary gas flow channel is located and a tangential plane in which a bottom surface centroid of the cone-shaped channel is located, the second direction further makes an angle θ2 between a perpendicular plane in which the pipe axis is located and a tangential plane in which a bottom surface centroid of the cone-shaped channel is located, and at least one of the angle θ1 and the angle θ2 is not 0, wherein: the straight line passing through the bottom surface centroid O point of the cone-shaped channel and being parallel to the main axis is the axial line of the O point, the straight line passing through the end point O2 point of the tube shaft at the joint of the tubular channel and the cone-shaped channel and being parallel to the main axis is the axial line of the O2 point, the vertical plane where the cone shaft is located is a plane formed by the axial lines of the cone shaft and the O point, and the vertical plane where the tube shaft is located is a plane formed by the axial lines of the tube shaft and the O2 point.

Optionally, defining a main axis, the main axis passing through the geometric center of the gas injection mechanism perpendicular to the plane of the first side of the main body, the method for manufacturing the gas injection mechanism further includes:

The main body is cut to form a vertical gas flow channel parallel to the main axis, so that the second gas injection mechanism comprises the vertical gas flow channel.

Optionally, the first gas injection mechanism and the second gas injection mechanism are processed on the same plate, or the first gas injection mechanism and the second gas injection mechanism are processed on different plates respectively.

Optionally, the gas phase reaction device is provided with a reaction chamber, the reaction chamber is provided with a top plate, and the top plate is provided with a plurality of the spacers.

Alternatively, the spacer is a rib of the top plate protruding toward the second side direction of the second gas injection mechanism.

Alternatively, the gas phase reaction apparatus has a reaction chamber, and the partition is formed as a rib protruding from the second side of the second gas injection mechanism toward the top plate.

Optionally, when the spacers are circumferentially distributed along the circumference of the second gas injection means, the spacers divide the second gas injection means into at least two concentric annular sub-areas.

Optionally, when the separator extends in the direction from the center to the edge of the gas injection mechanism to be formed in the second gas injection mechanism, the separator divides the second gas injection mechanism into at least two sub-areas of a sector ring shape.

Optionally, areas of at least two of the sub-areas of the sector-ring shape are the same.

As described above, the manufacturing method of the gas injection mechanism of the present invention has the following advantageous effects:

The gas injection mechanism is used for a gas phase reaction device and comprises a first gas injection mechanism positioned in a middle area and a second gas injection mechanism positioned in a peripheral area and surrounding the first gas injection mechanism, wherein the second gas injection mechanism comprises a plurality of second gas conveying channels, at least part of the second gas conveying channels comprise tubular channels and cone-shaped channels through the manufacturing method, the cone tops of the cone-shaped channels are connected with the tubular channels, the cone bottoms of the cone-shaped channels are air outlet surfaces, and the air outlet surfaces are non-circular air outlet surfaces. The cone axis of the cone-shaped channel has an angle between the projection of the cone axis on the tangential plane of the centroid O point of the bottom surface and the main axis The tubular shaft of the tubular channel communicating with the cone-like channel has an angle/>, between the projection of the tubular shaft of the tubular channel on the tangential plane of the centroid O-point of the bottom surface of the cone-like channel and the main axisAnd angle/>Sum angle/>The above special arrangement of the second gas conveying channel is not 0, so that the second gas in the peripheral area is ejected along the second gas conveying channel to form a rotating gas flow, the direction of the rotating gas flow is consistent with the rotating direction of the bearing disc in the reaction device in the reaction process, the rotating gas flow has tangential speed and momentum, so that the relative speed of the middle flow field gas flow and the edge flow field gas flow in the reaction chamber is reduced, the flow impact mixing and streamline steering process of the flow field in the edge area of the reaction chamber is smoother, the generation of vortex in the reaction chamber is restrained or completely eliminated, and the laminar flow characteristic of the flow field of the reaction chamber is more stable. And simultaneously, the usable range of the whole process parameters such as the total process gas quantity of the reaction chamber, the pressure of the reaction chamber, the rotating speed of the bearing disc and the like is enlarged. The expansion of the usable range of the process parameters can further help to improve the utilization rate of carrier gas and source material gas, so that the cost of material growth can be effectively reduced. Meanwhile, particle defects in the growth materials on the bearing disc in the reaction cavity can be reduced, and the yield of products is improved. The above effect is particularly evident for the case of high rotation speeds (speeds above 200 RPM) of the carrier disc. The gas phase reaction device comprises at least one isolation piece, the isolation piece divides the second gas injection mechanism into a plurality of mutually independent subareas, the isolation piece is distributed in a circumferential mode along the circumference of the second gas injection mechanism, or the isolation piece extends in the second gas injection mechanism along the direction from the center of the gas injection mechanism to the edge, so that the gas flow is favorably finely regulated and matched, the vortex in the reaction chamber is restrained or completely eliminated, and the gas utilization rate is improved.

The gas phase reaction device with the gas injection mechanism can reduce and inhibit the generation of airflow vortex and obtain a uniform and stable gas flow field, thereby expanding the settable range of process parameters, helping to improve the utilization rate of carrier gas and source material gas and effectively reducing the cost of material growth.

Drawings

Fig. 1 is a schematic front view of a gas-phase reaction chamber of a gas-phase reaction apparatus with a gas injection mechanism according to an embodiment of the invention.

Fig. 2 is a schematic bottom view of the gas injection mechanism of fig. 1.

FIG. 3 is a schematic bottom view of an alternative embodiment of a gas injection mechanism.

Fig. 4 is a schematic bottom view of a second gas injection mechanism of the gas injection mechanism of fig. 2.

Fig. 5 is a schematic perspective view showing a second gas injection mechanism of the gas injection mechanism shown in fig. 2 from a top view.

Fig. 6 shows a side cross-sectional view along line H-H in fig. 4.

Fig. 7 is a schematic sectional view of the second gas injection mechanism shown in fig. 5 in a radial direction A-A, and shows a perspective structure of the second gas injection mechanism in a top view.

Fig. 8 is a schematic bottom view of a second gas injection mechanism of the gas injection mechanism according to the second embodiment of the present invention, in which a tubular passage in the second gas injection mechanism is shown in a partial perspective manner.

Fig. 9 is a partially enlarged view of the P portion of fig. 8.

Fig. 10 is a schematic view of the second gas injection mechanism shown in fig. 8 in a radial cross-sectional view and illustrates a perspective structure of the second gas injection mechanism in a top view.

Fig. 11 is a schematic perspective view showing a top view of a second gas injection mechanism of the gas injection mechanism according to the third embodiment of the present invention.

Description of element reference numerals

100. Third sub-region of gas injection mechanism 1023

101. First side of first gas injection mechanism 1024

1010. Second side of the first gas delivery channel 1025

1010-1 First slit 103 spacer

1010-2 Second slit 110 first circumference

102 (102 ') (102') A second circumference of the second gas injection mechanism 120

1020 (1020 ') (1020') A third circumference of the second gas delivery channel 130

1026. Rotating gas flow channel 200 reaction chamber

1026-1 (1026' -1) Cone-shaped channel 201 carrying tray

1026-2 (1026' -2) Tubular passage 300 gas supply end

1021. First sub-zone 301 air supply line

1022. A second sub-region

Detailed Description

Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.

Example 1

The present embodiment provides a gas injection mechanism 100, where the gas injection mechanism 100 is used in the gas phase reaction apparatus shown in fig. 1, the gas injection mechanism 100 is disposed in a reaction chamber 200 of the gas phase reaction apparatus, and is used for delivering a reaction gas into the reaction chamber 200, a carrier plate 201 is disposed in the reaction chamber 200, and the gas injection mechanism 100 is disposed opposite to the carrier plate 201. The vapor phase reaction apparatus may be, for example, a vapor phase deposition apparatus, specifically, a chemical vapor deposition apparatus, a physical vapor deposition apparatus, a plasma enhanced vapor deposition apparatus, a Metal Organic Chemical Vapor Deposition (MOCVD) apparatus, or the like. The present embodiment will be described with reference to a gas injection mechanism of an MOCVD apparatus. It should be understood that this device is merely exemplary and that the present invention is not limited to this device.

As shown in fig. 1, the gas phase reaction apparatus of the present embodiment has a reaction chamber 200, and the cross section of the reaction chamber 200 of the gas phase reaction apparatus is generally circular or similar to a circular structure, or may be a rectangular structure or other structures known to those skilled in the art, which will not be described herein. The reaction chamber 200 may be a vertical flow chamber in which gas is introduced in a vertical direction, or may be a horizontal flow chamber in which gas is introduced in a center. The reaction chamber 200 may be a positive chamber in which the gas injection mechanism 100 is disposed opposite to the susceptor 201 and the gas injection mechanism 100 is disposed at the upper portion and the susceptor 201 is disposed at the lower portion, or an inverted chamber in which the gas injection mechanism 100 is disposed opposite to the susceptor 201 and the susceptor 201 is disposed at the upper portion and the gas injection mechanism 100 is disposed at the lower portion. For convenience of description, the embodiment uses a vertical flow chamber with a circular cross section of the reaction chamber 200 shown in fig. 1, and the gas injection mechanism 100 is located at the upper part and the carrier plate 201 is located at the lower part, for illustrating the gas injection mechanism 100.

Referring to fig. 1 and 2, a carrier plate 201 for carrying a substrate to be processed is provided in a reaction chamber 200, the carrier plate 201 being rotated about a rotation axis a during a gas phase reaction. The gas injection mechanism 100 is disposed opposite to the carrier plate 201, for example, the gas injection mechanism 100 is disposed at the top of the reaction chamber 200, and injects gas into the reaction chamber 200, and the carrier plate 201 is disposed below the gas injection mechanism 100. The gas injection mechanism 100 provided in this embodiment has a disk-like structure as a whole, and includes a first gas injection mechanism 101 that delivers a first gas and a second gas injection mechanism 102 that delivers a second gas. Wherein the first gas injection mechanism 101 is located in a middle region of the gas injection mechanism 100 and the second gas injection mechanism 102 is located in a peripheral region of the gas injection mechanism 100 and is disposed around the first gas injection mechanism 101. The gas phase reaction apparatus further comprises a gas supply end 300 and a gas supply pipeline 301, wherein the gas supply end 300 is connected with the first gas injection mechanism 101 and the second gas injection mechanism 102 through the gas supply pipeline 301, and is used for supplying the first gas to the first gas injection mechanism 101 and supplying the second gas to the second gas injection mechanism 102. Preferably, the average molecular weight of the second gas is equal to or greater than the average molecular weight of the first gas during the gas phase reaction.

Referring also to FIG. 1, the second gas injection mechanism 102 has oppositely disposed first and second sides 1024, 1025, the first side 1024 being the gas outlet face facing the carrier platter 201. Similarly, the first gas injection mechanism 101 also has a gas outlet surface facing the carrier platter 201. A main axis B is defined, which is perpendicular to the plane of the first side 1024 (which may be equivalently the outlet plane of the disc-shaped gas injection mechanism 100) and passes through the geometric center of the gas injection mechanism 100, and may or may not be parallel to the rotation axis a of the carrier disc 201, preferably the main axis B is parallel to the rotation axis a of the carrier disc 201, preferably the main axis B coincides with the rotation axis a.

As shown in fig. 2, a schematic bottom cross-sectional view of the gas injection mechanism 100 is shown. It should be understood that in the present invention, the term "bottom" refers to a view direction along the first side 1024 toward the second side 1025, and the term "top" refers to a view direction along the second side 1025 toward the first side 1024.

As shown in fig. 2, the first gas injection mechanism 101 includes a plurality of first gas delivery passages 1010, and the first gas delivery passages 1010 are distributed in the first gas injection mechanism 101. In this embodiment, the first gas delivery channel 1010 is provided as a slit-like channel that extends in the same direction. During the gas phase reaction, the first gas is a reaction source gas and a carrier gas, and is used for generating a target product through the reaction. Illustratively, for group III-V MOCVD, the first gas is a group III metal organic source gas, a group V hydride source gas, and a carrier gas. The first gas delivery path 1010 includes a first slit 1010-1 for delivering a group III metal organic source gas and a carrier gas to a gas phase reaction zone and a second slit 1010-2 for delivering a group V hydride source gas and a carrier gas to a gas phase reaction zone to provide a group III metal organic source gas and a group V hydride source gas for reacting on a substrate to be processed to form a group III-V compound.

Preferably, the first slits 1010-1 and the second slits 1010-2 are alternately arranged in the first gas injection mechanism 101. Preferably, a third slit (not shown) is further included between the first slits 1010-1 and the second slits 1010-2 alternately arranged, and a carrier gas (or purge gas) which does not contain a reaction gas and does not react with the reaction gas flows out of the third slit.

In another alternative embodiment of the present embodiment, as shown in fig. 3, the first gas delivery channel 1010 is a hole-type structure, such as a circular hole, an oval hole, a diamond hole, or the like. The holes may be arranged in concentric circular ring areas, or in strip-shaped interval distribution areas, or in groups of staggered holes, or in sector areas, etc., and those skilled in the art can adjust the shapes, the positional relationships, etc. of the hole distribution according to the actual process requirements, and the present invention is not limited thereto.

In another alternative embodiment of the present embodiment, the first gas delivery channel may also be a combination of slit-like channels and hole-type structures, where the distribution, shape and positional relationship of the slit-like channels and hole-type structures may also be adjusted according to the actual process requirements.

In this embodiment, the direction of the air flow formed by the first air ejected from the first air delivery channel 1010 is parallel to the main axis B, that is, the first air delivery channel 1010 is a vertical air flow channel, and the direction of the air flow formed is vertical to the carrying tray 201.

Referring also to fig. 2 and 3, in the present embodiment, the second gas injection mechanism 102 includes a plurality of second gas delivery channels 1020 for delivering a second gas, which may be one or more of a purge gas, a carrier gas, and a reaction source gas, preferably the second gases do not react with each other or react with each other but do not generate a target product. If the second gas injection mechanism 102 is fed with all the reaction sources involved in the reaction, unnecessary growth (such as deposition on the walls) is caused, source gas is wasted, the maintenance period of the equipment is reduced, and in addition, part of the reaction sources enter the internal gas phase reaction area, so that the uniformity of the grown materials is affected. In this embodiment, the second gases introduced into the second gas conveying channel 1020 do not react with each other or react with each other but do not generate target products, so that the above problems can be effectively avoided and the uniformity of the growth materials can be improved. For example, for group III-V MOCVD, the second gas may be a group V hydride source gas and a carrier gas, or a purge gas.

As shown in fig. 4 and 5, a number of second gas delivery channels 1020 may be distributed in any manner within the second gas injection mechanism 102. In this embodiment, at least part of the second gas conveying channels 1020 are rotating gas flow channels 1026, that is, the second gas conveying channels 1020 may be all rotating gas flow channels 1026 (the second gas is ejected along the rotating gas flow channels 1026 to form a rotating gas flow), or may be a combination of vertical gas flow channels (the direction of the formed gas flow is vertical to the carrier plate) similar to the first gas conveying channels 1010 and the rotating gas flow channels 1026.

Referring to fig. 6 and 7, a side cross-sectional view of line H-H in fig. 4 and a schematic cross-sectional view of radial direction A-A in fig. 5 are shown, respectively, to illustrate the structure of the rotary air flow channel 1026. As shown in fig. 6 and 7, the rotational air flow channel 1026 includes a tubular channel 1026-2 extending therethrough from the second side 1025 to the first side 1024 and a cone-shaped channel 1026-1 in communication with the tubular channel 1026-2. The cone tip of the cone-shaped channel 1026-1 is in communication with the tubular channel 1026-2, and the cone base of the cone-shaped channel 1026-1 is located on the first side 1024 of the second gas injection mechanism 102, and is a gas outlet surface, and the gas outlet surface is a non-circular gas outlet surface, which may be, for example, elliptical, diamond-shaped, rectangular, triangular, semicircular, polygonal, or the like. Preferably, as shown in FIG. 7, the cone base of the cone-shaped channel 1026-1 is elliptical.

In this embodiment, define: the cone bottom surface centroid of the cone-shaped channel 1026-1 is the point O (cone bottom surface centroid is the geometric center of the cone bottom), the tangential line passing through the bottom surface centroid O of the cone-shaped channel 1026-1 about the principal axis B is the tangential line of the point O, the straight line passing through the bottom surface centroid O of the cone-shaped channel 1026-1 and parallel to the principal axis B is the axial line of the point O, and the tangential plane of the bottom surface centroid O is the tangential plane passing through the bottom surface centroid O about the principal axis B, that is, the plane formed by the tangential line of the point O and the axial line of the point O.

The cone axis of the cone-shaped channel 1026-1 has an angle between its projection onto the tangent plane of the centroid O of its bottom surface and the main axis BI.e., the projection of the cone axis of the cone-shaped channel 1026-1 onto the tangent plane of the bottom surface centroid O thereof may be oblique or parallel with respect to the main axis B; the tubular shaft of the tubular passage 1026-2 communicating with the cone-like passage 1026-1 has an angle/>, between the projection of the tubular shaft of the tubular passage 1026-2 on the tangential plane of the centroid O point of the bottom surface of the cone-like passage 1026-1 and the main axis BI.e. the projection of the tube axis of the tubular passage 1026-2 onto the tangential plane of said bottom centroid O-point may be inclined or parallel with respect to the main axis B. But angle/>Sum angle/>Is not 0, i.e. if the projection of the cone axis of the cone-shaped channel 1026-1 onto the tangential plane of the point of the centroid O of its bottom surface is parallel to the main axis B/>The projection of the tube axis of the tubular passage 1026-2 onto the tangential plane of the bottom centroid O of said conical passage 1026-1 is inclined with respect to the main axis BOr if the projection of the tube axis of the tubular passage 1026-2 onto the tangential plane of the base centroid O of said conical passage 1026-1 is parallel to the main axis B/>The projection of the cone axis of the cone-shaped channel 1026-1 onto the tangent plane of the centroid O of its bottom surface is tilted with respect to the main axis BOr the projection of the tube axis of the tubular passage 1026-2 onto the tangential plane of the bottom centroid O of said conical passage 1026-1 is inclined/>, with respect to the main axis BAt the same time, the projection of the cone axis of the cone-shaped channel 1026-1 on the tangential plane of the centroid O of the bottom surface thereof is also inclined with respect to the main axis BThe above-mentioned angle between the projection of the cone axis of the cone-shaped channel 1026-1 and/or the tube axis of the tubular channel 1026-2 onto the tangential plane of the centroid O of the bottom surface of the cone-shaped channel 1026-1 and the main axis B means that the gas flow velocity of the gas ejected from the rotary gas flow channel 1026 comprises a tangential component and an axial component, thus forming the rotary gas flow channel 1026.

For ease of understanding, this embodiment takes the example that both the cone axis of the cone-shaped channel 1026-1 and the tube axis of the tubular channel 1026-2 are located on the tangential plane of the bottom surface centroid O of the cone-shaped channel 1026-1, and referring to fig. 4 and 6, fig. 6 is a side sectional view along the line H-H in fig. 4, where the cross section of the line H-H is the tangential plane of the bottom surface centroid O of the cone-shaped channel 1026-1 of the rotating airflow channel 1026 marked in fig. 4. The cone top defining the cone-shaped channel 1026-1 is the point O1, the end point of the tube axis of the tubular channel 1026-2 at the junction of the tubular channel 1026-2 and the cone-shaped channel 1026-1 is the point O2, the geometric center of the end of the tubular channel 1026-2 at the second side 1025 of the second gas injection mechanism 102 is the point O3, that is, the connection line between the point O and the point O1 is the cone axis OO1 of the cone-shaped channel 1026-1, the connection line between the point O2 and the point O3 is the tube axis O2O3 of the tubular channel 1026-2, and the straight line passing through the bottom surface centroid O of the cone-shaped channel 1026-1 and parallel to the main axis B is the axial line ON of the point O. In this case, the projection of the cone axis OO1 of the cone-shaped channel 1026-1 on the tangent plane of the centroid O of the bottom surface thereof is the cone axis OO1 of the cone-shaped channel 1026-1 itself, and the projection of the tube axis O2O3 of the tubular channel 1026-2 communicating with the cone-shaped channel 1026-1 on the tangent plane of the centroid O of the bottom surface of the cone-shaped channel 1026-1 is the tube axis O2O3 of the tubular channel 1026-2 itself. At this time, the cone axis OO1 of the cone-shaped channel 1026-1 has an angle between ON (ON is parallel to the main axis B)The tubular shaft O2O3 of the tubular passage 1026-2 has an angle/> between O2N '(O2N' being parallel to the main axis B)And, angle/>Sum angle/>At least one of which is other than 0.

For the case where the cone axis of the cone-shaped channel 1026-1 and the tube axis of the tubular channel 1026-2 are not located on the tangential plane of the bottom surface centroid O of the cone-shaped channel 1026-1, it will be appreciated that the gas flow velocity of the gas ejected from the channel can be made to include both tangential and axial components as long as the projection of the cone axis of the cone-shaped channel 1026-1 and/or the tube axis of the tubular channel 1026-2 on the tangential plane of the bottom surface centroid O of the cone-shaped channel 1026-1 is at an angle (typically, the angle is not 90 ° for practical machining and application) to the axial line of the O-point (parallel to the main axis B). The second gas injection mechanism 102 includes a plurality of the rotating gas flow channels 1026, and the gas injected from the second gas injection mechanism 102 during the reaction is formed into a rotating gas flow.

The second gas provided by the external gas supply 300 flows into the reaction chamber 200 through the rotating gas flow channels 1026, and the plurality of rotating gas flow channels 1026 are arranged on the first side 1024 of the second gas injection means 102 such that when said second gas is ejected from the rotating gas flow channels 1026, a rotating gas flow is formed, the rotating gas flow having both axial velocity and momentum and tangential velocity and momentum.

In this embodiment, the arrangement of the rotating gas flow channels 1026 on the second gas injection mechanism is such that the direction of rotation of the rotating gas flow coincides with the direction of rotation of the carrier plate 201 located opposite to the gas injection mechanism 100 in the gas phase reaction apparatus during the reaction. This is because the airflow at the edge of the carrier platter 201 may have a tangential velocity (especially for carrier platters rotating at high speeds (above 200 RPM)) due to drag of the carrier platter, which collides with and mixes with the incoming flow (typically axial flow), thereby creating a vortex in the direction of the incoming flow at the edge of the carrier platter 201. The rotating direction of the rotating airflow is consistent with the rotating direction of the bearing disc 201 in the reaction process, the edge incoming flow is changed from axial incoming flow to incoming flow with tangential velocity in the same direction, so that the relative velocity of the edge flow field airflow in the reaction chamber 200 is reduced, the flow impact mixing and streamline steering process of the flow field in the reaction chamber 200 in the edge area is more stable, the generation of vortex in the reaction chamber 200 is inhibited or completely eliminated, and the laminar flow characteristic of the flow field in the reaction chamber 200 is more stable. If the direction of the rotating air flow is not identical to the rotating direction of the carrier platter 201, the relative velocity of the air flow and the incoming flow at the edge of the carrier platter 201 becomes large, which increases the eddy current.

The ratio of tangential component to axial component of the velocity of the rotating gas stream should not be too great, which would otherwise have a large impact on the gas flow in the interior region, which would be detrimental to the uniform injection of gas into the reaction chamber 200. Preferably, the method comprises the steps of,Preferably, the method comprises the steps of,

Preferably, the angleAnd angle/>At least one of which is not less than 5 DEG, so that the effect of the generated whirling airflow is more remarkable.

Preferably, in each rotational flow channel 1026, the angleAnd angle/>The tubular axis of the tubular passage 1026-2 and the cone axis of the cone-shaped passage 1026-1 are parallel or collinear with each other, and the speed of the swirling air flow can be more easily controlled.

Optionally, in the second gas injection mechanism 102, at least part of the rotational gas flow channel 1026 has at least one of the following features: (1) The angle aboveThe same; (2) The above angle/>The same; (3) the area of the conical bottom of the conical channel 1026-1 is the same. That is, each of the rotating gas flow channels 1026 may be of the same or different configuration, and the rotating gas flow channels 1026 are designed to minimize turbulence in the gas flow field near the edge of the carrier plate 201, particularly according to different reaction chambers and process requirements.

It should be noted that each rotational air flow channel 1026 is not limited to include only one tubular channel 1026-2 and one cone-shaped channel 1026-1, and that the rotational air flow channel 1026 may include an unlimited number of combinations of tubular channels 1026-2 and cone-shaped channels 1026-1, e.g., two tubular channels 1026-2 connecting one cone-shaped channel 1026-1, or one tubular channel 1026-2 connecting a double cone-shaped channel 1026-1. Taking a tubular channel 1026-2 connected with a double-cone channel 1026-1 as an example, the double-cone channels 1026-1 are stacked, the tubular channel 1026-2 is connected with the cone top of the first cone channel, the first cone channel is connected with the second cone channel, the cone bottom of the second cone channel is located at the air outlet side, and the bottom centroid point O is the bottom centroid of the second cone channel. The projection of the conical shaft of the first conical channel on the tangential plane of the centroid O point of the bottom surface and the main axis B have an angleThe projection of the conical shaft of the second conical channel on the tangential plane of the centroid O point of the bottom surface and the main axis B have an angle/>The tubular axis of the tubular passage has an angle/>, between the projection of the tubular axis of the tubular passage on the tangential plane of the centroid O of the bottom surface and the main axis BProvided that/>And/>At least one of which is other than 0, may form a rotary air flow channel.

In an alternative embodiment, the second gas injection mechanism 102 is located outside the carrier plate 201, and in another alternative embodiment, the second gas injection mechanism 102 may cover the edge of the carrier plate 201 and the coverage area may not exceed 36% of the area of the carrier plate 201 (i.e., the radius of the uncovered area along the radial direction of the carrier plate is 80% or more of the radius of the carrier plate) due to the adoption of the rotating gas flow channel 1026 that can generate the rotating gas flow. Compared with the prior art, on the premise of ensuring the growth uniformity of the effective growth area on the bearing plate, the area of the second gas injection mechanism 102 covering the bearing plate is increased, so that the waste of the reaction source gas can be reduced, and the use efficiency of the reaction source is improved.

In the present embodiment, the second gas delivery channels 1020 are distributed in the second gas injection mechanism 102. Optionally, at least a portion of the second gas delivery channels 1020 are annularly distributed or fanned annularly distributed in the peripheral region of the gas injection mechanism 100, preferably, the second gas delivery channels 1020 are arranged to form a concentric annular region; preferably, the second gas delivery channels 1020 are arranged to form a plurality of concentric annular regions, each concentric annular region having the same number of second gas delivery channels 1020, or at least two concentric annular regions, the number of second gas delivery channels 1020 being different, the specific number distribution being dependent on the process requirements; preferably, the second gas delivery channels 1020 of each concentric annular region are aligned in a radial direction, preferably, the second gas delivery channels 1020 of each concentric annular region are staggered in a radial direction; preferably, the area of the outermost annular region is not smaller than the area of the innermost annular region; or the area of the concentric annular region gradually increases from the innermost annular region to the outermost annular region; or the areas of the concentric annular regions gradually increase from the innermost annular region to the outermost annular region, and wherein the areas in at least two adjacent annular regions are the same.

Taking the disc-shaped gas injection mechanism 100 shown in fig. 4 and 5 as an example, the second gas delivery channels 1020 are circumferentially distributed in the second gas injection mechanism 102. Alternatively, when the second gas delivery channels 1020 are circumferentially distributed in the second gas injection mechanism 102, they may be circumferentially distributed in the second gas injection mechanism 102 along one or more circumferences.

When the second gas delivery channels 1020 are distributed in the second gas injection mechanism 102 along multiple circumferences, the multiple circumferences may be concentric circumferences or non-concentric circumferences. Preferably, the second gas delivery channels 1020 are distributed in the second gas injection mechanism 102 along a plurality of concentric circumferences, for example, as shown in fig. 4 and 5, which exemplarily illustrate that the second gas delivery channels 1020 are distributed in the second gas injection mechanism 102 along three concentric circumferences, a first circumference 110, a second circumference 120, and a third circumference 130. The number of second gas transfer passages 1020 may be the same or different on each circumference, and the size of the second gas transfer passages 1020 may be the same or different on each circumference, with at least one circumference containing the rotating gas flow passages 1026. When the rotary air flow passages 1026 are distributed over a plurality of circumferences, the number of rotary air flow passages 1026 on each circumference may be the same or different. However, regardless of whether the number of rotational flow channels 1026 on each circumference is the same, the rotational flow channels 1026 have at least one of the following characteristics from the innermost annular region to the outermost annular region of the concentric annular region (i.e., from the first circumference 110 to the third circumference 130): (1) The area of the cone bottom in the outermost annular region is not smaller than the area of the cone bottom in the innermost annular region; or the area of the conical bottom of the conical channel 1026-1 gradually increases; or the area of the conical bottom of the conical channel 1026-1 is gradually increased, and wherein the areas of the conical bottoms of the conical channels in at least two adjacent annular regions are the same; (2) Outermost annular region middle cornerNot less than the angle/>, in the innermost annular regionOr angle/>Gradually increasing; or angle/>Gradually increasing and wherein the angle in at least two adjacent annular regions/>The same; (3) Outermost annular region middle cornerNot less than the angle/>, in the innermost annular regionOr angle/>Gradually increasing; or angle/>Progressively larger and wherein/>, in at least two adjacent annular regionsThe same applies. Thus, the difference between the gas flow velocity direction of the gas flow ejected from the rotating gas flow channels 1026 on the first circumference 110 near the inner region (i.e., the first gas injection mechanism 101) and the gas flow velocity direction of the gas flow ejected from the first gas injection mechanism 101 (the first gas delivery channel 1010 is a vertical gas flow channel) is minimized, the influence on the gas flow in the inner gas phase reaction region is reduced, the tangential velocity and momentum of the gas flow ejected from the rotating gas flow channels 1026 on the second circumference 120 and the third circumference 130 are gradually increased to reduce the impact of the flow mixture in the edge region, thereby improving the stability of the overall gas flow, while helping to improve the utilization ratio of the carrier gas and the source material gas, so that the cost of material growth can be effectively reduced, and particle defects occurring in the growth material on the carrier tray 201 in the reaction chamber 200 can be reduced, while improving the yield of the product.

It is noted that the angles of the various rotary air flow passages 1026 contained in the same concentric annular region are preferablyThe same applies. In some cases, however, it may be possible to choose the angle/>, for each rotating gas flow channel 1026, in the same concentric annular region, in order to obtain a better spatial distribution in the rotating gas flowAre set differently. The angle/>, of each rotating gas flow channel 1026 when contained in the same concentric annular regionThe angle/>, for different concentric annular regions, is not the sameIn comparison, the angle/>, in each concentric annular regionFor the angle/>, of each rotating gas flow channel 1026 in each concentric annular regionAverage value of (2). Likewise, angle/>As is the design of (c), and will not be described in detail herein.

In the reaction chamber 200, the carrier plate 201 is typically rotated such that the flow field near the edge of the carrier plate 201 has a tangential flow velocity that is entrained by the carrier plate 201 in addition to a flow velocity along the main axis of the reaction chamber 200. The tangential flow velocity increases the overall velocity of the edge flow field airflow, particularly where the tangential flow velocity is greater, eddies are created in the flow field in the direction of the incoming flow in the edge region of the carrier disc 201, and the faster the carrier disc 201 rotates, the more likely eddies are created. In particular, the carrier platter 201 may generate significant swirling during high speed rotation. Since the tangential velocity and momentum of the rotating air flow injected at the periphery of the air injection mechanism 100 of the present invention exist, and the rotating direction of the rotating air flow is consistent with the rotating direction of the carrier plate 201, the relative velocity of the air flow flowing to the edge of the carrier plate (and dragged by the carrier plate) by the edge incoming flow and the inner injection flow can be reduced, and the flow impact mixing and streamline steering process of the flow field at the edge area is more stable, so that the generation of vortex can be restrained or completely eliminated. The second gas delivery channels 1020 are distributed along multiple concentric circumferences in the second gas injection mechanism 102 to better adjust the distribution of the rotating flow field and to better interface the rotating gas flow with the gas flow in the interior region.

The gas injection mechanism is described above by taking the example of a vertical flow chamber with the gas injection mechanism at the upper part and the bearing plate at the lower part as an example, and it should be understood that the gas injection mechanism provided by the invention can be adopted in any type of reaction chamber as long as vortex can be generated due to rotation of the bearing plate in the reaction chamber so as to inhibit or completely eliminate the vortex and balance the gas flow.

Example two

The present embodiment provides a gas injection mechanism, which is the same as the first embodiment, and the differences are not repeated, and therefore in this embodiment, as shown in fig. 8, only the second gas injection mechanism 102' is shown, and the second gas injection mechanism 102' is also distributed with a plurality of second gas conveying channels 1020'. Wherein the distribution of the second gas delivery channels 1020 'in the second gas injection mechanism 102' is the same as the distribution of the second gas delivery channels 1020 in the second gas injection mechanism 102 in the first embodiment. In addition, the second gas conveying channel 1020 'of the present embodiment also includes a rotary gas flow channel 1026', the rotary gas flow channel 1026 'includes a tubular channel 1026' -2 and a cone-shaped channel 1026'-1, the cone top of the cone-shaped channel 1026' -1 is communicated with the tubular channel 1026'-2, the cone bottom of the cone-shaped channel 1026' -1 is an air outlet surface, and the air outlet surface is a non-circular air outlet surface, for example, may be elliptical, diamond, rectangular, triangular, semicircular, polygonal, or the like. Preferably, as shown in FIG. 10, the cone base of the cone-shaped channel 1026' -1 is elliptical. Likewise, the tangential plane to the main axis B that defines the point of the bottom centroid O of the pyramidal passageway 1026'-1 is the tangential plane to the point of the bottom centroid O of the pyramidal passageway 1026' -1. The cone axis of the cone-shaped channel 1026' -1 has an angle between its projection onto the tangential plane of the bottom centroid O-point and the main axis BThe tubular shaft of the tubular passage 1026' -2 communicating with the cone-like passage 1026' -1 has an angle/>, between the projection of the tubular shaft on the tangential plane of the centroid O-point of the bottom surface of the cone-like passage 1026' -1 and the main axis BAnd angle/>Sum angle/>At least one of which is other than 0. The difference is that: an angle θ1 is formed between a perpendicular plane of the cone axis of at least a portion of the rotational gas flow channel 1026 'and a tangential plane of the base centroid of the cone-shaped channel 1026' -1, an angle θ2 is formed between a perpendicular plane of the tube axis and a tangential plane of the base centroid of the cone-shaped channel 1026'-1, and at least one of the angle θ1 and the angle θ2 is different from 0, whereby a gas flow velocity of the gas ejected from at least a portion of the rotational gas flow channel 1026' includes a tangential component, an axial component, and a radial component.

As shown in fig. 9, a partially enlarged view of the portion of circle P in fig. 8 is shown. Wherein, the centroid of the cone bottom surface of the cone-shaped channel 1026'-1 is defined as the point O, the cone top is the point O1, the end point of the tube axis of the tubular channel 1026' -2 at the joint of the tubular channel 1026'-2 and the cone-shaped channel 1026' -1 is the point O2, and the geometric center of the tubular channel 1026'-2 at one end of the second side 1025 of the second gas injection mechanism 102' is the point O3; namely, the connection line between the O point and the O1 point is a conical shaft OO1 of the conical channel 1026'-1, the connection line between the O2 point and the O3 point is a tubular shaft O2O3 of the tubular channel 1026' -2, the tangential plane passing through the O point and relative to the main axis B is a tangential plane P1 where the O point is located, namely, a plane formed by the tangential line of the O point (tangential line of the O point and relative to the main axis B) and the axial line of the O point (a straight line passing through the O point and parallel to the main axis B), and the plane formed by the axial line of the conical shaft OO1 and the axial line of the O point is a conical shaft perpendicular plane P2; a plane parallel to the tangential plane P1 through the O2 point is defined as P3, and a plane formed by the axial line of the tube axes O2O3 and O2 (a line passing through the O2 point and parallel to the main axis B) is defined as a tube axis perpendicular plane P4. As also shown in fig. 9, the tangent plane P1 of the O-point forms an angle θ1 with the cone axis perpendicular plane P2, the tube axis perpendicular plane P4 forms an angle θ2 with the plane P3, and at least one of the angle θ1 and the angle θ2 is not equal to 0 °. For example, θ1=0° and θ2=0°, the structure of the rotating airflow channel 1026 shown in fig. 7 in the first embodiment (the cone axis and the tube axis are both located on the tangential plane of the bottom centroid O point), and the airflow velocity of the ejected gas only includes a tangential component and an axial component.

Preferably, the angles θ1 and θ2 are the same in magnitude and the perpendicular to the axis of the cone coincides with the direction of deflection of the perpendicular to the axis of the cone relative to the tangent plane of the centroid of the bottom surface of the cone-shaped channel 1026' -1.

The ratio of the radial component to the axial component of the velocity of the rotating gas stream should not be too great, which would otherwise have a large effect on the gas flow in the interior region, which would be detrimental to the equalization of the gas injected into the reaction chamber 200. Preferably, 0 DEG.ltoreq.θ1.ltoreq.30°,0 DEG.ltoreq.θ2.ltoreq.30°.

The structure of the resulting rotary air flow channel 1026 'is thus as shown in fig. 10, i.e. wherein the tubular channel 1026' -2 and/or the cone-like channel 1026'-1 are skewed with respect to the tangent plane of the main axis B (the plane in which the tangential line and the axial line diverge) with respect to the centroid of the bottom surface of the cone-like channel 1026' -1 of the rotary air flow channel 1026.

The gas flow velocity of the gas injected by the above-described rotating gas flow channel 1026' of the present embodiment includes not only an axial component and a tangential component, but also a radial component, and for reaction chambers of different construction ratios and usage scenarios, the introduction of a rotating gas flow whose gas flow velocity includes a radial component can further reduce the vortex.

Example III

The present embodiment provides a gas injection mechanism, where the second gas injection mechanism 102 in the gas injection mechanism of the present embodiment includes a plurality of second gas delivery channels 1020, and the second gas delivery channels 1020 may be all the rotating gas flow channels 1026 in the first embodiment, may be all the rotating gas flow channels 1026' in the second embodiment, may be a combination of the vertical gas flow channels and the rotating gas flow channels 1026 in the first embodiment, may be a combination of the vertical gas flow channels and the rotating gas flow channels 1026' in the second embodiment, and may be a combination of the vertical gas flow channels, the rotating gas flow channels 1026 in the first embodiment, and the rotating gas flow channels 1026' in the second embodiment. The specific type of second gas delivery channel 1020 may be dependent on different gas phase reaction apparatus, usage scenarios and process requirements.

Example IV

The present embodiment provides a gas injection mechanism, where the second gas injection mechanism 102 in the gas injection mechanism of the present embodiment includes a plurality of second gas conveying channels 1020, and the structure of the second gas conveying channels 1020 may be any one of the first to third embodiments, and the distribution manner of each second gas conveying channel 1020 is the same as that of the first embodiment.

In this embodiment, the second gas delivered by the second gas injection mechanism 102 comes from the same gas supply end, and the gas delivered by the second gas injection mechanism 102 is regulated and controlled uniformly.

As shown in fig. 1, the second gas injection mechanism 102 located in the outer region of the gas injection mechanism 100 is supplied with the same gas from the gas supply end 300, and thus the kinds and components of the second gases supplied into the reaction chamber 200 from the respective second gas supply passages 1020 are the same. It should be noted that the same gas is not a single gas species, but the same gas is supplied from each of the second gas supply channels 1020 into the reaction chamber 200, and may be a single gas or a mixed gas. For example, for group III-V MOCVD, the second gas may be a group V hydride source gas and a carrier gas, or a purge gas.

A control unit (not shown), such as a valve, a mass flow controller, a pressure controller, etc., is further disposed between the gas supply end 300 and the second gas injection mechanism 102, and the control unit performs unified regulation and control on the gas of the second gas injection mechanism 102, so that the types and components of the gas conveyed in the second gas injection mechanism 102 are the same.

Example five

The present embodiment provides a gas injection mechanism, which differs from the fourth embodiment in that: in the fourth embodiment, the second gas delivered by the second gas injection mechanism 102 is from the same gas supply end 300, so that the gas delivered by the second gas injection mechanism 102 is regulated and controlled uniformly, while in the present embodiment, the second gas injection mechanism 102″ is divided into a plurality of sub-areas that are independent of each other, and the second gas delivered in at least two sub-areas is regulated and controlled independently.

As shown in fig. 11, only a schematic structural diagram of the second gas injection mechanism 102 "in a top view is shown, and a plurality of second gas conveying channels 1020" are also distributed in the second gas injection mechanism 102 ". The second gas injection mechanism 102″ of the present embodiment is partitioned into a plurality of sub-regions independent of each other by at least one partition 103.

In an alternative embodiment, the reaction chamber 200 is provided with a top plate (not shown) that covers the second side 1025 of the second gas injection mechanism 102", and a plurality of spacers 103 are provided on the top plate, where the spacers 103 may be ribs protruding from the top plate toward the second side 1025 of the second gas injection mechanism 102", and the spacers 103 are located between the second side 1025 of the second gas injection mechanism 102 "and the top plate. When the top plate is mounted over the second side 1025 of the second gas injection mechanism 102", the separator 103 divides the second gas delivery channel 1020" in the second gas injection mechanism 102 "into a plurality of sub-regions.

In an alternative embodiment, as shown in fig. 11, the spacers 103 may be formed as ribs protruding from the second side 1025 of the second gas injection mechanism 102″ toward the top plate. The spacer 103 is located between the second side 1025 of the second gas injection mechanism 102 "and the top plate. When the top plate is mounted over the second side 1025 of the second gas injection mechanism 102", the separator 103 divides the second gas delivery channel 1020" in the second gas injection mechanism 102 "into a plurality of sub-regions.

As shown in fig. 11, the spacers 103 may be circumferentially distributed along the circumference of the second gas injection mechanism 102 "dividing the second gas injection mechanism 102" into at least two concentric annular sub-regions. Preferably, the flow rate of the gas introduced in the outermost subarea is adjusted to be not less than the flow rate of the gas introduced in the innermost subarea; or adjusting the average molecular weight of the gas introduced in the outermost sub-region to be not smaller than the average molecular weight of the gas introduced in the innermost sub-region; or adjusting the flow rate of the gas introduced in the outermost subregion to be not smaller than the flow rate of the gas introduced in the innermost subregion, and the average molecular weight of the gas introduced in the outermost subregion to be not smaller than the average molecular weight of the gas introduced in the innermost subregion. Preferably, the flow rate of the introduced gas is regulated to be gradually increased from the innermost subarea to the outermost subarea; or adjusting the average molecular weight of the introduced gas to gradually increase; or the flow rate of the gas is regulated and the average molecular weight is gradually increased. Preferably, the flow rate of the gas introduced is regulated to be gradually increased from the innermost subarea to the outermost subarea and the flow rates of the gases in at least two adjacent subareas are the same; or adjusting the average molecular weight of the gas introduced to be gradually increased, wherein the average molecular weight of the gas in at least two adjacent sub-areas is the same; or the flow rate and the average molecular weight of the introduced gas are gradually increased, wherein the flow rates of the gases in at least two adjacent subareas are the same and the average molecular weights of the gases are the same.

Or the spacers 103 are formed in the second gas injection mechanism 102″ extending in the center-to-edge direction of the gas injection mechanism 100, dividing the second gas injection mechanism 102″ into at least two sub-areas of a sector-ring shape, preferably, the areas of the at least two sub-areas of a sector-ring shape are the same.

In this embodiment, taking the disc-shaped gas injection mechanism 100 in the circular reaction chamber 200 as an example, the spacers 103 are circumferentially distributed along the circumference of the second gas injection mechanism 102", as shown in fig. 11, and two spacers 103 are taken as an example, and the two spacers 103 and the side wall of the second gas injection mechanism 102" divide the second gas injection mechanism 102 "into three sub-regions: a first sub-region 1021 located radially innermost, a second sub-region 1022 located outside the first sub-region 1021, and a third sub-region 1023 located radially outermost. In an alternative embodiment, the first sub-area 1021, the second sub-area 1022, and the third sub-area 1023 are respectively connected to the independent air supply terminal 300. The gas supply end 300 includes a plurality of different gas sources, each of the sub-regions is connected to the plurality of different gas sources, and a control unit (not shown), such as a valve, a mass flow controller, a pressure controller, etc., is disposed between the gas sources and each of the sub-regions, and the control unit individually controls the gas flowing into the tubular passages in each of the sub-regions, so that parameters such as the composition and the flow rate of the gas flowing into the first sub-region 1021, the second sub-region 1022, and the third sub-region 1023 may be the same or different, and the parameters may be individually controlled, thereby individually controlling the flow rates or the components of the gas flowing into the first sub-region 1021, the second sub-region 1022, and the third sub-region 1023. Thereby increasing the control possibility of the gas introduced into the reaction chamber 200 through the second gas injection mechanism, and achieving a better effect of suppressing or completely eliminating the vortex gas flow of the reaction chamber.

In an alternative embodiment, the first sub-area 1021 and the second sub-area 1022 are connected to the same gas source and controlled by the same control unit, and the third sub-area 1023 is connected to another gas source and controlled by another control unit separately. Other similar combinations are also possible, so long as the gas in the sub-regions can be controlled individually, and will not be described in detail herein.

As shown in fig. 11, the flow rates of the second gases injected from the first sub-region 1021, the second sub-region 1022 and the third sub-region 1023 are F1, F2 and F3 respectively in the radial direction from inside to outside, and the average molecular weights of the injected second gases are M1, M2 and M3 respectively, wherein each sub-region is independently controlled such that: f1 is less than or equal to F2 is less than or equal to F3, or M1 is less than or equal to M2 is less than or equal to M3, or F1 is less than or equal to F2 is less than or equal to F3 and M1 is less than or equal to M2 is less than or equal to M3.

Because the gas flow in the reaction chamber 200 is required to be adjusted and matched by fine distribution as the gas flow approaches to the inner region, the design of the subregion of the second gas injection mechanism can reduce the influence of the rotating gas flow on the gas flow in the inner region, thereby being beneficial to balancing the gas injected into the reaction chamber 200 and improving the utilization rate of the gas.

Example six

The present embodiment provides a gas injection mechanism, in which the second gas injection mechanism 102 may be any one of the first to fifth embodiments, and the first gas delivery channel 1010 of the first gas injection mechanism 101 may be a rotating gas flow channel, or a mixture of a vertical gas flow channel (the direction of the gas flow formed is vertically oriented toward the carrier plate) and a rotating gas flow channel, and the structure of the rotating gas flow channel is the same as that of the first and second embodiments. The angle formed between the direction of the air flow formed by the first air sprayed from the first air conveying channel and the main axis B is 0-90 degrees.

Example seven

The present embodiment provides a gas injection mechanism, the second gas injection mechanism 102 in the gas injection mechanism 100 of the present embodiment may be any one of the first to fifth embodiments, the first gas injection mechanism 101 in the gas injection mechanism 100 of the present embodiment is a horizontal flow central gas inlet device, at this time, the second gas injection mechanism 102 surrounds the central gas inlet device, and a certain interval is provided between the second gas injection mechanism 102 and the central gas inlet device.

The angle formed between the direction of the air flow formed by the first air ejected from the first air conveying channel 1010 and the main axis B is 0-90 degrees. Illustratively, if the air outlet of the first air delivery channel 1010 is located at the bottom surface of the central air inlet device, the air flow ejected by the first air delivery channel 1010 is perpendicular to the carrier plate 201, that is, the air flow direction is along the axial direction of the carrier plate 201; if the air outlet of the first air delivery channel 1010 is located on the side of the central air inlet device and not facing the carrier plate 201, the first air delivery channel 1010 may jet the air flow along the radial direction of the carrier plate 201, or the first air delivery channel 1010 may jet the air flow along the direction having a certain angle with the axial direction of the carrier plate 201.

Example eight

The present embodiment provides a vapor phase reaction apparatus, which may be, for example, a vapor phase deposition apparatus, specifically, a chemical vapor deposition apparatus, a physical vapor deposition apparatus, a plasma enhanced vapor deposition apparatus, a Metal Organic Chemical Vapor Deposition (MOCVD) apparatus, or the like.

Referring to fig. 1, the gas phase reaction apparatus includes a reaction chamber 200, a carrier plate 201, and a gas injection mechanism 100. Wherein the carrier plate 201 is disposed in the reaction chamber 200, and the carrier plate 201 is rotated during the gas phase reaction at a rotation speed of 200RPM or more. The gas injection mechanism 100 is disposed opposite the carrier platter 201 to inject a flow of reactant gas into the carrier platter 201. As shown in fig. 1, the gas phase reaction apparatus of the present embodiment has a reaction chamber 200, and the cross section of the reaction chamber 200 of the gas phase reaction apparatus is generally circular or similar to a circular structure, or may be a rectangular structure or other structures known to those skilled in the art, which will not be described herein. The reaction chamber 200 may be a vertical flow chamber in which gas is introduced in a vertical direction, or may be a horizontal flow chamber in which gas is introduced in a center.

The gas injection mechanism 100 in the reaction apparatus may be any of the gas injection mechanisms 100 described in the first to seventh embodiments, and thus, reference may be made to the descriptions of the first to seventh embodiments, and the description thereof will not be repeated here.

Example nine

The embodiment provides a manufacturing method of a gas injection mechanism, which is used for a gas phase reaction device, wherein the gas injection mechanism comprises a first gas injection mechanism positioned in a middle area and a second gas injection mechanism positioned in a peripheral area and surrounding the first gas injection mechanism.

The first gas injection mechanism and the second gas injection mechanism can be processed on the same plate, or the first gas injection mechanism and the second gas injection mechanism can be processed on different plates respectively and then are installed together to form the gas injection mechanism. Preferably, the first gas injection mechanism and the second gas injection mechanism are machined on different sheets and then mounted together.

Taking the gas injection mechanism 100 of the first embodiment as an example, the first gas injection mechanism 101 and the second gas injection mechanism 102 are processed on different plates, and then mounted together. The first gas injection mechanism 101 is manufactured by a method known in the art, and will not be described in detail herein. The second gas injection mechanism 102 may be manufactured by:

S1: providing a body having a thickness, the body comprising oppositely disposed first and second sides, the first side configured as an air outlet side defining a major axis perpendicular to a plane of the body and passing through a geometric center of the gas injection mechanism;

Referring to fig. 1, a main axis B is defined perpendicular to the plane of the first side 1024 of the main body and passing through the geometric center of the gas outlet face of the gas injection mechanism 100;

Cutting the body from the first side 1024 using a conical drill bit having a cone apex angle on the body, as shown in fig. 4-7, to obtain a plurality of cone-shaped channels 1026-1, the cone base of each cone-shaped channel 1026-1 being located on the first side 1024, the cone apex of each cone-shaped channel 1026-1 being located in the body between the first side 1024 and the second side 1025;

as shown in fig. 4 to 7, the tubular passages 1026-2 are in one-to-one correspondence with the cone-like passages 1026-1 to form a plurality of second gas conveying passages 1020 penetrating the main body in the thickness direction;

Wherein a tangential plane to the main axis B, which is defined through the centroid O point of the bottom surface of the cone-shaped channel 1026-1, is a tangential plane to the centroid O point of the bottom surface of the cone-shaped channel 1026-1, in at least a portion of the second gas delivery channel 1020, as shown in FIG. 6, the first direction is such that the cone axis of each cone-shaped channel 1026-1 has an angle between the projection of the cone axis onto the tangential plane to the centroid O point of the bottom surface thereof and the main axis B The second direction is such that the tube axis of each tubular passage 1026-2 in communication with each cone-like passage 1026-1 has an angle/>, between the projection of the tube axis of each tubular passage 1026-2 on the tangential plane of the base centroid O of cone-like passage 1026-1 and the main axis BAngle/>Sum angle/>Is not 0 such that at least a portion of the second gas transfer channels 1020 form a rotating gas flow channel 1026.

In an alternative embodiment, the steps S2 and S3 described above may be replaced with the following steps:

S2': cutting the body from the first side in a first direction using a conical drill bit having a cone apex angle to obtain a cone-shaped channel, the cone base of the cone-shaped channel being located on the first side, the cone apex of the cone-shaped channel being located in the body between the first side and the second side;

s3': cutting from the cone apex to the second side in a second direction or from the second side to the cone apex using a cylindrical drill bit having a diameter, obtaining a tubular passage in corresponding communication with the cone-like passage to form a second gas delivery passage penetrating the body in a thickness direction;

After the steps S2 'and S3', the method further includes performing step S4: and repeating the steps S2 'and S3' along the direction that the rotation direction of the rotating air flow formed by jetting the air from the second air injection mechanism is consistent with the rotation direction of a bearing disc which is positioned in the gas phase reaction device and is opposite to the air injection mechanism in the reaction process, so as to form a plurality of second air conveying channels.

Wherein a tangential plane to the main axis B defined through the centroid O of the bottom surface of the cone-shaped channel 1026-1 is a tangential plane to the centroid O of the bottom surface of the cone-shaped channel 1026-1, and wherein in at least a portion of the second gas delivery channel 1020 the first direction is such that the projection of the cone axis of the cone-shaped channel 1026-1 onto the tangential plane to the centroid O of the bottom surface thereof has an angle with the main axis BThe second direction is such that the tube axis of the tubular passage 1026-2 has an angle/>, between the projection of the tube axis of said conical passage 1026-1 onto the tangential plane of the centroid O-point of the bottom surface and the main axis BAngle/>Sum angle/>Is not 0 such that at least a portion of the second gas transfer channels 1020 are formed as rotating gas flow channels. The arrangement of the whirling gas flow channel 1026 on the first side 1024 of the body is such that when gas is ejected from the whirling gas flow channel 1026, a whirling gas flow is formed in a direction that coincides with the direction of rotation of the carrier plate 201 located in the gas phase reaction apparatus opposite to the gas injection mechanism 101 during the reaction. The specific structural features of the rotary airflow channel 1026 described above may be combined with the description of the first embodiment.

Referring to fig. 8 and 9, in another alternative embodiment, a second gas delivery channel 1020' is formed in the main body to form the second gas injection mechanism 102' in the same manner, and when the main body is cut to form the rotary gas flow channels 1026', at least part of the conical axis of each cone-shaped channel 1026' -1 in the rotary gas flow channels 1026' has an angle between the projection of the conical axis of the cone-shaped channel 1026' -1 on the tangential plane of the centroid O point of the bottom surface of the cone-shaped channel 1026' -1 and the main axis BThe tube axis has an angle/>, between the projection of the tube axis onto the tangential plane of the centroid O-point of the bottom surface of said cone-shaped channel 1026' -1 and the main axis BAnd/>At least one of which is other than 0, thereby forming a rotary air flow channel. And, a first direction of cutting the cone-shaped passage 1026' -1 forms an angle θ1 between a perpendicular plane where a taper axis of at least part of the rotating air flow passage 1026' is located and a tangential plane where a bottom centroid O of the cone-shaped passage 1026' -1 is located, and a second direction of cutting the tube-shaped passage 1026' -2 forms an angle θ2 between a perpendicular plane where a tube axis is located and a tangential plane where a bottom centroid O of the cone-shaped passage 1026' -1 is located, and at least one of θ1 and θ2 is not 0. The specific structure of the rotary air flow channel 1026' can be described with reference to the second embodiment.

In this embodiment, the main body may be perforated to form a vertical air flow passage parallel to the main axis B. That is, the second gas injection mechanism may include the vertical gas flow channel and the rotary gas flow channel 1026 in the first embodiment, or may include the vertical gas flow channel and the rotary gas flow channel 1026 'in the second embodiment, or may include the vertical gas flow channel and the rotary gas flow channel 1026 in the first embodiment and the rotary gas flow channel 1026' in the second embodiment. The gas injection mechanism manufactured by the method can effectively inhibit or completely eliminate the generation of vortex in the reaction chamber, so that the laminar flow characteristic of the flow field of the reaction chamber is more stable.

The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.

Claims

1. A method for manufacturing a gas injection mechanism for a gas phase reaction apparatus, the gas injection mechanism comprising a first gas injection mechanism located in a central region and a second gas injection mechanism located in a peripheral region and surrounding the first gas injection mechanism, characterized in that the gas phase reaction apparatus comprises at least one separator dividing the second gas injection mechanism into a plurality of mutually independent sub-regions, the separator being along the second gas injection mechanism

The circumference of the gas injection mechanism is distributed in a circumference form, or the separator extends along the direction from the center to the edge of the gas injection mechanism to form in a second gas injection mechanism, and the method for manufacturing the second gas injection mechanism comprises the following steps:

2. The method of claim 1, wherein in at least a portion of the second gas delivery channel, the first direction further causes an angle θ1 between a perpendicular to the axis of the rotary gas flow channel and a tangential plane to a centroid of a bottom surface of the cone-shaped channel, the second direction further causes an angle θ2 between a perpendicular to the axis of the pipe and a tangential plane to a centroid of a bottom surface of the cone-shaped channel, and at least one of the angle θ1 and the angle θ2 is not 0, wherein: the straight line passing through the bottom surface centroid O point of the cone-shaped channel and being parallel to the main axis is the axial line of the O point, the straight line passing through the end point O2 point of the tube shaft at the joint of the tubular channel and the cone-shaped channel and being parallel to the main axis is the axial line of the O2 point, the vertical plane where the cone shaft is located is a plane formed by the axial lines of the cone shaft and the O point, and the vertical plane where the tube shaft is located is a plane formed by the axial lines of the tube shaft and the O2 point.

3. The method of manufacturing a gas injection mechanism according to claim 1, wherein:

Defining a main axis, wherein the main axis passes through the geometric center of the gas injection mechanism perpendicular to the plane of the first side of the main body, and the manufacturing method of the gas injection mechanism further comprises:

4. The method of claim 1, wherein the first gas injection mechanism and the second gas injection mechanism are fabricated on the same sheet material, or the first gas injection mechanism and the second gas injection mechanism are fabricated separately on different sheet materials.

5. The method of claim 1, wherein the gas phase reaction apparatus has a reaction chamber provided with a top plate provided with a plurality of the spacers.

6. The method of manufacturing a gas injection mechanism according to claim 5, wherein the spacer is a rib protruding from the top plate in a second side direction of the second gas injection mechanism.

7. The method of manufacturing a gas injection mechanism according to claim 1, wherein the gas phase reaction apparatus has a reaction chamber provided with a ceiling, and the separator is formed as a ridge protruding from the second side of the second gas injection mechanism toward the ceiling.

8. The method of manufacturing a gas injection mechanism according to claim 1, wherein when the spacers are circumferentially distributed along the circumference of the second gas injection mechanism, the spacers divide the second gas injection mechanism into at least two concentric annular subregions.

9. The method of claim 1, wherein the spacer divides the second gas injection mechanism into at least two sub-areas of a sector shape when the spacer is formed in the second gas injection mechanism extending in a center-to-edge direction of the gas injection mechanism.

10. The method of claim 9, wherein at least two of the sub-areas of the sector-ring are the same in area.