CN117921449A - Chemical mechanical planarization method for silicon carbide substrate - Google Patents
Chemical mechanical planarization method for silicon carbide substrate Download PDFInfo
- Publication number
- CN117921449A CN117921449A CN202410275716.6A CN202410275716A CN117921449A CN 117921449 A CN117921449 A CN 117921449A CN 202410275716 A CN202410275716 A CN 202410275716A CN 117921449 A CN117921449 A CN 117921449A
- Authority
- CN
- China
- Prior art keywords
- polishing
- silicon carbide
- polishing solution
- carbide substrate
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 45
- 239000000758 substrate Substances 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000000126 substance Substances 0.000 title claims abstract description 12
- 238000005498 polishing Methods 0.000 claims abstract description 122
- 229910000420 cerium oxide Inorganic materials 0.000 claims abstract description 17
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000007788 liquid Substances 0.000 claims abstract description 13
- 239000007800 oxidant agent Substances 0.000 claims abstract description 10
- 230000001590 oxidative effect Effects 0.000 claims abstract description 7
- 239000002904 solvent Substances 0.000 claims abstract description 6
- 150000002500 ions Chemical class 0.000 claims description 11
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 7
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 6
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 6
- 239000003153 chemical reaction reagent Substances 0.000 claims description 6
- 239000002270 dispersing agent Substances 0.000 claims description 6
- 239000004094 surface-active agent Substances 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- 238000007517 polishing process Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical group O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- 239000012445 acidic reagent Substances 0.000 claims description 4
- 235000001014 amino acid Nutrition 0.000 claims description 4
- 150000001413 amino acids Chemical class 0.000 claims description 4
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 4
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 4
- 239000004471 Glycine Substances 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 claims description 3
- BCKXLBQYZLBQEK-KVVVOXFISA-M Sodium oleate Chemical compound [Na+].CCCCCCCC\C=C/CCCCCCCC([O-])=O BCKXLBQYZLBQEK-KVVVOXFISA-M 0.000 claims description 3
- CBTVGIZVANVGBH-UHFFFAOYSA-N aminomethyl propanol Chemical compound CC(C)(N)CO CBTVGIZVANVGBH-UHFFFAOYSA-N 0.000 claims description 3
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 3
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 claims description 3
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 claims description 2
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 claims description 2
- ONIBWKKTOPOVIA-BYPYZUCNSA-N L-Proline Chemical compound OC(=O)[C@@H]1CCCN1 ONIBWKKTOPOVIA-BYPYZUCNSA-N 0.000 claims description 2
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 claims description 2
- 239000002202 Polyethylene glycol Substances 0.000 claims description 2
- 239000004793 Polystyrene Substances 0.000 claims description 2
- ONIBWKKTOPOVIA-UHFFFAOYSA-N Proline Natural products OC(=O)C1CCCN1 ONIBWKKTOPOVIA-UHFFFAOYSA-N 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- 235000003704 aspartic acid Nutrition 0.000 claims description 2
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 claims description 2
- 150000002191 fatty alcohols Chemical class 0.000 claims description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 2
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 claims description 2
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims description 2
- 229920001223 polyethylene glycol Polymers 0.000 claims description 2
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 2
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 2
- 229920002223 polystyrene Polymers 0.000 claims description 2
- 239000000600 sorbitol Substances 0.000 claims description 2
- 239000003002 pH adjusting agent Substances 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052710 silicon Inorganic materials 0.000 abstract description 9
- 239000010703 silicon Substances 0.000 abstract description 9
- 230000003746 surface roughness Effects 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 239000000377 silicon dioxide Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 239000010410 layer Substances 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical group O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- MLIWQXBKMZNZNF-KUHOPJCQSA-N (2e)-2,6-bis[(4-azidophenyl)methylidene]-4-methylcyclohexan-1-one Chemical compound O=C1\C(=C\C=2C=CC(=CC=2)N=[N+]=[N-])CC(C)CC1=CC1=CC=C(N=[N+]=[N-])C=C1 MLIWQXBKMZNZNF-KUHOPJCQSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Abstract
The invention relates to the technical field of polishing, in particular to a chemical mechanical planarization method of a silicon carbide substrate, which comprises the following steps: taking cerium oxide as an abrasive and uniformly mixing the cerium oxide with a solvent to obtain polishing solution; the polishing solution comprises an oxidant; and (3) polishing the silicon carbide substrate by adopting a hard polishing pad and combining polishing liquid. The method can realize the polishing treatment of the silicon carbide substrate under the condition of only adopting the cerium oxide abrasive polishing solution and the hard polishing pad, so that the removal rate of the silicon surface of the silicon carbide wafer is greatly improved to 4-6 mu m/h, the CMP process time is greatly shortened, and the good CMP result that the surface roughness of the silicon carbide substrate after the polishing treatment can reach 0.073-0.083nm can be ensured.
Description
Technical Field
The invention relates to the technical field of polishing, in particular to a chemical mechanical planarization method of a silicon carbide substrate.
Background
With the development of semiconductor technology, silicon substrate materials have not been able to meet the demands of the fields such as functional devices and radio frequency devices. Compared with a power device with a silicon substrate, the power device with silicon carbide as the substrate has the advantages of high voltage resistance, high temperature resistance, low energy loss, high power density and the like, and can realize miniaturization and light weight of a power module.
The substrate material is thinned and then subjected to a Chemical Mechanical Planarization (CMP) method to ensure global planarization. In the silicon carbide CMP in the prior art, an alumina polishing solution and a hard polishing pad (with the shore hardness of 60 HD) are adopted for rough polishing, and then an alumina and silica mixed polishing solution and a soft polishing pad (with the shore hardness of 22 HD) are adopted for fine polishing. Although the CMP method can obtain excellent surface quality, the removal rate of the silicon carbide wafer is obviously reduced under the condition, and the removal rate is generally lower than 2 mu m/h, so that the whole CMP process time is greatly increased, and the silicon carbide wafer can be processed for more than 60 minutes to obtain better polishing effect.
Disclosure of Invention
Accordingly, the present invention has been made to solve the above-mentioned problems occurring in the prior art, and it is an object of the present invention to provide a method for chemical mechanical planarization of a silicon carbide substrate, which overcomes the drawbacks of the conventional CMP method that it is impossible to obtain an excellent surface quality of a silicon carbide substrate at a high removal rate of a silicon carbide wafer.
In order to achieve the above purpose, the present invention provides the following technical solutions:
a method of chemical mechanical planarization of a silicon carbide substrate, comprising:
Taking cerium oxide as an abrasive and uniformly mixing the cerium oxide with a solvent to obtain polishing solution;
the polishing solution comprises an oxidant;
and (3) polishing the silicon carbide substrate by adopting a hard polishing pad and combining polishing liquid.
Preferably, the oxidant is at least one of permanganate, persulfate and periodate;
And/or the solvent is deionized water;
and/or the mass concentration of the ceria in the polishing solution is 1.5-3wt%;
and/or the mass concentration of the oxidant in the polishing solution is 1-5wt%.
Preferably, the polishing solution further comprises a pH regulator, a surfactant and an accelerator.
Preferably, the pH regulator is at least one of nitric acid, acetic acid, citric acid and phosphoric acid;
And/or the surfactant is at least one of sodium dodecyl sulfate, sodium oleate, sodium dodecyl benzene sulfonate and fatty alcohol polyoxyethylene ether;
and/or the accelerator is at least one of an amino acid reagent and an alcohol reagent.
Preferably, the amino acid reagent is at least one of glycine, aspartic acid and proline;
and/or the alcohol reagent is at least one of glycol, glycerol, diethanolamine and sorbitol.
Preferably, the pH regulator regulates the pH value of the polishing solution to 2-4;
and/or the mass concentration of the surfactant in the polishing solution is 0.3-1wt%;
and/or the mass concentration of the accelerator in the polishing solution is 0.5-2wt%.
Preferably, the abrasive has a particle size D 50 of 50-100nm;
and/or the viscosity of the polishing solution is 1-2 mpa.s;
and/or the Zeta potential of the polishing solution is 40-50mV.
Preferably, the Ce 3+ ion concentration in the polishing solution accounts for 10-30% of the total Ce ion concentration;
and/or the hardness of the hard polishing pad is 45-60HD;
and/or the polishing solution further comprises a dispersing agent.
Preferably, the dispersing agent is at least one of polystyrene, polyethylene glycol and AMP-95;
And/or the mass concentration of the dispersing agent in the polishing solution is 0.3-0.5wt%.
Preferably, the rotation speed of the polishing disc in the polishing treatment is 110-120rpm/min;
and/or the rotation speed of the polishing head in the polishing treatment is 104-114rpm/min;
And/or the polishing process has a center pressure of 6-8psi;
And/or the edge pressure of the polishing treatment is 1-3psi;
and/or, the polishing process has a retainer ring pressure of 9-11psi;
And/or the flow rate of the polishing solution for the polishing treatment is 40-70mL/min.
In the present invention, the sources of Ce 3+ ions are: ce 3+ and Ce 4+ in ceria exist in two ionic forms of Ce due to internal redox dynamic equilibrium and do not require additional additions. The roughness standard of the silicon carbide substrate on a practical production line is below 0.1 nm.
The technical scheme of the invention has the following advantages:
A method of chemical mechanical planarization of a silicon carbide substrate, comprising: taking cerium oxide as an abrasive and uniformly mixing the cerium oxide with a solvent to obtain polishing solution; the polishing solution comprises an oxidant; and (3) polishing the silicon carbide substrate by adopting a hard polishing pad and combining polishing liquid. The ceria polishing solution for the silicon carbide substrate is mainly removed by chemical reaction, and specifically comprises the following components: the silicon carbide on the surface layer of the substrate is oxidized into silicon dioxide under the action of an oxidizing agent, and the silicon dioxide is removed under the action of Ce 3+ and combined with a hard polishing pad. Based on the mechanism, the polishing treatment of the silicon carbide substrate can be realized under the condition of only adopting the cerium oxide abrasive polishing solution and the hard polishing pad by the method, so that the removal rate of the silicon surface of the silicon carbide wafer is greatly improved and can reach 4-6 mu m/h, the CMP flow time is greatly shortened, and the good CMP result that the surface roughness of the silicon carbide substrate after the polishing treatment can reach 0.073-0.083nm can be ensured.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic (top) view of a silicon carbide substrate surface layer oxidized to form a silicon dioxide layer in example 1 of the present invention;
FIG. 2 is a schematic (side) view of the silicon carbide substrate surface layer oxidized to form a silicon dioxide layer in example 1 of the present invention;
FIG. 3 is a schematic diagram showing the principle of bulk removal of a silicon dioxide layer formed on a silicon carbide substrate in example 1 of the present invention under the combined action of an accelerator and Ce 3+;
FIG. 4 is a schematic view showing a state in which the silicon carbide substrate wafer is not subjected to CMP under the condition of a hard polishing pad in example 1 of the present invention;
Fig. 5 is a schematic view showing a state in which a silicon carbide substrate wafer is subjected to CMP under a hard polishing pad in example 1 of the present invention.
Detailed Description
The following examples are provided for a better understanding of the present invention and are not limited to the preferred embodiments described herein, but are not intended to limit the scope of the invention, any product which is the same or similar to the present invention, whether in light of the present teachings or in combination with other prior art features, falls within the scope of the present invention.
The specific experimental procedures or conditions are not noted in the examples and may be followed by the operations or conditions of conventional experimental procedures described in the literature in this field. The reagents or apparatus used were conventional reagent products commercially available without the manufacturer's knowledge.
In the following examples and comparative examples, the untreated silicon carbide substrate had a roughness of 4nm and the duration of the polishing treatment was 30 minutes.
Example 1
The embodiment provides a chemical mechanical planarization method of a silicon carbide substrate, which comprises the following steps:
1) Obtaining polishing solution: uniformly mixing 2wt% of cerium oxide, 3wt% of potassium permanganate, 0.6wt% of sodium dodecyl sulfate, 1.2wt% of glycine and the balance of deionized water, and adjusting the pH value of the polishing solution to 2 by adopting acetic acid to prepare the polishing solution, wherein the particle size D 50 of the cerium oxide abrasive is 84nm, the viscosity of the polishing solution is 1.6 mpa.s, the Zeta potential of the polishing solution is 48mV, and the concentration of Ce 3+ ions in the polishing solution is 26% of the concentration of the total Ce ions;
2) Polishing: under the conditions of the retaining ring pressure of 11psi, the edge pressure of 3psi, the center pressure of 8psi, the rotation speed of a polishing disk of 113rpm/min, the rotation speed of a polishing head of 107rpm/min, the flow rate of the polishing liquid of 50mL/min and the polishing liquid prepared in the step 1) and the polishing pad with the Shore hardness of 60HD, good CMP results with the removal rate of 6 mu m/h and the surface roughness of 0.083nm are obtained after polishing the silicon surface of silicon carbide for 30 min. In this embodiment, a schematic (top) view of a silicon carbide substrate surface layer oxidized to form a silicon dioxide layer is shown in fig. 1, a schematic view of a silicon dioxide layer formed on a silicon carbide substrate under the combined action of an accelerator and Ce 3+ is shown in fig. 3, a schematic view of a state of a silicon carbide substrate wafer when CMP is not performed under a hard polishing pad condition is shown in fig. 4, and a schematic view of a state of a silicon carbide substrate wafer when CMP is performed under a hard polishing pad condition is shown in fig. 5.
Example 2
The embodiment provides a chemical mechanical planarization method of a silicon carbide substrate, which comprises the following steps:
1) Obtaining polishing solution: uniformly mixing 1.5wt% of cerium oxide, 1wt% of potassium persulfate, 0.3wt% of sodium oleate, 0.5wt% of ethylene glycol and the balance of deionized water, and adjusting the pH value of the polishing solution to 3 by adopting citric acid to prepare the polishing solution, wherein the particle diameter D 50 of the cerium oxide abrasive is 84nm, the viscosity of the polishing solution is 1.1 mpa.s, the Zeta potential of the polishing solution is 43mV, and the concentration of Ce 3+ ions in the polishing solution accounts for 17% of the concentration of the whole Ce ions;
2) Polishing: under the conditions of 10psi of retaining ring pressure, 2psi of edge pressure, 7psi of center pressure, 120rpm/min of polishing disk rotating speed, 114rpm/min of polishing head rotating speed, 40mL/min of polishing liquid flow rate, and 50HD of Shore hardness of the polishing liquid prepared in the step 1), good CMP result with the removal rate of 5 mu m/h and the surface roughness of 0.08nm is obtained after polishing the silicon surface of silicon carbide for 30min.
Example 3
The embodiment provides a chemical mechanical planarization method of a silicon carbide substrate, which comprises the following steps:
1) Obtaining polishing solution: uniformly mixing 3wt% of cerium oxide, 5wt% of potassium periodate, 1wt% of sodium dodecyl benzene sulfonate, 0.5wt% of AMP-95, 2wt% of diethanolamine and the balance of deionized water, and adjusting the pH value of the polishing solution to 4 by adopting nitric acid to prepare the polishing solution, wherein the particle size D 50 of a cerium oxide abrasive is 84nm, the viscosity of the polishing solution is 2 mpa.s, the Zeta potential of the polishing solution is 41mV, and the concentration of Ce 3+ ions in the polishing solution is 13% of the concentration of the total Ce ions;
2) Polishing: under the conditions of a retaining ring pressure of 9psi, an edge pressure of 1psi, a center pressure of 6psi, a polishing disc rotating speed of 110rpm/min, a polishing head rotating speed of 104rpm/min, a polishing liquid flow rate of 70mL/min, the polishing liquid prepared in the step 1) and a polishing pad with a Shore hardness of 45HD, good CMP results with a removal rate of 4 mu m/h and a surface roughness of 0.073nm are obtained after polishing a silicon surface of silicon carbide for 30min.
Comparative example 1
This comparative example differs from example 1 in that no oxidizing agent was added, and the other conditions were the same as in example 1. This comparative example achieved good CMP results with a removal rate of 1.6 μm/h and a surface roughness of 0.005nm after polishing the silicon face of silicon carbide.
Comparative example 2
This comparative example differs from example 1 in that cerium oxide in the polishing liquid of example 1 was replaced with manganese dioxide, and the other conditions were the same as in example 1. This comparative example achieves good CMP results with a removal rate of 4.6 μm/h and a surface roughness of up to 0.14nm after polishing the silicon face of silicon carbide for 30 min.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the invention.
Claims (10)
1. A method of chemical mechanical planarization of a silicon carbide substrate, comprising:
Taking cerium oxide as an abrasive and uniformly mixing the cerium oxide with a solvent to obtain polishing solution;
the polishing solution comprises an oxidant;
and (3) polishing the silicon carbide substrate by adopting a hard polishing pad and combining polishing liquid.
2. The method of claim 1, wherein the oxidizing agent is at least one of permanganate, persulfate, periodate;
And/or the solvent is deionized water;
and/or the mass concentration of the ceria in the polishing solution is 1.5-3wt%;
and/or the mass concentration of the oxidant in the polishing solution is 1-5wt%.
3. The method according to claim 1 or 2, wherein the polishing liquid further comprises a pH adjuster, a surfactant and an accelerator.
4. The method of claim 3, wherein the pH adjustor is at least one of nitric acid, acetic acid, citric acid, and phosphoric acid;
And/or the surfactant is at least one of sodium dodecyl sulfate, sodium oleate, sodium dodecyl benzene sulfonate and fatty alcohol polyoxyethylene ether;
and/or the accelerator is at least one of an amino acid reagent and an alcohol reagent.
5. The method of claim 4, wherein the amino acid reagent is at least one of glycine, aspartic acid, proline;
and/or the alcohol reagent is at least one of glycol, glycerol, diethanolamine and sorbitol.
6. The method according to any one of claims 3 to 5, wherein the pH adjuster adjusts the pH of the polishing liquid to 2 to 4;
and/or the mass concentration of the surfactant in the polishing solution is 0.3-1wt%;
and/or the mass concentration of the accelerator in the polishing solution is 0.5-2wt%.
7. The method according to any one of claims 1 to 6, wherein the abrasive has a particle size D 50 of 50 to 100nm;
and/or the viscosity of the polishing solution is 1-2 mpa.s;
and/or the Zeta potential of the polishing solution is 40-50mV.
8. The method of any one of claims 1-7, wherein the Ce 3+ ion concentration in the polishing solution is 10-30% of the total Ce ion concentration;
and/or the hardness of the hard polishing pad is 45-60HD;
and/or the polishing solution further comprises a dispersing agent.
9. The method of claim 8, wherein the dispersant is at least one of polystyrene, polyethylene glycol, AMP-95;
And/or the mass concentration of the dispersing agent in the polishing solution is 0.3-0.5wt%.
10. The method according to any one of claims 1 to 9, wherein the rotation speed of the polishing disc in the polishing process is 110 to 120rpm/min;
and/or the rotation speed of the polishing head in the polishing treatment is 104-114rpm/min;
And/or the polishing process has a center pressure of 6-8psi;
And/or the edge pressure of the polishing treatment is 1-3psi;
and/or, the polishing process has a retainer ring pressure of 9-11psi;
And/or the flow rate of the polishing solution for the polishing treatment is 40-70mL/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410275716.6A CN117921449A (en) | 2024-03-11 | 2024-03-11 | Chemical mechanical planarization method for silicon carbide substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410275716.6A CN117921449A (en) | 2024-03-11 | 2024-03-11 | Chemical mechanical planarization method for silicon carbide substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117921449A true CN117921449A (en) | 2024-04-26 |
Family
ID=90764613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410275716.6A Pending CN117921449A (en) | 2024-03-11 | 2024-03-11 | Chemical mechanical planarization method for silicon carbide substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117921449A (en) |
-
2024
- 2024-03-11 CN CN202410275716.6A patent/CN117921449A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4372173B2 (en) | Chemical mechanical polishing method and semiconductor device manufacturing method | |
| WO2009111001A2 (en) | Silicon carbide polishing method utilizing water-soluble oxidizers | |
| WO2008030420A1 (en) | Silicon carbide polishing method utilizing water-soluble oxidizers | |
| JP2002038131A (en) | Abrasive composition, method for producing abrasive composition and polishing method | |
| EP1234009A1 (en) | Composition and method for planarizing surfaces | |
| CN109104866B (en) | Polishing agent for synthetic quartz glass substrate and method for polishing synthetic quartz glass substrate | |
| CN114231182A (en) | Easy-to-cleave gallium oxide wafer chemical mechanical polishing process, polishing solution and preparation method thereof | |
| US7947195B2 (en) | Polishing slurry | |
| CN113502128B (en) | In-situ formed micro-nano bubble polishing solution, preparation method and application thereof | |
| CN112809458B (en) | Silicon carbide wafer and method for processing same | |
| CN101955732B (en) | A kind of chemical mechanical polishing liquid | |
| CN117921449A (en) | Chemical mechanical planarization method for silicon carbide substrate | |
| CN112521864A (en) | Chemical mechanical polishing solution for semiconductor silicon carbide chip | |
| CN112004906B (en) | Polishing agent for synthetic quartz glass substrate, method for producing same, and method for polishing synthetic quartz glass substrate | |
| CN108250976A (en) | A kind of chemical mechanical polishing liquid | |
| CN113881347B (en) | Chemical mechanical precision polishing liquid for silicon wafers | |
| CN108821324A (en) | A kind of nano-cerium oxide and its preparation method and application | |
| Nair et al. | Chemical mechanical planarization of germanium using oxone® based silica slurries | |
| CN110546233A (en) | Polishing agent for synthetic quartz glass substrate, method for producing same, and method for polishing synthetic quartz glass substrate | |
| CN117304814B (en) | Polycrystalline silicon carbide substrate polishing agent, polishing method and polycrystalline silicon carbide substrate | |
| JP2002326812A (en) | Crystalline cerium oxide (iv) sol and its production method | |
| CN114672252B (en) | Odorless aluminum nitride polishing solution and preparation method and application thereof | |
| JP4283088B2 (en) | Workpiece surface processing method | |
| CN113122146B (en) | Chemical mechanical polishing solution and application method thereof | |
| JPH10135163A (en) | Compd. for polishing metal film on semiconductor substrate and method of palnarizing the metal film on semiconductor substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination |