CN114672252B - Odorless aluminum nitride polishing solution and preparation method and application thereof - Google Patents
Odorless aluminum nitride polishing solution and preparation method and application thereof Download PDFInfo
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- 238000005498 polishing Methods 0.000 title claims abstract description 94
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 63
- 230000009965 odorless effect Effects 0.000 title claims abstract description 15
- 238000002360 preparation method Methods 0.000 title abstract description 9
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000002245 particle Substances 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000007800 oxidant agent Substances 0.000 claims abstract description 9
- 239000003381 stabilizer Substances 0.000 claims abstract description 9
- 230000001590 oxidative effect Effects 0.000 claims abstract description 7
- 239000008367 deionised water Substances 0.000 claims abstract description 6
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 6
- 239000002994 raw material Substances 0.000 claims abstract description 3
- 239000007788 liquid Substances 0.000 claims description 16
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 12
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 11
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
- 238000003756 stirring Methods 0.000 claims description 8
- -1 amine sulfonate Chemical class 0.000 claims description 7
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 claims description 4
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052580 B4C Inorganic materials 0.000 claims description 2
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910019142 PO4 Inorganic materials 0.000 claims description 2
- 239000000654 additive Substances 0.000 claims description 2
- 230000000996 additive effect Effects 0.000 claims description 2
- 150000001413 amino acids Chemical class 0.000 claims description 2
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 2
- 230000003139 buffering effect Effects 0.000 claims description 2
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 239000000395 magnesium oxide Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
- 239000010452 phosphate Substances 0.000 claims description 2
- 150000007519 polyprotic acids Polymers 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- DHCDFWKWKRSZHF-UHFFFAOYSA-N sulfurothioic S-acid Chemical compound OS(O)(=O)=S DHCDFWKWKRSZHF-UHFFFAOYSA-N 0.000 claims description 2
- 238000005303 weighing Methods 0.000 claims description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 238000005520 cutting process Methods 0.000 abstract description 16
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 abstract description 3
- 229910001385 heavy metal Inorganic materials 0.000 abstract description 2
- 230000009967 tasteless effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 22
- 230000000052 comparative effect Effects 0.000 description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 11
- 229910010271 silicon carbide Inorganic materials 0.000 description 11
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 4
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 4
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 2
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- 206010013911 Dysgeusia Diseases 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
Abstract
The application discloses a tasteless aluminum nitride polishing solution, which consists of the following raw materials in mass concentration: 0.1 to 40 percent of abrasive particles, 0.5 to 5 percent of alcohol ether, 0.5 to 20 percent of oxidant, 0.2 to 5 percent of pH stabilizer and the balance of deionized water; and the pH value of the aluminum nitride polishing solution is 2.5-4.5. The aluminum nitride polishing solution has the advantages of high cutting rate, stable surface quality and long cycle service life, has no problems of volatility and heavy metal pollution, and is easy to store for a long time; the polishing method is particularly suitable for polishing the surface of aluminum nitride of an ultra-precise optical device or a semiconductor power device. The application also discloses a preparation method and application of the odorless aluminum nitride polishing solution.
Description
Technical Field
The application relates to the technical field of aluminum nitride surface polishing, in particular to odorless aluminum nitride polishing solution, and a preparation method and application thereof.
Background
With the rapid growth of the semiconductor industry, electronic device dimensions shrink, requiring silicon, aluminum nitride, and other semiconductor wafers to have surface flatness on the order of nanometers. While conventional planarization techniques can only achieve local planarization, chemical Mechanical Polishing (CMP) can achieve global planarization, but also is superior to conventional planarization techniques in terms of both processing performance and speed.
The chemical mechanical polishing technology is to use chemical corrosion and mechanical force to carry out surface smoothing treatment on a silicon wafer or other substrate materials in the processing process; in the chemical etching process, chemical substances in the polishing solution react with the surface of the substrate to generate substances which are easy to remove, and the substances generated in the chemical reaction process are removed by mechanical force.
Aluminum nitride has high mechanical strength and good heat dissipation, but is easy to hydrolyze in the presence of water to generate pungent ammonia taste, and the taste is more difficult to bear in polishing solutions in the presence of strong oxidants.
Disclosure of Invention
In view of the shortcomings of the prior art, the application provides an odorless aluminum nitride polishing solution, which solves the problems of low efficiency, easy volatilization, difficult long-term storage, short cycle service life and heavy metal pollution of the existing aluminum nitride polishing solution, and improves the surface cutting rate and the surface quality of a wafer.
In order to achieve the above purpose, the application adopts the following technical scheme:
an odorless aluminum nitride polishing solution comprises the following raw materials in mass concentration: 0.1 to 40 percent of abrasive particles, 0.5 to 5 percent of alcohol ether, 0.5 to 20 percent of oxidant, 0.2 to 5 percent of pH stabilizer and the balance of deionized water; and the pH value of the aluminum nitride polishing solution is 2.5-4.5.
Preferably, the abrasive particles are one or more of silica, alumina, ceria, manganese oxide, magnesia, aluminum nitride, boron carbide, diamond.
Preferably, the alcohol ether is one or more of various lower alcohol ethers of ethylene glycol and propylene glycol. The alcohol ether adopted by the application is limited to glycol ether substances of glycol and propylene glycol, and compared with the glycol ether adopted by the application, the glycol ether improves the affinity of abrasive particles and a water solvent, and plays a role in suspending and dispersing the abrasive particles. Further, various lower alcohol ethers of ethylene glycol include, but are not limited to, ethylene glycol methyl ether, ethylene glycol ethyl ether, ethylene glycol butyl ether; various lower alcohol ethers of propylene glycol include, but are not limited to, propylene glycol methyl ether, propylene glycol ethyl ether. The alcohol ether further has a suspension dispersion function by limiting the alcohol ether to ether substances with carbon number below 4, and the long-chain ether substances with carbon number above 5 can cause the enhancement of the hydrophobicity of the alcohol ether and reduce the suspension dispersion function on the grinding particles.
Preferably, the oxidant is one or more of hydroxylamine, hydrogen peroxide, peracetic acid, thiosulfate and salts thereof.
Preferably, the pH stabilizer is an additive with buffering capacity, so that the pH of the aluminum nitride polishing solution is stabilized at 2.5-4.5.
Preferably, the pH stabilizer is one or more of amino acid, amine sulfonate, amine phosphate and polybasic acid.
Another aspect of the present application provides a method for preparing the odorless aluminum nitride polishing solution, which comprises the following steps: and (3) weighing abrasive particles with fixed content, uniformly dispersing the abrasive particles in alcohol ether and deionized water, uniformly stirring, adding an oxidant, uniformly stirring, and adopting a pH stabilizer to adjust the pH value to be 2.5-4.5 to obtain the aluminum nitride polishing solution.
A further aspect of the present application is the use of the odorless aluminum nitride polishing liquid as described above for surface polishing of aluminum nitride compounds. Is especially suitable for surface polishing of ultra-precise optical devices and semiconductor power devices.
The application has the beneficial effects that:
the aluminum nitride polishing solution solves the problems of strong volatility, strong taste caused by strong oxidant in the use process of the polishing solution, and the like of the silica sol polishing solution.
The aluminum nitride polishing solution has the advantages of high cutting rate, stable surface quality and long cycle service life, and is especially suitable for the surface polishing of ultra-precise optical devices or semiconductor power devices on the surfaces of silicon nitride and aluminum nitride which are nitrogen compounds difficult to process.
The aluminum nitride polishing solution disclosed by the application has no volatility problem, is easy to store for a long time, and is an ideal aluminum nitride polishing solution material with sub-nanometer finish degree for manufacturing semiconductor compound wafers.
Detailed Description
The following description is presented to enable one of ordinary skill in the art to make and use the application. The preferred embodiments in the following description are by way of example only and other obvious variations will occur to those skilled in the art.
Example 1
The preparation method of the aluminum nitride polishing solution comprises the following steps: taking 800g of water and 50g of ethylene glycol methyl ether, and uniformly stirring; then 100g of 1 μm alpha-alumina was added, 100g of potassium persulfate was added, and then 20g of succinic acid was added, and the pH was adjusted to 2.5 with sodium hydroxide to obtain the aluminum nitride polishing liquid.
The prepared aluminum nitride polishing solution is used for polishing 4' aluminum nitride wafers, the polishing pressure is set to be 5psi, the rotating speed of the lower disc of the polishing machine is 50RPM, the rotating speed of the upper disc is 50RPM reversely, and the polishing time is 60 minutes. The test results showed that the cutting efficiency of the SiC wafer was 5.31 μm/hr, and the pit had disappeared and was smooth.
The polishing solution was recycled and continuously polished for 5 60 minutes, the cutting efficiency of sic wafers was 6.33 μm/hr, ph=2.57, respectively; 6.37 μm/hr, ph=2.62; 6.34 μm/hr, ph=2.80; 6.29 μm/hr, ph=2.98; and 6.27 μm/hr, ph=3.21; the surface has no pit and is smooth. The polishing liquid ammonia gas is released, but the polishing process is odorless.
After the polishing liquid was stored for 30 days, the test was conducted again under the same conditions, and the test result showed that the cutting efficiency of the SiC wafer was 6.29 μm/hr, and that the surface pits disappeared and were smoothed.
Example 2
The preparation method of the aluminum nitride polishing solution comprises the following steps: taking 800g of water and 20g of ethylene glycol methyl ether, and uniformly stirring; then 50g of 1 mu m alpha-alumina is added, 200g of hydrogen peroxide is added, 10g of glycine is added, and the pH value is adjusted to 2.5 by nitric acid, so that the aluminum nitride polishing solution is obtained.
The prepared aluminum nitride polishing solution is used for polishing 4' aluminum nitride wafers, the polishing pressure is set to be 5psi, the rotating speed of the lower disc of the polishing machine is 50RPM, the rotating speed of the upper disc is 50RPM reversely, and the polishing time is 60 minutes. The test results showed that the cutting efficiency of the SiC wafer was 7.22 μm/hr, and the pit had disappeared and was smooth.
Example 3
The preparation method of the aluminum nitride polishing solution comprises the following steps: taking 850g of water and 10g of propylene glycol methyl ether, and uniformly stirring; then 80g of 1 mu m silicon carbide is added, 100g of hydrogen peroxide is added, 15g of lactic acid is added, and the pH value is adjusted to 2.5 by sodium hydroxide, so that the aluminum nitride polishing solution is obtained.
The prepared aluminum nitride polishing solution is used for polishing 4' aluminum nitride wafers, the polishing pressure is set to be 5psi, the rotating speed of the lower disc of the polishing machine is 50RPM, the rotating speed of the upper disc is 50RPM reversely, and the polishing time is 60 minutes. The test results showed that the cutting efficiency of the SiC wafer was 6.87 μm/hr, and the pit had disappeared and was smooth.
Example 4
The preparation method of the aluminum nitride polishing solution comprises the following steps: taking 750g of water and 30g of ethylene glycol methyl ether, and uniformly stirring; 150g of cerium oxide (1.3 μm) was then added, 300g of potassium persulfate was added, and 50g of phosphoric acid was further added, followed by pH to 2.5 with sodium hydroxide to obtain the aluminum nitride polishing liquid.
The prepared aluminum nitride polishing solution is used for polishing 4' aluminum nitride wafers, the polishing pressure is set to be 5psi, the rotating speed of the lower disc of the polishing machine is 50RPM, the rotating speed of the upper disc is 50RPM reversely, and the polishing time is 60 minutes. The test results showed that the cutting efficiency of the SiC wafer was 4.65 μm/hr, and the pit had disappeared and was smooth.
Comparative example 1
The preparation method of the aluminum nitride polishing solution of the comparative example comprises the following steps: 100g of deionized water is taken, 800g of 80nm silica sol is added, and the mixture is stirred uniformly, and the pH value is 8.7, thus obtaining the aluminum nitride polishing solution of the comparative example.
The prepared aluminum nitride polishing solution is used for polishing 4' aluminum nitride wafers, the polishing pressure is set to be 5psi, the rotating speed of the lower disc of the polishing machine is 50RPM, the rotating speed of the upper disc is 50RPM reversely, and the polishing time is 60 minutes. The test results showed that a large amount of ammonia gas was released during polishing, the taste was great, the cutting efficiency of the aluminum nitride wafer was 2.37 μm/hr, and the surface was dull.
Comparative example 2
The aluminum nitride polishing liquid of this comparative example was prepared in substantially the same manner as in comparative example 1, except that alumina was used as the abrasive, and the pH of the aluminum nitride polishing liquid of this comparative example was 2.3.
Under the same test conditions, the test results showed that the cutting efficiency of the SiC wafer was 3.57 μm/hr, with pits on the surface.
The polishing solution is recycled and polished for 5 60min continuously, the cutting efficiency of the SiC wafer is 3.50 mu m/hr, and the pH=4.3; 3.56 μm/hr, ph=6.7; 3.24 μm/hr, ph=9.1; 3.11 μm/hr, ph=10.3 and 3.02 μm/hr, ph=10.5, surface pits. The pH of the polishing solution rises rapidly along with the increase of the polishing time, and the polishing solution releases ammonia gas and has bad taste.
After the polishing liquid was stored for 30 days, a polishing test was conducted again under the same conditions for 1 hour, and the test result showed that the cutting efficiency of the SiC wafer was 3.38 μm/hr and that the surface had pits.
Comparative example 3
The aluminum nitride polishing liquid of this comparative example was prepared in substantially the same manner as in comparative example 1, except that alumina was used as the abrasive, and the pH of the aluminum nitride polishing liquid of this comparative example was 9.5.
Under the same test conditions, the test results showed that a large amount of ammonia gas was released during polishing, the taste was large, the cutting efficiency of the SiC wafer was 3.81 μm/hr, and the surface was dull.
The polishing solution was recycled and continuously polished for 5 60 minutes, the cutting efficiency of sic wafers was 3.71 μm/hr, ph=9.97, respectively; 3.73 μm/hr, ph=10.31; 3.74 μm/hr, ph=10.52; ph=10.55 and 3.73 μm/hr, ph=10.57. A large amount of ammonia gas is released in the polishing process, the taste is great, pits are formed, and the surface is dull and dull.
After the polishing liquid was stored for 30 days, the test was conducted again under the same conditions, and the test result showed that the cutting efficiency of the SiC wafer was 3.57 μm/hr, with pits on the surface.
The foregoing has shown and described the basic principles, principal features and advantages of the application. It will be understood by those skilled in the art that the present application is not limited to the embodiments described above, and that the above embodiments and descriptions are merely illustrative of the principles of the present application, and various changes and modifications may be made therein without departing from the spirit and scope of the application, which is defined by the appended claims.
Claims (6)
1. The odorless aluminum nitride polishing solution is characterized by comprising the following raw materials in mass concentration: 0.1 to 40 percent of abrasive particles, 0.5 to 5 percent of alcohol ether, 0.5 to 20 percent of oxidant, 0.2 to 5 percent of pH stabilizer and the balance of deionized water; the pH value of the aluminum nitride polishing solution is 2.5-4.5; the abrasive particles are one or more of silicon oxide, aluminum oxide, cerium oxide, manganese oxide, magnesium oxide, aluminum nitride, boron carbide and diamond; the alcohol ether is one or more of various low-carbon alcohol ethers of ethylene glycol and propylene glycol.
2. The odorless aluminum nitride polishing solution according to claim 1, wherein the oxidizing agent is one or more of hydroxylamine, hydrogen peroxide, peracetic acid, thiosulfate, and salts thereof.
3. The odorless aluminum nitride polishing liquid of claim 1, wherein the pH stabilizer is an additive having a buffering capacity so that the aluminum nitride polishing liquid stabilizes the pH at 2.5 to 4.5.
4. The odorless aluminum nitride polishing liquid according to claim 1, wherein the pH stabilizer is one or more of amino acid, amine sulfonate, amine phosphate, and polybasic acid.
5. A method for producing an odorless aluminum nitride polishing liquid as claimed in any one of claims 1 to 4, characterized in that the method comprises the steps of: and (3) weighing abrasive particles with fixed content, uniformly dispersing the abrasive particles in alcohol ether and deionized water, uniformly stirring, adding an oxidant, uniformly stirring, and adopting a pH stabilizer to adjust the pH value to be 2.5-4.5 to obtain the aluminum nitride polishing solution.
6. Use of the odorless aluminum nitride polishing liquid according to any one of claims 1 to 4, wherein the aluminum nitride polishing liquid is used for surface polishing of aluminum nitride compounds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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